JPH11168174A - 半導体装置のキャパシタ形成方法 - Google Patents
半導体装置のキャパシタ形成方法Info
- Publication number
- JPH11168174A JPH11168174A JP10248787A JP24878798A JPH11168174A JP H11168174 A JPH11168174 A JP H11168174A JP 10248787 A JP10248787 A JP 10248787A JP 24878798 A JP24878798 A JP 24878798A JP H11168174 A JPH11168174 A JP H11168174A
- Authority
- JP
- Japan
- Prior art keywords
- film
- lower electrode
- capacitor
- semiconductor device
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 239000003990 capacitor Substances 0.000 title claims description 26
- 230000015572 biosynthetic process Effects 0.000 title abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000003980 solgel method Methods 0.000 claims abstract description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 6
- 229910052788 barium Inorganic materials 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 230000010287 polarization Effects 0.000 abstract description 18
- 239000000356 contaminant Substances 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000010936 titanium Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1997P46187 | 1997-09-08 | ||
| KR1019970046187A KR100243298B1 (ko) | 1997-09-08 | 1997-09-08 | 반도체장치의 커패시터 형성방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH11168174A true JPH11168174A (ja) | 1999-06-22 |
Family
ID=19520990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10248787A Pending JPH11168174A (ja) | 1997-09-08 | 1998-09-02 | 半導体装置のキャパシタ形成方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6146935A (ko) |
| JP (1) | JPH11168174A (ko) |
| KR (1) | KR100243298B1 (ko) |
| TW (1) | TW389980B (ko) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1128418A2 (de) * | 2000-02-25 | 2001-08-29 | Infineon Technologies AG | Verfahren zur Herstellung einer ferroelektrischen Kondensatoranordnung |
| JP2005032981A (ja) * | 2003-07-14 | 2005-02-03 | Shinko Electric Ind Co Ltd | キャパシタ装置及びその製造方法 |
| US7297999B1 (en) | 2006-06-29 | 2007-11-20 | Fujitsu Limited | Semiconductor device with capacitors and its manufacture method |
| JP2015193523A (ja) * | 2014-03-25 | 2015-11-05 | 三菱マテリアル株式会社 | ＬａＮｉＯ３薄膜の形成方法 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6376090B1 (en) * | 1998-09-25 | 2002-04-23 | Sharp Kabushiki Kaisha | Method for manufacturing a substrate with an oxide ferroelectric thin film formed thereon and a substrate with an oxide ferroelectric thin film formed thereon |
| JP4601896B2 (ja) | 2002-10-30 | 2010-12-22 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
| US7262135B2 (en) * | 2005-09-01 | 2007-08-28 | Micron Technology, Inc. | Methods of forming layers |
| WO2008094211A2 (en) * | 2006-08-07 | 2008-08-07 | The Trustees Of The University Of Pennsylvania | Tunable ferroelectric supported catalysts and method and uses thereof |
| US7489553B2 (en) * | 2007-06-07 | 2009-02-10 | Sandisk Corporation | Non-volatile memory with improved sensing having bit-line lockout control |
| KR20190016659A (ko) | 2017-08-09 | 2019-02-19 | 이애정 | 음향판 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5168420A (en) * | 1990-11-20 | 1992-12-01 | Bell Communications Research, Inc. | Ferroelectrics epitaxially grown on superconducting substrates |
| US5648114A (en) * | 1991-12-13 | 1997-07-15 | Symetrix Corporation | Chemical vapor deposition process for fabricating layered superlattice materials |
| US5270298A (en) * | 1992-03-05 | 1993-12-14 | Bell Communications Research, Inc. | Cubic metal oxide thin film epitaxially grown on silicon |
| US5155658A (en) * | 1992-03-05 | 1992-10-13 | Bell Communications Research, Inc. | Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films |
| US5426075A (en) * | 1994-06-15 | 1995-06-20 | Ramtron International Corporation | Method of manufacturing ferroelectric bismuth layered oxides |
| JP3476932B2 (ja) * | 1994-12-06 | 2003-12-10 | シャープ株式会社 | 強誘電体薄膜及び強誘電体薄膜被覆基板並びに強誘電体薄膜の製造方法 |
| JPH09139480A (ja) * | 1995-01-27 | 1997-05-27 | Toshiba Corp | 薄膜キャパシタおよびこれを用いた半導体記憶装置 |
| US6066581A (en) * | 1995-07-27 | 2000-05-23 | Nortel Networks Corporation | Sol-gel precursor and method for formation of ferroelectric materials for integrated circuits |
| JP2999703B2 (ja) * | 1995-12-20 | 2000-01-17 | 沖電気工業株式会社 | 強誘電体薄膜、その形成方法、薄膜形成用塗布液 |
| US5990507A (en) * | 1996-07-09 | 1999-11-23 | Kabushiki Kaisha Toshiba | Semiconductor device having ferroelectric capacitor structures |
| US6051858A (en) * | 1996-07-26 | 2000-04-18 | Symetrix Corporation | Ferroelectric/high dielectric constant integrated circuit and method of fabricating same |
-
1997
- 1997-09-08 KR KR1019970046187A patent/KR100243298B1/ko not_active IP Right Cessation
-
1998
- 1998-04-24 TW TW087106358A patent/TW389980B/zh not_active IP Right Cessation
- 1998-09-02 JP JP10248787A patent/JPH11168174A/ja active Pending
- 1998-09-04 US US09/148,172 patent/US6146935A/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1128418A2 (de) * | 2000-02-25 | 2001-08-29 | Infineon Technologies AG | Verfahren zur Herstellung einer ferroelektrischen Kondensatoranordnung |
| EP1128418A3 (de) * | 2000-02-25 | 2004-04-07 | Infineon Technologies AG | Verfahren zur Herstellung einer ferroelektrischen Kondensatoranordnung |
| US6852240B2 (en) | 2000-02-25 | 2005-02-08 | Infineon Technologies Ag | Method of manufacturing a ferroelectric capacitor configuration |
| JP2005032981A (ja) * | 2003-07-14 | 2005-02-03 | Shinko Electric Ind Co Ltd | キャパシタ装置及びその製造方法 |
| JP4647194B2 (ja) * | 2003-07-14 | 2011-03-09 | 新光電気工業株式会社 | キャパシタ装置及びその製造方法 |
| US7297999B1 (en) | 2006-06-29 | 2007-11-20 | Fujitsu Limited | Semiconductor device with capacitors and its manufacture method |
| US7405121B2 (en) | 2006-06-29 | 2008-07-29 | Fujitsu Limited | Semiconductor device with capacitors and its manufacture method |
| JP2015193523A (ja) * | 2014-03-25 | 2015-11-05 | 三菱マテリアル株式会社 | ＬａＮｉＯ３薄膜の形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100243298B1 (ko) | 2000-02-01 |
| TW389980B (en) | 2000-05-11 |
| KR19990024821A (ko) | 1999-04-06 |
| US6146935A (en) | 2000-11-14 |
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Legal Events
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