JPH1116394A - サブスレッショルド漏れ電流が最悪の条件に設定され得る、メモリのリフレッシュ動作を検査する方法 - Google Patents
サブスレッショルド漏れ電流が最悪の条件に設定され得る、メモリのリフレッシュ動作を検査する方法Info
- Publication number
- JPH1116394A JPH1116394A JP10153922A JP15392298A JPH1116394A JP H1116394 A JPH1116394 A JP H1116394A JP 10153922 A JP10153922 A JP 10153922A JP 15392298 A JP15392298 A JP 15392298A JP H1116394 A JPH1116394 A JP H1116394A
- Authority
- JP
- Japan
- Prior art keywords
- memory cell
- memory
- value
- cell
- storing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015654 memory Effects 0.000 title claims abstract description 215
- 238000000034 method Methods 0.000 title claims abstract description 51
- 238000012360 testing method Methods 0.000 title claims description 35
- 210000004027 cell Anatomy 0.000 claims description 213
- 238000010998 test method Methods 0.000 claims description 3
- 210000000352 storage cell Anatomy 0.000 claims 2
- 230000004044 response Effects 0.000 claims 1
- 230000002950 deficient Effects 0.000 abstract 1
- 238000007689 inspection Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 210000001744 T-lymphocyte Anatomy 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US858,271 | 1997-05-19 | ||
| US08/858,271 US5903505A (en) | 1997-05-19 | 1997-05-19 | Method of testing memory refresh operations wherein subthreshold leakage current may be set to near worst-case conditions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1116394A true JPH1116394A (ja) | 1999-01-22 |
| JPH1116394A5 JPH1116394A5 (enExample) | 2005-10-06 |
Family
ID=25327924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10153922A Pending JPH1116394A (ja) | 1997-05-19 | 1998-05-19 | サブスレッショルド漏れ電流が最悪の条件に設定され得る、メモリのリフレッシュ動作を検査する方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US5903505A (enExample) |
| JP (1) | JPH1116394A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10199293A (ja) * | 1996-12-27 | 1998-07-31 | Canon Inc | メモリのデータ保持特性の試験方法 |
| US6167544A (en) * | 1998-08-19 | 2000-12-26 | Stmicroelectronics, Inc. | Method and apparatus for testing dynamic random access memory |
| KR100548541B1 (ko) * | 1999-06-30 | 2006-02-02 | 주식회사 하이닉스반도체 | 반도체 소자의 리프레쉬 특성을 측정하기 위한 테스트 장치 및방법 |
| DE10004958A1 (de) * | 2000-02-04 | 2001-08-09 | Infineon Technologies Ag | Verfahren zum Testen der Refresheinrichtung eines Informationsspeichers |
| JP2002133876A (ja) * | 2000-10-23 | 2002-05-10 | Hitachi Ltd | 半導体記憶装置 |
| US6728156B2 (en) * | 2002-03-11 | 2004-04-27 | International Business Machines Corporation | Memory array system |
| US6947348B2 (en) * | 2003-07-15 | 2005-09-20 | International Business Machines Corporation | Gain cell memory having read cycle interlock |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5149641A (en) * | 1974-10-26 | 1976-04-30 | Nippon Electric Co | Kiokusochino shikenhoho |
| JPS51139221A (en) * | 1975-05-28 | 1976-12-01 | Hitachi Ltd | Method of and apparatus for measuring reflesh period of mis dynamic ty pe memory |
| JPS57127992A (en) * | 1981-01-28 | 1982-08-09 | Nec Corp | Test method for memory |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2606669B2 (ja) * | 1994-09-22 | 1997-05-07 | 日本電気株式会社 | 半導体記憶装置 |
-
1997
- 1997-05-19 US US08/858,271 patent/US5903505A/en not_active Expired - Lifetime
-
1998
- 1998-05-19 JP JP10153922A patent/JPH1116394A/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5149641A (en) * | 1974-10-26 | 1976-04-30 | Nippon Electric Co | Kiokusochino shikenhoho |
| JPS51139221A (en) * | 1975-05-28 | 1976-12-01 | Hitachi Ltd | Method of and apparatus for measuring reflesh period of mis dynamic ty pe memory |
| JPS57127992A (en) * | 1981-01-28 | 1982-08-09 | Nec Corp | Test method for memory |
Also Published As
| Publication number | Publication date |
|---|---|
| US5903505A (en) | 1999-05-11 |
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