JPH11156684A - Mirror finishing device for semiconductor wafer - Google Patents

Mirror finishing device for semiconductor wafer

Info

Publication number
JPH11156684A
JPH11156684A JP9327672A JP32767297A JPH11156684A JP H11156684 A JPH11156684 A JP H11156684A JP 9327672 A JP9327672 A JP 9327672A JP 32767297 A JP32767297 A JP 32767297A JP H11156684 A JPH11156684 A JP H11156684A
Authority
JP
Japan
Prior art keywords
chuck
wafer
driving means
polishing drum
drum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9327672A
Other languages
Japanese (ja)
Inventor
Junichi Yamazaki
順一 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KOMATSU KOKI KK
Original Assignee
KOMATSU KOKI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KOMATSU KOKI KK filed Critical KOMATSU KOKI KK
Priority to JP9327672A priority Critical patent/JPH11156684A/en
Priority to KR1019980051599A priority patent/KR19990045683A/en
Publication of JPH11156684A publication Critical patent/JPH11156684A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B9/00Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
    • B24B9/02Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
    • B24B9/06Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
    • B24B9/065Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00Component parts such as frames, beds, carriages, headstocks
    • B24B41/06Work supports, e.g. adjustable steadies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

PROBLEM TO BE SOLVED: To achieve accurate mirror finish by oscillating a wafer in the axial line direction of a polishing drum. SOLUTION: A device is constituted of a polishing drum driving means 2 consisting of a polishing drum 6 and a drum driving source 7 for rotating and driving this polishing drum 6, at least one wafer driving means 3 placed near the grinding drum driving means 2, a chuck driving means 15 which is provided for the wafer driving means 3 and can oscillate in the axial line direction of the polishing drum 6 with an oscillation means 8, a chuck 17 which is provided for the chuck driving means 15 and holds a wafer 20 for a chamfered part 20a on the outer peripheral surface of the polishing drum 6, and a chuck driving source 16 for rotating and driving the chuck 17, and enables the highly accurate mirror finish of the chamfer.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は周縁部を面取り加
工された半導体ウエハを鏡面加工する鏡面加工装置に関
する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mirror processing apparatus for mirror-processing a semiconductor wafer having a peripheral portion chamfered.

【0002】[0002]

【従来の技術】従来集積回路などに使用する半導体ウエ
ハは、シリコン単結晶よりなるインゴットを薄くスライ
スすることにより製作されているが、最近では、エッジ
部にピッチングが発生するのを防止するため、エッジ部
を面取り加工したり、パーテイクルの防止と強度アップ
を図るため、周縁部を鏡面加工している。
2. Description of the Related Art Conventionally, semiconductor wafers used for integrated circuits and the like have been manufactured by thinly slicing an ingot made of silicon single crystal, but recently, in order to prevent occurrence of pitching at an edge portion, The edge is mirror-polished to prevent chamfering of the edge and to prevent particles and increase strength.

【0003】また半導体ウエハの面取り部を鏡面加工す
る方法としては、例えば特公平7−61601号公報に
記載されたものが公知である。
As a method for mirror-finishing a chamfered portion of a semiconductor wafer, for example, a method described in Japanese Patent Publication No. 7-61601 is known.

【0004】上記公報の鏡面加工方法は、外周部を面取
り加工された円板形のウエハをチャックテーブルに保持
させる工程、上記ウエハを該ウエハの軸線の回りに回転
させる工程、直線的な移動により接離自在なるように支
持された研摩ドラムとウエハとを、鉛直に吊り下げられ
たウエイトの付勢力で当接させ、回転する研摩ドラムで
ウエハの面取り部を研摩する工程、上記研摩ドラムを該
研摩ドラムの軸線方向に移動させることによりウエハと
の当接位置を変える工程を有することを特徴としたもの
で、面取り部全面を確実かつ均一に鏡面研摩することが
可能となるなどの効果を有している。
In the mirror polishing method disclosed in the above publication, a step of holding a disc-shaped wafer having a chamfered outer peripheral portion on a chuck table, a step of rotating the wafer around an axis of the wafer, and a linear movement A step of bringing the polishing drum, which is supported so as to be able to freely contact and separate, and the wafer into contact with the urging force of a vertically suspended weight, and polishing the chamfered portion of the wafer with the rotating polishing drum; It has a step of changing the contact position with the wafer by moving the polishing drum in the axial direction, and has the effect of enabling the entire surface of the chamfer to be reliably and uniformly mirror-polished. doing.

【0005】[0005]

【発明が解決しようとする課題】しかし上記公報の鏡面
加工方法では、複数のウエハを同一の研摩ドラムに当接
して鏡面加工する場合、各ウエハ毎にオシレート条件が
設定できないため、最適な研摩条件で各ウエハを鏡面加
工することができないなどの不具合があった。
However, in the mirror polishing method disclosed in the above publication, when a plurality of wafers are brought into contact with the same polishing drum to perform mirror polishing, the oscillating condition cannot be set for each wafer. Therefore, there is a problem that each wafer cannot be mirror-finished.

【0006】この発明はかかる従来の不具合を改善する
ためになされたもので、各ウエハ毎に最適な研摩条件で
鏡面加工が可能な半導体ウエハの鏡面加工装置を提供す
ることを目的とするものである。
SUMMARY OF THE INVENTION The present invention has been made to solve such a conventional problem, and an object of the present invention is to provide a mirror polishing apparatus for a semiconductor wafer capable of mirror polishing under optimum polishing conditions for each wafer. is there.

【0007】[0007]

【課題を解決するための手段及び作用効果】上記目的を
達成するため請求項1記載の発明は、研摩ドラム及びこ
の研摩ドラムを回転駆動するドラム駆動源よりなる研摩
ドラム駆動手段と、上記研摩ドラム駆動手段の近傍に設
置された少なくとも1基のウエハ駆動手段と、上記ウエ
ハ駆動手段に設けられ、かつオシレート手段により上記
研摩ドラムの軸線方向にオシレート自在なチャック駆動
手段と、上記チャック駆動手段に設けられ、かつ上記研
摩ドラムの外周面で面取り部を鏡面加工するウエハを保
持するチャックと、上記チャックを回転駆動するチャッ
ク駆動源とより構成したものである。
In order to achieve the above object, the invention according to claim 1 is a polishing drum driving means comprising a polishing drum and a drum driving source for rotating the polishing drum, and the polishing drum. At least one wafer driving means provided in the vicinity of the driving means, a chuck driving means provided on the wafer driving means, and capable of oscillating in the axial direction of the polishing drum by an oscillating means; and being provided on the chuck driving means. And a chuck for holding a wafer whose chamfered portion is mirror-finished on the outer peripheral surface of the polishing drum, and a chuck drive source for rotating the chuck.

【0008】上記構成により、ウエハを研摩ドラムの軸
線方向へオシレートさせながら、研摩ドラムの外周面で
ウエハの面取り部が鏡面加工されるため、面取り部に発
生した微小な凹凸を確実に除去することができると共
に、面取り部の鏡面加工が短時間で能率よく行える。
With the above structure, the chamfered portion of the wafer is mirror-finished on the outer peripheral surface of the polishing drum while the wafer is oscillated in the axial direction of the polishing drum, so that minute irregularities generated in the chamfered portion can be reliably removed. And the mirror finishing of the chamfered portion can be performed efficiently in a short time.

【0009】またウエハを研摩ドラムの軸線方向へオシ
レートさせることにより、面取り部と研摩ドラムの当接
位置が絶えずずれるため、研摩ドラムのクロスが局部的
に摩耗することがなく、これによってクロスの寿命が向
上するため経済的であると同時に、クロスの交換頻度が
低減できるため、保守管理も容易になる。
In addition, by oscillating the wafer in the axial direction of the polishing drum, the contact position between the chamfered portion and the polishing drum is constantly shifted, so that the cloth of the polishing drum is not locally worn, thereby reducing the life of the cloth. In addition, the cost of replacing the cloth can be reduced, and the maintenance management becomes easy.

【0010】上記目的を達成するため請求項2記載の発
明は、チャック駆動手段を研摩ドラム方向へ付勢する付
勢手段と、研摩ドラムより離間する方向へ退避させる退
避手段を設けたものである。
According to a second aspect of the present invention, there is provided an urging means for urging the chuck driving means toward the polishing drum, and a retracting means for retracting the chuck driving means in a direction away from the polishing drum. .

【0011】上記構成により、ウエハの面取り部を常に
一定の面圧で研摩ドラムの外周面に当接させることがで
きるため、安定した鏡面加工が可能になると共に、面取
り部の加工精度も向上する。
According to the above configuration, the chamfered portion of the wafer can always be brought into contact with the outer peripheral surface of the polishing drum with a constant surface pressure, so that a stable mirror finish can be performed and the processing accuracy of the chamfered portion can be improved. .

【0012】上記目的を達成するため請求項3記載の発
明は、チャック駆動手段に設けられたチャックの回転中
心を、任意な角度に傾斜させる角度可変手段を設けたも
のである。
In order to achieve the above object, the invention according to claim 3 is provided with angle varying means for inclining the rotation center of the chuck provided in the chuck driving means at an arbitrary angle.

【0013】上記構成により、面取り部の面取り角度に
応じてチャックの回転中心を傾斜させることができるた
め、面取り角度の異なるウエハ全般に適用できると共
に、チャックの回転中心を研摩ドラムの回転中心と平行
にすることにより、ウエハ外周面の鏡面加工も可能にな
る。
With the above configuration, the center of rotation of the chuck can be inclined according to the chamfer angle of the chamfered portion, so that the present invention can be applied to all wafers having different chamfer angles, and the center of rotation of the chuck is parallel to the center of rotation of the polishing drum. By doing so, it becomes possible to mirror-process the outer peripheral surface of the wafer.

【0014】上記目的を達成するため請求項4記載の発
明は、研摩ドラム駆動手段の近傍に、複数基のウエハ駆
動手段を設置したものである。
According to a fourth aspect of the present invention, a plurality of wafer driving means are provided near the polishing drum driving means.

【0015】上記構成により、各ウエハ駆動手段のオシ
レート手段を別個に制御することにより、鏡面加工する
ウエハの各面の研摩条件に合せた最適な研摩条件で面取
り部の鏡面加工が可能になる。
According to the above configuration, by separately controlling the oscillating means of each wafer driving means, it becomes possible to mirror-process the chamfered portion under optimum polishing conditions in accordance with the polishing conditions of each surface of the wafer to be mirror-polished.

【0016】[0016]

【発明の実施の形態】この発明の実施の形態を図面を参
照して詳述する。図1は鏡面加工装置の正面図、図2は
同平面図、図3は図1のA方向からの矢視図、図4は図
1のB−B線に沿う断面図である。
Embodiments of the present invention will be described in detail with reference to the drawings. 1 is a front view of the mirror finishing apparatus, FIG. 2 is a plan view of the same, FIG. 3 is a view taken in the direction of arrow A in FIG. 1, and FIG.

【0017】これら図において1は装置本体で、研摩ド
ラム駆動手段2とその近傍に設置された1基ないし複数
基のウエハ駆動手段3よりなる。上記研摩ドラム駆動手
段2は、架台1a上に筒上のドラム収容室4を有してい
て、このドラム収容室4の中心部に、垂直方向に回転軸
5が支承されており、回転軸5の上端には、ドラム収容
室4内に収容された研摩ドラム6が着脱自在に取付けら
れている。
In these figures, reference numeral 1 denotes an apparatus main body, which comprises a polishing drum driving means 2 and one or a plurality of wafer driving means 3 installed in the vicinity thereof. The polishing drum driving means 2 has a cylindrical drum housing chamber 4 on a gantry 1a, and a rotary shaft 5 is supported in the center of the drum housing chamber 4 in a vertical direction. A polishing drum 6 housed in a drum housing chamber 4 is detachably attached to the upper end of the drum.

【0018】上記研摩ドラム6は円筒状のドラム本体6
aの外周面にクロス6bが巻付けられていて、このクロ
ス6bの表面で後述するウエハ20の面取り部20aを
鏡面加工するようになっている。上記回転軸5の下端
は、架台1a側に固定されたモータなどのドラム駆動源
7に接続されていて、このドラム駆動源7により回転軸
5を介して上記研摩ドラム6が回転されるようになって
いる。
The polishing drum 6 has a cylindrical drum body 6.
A cloth 6b is wound around the outer peripheral surface of the wafer 20a, and a chamfered portion 20a of the wafer 20 described later is mirror-finished on the surface of the cloth 6b. The lower end of the rotary shaft 5 is connected to a drum drive source 7 such as a motor fixed to the gantry 1 a side, and the polishing drum 6 is rotated by the drum drive source 7 via the rotary shaft 5. Has become.

【0019】一方上記ウエハ駆動手段3は、周囲がカバ
ー3bにより覆われた箱状の筐体3aを有していて、こ
の筐体3aの上部に、オシレート手段8により上下方向
へオシレート自在な昇降テーブル10が設けられてい
る。上記昇降テーブル10の下面には、垂直方向に支持
部材10aが突設されていて、この支持部材10aに固
着された支持部8aが、筐体3a内に垂直に固定された
一対のLMガイド8bに上下摺動自在に支承されてい
る。
On the other hand, the wafer driving means 3 has a box-shaped casing 3a whose periphery is covered by a cover 3b, and is vertically movable by an oscillating means 8 on the top of the casing 3a. A table 10 is provided. A vertical support member 10a is provided on the lower surface of the elevating table 10, and a support portion 8a fixed to the support member 10a is provided with a pair of LM guides 8b fixed vertically in the housing 3a. It is supported slidably up and down.

【0020】上記支持部材10aの近傍には、上記LM
ガイド8bと平行するようボールねじ8cが回転自在に
支承されていて、このボールねじ8cに支持部材10a
に固着されたボールナット8dが螺合されていると共
に、ボールねじ8cの下端はギヤ8eを介してモータよ
りなるオシレート駆動源9に接続されていて、このオシ
レート駆動源9によりボールねじ8cを正逆回転させる
ことにより、ガイド杆8bに沿って昇降テーブル10が
昇降できるようになっている。
In the vicinity of the support member 10a, the LM
A ball screw 8c is rotatably supported so as to be parallel to the guide 8b.
The ball screw 8c is screwed together, and the lower end of the ball screw 8c is connected to an oscillating drive source 9 composed of a motor via a gear 8e. The reverse rotation allows the lifting table 10 to move up and down along the guide rod 8b.

【0021】上記昇降テーブル10の上面には、研摩ド
ラム駆動手段2方向に水平となるよう一対のガイドレー
ル12が布設されていて、これらガイドレール12にス
ライドテーブル13が研摩ドラム6の接離方向に移動自
在に支承されている。上記スライドテーブル13上には
角度可変手段14により任意な角度に傾斜自在なチャッ
ク駆動手段15が設けられている。
A pair of guide rails 12 are laid on the upper surface of the elevating table 10 so as to be horizontal in the direction of the polishing drum driving means 2. It is supported movably. On the slide table 13, there is provided a chuck driving means 15 which can be tilted to an arbitrary angle by an angle changing means 14.

【0022】上記角度可変手段14は、図3に示すよう
にスライドテーブル13上に固定された支持枠14aの
上部に、可動部材14bを有している。上記可動部材1
4bは、スライドテーブル13の移動方向と直交する方
向に設けられた水平軸14cを介して上記支持枠14a
の上部に回動自在に支承されており、油圧シリンダなど
のアクチュエータ14dにより水平軸14cを中心に任
意な角度傾斜できるようになっている。そして上記可動
部材14bにチャック駆動手段15のチャック駆動源1
6が取付けられている。
The angle varying means 14 has a movable member 14b above a support frame 14a fixed on the slide table 13, as shown in FIG. The movable member 1
Reference numeral 4b denotes the support frame 14a via a horizontal shaft 14c provided in a direction orthogonal to the moving direction of the slide table 13.
Is rotatably supported on the upper part of the shaft, and can be inclined at an arbitrary angle about the horizontal shaft 14c by an actuator 14d such as a hydraulic cylinder. The chuck driving source 1 of the chuck driving means 15 is attached to the movable member 14b.
6 are attached.

【0023】上記チャック駆動源16は例えばモータよ
り構成されていて、研摩ドラム6に寄った位置に支承さ
れた回転軸16aにギヤ16bを介して接続されてお
り、回転軸16aの先端に、チャック17が固着されて
いる。上記チャック17は、鏡面加工するウエハ20の
外径より小径となっていて、上面に上記ウエハ20が着
脱自在に吸着できるようになっている。
The chuck driving source 16 is composed of, for example, a motor, and is connected to a rotating shaft 16a supported at a position close to the polishing drum 6 via a gear 16b. 17 is fixed. The chuck 17 has a smaller diameter than the outer diameter of the wafer 20 to be mirror-finished, so that the upper surface of the chuck 17 can detachably adsorb the wafer 20.

【0024】一方、上記スライドテーブル13の下面か
らは、筐体3a内にブラケット13aが突設されてい
て、このブラケット13aの先端に付勢手段18のケー
ブル18aの一端が結着されている。上記付勢手段18
は、重錘18bの重量を利用して、チャック17に取付
けられたウエハ20を研摩ドラム6の外周面に圧接させ
るもので、昇降テーブル10の下面に固着された支持部
材10cに例えば3個のガイドローラ18c,18d,
18eが回転自在に支承されている。
On the other hand, a bracket 13a protrudes from the lower surface of the slide table 13 into the housing 3a, and one end of a cable 18a of the urging means 18 is connected to the tip of the bracket 13a. The urging means 18
Is to press the wafer 20 attached to the chuck 17 against the outer peripheral surface of the polishing drum 6 by using the weight of the weight 18b, and for example, three support members 10c fixed to the lower surface of the lifting table 10 Guide rollers 18c, 18d,
18e is rotatably supported.

【0025】そしてこれらガイドプーリ18c〜18e
に迂回されたケーブル18aの他端に上記重錘18bが
結着されていると共に、支持部材10cには、退避手段
19がほぼ水平に取付けられている。上記退避手段19
は例えば油圧シリンダや空圧シリンダより構成されてい
て、シリンダ19aより研摩ドラム6と反対の方向に突
設されたピストン杆19b先端に、一対のガイド杆19
cの一端面に固着された連結杆19dが固着されてい
る。
These guide pulleys 18c-18e
The weight 18b is connected to the other end of the cable 18a that is detoured to the support member 10c, and a retracting means 19 is attached to the support member 10c substantially horizontally. Evacuation means 19
Is composed of, for example, a hydraulic cylinder or a pneumatic cylinder, and a pair of guide rods 19 is provided at the tip of a piston rod 19b projecting from the cylinder 19a in a direction opposite to the polishing drum 6.
A connecting rod 19d fixed to one end face of the link c is fixed.

【0026】各ガイド杆19cの他端側は、上記ブラケ
ット13aに形成された切欠き13bに緩く挿通されて
いると共に、各ガイド杆19cの他端に突設されたスト
ッパ19dは、上記切欠き13bより大径に形成されて
いて、このストッパ19dがブラケット13aに係合す
ることにより、付勢手段18の付勢力に抗してチャック
駆動手段14を研摩ドラム6より離間させる方向へ退避
できるようになっている。
The other end of each guide rod 19c is loosely inserted into a notch 13b formed in the bracket 13a, and a stopper 19d protruding from the other end of each guide rod 19c is connected to the notch 13d. 13b, the stopper 19d is engaged with the bracket 13a so that the chuck driving means 14 can be retracted in the direction of separating the chuck driving means 14 from the polishing drum 6 against the urging force of the urging means 18. It has become.

【0027】なお図中15eは角度可変手段14及びチ
ャック駆動手段15を覆うカバーを示す。また上記実施
の形態では、研摩ドラム駆動手段2の近傍に1基のウエ
ハ駆動手段3が設置されている場合について説明した
が、実際には同様な構造のウエハ駆動手段3が複数基設
置されていて、これらウエハ駆動手段3は独立して制御
できるようになっている。
In the figure, reference numeral 15e denotes a cover which covers the angle varying means 14 and the chuck driving means 15. Further, in the above-described embodiment, the case where one wafer driving unit 3 is installed near the polishing drum driving unit 2 has been described. However, actually, a plurality of wafer driving units 3 having the same structure are installed. Thus, these wafer driving means 3 can be controlled independently.

【0028】次に上記構成された鏡面加工装置の作用を
説明する。鏡面加工するウエハ20は、予め外周縁の角
部が図5に示すように面取り加工されており、最近で
は、面取り加工されたウエハ20の裏面に、バックシー
ル用の裏面酸化膜20bを生成することがあり、鏡面加
工工程で外周縁の酸化皮膜を完全に除去できないと、後
工程の熱処理工程で面取り部20aに粒状のポリシリコ
ンよりなるノジュール20cが発生する。このノジュー
ル20cを除去しないと、熱処理工程中に剥れ落ちて、
パーティクルの発生原因となるため、面取り部20aを
鏡面加工する際、裏面酸化膜20bの生成されたウエハ
20については、裏面酸化皮膜20bも同時に除去して
いる。
Next, the operation of the above-structured mirror finishing apparatus will be described. The outer peripheral edge of the wafer 20 to be mirror-finished is preliminarily chamfered as shown in FIG. 5, and recently, a back surface oxide film 20b for back sealing is formed on the back surface of the chamfered wafer 20. If the oxide film on the outer peripheral edge cannot be completely removed in the mirror polishing process, nodules 20c made of granular polysilicon are generated in the chamfered portion 20a in the subsequent heat treatment process. If this nodule 20c is not removed, it will peel off during the heat treatment process,
When the chamfered portion 20a is mirror-finished, the backside oxide film 20b is also removed from the wafer 20 on which the backside oxide film 20b has been formed, since this causes particles to be generated.

【0029】まずチャック17が水平となる位置でチャ
ック駆動手段15を停止させて、図示しない搬送手段に
より鏡面加工すべきウエハ20をチャック17の上面に
搬入して、チャック17の上面に吸着保持させる。次に
この状態で、ウエハ20の面取り部20aの面取り角度
θに合せて、角度可変手段14により水平軸14cを中
心にチャック17の回転中心Oを傾斜させる。
First, the chuck driving means 15 is stopped at a position where the chuck 17 becomes horizontal, and the wafer 20 to be mirror-finished is carried into the upper surface of the chuck 17 by a transfer means (not shown) and is suction-held on the upper surface of the chuck 17. . Next, in this state, the rotation center O of the chuck 17 is inclined about the horizontal axis 14c by the angle varying means 14 in accordance with the chamfer angle θ of the chamfered portion 20a of the wafer 20.

【0030】そしてドラム駆動源7により研摩ドラム6
を、またチャック駆動源16によりチャック17を回転
させながら、退避手段19を収縮して、チャック駆動手
段15を研摩ドラム6方向へ移動させ、チャック17に
保持されたウエハ20の面取り部20aを図1の仮想線
に示すように研摩ドラム6の外周面に当接させ、同時に
オシレート手段18により昇降テーブル10を研摩ドラ
ム6の回転中心O′と平行する方向へ上下動(オシレー
ト)させて、面取り部20aの鏡面加工を開始する。
Then, the polishing drum 6 is driven by the drum driving source 7.
The retracting means 19 is contracted while the chuck 17 is rotated by the chuck driving source 16, and the chuck driving means 15 is moved toward the polishing drum 6, and the chamfered portion 20 a of the wafer 20 held by the chuck 17 is illustrated. As shown by the imaginary line 1, the elevating table 10 is moved up and down (oscillate) in a direction parallel to the rotation center O ′ of the polishing drum 6 by means of the oscillating means 18, and the chamfering is performed. The mirror processing of the part 20a is started.

【0031】また鏡面加工中は、付勢手段18の重錘1
8bの重量を利用して一定の面圧で面取り部20aを研
磨ドラム6の外周面へ圧接させる。なお、複数基のウエ
ハ駆動手段3が設置されている場合は、鏡面加工するウ
エハ20の研摩条件に応じて、各ウエハ駆動手段3に設
けられたオシレート手段8のオシレート速度やストロー
クなどを個別に制御することにより、各ウエハ20毎に
最適な研摩条件で面取り部20aの鏡面加工が可能にな
る。
During the mirror finishing, the weight 1 of the urging means 18 is
The chamfered portion 20a is pressed against the outer peripheral surface of the polishing drum 6 with a constant surface pressure using the weight of 8b. When a plurality of wafer driving units 3 are provided, the oscillation speed and stroke of the oscillation unit 8 provided for each wafer driving unit 3 are individually determined according to the polishing conditions of the wafer 20 to be mirror-finished. By performing the control, the mirror polishing of the chamfered portion 20a can be performed under the optimal polishing conditions for each wafer 20.

【0032】以上のようにして一方の面取り部20aの
鏡面加工が完了したら、退避手段19によりチャック駆
動手段15を研摩ドラム6と離間する方向へ退避させな
がら、チャック17を水平位置へ戻し、この状態で片面
の鏡面加工が完了したウエハ20を上下反転して再びチ
ャック17に吸着させ、再び上記操作を繰返して残りの
面取り部20aの鏡面加工を行うもので、ウエハ駆動手
段3が複数基設置されている場合は、片面の鏡面加工が
完了したウエハ20を反転しながら次のウエハ駆動手段
3へ搬入して、残りの面取り部20aの鏡面加工を行う
ようにしてもよい。
When the mirror finishing of one chamfered portion 20a is completed as described above, the chuck 17 is returned to the horizontal position while the chuck driving means 15 is retracted by the retracting means 19 in the direction away from the polishing drum 6, and In this state, the wafer 20 which has been mirror-polished on one side is turned upside down, sucked on the chuck 17 again, and the above operation is repeated to mirror-process the remaining chamfered portion 20a. In such a case, the wafer 20 on which one-side mirror processing has been completed may be carried into the next wafer driving means 3 while being inverted, and the remaining chamfered portion 20a may be subjected to mirror processing.

【0033】またチャック17を水平に保持した状態で
チャック駆動手段15を研摩ドラム6側へ移動させ、ウ
エハ20の外周面を研摩ドラム6の外周面に当接するこ
とにより、ウエハ20の外周面の鏡面加工も可能であ
る。
Further, the chuck driving means 15 is moved toward the polishing drum 6 while the chuck 17 is held horizontally, and the outer peripheral surface of the wafer 20 is brought into contact with the outer peripheral surface of the polishing drum 6. Mirror finishing is also possible.

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明の実施の形態になる半導体ウエハの鏡
面加工装置を示す正面図である。
FIG. 1 is a front view showing a semiconductor wafer mirror finishing apparatus according to an embodiment of the present invention.

【図2】この発明の実施の形態になる半導体ウエハの鏡
面加工装置を示す平面図である。
FIG. 2 is a plan view showing a semiconductor wafer mirror processing apparatus according to an embodiment of the present invention;

【図3】図1のA方向からの矢視図である。FIG. 3 is a view from arrow A in FIG. 1;

【図4】図1のB−B線に沿う断面図である。FIG. 4 is a sectional view taken along line BB of FIG. 1;

【図5】鏡面加工するウエハの説明図である。FIG. 5 is an explanatory view of a wafer to be mirror-finished;

【符号の説明】[Explanation of symbols]

2…研摩ドラム駆動手段 3…ウエハ駆動手段 6…研摩ドラム 7…ドラム駆動源 8…オシレート手段 14…角度可変手段 15…チャック駆動手段 16…チャック駆動源 17…チャック 18…付勢手段 19…退避手段 20…ウエハ 20a…面取り部 O…チャック回転中心 2 Polishing drum driving means 3 Wafer driving means 6 Polishing drum 7 Drum driving source 8 Oscillating means 14 Angle changing means 15 Chuck driving means 16 Chuck driving source 17 Chuck 18 Urging means 19 Retreat Means 20: Wafer 20a: Chamfer O: Chuck rotation center

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 研摩ドラム(6)及びこの研摩ドラム
(6)を回転駆動するドラム駆動源(7)よりなる研摩
ドラム駆動手段(2)と、上記研摩ドラム駆動手段
(2)の近傍に設置された少なくとも1基のウエハ駆動
手段(3)と、上記ウエハ駆動手段(3)に設けられ、
かつオシレート手段(8)により上記研摩ドラム(6)
の軸線方向にオシレート自在なチャック駆動手段(1
5)と、上記チャック駆動手段(15)に設けられ、か
つ上記研摩ドラム(6)の外周面で面取り部(20a)
を鏡面加工するウエハ(20)を保持するチャック(1
7)と、上記チャック(17)を回転駆動するチャック
駆動源(16)とを具備したことを特徴とする半導体ウ
エハの鏡面加工装置。
1. A polishing drum driving means (2) comprising a polishing drum (6) and a drum driving source (7) for rotationally driving the polishing drum (6), and installed near the polishing drum driving means (2). At least one wafer driving means (3) provided, and
And the above-mentioned polishing drum (6) by an oscillating means (8)
Chuck driving means (1
5) a chamfered portion (20a) provided on the chuck driving means (15) and formed on the outer peripheral surface of the polishing drum (6).
Chuck (1) holding a wafer (20) for mirror-finish
7) and a chuck driving source (16) for rotating and driving the chuck (17).
【請求項2】 チャック駆動手段(15)を研摩ドラム
(6)方向へ付勢する付勢手段(18)と、研摩ドラム
(6)より離間する方向へ退避させる退避手段(19)
とより構成してなる請求項1記載の鏡面加工装置。
2. An urging means (18) for urging the chuck driving means (15) toward the polishing drum (6), and a retracting means (19) for retracting the chuck driving means (15) away from the polishing drum (6).
2. The mirror finishing apparatus according to claim 1, wherein the apparatus comprises:
【請求項3】 チャック駆動手段(15)に設けられた
チャック(17)の回転中心(O)を、任意な角度に傾
斜させる角度可変手段(14)を設けてなる請求項1記
載の鏡面加工装置。
3. The mirror finishing according to claim 1, further comprising an angle varying means (14) for inclining the rotation center (O) of the chuck (17) provided in the chuck driving means (15) to an arbitrary angle. apparatus.
【請求項4】 研摩ドラム駆動手段(2)の近傍に、複
数基のウエハ駆動手段(3)を設置してなる請求項1記
載の鏡面加工装置。
4. The mirror processing apparatus according to claim 1, wherein a plurality of wafer driving means (3) are provided near the polishing drum driving means (2).
JP9327672A 1997-11-28 1997-11-28 Mirror finishing device for semiconductor wafer Pending JPH11156684A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9327672A JPH11156684A (en) 1997-11-28 1997-11-28 Mirror finishing device for semiconductor wafer
KR1019980051599A KR19990045683A (en) 1997-11-28 1998-11-28 Mirror surface processing apparatus of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9327672A JPH11156684A (en) 1997-11-28 1997-11-28 Mirror finishing device for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPH11156684A true JPH11156684A (en) 1999-06-15

Family

ID=18201694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9327672A Pending JPH11156684A (en) 1997-11-28 1997-11-28 Mirror finishing device for semiconductor wafer

Country Status (2)

Country Link
JP (1) JPH11156684A (en)
KR (1) KR19990045683A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100429739B1 (en) * 2001-05-02 2004-05-03 스피드팜 가부시키가이샤 Apparatus and method of abrading outer periphery of device wafer
CN113878411A (en) * 2021-11-12 2022-01-04 陕西金信天钛材料科技有限公司 Positioning fixture for rotary polishing of R surface of sliding blade of compressor and polishing method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2719855B2 (en) * 1991-05-24 1998-02-25 信越半導体株式会社 Mirror chamfering device around wafer
JP2832138B2 (en) * 1993-09-30 1998-12-02 信越半導体株式会社 Polishing device for wafer peripheral part
JPH07276229A (en) * 1994-04-01 1995-10-24 Nippon Steel Corp Semiconductor wafer edge section polishing device
JPH08168946A (en) * 1994-12-13 1996-07-02 Shin Etsu Handotai Co Ltd Polishing device for outer periphery of wafer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100429739B1 (en) * 2001-05-02 2004-05-03 스피드팜 가부시키가이샤 Apparatus and method of abrading outer periphery of device wafer
CN113878411A (en) * 2021-11-12 2022-01-04 陕西金信天钛材料科技有限公司 Positioning fixture for rotary polishing of R surface of sliding blade of compressor and polishing method thereof

Also Published As

Publication number Publication date
KR19990045683A (en) 1999-06-25

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