JPH11145185A - Semiconductor device and manufacture of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device for surely achieving the electrical connection of the pad electrode of a semiconductor element with the terminal electrode of a circuit board in a simple process, even when the arrangement pitches of the pad electrode of the semiconductor element are small. SOLUTION: In a semiconductor, a semiconductor element 10 is characterized having plural pad electrodes 11 on the surface is mounted on a circuit board 20 having terminal electrodes 21 arranged according to a pattern corresponding to the pad electrodes. Plural conductive parts 30 arranged between the pad electrodes 11 of the semiconductor element 10 and the terminal electrodes 21 of the circuit board 20 for electrically connecting them, and sealing parts 35 for mutually insulating those conductive parts 30 and connecting the semiconductor element 10 with the circuit board 20 are provided between the semiconductor element 10 and the circuit board 20. The conductive parts 30 are formed by including conductive particles in a high polymer substance, and the high polymer substance is the hardened object of sensitive radiation resin materials.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device having a semiconductor element mounted on a circuit board and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, the number of electrodes in a semiconductor device has been increased with higher functionality and higher capacity. The center-to-center distance tends to be smaller and the density tends to be higher. Therefore, as a semiconductor element, BGA
(Ball Grid Array) type, CSP (Ch
ip Scale Package) type, FC (Fli
Semiconductor elements having electrodes formed on the surface in accordance with a lattice point arrangement, such as a (p Chip) type, have begun to be frequently used. In these semiconductor elements, a protruding electrode for connection made of solder (hereinafter, referred to as “solder pump”) is formed on a pad electrode formed on the surface.

In a semiconductor device having such solder bumps, a semiconductor device is configured by being mounted by face-down bonding on a circuit board on which terminal electrodes are formed in accordance with a pattern corresponding to a pad electrode of the semiconductor device. . More specifically, as shown in FIG. 10A, a semiconductor element 80 having a solder bump 82 formed on a pad electrode 81 is prepared, and as shown in FIG. On a circuit board 90 on which a terminal electrode 91 is formed according to a pattern opposite to the electrode 81, the semiconductor element 80 is placed in a state where each of the solder bumps 82 is in contact with the corresponding terminal electrode 91 of the circuit board 90. Deploy. By melting the solder bumps 82 in this state, as shown in FIG.
To the terminal electrode 91. By injecting, for example, a thermosetting resin material into the gap S between the semiconductor element 80 and the circuit board 90 and curing the same, FIG.
As shown in (d), the semiconductor element 80 and the circuit board 9
0, a sealing portion 83 is formed.
Is mounted on the circuit board 90 to obtain a semiconductor device.

According to such a method, even if the semiconductor element 80 having the pad electrode 81 formed over a wide range can be mounted on the circuit board 90, each of the pad electrodes 81 of the semiconductor element 80 can be mounted. Can be collectively connected to each of the terminal electrodes 91 of the corresponding circuit board 90, the mounting area of the semiconductor element 80 can be reduced, and the overall size of the semiconductor device can be reduced. It is advantageous.

However, when a semiconductor device is manufactured by mounting the semiconductor element 80 on the circuit board 90 by such a method, there are the following problems. (1) When the semiconductor element 80 is of the FC type, that is, made of a semiconductor chip, if it is in a wafer state, it is collectively soldered onto the pad electrodes of a plurality of semiconductor elements by plating or vapor deposition. Can be formed. However, if the semiconductor element 80 is a BGA type or C
In the case of a packaged device such as an SP type, a molten spherical solder material (hereinafter, referred to as “solder ball”) is applied to each pad electrode 8 in the semiconductor element 80.
By joining the solder bumps one by one, the solder bumps 82 must be formed, and therefore, a high cost is required in forming the solder pump. (2) The solder ball becomes spherical due to the surface tension of the molten solder material. To maintain such a shape, the solder ball needs to have a certain size.
Therefore, when the arrangement pitch of the pad electrodes 81 of the semiconductor element 80 is extremely small, it is difficult to form the solder bumps 82 with the solder balls.

(3) Since the shape and dimensions of the solder bumps 82 tend to change depending on the shape of the pad electrode 81, it is extremely difficult to control the height of the solder bumps 82.
If the protrusion height of the solder pump 82 varies, the electrical connection with the terminal electrode 91 cannot be reliably achieved when the semiconductor element 80 is mounted on the circuit board 90. (4) The electrical inspection of the semiconductor element 80 having the solder bumps 82 is usually performed by bringing an inspection jig such as a pin probe into contact with the solder bumps 82. However, in such an electrical inspection, since the solder bumps 82 may be damaged by contacting the inspection jig, the electrical connection between the pad electrode of the semiconductor element and the terminal electrode of the circuit board is ensured. As a result, high yield cannot be obtained in the manufacture of semiconductor devices. (5) From the viewpoint of the global environment, semiconductor devices
It is desired not to use a lead material such as solder.

(6) The material forming the semiconductor element 80, the material forming the sealing portion 83, and the material forming the circuit board 30 have different coefficients of thermal expansion. Therefore, in the obtained semiconductor device, when a thermal history due to a temperature change or the like is applied, a considerably large stress acts on the solder bumps 82 due to a difference in thermal expansion coefficient of each constituent material. The pump 82 is damaged and a connection failure occurs, and as a result, the electrical connection between the pad electrode 81 of the semiconductor element 80 and the terminal electrode 91 of the circuit board 90 cannot be maintained.

[0008]

SUMMARY OF THE INVENTION The present invention has been made under the above circumstances, and a first object of the present invention is to provide a semiconductor device having a pad electrode on a circuit board having a terminal electrode. In a semiconductor device mounted by face-down bonding, even when the arrangement pitch of the pad electrodes of the semiconductor element is small, the electrical connection between the pad electrodes of the semiconductor element and the terminal electrodes of the circuit board can be easily performed. It is an object of the present invention to provide a semiconductor device which can be surely achieved by simple steps. A second object of the present invention is to stably maintain a good electrical connection state between a pad electrode of a semiconductor element and a terminal electrode of a circuit board even with a change in environment such as a heat history due to a temperature change. It is an object of the present invention to provide a possible semiconductor device. A third object of the present invention is to provide a method capable of advantageously and reliably manufacturing the above semiconductor device.

[0009]

According to the present invention, there is provided a semiconductor device comprising:
A semiconductor device comprising a semiconductor element having a plurality of pad electrodes on a surface mounted on a circuit board having terminal electrodes arranged according to a pattern corresponding to the pad electrode of the semiconductor element, wherein the semiconductor element and the circuit A plurality of conductive portions disposed between the pad electrode of the semiconductor element and the terminal electrode of the circuit board to electrically connect the two with the substrate, and insulate these conductive portions from each other; A sealing portion that joins the semiconductor element to the circuit board, wherein the conductive portion contains conductive particles in a polymer material, and the polymer material cures a radiation-sensitive resin material. It is characterized by being a thing.

[0010] In the semiconductor device of the present invention, it is preferable that the polymer material constituting the conductive portion has elasticity.

A method for manufacturing a semiconductor device according to the present invention is a method for manufacturing a semiconductor device as described above, wherein a carrier material on which a semiconductor element or a semiconductor chip having a plurality of pad electrodes on its surface is mounted is prepared. Forming a conductive part forming material layer in which conductive particles exhibiting magnetism are dispersed in a radiation-sensitive resin material on one surface of the element or carrier material on which a pad electrode is formed, and forming the conductive part forming material layer On the other hand, by applying a magnetic field in the thickness direction, the conductive particles are oriented in the thickness direction of the conductive portion forming material layer, and then, with respect to this conductive portion forming material layer,
A step of forming a conductive portion on a pad electrode of a semiconductor element or a carrier material by performing exposure processing and development processing.

[0012]

Embodiments of the present invention will be described below in detail. FIG. 1 is an explanatory cross-sectional view schematically showing a configuration of an example of a semiconductor device according to the present invention. This semiconductor device includes a semiconductor element 1 having a pad electrode 11.
No. 0 is mounted by face-down bonding on a circuit board 20 having terminal electrodes 21 arranged in a pattern opposite to the pad electrodes 11 of the semiconductor element 10. Pad electrode 11 of semiconductor element 10
Is made of, for example, aluminum, and the terminal electrode 21 of the circuit board 20 is made of, for example, copper, gold, silver, palladium, or the like. Further, as a material constituting the substrate body of the circuit board 20, for example, ceramics,
Glass fiber reinforced epoxy resin can be used.

A columnar conductive portion 30 is arranged between the pad electrode 11 of the semiconductor element 10 and the terminal electrode 21 of the circuit board 20. The conductive portion 30 allows the pad electrode 11 of the semiconductor element 10 to be connected to the circuit. It is electrically connected to the terminal electrode 21 of the substrate 20. Further, a sealing portion 35 is formed between the semiconductor element 10 and the circuit board 20 to insulate each of the conductive portions 30 from each other and to integrally join the semiconductor element 10 and the circuit board 20 together. I have.

The height H of the conductive portion 30 is appropriately selected according to the arrangement pitch p of the pad electrodes 11 in the semiconductor element 10 and the electrode diameter d. For example, when the arrangement pitch p of the pad electrodes 11 in the semiconductor element 10 is 150 μm and the electrode diameter d is 100 μm, the height H of the conductive portion 30 is 50 μm.
It is preferably from 250 to 250 μm.

The conductive portion 30 is a material in which conductive particles R are contained in a polymer substance, preferably in a state of being oriented in the height direction. As the polymer substance constituting the conductive portion 30, a cured product of a radiation-sensitive resin material is used. Such a radiation-sensitive resin material has a thickness of, for example, 10 to 10
The photoresist is not particularly limited as long as it can form a 0 μm film, but it is preferable to use a positive photoresist from the viewpoint of resolution and peelability. Examples of the radiation-sensitive resin material include a novolak-based radiation-sensitive resin, a conjugated diene-based radiation-sensitive resin, and an acrylic radiation-sensitive resin. Among these, conjugated diene-based radiation-sensitive resins include, for example, cyclized polybutadiene, cyclized polyisoprene, polybutadiene or polyisoprene with maleic anhydride added thereto, and polybutadiene or polyisoprene with (meth) acryloyl group or azide group. And the like, and a composition containing an elastic polymer such as polybutadiene or polyisoprene, a vinyl monomer such as an acrylate ester, and a photopolymerization initiator. Is mentioned. Examples of the acrylic radiation-sensitive resin include those using a compound having 1, 2, 3, or 4 or more acryloyl groups.

It is preferable that the polymer material constituting the conductive portion 30 has elasticity. In particular, the degree of elasticity of the entire conductive portion 30 is, for example, 3.5 × 1 in terms of compression modulus.
0 ^{6 to 6.2} which becomes × 10 ⁶ N / m ² are preferred.
Preferable radiation-sensitive resin materials for obtaining such a polymer substance include conjugated diene-based radiation-sensitive resins.

As the conductive particles R constituting the conductive portion 30, it is preferable to use particles exhibiting magnetism in that they can be oriented in the height direction of the conductive portion 30 by a method described later. As the conductive particles R exhibiting magnetism, those obtained by forming a conductive coating on core particles made of a conductive magnetic material can be preferably used. As the conductive magnetic material forming the core particles, nickel, Examples of the metal material exhibiting magnetism such as iron or an alloy thereof include metal materials such as gold, silver, and palladium as the material forming the conductive film.

In addition, a conductive particle R whose surface is treated with a coupling agent such as a silane coupling agent or a titanium coupling agent can be appropriately used as long as the conductivity is not impaired. By treating the surface of the conductive particles R with the coupling agent, the adhesive force between the conductive particles R and the polymer substance is increased, and as a result, the obtained conductive portion 30 has high durability. Become.

The ratio of the conductive particles R in the conductive portion 30 is preferably 4 to 25% by volume, and particularly preferably 8 to 23%. The particle size of the conductive particles R is appropriately selected according to the size and shape of the pad electrode 11 of the semiconductor element 10. For example, if the pad electrode 11 of the semiconductor element 10 has a width of 10
In the case of a square shape of 0 μm, the particle size of the conductive particles R is preferably 10 to 30 μm, whereby good conductivity is obtained in the conductive portion 30, and the desired electrical conductivity is obtained. Connection can be reliably achieved.

As a material for forming the sealing portion 35, a thermosetting resin can be suitably used, and specific examples thereof include an epoxy resin, a polyimide resin, and a phenol resin.

According to the above semiconductor device, the semiconductor element 1
0 is electrically connected to the terminal electrode 21 of the circuit board 20 via the conductive portion 30 in which the conductive particles R are contained in the polymer substance. When performing, the pad electrode 1 of the semiconductor element 10
Since it is not necessary to form a solder pump on 1 and the polymer material in the conductive portion 30 is made of a cured material of a radiation-sensitive resin material, the conductive portion 30 must be formed by a photolithography technique. Becomes possible,
Therefore, even if the arrangement pitch of the pad electrodes 11 of the semiconductor element 10 is small, the electrical connection between the pad electrodes 11 of the semiconductor element 10 and the terminal electrodes 21 of the circuit board 20 can be reliably achieved by a simple process. it can.

Further, according to the configuration in which the conductive portion 30 is made of an elastic polymer material, even when an inspection jig such as a pin probe is brought into contact with the conductive portion 30 in the electrical inspection of the semiconductor element 10. The conductive part 30 is not damaged. Further, when the semiconductor device receives the thermal history due to the temperature change, the semiconductor device 10, the circuit board 20, and the sealing portion 35 have a considerably large thermal expansion coefficient due to the difference in thermal expansion coefficient between the respective constituent materials. Even if a stress is applied, the conductive portion 30 is deformed according to the magnitude of the stress applied to the conductive portion 30 and does not break. Therefore,
A favorable electrical connection between the pad electrode 11 of the semiconductor element 10 and the terminal electrode 21 of the circuit board 20 can be stably maintained even with environmental changes such as thermal history due to temperature changes.

Next, a method of manufacturing a semiconductor device according to the present invention will be described. In the production method of the present invention, first, a conductive part forming material composed of a fluid mixture is prepared by dispersing conductive particles in a liquid radiation-sensitive resin material. Then, as shown in FIG.
The prepared conductive portion forming material is applied to one surface on which the pad electrode 11 is formed, thereby forming a conductive portion forming material layer 31 on one surface of the semiconductor element 10.
In the above, since the conductive portion forming material has a high viscosity due to dispersion of the conductive particles, it is preferable to use a printing method as a means for applying the conductive portion forming material.

By applying a magnetic field to the conductive portion forming material layer 31 in the thickness direction of the conductive portion forming material layer 31 while pre-baking or before pre-baking the conductive portion forming material layer 31 thus formed. Then, the conductive particles are oriented in the thickness direction of the conductive portion forming material layer 31. Specifically, as shown in FIG. 3, the semiconductor element 10 on which the conductive portion forming material layer 31 is formed is disposed between a pair of electromagnets 40 and 41, and the electromagnets 40 and 41 are operated. Then, a parallel magnetic field acts in the thickness direction of the conductive portion forming material layer 31, and as a result, as shown in FIG. 4, the conductive particles R in the conductive portion forming material layer 31 are oriented so as to be arranged in the thickness direction.

In the above description, the intensity of the parallel magnetic field applied to the conductive portion forming material layer 31 is 1500 to 500 on average.
A size of 0 Gauss is preferable. As a means for applying a parallel magnetic field, a permanent magnet can be used instead of an electromagnet. As such a permanent magnet, Alnico (F
e-Al-Ni-Co alloy), ferrite, and the like are preferable. In order to orient the conductive particles R in the conductive portion forming material layer 31, a parallel magnetic field may be applied to the entire conductive portion forming material layer 31 in the thickness direction thereof. No equipment is required. The prebaking conditions vary depending on the type of the radiation-sensitive resin material constituting the conductive portion forming material layer 31, but when a general positive resist for a thick film is used, the heating temperature is increased by heating in an oven. Is 90 to 95 ° C., and the heating time is 10 to 40 minutes.

Next, as shown in FIG.
0, for example, on one surface of a plate-shaped transparent substrate 46, the semiconductor element 1
A photomask 45 on which a light-shielding film 47 is formed is arranged in accordance with a pattern opposite to the arrangement pattern of the pad electrodes 11 of 0, and the conductive portion forming material layer 31 is exposed through the photomask 45. Then, the conductive portion 30 is formed on the pad electrode 11 of the semiconductor element 10 by performing a developing process on the exposed portion of the conductive portion forming material layer 31 as shown in FIG.

In the above, the conditions of the exposure processing and the development processing differ depending on the type of the radiation-sensitive resin material constituting the conductive part forming material layer 31, and include, for example, visible light, ultraviolet light, infrared light, X-ray, electron beam, and the like. Exposure processing is performed using radiation, and development processing is performed using a developer composed of an alkali or an organic solvent. When a general positive resist for a thick film is used, light having a wavelength of 405 nm is used. The exposure process is performed under the condition that the exposure amount is 200 to 600 mJ / cm ^2, and the development process is performed using an organic alkali developer.

Next, the pad electrode 11 of the semiconductor element 10
Post-baking is performed on the conductive portion 30 formed thereon, and then, as shown in FIG. 7, the semiconductor element 10 having the conductive portion 30 formed on the pad electrode 11 is placed on the circuit board 20.
Of the conductive part 3 on the terminal electrode 21 of the circuit board 20
0 is in a state of contact. Then, with the semiconductor element 10 pressed toward the circuit board 20, the semiconductor element 10
The sealing portion forming material 36 is provided in the gap S between
Of the sealing portion forming material 36, and the hardening process of the sealing portion forming material 36 to insulate the conductive portions 30 from each other and integrally join the semiconductor element 10 and the circuit board 20.
5 are formed, and the semiconductor device is manufactured. In the above, the conditions of the post-baking are as follows.
Although it depends on the type of the radiation-sensitive resin material constituting, when using a general positive resist for a thick film,
The heating temperature is 100 to 140 ° C. and the heating time is 5 to 15 minutes. The curing treatment of the sealing portion forming material 36 differs depending on the type of the sealing portion forming material, but is usually performed by light irradiation or heating.

According to the above manufacturing method, since the photolithography method is used in forming the conductive portion 30, the conductive portion 30 can be formed on the pad electrode 11 of the semiconductor element 10 at a time. Moreover, the conductive particles R
Is exposed to the conductive part forming material layer 31 in a state of being oriented in the thickness direction of the conductive part forming material layer 31. Therefore, in the exposure processing, light is surely transmitted to the bottom of the conductive part forming material layer 31. Therefore, a high resolution can be obtained in the subsequent development process. Therefore, even if the arrangement pitch of the pad electrodes 11 of the semiconductor element 10 is small, they are located on the respective pad electrodes 11 and are separated from each other. Thus, the conductive portion 30 in the state as described above can be reliably formed.
In addition, since the conductive particles R of the conductive portion 30 to be formed are oriented in the height direction, high conductivity is obtained in the height direction of the conductive portion 30.

The method of manufacturing a semiconductor device according to the present invention is not limited to the above-described method, and for example, the following various changes can be made. (1) If the semiconductor element is packaged, a conductive portion may be formed on the pad electrode of the carrier material before the semiconductor chip is mounted. (2) When the semiconductor element is a semiconductor chip, a conductive portion can be formed on the pad electrode in a wafer state. According to such a method, it is possible to collectively form a conductive portion on each pad electrode in a plurality of semiconductor elements. (3) When the semiconductor element is packaged, a plurality of semiconductor elements or carrier materials are fixed and held by appropriate means so that each pad electrode is located substantially on the same plane. In this state, a conductive portion can be formed on the pad electrode of the semiconductor element or the carrier material. According to such a method, a conductive portion can be collectively formed on each pad electrode of a plurality of semiconductor elements or carrier materials.

(4) After forming the conductive portion 30, the sealing portion 3
Before forming 5, the semiconductor element 10 can be subjected to an electrical inspection while the semiconductor element 10 is pressed toward the circuit board 20. According to such a method, even if the semiconductor element 10 is defective, the semiconductor element 10 is not bonded to the circuit board 20, so that the semiconductor element 10 may be simply replaced, and as a result, the semiconductor device High repairability is obtained in the production of. (5) As the radiation-sensitive resin material for forming the conductive portion 30, a negative-type resin such as the conjugated diene-based radiation-sensitive resin described above can be used. In this case, for example, the pad electrode 11 of the semiconductor element 10 is used as a photomask.
A light-transmitting portion is formed according to a pattern opposite to the arrangement pattern described above, and an organic solvent such as xylene is used as a developing solution.

(6) The sealing portion 35 can also be formed by the following method (a) or (b). (A) As shown in FIG. 8, a sealing portion forming material layer 37 is formed on one surface of the circuit board 20 on which the terminal electrodes 21 are formed, and a circuit in which the sealing portion forming material layer 37 is formed. The semiconductor element 10 in which the conductive portion 30 is formed on the pad electrode 11 is overlaid on the substrate 20, so that the conductive portion 30 is in contact with the terminal electrode 21 of the circuit board 20. Then, in a state where the semiconductor element 10 is pressed toward the circuit board 20, a hardening treatment of the sealing portion forming material layer 37 is performed to insulate the conductive parts 30 from each other and to allow the semiconductor element 10 and the circuit board 20. Is integrally formed. (B) As shown in FIG. 9, a sealing portion forming material layer 37 is formed on one surface of the semiconductor element 10 on which the conductive portion 30 is formed, and a semiconductor in which the sealing portion forming material layer 37 is formed. The element 10 is superimposed on one surface of the circuit board 20 on which the terminal electrodes 21 are formed.
The conductive portion 30 is in contact with the terminal electrode 21 of FIG. Then, in a state where the semiconductor element 10 is pressed toward the circuit board 20, a hardening treatment of the sealing portion forming material layer 37 is performed to insulate each of the conductive portions 30 from each other and to make the semiconductor element 10 and the circuit board 20 Sealing part 35 that integrally joins
Is formed. In the above methods (a) and (b), the post-baking of the conductive portion 30 is performed using the sealing portion forming material layer 3.
7 can be performed in the same step as the curing process.

[0033]

The present invention will be described below in more detail with reference to Examples, but it should not be construed that the present invention is limited thereto. <Examples> (1) Preparation of conductive part forming material: In a novolak-based positive resist, conductive particles having an average particle diameter of 25 µm, in which a core film made of nickel and a coating film made of gold are formed on a core particle made of nickel. A material for forming a conductive portion was prepared by mixing at a ratio of 60% by weight.

(2) Formation of conductive part: dimensions 100 μm × 1
A semiconductor element (10) in which a plurality of pad electrodes (21) made of 00 μm rectangular aluminum are arranged at a pitch of 180 μm is prepared. On one surface of the semiconductor element (10) on which the pad electrode (11) is formed, By applying the prepared conductive part forming material by printing method,
A conductive portion forming material layer (31) having a thickness of 100 μm was formed on one surface of the semiconductor element (10) (see FIG. 2).
The semiconductor element (10) on which the conductive layer forming material layer (31) is formed is disposed between a pair of electromagnets (40, 41), and the electromagnets (40, 41) are operated. About 200 in the thickness direction of the forming material layer (31).
A parallel magnetic field of 0 Gauss is applied, and 85 ° C, 30
The pre-baking of the conductive portion forming material layer (31) was performed under the conditions of minutes (see FIGS. 3 and 4).

Next, a photomask 45 having a light-shielding film (47) formed on one surface of the plate-shaped transparent substrate (46) in accordance with a pattern opposite to the arrangement pattern of the pad electrodes (11) of the semiconductor element (10). The conductive part forming material layer (31) is exposed to light having a wavelength of 405 nm under an exposure amount of 400 mJ / cm ^2, and then the conductive part forming material layer (31) is applied to the conductive part forming material layer (31). Then, by performing development processing using a developing solution composed of tetramethylammonium hydroxide, the semiconductor device (1
A conductive portion (30) was formed on the pad electrode (11) of (0) (see FIGS. 5 and 6). Then, the semiconductor element (1
0) on the conductive portion (3) formed on the pad electrode (11).
0) was post-baked at 150 ° C. for 30 minutes. In the above, the ratio of the conductive particles in the conductive portion (30) is 45% by volume.

(3) Formation of sealing portion: A semiconductor element (1) is formed on the surface of a substrate body made of glass fiber reinforced epoxy resin.
A circuit board (20) on which a terminal electrode (21) is formed in accordance with a pattern opposite to the pad electrode (11) of (0) is prepared, and the semiconductor element (1) is mounted on the circuit board (20).
0) is arranged such that each of the conductive portions (30) is located on the terminal electrode 21 of the circuit board (20), and the semiconductor element (10)
While the semiconductor element (10) is pressed in the thickness direction.
A sealing portion forming material (36) made of epoxy resin is injected into a gap (S) between the sealing portion forming material (36) and the circuit board (20), and the sealing portion forming material (36) is cured. The stopper (35) was formed, and the semiconductor device A having the configuration shown in FIG. 1 was manufactured.

COMPARATIVE EXAMPLE Using the same semiconductor element (80) and circuit board (90) as the semiconductor element and circuit board used in Example 1, a semiconductor device B was manufactured according to the method shown in FIG. The solder bumps (8
A solder made of a lead-tin alloy (composition ratio: lead / tin = 95/5) was used as a material constituting 2), and an epoxy resin was used as a material constituting a sealing portion (83).

<Experimental Example> One cycle of the semiconductor device A and the semiconductor device B was performed at 125 ° C. for 30 minutes.
After performing a total of 1000 heat cycle tests at −40 ° C. for 30 minutes, the electrical connection between the semiconductor element and the circuit board in each semiconductor device was examined. In the semiconductor device A according to the example, the electrical connection between all the pad electrodes and the terminal electrodes was good. On the other hand, in the semiconductor device B according to the comparative example, the electrical connection between some of the pad electrodes and the terminal electrodes was poor.

[0039]

According to the semiconductor device of the first aspect,
Since the pad electrode of the semiconductor element and the terminal electrode of the circuit board are electrically connected to each other through a conductive portion containing conductive particles in a polymer substance, when manufacturing the semiconductor device, There is no need to form a solder pump on the pad electrode of the semiconductor element, and since the polymer material in the conductive part is made of a cured product of a radiation-sensitive resin material, the conductive part is formed by photolithography. Therefore, even if the arrangement pitch of the pad electrodes of the semiconductor element is small, the electrical connection between the pad electrodes of the semiconductor element and the terminal electrodes of the circuit board can be reliably achieved in a simple process. it can.

According to the semiconductor device of the second aspect, according to the structure using an elastic polymer material in the conductive portion, an inspection jig such as a pin probe is used in the electrical inspection of the semiconductor element. Even if it comes into contact with conductive parts,
The conductive part is not damaged. Further, by receiving a thermal history due to a temperature change, even if a considerably large stress acts on the conductive portion due to a difference in thermal expansion coefficient between the constituent materials of the semiconductor element, the circuit board, and the sealing portion, The conductive portion is not damaged because it is deformed according to the magnitude of the stress applied thereto. Therefore, even in a change in environment such as a heat history due to a temperature change, a good electrical connection between the pad electrode of the semiconductor element and the terminal electrode of the circuit board can be stably maintained.

According to the method of manufacturing a semiconductor device according to the third aspect, since the photolithography technique is used in forming the conductive portion, the conductive portion can be formed on the pad electrode of the semiconductor element at a time. . Moreover, in order to perform the exposure processing of the conductive part forming material layer in a state where the conductive particles are oriented in the thickness direction of the conductive part forming material layer, in the exposure processing, light is applied to the bottom of the conductive part forming material layer. Can be reliably actuated, whereby high resolution can be obtained in the subsequent development process, so that even if the arrangement pitch of the pad electrodes of the semiconductor element is small, they are located on each pad electrode and separated from each other. The conductive portion in the state can be reliably formed. Further, since the conductive particles of the formed conductive portion are oriented in the height direction, high conductivity is obtained in the height direction of the conductive portion.

[Brief description of the drawings]

FIG. 1 is an explanatory cross-sectional view schematically showing a configuration of an example of a semiconductor device according to the present invention.

FIG. 2 is an explanatory cross-sectional view showing a state in which a conductive portion forming material layer is formed on one surface of a semiconductor element on which a pad electrode is formed.

FIG. 3 is an explanatory view showing a state in which a parallel magnetic field is applied to a conductive part forming material layer.

FIG. 4 is an explanatory view showing a state in which conductive particles in a conductive part forming material layer are oriented in a thickness direction.

FIG. 5 is an explanatory view showing a step of performing an exposure process on a conductive portion forming material layer.

FIG. 6 is an explanatory cross-sectional view showing a state where a conductive portion is formed on a pad electrode of a semiconductor element.

FIG. 7 is an explanatory cross-sectional view showing an example of a step of forming a sealing portion by disposing a semiconductor element on a circuit board.

FIG. 8 is an explanatory cross-sectional view showing another example of a step of forming a sealing portion by disposing a semiconductor element on a circuit board.

FIG. 9 is an explanatory cross-sectional view showing still another example of the step of forming a sealing portion by disposing a semiconductor element on a circuit board.

FIG. 10 is an explanatory view showing a step of mounting a semiconductor element on a circuit board by a conventional method.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Semiconductor element 11 Pad electrode 20 Circuit board 21 Terminal electrode 30 Conductive part 35 Sealing part 36 Sealing part forming material 37 Sealing part forming material layer 40, 41 Electromagnet 45 Photomask 46 Transparent base 47 Light shielding film 81 Pad electrode 82 Solder Bump 83 Sealing part 90 Circuit board 91 Terminal electrode R Conductive particle S Gap

Claims (3)

[Claims] 1. A semiconductor device comprising: a semiconductor element having a plurality of pad electrodes on a surface mounted on a circuit board having terminal electrodes arranged according to a pattern corresponding to the pad electrodes of the semiconductor element; A plurality of conductive portions disposed between the semiconductor device and the circuit board, between the pad electrode of the semiconductor device and the terminal electrodes of the circuit board, and electrically connecting the two; and A sealing portion that insulates the semiconductor elements from each other and joins the semiconductor element to the circuit board; and the conductive portion includes conductive particles in a polymer material, and the polymer material is radiation-sensitive. A semiconductor device, which is a cured product of a conductive resin material. 2. The semiconductor device according to claim 1, wherein the polymer material forming the conductive portion has elasticity. 3. The method for manufacturing a semiconductor device according to claim 1, wherein a carrier material on which a semiconductor element or a semiconductor chip having a plurality of pad electrodes on a surface is mounted is prepared, and the semiconductor element or the carrier material is provided. On one surface on which the pad electrode is formed, a conductive portion forming material layer in which conductive particles exhibiting magnetism are dispersed in a radiation-sensitive resin material is formed, and for the conductive portion forming material layer, By applying a magnetic field in the thickness direction, the conductive particles are oriented in the thickness direction of the conductive portion forming material layer, and thereafter, the exposure process and the developing process are performed on the conductive portion forming material layer. Forming a conductive portion on a pad electrode of a semiconductor element or a carrier material.