JPH038213A - Manufacture of anisotropic conductive film - Google Patents
Manufacture of anisotropic conductive filmInfo
- Publication number
- JPH038213A JPH038213A JP14027789A JP14027789A JPH038213A JP H038213 A JPH038213 A JP H038213A JP 14027789 A JP14027789 A JP 14027789A JP 14027789 A JP14027789 A JP 14027789A JP H038213 A JPH038213 A JP H038213A
- Authority
- JP
- Japan
- Prior art keywords
- conductive particles
- anisotropic conductive
- film
- conductive film
- photosensitive drum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000002245 particle Substances 0.000 claims abstract description 40
- 229920005989 resin Polymers 0.000 claims abstract description 16
- 239000011347 resin Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000012188 paraffin wax Substances 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
Landscapes
- Non-Insulated Conductors (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、異方性導電膜の製造方法に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a method for manufacturing an anisotropic conductive film.
従来の異方性導電膜は、粘性を持たした樹脂中に、導電
粒子を混入した後、導電粒子を混入した樹脂をかくはん
し、導電粒子を分散させ後、樹脂の粘度を上昇させ、フ
ィルム状に加工して製造していた。Conventional anisotropic conductive films are made by mixing conductive particles into a viscous resin, then stirring the resin mixed with the conductive particles to disperse the conductive particles, increasing the viscosity of the resin, and forming a film. It was processed and manufactured.
第6図に従来の異方性導電膜を用いた実装部の断面図を
示す。FIG. 6 shows a cross-sectional view of a mounting section using a conventional anisotropic conductive film.
従来の方法ではフィルムの全面に導電粒子を混在させる
事しかできず、異方性導電膜を介して一対の電極を電気
的に接続する場合、第6図に示す様に、片方の電極19
が絶縁物20に対し四部に位置していると、絶縁物間の
導電粒子4が障害となり電極19間の接続が困難になる
という問題点を有する。また第6図の状態よりさらに圧
ツノを加える事により導電粒子4を介し、電極間の電気
的接続を得る事は可能となるが、圧力のかけすぎによる
絶縁物や導電粒子の破壊等により、接続の信頼性が低下
するという問題点を有する。In the conventional method, it is only possible to mix conductive particles over the entire surface of the film, and when a pair of electrodes are electrically connected through an anisotropic conductive film, as shown in FIG.
If the conductive particles 4 between the insulators 20 are located at four parts, there is a problem in that the conductive particles 4 between the insulators become an obstacle, making it difficult to connect between the electrodes 19. Moreover, by applying pressure horns even further than the state shown in FIG. 6, it is possible to obtain electrical connection between the electrodes via the conductive particles 4, but due to the destruction of the insulators and conductive particles due to excessive pressure, This has the problem that the reliability of the connection decreases.
また電極19が絶縁物20に対し凹状に位置していない
電極間の接続においても、異方性導電膜製造時に生ずる
複数の導電粒子のかたまりにより、接続電極ピッチをせ
ばめてゆくと、隣接電極間でショートを起こしてしまう
という問題点を有していた。Furthermore, even in connection between electrodes where the electrode 19 is not located in a concave shape with respect to the insulator 20, when the connection electrode pitch is narrowed due to a plurality of conductive particles agglomerated during the production of the anisotropic conductive film, the distance between adjacent electrodes is reduced. This has the problem of causing a short circuit.
そこで、本発明は上記問題点を解決するためになされた
ものであり、その目的とするところは、接続信頼性の高
い異方性導電膜の製造方法を提1iすることにある。Therefore, the present invention has been made to solve the above problems, and its purpose is to provide a method for manufacturing an anisotropic conductive film with high connection reliability.
本発明の異方性導電膜は
(a)感光ドラムの一部もしくは、全面を光により帯電
させる工程と、
(b)帯電させた感光ドラム上のみに導電粒子を吸着さ
せる工程と、
(C)感光ドラム上の導電粒子を樹脂フィルム上へ転写
させる工程
とを有する事を特徴とする。The anisotropic conductive film of the present invention includes (a) a step of charging a part or the entire surface of a photosensitive drum with light; (b) a step of adsorbing conductive particles only on the charged photosensitive drum; (C) The method is characterized by comprising a step of transferring conductive particles on a photosensitive drum onto a resin film.
実施例1
以下に300 tt mピッチのパッド配置を持つAg
パッドICと、ガラス上にニッケル電極を形成した基板
との接続に、本発明による異方性導電膜を用いた例を製
造工程を含めて詳述する。Example 1 Ag with a pad arrangement of 300 tt m pitch as follows:
An example in which an anisotropic conductive film according to the present invention is used for connection between a pad IC and a substrate having a nickel electrode formed on glass will be described in detail, including the manufacturing process.
第1図(a)〜(d)に異方性導電膜の製造工程を示す
。まず感光ドラム1上にバターニングされた光2を照射
して、光を照射された感光ドラム上1のみに帯電部3を
形成する(第1図(a)。)本実施例では、レーザービ
ームをAΩバッドの配置に合わせ300μmピッチで照
明した。FIGS. 1(a) to 1(d) show the manufacturing process of an anisotropic conductive film. First, a patterned light 2 is irradiated onto the photosensitive drum 1, and a charged portion 3 is formed only on the irradiated photosensitive drum 1 (FIG. 1(a)). was illuminated at a pitch of 300 μm in accordance with the arrangement of the AΩ pads.
次に、導電粒子4を感光ドラム1の下に配置し、ドラム
を回転させる事により、ドラム上の帯電した部分のみに
導電粒子4を吸着させる(第1図b)。なお、本実施例
では導電粒子4として、10μmφの樹脂ボール表面に
ニッケルメッキを行った物を用いた。Next, by placing the conductive particles 4 under the photosensitive drum 1 and rotating the drum, the conductive particles 4 are attracted only to the charged portions of the drum (FIG. 1b). In this example, as the conductive particles 4, nickel-plated resin balls having a diameter of 10 μm were used.
次に、ある程度タック性を有した樹脂フィルム5を回転
する感光ドラム1の下に通す事により、感光ドラム1上
の導電粒子4を樹脂フィルム5上へ転写させた(第1図
C)。Next, the conductive particles 4 on the photosensitive drum 1 were transferred onto the resin film 5 by passing a resin film 5 having some tackiness under the rotating photosensitive drum 1 (FIG. 1C).
本実施例では、樹脂フィルム5として10μm厚の熱可
塑性樹脂を用いた。また、樹脂フィルム5と、感光ドラ
ム1のギャップを5μmとし樹脂フィルム中に導電粒子
が半分埋まる様にした。In this example, a thermoplastic resin having a thickness of 10 μm was used as the resin film 5. Further, the gap between the resin film 5 and the photosensitive drum 1 was set to 5 μm so that half of the conductive particles were buried in the resin film.
以上の工程により製造した異方性導電膜により導電粒子
をアルミパッドの位置に対応させて配置する事ができた
。(第1図(d))
第2図は、ガラムロ上にニッケル電極7を形成した基板
と、アルミパッド8を有するIC9とを異方性導電膜を
介し熱圧着により接続した、実施例1の断面図である。Using the anisotropic conductive film produced through the above steps, conductive particles could be arranged in correspondence with the positions of the aluminum pads. (FIG. 1(d)) FIG. 2 shows Example 1, in which a substrate with a nickel electrode 7 formed on galamuro and an IC 9 having an aluminum pad 8 are connected by thermocompression bonding via an anisotropic conductive film. FIG.
アルミパッドを有するICの場合、パシベーション膜1
0に比較して、パッド部が凹型となっているが、パッド
に対応した部分にのみ、導電粒子4を配置する、本実施
例による異方性導電膜を用いる事により、信頼性の高い
接続を得る事ができた。For ICs with aluminum pads, passivation film 1
Although the pad part is concave compared to 0, by using the anisotropic conductive film according to this example in which the conductive particles 4 are arranged only in the part corresponding to the pad, a highly reliable connection can be achieved. I was able to obtain
実施例2 第3図は、本発明の実施例2を示す。Example 2 FIG. 3 shows a second embodiment of the invention.
80μmピッチで配列された金バンブ11を持つIC9
と、金バンプに対応してバターニングされた銅電極12
を持つセラミック基板13とを接続した。IC9 with gold bumps 11 arranged at a pitch of 80 μm
and a copper electrode 12 patterned to correspond to the gold bump.
It was connected to a ceramic substrate 13 having a.
本実施例による異方性導電膜を用いる事により、金バン
ブ間の導電粒子をなくす事ができ、バンブ間のショート
なしに80μmピッチの接続を行う事ができた。By using the anisotropic conductive film according to this example, conductive particles between the gold bumps could be eliminated, and connections at a pitch of 80 μm could be made without shorting between the bumps.
異方性導電膜の製造方法は、感光ドラムへの光の照射方
式をレーザービーム方式より、液晶シャッタ一方式とし
た以外は、実施例1と同様である。The method for producing the anisotropic conductive film was the same as in Example 1, except that the light irradiation method to the photosensitive drum was changed to a liquid crystal shutter method instead of a laser beam method.
実施例3 第4図は、本発明の実施例3を示す。Example 3 FIG. 4 shows a third embodiment of the present invention.
ガラス6上に150μmピッチ、パターン幅75μmで
透明電極14をバターニングした基板と、ポリイミドテ
ープ15上に150μmピッチ、パターン幅75μmで
、銅電極をバターニングしたフレキシブルテープとを、
25μm角の導電粒子の領域を50μmピッチで全面に
バターニングした異方性導電膜を用い、熱圧着により接
続した。A substrate with transparent electrodes 14 patterned on a glass 6 at a pitch of 150 μm and a pattern width of 75 μm, and a flexible tape with copper electrodes patterned on a polyimide tape 15 with a pitch of 150 μm and a pattern width of 75 μm,
Connections were made by thermocompression bonding using an anisotropic conductive film in which 25 μm square regions of conductive particles were patterned over the entire surface at a pitch of 50 μm.
以上の方法では、導電粒子の領域幅25μmに対し、電
極間ギャップが75μmと十分に太きいため、異方性導
電膜を位置合せする事なく、150μmピッチの細密接
続が可能となった。In the above method, since the inter-electrode gap is sufficiently large at 75 μm for the region width of the conductive particles of 25 μm, fine connections at a pitch of 150 μm are possible without aligning the anisotropic conductive film.
本実施例において、感光ドラムへの光の照射にLEDア
レイを用い、導電粒子として10μmφのニッケル粒子
を用いた。また樹脂フィルムとして熱硬化性樹脂を用い
たため接続部の信頼性が向上した。In this example, an LED array was used to irradiate the photosensitive drum with light, and nickel particles with a diameter of 10 μm were used as the conductive particles. Furthermore, since a thermosetting resin was used as the resin film, the reliability of the connection part was improved.
実施例4 第5図に、本発明の実施例4を示す。Example 4 Embodiment 4 of the present invention is shown in FIG.
ICのアルミパッドピッチの2倍の縮尺で製作したマス
クを1/2に縮少投影して、感光ドラムを帯電させた後
、20μmφの銅粒子をドラム上に吸着させ40μm厚
のパラフィンフィルムに銅粒子を転写した。この様にし
て製作した異方性導電膜を、アルミパッド仕様のICと
、パッド位置に対応した部分に銅電極12を持つガラス
エポキシ基板16の間に導電粒子位置を電極位置に合わ
せて配置した。A mask made at twice the scale of the aluminum pad pitch of the IC is scaled down to 1/2, and a photosensitive drum is charged. Copper particles of 20 μmφ are adsorbed onto the drum and deposited on a 40 μm thick paraffin film. The particles were transferred. The anisotropic conductive film produced in this manner was placed between an IC with an aluminum pad specification and a glass epoxy substrate 16 having a copper electrode 12 at a portion corresponding to the pad position, with the conductive particle position matching the electrode position. .
次にガラスエポキシ基板とICをバネ17を用いて圧着
させ全体をパラフィンの融解温度まで熱し、パラフィン
をとかし導電粒子のみを露出させ、アルミパッドと銅電
極の接続を得た。Next, the glass epoxy substrate and the IC were pressed together using springs 17, and the whole was heated to the melting temperature of paraffin, and the paraffin was melted to expose only the conductive particles, thereby establishing a connection between the aluminum pad and the copper electrode.
この方式により、四部に電極を有するアルミパッドIC
の接続を行う事ができた。With this method, an aluminum pad IC with electrodes on four parts
I was able to make the connection.
以上の様に、本発明によれば、電極が凹部に位置する電
極間の接続が容易に行え、また異方性導電膜内の導電粒
子のかたまりの成牛がなく、細密接続ピッチの実装が可
能となる異方性導電膜を製造する事ができる。As described above, according to the present invention, it is possible to easily connect between electrodes located in recessed portions, there is no formation of a mass of conductive particles in the anisotropic conductive film, and it is possible to implement a fine connection pitch. It is possible to manufacture an anisotropic conductive film.
また、導通不要な部分には、導電粒子を配置する必要が
なくなるため、導電粒子の使用量を削減する事ができる
。Furthermore, since it is no longer necessary to arrange conductive particles in areas where conduction is not required, the amount of conductive particles used can be reduced.
さらに感光ドラムを帯電させる方式をとっているため量
産性にすぐれ、液晶シャッター、LEDアレイ、レーザ
ービーム等感光ドラムの帯電方式が電子化されている場
合、導電粒子の配置のパターン変更が、きわめて容易に
、すみやかに行う事ができるという利点を有する。Furthermore, since the method uses a method of charging the photosensitive drum, mass production is excellent, and if the charging method of the photosensitive drum is electronic, such as with a liquid crystal shutter, LED array, or laser beam, it is extremely easy to change the pattern of the conductive particle arrangement. It has the advantage that it can be done quickly.
第1図(a)〜(d)は本発明の異方性導電膜の製造方
法を示す図。
第2図は、本発明の実施例1を示す図。
第3図は、本発明の実施例2を示す図。
第4図は、本発明の実施例3を示す図。
第5図は、本発明の実施例4を示す図。
第6図は、従来の異方性導電膜を用いた実装部の断面図
。
・・感光ドラム
・・光
・・帯電部
・・導電粒子
・−樹脂フィルム
・・ガラス
・−ニッケル電極
・・アルミパッド
φ・IC
・・パシベーション膜
11 ・
12 ・
] 3 ・
14 ・
15 ・
16 ・
17 ・
18 ・
19 ・
20 ・
金バンブ
銅電極
セラミック基板
透明電極
ポリイミドテープ
ガラスエポキシ基板
バネ
パラフィン
電極
絶縁物
以上FIGS. 1(a) to 1(d) are diagrams showing the method for manufacturing an anisotropic conductive film of the present invention. FIG. 2 is a diagram showing Embodiment 1 of the present invention. FIG. 3 is a diagram showing a second embodiment of the present invention. FIG. 4 is a diagram showing a third embodiment of the present invention. FIG. 5 is a diagram showing a fourth embodiment of the present invention. FIG. 6 is a cross-sectional view of a mounting section using a conventional anisotropic conductive film.・・Photosensitive drum・・Light・・Charging part・・Conductive particles・・Resin film・・・Glass・・Nickel electrode・・Aluminum pad φ・IC・・Passivation film 11 ・ 12 ・ ] 3 ・ 14 ・ 15 ・ 16 ・17 ・ 18 ・ 19 ・ 20 ・ Gold bump copper electrode ceramic substrate transparent electrode polyimide tape glass epoxy substrate spring paraffin electrode insulator or higher
Claims (1)
せる工程と、 (b)帯電させた感光ドラム上のみに導電粒子を吸着さ
せる工程と、 (c)感光ドラム上の導電粒子を樹脂フィルム上へ転写
させる工程 とを有する事を特徴とする異方性導電膜の製造方法。[Claims] (a) A step of charging a part or the entire surface of the photosensitive drum with light; (b) A step of adsorbing conductive particles only on the charged photosensitive drum; (c) A step of adsorbing conductive particles on the photosensitive drum. 1. A method for producing an anisotropic conductive film, comprising the step of transferring conductive particles onto a resin film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14027789A JPH038213A (en) | 1989-06-02 | 1989-06-02 | Manufacture of anisotropic conductive film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14027789A JPH038213A (en) | 1989-06-02 | 1989-06-02 | Manufacture of anisotropic conductive film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH038213A true JPH038213A (en) | 1991-01-16 |
Family
ID=15265035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14027789A Pending JPH038213A (en) | 1989-06-02 | 1989-06-02 | Manufacture of anisotropic conductive film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH038213A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5739072A (en) * | 1989-03-10 | 1998-04-14 | Thiele Kaolin Company | Process for improving the physical and catalytic properties of a fluid cracking catalyst |
US5866496A (en) * | 1989-03-10 | 1999-02-02 | Thiele Kaolin Company | Cracking catalyst and process for preparing same |
US5925327A (en) * | 1989-03-10 | 1999-07-20 | Thiele Kaolin Company | Process for improving the physical properties of formed particles |
JP2005064494A (en) * | 2003-07-30 | 2005-03-10 | Kyocera Corp | Method for manufacturing electronic component |
AT14199U1 (en) * | 2013-03-12 | 2015-05-15 | Engel Austria Gmbh | mold |
-
1989
- 1989-06-02 JP JP14027789A patent/JPH038213A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5739072A (en) * | 1989-03-10 | 1998-04-14 | Thiele Kaolin Company | Process for improving the physical and catalytic properties of a fluid cracking catalyst |
US5866496A (en) * | 1989-03-10 | 1999-02-02 | Thiele Kaolin Company | Cracking catalyst and process for preparing same |
US5925327A (en) * | 1989-03-10 | 1999-07-20 | Thiele Kaolin Company | Process for improving the physical properties of formed particles |
JP2005064494A (en) * | 2003-07-30 | 2005-03-10 | Kyocera Corp | Method for manufacturing electronic component |
JP4574269B2 (en) * | 2003-07-30 | 2010-11-04 | 京セラ株式会社 | Manufacturing method of electronic parts |
AT14199U1 (en) * | 2013-03-12 | 2015-05-15 | Engel Austria Gmbh | mold |
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