JP2805948B2 - Connection structure of IC chip - Google Patents

Connection structure of IC chip

Info

Publication number
JP2805948B2
JP2805948B2 JP2009780A JP978090A JP2805948B2 JP 2805948 B2 JP2805948 B2 JP 2805948B2 JP 2009780 A JP2009780 A JP 2009780A JP 978090 A JP978090 A JP 978090A JP 2805948 B2 JP2805948 B2 JP 2805948B2
Authority
JP
Japan
Prior art keywords
fine particles
chip
conductive
connection
bump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2009780A
Other languages
Japanese (ja)
Other versions
JPH03214749A (en
Inventor
和弘 杉山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=11729756&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP2805948(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Priority to JP2009780A priority Critical patent/JP2805948B2/en
Priority to US07/602,715 priority patent/US5123986A/en
Priority to US07/713,822 priority patent/US5180888A/en
Publication of JPH03214749A publication Critical patent/JPH03214749A/en
Application granted granted Critical
Publication of JP2805948B2 publication Critical patent/JP2805948B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29399Coating material

Landscapes

  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Description

【発明の詳細な説明】 [産業上の利用分野] この発明はICチップの接続構造に関する。The present invention relates to an IC chip connection structure.

[従来の技術] ICチップを基板に接続する最も一般的な方法として、
半田付けによる方法がある。近年、ICチップは集積度の
向上に伴ってバンプ部のピッチも微細化されており、こ
の要求に即応して、半田付け方法も随分と進歩してい
る。最新の設備と細心の注意力をもってすれば、半田付
けは200μm程度のピッチの接続に適用することが可能
である。この半田付けによる接続構造では、ICチップと
基板の間に封止樹脂を充填して、バンプ部と接続端子の
接合部分の保護および接合後の接合強度を確保する必要
がある。しかし、ICチップと基板間の隙間は、バンプ部
の突出量(約20〜30μm)程度で極僅かであるから、封
止樹脂を流し込む際に気泡等が混入し、確実に封止樹脂
を充填することができないという問題がある。
[Prior art] As the most common method of connecting an IC chip to a substrate,
There is a method by soldering. In recent years, the pitch of the bump portion has been reduced in accordance with the improvement in the integration degree of the IC chip, and the soldering method has been considerably advanced in response to this demand. With the latest equipment and careful attention, soldering can be applied to connections with a pitch of about 200 μm. In this connection structure by soldering, it is necessary to fill a sealing resin between the IC chip and the substrate to protect the joint portion between the bump portion and the connection terminal and ensure the joint strength after the joint. However, since the gap between the IC chip and the substrate is very small with the amount of protrusion of the bump (about 20 to 30 μm), bubbles are mixed in when the sealing resin is poured, and the sealing resin is reliably filled. There is a problem that you can not.

そこで、従来では、ICチップと基板を異方導電性接着
剤を用いて接続する方法が検討されている。異方導電性
接着剤とは、絶縁性接着剤中に導電性微粒子を分散混合
したものである。この異方導電性接着剤を用いてICチッ
プを基板に接続する際、異方導電性接着剤は基板の接続
端子上のみでなく接続端子間の基板上にも被着される。
そして、基板の接続端子とICチップのバンプ部を異方導
電性接着剤を介在して熱圧着すると、基板の接続端子と
ICチップのバンプ部との間に介在された絶縁性接着剤お
よび各導電性微粒子は接続端子間に流動し、基板の接続
端子とICチップのバンプ部は導電性微粒子に直接接触す
る。この際、各導電性微粒子が互いに導通しないように
充分に離間して分散されていれば、隣接する接続端子ま
たは隣接するバンプ部は短絡することはない。すなわ
ち、異方導電性接着剤とは、接合状態において厚み方向
には導電性を有するが、面方向には絶縁性を呈するもの
であり、導電性に方向性を有する接着剤ということであ
る。したがって、この異方導電性接着剤を用いた接続構
造では、異方導電性接着剤を基板の接続端子上に被着す
る際に、位置合わせが必要でないので能率的に接続がで
き、また接続端子間にも絶縁性接着剤が介在されるた
め、接合後に封止樹脂を充填しなくても、接合強度を確
保することができる。
Therefore, conventionally, a method of connecting an IC chip and a substrate using an anisotropic conductive adhesive has been studied. The anisotropic conductive adhesive is obtained by dispersing and mixing conductive fine particles in an insulating adhesive. When connecting an IC chip to a substrate using this anisotropic conductive adhesive, the anisotropic conductive adhesive is applied not only on the connection terminals of the substrate but also on the substrate between the connection terminals.
Then, when the connection terminals of the substrate and the bumps of the IC chip are thermocompression-bonded with an anisotropic conductive adhesive therebetween, the connection terminals of the substrate are
The insulating adhesive and the conductive fine particles interposed between the bumps of the IC chip flow between the connection terminals, and the connection terminals of the substrate and the bumps of the IC chip directly contact the conductive fine particles. At this time, as long as the conductive fine particles are sufficiently separated and dispersed so as not to conduct with each other, adjacent connection terminals or adjacent bump portions will not be short-circuited. In other words, the anisotropic conductive adhesive has conductivity in the thickness direction in the joined state, but exhibits insulating properties in the plane direction, and is an adhesive having a directional conductivity. Therefore, in the connection structure using the anisotropic conductive adhesive, when the anisotropic conductive adhesive is applied on the connection terminals of the substrate, no alignment is required, so that the connection can be efficiently performed, and the connection can be performed efficiently. Since the insulating adhesive is interposed between the terminals, the bonding strength can be secured without filling the sealing resin after the bonding.

[発明が解決しようとする課題] 上述した異方導電性接着剤を用いたICチップの接続構
造では、異方導電性接着剤が厚さ方向に導電性を有し、
面方向に絶縁性を呈することが絶対的条件である。厚さ
方向に導電性を有するためには、基板の接続端子とICチ
ップのバンプ部との間に最低(単に理論的には)、一個
の導電性微粒子が介在される必要がある。面方向に絶縁
性を呈するためには、どの導電性微粒子も隣接する導電
性微粒子とは絶縁性接着剤により電気的に不導通となる
間隔に隔てられていることが理想である。隣接する導電
性微粒子が、たまたま隣の接続端子または隣のバンプ部
と絶縁されていると仮定すれば、その条件においての
み、導電性微粒子同士が導通することが許容される。し
かし、このような導電性微粒子が隣の接続端子またはバ
ンプ部から絶縁されているという保証はない。それ故、
どの導電性微粒子も隣接する導電性微粒子とは導通する
ことがないような構造にする必要がある。
[Problems to be Solved by the Invention] In the connection structure of the IC chip using the anisotropic conductive adhesive described above, the anisotropic conductive adhesive has conductivity in the thickness direction,
It is an absolute condition to exhibit insulation in the plane direction. In order to have conductivity in the thickness direction, at least one (only theoretically) one conductive fine particle needs to be interposed between the connection terminal of the substrate and the bump portion of the IC chip. In order to exhibit insulating properties in the plane direction, it is ideal that each conductive fine particle is separated from an adjacent conductive fine particle by an insulating adhesive so as to be electrically disconnected. Assuming that the adjacent conductive fine particles happen to be insulated from the adjacent connection terminal or the adjacent bump portion, conduction between the conductive fine particles is allowed only under that condition. However, there is no guarantee that such conductive fine particles are insulated from adjacent connection terminals or bumps. Therefore,
It is necessary that any conductive fine particles have a structure that does not conduct with adjacent conductive fine particles.

しかしながら、異方導電性接着剤において、絶縁性接
着剤中に分散される導電性微粒子の間隔は、単に攪拌に
よってのみ決定される。そのため、導電性微粒子の分布
は、当然のことながら、一様ではなく、密の部分と疎の
部分を有している。したがって、密の部分においても導
電性微粒子が相互に導通しないこと、および疎の部分に
おいても必ず1つの接続端子または1つのバンプ部に対
して1以上の導電性微粒子が位置付けられなければなら
ない、という条件が生じる。
However, in the anisotropic conductive adhesive, the distance between the conductive fine particles dispersed in the insulating adhesive is determined only by stirring. Therefore, the distribution of the conductive fine particles is, of course, not uniform and has a dense portion and a sparse portion. Therefore, the conductive fine particles do not conduct with each other even in a dense part, and one or more conductive fine particles must be positioned for one connection terminal or one bump part even in a sparse part. Conditions arise.

接続端子およびバンプ部の微細ピッチ化に伴い、接続
端子およびバンプ部の幅が狭くなるに比例して、上述し
た条件を満足することは困難になる。1つの接続端子と
バンプ部の間に位置する導電性微粒子は、接続端子およ
びバンプ部が幅狭になるにつれ少数となる。これを避け
るために、接続端子とバンプ部の間に位置する導電性微
粒子の数の増大を図って、絶縁性接着剤中に混合する導
電性微粒子の割合を増やせば、密の部分の導電性微粒子
の密度がさらに増大する。これは、言うまでもなく、導
電性微粒子の密の部分は幅狭の接続端子間を満たし回路
を短絡させる。
With the fine pitch of the connection terminals and the bumps, it becomes difficult to satisfy the above-described conditions in proportion to the narrowing of the widths of the connection terminals and the bumps. The number of conductive fine particles located between one connection terminal and the bump portion decreases as the connection terminal and the bump portion become narrower. In order to avoid this, by increasing the number of conductive fine particles located between the connection terminal and the bump portion and increasing the ratio of the conductive fine particles mixed in the insulating adhesive, the conductivity of dense portions can be improved. The density of the fine particles is further increased. This, needless to say, the dense portion of the conductive fine particles fills between the narrow connection terminals and short-circuits the circuit.

このような構造および作用のため、異方導電性接着剤
によるICチップの接続構造では、接続端子およびバンプ
部のピッチが導電性微粒子の直径の数倍程度の場合にま
で適用可能であるとみられているにもかかわらず、現実
的には、これとは程遠いものであった。一例として、直
径10〜20μm程度の導電性微粒子を用いた場合、接続端
子のピッチは200〜300μmとすることが限界であった。
この接続構造による限り、理論的にも、接続端子または
バンプ部のピッチが導電性微粒子の直径よりも小さい場
合には適用が不可能である。
Because of this structure and function, the connection structure of the IC chip using an anisotropic conductive adhesive can be applied to the case where the pitch of the connection terminals and bumps is about several times the diameter of the conductive fine particles. Nevertheless, in reality, this was far from it. As an example, when conductive fine particles having a diameter of about 10 to 20 μm are used, the limit of the connection terminal pitch is 200 to 300 μm.
As far as this connection structure is concerned, the application is theoretically impossible when the pitch of the connection terminals or bumps is smaller than the diameter of the conductive fine particles.

この発明は上述した事情に鑑みてなされたものであ
り、その目的とするところは、バンプ部および接続端子
のピッチが従来よりも遥かに微小の場合にも適用でき、
かつ接続信頼性に優れ、充分な接合強度を確保できるIC
チップの接続構造を提供することである。
The present invention has been made in view of the above-described circumstances, and an object thereof is applicable to a case where the pitch of the bump portion and the connection terminal is much smaller than before.
IC with excellent connection reliability and sufficient bonding strength
An object of the present invention is to provide a chip connection structure.

[課題を解決するための手段] この発明の手段は次の通りである。[Means for Solving the Problems] The means of the present invention are as follows.

導電性微粒子の外周面を絶縁性の多数の微粉末を用い
て構成された樹脂層で覆った接続用微粒子を絶縁性接着
剤中に混合して導電用結合剤を形成し、この導電用結合
剤をICチップと基板の間に介在させて、前記ICチップの
各バンプ部と前記基板の各接続端子を熱圧着することに
より、前記バンプ部と前記接続端子の間に位置する前記
接続用微粒子の樹脂層の厚み方向の部分が破壊され、か
つ面方向の部分が残存し、前記接続用微粒子の導電性微
粒子で前記ICチップの各バンプ部と前記基板の各接続端
子を接続することである。
The fine particles for connection, in which the outer peripheral surface of the fine conductive particles is covered with a resin layer composed of a large number of insulating fine powders, are mixed in an insulating adhesive to form a conductive binder. An agent is interposed between the IC chip and the substrate, and each bump portion of the IC chip and each connection terminal of the substrate are thermocompression-bonded, so that the connection fine particles located between the bump portion and the connection terminal A portion in the thickness direction of the resin layer is destroyed, and a portion in the plane direction remains, and the conductive fine particles of the connection fine particles connect each bump portion of the IC chip to each connection terminal of the substrate. .

[作用] この発明の作用は次の通りである。[Operation] The operation of the present invention is as follows.

導電用結合剤の接続用微粒子は導電性微粒子の外周面
が絶縁性の多数の微粉末を用いて構成された樹脂層で覆
われているから、絶縁性接着剤中に高密度で混入して
も、相互に導通することがない。しかも、この接続用微
粒子は熱圧着により樹脂層の厚み方向の部分が破壊さ
れ、面方向の部分が残存するので、ICチップのバンプ部
と基板の接続端子の接合状態において、隣接する接続用
微粒子同士が接触しても、導電性微粒子が相互に導通す
ることはない。したがって、この導電用結合剤を用いた
接続構造では、バンプ部および接続端子のピッチが従来
よりも遥かに微細であっても、隣接するバンプ部または
接続端子を短絡することなく、バンプ部と接続端子を確
実に接続することができ、接続信頼性が極めて高い。し
かも、ICチップと基板は絶縁性接着剤により接着される
ので、封止樹脂等を充填しなくても、充分な接合強度が
確保できる。
The fine particles for connection of the conductive binder are mixed at a high density into the insulating adhesive because the outer peripheral surface of the conductive fine particles is covered with a resin layer composed of a large number of insulating fine powders. Also do not conduct with each other. In addition, since the connection fine particles are broken in the thickness direction of the resin layer by thermocompression bonding and the surface direction portions remain, the adjacent connection fine particles in the bonding state of the bump portion of the IC chip and the connection terminal of the substrate are removed. Even if they come into contact with each other, the conductive fine particles do not conduct with each other. Therefore, in the connection structure using the conductive bonding agent, even if the pitch between the bumps and the connection terminals is much finer than before, the connection between the bumps and the connection terminals can be made without short-circuiting the adjacent bumps or connection terminals. Terminals can be securely connected, and connection reliability is extremely high. In addition, since the IC chip and the substrate are bonded with an insulating adhesive, sufficient bonding strength can be secured without filling with a sealing resin or the like.

[実施例] 以下、図面を参照して、この発明の実施例を説明す
る。
Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

第1図はICチップを液晶表示パネルに接続した接続構
造を示す。液晶表示パネル1は上下一対のガラス基板
2、3の対向面にITO(Indium Tin Oxide)等よりなる
透明電極4、5が形成され、その間の周囲に封止材6が
設けられ、その内部に液晶7が封入された構造となって
いる。この場合、上下のガラス基板2、3のうち、下側
のガラス基板3は上側のガラス基板2よりも大きく形成
され、上側のガラス基板2の右側方へ突出して設けられ
ている。この下側のガラス基板3の突出した部分の上面
にはその幅方向のほぼ全域に亘って接続端子8が配列形
成されている。この接続端子8は透明電極4、5と同じ
材料よりなり、それぞれが各透明電極4、5に接続され
ている。なお、接続端子8の一部は単にガラス基板3の
右端側に延設されている。ICチップ9は各透明電極4、
5に駆動信号を供給するものであり、下面には多数のバ
ンプ部10(図では2個のみを示すが、実際には多数あ
る)が所定間隔に配列されている。この場合、バンプ部
10は下面からストレートに突出するストレートバンプに
形成されており、その下端面は平坦面に形成されてい
る。そして、ICチップ9と液晶表示パネル1は、導電用
結合剤11によりICチップ9の各バンプ部10と液晶表示パ
ネル1の各接続端子8が接続されている。
FIG. 1 shows a connection structure in which an IC chip is connected to a liquid crystal display panel. In the liquid crystal display panel 1, transparent electrodes 4 and 5 made of ITO (Indium Tin Oxide) or the like are formed on opposing surfaces of a pair of upper and lower glass substrates 2 and 3, and a sealing material 6 is provided between the transparent electrodes. The liquid crystal 7 is sealed. In this case, of the upper and lower glass substrates 2, 3, the lower glass substrate 3 is formed larger than the upper glass substrate 2, and is provided to protrude rightward of the upper glass substrate 2. On the upper surface of the protruding portion of the lower glass substrate 3, connection terminals 8 are arranged and formed over almost the entire area in the width direction. The connection terminals 8 are made of the same material as the transparent electrodes 4 and 5, and are connected to the transparent electrodes 4 and 5, respectively. In addition, a part of the connection terminal 8 is simply extended to the right end side of the glass substrate 3. IC chip 9 has transparent electrodes 4
A drive signal is supplied to the lower surface 5, and a large number of bump portions 10 (only two are shown in the figure, but there are actually many) are arranged at predetermined intervals on the lower surface. In this case, the bump
Numeral 10 is formed as a straight bump protruding straight from the lower surface, and its lower end surface is formed as a flat surface. The bumps 10 of the IC chip 9 and the connection terminals 8 of the liquid crystal display panel 1 are connected to the IC chip 9 and the liquid crystal display panel 1 by a conductive bonding agent 11.

第2図は導電用結合剤11の構造を示す。導電用結合剤
11は、絶縁性微粒子12の表面に導電膜13を形成して導電
性微粒子を構成し、この導電性微粒子の導電膜13の外周
面を電気的に隔絶する樹脂層14で覆って接続用微粒子15
を形成し、この接続用微粒子15…を相互に接触させて平
面的に配列した状態で絶縁性接着剤16中に混合したもの
である。この場合、絶縁性微粒子12は酸化シリコン(Si
O2)、酸化チタン(TiO2)、金属酸化物、セラミック等
の無機材料、あるいはアクリル樹脂等の有機材料よりな
る粒子である。導電膜13は金、銀、銅、ニッケル、アル
ミニウム等の金属をメッキや蒸着等で被覆したものであ
る。樹脂層14は導電膜13の外周面を電気的に隔絶するた
めのもので、絶縁性を有する低融点(100〜300℃程度)
の微粉末を導電膜13の外周面に静電気で吸着させた構成
となっている。なお、微粉末は絶縁性粒子12よりも遥か
に小さなものである。このような絶縁性微粒子12の導電
膜13を樹脂層14で覆った接続用微粒子15はその径を約10
μm程度の大きさに形成することが可能である。また、
絶縁性接着剤16は熱可塑性樹脂よりなる熱溶融型に属す
るホットメルト型のものが望ましいが、これに限らず、
熱硬化性樹脂よりなるものでもよい。
FIG. 2 shows the structure of the conductive binder 11. Conductive binder
Reference numeral 11 denotes a conductive fine particle formed by forming a conductive film 13 on the surface of the insulating fine particle 12 and covering the outer peripheral surface of the conductive fine particle conductive film 13 with a resin layer 14 that electrically isolates the conductive fine particle. Fifteen
Are formed in such a manner that the connecting fine particles 15 are mixed with each other in the insulating adhesive 16 in a state of being arranged in a planar manner by being in contact with each other. In this case, the insulating fine particles 12 are made of silicon oxide (Si
The particles are made of an inorganic material such as O 2 ), titanium oxide (TiO 2 ), metal oxide, or ceramic, or an organic material such as an acrylic resin. The conductive film 13 is formed by coating a metal such as gold, silver, copper, nickel, and aluminum by plating or vapor deposition. The resin layer 14 is for electrically isolating the outer peripheral surface of the conductive film 13 and has a low melting point (about 100 to 300 ° C.) having an insulating property.
This is a configuration in which the fine powder is adsorbed on the outer peripheral surface of the conductive film 13 by static electricity. Note that the fine powder is much smaller than the insulating particles 12. The connecting fine particles 15 in which the conductive film 13 of the insulating fine particles 12 is covered with the resin layer 14 have a diameter of about 10
It can be formed to a size of about μm. Also,
The insulating adhesive 16 is preferably a hot-melt type belonging to a hot-melt type made of a thermoplastic resin, but is not limited thereto.
It may be made of a thermosetting resin.

第3図は導電用結合剤17による接続端子8とバンプ部
10の接合状態を示す。導電用結合剤17は、液晶表示パネ
ル1のガラス基板3の接続端子8とICチップ9のバンプ
部10の間に配置されて、図示しないヒータチップにより
熱圧着される。すると、絶縁性接着剤16によりガラス基
板3とICチップ9が相互に接着されるのと同時に、対向
する接続端子8とバンプ部10が接続用微粒子15により接
続される。すなわち、接続端子8とバンプ部10間に位置
する接続用微粒子15は接続端子8とバンプ部10で上下に
加圧され、かつ加熱されるので、接続端子8とバンプ部
10が接触する部分(厚さ方向の部分)の樹脂層14が溶融
して押し流され、絶縁性微粒子12の表面に設けられた導
電膜13が露出して接続端子8とバンプ部10に接触して導
通する。この場合には、バンプ部10の下端面が平坦面で
あるから、加圧時に接続用微粒子15がバンプ部10から逃
げ難い。そのため、接続用微粒子15はバンプ部10により
確実に接続端子8間で加圧される。しかし、接続端子8
とバンプ部10が接触しない部分(面方向の部分)の樹脂
層14は厚さ方向の部分に較べ加圧力が小さいため、その
まま残存する。なお、隣接する接続端子8、8またはバ
ンプ部10、10間に配置された接続用微粒子15は接続端子
8およびバンプ部10によって加圧されないので、樹脂層
14はそのまま残存する。したがって、絶縁性微粒子12の
表面に設けられた導電膜13は接続端子8とバンプ部10の
配列方向に導通することはなく、対向する接続端子8と
バンプ部10のみに接触して導通する。この結果、隣接す
る接続端子8およびバンプ部10は相互に導通することが
なく、対向する接続端子8とバンプ部10のみが確実に接
続される。この場合、仮に、対向する接続端子8とバン
プ部10のピッチが接続用微粒子15の大きさのほぼ2倍程
度でも、隣接するバンプ部10と接続端子8は短絡するこ
とがなく、対向するバンプ部10と接続端子8のみを接続
することが可能である。以下、このことについて説明す
る。
FIG. 3 shows a connection terminal 8 and a bump portion made of a conductive bonding agent 17.
10 shows the joined state. The conductive binder 17 is disposed between the connection terminal 8 of the glass substrate 3 of the liquid crystal display panel 1 and the bump portion 10 of the IC chip 9 and is thermocompression-bonded by a heater chip (not shown). Then, the glass substrate 3 and the IC chip 9 are adhered to each other by the insulating adhesive 16, and at the same time, the opposing connection terminals 8 and the bump portions 10 are connected by the connection fine particles 15. That is, the connection fine particles 15 located between the connection terminal 8 and the bump portion 10 are vertically pressed and heated by the connection terminal 8 and the bump portion 10, so that the connection terminal 8 and the bump portion 10 are heated.
The resin layer 14 at the portion where the layer 10 comes into contact (the section in the thickness direction) is melted and washed away, and the conductive film 13 provided on the surface of the insulating fine particles 12 is exposed to contact the connection terminal 8 and the bump section 10. To conduct. In this case, since the lower end surface of the bump portion 10 is a flat surface, the connection microparticles 15 do not easily escape from the bump portion 10 during pressurization. Therefore, the connection fine particles 15 are reliably pressed between the connection terminals 8 by the bump portions 10. However, connection terminal 8
The portion of the resin layer 14 where the bumps 10 do not contact the surface (the portion in the surface direction) has a smaller pressing force than the portion in the thickness direction, and thus remains as it is. Since the connecting fine particles 15 arranged between the adjacent connection terminals 8 and 8 or the bumps 10 and 10 are not pressed by the connection terminals 8 and the bumps 10, the resin layer
14 remains as it is. Therefore, the conductive film 13 provided on the surface of the insulating fine particles 12 does not conduct in the direction in which the connection terminals 8 and the bumps 10 are arranged, but contacts only the opposing connection terminals 8 and the bumps 10 to conduct. As a result, the adjacent connection terminals 8 and the bump portions 10 do not conduct with each other, and only the opposing connection terminals 8 and the bump portions 10 are reliably connected. In this case, even if the pitch between the opposing connection terminal 8 and the bump portion 10 is about twice the size of the fine particles 15 for connection, the adjacent bump portion 10 and the connection terminal 8 are not short-circuited, and It is possible to connect only the part 10 and the connection terminal 8. Hereinafter, this will be described.

第4図はバンプ部17と接続用微粒子15との導通関係を
示す。この図において、各接続用微粒子15の中央部に点
線で示された円形の接触領域18は熱圧着時に溶融される
樹脂層14の部分であり、従って、この領域がバンプ部17
と接続端子(ここでは図示せず)に接触する。また、二
点鎖線で示されたバンプ部17は、第1図のバンプ部10に
対応し、接続端子はバンプ部10と同じ幅で、バンプ部17
よりも長く形成されている。ここでは、バンプ部17の縦
横の長さを接続用微粒子15の外径の約2倍程度の大きさ
とし、そのピッチをバンプ部17の幅(横方向の長さ)の
ほぼ2倍程度とする。また、接続用微粒子15…は隣接の
ものと相互に接触するよう隙間なく配列されている。こ
のことはバンプ部17のピッチ方向だけでなく、長さ方向
(縦方向)においても同様である。したがって、二点鎖
線で示されたバンプ部17の領域内には約7個の接続用微
粒子15が配置される。このうち絶縁性微粒子12の導電膜
13がバンプ部17に接触するのは接触領域18内に示された
ハッチング部分内であり、実際に導電膜13が接触する接
続用微粒子15は5個である。しかも、このうちの3個は
接触領域18の全領域で接触し、他の2個は接触領域18の
一部で接触する。また、隣接するバンプ部17のピッチは
バンプ部17の幅のほぼ2倍程度であるから、その間に配
置される接続用微粒子15は上述とほぼ同じか、それ以上
になることが予想され、隣接するバンプ部17同士が相互
に導通することはない。
FIG. 4 shows the electrical connection between the bumps 17 and the connecting fine particles 15. In this figure, a circular contact region 18 indicated by a dotted line at the center of each connection fine particle 15 is a portion of the resin layer 14 that is melted during thermocompression bonding.
And a connection terminal (not shown here). The bump 17 indicated by a two-dot chain line corresponds to the bump 10 in FIG. 1, and the connection terminals have the same width as the bump 10 and have the same width.
It is formed longer. Here, the vertical and horizontal lengths of the bumps 17 are about twice the outer diameter of the connecting fine particles 15, and the pitch is about twice the width (length in the horizontal direction) of the bumps 17. . The connecting fine particles 15 are arranged without gaps so as to be in contact with adjacent ones. This is the same not only in the pitch direction of the bumps 17 but also in the length direction (vertical direction). Therefore, about seven connection fine particles 15 are arranged in the area of the bump portion 17 indicated by the two-dot chain line. Among them, conductive film of insulating fine particles 12
The contact of the bump 13 with the bump portion 17 is in the hatched portion shown in the contact region 18, and the number of the connection fine particles 15 with which the conductive film 13 actually contacts is five. Moreover, three of them make contact in the entire contact area 18 and the other two make contact in a part of the contact area 18. Further, since the pitch between the adjacent bump portions 17 is approximately twice the width of the bump portions 17, the connecting fine particles 15 disposed therebetween are expected to be substantially the same as or larger than the above. The bump portions 17 do not conduct with each other.

このように、バンプ部17の幅およびピッチを接続用微
粒子15の2倍程度で形成しても、隣接するバンプ部17を
導通させずに、接続端子と対向するバンプ部17のみを接
続することがで可能となる。実際には、バンプ部17の縦
横の幅は接続用微粒子15の2倍よりも大きいから、バン
プ部17の領域内に上述した数よりも接続用微粒子15…が
配列されることとなり、上述した接続がより一層確実な
ものとなる。例えば、バンプ部10の縦横の大きさを30×
30μmとして、接続用微粒子15の直径10μm程度なら
ば、充分な導通信頼性が得られる。しかも、バンプ部10
のピッチをバンプ部10の幅の2倍程度にしても、ピッチ
は60μm程度であり、この微細なピッチでも確実に接続
することができる。理論的には、バンプ部10のピッチ方
向の大きさが接続用微粒子15の直径以下であっても、バ
ンプ部10の長さが接続用微粒子15の直径以上であれば最
低1個以上の接続用微粒子15がバンプ部10と接続端子間
に介在されることとなり、従って、如何なる微細ピッチ
の場合にも適用することが可能である。
As described above, even if the width and pitch of the bumps 17 are about twice as large as the fine particles 15 for connection, it is necessary to connect only the bumps 17 facing the connection terminals without conducting the adjacent bumps 17. Becomes possible. Actually, since the vertical and horizontal widths of the bump portion 17 are larger than twice the connecting fine particles 15, the connecting fine particles 15 are arranged in the area of the bump portion 17 more than the above-described number. The connection is more secure. For example, the vertical and horizontal size of the bump 10 is 30 ×
If the diameter of the connecting fine particles 15 is about 10 μm, which is 30 μm, sufficient conduction reliability can be obtained. Moreover, the bump part 10
Even if the pitch is about twice the width of the bump section 10, the pitch is about 60 μm, and even this fine pitch can be reliably connected. Theoretically, even if the size of the bumps 10 in the pitch direction is equal to or less than the diameter of the connecting fine particles 15, at least one connection is required if the length of the bumps 10 is equal to or greater than the diameter of the connecting fine particles 15. The fine particles for use 15 are interposed between the bump portion 10 and the connection terminal, and therefore, can be applied to any fine pitch.

また、このようなICチップ9の接続構造では、接続用
微粒子15の絶縁性微粒子12の表面に設けられた導電膜13
を覆って電気的に隔絶する樹脂層14が低融点材料である
から、低温接合が可能である。そのため、接続端子や基
板の材料が安価なものにも適用できる。例えば、上述し
た液晶表示パネル1のガラス基板3に限らず、フィルム
基板やプリント配線基板等にも適用できる。
In such a connection structure of the IC chip 9, the conductive film 13 provided on the surface of the insulating fine particles 12 of the connecting fine particles 15 is formed.
Since the resin layer 14 that covers and electrically isolates is made of a low-melting material, low-temperature bonding is possible. Therefore, the present invention can be applied to inexpensive connection terminals and substrates. For example, the present invention can be applied not only to the glass substrate 3 of the liquid crystal display panel 1 described above but also to a film substrate, a printed wiring board, and the like.

なお、この発明は上述した実施例に限定されるもので
はない。例えば、導電用結合剤は第5図または第6図に
示すような構造であってもよい。すなわち、第5図に示
された導電用結合剤20は、金、銀、銅、ニッケル、アル
ミニウム等の金属粒子、またはカーボン粒子等で導電性
微粒子21を構成し、この導電性微粒子21の外周面を上述
と同様に、樹脂層14で覆って接続用微粒子22を形成し、
の接続用微粒子22を相互に接触させて絶縁性樹脂16中に
混合したものある。また、第6図に示された導電用結合
剤23は、絶縁性微粒子12の導電膜13の外周面に絶縁性を
有する低融点の樹脂層24を膜状にコーティングして接続
用微粒子25を構成し、この接続用微粒子25を相互に接触
させて絶縁性樹脂16中に混合したものである。このよう
な導電用結合剤20、23においても、熱圧着により厚さ方
向の樹脂層14または24が破壊されて導電性微粒子21また
は導電膜13が露出し、これと直交する面方向の樹脂層14
または24は破壊されないので、上述した導電用結合剤11
と同様の効果がある。
The present invention is not limited to the embodiment described above. For example, the conductive binder may have a structure as shown in FIG. 5 or FIG. That is, the conductive binder 20 shown in FIG. 5 forms the conductive fine particles 21 with metal particles such as gold, silver, copper, nickel, and aluminum, or carbon particles. In the same manner as described above, the connection fine particles 22 are formed by covering the surface with the resin layer 14,
Are connected to each other and mixed in the insulating resin 16. The conductive binder 23 shown in FIG. 6 is formed by coating the outer peripheral surface of the conductive film 13 of the insulating fine particles 12 with a low-melting resin layer 24 having insulating properties in the form of a film to form the connecting fine particles 25. The connecting fine particles 25 are made to contact each other and mixed in the insulating resin 16. Even in such conductive binders 20, 23, the resin layer 14 or 24 in the thickness direction is broken by thermocompression bonding to expose the conductive fine particles 21 or the conductive film 13, and the resin layer in the plane direction orthogonal to the conductive fine particles 21 or the conductive film 13 is exposed. 14
Or 24 is not destroyed, so the conductive binder 11 described above
Has the same effect as.

[発明の効果] 以上詳細に説明したように、この発明のICチップの接
続構造によれば、バンプ部および接続端子のピッチが従
来よりも遥かに小さい場合にも充分に適用できる。特
に、導電用結合剤の接続用微粒子は、絶縁性接着剤によ
って絶縁されている訳ではなく、接続用微粒子自体が絶
縁層を有しているものであるから隣接するバンプ部また
は接続端子の短絡を確実に防止でき、接続信頼性が極め
て高い。また、ICチップは導電用結合剤の絶縁性接着剤
により基板に接着されるので、接合後に封止樹脂を充填
しなくても、接合強度を充分に確保することができる。
[Effects of the Invention] As described in detail above, according to the connection structure of an IC chip of the present invention, the present invention can be applied sufficiently even when the pitch between the bumps and the connection terminals is much smaller than in the past. In particular, the fine particles for connection of the conductive binder are not necessarily insulated by the insulating adhesive, and the fine particles for connection themselves have an insulating layer. And the connection reliability is extremely high. In addition, since the IC chip is bonded to the substrate with the insulating adhesive of the conductive binder, the bonding strength can be sufficiently secured without filling the sealing resin after the bonding.

【図面の簡単な説明】[Brief description of the drawings]

第1図〜第4図はこの発明の一実施例を示し、第1図は
ICチップを液晶表示パネルに接続した接続構造の拡大断
面図、第2図は導電用結合剤の構造を示す拡大断面図、
第3図は導電用接着剤でICチップを接合した状態の要部
拡大断面図、第4図はバンプ部と接続用微粒子の導通状
態を説明するための平面図、第5図および第6図はそれ
ぞれ導電用結合剤の変形例を示す各断面図である。 3……ガラス基板、8……接続端子、9……ICチップ、
10、17……バンプ部、11、20、23……導電用結合剤、12
……絶縁性微粒子、13……導電膜、14、24……樹脂層、
15、22、25……接続用微粒子、16……絶縁性接着剤、21
……導電性微粒子。
1 to 4 show an embodiment of the present invention, and FIG.
FIG. 2 is an enlarged sectional view of a connection structure in which an IC chip is connected to a liquid crystal display panel; FIG. 2 is an enlarged sectional view showing a structure of a conductive binder;
FIG. 3 is an enlarged sectional view of a main part in a state where the IC chip is bonded with a conductive adhesive, FIG. 4 is a plan view for explaining a conductive state of the bump portion and the connecting fine particles, and FIGS. FIG. 4 is a cross-sectional view showing a modified example of the conductive binder. 3 ... glass substrate, 8 ... connection terminal, 9 ... IC chip,
10, 17 ... bump part, 11, 20, 23 ... conductive binder, 12
... insulating fine particles, 13 ... conductive film, 14, 24 ... resin layer,
15, 22, 25: fine particles for connection, 16: insulating adhesive, 21
... Conductive fine particles.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】一面に多数のバンプ部が設けられたICチッ
プと、このICチップの各バンプ部がそれぞれ接続される
接続端子が設けられた基板と、前記ICチップと前記基板
の間に介在され、かつ導電性微粒子の外周面を絶縁性の
多数の微粉末を用いて構成された樹脂層で覆った接続用
微粒子を絶縁性接着剤中に混合してなる導電用結合剤と
を具備し、 前記導電用結合剤を前記ICチップと前記基板の間に介在
させて前記ICチップの各バンプ部と前記基板の各接続端
子を熱圧着することにより、前記バンプ部と前記接続端
子の間に位置する前記接続用微粒子の樹脂層の厚み方向
の部分が破壊され、かつ面方向の部分が残存し、前記接
続用微粒子の導電性微粒子で前記ICチップの各バンプ部
と前記基板の各接続端子を接続することを特徴とするIC
チップの接続構造。
1. An IC chip provided with a large number of bump portions on one surface, a substrate provided with connection terminals to which each bump portion of the IC chip is connected, and an IC chip interposed between the IC chip and the substrate. And a conductive binder obtained by mixing the connecting fine particles in which an outer peripheral surface of the conductive fine particles is covered with a resin layer composed of a large number of insulating fine powders in an insulating adhesive. By interposing the conductive binder between the IC chip and the substrate and thermocompression-bonding each bump portion of the IC chip and each connection terminal of the substrate, between the bump portion and the connection terminal A portion in the thickness direction of the resin layer of the connecting fine particles located is destroyed and a portion in the surface direction remains, and the conductive fine particles of the connecting fine particles are connected to each bump portion of the IC chip and each connecting terminal of the substrate. IC characterized by connecting
Chip connection structure.
JP2009780A 1989-08-10 1990-01-19 Connection structure of IC chip Expired - Lifetime JP2805948B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009780A JP2805948B2 (en) 1990-01-19 1990-01-19 Connection structure of IC chip
US07/602,715 US5123986A (en) 1989-08-10 1990-10-24 Conductive connecting method
US07/713,822 US5180888A (en) 1989-08-10 1991-06-12 Conductive bonding agent and a conductive connecting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009780A JP2805948B2 (en) 1990-01-19 1990-01-19 Connection structure of IC chip

Publications (2)

Publication Number Publication Date
JPH03214749A JPH03214749A (en) 1991-09-19
JP2805948B2 true JP2805948B2 (en) 1998-09-30

Family

ID=11729756

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009780A Expired - Lifetime JP2805948B2 (en) 1989-08-10 1990-01-19 Connection structure of IC chip

Country Status (1)

Country Link
JP (1) JP2805948B2 (en)

Also Published As

Publication number Publication date
JPH03214749A (en) 1991-09-19

Similar Documents

Publication Publication Date Title
US5180888A (en) Conductive bonding agent and a conductive connecting method
US4999460A (en) Conductive connecting structure
JP2737647B2 (en) Anisotropic conductive adhesive and conductive connection structure using the same
KR100456064B1 (en) Anisotropic conductive film for ultra-fine pitch COG application
JP2000195584A (en) Electrical connection device and electrical connection method
US5123986A (en) Conductive connecting method
JPH0371570A (en) Binder for conduction and conductive connection structure
JPS6329729A (en) Liquid crystal cell
JPS6127089Y2 (en)
KR940001260B1 (en) Conductive connecting structure
JP2805948B2 (en) Connection structure of IC chip
JPH10199930A (en) Connection structure of electronic components and connecting method therefor
JPH0775177B2 (en) Junction structure
JP4282097B2 (en) Circuit board connection method, connection structure, and adhesive film used therefor
JPH0529386A (en) Connection structure of connecting terminal part of element to be adhered
JP3198162B2 (en) Connection method for semiconductor integrated circuit device
JP2004134653A (en) Substrate connecting structure and fabricating process of electronic parts therewith
JPS608377A (en) Anisotropically electrically-conductive adhesive
JP3149083B2 (en) Conductive binder and conductive connection structure
KR20010042822A (en) Bonding material, semiconductor device, method of manufacturing semiconductor device, circuit board and electronic device
JPH08186358A (en) Connecting structure and method of electronic part
JP2979151B2 (en) How to connect electronic components
JPH0990394A (en) Method for connecting external wiring of liquid crystal display panel
JPH05174618A (en) Binder for conduction and conductive connection structure
JPS60140791A (en) Circuit board