JPH0529386A - Connection structure of connecting terminal part of element to be adhered - Google Patents

Connection structure of connecting terminal part of element to be adhered

Info

Publication number
JPH0529386A
JPH0529386A JP3181139A JP18113991A JPH0529386A JP H0529386 A JPH0529386 A JP H0529386A JP 3181139 A JP3181139 A JP 3181139A JP 18113991 A JP18113991 A JP 18113991A JP H0529386 A JPH0529386 A JP H0529386A
Authority
JP
Japan
Prior art keywords
connection terminal
conductive particles
terminal portions
groove
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3181139A
Other languages
Japanese (ja)
Inventor
Kazuhiro Nakao
和弘 中尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP3181139A priority Critical patent/JPH0529386A/en
Publication of JPH0529386A publication Critical patent/JPH0529386A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/118—Post-treatment of the bump connector
    • H01L2224/1183—Reworking, e.g. shaping
    • H01L2224/11831—Reworking, e.g. shaping involving a chemical process, e.g. etching the bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/1301—Shape
    • H01L2224/13016—Shape in side view
    • H01L2224/13018—Shape in side view comprising protrusions or indentations
    • H01L2224/13019—Shape in side view comprising protrusions or indentations at the bonding interface of the bump connector, i.e. on the surface of the bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8134—Bonding interfaces of the bump connector
    • H01L2224/81345—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
    • H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
    • H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8336—Bonding interfaces of the semiconductor or solid state body
    • H01L2224/83365—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/921—Connecting a surface with connectors of different types
    • H01L2224/9211—Parallel connecting processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4007—Surface contacts, e.g. bumps

Abstract

PURPOSE:To provide a connecting structure of a connecting terminal which improves connecting properties of terminals to be connected, opposed to adhere two elements to be adhered by using anisotropically conductive adhesive and has high insulation between adjacent terminals to be insulated. CONSTITUTION:A groove 11 is formed at least at one connecting terminal 5a of two elements 1, 2 to be adhered in such a manner that the depth of the groove 11 is set shallower than the particle size of conductive particles 7 contained in anisotropically conductive adhesive 6.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、電子部品などの被着体
の接続構造の改良に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to improvement of a connecting structure for adherends such as electronic parts.

【０００２】[0002]

【従来の技術】図６の斜視図に示すように、たとえば液
晶表示素子（以下、ＬＣＤという）１と、大規模集積回
路（以下、ＬＳＩという）チップ３を搭載したＴＡＢ
（TapeAutomated Bonding）２とを接着する場合、前記
ＬＣＤ１上に形成され、金属酸化物から成る導電性の透
明薄膜（以下、ＩＴＯという）４とＴＡＢ２の基板１０
の表面に形成された電極５とは、図７の断面図に示すよ
うに、異方性導電接着剤６を用いて接着され、この接着
剤６中に分散された導電粒子７を介してＩＴＯ４および
ＴＡＢ側電極５の各接続端子部４ａ，５ａが電気的に接
続される。この導電粒子７は、径が３〜８μｍ程度のカ
ーボンやＮｉ等の金属が用いられる。被着体であるＬＣ
Ｄ１とＴＡＢ２とは異方性導電接着剤６中の接着材８に
よって接着力が付与される。2. Description of the Related Art As shown in the perspective view of FIG. 6, a TAB equipped with, for example, a liquid crystal display element (hereinafter referred to as LCD) 1 and a large-scale integrated circuit (hereinafter referred to as LSI) chip 3.
When bonding (Tape Automated Bonding) 2 with each other, a conductive transparent thin film (hereinafter referred to as ITO) 4 formed of a metal oxide and formed on the LCD 1 and a substrate 10 of the TAB 2.
As shown in the cross-sectional view of FIG. 7, the electrode 5 formed on the surface of the ITO is bonded by using an anisotropic conductive adhesive 6, and the ITO 4 is intercalated through the conductive particles 7 dispersed in the adhesive 6. And the connection terminal portions 4a and 5a of the TAB side electrode 5 are electrically connected. As the conductive particles 7, a metal having a diameter of about 3 to 8 μm such as carbon or Ni is used. LC that is the adherend
An adhesive force is applied to D1 and TAB2 by the adhesive 8 in the anisotropic conductive adhesive 6.

【０００３】なお、図７における参照符９は、ＴＡＢ２
を構成する基板１０上に電極５を貼合わせるための接着
層である。Reference numeral 9 in FIG. 7 indicates TAB2.
It is an adhesive layer for sticking the electrode 5 on the substrate 10 constituting the.

【０００４】[0004]

【発明が解決しようとする課題】このような２つの被着
体１，２を接着するにあたり、各被着体１，２のＩＴＯ
４や電極５がたとえば０．１ｍｍ程度の微細ピッチであ
る場合には、図８の拡大断面図に示すように、当初、１
５〜３０μｍ程度の厚みに形成された異方性導電接着剤
６が、図８における鉛直方向への圧力Ｐと加熱とによっ
て１／２以下の厚みまで圧縮される。この圧縮時に、電
極５の接続端子部５ａとＩＴＯ４の接続端子部４ａとの
間の接着材８が溶融状態となり、矢符Ａに沿ってこれら
対向する上下両接続端子部の隙間から押出されるのにと
もない導電粒子７も一緒に押出され、図８における水平
方向に隣接する接続端子部間へ移動する。このような移
動によって、電気的接続に寄与する導電粒子７は、図９
の断面図に示すように、前記対向する両接続端子部４
ａ，５ａ間でその絶対数が減少し、接続の信頼性が低下
する。In adhering such two adherends 1 and 2, such ITO of each adherend 1 and 2 is adhered.
When the electrodes 4 and the electrodes 5 have a fine pitch of, for example, about 0.1 mm, as shown in the enlarged sectional view of FIG.
The anisotropic conductive adhesive 6 having a thickness of about 5 to 30 μm is compressed to a thickness of ½ or less by the pressure P in the vertical direction in FIG. 8 and heating. At the time of this compression, the adhesive material 8 between the connection terminal portion 5a of the electrode 5 and the connection terminal portion 4a of the ITO 4 becomes in a molten state, and is extruded along the arrow A from the gap between the opposing upper and lower connection terminal portions. Along with this, the conductive particles 7 are also extruded together and move between the horizontally adjacent connecting terminal portions in FIG. By such movement, the conductive particles 7 that contribute to electrical connection are
As shown in the cross-sectional view of FIG.
The absolute number decreases between a and 5a, and the reliability of the connection decreases.

【０００５】一方、水平方向に隣接する接続端子部５
ａ，５ａ間に多くの導電粒子７が集まって水平方向に互
いに接触し、これら隣接する電極間の絶縁性能を下げる
ことにもなる。On the other hand, the connection terminal portions 5 which are horizontally adjacent to each other
Many conductive particles 7 gather between a and 5a and contact each other in the horizontal direction, which also lowers the insulating performance between these adjacent electrodes.

【０００６】このため本発明は、微細ピッチのＩＴＯや
電極が形成された被着体を加熱加圧して接着するにあた
り、対向する接続端子部間相互では接続の信頼性が高
く、かつ隣接する接続端子部間は絶縁性能の高い接続構
造を提供することを目的とする。Therefore, according to the present invention, when the adherend having the fine pitch ITO or electrodes formed thereon is heated and pressed to be bonded, the connection terminal portions facing each other have high reliability of connection and adjacent connection terminals. The purpose is to provide a connection structure with high insulation performance between terminal parts.

【０００７】[0007]

【課題を解決するための手段】上記目的を達成するため
本発明は、微細ピッチの接続端子部が形成される２つの
被着体を異方性導電接着剤を用いて接着し、対向する接
続端子部間を電気的に接続するにあたり、少なくとも一
方の被着体側の接続端子部に、前記異方性導電接着剤中
に分散される導電粒子の粒径よりも浅い深さを有する凹
溝が形成されることを特徴とする被着体の接続端子部の
接続構造である。In order to achieve the above object, the present invention is to adhere two adherends on which fine-pitch connection terminal portions are formed by using an anisotropic conductive adhesive, and connect them to each other. At the time of electrically connecting the terminal portions, at least one of the connection terminal portions on the adherend side has a groove having a depth shallower than the particle diameter of the conductive particles dispersed in the anisotropic conductive adhesive. It is a connection structure of a connection terminal portion of an adherend that is formed.

【０００８】[0008]

【作用】本発明に従えば、２つの被着体が異方性導電接
着剤を用いて接着されるにあたり、これら被着体が加熱
加圧されることによって、異方性導電接着剤中の接着材
は溶融状態となって各被着体に対向配置される接続端子
部間から押出され、隣接する接続端子部間に流出する
が、導電粒子は、少なくとも一方の接続端子部に形成さ
れた凹溝に制限され、流出を阻止される。そのため、対
向する接続端子部間では、接着材に対する導電粒子の分
散密度が高くなり、導電性が向上する。一方、隣接する
接続端子部間では微細ピッチであっても導電粒子の分散
密度はむしろ低くなる傾向にあり、絶縁性が低下するこ
とがない。According to the present invention, when two adherends are adhered by using the anisotropic conductive adhesive, the adherends are heated and pressed, and The adhesive material is in a molten state and is extruded from between the connecting terminal portions arranged to face each adherend and flows out between the adjacent connecting terminal portions, but the conductive particles are formed on at least one of the connecting terminal portions. It is restricted to the groove and is prevented from flowing out. Therefore, between the connecting terminal portions facing each other, the dispersion density of the conductive particles in the adhesive material is increased, and the conductivity is improved. On the other hand, the dispersion density of the conductive particles tends to be rather low between the adjacent connection terminal portions even with a fine pitch, and the insulating property does not deteriorate.

【０００９】また、凹溝は導電粒子の粒径よりも浅く設
定されるため、導電粒子によるアンカー効果を生じ、両
被着体の接着力が増強される。Further, since the groove is set to be shallower than the particle diameter of the conductive particles, an anchor effect is produced by the conductive particles, and the adhesive force between both adherends is enhanced.

【００１０】[0010]

【実施例】本発明は、２つの被着体を接着するにあた
り、これら被着体が加熱および加圧されることによっ
て、異方性導電接着剤中に概ね均一に分散されている導
電粒子が、対向する接続端子部の隙間から隣接する接続
端子部間へ流出するのを阻止するような接続端子部形状
としたことを特徴とする。EXAMPLES In the present invention, when two adherends are adhered to each other, the adherends are heated and pressed, whereby conductive particles substantially uniformly dispersed in the anisotropic conductive adhesive are obtained. The connection terminal portion is shaped so as to prevent the connection terminal portion from flowing out from the gap between the opposing connection terminal portions to the space between the adjacent connection terminal portions.

【００１１】以下、本発明の一実施例を図面に基づいて
説明するが、従来技術に類似し、対応する部分には同一
の参照符を付す。An embodiment of the present invention will be described below with reference to the drawings. However, it is similar to the prior art, and corresponding parts are designated by the same reference numerals.

【００１２】前述の図６および図７に示すような、たと
えば、ＬＣＤ１とＴＡＢ２とを接続するために、ＬＣＤ
１に形成されたＩＴＯ４とＴＡＢ２側の電極５とを異方
性導電接着剤６を用いて接着するにあたり、本発明によ
ると、図１の断面図に示すように前記電極５の接続端子
部５ａに、前記異方性接着剤６中に含まれる導電粒子７
の粒径よりも浅い深さの凹溝１１が形成される。この凹
溝１１は前記接続端子部５ａの幅方向は勿論、長手方向
にも凹状となっている。As shown in FIGS. 6 and 7, for example, to connect LCD 1 and TAB 2, LCD
In adhering the ITO 4 and the TAB 2 side electrode 5 formed on the No. 1 using the anisotropic conductive adhesive 6, according to the present invention, as shown in the sectional view of FIG. The conductive particles 7 contained in the anisotropic adhesive 6
The recessed groove 11 having a depth shallower than the grain size is formed. The recessed groove 11 is recessed not only in the width direction of the connection terminal portion 5a but also in the longitudinal direction.

【００１３】接続端子部５ａに凹溝１１を形成するには
次による。先ず図２に示すＴＡＢ基板１０上に接着層９
を介して電極５が配設されるＴＡＢ２の表面に、全体に
わたりフォトレジスト１３を塗布する。次いで、前記電
極５の接続端子部５ａ上にその長さおよび幅より僅かに
狭い面積にわたる露光を行い、現像して図３に示すよう
に前記露光部分１３ａのフォトレジストを取除く。図３
によると、接続端子部５ａにおいて凹溝１１を形成した
い部分が露出される。その後、この接続端子部５ａの露
出された部分に、導電粒子７の粒径以下の深さのエッチ
ングを行い、図４に示すように、接続端子部５ａの表面
に凹溝１１を形成する。最後にＴＡＢ２の表面に残るフ
ォトレジストを剥離することによって図５に示す凹溝付
きのＴＡＢ２が形成される。The concave groove 11 is formed in the connection terminal portion 5a as follows. First, the adhesive layer 9 is formed on the TAB substrate 10 shown in FIG.
A photoresist 13 is applied over the entire surface of the TAB 2 on which the electrode 5 is provided via. Then, the connection terminal portion 5a of the electrode 5 is exposed to light over an area slightly smaller than its length and width, and developed to remove the photoresist on the exposed portion 13a as shown in FIG. Figure 3
According to this, the portion of the connection terminal portion 5a where the groove 11 is to be formed is exposed. Then, the exposed portion of the connection terminal portion 5a is etched to a depth equal to or smaller than the particle diameter of the conductive particles 7 to form a groove 11 on the surface of the connection terminal portion 5a, as shown in FIG. Finally, the photoresist remaining on the surface of TAB2 is peeled off to form TAB2 with concave grooves shown in FIG.

【００１４】このように、接続端子部５ａに凹溝１１を
形成すると、前記対向する端子部４ａ，５ａ間に分散さ
れている導電粒子７は、これら対向端子部の隙間から接
着材８が流出しても、導電粒子７は、凹溝１１の周囲の
土手部分で制止され、隣接する端子部５ａ，５ａまたは
４ａ，４ａ間に流出することがない。When the concave groove 11 is formed in the connection terminal portion 5a in this manner, the conductive particles 7 dispersed between the opposed terminal portions 4a and 5a have the adhesive 8 flow out from the gap between the opposed terminal portions. However, the conductive particles 7 are stopped by the bank portion around the recessed groove 11 and do not flow out between the adjacent terminal portions 5a, 5a or 4a, 4a.

【００１５】したがって、対向する接続端子部間の異方
性導電剤６中に多くの導電粒子７が残存することにな
り、対向する接続端子部間における接続の信頼性が向上
する。また、多くの導電粒子７が対向する接続端子部４
ａ，５ａに食い込むことによって生ずるアンカー効果
（くさびが打ち込まれる状態）も増大し、ＬＣＤ１とＴ
ＡＢ２との接着力も向上する。さらに、隣接する接続端
子部間では接着材８に対する導電粒子７の分散密度が低
下することになり、絶縁性の向上が期待できる。Therefore, many conductive particles 7 remain in the anisotropic conductive material 6 between the opposing connecting terminal portions, and the reliability of the connection between the opposing connecting terminal portions is improved. In addition, the connection terminal portion 4 where many conductive particles 7 face each other
Anchor effect (wedge driven state) caused by cutting into a and 5a also increases, and LCD1 and T
The adhesive strength with AB2 is also improved. Further, the dispersion density of the conductive particles 7 with respect to the adhesive material 8 is reduced between the adjacent connection terminal portions, and improvement in insulation can be expected.

【００１６】上記のほか凹溝１１は、ＬＣＤ１のＩＴＯ
４に設けられてもよい。また凹溝１１がＬＣＤ側とＴＡ
Ｂ側の両方に設けられると、導電粒子７の流出阻止のた
め一層効果的である。In addition to the above, the groove 11 is made of ITO of the LCD 1.
4 may be provided. Also, the groove 11 is on the LCD side and TA
If it is provided on both the B side, it is more effective for preventing the conductive particles 7 from flowing out.

【００１７】なお、凹溝１１を形成する手段として、前
記図３に示すように、ＴＡＢ２の表面全域にわたって塗
布されたフォトレジスト１３を接続端子部５ａ上で凹状
となるように露光し、この部分を取除いた状態のままに
とどめてもよい。As a means for forming the concave groove 11, as shown in FIG. 3, the photoresist 13 applied over the entire surface of the TAB 2 is exposed so as to have a concave shape on the connection terminal portion 5a, and this portion is exposed. You may leave it as it is.

【００１８】これらの実施例ではＬＣＤ１とＴＡＢ２と
を接着する場合について述べたが、本発明の接続構造
は、これ以外の電極基板の接着にも適用できる。In these embodiments, the case where the LCD 1 and the TAB 2 are adhered has been described, but the connection structure of the present invention can be applied to the adhesion of other electrode substrates.

【００１９】[0019]

【発明の効果】以上のように本発明は、接続端子部が形
成された２つの被着体を異方性導電接着剤を用いて接着
するにあたり、少なくとも一方の被着体の接続端子部に
凹溝を形成し、この凹溝の深さは異方性導電接着剤中に
含まれる導電粒子の粒径よりも浅く設定される。そのた
め、接続されるように対向する接続端子部の隙間から導
電粒子が流出することがなくなり、この対向する接続端
子部間では、導電粒子の分散する密度が高くなり、これ
ら導電粒子によるアンカー効果も得られ、接続の信頼性
が向上し、接着力が増し、隣接する接続端子部間の絶縁
性が乱されることもない。As described above, according to the present invention, at the time of adhering two adherends on which the connection terminal portions are formed by using the anisotropic conductive adhesive, at least one of the adherends has a connection terminal portion. A groove is formed, and the depth of the groove is set to be shallower than the particle diameter of the conductive particles contained in the anisotropic conductive adhesive. Therefore, the conductive particles do not flow out from the gap between the connection terminal portions facing each other so as to be connected, the density of the conductive particles dispersed between the connection terminal portions facing each other is high, and the anchor effect by these conductive particles is also high. Thus, the reliability of the connection is improved, the adhesive force is increased, and the insulation between adjacent connection terminal portions is not disturbed.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明の一実施例を示す縦断面図である。FIG. 1 is a vertical sectional view showing an embodiment of the present invention.

【図２】本発明の凹溝の形成順序の説明図である。FIG. 2 is an explanatory diagram of the order of forming the groove according to the present invention.

【図３】本発明の凹溝の形成順序の説明図である。FIG. 3 is an explanatory view of the order of forming the concave groove of the present invention.

【図４】本発明の凹溝の形成順序の説明図である。FIG. 4 is an explanatory view of the order of forming the concave groove of the present invention.

【図５】本発明の凹溝の形成順序の説明図である。FIG. 5 is an explanatory view of the order of forming the concave groove of the present invention.

【図６】実装状態を示す斜視図である。FIG. 6 is a perspective view showing a mounted state.

【図７】従来の接続端子部付近の拡大縦断面図である。FIG. 7 is an enlarged vertical cross-sectional view in the vicinity of a conventional connection terminal portion.

【図８】従来の接着作用を説明する縦断面図である。FIG. 8 is a vertical cross-sectional view illustrating a conventional bonding action.

【図９】従来の接続状態を示す縦断面図である。FIG. 9 is a vertical cross-sectional view showing a conventional connection state.

【符号の説明】[Explanation of symbols]

１ 液晶表示素子（ＬＣＤ） ２ ＴＡＢ ４ 金属酸化透明薄膜（ＩＴＯ） ５ 電極 ５ａ ＴＡＢ側の接続端子部 ６ 異方性導電接着剤 ７ 導電粒子 ８ 接着材 １０ ＴＡＢ基板 １１ 凹溝 １３ フォトレジスト DESCRIPTION OF SYMBOLS 1 Liquid crystal display element (LCD) 2 TAB 4 Metal oxide transparent thin film (ITO) 5 Electrode 5a TAB side connection terminal portion 6 Anisotropic conductive adhesive 7 Conductive particles 8 Adhesive 10 TAB substrate 11 Recessed groove 13 Photoresist

Claims (1)

【特許請求の範囲】 【請求項１】 微細ピッチの接続端子部が形成される２
つの被着体を異方性導電接着剤を用いて接着し、対向す
る接続端子部間を電気的に接続するにあたり、少なくと
も一方の被着体側の接続端子部に、前記異方性導電接着
剤中に分散される導電粒子の粒径よりも浅い深さを有す
る凹溝が形成されることを特徴とする被着体の接続端子
部の接続構造。Claim: What is claimed is: 1. A connection terminal part having a fine pitch is formed.
When the two adherends are bonded using an anisotropic conductive adhesive to electrically connect the connection terminal portions facing each other, the anisotropic conductive adhesive is applied to at least one of the connection terminal portions on the adherend side. A connection structure for connecting terminals of an adherend, wherein a groove having a depth shallower than a particle diameter of conductive particles dispersed therein is formed.
JP3181139A 1991-07-22 1991-07-22 Connection structure of connecting terminal part of element to be adhered Pending JPH0529386A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3181139A JPH0529386A (en) 1991-07-22 1991-07-22 Connection structure of connecting terminal part of element to be adhered

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3181139A JPH0529386A (en) 1991-07-22 1991-07-22 Connection structure of connecting terminal part of element to be adhered

Publications (1)

Publication Number Publication Date
JPH0529386A true JPH0529386A (en) 1993-02-05

Family

ID=16095573

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3181139A Pending JPH0529386A (en) 1991-07-22 1991-07-22 Connection structure of connecting terminal part of element to be adhered

Country Status (1)

Country Link
JP (1) JPH0529386A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2788192A1 (en) * 1998-12-30 2000-07-07 Giesecke & Devrient Gmbh Making electrically conducting adhesive connection between module and electronic component e.g. for chip card, involves first introducing conducting body arranged in compressible fixing structure between them
US7134879B2 (en) 2003-06-05 2006-11-14 Sharp Kabushiki Kaisha Anisotropic conductive material body, display apparatus, method for producing the display apparatus, and conductive member
JP2007025710A (en) * 2006-08-28 2007-02-01 Seiko Epson Corp Electro-optical device and electronic equipment
US8253320B2 (en) 2002-04-18 2012-08-28 Seiko Epson Corporation Method of manufacturing an electric optical device in which external connection terminals are formed
JP2012244080A (en) * 2011-05-24 2012-12-10 Kyocera Display Corp Flexible wiring board and display device
JP2017162543A (en) * 2017-06-08 2017-09-14 大日本印刷株式会社 Substrate for suspension, suspension, suspension with head and hard disk drive
WO2018168627A1 (en) * 2017-03-14 2018-09-20 パナソニックＩｐマネジメント株式会社 Touch sensor
CN111384005A (en) * 2020-03-23 2020-07-07 甬矽电子(宁波)股份有限公司 Microelectronic package, flip-chip process and application thereof, and microelectronic device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2788192A1 (en) * 1998-12-30 2000-07-07 Giesecke & Devrient Gmbh Making electrically conducting adhesive connection between module and electronic component e.g. for chip card, involves first introducing conducting body arranged in compressible fixing structure between them
US8253320B2 (en) 2002-04-18 2012-08-28 Seiko Epson Corporation Method of manufacturing an electric optical device in which external connection terminals are formed
US8339030B2 (en) 2002-04-18 2012-12-25 Seiko Epson Corporation Method of manufacturing an electric optical device in which external connection terminals are formed
US8796913B2 (en) 2002-04-18 2014-08-05 Seiko Epson Corporation Method of manufacturing an electric optical device in which external connection terminals are formed
US7134879B2 (en) 2003-06-05 2006-11-14 Sharp Kabushiki Kaisha Anisotropic conductive material body, display apparatus, method for producing the display apparatus, and conductive member
JP2007025710A (en) * 2006-08-28 2007-02-01 Seiko Epson Corp Electro-optical device and electronic equipment
JP2012244080A (en) * 2011-05-24 2012-12-10 Kyocera Display Corp Flexible wiring board and display device
WO2018168627A1 (en) * 2017-03-14 2018-09-20 パナソニックＩｐマネジメント株式会社 Touch sensor
JP2017162543A (en) * 2017-06-08 2017-09-14 大日本印刷株式会社 Substrate for suspension, suspension, suspension with head and hard disk drive
CN111384005A (en) * 2020-03-23 2020-07-07 甬矽电子(宁波)股份有限公司 Microelectronic package, flip-chip process and application thereof, and microelectronic device
CN111384005B (en) * 2020-03-23 2022-03-04 甬矽电子(宁波)股份有限公司 Microelectronic package, flip-chip process and application thereof, and microelectronic device

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