JP4151634B2 - SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD, CIRCUIT BOARD, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC DEVICE - Google Patents

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof, a circuit board, an electro-optical device, and an electronic apparatus.

As a connection method for mounting the driving IC on the substrate of the display device, for example, COG (Chip On Glass) connection is known. In this COG connection, for example, an Au plated bump is formed on the driving IC, and the driving IC is mounted using an anisotropic conductive film (ACF) or anisotropic conductive paste (ACP). . In such a method, Au plating bumps are formed by sputtering a seed layer such as TiW / Au on a semiconductor element and patterning a resist, followed by electrolytic Au plating with a height of about 20 μm. .
However, in recent years, as the electrodes of the driving IC have narrowed (narrow pitch), it has become difficult to form stable bumps such as high aspect resist formation or seed layer etching. In addition, the electrode gap size is close to the size of the conductive fine particles in the anisotropic conductive film (ACF), and therefore there is a possibility that a short circuit occurs due to the conductive fine particles.

Under such a background, Patent Document 1 discloses that a resin-made protrusion is provided at a position away from the electrode, and a connection pattern that covers the surface of the protrusion and is connected to the electrode is a conductive layer. A forming technique is disclosed. According to this technology, it is only necessary to pattern a metal film that is thinner than that of Au-plated bumps. Therefore, the aspect ratio of the etching resist can be reduced, so that a narrow gap (narrow pitch) is possible. Become.
Further, the danger of short-circuit due to the conductive fine particles can be dealt with by using a thermosetting sealing resin or the like in which no conductive fine particles exist.
JP-A-2-272737

  By the way, when a semiconductor device having a protruding electrode described in Patent Document 1 is bonded to a glass substrate or the like via a sealing resin, it is necessary to deform a resin-made protruding portion and generate a repulsive force due to elastic deformation. . And in order to confirm the deformation | transformation state of this protrusion part from the glass substrate surface, it is desirable for the shape of a protrusion part to be a hemispherical shape or a semi-cylinder shape.

FIG. 17A is an enlarged cross-sectional view of a main part of a semiconductor device having a hemispherical bump electrode 8. Reference numeral 1 is a substrate (semiconductor substrate as a semiconductor device) on which a semiconductor element (not shown) is formed, reference numeral 2 is an electrode provided on the substrate 1 for inputting and outputting electrical signals, and reference numeral 3 is a substrate 1. Protective film (passivation film) provided to protect the active surface, 4 is a core made of a resin-made protrusion, and 5 is a pattern formed so as to be drawn from the electrode 2 and cover the top of the core 4 It is the wiring part made.
When the bump electrode 8 is pressed to join such a semiconductor device to the glass substrate 11, not only the top portion of the core 4 but also the bottom portion thereof is greatly bent as shown in FIG. In particular, at the bottom of the core 4, the angle θ formed between the outer surface of the core 4 and the substrate 1 becomes an acute angle due to the deformation of the core 4, so that the wiring portion 5 formed so as to cover the bottom of the core 4 is large. There is a concern that distortion may occur and breakage or peeling may occur.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor device having a high connection reliability and a narrow gap (narrow pitch) without using an anisotropic conductive film. It is an object to provide a manufacturing method, a circuit board, an electro-optical device, and an electronic apparatus.

In order to achieve the above object, a semiconductor device according to the present invention includes a substrate on which a semiconductor element is formed , an electrode formed on the substrate, a core made of a resin protrusion protruding from the electrode, and the electrode. A bump device comprising at least a bump electrode that is electrically connected and has a wiring portion reaching the top of the core, characterized in that the elastic modulus on the top side of the core is smaller than the elastic modulus on the bottom side. To do.

  In the semiconductor device of the present invention, the bump electrode is pressed against the substrate to be mounted, and the resin core is elastically deformed, whereby the substrate and the bump electrode are brought into surface contact to perform electrical connection. Therefore, an anisotropic conductive film or an anisotropic conductive adhesive is not necessary. Therefore, a highly reliable connection without a short circuit between adjacent electrodes or adjacent terminals can be performed. In addition, since materials such as an anisotropic conductive film and an anisotropic conductive adhesive are expensive, making these materials unnecessary can contribute to a reduction in manufacturing cost.

  The bump electrode is in an elastically deformed state at the time of mounting, but in the semiconductor device of the present invention, since the elastic modulus on the top side of the core is smaller than that on the bottom side, only the top side of the core is selectively used. It will be deformed. On the other hand, on the bottom side of the core, the degree of deformation is small and the original shape is maintained. In particular, at the bottom of the core, the angle formed between the outer surface of the core and the substrate does not become an acute angle, and stress is not easily applied to the wiring portion disposed on the bottom of the core. Therefore, since there is no fear of connection failure such as breakage or peeling of the wiring portion, it is possible to perform connection with higher reliability.

In the semiconductor device of the present invention, it is preferable that a semiconductor element is formed on the substrate and the core is substantially hemispherical.
In this way, when the core is bonded to, for example, a terminal on a glass substrate, the contact portion of the wiring portion when there is no load becomes almost a point, and therefore the change in the contact area due to pressure during connection is large. Therefore, the measurement becomes easy, and mounting can be performed reliably and easily.
Also, if the core is substantially hemispherical, the angle θ formed between the outer surface of the core and the substrate at the bottom of the core can be made obtuse, and even if the core is deformed, θ is less likely to be an acute angle and the wiring portion In addition, the possibility of peeling can be reduced as much as possible.

  In the semiconductor device of the present invention, it is preferable that a plurality of the electrodes are provided, the core is substantially semi-cylindrical, and a plurality of wiring portions connected to the electrodes are provided on the top of the core. In this way, the contact area of the wiring part differs greatly between when no load is applied and when pressure is applied during connection, just as when the core is substantially hemispherical. This is preferable because the angle between the outer surface of the core and the substrate can be made obtuse.

In the semiconductor device of the present invention, the core is characterized in that a filler is dispersed in a resin, and the dispersion density of the filler is higher on the bottom side than on the top side.
When the filler is dispersed in the resin, the elastic modulus can be changed as desired. Therefore, by making the dispersion density of the filler in the core different, a predetermined elastic modulus can be obtained at each core portion. If the dispersion density of the filler is increased on the bottom side as compared with the top side, the elastic modulus on the bottom side increases, so that only the top is easily selectively elastically deformed. Therefore, there is no deformation at the bottom of the bump electrode, and the possibility of breakage and peeling of the wiring portion disposed there can be reduced.

In the semiconductor device of the present invention, the core is formed by stacking the second core on the first core, and the elastic modulus of the first core is larger than the elastic modulus of the second core. And
If the second core having a small elastic modulus is laminated on the first core having a large elastic modulus, only the top side of the bump electrode can be selectively elastically deformed. Therefore, there is no deformation at the bottom of the bump electrode, and the possibility of breakage and peeling of the wiring portion disposed there can be reduced.

The semiconductor device according to the present invention is characterized in that a protective part comprising a convex part covering the outer peripheral edge of the bottom part of the bump electrode is provided.
When the core is elastically deformed at the time of mounting, a convex portion is provided on the outer peripheral edge of the bottom of the bump electrode, which is the portion where the degree of bending is the largest in the wiring portion and is likely to break, and this is used as a protective portion. Coating. By providing the protective portion on the outer peripheral edge of the core, which is the direction in which the core is elastically deformed, the deformation of the core in this direction is inhibited and the wiring portion is prevented from being greatly bent. Furthermore, the wiring part is covered with the protection part and is strongly bonded onto the semiconductor substrate. Therefore, the possibility of breakage and peeling of the wiring portion at the bottom of the core can be reduced.

The method for manufacturing a semiconductor device of the present invention includes a substrate on which a semiconductor element is formed , an electrode formed on the substrate, a core made of a resin protrusion protruding from the electrode, and an electrode electrically connected to the electrode, And a bump electrode comprising at least a wiring portion extending to the top of the core, and a method of manufacturing a semiconductor device having at least a resin liquid in which a filler is dispersed in a photosensitive insulating resin; and The substrate coated with the resin liquid is allowed to stand, and the filler is allowed to settle in the resin liquid, and the resin liquid layer on which the filler has settled is subjected to exposure processing and development processing for patterning, and during the exposure processing. By adjusting the exposure conditions, the step of forming the resin liquid layer on the core of the pattern whose upper surface is a convex curved surface and the wiring portion having a pattern extending from the top of the electrode to the top of the core are formed. And having a degree.

The circuit board of the present invention is characterized in that the semiconductor device is mounted.
According to this circuit board, since the semiconductor device capable of narrowing the gap (narrow pitch) is mounted as described above, high-density mounting is possible. In addition, the connection reliability is high, and the cost is further reduced.

The electro-optical device of the present invention is characterized in that the semiconductor device or the circuit board is mounted.
According to this electro-optical device, as described above, high-density mounting is possible, connection reliability is high, and cost is reduced.

An electronic apparatus according to the present invention includes the circuit board or the electro-optical device.
According to this electronic device, as described above, high-density mounting is possible, connection reliability is high, and cost is further reduced.

The present invention will be described in detail below.
FIG. 1A is a partial plan view of a substrate (semiconductor substrate) on which a semiconductor element is formed as a first embodiment of the semiconductor device of the present invention, and FIG. 1B is a diagram in FIG. FIG. 1C is a cross-sectional view taken along the line AA, and FIG. 1C is a cross-sectional view taken along the line BB in FIG. The substrate in the present embodiment may be a semiconductor substrate such as a silicon wafer in which a large number of semiconductor chips are formed, or may be composed of individual semiconductor chips. In the case of a semiconductor chip, it is generally a rectangular parallelepiped (including a cube), but its shape is not limited and may be spherical.

  In FIGS. 1A to 1C, reference numeral 1 denotes a substrate (semiconductor substrate as a semiconductor device) on which a semiconductor element (not shown) is formed, and reference numeral 2 denotes an electric signal input / output on the substrate 1. The provided electrode, reference numeral 3 is a protective film (passivation film) provided to protect the active surface of the substrate 1, and reference numeral 4 is a protrusion formed of a photosensitive insulating resin and arranged at substantially the same pitch as the electrode 2. Reference numeral 5 denotes a wiring portion formed so as to cover the surfaces (top surfaces) of the electrode 2 and the core 4.

  The electrode 2 is formed by sputtering, for example, and further patterned into a predetermined shape (for example, rectangular shape) using a resist or the like. A plurality of such electrodes 2 are formed in the vicinity of the edge of the substrate 1 at a predetermined pitch. In addition, although this electrode 2 shall be formed with Al in this embodiment, other than Al, for example, Ti (titanium) layer, TiN (titanium nitride) layer, AlCu (aluminum / copper) layer, and A structure in which TiN layers (cap layers) are sequentially stacked may be used. Furthermore, the electrode 2 is not limited to the above-described configuration, and may be appropriately changed according to required electrical characteristics, physical characteristics, and chemical characteristics.

  The protective film 3 covers the periphery of the electrode 2 and exposes the electrode 2 in the opening thereof, and is formed of SiO2 (silicon oxide), SiN (silicon nitride), polyimide resin, or the like, and has a thickness. Is formed to about 1 μm, for example. Here, the opening through which the electrode 2 is exposed may be sufficiently smaller than the opening in the conventional semiconductor device. Specifically, the opening may be a square (or a rectangle) having one side of about 5 to 10 μm. By reducing the opening in this way, the protruding electrode 8 described later can be formed in a sufficient size in the area of a normal electrode forming portion. In this case, the size of the electrode 2 may be a conventional size, or may be reduced in accordance with the opening of the protective film 3.

The core 4 is a protrusion formed on the active surface side of the substrate 1 at a height protruding from the electrode 2 by, for example, about 10 to 20 μm. In this embodiment, as shown in FIG. It has a hemispherical shape having a diameter of about 20 to 50 μm when viewed in plan. A plurality of such cores 4 are formed in the same direction as the electrodes 2 and are arranged at substantially the same pitch as the electrodes 2.
Fillers 13 are dispersed in the core 4, and the dispersion density is higher on the bottom side (active surface side of the substrate 1) than on the top side of the core 4. By making the dispersion density of the filler 13 in the core 4 different, the elastic modulus on the top side and the elastic modulus on the bottom side of the core 4 can be made different. That is, the bottom side of the core 4 in which the filler 13 is dispersed at a high density has a higher elastic modulus than the top side in which the filler 13 is dispersed at a low density. That is, the bottom side of the core 4 is a hard protrusion that is less likely to be elastically deformed than the top side.

The core 4 is formed of a photosensitive insulating resin, and specifically includes an acrylic resin, a phenol resin, a silicone resin, a polyimide resin, a silicone-modified polyimide resin, an epoxy resin, or the like.
The filler 13 is made of an insulating resin and is made of a material having a higher elastic modulus and a higher specific gravity than the photosensitive insulating resin forming the core 4. Specifically, silica, alumina and the like can be exemplified. The shape of the filler 13 is not particularly limited, such as spherical or fibrous, but a spherical filler having a diameter of 0.1 to 5 μm is suitable. Further, the dispersion concentration of the filler 13 with respect to the whole resin constituting the core 4 can be appropriately selected depending on the kind and particle size of the filler to be added, but it is 5 to 70% by weight in the state of the coating liquid before curing. preferable. This is because if the amount of filler added is too large or too small, a significant difference in the elastic modulus of the core 4 cannot be produced between the top side and the bottom side.

  Among the photosensitive insulating resins constituting the core 4, an acrylic resin whose shape can be controlled depending on the exposure conditions is preferable because it can be easily patterned into a desired shape by adjusting the exposure conditions. In this embodiment, an acrylic resin whose shape can be controlled depending on the exposure conditions is used as the photosensitive insulating resin. In addition, the filler 13 can be easily dispersed in the acrylic resin liquid forming the core 4, and in addition, the resin liquid layer is allowed to stand before curing and the filler 13 is allowed to settle to vary its dispersion density. From the viewpoint of easily controlling the sedimentation conditions of the filler 13, beads made of silica having a diameter of 3 μm are used.

  In the present embodiment, the wiring portion 5 is formed of a first conductive layer 6 and a second conductive layer 7 as shown in FIG. The first conductive layer 6 serves as a base (seed layer) for the second conductive layer 7 formed by electrolytic plating as will be described later. For example, a laminated structure of TiW and Au formed thereon, Alternatively, a laminated structure of Cr and Au formed thereon is suitable. However, in addition to such a structure, for example, a structure using a single metal such as Au, TiW, Cu, Ni, Pd, Al, Cr, Ti, W, NiV, lead-free solder, or the like of these metals A structure in which several layers are stacked can be employed.

The second conductive layer 7 is selectively formed on the first conductive layer 6 by electrolytic plating, and is made of a material having higher corrosion resistance than the electrode 2, for example, Au, and has a thickness of about 0.5 μm to 10 μm. Preferably, it is formed to have a thickness of about 2 μm. With such a configuration, the second conductive layer 7 has a function of preventing corrosion of the electrode 2 and occurrence of electrical failure.
The wiring pattern 5 of the present invention connected to the electrode 2 and extending to the top of the core 4 is formed by the laminated pattern composed of the first conductive layer 6 and the second conductive layer 7. And the bump electrode 8 is formed by the wiring part 5 formed on this.

  2 is an enlarged view of a main part showing a state in which the bump electrode 8 shown in FIG. 1 is mounted on a substrate 11 such as glass via the terminal electrode 12, and is a cross-sectional view corresponding to FIG. It is sectional drawing corresponding to the BB arrow sectional drawing in Fig.1 (a). When the bump electrode 8 is mounted on the substrate 11, the bump electrode 8 is pressed against the terminal electrode 12 provided on the glass substrate 11 and is elastically deformed and fixed by a sealing resin (not shown). In the semiconductor device of the present invention, since the filler 13 is dispersed at a high density on the bottom side of the core 4, the elastic modulus is higher than that on the top side and the elastic deformation is difficult. Only the top side of the bump electrode 8 is selectively elastically deformed to such an extent that the wiring part 5 can be sufficiently connected to the terminal electrode 12. That is, even if the vicinity of the top of the bump electrode 8 is greatly deformed for the purpose of reliable connection with the substrate 11 to be mounted, no large elastic deformation occurs on the bottom side. Furthermore, since the angle θ formed between the outer surface of the bottom of the core 4 and the substrate 1 does not become an acute angle during mounting, the wiring portion 5 disposed there is not distorted and is not broken or peeled off. No worries. Therefore, a highly reliable connection is possible.

  In the semiconductor device of the present invention, since the shape of the bump electrode 8 is substantially hemispherical, the contact area differs greatly before and after the bump electrode 8 is pressed against the substrate 11 to be mounted. It is easy to visually recognize the contact area between the bump electrode 8 and the terminal electrode 12 from the back surface, and it is easy to inspect the connection state during mounting. In addition, the stress at the time of mounting can be further concentrated on the top side of the bump electrode 8, and deformation on the bottom side of the core 4 can be further reduced, which is preferable.

  Next, a method for manufacturing a semiconductor device according to the present invention will be described with reference to FIGS. 3 to 10, particularly focusing on the step of forming the bump electrode 8 on the substrate 1 having the above-described configuration. 3-10 is sectional drawing corresponding to FIG.1 (c), ie, sectional drawing corresponding to the BB arrow sectional drawing in Fig.1 (a).

First, as shown in FIG. 3, a plurality of electrodes 2 are formed in a predetermined position on the active surface of the substrate 1, and a protective film 3 is formed in a state where these electrodes 2 are exposed. For the formation of the protective film 3, first, a film is formed by SiO ₂ (silicon oxide), SiN (silicon nitride) or the like, and then a resist layer is formed thereon by a spin coat method, a dipping method, a spray coat method or the like. Then, the resist layer is exposed and developed using a mask on which a predetermined pattern is formed to form a resist pattern (not shown) having a predetermined shape. Thereafter, the film is etched using the resist pattern as a mask to form an opening for exposing the electrode 2 to obtain the protective film 3. Here, dry etching is preferably used for the etching, and reactive ion etching (RIE) is preferably used as the dry etching. However, wet etching can also be used as etching. Note that after the opening is formed in this manner, the resist pattern is removed using a stripping solution or the like.

  Next, as shown in FIG. 4, a resin liquid layer 4a is formed by applying a resin liquid in which the filler 13 is dispersed in the above-described resin constituting the core 4 on the protective film 3. For example, the resin liquid layer 4a is formed by applying a resin liquid in which silica having a particle diameter of 3 μm as the filler 13 is dispersed in an acrylic resin serving as a positive resist at a content of 30% by weight to about 10 to 20 μm. Since the filler 13 is evenly dispersed in the resin liquid layer 4a, when the filler 13 is allowed to stand at room temperature for 10 minutes, the filler 13 having a specific gravity larger than that of the resin settles toward the substrate 1, and the resin liquid layer 4a. Accumulate on the underside. Therefore, the dispersion density of the filler 13 can be changed between the upper layer and the lower layer of the resin liquid layer 4a. Next, the resin liquid layer 4a is pre-baked to fix the sedimentation of the filler 13 in the resin liquid layer 4a as shown in FIG.

  Next, as shown in FIG. 5, the mask 9 is positioned at a predetermined position on the resin liquid layer 4a and disposed. The mask 9 is made of, for example, a glass plate on which a light-shielding film such as Cr is formed, and a mask 4 having a circular opening 9a corresponding to the planar shape of the core 4 serving as a hemispherical protrusion to be formed is used. . The positioning of the mask 9 is performed so that the opening 9a is positioned at the location where the core 4 is formed.

Next, the mask 9 is irradiated with ultraviolet light to expose the resin liquid layer 4a exposed in the opening 9a. However, in this exposure, by adjusting the exposure conditions, the pattern made of the resin liquid layer 4a obtained after development is changed to a pattern whose upper surface is a convex curved surface.
Specifically, so-called underexposure is performed in which the material and thickness of the resin liquid layer 4a are exposed in an amount sufficiently smaller than the standard exposure amount. The actual exposure (underexposure) is performed, for example, at about half of the standard exposure amount.

  When exposure is performed in this manner, the amount of exposure gradually decreases in the resin liquid layer 4a exposed in the opening 9a of the mask 9 from the center of the opening 9a to the periphery. Therefore, when the development process is performed after the exposure process is performed in this manner, the unexposed part generated by the reduced exposure amount is developed and removed even in the resin liquid layer 4a exposed in the opening 9a. Is done. That is, as the resin liquid layer 4a goes from the center of the opening 9a to the peripheral portion, the degree of exposure on the surface layer side gradually decreases. -Removed. As a result, as shown in FIG. 6, the resin liquid layer 4a becomes a pattern whose upper surface is a convex curved surface, that is, a core 4 of a hemispherical protrusion.

  After forming the core 4 in which the filler 13 is dispersed in this way and removing the resin liquid layer 4a in other portions, as shown in FIG. 7, the entire surface of the substrate 1 including the upper surfaces of the electrode 2 and the core 4 is formed. Then, Cr and Au are laminated in this order by sputtering (sputtering method) to form the first conductive layer 6. The thickness of the first conductive layer 6 is, for example, about 30 nm for Cr and about 200 nm for Au.

  Next, a resist is applied to the entire surface of the first conductive layer 6 by spin coating, dipping, spray coating, or the like to form a resist layer. Then, the resist layer is exposed to light and developed using a mask corresponding to the planar shape (planar pattern) of the second conductive layer 7 and patterned into a predetermined shape to form the resist layer as shown in FIG. A resist pattern 10 having an opening shape corresponding to the pattern of the second conductive layer 7, that is, the pattern shape of the wiring portion 5 is formed.

  Next, an electroplating process is performed using the exposed portion of the first conductive layer 6 that is not covered with the resist pattern 10, that is, the exposed first conductive layer 6 as a seed layer. A second conductive layer 6 having a pattern, that is, a pattern of the wiring part 5 extending from the electrode 2 to the top of the core 4 is formed. Here, as the electrolytic plating process, a process of forming an Au plating layer thicker than the first conductive layer 6, for example, a process of forming an Au plating layer having a thickness of about 2 μm is employed. Subsequently, the resist pattern 7 remaining on the first conductive layer 6 is removed as shown in FIG.

Thereafter, the portion of the first conductive layer 6 that is not covered by the second conductive layer 7, that is, the portion that becomes the non-wiring portion is removed by etching, and the first conductive layer is removed as shown in FIG. A laminated pattern composed of the layer 6 and the second conductive layer 7 is formed. Then, the wiring portion 5 formed of a laminated pattern is formed so as to extend from the electrode 2 to the top of the core 4, and in particular, the bump electrode is formed from the core 4 and the wiring portion 5 formed thereon. 8 is formed.
Thereafter, the semiconductor device of the present invention is obtained by dicing into pieces as needed.

As for the etching of the first conductive layer 6, it is desirable to selectively etch the portion of the first conductive layer 6 that is not covered with the second conductive layer 7 as a mask. For example, either dry etching or wet etching can be employed.
Alternatively, a mask made of a resist pattern may be formed and used for etching.

In the semiconductor device thus obtained, for example, when this is mounted on a glass substrate of a display device, COG (Chip On Glass) connection is preferably used as the connection method. At that time, in the semiconductor device according to the present invention, the following method can be adopted as an inspection method for evaluating the connection reliability between the terminals.
First, the glass substrate 11 is placed on the bump electrode 8 composed of the core 4 and the wiring portion 5 so that the transparent terminal electrode 12 is in contact with the bump electrode 8. Then, in this state, since almost no load is applied to the bump electrode 8, the contact portion of the bump electrode 8 that contacts the terminal electrode 12 becomes almost a point, and the contact area is sufficiently small. Become.

  Next, from this state, the thermosetting sealing resin is filled between the substrate 1 and the glass substrate 11 using the thermosetting sealing resin, and heating and pressurization for connection are performed. Then, since the bump electrode 8 is formed by the elastically deformable core 4, the contact portion of the bump electrode 8 expands by being crushed by this heating and pressurization, and the surface becomes a contact area. At this time, since the filler 13 is dispersed in the core 4 and the dispersion density is higher on the bottom side than on the top side, only the contact portion at the top of the bump electrode 8 is selectively selected. It is crushed by causing elastic deformation, and almost no deformation on the bottom side occurs.

  Therefore, for example, by observing the contact portion of the top of the bump electrode 8 from the transparent substrate 12 side using an optical microscope, and measuring the change in the contact area, between the terminals, that is, between the terminal electrode 12 and the bump electrode 8 The connection state between them will be understood. Therefore, since the connection reliability can be easily inspected in this way, the inter-terminal connection structure obtained through this inspection process has high connection reliability. In addition, since the elastic deformation at the bottom of the bump electrode 8 is small, there is no fear that the wiring portion 5 disposed there will be peeled off from the core 4 or broken due to the deformation, and the connection reliability is further improved. It will be a thing.

In addition, in such a method of manufacturing a semiconductor device, since the core 4 is formed, the wiring portion 5 is provided thereon, and the bump electrode 8 is formed, a thin metal film is formed as the wiring portion 5. Narrow gaps (narrow pitches) can be made possible by performing patterning.
Further, since the core 4 is formed in a hemispherical shape whose upper surface is a convex curved surface, the above-described inspection method for evaluating the connection reliability between the terminals can be suitably employed. The connection reliability of the inter-terminal connection structure obtained through this can be improved.
Furthermore, since it is possible to perform the inspection without measuring the deformation of the conductive fine particles as in the prior art, it is not necessary to use an anisotropic conductive film or anisotropic conductive paste for the connection between the terminals. The cost for inter-connection can be reduced.

  Furthermore, as a method of making the dispersion density of the filler 13 different for the purpose of making the elastic modulus of the top side and the bottom side of the core 4 different, since the filler 13 naturally settles, special equipment and processes are required. However, it is possible to manufacture a semiconductor device having high connection reliability with only a slight modification of the conventional manufacturing process.

In the manufacturing method of the semiconductor device of the present invention, not only the first conductive layer 6 and the second conductive layer 7 are stacked by the different film forming methods to form the wiring portion 5, A film forming method may be used. That is, after the core 4 is formed, the conductive layer 13 to be the wiring portion 5 may be formed by depositing and laminating Cr and Au in this order on the entire surface of the substrate 1 by, for example, sputtering. In the semiconductor device manufactured in this way, the core 4 is covered with the single wiring portion 5.
Even in such a semiconductor device, as in the first embodiment, it is possible to reduce the gap (narrow pitch), improve the connection reliability of the inter-terminal connection structure, and further connect the inter-terminal connection. The cost for can be reduced.

  In the present invention, the metal material, that is, Au, TiW, Cu, Ni, Pd, Al, Cr, Ti, is used as a material for forming the first conductive layer 6, the second conductive layer 7, and the conductive layer 13. Without being limited to W, NiV, lead-free solder, etc., a conductive resin can also be used. In that case, as a patterning method of the conductive layer made of the conductive resin, a printing method or the like can be employed in addition to the photolithography method.

Next, a second embodiment of the semiconductor device of the present invention will be described.
This second embodiment is different from the first embodiment described above in order to increase the elastic modulus on the bottom side of the core 4 compared to the elastic modulus on the top side, as shown in FIG. As described above, when the second core 42 having a small volume made of a material having a lower elastic modulus than the first core 41 is mounted on the first core 41 having a large volume made of a material having a high elastic modulus. is there.
Thus, as shown in FIG. 11B, when the semiconductor device is mounted, when the bump electrode 8 is pressed against the terminal electrode 12 of the substrate 11 to be mounted, the second core 42 is in the first state. Therefore, only the top of the bump electrode 8 is selectively elastically deformed, and a strain load is hardly applied at the bottom. Therefore, the wiring part 5 is not broken or peeled off, and the connection reliability is high.

  In the present embodiment, a large deformation occurs at the boundary surface between the first core 41 and the second core 42, and there is a concern that the wiring portion 5 at this part is broken. If the second core 42 is laminated so that the angle θ4 formed by the joint portion between the core 41 and the second core becomes an obtuse angle, the angle θ4 does not become an acute angle even when the core 4 is greatly elastically deformed. . Therefore, the wiring portion 5 at this portion does not bend greatly and there is no fear of breakage or peeling, so that the connection reliability can be made high.

  It is preferable that the second core 42 has a smaller volume than the first core 41. If the overall shape of the bump electrode 8 is made smaller toward the top side, stress concentration occurs on the top side of the tip when pressing during mounting, so that it is difficult to apply strain stress on the bottom side to be protected. This is because breakage and peeling of the wiring portion 5 can be prevented.

Examples of the resin constituting the first core 41 include acrylic resins and phenol resins having a relatively high elastic modulus among the photosensitive insulating resins. The second core 42 includes the first core 41 and the first core 41. Although it will not specifically limit if it is a photosensitive insulating resin whose elastic modulus is smaller than the core 41, For example, a urethane resin etc. can be illustrated. Further, the resin constituting the first core 41 and the second core 42 may be made of the same material, and a filler may be added to the first core 41 to increase its elastic modulus.
In such a core 4, the first core 41 is formed by photolithography in the same manner as the core 4 of the first embodiment, and then the second core 42 is formed by photolithography in the same manner. Can do.

Next, a third embodiment of the semiconductor device of the present invention will be described with reference to FIG. The present embodiment is different from the first and second embodiments described above in that a protective portion 43 is provided at the bottom of the bump electrode 8. The protective portion 43 is a convex portion disposed on the outer peripheral edge of the bottom portion of the bump electrode 8 so as to cover a portion where the wiring portion 5 is bent.
The constituent material of the protection part 43 is not particularly limited as long as it is an insulating resin, and may be the same material as the core 4 or a different material. The elastic modulus is preferably larger than that of the core 4, but may be equal. Further, it is sufficient that the protective portion 43 is disposed so as to cover at least the wiring portion 5, but it may be disposed so as to cover the entire outer peripheral edge of the bottom of the bump electrode 8.

By providing such a protective portion 43, even if a strain stress acts on the bottom of the bump electrode 8, the adjacent protective portion 43 prevents the core 4 at that portion from being elastically deformed. The portion 5 is not bent at an acute angle. Therefore, breakage of the wiring portion 5 at this portion can be prevented, and a semiconductor device with high connection reliability can be obtained.
Furthermore, since the wiring part 5 is covered with the protective part 43, it is bonded to the substrate 1 with high strength, and the wiring part 5 is prevented from being peeled off.

In the semiconductor device of the present invention, the core 4 may have a semi-cylindrical shape instead of a hemispherical shape in any of the above-described embodiments.
The semi-cylindrical core 4 is formed such that its length direction is parallel to the arrangement direction of the electrodes 2. And about the wiring part 5, the some wiring part 5 connected with respect to the some electrode 2 is arrange | positioned so that it may each mount on the top part of the core 4. FIG.

In order to form such a semi-cylindrical protrusion 15, a mask having a rectangular opening is prepared as a mask particularly when a layer made of a photosensitive insulating resin is exposed. Here, the ratio of the long side to the short side of the rectangular opening is 3: 1 or more, that is, when the length of the short side is 1, the length of the long side is 3 or more. .
Then, a mask is formed on the resin layer in the same manner as in the first embodiment. Note that the positioning of the mask is performed so that the opening is located at the position where the protrusion is formed, as in the above embodiment.

Next, the resin layer exposed in the opening is exposed by irradiating the mask with ultraviolet light. In this exposure, as in the first embodiment, by adjusting the exposure conditions, the pattern made of the resin layer obtained after development is changed to a pattern whose upper surface is a convex curved surface. Specifically, under exposure as described above is performed.
When the exposure is performed in this way, the resin layer exposed in the opening of the mask has an elongated rectangular shape, so that the exposure is gradually performed from the center line parallel to the long side toward the long side. The amount is reduced. Therefore, when the development process is performed after the exposure process is performed in this manner, even in the resin layer exposed in the opening, the unexposed part generated by the decrease in the exposure amount is developed and removed. That is, as the resin layer goes from the center line of the opening to the long side, the degree of exposure on the surface layer side gradually decreases. Removed. As a result, the resin layer becomes a pattern whose upper surface is a convex curved surface, that is, an elongated semi-cylindrical core 4.

After the core 4 is formed in this way, the wiring portion 5 is formed in the same manner as in the first embodiment, whereby the bump electrode 8 composed of the core 4 and the wiring portion 5 formed thereon is formed. Form. In addition, about formation of the wiring part 5, you may employ | adopt the method using the conductive resin mentioned above other than the method performed in said each embodiment.
Thereafter, the semiconductor device of the present invention is obtained by dicing into pieces as needed.

Even in such a semiconductor device, it is possible to reduce the gap (narrow pitch), increase the connection reliability of the inter-terminal connection structure, and to improve the connection between the terminals. Cost can be reduced.
In particular, since the core 4 has a semi-cylindrical shape and a plurality of wiring portions 5 connected to the electrode 2 are formed on the top of the core 4, this core is used at the time of inspection for evaluating the connection reliability between the terminals described above. For example, when 4 is bonded to a terminal on a glass substrate, the contact portion of the wiring portion 5 when there is no load is substantially a line. Therefore, similarly to the first embodiment in which the core is hemispherical, the change in the contact area due to heating and pressurization at the time of connection can be increased, thereby facilitating the measurement.

  FIG. 13 is a perspective view showing a schematic configuration of a liquid crystal display device as an embodiment of the circuit board and the electro-optical device of the present invention. The liquid crystal display device shown in FIG. 13 includes a color liquid crystal panel 51 as an electro-optical panel and a COF (Chip On Film) circuit board 100 connected to the liquid crystal panel 51. The circuit board 100 includes the semiconductor device 101 of the present invention. Based on such a configuration, the circuit board 100 is an embodiment of the circuit board of the present invention, and the liquid crystal display device is an embodiment of the electro-optical device of the present invention. In the liquid crystal display device, an illumination device such as a backlight and other incidental devices are attached to the liquid crystal panel 51 as necessary. Further, the circuit board 100 is not limited to the COF type, and a COB (Chip On Board) type can also be used.

In addition to the COF type and the COB type, the present invention is also applicable to a COG (Chip On Glass) type electro-optical device in which a driver IC or the like is mounted directly on a display panel (liquid crystal panel). Is possible. FIG. 14 shows an example of a COG type liquid crystal display device.
In this figure, a liquid crystal display device 50 as an electro-optical device includes a frame-shaped shield case 68 made of a metal plate, a liquid crystal panel 52 as an electro-optical panel, a liquid crystal driving LSI 58, a liquid crystal panel 52, and a liquid crystal driving device. An ACF (Anisotropic Conductive Film) (not shown) for electrically connecting the bumps formed on the active surface of the LSI 58 to each other by a COG mounting method, and a holding member 172 for maintaining the overall strength It is comprised.

  The liquid crystal panel 52 includes a first substrate 53 made of soda glass having a thickness of 0.7 mm provided with a first transparent electrode layer on one surface, and a thickness of 0.7 mm provided with a second transparent electrode layer on one surface. The second substrate 54 made of soda glass is bonded so that the first transparent electrode layer and the second transparent electrode layer face each other, and the liquid crystal composition is sealed between these substrates. Is formed. The liquid crystal driving LSI 58 is directly and electrically connected to the one substrate 54 by the COG ACF, and thus the COG type liquid crystal panel 52 is formed. Here, the liquid crystal driving LSI 58 is manufactured by the manufacturing method of the semiconductor device.

  In addition to the liquid crystal display device, the electro-optical device can be used for an organic EL display device, for example. FIG. 15 is a cross-sectional view of an organic EL panel provided in an organic EL display device as an electro-optical device according to the present invention. The organic EL panel (electro-optical panel) 30 is generally configured by forming TFTs (Thin Film Transistors) 32 in a matrix on a substrate 31 and further forming a plurality of stacked bodies 33 thereon. The TFT 32 has a source electrode, a gate electrode, and a drain electrode, and the gate electrode and the source electrode are electrically connected to, for example, one of the protruding electrodes 8 shown in FIG. The laminated body 33 includes an anode layer 34, a hole injection layer 35, a light emitting layer 36, and a cathode layer 37. The anode layer 34 is connected to the drain electrode of the TFT 32, and current is supplied to the anode layer 34 via the source electrode and the drain electrode of the TFT 32 when the TFT 32 is in the ON state.

  In the organic EL panel 30 configured as described above, holes injected from the anode layer 34 into the light emitting layer 36 through the hole injection layer 35 and electrons injected from the cathode layer 37 into the light emitting layer 36 are generated. Light generated by recombination in the light emitting layer 36 is emitted from the substrate 31 side.

  Next, an electronic apparatus in which the electro-optical device according to this embodiment is mounted will be described. By incorporating electronic components such as a liquid crystal display device as an electro-optical device described above, a motherboard having a CPU (central processing unit), a keyboard, and a hard disk into the housing, for example, a notebook personal computer shown in FIG. 60 (electronic equipment) is manufactured.

  FIG. 16 is an external view showing a notebook computer as an electronic apparatus according to an embodiment of the present invention. In FIG. 16, 61 is a housing, 62 is a liquid crystal display device (electro-optical device), and 63 is a keyboard. Note that FIG. 16 shows a notebook computer provided with a liquid crystal display device, but an organic EL display device may be provided instead of the liquid crystal display device.

  In the above-described embodiment, a notebook computer has been described as an example of an electronic device. However, the present invention is not limited thereto, and is not limited to a mobile phone, a liquid crystal projector, a multimedia-compatible personal computer (PC), and an engineering workstation (EWS). It can be applied to electronic devices such as pagers, word processors, televisions, viewfinder type or monitor direct-view type video tape recorders, electronic notebooks, electronic desk calculators, car navigation devices, POS terminals, and devices equipped with touch panels. .

As described above, the semiconductor device and the manufacturing method thereof, the electro-optical device, and the electronic apparatus according to the embodiment of the present invention have been described. Is possible.
For example, the “semiconductor chip” or “semiconductor element” in the above-described embodiment can be replaced with “electronic element” to manufacture an electronic component. Examples of electronic components manufactured using such electronic elements include optical elements, resistors, capacitors, coils, oscillators, filters, temperature sensors, thermistors, varistors, volumes, and fuses.

(A)-(c) is a schematic block diagram of the semiconductor device of this invention. FIG. 2 is a fragmentary cross-sectional view of the semiconductor device shown in FIG. 1. FIG. 2 is a manufacturing process diagram of the semiconductor device shown in FIG. 1. FIG. 2 is a manufacturing process diagram of the semiconductor device shown in FIG. 1. FIG. 2 is a manufacturing process diagram of the semiconductor device shown in FIG. 1. FIG. 2 is a manufacturing process diagram of the semiconductor device shown in FIG. 1. FIG. 2 is a manufacturing process diagram of the semiconductor device shown in FIG. 1. FIG. 2 is a manufacturing process diagram of the semiconductor device shown in FIG. 1. FIG. 2 is a manufacturing process diagram of the semiconductor device shown in FIG. 1. FIG. 2 is a manufacturing process diagram of the semiconductor device shown in FIG. 1. (A), (b) is a schematic sectional drawing of 2nd Embodiment. (A), (b) is a schematic sectional drawing of 3rd Embodiment. 1 is a perspective view showing a schematic configuration of a liquid crystal display device according to the present invention. It is a disassembled perspective view which shows an example of a COG type liquid crystal display device. It is sectional drawing of the organic electroluminescent panel which concerns on this invention. It is an external view which shows the electronic device of this invention. (A), (b) is a schematic sectional drawing of the conventional semiconductor device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 2 ... Electrode, 4 ... Core, 41 ... 1st core, 42 ... 2nd core, 5 ... Wiring part, 8 ... Bump electrode, 13 ... Filler, 100 ... Circuit board, 101 ... Semiconductor device, 60 ... Electronic device .

Claims (10)

A substrate on which a semiconductor element is formed, an electrode formed on the substrate, a core made of a resin protrusion protruding from the electrode, and a wiring electrically connected to the electrode and reaching the top of the core A semiconductor device having at least a bump electrode comprising:
A semiconductor device characterized in that an elastic modulus on the top side of the core is smaller than an elastic modulus on the bottom side.
A semiconductor element is formed on the substrate,
The semiconductor device according to claim 1, wherein the core is substantially hemispherical.
2. The semiconductor device according to claim 1, wherein a plurality of the electrodes are provided, the core is formed in a substantially semi-cylindrical shape, and a plurality of wiring portions connected to the electrodes are provided on a top portion of the core.
4. The semiconductor device according to claim 1, wherein a filler is dispersed in the core, and a dispersion density of the filler is higher on the bottom side than on the top side. 5.
5. The core according to claim 1, wherein the core is formed by laminating a second core on the first core, and the elastic modulus of the first core is larger than the elastic modulus of the second core. The semiconductor device as described in any one.
6. The semiconductor device according to claim 1, further comprising a protective portion including a convex portion covering an outer peripheral edge of a bottom portion of the bump electrode.
A substrate on which a semiconductor element is formed, an electrode formed on the substrate, a core made of a resin protrusion protruding from the electrode, and a wiring electrically connected to the electrode and reaching the top of the core A bump electrode composed of a portion, and a manufacturing method of a semiconductor device having at least
Applying a resin liquid in which a filler is dispersed in a photosensitive insulating resin on the substrate;
Allowing the substrate coated with the resin liquid to stand and allowing the filler to settle in the resin liquid;
The resin liquid layer on which the filler has settled is subjected to exposure processing and development processing and patterned, and by adjusting exposure conditions during the exposure processing, the resin liquid layer has a pattern core whose upper surface is a convex curved surface Forming the step,
Forming a wiring portion having a pattern extending from the top of the electrode to the top of the core.
7. A circuit board on which the semiconductor device according to claim 1 is mounted.
An electro-optical device comprising the semiconductor device according to claim 1 or the circuit board according to claim 8 mounted thereon.
An electronic apparatus comprising the circuit board according to claim 8 or the electro-optical device according to claim 9.

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