JPH11145183A - Semiconductor device and manufacture of the same - Google Patents

Semiconductor device and manufacture of the same

Info

Publication number
JPH11145183A
JPH11145183A JP9305127A JP30512797A JPH11145183A JP H11145183 A JPH11145183 A JP H11145183A JP 9305127 A JP9305127 A JP 9305127A JP 30512797 A JP30512797 A JP 30512797A JP H11145183 A JPH11145183 A JP H11145183A
Authority
JP
Japan
Prior art keywords
resin adhesive
semiconductor chip
semiconductor device
electrode pad
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9305127A
Other languages
Japanese (ja)
Other versions
JP3362249B2 (en
Inventor
Masaaki Hiromitsu
正明 弘光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP30512797A priority Critical patent/JP3362249B2/en
Publication of JPH11145183A publication Critical patent/JPH11145183A/en
Application granted granted Critical
Publication of JP3362249B2 publication Critical patent/JP3362249B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device, in which a satisfactory electric connecting state can be maintained, and a method for manufacturing it by escaping the effects of resin adhesive to be used in connecting a semiconductor chip with a prescribed object to be connected. SOLUTION: In a semiconductor device 1, a second semiconductor chip 4 is connected electrically via resin adhesive 6 on a prescribed object to be connected (a first semiconductor chip) 3, on which an electrode pad 30 for attaining electric conduction with the outside part is formed. The first semiconductor chip 3 is provided with a protecting means for preventing the electrode pad 30 from being covered with the resin adhesive 6, when the liquid resin adhesive 6 is allowed to flow in connecting each semiconductor chips 3 and 4. It is desired that the protecting means is formed as a groove 34 or a dam part formed in the neighborhood of the peripheral edge part of the electrode pad 30 or a conductive pump 35 projected, so that the electrode pad 30 can be covered. Also, a site facing opposite the flowing direction of the liquid resin adhesive 6 of the groove part 34, dam part, or conductive bump 35 is formed like a U-shape or a circular arc.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本願発明は、外部との電気的
な導通を図るための電極パッドが形成された所定の接続
対象物上に、樹脂製接着材を介して半導体チップが機械
的に接合された半導体装置、およびその製造方法に関す
る。BACKGROUND OF THE INVENTION The present invention relates to a semiconductor chip which is mechanically bonded via a resin adhesive to a predetermined connection object on which electrode pads for establishing electrical continuity with the outside are formed. Semiconductor device and a method of manufacturing the same.

【０００２】[0002]

【従来の技術】たとえば、複数の半導体チップが組み込
まれた半導体装置の一例として、図１１ないし図１３に
示すようなものがある。図１１に良く表れているよう
に、上記半導体装置１は、フイルム基板２上に実装され
るとともにフイルム基板２の端子２２とワイヤ５を介し
て導通接続された第１の半導体チップ３と、この第１の
半導体チップと導通接続された第２の半導体チップ４と
を備えて大略構成されており、上記フイルム基板２、第
１および第２の半導体チップ３，４、ワイヤ５は、エポ
キシなどの樹脂によってパッケージングされている。こ
のような構成の半導体装置１においては、上記第１の半
導体チップ３と上記第２の半導体チップ４とは、樹脂製
接着剤６を介して機械的に接合されているが、この工程
は、たとえば以下のようにして行なわれる。2. Description of the Related Art FIGS. 11 to 13 show an example of a semiconductor device in which a plurality of semiconductor chips are incorporated. As shown in FIG. 11, the semiconductor device 1 includes a first semiconductor chip 3 mounted on a film substrate 2 and electrically connected to terminals 22 of the film substrate 2 via wires 5. It is generally configured to include a first semiconductor chip and a second semiconductor chip 4 conductively connected. The film substrate 2, the first and second semiconductor chips 3, 4, and the wire 5 are made of epoxy or the like. Packaged with resin. In the semiconductor device 1 having such a configuration, the first semiconductor chip 3 and the second semiconductor chip 4 are mechanically joined via a resin adhesive 6. For example, this is performed as follows.

【０００３】すなわち、図１２に示すように、機械的接
合工程は、ヒータを備えた支持台９上に載置された長尺
状の樹脂フイルム２Ａ上に第１の半導体チップ３を実装
し、この半導体チップ３が加熱された状態で行なわれ
る。この状態において、まず、上記第１の半導体チップ
３の主面３ａに、たとえば液状あるいは固体状の熱硬化
性の樹脂製接着剤６などを塗布あるいは貼着する。そし
て、樹脂製接着剤６が液体の状態において、上記第２の
半導体チップ４を上記第１の半導体チップ３に上方から
押しつけて各半導体チップ３，４のそれぞれバンプ３１
ａ，４０ａを接触させる。これにより、上記各半導体チ
ップ３，４どうしが導通接続される。さらに、この状態
において、上記樹脂製接着剤６を硬化させることにより
上記各半導体チップ３，４どうしが機械的に接合され
る。That is, as shown in FIG. 12, in the mechanical bonding step, the first semiconductor chip 3 is mounted on a long resin film 2A mounted on a support 9 having a heater. This is performed in a state where the semiconductor chip 3 is heated. In this state, first, for example, a liquid or solid thermosetting resin adhesive 6 or the like is applied or adhered to the main surface 3a of the first semiconductor chip 3. Then, when the resin adhesive 6 is in a liquid state, the second semiconductor chip 4 is pressed against the first semiconductor chip 3 from above, and the bumps 31 of the semiconductor chips 3 and 4 are formed.
a and 40a are brought into contact. Thus, the semiconductor chips 3 and 4 are electrically connected to each other. Further, in this state, the semiconductor chips 3 and 4 are mechanically joined by curing the resin adhesive 6.

【０００４】[0004]

【発明が解決しようとする課題】ところで、上記第１の
半導体チップ３は、上記第２の半導体チップ４が接合さ
れた状態において、その電極パッド３０がワイヤ５を介
して上記フイルム基板２の端子２２と導通接続される。
しかしながら、樹脂製接着剤６が液体の状態において上
記第２の半導体チップ４を上記第１の半導体チップ３に
上方から押しつけた場合には、樹脂製接着剤６が上記各
半導体チップ３，４の周縁に押しやられる恰好とされ、
上記樹脂製接着剤６が上記各半導体チップ３，４の周縁
に向かって流動することとなる。このとき、上記第１の
半導体チップ３の周縁部に形成された電極パッド３０上
にまで樹脂製接着剤６が至り、上記電極パッド３０に乗
り上げて上記電極パッド３０の一部ないし全部が樹脂製
接着剤６によって覆われてしまう場合がある（図１３参
照）。特に、樹脂パッケージングを行なう際などにおけ
る取り扱いの利便を図るべく、上記各半導体チップ３，
４どうしを強固に接合するために樹脂製接着剤６を比較
的多量に用いた場合に、上記した不具合が顕著に表れ
る。When the first semiconductor chip 3 is bonded to the second semiconductor chip 4, the electrode pads 30 of the first semiconductor chip 3 are connected to the terminals of the film substrate 2 via the wires 5. 22 is electrically connected.
However, when the second semiconductor chip 4 is pressed against the first semiconductor chip 3 from above while the resin adhesive 6 is in a liquid state, the resin adhesive 6 is It is said to be pushed to the periphery,
The resin adhesive 6 flows toward the periphery of each of the semiconductor chips 3 and 4. At this time, the resin adhesive 6 reaches the electrode pads 30 formed on the peripheral edge of the first semiconductor chip 3 and runs over the electrode pads 30 to partially or entirely form the electrode pads 30. It may be covered by the adhesive 6 (see FIG. 13). In particular, for the convenience of handling when performing resin packaging, etc., each of the above semiconductor chips 3,
When the resin adhesive 6 is used in a relatively large amount in order to firmly join the four members 4, the above-mentioned disadvantages appear remarkably.

【０００５】上記したように、ワイヤボンディング工程
は、上記各半導体チップ３，４どうしを接合した後に行
なわれるために、上記第１の半導体チップ３のワイヤボ
ンディング部位である電極パッド３０が樹脂製接着剤６
によってその一部でも覆われてしまったならば、所望通
りにワイヤボンディングを行なうことができなくなる。
すなわち、上記電極パッド３０が樹脂製接着剤６によっ
て覆われた状態でワイヤボンディングを行なった場合に
は、上記電極パッド３０とワイヤ５の端部との間に樹脂
製接着剤６が介在することとなり、これにより電気的な
接続状態が悪くなるとともに、接続強度の面においても
問題がある。また、このような接続状態で樹脂パッケー
ジングが施されて半導体装置１とされたとすれば、衝撃
などの外的な力によって上記電極パッド３０とワイヤ５
の端部との接続が容易に短絡してしまうといった問題が
ある。As described above, since the wire bonding step is performed after the semiconductor chips 3 and 4 are joined to each other, the electrode pads 30 which are the wire bonding portions of the first semiconductor chip 3 are bonded by resin. Agent 6
If it is partially covered, the wire bonding cannot be performed as desired.
That is, when wire bonding is performed in a state where the electrode pad 30 is covered with the resin adhesive 6, the resin adhesive 6 is interposed between the electrode pad 30 and the end of the wire 5. As a result, the electrical connection state deteriorates, and there is a problem in connection strength. Further, if the semiconductor device 1 is formed by performing resin packaging in such a connection state, the electrode pad 30 and the wire 5 are formed by an external force such as an impact.
There is a problem that the connection with the end portion of the substrate is easily short-circuited.

【０００６】本願発明は、上記した事情のもとで考え出
されたものであって、半導体チップと所定の接続対象物
との接合に際して使用される樹脂製接着剤の影響を回避
して、良好な電気的な接続状態が維持された半導体装
置、およびこれの製造方法を提供することをその課題と
している。The present invention has been conceived in view of the above circumstances, and has been proposed to avoid the influence of a resin adhesive used for joining a semiconductor chip to a predetermined object to be connected. It is an object of the present invention to provide a semiconductor device in which an excellent electrical connection state is maintained and a method for manufacturing the same.

【０００７】[0007]

【発明の開示】上記の課題を解決するため、本願発明で
は、次の技術的手段を講じている。DISCLOSURE OF THE INVENTION In order to solve the above problems, the present invention employs the following technical means.

【０００８】すなわち、本願発明の第１の側面によれ
ば、外部との電気的な導通を図るための電極パッドが形
成された所定の接続対象物上に、樹脂製接着材を介して
半導体チップが機械的に接合された半導体装置であっ
て、上記接続対象物には、上記半導体チップと上記接続
対象物とを接合する際に、液状とされた樹脂製接着剤が
流動させられた場合に、この樹脂製接着剤によって上記
電極パッドが覆われてしまわないようにするための保護
手段が設けられていることを特徴とする、半導体装置が
提供される。That is, according to the first aspect of the present invention, a semiconductor chip is provided on a predetermined connection object on which an electrode pad for establishing electrical conduction with the outside is formed via a resin adhesive. Is a semiconductor device mechanically joined, the connection object, when joining the semiconductor chip and the connection object, when the liquid resin adhesive is flowed Further, a semiconductor device is provided, which is provided with a protection means for preventing the electrode pad from being covered with the resin adhesive.

【０００９】好ましい実施の形態においては、上記保護
手段としては、上記電極パッドの周縁部近傍に形成され
た溝部またはダム部が採用されるが、上記溝部またはダ
ム部は、各電極パッド毎に設けてもよく、また複数の電
極パッドの群を１単位として、各単位毎に設けてもよ
い。もちろん、上記溝部またはダム部を上記半導体チッ
プが接合される領域を囲むようにして設けてもよい。ま
た、上記保護手段としては、上記電極パッドを覆うよう
にして突出形成された導体バンプが採用してもよく、こ
の導体バンプと上記溝部またはダム部とを組み合わせて
保護手段を構成してもよい。In a preferred embodiment, a groove or a dam formed near the periphery of the electrode pad is employed as the protection means. The groove or the dam is provided for each electrode pad. Alternatively, a group of a plurality of electrode pads may be provided as one unit and provided for each unit. Of course, the groove or dam may be provided so as to surround a region where the semiconductor chip is bonded. Further, as the protection means, a conductor bump formed so as to cover the electrode pad may be employed, and the protection means may be constituted by combining the conductor bump with the groove or dam. .

【００１０】好ましい実施の形態においてはさらに、上
記溝部、ダム部、または導体バンプは、液状とされた樹
脂製接着剤の流れ方向と対向する部位が、への字状ある
いは円弧状とされている。Further, in a preferred embodiment, the groove, the dam, or the conductor bump has a U-shape or an arc shape at a portion opposed to a flow direction of a liquid resin adhesive. .

【００１１】なお、本願発明は、上記接続対象物が半導
体チップの場合に好適に採用されるが、もちろんこれに
限らず、上記接続対象物が樹脂製、金属製、あるいはセ
ラミック製などの基板などであってもよい。The invention of the present application is preferably adopted when the object to be connected is a semiconductor chip. However, the present invention is not limited to this, and the object to be connected may be a substrate made of resin, metal, ceramic or the like. It may be.

【００１２】本願の第２の側面によれば、外部との電気
的な導通を図るための電極パッドが形成された所定の接
続対象物上に、樹脂製接着材を介して半導体チップが機
械的に接合された半導体装置の製造方法であって、上記
接続対象物として、上記半導体チップと上記接続対象物
とを接合する際に、液状とされた樹脂製接着剤が流動さ
せられた場合に、この樹脂製接着剤によって上記電極パ
ッドが覆われてしまわないようにするための保護手段が
設けられたものを用いることを特徴とする、半導体装置
の製造方法が提供される。[0012] According to the second aspect of the present invention, the semiconductor chip is mechanically interposed on the predetermined connection object on which the electrode pad for achieving electrical conduction with the outside is formed via the resin adhesive. In the method of manufacturing a semiconductor device joined to, when the connection object, when joining the semiconductor chip and the connection object, when the liquid resin adhesive is flowed, A method for manufacturing a semiconductor device, characterized by using a device provided with a protection means for preventing the electrode pad from being covered with the resin adhesive, is provided.

【００１３】好ましい実施の形態においては、上記保護
手段として上記電極パッドの周縁部近傍に形成された溝
部またはダム部、および／または上記電極パッドを覆う
ようにして突出形成された導体バンプが採用された接続
対象物が使用される。In a preferred embodiment, a groove or a dam formed near the periphery of the electrode pad and / or a conductor bump formed so as to cover the electrode pad are employed as the protection means. The connected object is used.

【００１４】ところで、上記半導体チップと上記接続対
象物との間に液状の樹脂製接着剤を介在させた状態で、
上記半導体チップ４を上記接続対象物に上方から押しつ
け、樹脂製接着剤を硬化させることにより上記半導体チ
ップと上記接続対象物とが機械的に接合されるのは上述
の通りである。このとき、液状とされた樹脂製接着剤が
半導体チップの周縁方向に流動させられ、上記接続対象
物の外部との電気的導通を図る部位である電極パッドが
覆われてしまうといった問題があるのも上述の通りであ
る。By the way, with a liquid resin adhesive interposed between the semiconductor chip and the object to be connected,
As described above, the semiconductor chip 4 and the connection target are mechanically joined by pressing the semiconductor chip 4 against the connection target from above and curing the resin adhesive. At this time, there is a problem that the liquid resin adhesive is caused to flow in the peripheral direction of the semiconductor chip, and the electrode pad, which is a portion for achieving electrical conduction with the outside of the connection target, is covered. Is also as described above.

【００１５】このため、本願発明のように、上記接続対
象物に保護手段、たとえば上記電極パッドの周縁近傍、
特に樹脂製接着剤の流動方向と対向する部位に上記溝部
またはダム部を形成すれば、上記電極パッドに向かって
流動してくる樹脂製接着剤を塞き止め、あるいは流動方
向を変化させることによって上記電極パッド上に樹脂製
接着剤が乗り上がってしまうことを回避することができ
る。For this reason, as in the present invention, the connection object is provided with protection means, for example, near the periphery of the electrode pad,
In particular, if the groove or dam portion is formed at a portion opposed to the flow direction of the resin adhesive, the resin adhesive flowing toward the electrode pad is blocked, or the flow direction is changed. It is possible to prevent the resin adhesive from getting on the electrode pad.

【００１６】また、上記保護手段として上記電極パッド
を覆うようにして導体バンプを形成した場合には、上記
電極パッドが上記導体バンプによって保護されるとと
も、周囲に比較して突出状とされた導体バンプには、樹
脂製接着剤が乗り上がりにくい。このため、上記接続対
象物が外部と電気的に導通接続される部分となる導体バ
ンプが樹脂製接着剤によって覆われてしまうことが回避
される。In the case where the conductor bump is formed so as to cover the electrode pad as the protection means, the electrode pad is protected by the conductor bump and has a protruding shape as compared with the surroundings. It is difficult for the resin adhesive to get on the conductor bumps. For this reason, it is possible to avoid that the conductor bump, which is a portion where the connection object is electrically connected to the outside, is covered with the resin adhesive.

【００１７】さらに、上記溝部、ダム部あるいは導体バ
ンプの樹脂製接着剤の流れ方向と対向する部位をへの字
状あるいは円弧状とすれば、上記電極パッドに向かって
流動してくる樹脂製接着剤を上記保護手段の左右に分断
して流動させることができ、これにより樹脂流れを上記
電極パッドを避けた流れとすることができる。すなわ
ち、上記電極パッドあるいは上記導体バンプ上に樹脂製
接着剤が乗り上げてしまうことがより良好に回避され、
上記接続対象物の外部との電気的導通を図るための接続
部位が樹脂製接着剤によって覆われてしまうことがより
良好に回避される。Further, if the groove, dam, or conductor bump is formed to have a U-shape or an arc shape in a portion opposed to the flow direction of the resin adhesive, the resin adhesive flowing toward the electrode pad is formed. The agent can be divided and flowed to the left and right sides of the protection means, whereby the resin flow can be made to avoid the electrode pads. That is, it is better avoided that the resin adhesive runs on the electrode pads or the conductor bumps,
It is better avoided that the connection site for establishing electrical conduction with the outside of the connection target is covered with the resin adhesive.

【００１８】このように、本願発明によれば、上記電極
パッドが接合時に使用される樹脂製接着剤によって覆わ
れてしまうことが上記保護手段によって回避されている
ので、たとえばワイヤボンディングなどによって、上記
接続対象物が外部と電気的に導通された場合には、ワイ
ヤと上記電極パッドとが良好に接続されることになる。
すなわち、樹脂製接着剤によって覆われていない電極パ
ッド（あるいは導体バンプ）上にワイヤボンディングを
行なうことになるので、ワイヤと電極パッド（あるいは
導体バンプ）とが接続された状態においては、これらの
間に樹脂製接着剤が介在することはなく、衝撃などの外
的な力によっては容易に短絡してしまわない良好な接続
状態が維持されている。As described above, according to the present invention, the electrode pad is prevented from being covered by the resin adhesive used at the time of bonding by the protection means. When the connection target is electrically connected to the outside, the wire and the electrode pad are connected well.
That is, wire bonding is performed on the electrode pads (or the conductor bumps) that are not covered with the resin adhesive, so that when the wires are connected to the electrode pads (or the conductor bumps), the wire bonding is performed between them. There is no resin adhesive interposed between them, and a good connection state is maintained in which short circuits are not easily caused by external force such as impact.

【００１９】もちろん、本側面においても、上記溝部ま
たはダム部は、各電極パッド毎に設けてもよく、複数の
電極パッドの群を１単位として、各単位毎に設けてもよ
い。これらの場合においては、上記溝部またはダム部に
よって余分な樹脂製接着剤を接続対象物の接合面の外部
に流動させて除去するように構成してもよい。もちろ
ん、上記溝部またはダム部を上記半導体チップが接合さ
れる領域を囲むようにして設けてもよい。また、上記溝
部またはダム部と上記導体バンプとを組み合わせて保護
手段を構成してもよい。Of course, also in this aspect, the groove or dam may be provided for each electrode pad, or a group of a plurality of electrode pads may be provided for each unit. In these cases, the groove or dam portion may be configured to allow excess resin adhesive to flow to the outside of the joint surface of the connection target and be removed. Of course, the groove or dam may be provided so as to surround a region where the semiconductor chip is bonded. Also, the protection means may be configured by combining the groove or dam portion with the conductor bump.

【００２０】本願発明のその他の特徴および利点は、添
付図面を参照して以下に行う詳細な説明によって、より
明らかとなろう。[0020] Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.

【００２１】[0021]

【発明の実施の形態】以下、本願発明の好ましい実施の
形態を、図面を参照して具体的に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be specifically described below with reference to the drawings.

【００２２】図１は、本願発明に係る半導体装置の一例
を表す全体斜視図であり、図２は、図１のII−II線に沿
う断面図であり、図３は、保護手段としての溝部の一例
を表す上記半導体装置の第１の半導体チップの要部拡大
斜視図であり、図４は、図３のIV−IV線に沿う断面図で
ある。なお、従来例を説明するために参照した図面に描
かれている部材および要素と同一のものには、同一の符
号を付してある。FIG. 1 is an overall perspective view showing an example of a semiconductor device according to the present invention, FIG. 2 is a sectional view taken along the line II-II of FIG. 1, and FIG. FIG. 4 is an enlarged perspective view of a main part of a first semiconductor chip of the semiconductor device showing one example, and FIG. 4 is a sectional view taken along line IV-IV in FIG. The same members and elements as those shown in the drawings referred to for describing the conventional example are denoted by the same reference numerals.

【００２３】図１および図２に示すように、上記半導体
装置１は、ポリイミド樹脂製などのフイルム基板２と、
このフイルム基板２上に実装される第１の半導体チップ
３と、この第１の半導体チップ３と電気的な導通が図ら
れた第２の半導体チップ４と、を備えて大略構成されて
いる。As shown in FIGS. 1 and 2, the semiconductor device 1 comprises a film substrate 2 made of a polyimide resin or the like.
The first semiconductor chip 3 mounted on the film substrate 2 and the second semiconductor chip 4 electrically connected to the first semiconductor chip 3 are roughly configured.

【００２４】図１および図２に良く表れているように、
上記フイルム基板２の両端部には、それぞれ４つの貫通
孔２０ａが形成されており、これらの貫通孔２０ａの形
成部位に対応して端子２０が計８個形成されている。こ
れらの各端子２０は、上記フイルム基板２の上面に形成
された薄膜端子部２２と上記フイルム基板２の下面に形
成されたボール状端子部２１とを有しており、もちろん
上記薄膜端子部２２と上記ボール状端子部２１とは上記
貫通孔２０ａを介して電気的に導通している。なお、上
記薄膜端子部２２は、たとえば銅などによって形成され
ており、上記ボール状端子部２１は、たとえばハンダな
どによって形成されている。また、上記貫通孔２０ａお
よび端子２０の形成部位および個数は適宜設計事項であ
る。As best seen in FIGS. 1 and 2,
Four through holes 20a are formed at both ends of the film substrate 2, respectively, and a total of eight terminals 20 are formed corresponding to the formation portions of these through holes 20a. Each of these terminals 20 has a thin film terminal portion 22 formed on the upper surface of the film substrate 2 and a ball-shaped terminal portion 21 formed on the lower surface of the film substrate 2. The ball-shaped terminal 21 is electrically connected to the ball-shaped terminal 21 via the through-hole 20a. The thin-film terminal section 22 is formed of, for example, copper or the like, and the ball-shaped terminal section 21 is formed of, for example, solder. The formation site and number of the through holes 20a and the terminals 20 are appropriately designed.

【００２５】図１および図２に良く表れているように、
上記第１の半導体チップ３は、主面３ａの側縁部に列状
に並ぶようにして、たとえばアルミニウム製などの２種
類の電極パッド３０，３１がそれぞれ複数個ずつ形成さ
れており、これらの電極パッド３０，３１のうち、電極
パッド３１上には、金製バンプ３１ａが形成されてい
る。これらの金製バンプ３１ａは、たとえば半導体チッ
プがウエハの段階において金メッキを施すなどして形成
される。また、図３および図４に良く表れているよう
に、上記第１の半導体チップ３の表面には、上記電極パ
ッド３０が外部に臨むようにして保護膜３３が形成され
ており、上記各電極パッド３０の周縁近傍には、これら
の電極パッド３０を囲むようにして保護膜３３が形成さ
れていない矩形枠状の溝部３４が形成されている。この
ように構成された第１の半導体チップ３においては、上
記各電極パッド３０と上記フイルム基板２の各端子２０
とがワイヤ５を介して接続されて上記フイルム基板２と
上記第１の半導体チップ３との電気的な導通が図られて
いる。もちろん、上記各電極パッド３０，３１は、上記
第１の半導体チップ３の主面３ａに形成された回路素子
（図示略）と導通している。なお、図面上は表れていな
いが、上記第１の半導体チップ３は、たとえばエポキシ
などの樹脂によって上記フイルム基板２と接合されてい
る。As best seen in FIGS. 1 and 2,
The first semiconductor chip 3 is formed with a plurality of two types of electrode pads 30 and 31 made of, for example, aluminum, each of which is arranged in a row at the side edge of the main surface 3a. Of the electrode pads 30, 31, a gold bump 31a is formed on the electrode pad 31. These gold bumps 31a are formed, for example, by applying gold plating on a semiconductor chip at the stage of a wafer. 3 and 4, a protective film 33 is formed on the surface of the first semiconductor chip 3 so that the electrode pads 30 face the outside. A rectangular frame-shaped groove portion 34 on which the protective film 33 is not formed is formed so as to surround these electrode pads 30 in the vicinity of the periphery of. In the first semiconductor chip 3 thus configured, each of the electrode pads 30 and each of the terminals 20 of the film substrate 2 are formed.
Are connected via a wire 5 so that electrical continuity between the film substrate 2 and the first semiconductor chip 3 is achieved. Of course, the electrode pads 30 and 31 are electrically connected to a circuit element (not shown) formed on the main surface 3a of the first semiconductor chip 3. Although not shown in the drawing, the first semiconductor chip 3 is joined to the film substrate 2 by a resin such as epoxy, for example.

【００２６】図１および図２に良く表れているように、
上記第２の半導体チップ４は、主面４ａの側縁部に列状
に並ぶようにして複数の電極パッド４０が形成されてお
り、これらの電極パッド４０上には、金製バンプ４０ａ
がそれぞれ形成されている。そして、これらの金製バン
プ４０ａと上記第１の半導体チップ３の金製バンプ３１
ａとは、電気的に接続されているとともに、上記各半導
体チップ３，４どうしは、たとえばエポキシ樹脂などの
樹脂製接着剤６を介して機械的に接合されている。もち
ろん、上記各電極パッド４０は、上記第２の半導体チッ
プ４の主面４ａに形成された回路素子（図示略）と導通
している。As best seen in FIGS. 1 and 2,
The second semiconductor chip 4 has a plurality of electrode pads 40 formed in a row at a side edge of the main surface 4a, and gold bumps 40a are formed on these electrode pads 40.
Are formed respectively. Then, the gold bumps 40a and the gold bumps 31 of the first semiconductor chip 3 are formed.
a, the semiconductor chips 3 and 4 are mechanically joined to each other via a resin adhesive 6 such as an epoxy resin. Of course, each of the electrode pads 40 is electrically connected to a circuit element (not shown) formed on the main surface 4a of the second semiconductor chip 4.

【００２７】なお、上記フイルム基板２、上記各半導体
チップ３，４、および金線ワイヤ５は、エポキシなどの
樹脂を用いた金型成形によって形成された樹脂パッケー
ジ６１によって保護されている。The film substrate 2, the semiconductor chips 3 and 4, and the gold wire 5 are protected by a resin package 61 formed by molding using a resin such as epoxy.

【００２８】このように構成された半導体装置１におい
ては、上記各半導体チップ３，４どうしの電気的な接続
および機械的な接合は、たとえば以下のようにして行な
われる。In the semiconductor device 1 thus configured, the electrical connection and the mechanical connection between the semiconductor chips 3 and 4 are performed, for example, as follows.

【００２９】すなわち、図５に示すように、ヒータを備
えた支持台９上に載置された長尺状の樹脂フイルム２Ａ
上に、第１の半導体チップ３を実装し、この半導体チッ
プ３が数百度程度に加熱された状態で行なわれる。この
状態において、まず、上記第１の半導体チップ３の主面
３ａに、たとえば液状あるいは固体状の熱硬化性の樹脂
製接着剤６などを塗布あるいは貼着する。このときに使
用される樹脂製接着剤６としては、上記第１の半導体チ
ップ３が加熱されている温度程度、あるいはこれ以下の
温度で硬化する、たとえばエポキシ樹脂やフェノール樹
脂などが好適に採用される。That is, as shown in FIG. 5, an elongated resin film 2A placed on a support 9 provided with a heater.
The first semiconductor chip 3 is mounted thereon, and the operation is performed in a state where the semiconductor chip 3 is heated to about several hundred degrees. In this state, first, for example, a liquid or solid thermosetting resin adhesive 6 or the like is applied or adhered to the main surface 3a of the first semiconductor chip 3. As the resin adhesive 6 used at this time, an epoxy resin, a phenol resin, or the like, which is cured at a temperature at which the first semiconductor chip 3 is heated or at a temperature lower than this temperature, is preferably used. You.

【００３０】そして、図５に示すように、樹脂製接着剤
６が液体の状態において、上記第２の半導体チップ４を
上記第１の半導体チップ３に上方から押しつけて各半導
体チップ３，４のそれぞれバンプ３１ａ，４０ａを接触
させる。これにより、上記各半導体チップ３，４どうし
が導通接続される。このとき、液状とされた樹脂製接着
剤６が上記第１の半導体チップ３の周縁方向に追いやら
れる恰好とされ、上記第１の半導体チップ３の周縁部に
形成された電極パッド３０の方向に向かって樹脂製接着
剤６の一部が流動する。Then, as shown in FIG. 5, when the resin adhesive 6 is in a liquid state, the second semiconductor chip 4 is pressed against the first semiconductor chip 3 from above, and the The bumps 31a and 40a are brought into contact with each other. Thus, the semiconductor chips 3 and 4 are electrically connected to each other. At this time, the resin adhesive 6 in a liquid state is repelled in the peripheral direction of the first semiconductor chip 3, and is moved toward the electrode pad 30 formed on the peripheral portion of the first semiconductor chip 3. A part of the resin adhesive 6 flows toward the resin.

【００３１】ところで、本実施形態の半導体装置１おい
ては、上記第１の半導体チップ３の電極パッド３０の周
縁近傍には、保護手段としての上記溝部３４が形成され
ている（図３および図４参照）。このため、上記電極パ
ッド３０に向かって流動してくる樹脂製接着剤６は、上
記溝部３４によってくい止められる。すなわち、流動す
る樹脂製接着剤６が上記溝部３４に入り込み、この溝部
３４内を流動することによって、上記電極パッド３０を
避けて流動させることができる。このように、本実施形
態では、樹脂製接着剤６の流動方向を変化させることに
よって、上記電極パッド上に樹脂製接着剤６が乗り上が
ってしまうことを回避することができる。By the way, in the semiconductor device 1 of the present embodiment, the groove 34 as a protection means is formed in the vicinity of the periphery of the electrode pad 30 of the first semiconductor chip 3 as shown in FIGS. 4). Therefore, the resin adhesive 6 flowing toward the electrode pad 30 is blocked by the groove 34. That is, the flowing resin adhesive 6 enters the groove 34 and flows in the groove 34, so that the resin adhesive 6 can flow while avoiding the electrode pad 30. As described above, in the present embodiment, by changing the flow direction of the resin adhesive 6, it is possible to prevent the resin adhesive 6 from getting on the electrode pad.

【００３２】また、樹脂製接着剤６として、上記第１の
半導体チップ３が加熱されている温度程度、あるいはそ
れ以下の温度で硬化するものを用いた場合には、樹脂製
接着剤６が上記溝部３４に入り込み、この溝部３４内を
流動している間にも硬化し始めて粘性が高くなる。この
ため、上記電極パッド３０上に樹脂製接着剤６が乗り上
がる前に、上記溝部３４において樹脂製接着剤６の流動
が停滞し、ついには硬化することとなる。このように、
樹脂製接着剤６として上記第１の半導体チップ３が加熱
されている温度程度で硬化するものを用いた場合には、
より良好に上記電極パッド３０が樹脂製接着剤６によっ
て覆われてしまうことを回避することができる。When the resin adhesive 6 is cured at a temperature at which the first semiconductor chip 3 is heated or at a temperature lower than the heating temperature, the resin adhesive 6 is used as the resin adhesive 6. It enters the groove 34 and starts to harden while flowing in the groove 34, and the viscosity increases. Therefore, before the resinous adhesive 6 rides on the electrode pad 30, the flow of the resinous adhesive 6 stagnates in the groove 34 and finally hardens. in this way,
In the case where the resin adhesive 6 is cured at about the temperature at which the first semiconductor chip 3 is heated,
It is possible to better prevent the electrode pad 30 from being covered with the resin adhesive 6.

【００３３】以上に説明したことから明らかなように、
本実施形態によれば、上記電極パッド３０が樹脂製接着
剤６によって覆われてしまうことが上記保護手段として
の溝部３４によって回避されているので、引き続いて行
なわれるワイヤボンディングを所望通りに行なうことが
できる。このため、ワイヤボンディングによって、上記
第１の半導体チップ３が上記フイルム基板２と電気的に
導通された場合には、ワイヤ５の端部と上記電極パッド
３０とが良好に接続されることになる。すなわち、樹脂
製接着剤６によって覆われていない電極パッド３０上に
ワイヤボンディングを行なうことになるので、ワイヤ５
と電極パッド３０とが接続された状態においては、これ
らの間に樹脂製接着剤６が介在することはなく、衝撃な
どの外的な力によっては容易に短絡しない良好な接続状
態が維持されている。As is clear from the above description,
According to the present embodiment, the electrode pad 30 is prevented from being covered with the resin adhesive 6 by the groove 34 as the protection means, so that the subsequent wire bonding can be performed as desired. Can be. Therefore, when the first semiconductor chip 3 is electrically connected to the film substrate 2 by wire bonding, the end of the wire 5 and the electrode pad 30 are connected well. . That is, since wire bonding is performed on the electrode pads 30 not covered with the resin adhesive 6, the wire 5
When the electrode pad 30 and the electrode pad 30 are connected to each other, the resin adhesive 6 does not intervene therebetween, and a good connection state in which a short circuit is not easily caused by an external force such as an impact is maintained. I have.

【００３４】もちろん、本願発明は、上述した実施形態
には限定されない。たとえば、上記保護手段としての溝
部３４の形態は、図６に例示したような形態であっても
よい。すなわち、環状の溝部３４ａ、円弧状の溝部３４
ｂ、コの字状の溝部３４ｃ、あるいは一文字状の溝部３
４ｄなどであってもよい。なお、上記円弧状の溝部３４
ｂ、コの字状の溝部３４ｃ、あるいは一文字状の溝部３
４ｄにおいては、これらの溝部３４ａ〜３４ｃを、上記
電極パッド３０の周縁における樹脂製接着剤６が流動し
てくる方向と対向する部位の近傍に設けることが好まし
い。Of course, the present invention is not limited to the embodiment described above. For example, the form of the groove 34 as the protection means may be the form illustrated in FIG. That is, the annular groove 34a and the arc-shaped groove 34
b, U-shaped groove 34c, or one-character groove 3
4d or the like. The arc-shaped groove 34
b, U-shaped groove 34c, or one-character groove 3
In 4d, it is preferable to provide these grooves 34a to 34c in the vicinity of a portion of the periphery of the electrode pad 30 facing the direction in which the resin adhesive 6 flows.

【００３５】また、上記保護手段としては、図７に例示
したように、上記電極パッド３０を覆うようにして形成
されれ導体バンプ３５ａ〜３５ｄであってもよい。すな
わち、平面視形状が三角形の導体バンプ３５ａ、長円形
の導体バンプ３５ｂ、矩形の導体バンプ３５ｃ、あるい
は五角形の導体バンプ３５ｄなどであってもよい。これ
らのいずれの導体バンプ３５ａ〜３５ｄにおいても、樹
脂製接着剤６が流動してくる方向と対向する部位が、く
の字状あるいは円弧状となるように配置される。The protection means may be conductor bumps 35a to 35d formed so as to cover the electrode pads 30, as illustrated in FIG. That is, a conductor bump 35a having a triangular shape in plan view, a conductor bump 35b having an oval shape, a conductor bump 35c having a rectangular shape, or a conductor bump 35d having a pentagonal shape may be used. In any of these conductor bumps 35a to 35d, a portion facing the direction in which the resin adhesive 6 flows is arranged so as to have a U shape or an arc shape.

【００３６】このような保護手段では、上記電極パッド
３０が上記導体バンプ３５ａ〜３５ｄによって保護され
るととも、周りの部分に比較して突出状とされた導体バ
ンプ３５ａ〜３５ｄには樹脂製接着剤６が乗り上がりに
くいといった利点が得られる。このため、上記第１の半
導体チップ３のフイルム基板２と電気的に導通接続され
る部分となる導体バンプ３５ａ〜３５ｄが樹脂製接着剤
６によって覆われてしまうことが回避される。特に、上
記導体バンプの樹脂製接着剤６の流れ方向と対向する部
位をへの字状あるいは円弧状とすれば、上記電極パッド
３０に向かって流動してくる樹脂製接着剤６を上記導体
バンプ３５ａ〜３５ｄの左右に分断して流動させること
ができ、これにより樹脂流れを上記電極パッド３０を避
けた流れとすることができる。すなわち、上記電極パッ
ド３０あるいは上記導体バンプ３５ａ〜３５ｄ上に樹脂
製接着剤６が乗り上げてしまうことがより良好に回避さ
れ、上記第１の半導体チップ３と上記フイルム基板２と
の電気的導通を良好なものとすることができる。According to such a protection means, the electrode pads 30 are protected by the conductor bumps 35a to 35d, and the resin bumps are formed on the conductor bumps 35a to 35d which are protruded compared to the surrounding portions. The advantage that the agent 6 is hard to get over is obtained. For this reason, it is possible to prevent the conductive bumps 35a to 35d, which are electrically conductively connected to the film substrate 2 of the first semiconductor chip 3, from being covered with the resin adhesive 6. In particular, if the portion of the conductive bump opposite to the flow direction of the resin adhesive 6 is formed in a U-shape or an arc shape, the resin adhesive 6 flowing toward the electrode pad 30 will be removed. The flow can be divided and flown to the left and right of 35a to 35d, so that the resin flow can be a flow avoiding the electrode pad 30. That is, the resin adhesive 6 is prevented from running on the electrode pads 30 or the conductor bumps 35a to 35d, and the electrical connection between the first semiconductor chip 3 and the film substrate 2 is improved. It can be good.

【００３７】また、上記保護手段としては、図８および
図９に示したように、溝部３４と導体バンプ３５とを組
み合わせたものであってもよく、図示しないが上記電極
パッド３０の方向に流動してくる樹脂製接着剤６の流れ
を塞き止めるようにして設けられたダム部であってもよ
い。As shown in FIGS. 8 and 9, the protection means may be a combination of a groove 34 and a conductor bump 35. Although not shown, the protection means may flow in the direction of the electrode pad 30. It may be a dam portion provided so as to block the flow of the resin adhesive 6 coming up.

【００３８】さらに、上記溝部またはダム部は、図１０
（ａ）〜（ｃ）に示すような構成であってもよい。すな
わち、図１０（ａ）に示すように、上記溝部（ダム部）
３４が上記第１の半導体チップ３における上記第２の半
導体チップ４を接合すべき領域４Ａを囲むようにして形
成されたものも本願発明の適用範囲である。また、図１
０（ｂ）および（ｃ）に示すように、複数個の電極パッ
ド３０の群を１単位として、各単位毎に上記溝部（ダム
部）３４を形成したものであってもよい。特に、図１０
（ｃ）に示した保護手段においては、上記溝部（ダム
部）３４の端部が上記第１の半導体チップ３の周縁端に
まで達しているので、流動してくる樹脂の方向を上記溝
部（ダム部）３４によって変更して流動樹脂を上記第１
の半導体チップ３の側面などに排除することができると
いった利点が得られる。Further, the above-mentioned groove or dam portion is formed as shown in FIG.
Configurations shown in (a) to (c) may be used. That is, as shown in FIG. 10A, the groove (dam portion)
The present invention is also applicable to the case where the reference numeral 34 is formed so as to surround the region 4A of the first semiconductor chip 3 to which the second semiconductor chip 4 is to be joined. FIG.
As shown in FIGS. 0 (b) and (c), a group of a plurality of electrode pads 30 may be defined as one unit, and the groove (dam) 34 may be formed for each unit. In particular, FIG.
In the protection means shown in (c), since the end of the groove (dam) 34 reaches the peripheral edge of the first semiconductor chip 3, the direction of the flowing resin is changed to the groove ( The fluid resin is changed by the dam part 34 to
Of the semiconductor chip 3 can be eliminated.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本願発明に係る半導体装置の一例を表す全体斜
視図である。FIG. 1 is an overall perspective view illustrating an example of a semiconductor device according to the present invention.

【図２】図１のII−II線に沿う断面図である。FIG. 2 is a cross-sectional view taken along the line II-II of FIG.

【図３】保護手段としての溝部の一例を表す上記半導体
装置の第１の半導体チップの要部拡大斜視図である。FIG. 3 is an enlarged perspective view of a main part of a first semiconductor chip of the semiconductor device, showing an example of a groove as a protection means.

【図４】図３のIV−IV線に沿う断面図である。FIG. 4 is a sectional view taken along line IV-IV in FIG. 3;

【図５】上記第１の半導体チップと第２の半導体チップ
とを接合している状態を表す図である。FIG. 5 is a diagram showing a state in which the first semiconductor chip and the second semiconductor chip are joined.

【図６】保護手段としての溝部の変形例を表す図であ
る。FIG. 6 is a diagram illustrating a modification of a groove as a protection unit.

【図７】保護手段としてのさまざまな導体バンプを表す
図である。FIG. 7 is a diagram showing various conductor bumps as protection means.

【図８】上記溝部と上記導体バンプとが組み合わされた
保護手段の一例を表す図である。FIG. 8 is a diagram illustrating an example of a protection unit in which the groove and the conductor bump are combined.

【図９】図８のIX−IX線に沿う断面図である。FIG. 9 is a sectional view taken along line IX-IX in FIG. 8;

【図１０】保護手段としての溝部およびダム部の変形例
を表す図である。FIG. 10 is a diagram illustrating a modification of a groove and a dam as protection means.

【図１１】従来例に係る半導体装置の一例を表す断面図
である。FIG. 11 is a cross-sectional view illustrating an example of a semiconductor device according to a conventional example.

【図１２】従来例の半導体装置において、フイルム基板
上に実装された半導体チップ上に別の半導体チップを接
合している状態を表す図である。FIG. 12 is a diagram illustrating a state in which another semiconductor chip is bonded to a semiconductor chip mounted on a film substrate in a conventional semiconductor device.

【図１３】図１２において一点鎖線Ａで囲まれた領域の
拡大図である。FIG. 13 is an enlarged view of a region surrounded by a chain line A in FIG.

【符号の説明】[Explanation of symbols]

１ 半導体装置 ３ 第１の半導体チップ ４ 第２の半導体チップ ６ 樹脂製接着剤 ３０ 電極パッド ３４（３４ａ〜３４ｄ） 溝部（保護手段としての） ３５ａ〜３５ｄ 導体バンプ（保護手段としての） DESCRIPTION OF SYMBOLS 1 Semiconductor device 3 1st semiconductor chip 4 2nd semiconductor chip 6 Resin adhesive 30 Electrode pad 34 (34a-34d) Groove (as protection means) 35a-35d Conductor bump (as protection means)

Claims (10)

【特許請求の範囲】[Claims] 【請求項１】 外部との電気的な導通を図るための電極
パッドが形成された所定の接続対象物上に、樹脂製接着
材を介して半導体チップが機械的に接合された半導体装
置であって、 上記接続対象物には、上記半導体チップと上記接続対象
物とを接合する際に、液状とされた樹脂製接着剤が流動
させられた場合に、この樹脂製接着剤によって上記電極
パッドが覆われてしまわないようにするための保護手段
が設けられていることを特徴とする、半導体装置。1. A semiconductor device in which a semiconductor chip is mechanically bonded via a resin adhesive on a predetermined connection object on which an electrode pad for achieving electrical conduction with the outside is formed. In the connection object, when the resin adhesive in a liquid state is flowed when the semiconductor chip and the connection object are joined, the electrode pad is formed by the resin adhesive. A semiconductor device provided with a protection means for preventing the semiconductor device from being covered. 【請求項２】 上記保護手段は、上記電極パッドの周縁
部近傍に形成された溝部またはダム部である、請求項１
に記載の半導体装置。2. The protection device according to claim 1, wherein the protection means is a groove or a dam formed near the periphery of the electrode pad.
3. The semiconductor device according to claim 1. 【請求項３】 上記溝部またはダム部は、各電極パッド
毎に設けられている、請求項２に記載の半導体装置。3. The semiconductor device according to claim 2, wherein said groove or dam is provided for each electrode pad. 【請求項４】 上記溝部またはダム部は、複数個の電極
パッドの群を１単位として、各単位毎に設けられてい
る、請求項２に記載の半導体装置。4. The semiconductor device according to claim 2, wherein said groove or dam is provided for each unit, with a group of a plurality of electrode pads as one unit. 【請求項５】 上記溝部またはダム部は、上記半導体チ
ップが接合される領域を囲むようにして設けられてい
る、請求項２に記載の半導体装置。5. The semiconductor device according to claim 2, wherein said groove or dam is provided so as to surround a region where said semiconductor chip is joined. 【請求項６】 上記保護手段は、上記電極パッドを覆う
ようにして突出形成された導体バンプである、請求項１
ないし５のいずれかに記載の半導体装置。6. The protection means according to claim 1, wherein said protection means is a conductive bump formed so as to cover said electrode pad.
6. The semiconductor device according to any one of items 5 to 5. 【請求項７】 上記溝部、ダム部、または導体バンプ
は、液状とされた樹脂製接着剤の流れ方向と対向する部
位が、への字状あるいは円弧状とされている、請求項２
ないし６のいずれかに記載の半導体装置。7. The groove portion, the dam portion, or the conductor bump, wherein a portion facing the flow direction of the liquid resin adhesive is formed in a U-shape or an arc shape.
7. The semiconductor device according to any one of items 6 to 6. 【請求項８】 上記接続対象物は、半導体チップであ
る、請求項１ないし７のいずれかに記載の半導体装置。8. The semiconductor device according to claim 1, wherein said connection target is a semiconductor chip. 【請求項９】 外部との電気的な導通を図るための電極
パッドが形成された所定の接続対象物上に、樹脂製接着
材を介して半導体チップが機械的に接合された半導体装
置の製造方法であって、 上記接続対象物として、上記半導体チップと上記接続対
象物とを接合する際に、液状とされた樹脂製接着剤が流
動させられた場合に、この樹脂製接着剤によって上記電
極パッドが覆われてしまわないようにするための保護手
段が設けられたものを用いることを特徴とする、半導体
装置の製造方法。9. Manufacturing of a semiconductor device in which a semiconductor chip is mechanically joined via a resin adhesive on a predetermined connection object on which an electrode pad for achieving electrical conduction with the outside is formed. The method according to claim 1, wherein, when joining the semiconductor chip and the connection object as the connection object, when the resin adhesive in a liquid state is flown, the electrode is formed by the resin adhesive. A method for manufacturing a semiconductor device, comprising using a device provided with a protection means for preventing a pad from being covered. 【請求項１０】 上記保護手段として、上記電極パッド
の周縁部近傍に形成された溝部またはダム部、および／
または上記電極パッドを覆うようにして突出形成された
導体バンプが採用された接続対象物が使用される、請求
項９に記載の半導体装置の製造方法。10. A protection device comprising: a groove or a dam formed near the periphery of the electrode pad;
10. The method for manufacturing a semiconductor device according to claim 9, wherein a connection target adopting a conductive bump formed so as to cover the electrode pad is used.
JP30512797A 1997-11-07 1997-11-07 Semiconductor device and method of manufacturing the same Expired - Fee Related JP3362249B2 (en)

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