JP3457547B2 - Semiconductor device, method of manufacturing the same, and film carrier - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a semiconductor element mounted thereon, and more particularly to a semiconductor device which does not occupy an area when mounted on a circuit board and is suitable for high-density mounting, and a method for manufacturing the same. It relates to a film carrier.

[0002]

2. Description of the Related Art P-BGA and TB are shown in FIGS.
The structural example of the conventional package of GA is shown. The general structure of the BGA is that the LSI chip 32 is connected to the wiring board (printed circuit board) 36 called an interposer by the gold wire 33 by wire bonding, and the resin molding is performed by the molding resin 34 to form a grid pattern on the back surface of the board through the wiring after resin molding. The solder balls 37 of the arranged external terminals are connected. Reference numeral 31 is a through hole, and 35 is a solder resist.

A printed circuit board mounted with an LSI is
Although it is a P-BGA, a T-BGA uses a TAB tape that enables high-density wiring. T-BGA is a technology that can realize multiple pins. The T-BGA uses a TAB tape capable of fine wiring, and a projection called a bump formed on a chip of a semiconductor device and a copper foil pattern on a tape base material (polyimide) 41 are used to form a tape base material opening portion. The formed inner leads are joined by thermocompression bonding. In order to electrically and physically protect the chip 32 and the leads from bad environment such as external force, moisture and contaminants, resin 42 is potted on the chip surface and the leads. Resin 4
2 is cured by heating after potting. Next, the stiffener 39 is attached via the adhesive 38, and finally the solder balls 37 are attached to form a T-BGA form.

In T-BGA, firstly, a polyimide tape is used for the substrate, secondly, a reinforcing plate called a stiffener needs to be attached, and thirdly, finally, solder balls are made to have multiple pins. Therefore, the number of manufacturing steps is increased, and the cost is increased. In addition, in the conventional P-BGA and T-BGA, the area occupied by the outer leads laid out from the inner leads is larger than the chip size, so that the size of the package is large, and the occupancy during mounting is large. The area becomes large.

[0005]

SUMMARY OF THE INVENTION As described above, the conventional B
The form of the package used as the GA has the following problems. That is, since the polyimide tape is used for the substrate, the price of the substrate tape is directly reflected on the price of the product. Also, in attaching the solder ball to the reinforcing plate (stiffener) or the terminal having a large number of pins, the material and process are required, and the product cost is increased. Further, the area occupied by the routed external leads is larger than the chip size, and the size of the package is large.

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to solve the above-mentioned conventional problems, and to provide a low-cost and compact semiconductor device, its manufacturing method, and a film carrier.

[0007]

In order to solve this problem, the present invention has the following configuration.

[0008]

[0009]

[0010]

[0011] The semiconductor device according to claim 1, formed a semiconductor element bumps are arranged in two rows facing the surface, and leads connected to the bump, the substantially entire surface of the semiconductor element in a state of buried lead And a wiring circuit and an electrode pad extended from the lead, and the wiring circuit protrudes from the outer peripheral edge of the sealing resin and is routed to the side surface and the back surface of the semiconductor element. It is characterized in that an electrode pad is formed on.

In this way, the bumps facing the surface 2
Semiconductor elements arranged in rows, leads connected to bumps, sealing resin formed on substantially the entire surface of the semiconductor element with the leads buried, wiring circuits and electrode pads extended from the leads Since the wiring circuit protrudes from the outer peripheral edge of the sealing resin and is routed to the side and back surfaces of the semiconductor element, and the electrode pad is formed on one side surface of the semiconductor element, it can be mounted vertically on the board. Therefore, the mounting area can be further reduced.

A method of manufacturing a semiconductor device according to claim 2 is
A sheet with leads, wiring circuits and electrode pads formed on a sheet having the same size as a semiconductor element and having openings, and the openings having substantially the same shape as the openings of the sheet are formed so that the openings of the sheets match each other. To form a film carrier, connecting leads and bumps on the semiconductor element, covering the semiconductor element with a sealing resin, and removing the film and sheet to form the wiring circuit and electrode pads. And a step of transferring to a resin surface.

As described above, the leads, the wiring circuits, and the electrode pads are formed on the sheet having the same size as the semiconductor element and the openings, and the films having the openings having substantially the same shape as the openings of the sheet are mutually formed. A sheet is mounted so that the openings are aligned to form a film carrier, the leads and bumps on the semiconductor element are connected, the semiconductor element is covered with a sealing resin, and the film and sheet are removed to remove the wiring circuit and electrode pads. Is transferred to the resin surface, resulting in a compact package form. Also, conventional TCP
(Tape Carrier Package) manufacturing line is used, and since the tape base material is not used as the substrate material of the package, a low-cost package can be supplied. In addition, since the film as a carrier is not the base material of the package but the material of the mediating means for transferring the sheet to the resin surface, it can be used any number of times, the material used can be reduced, and energy and the environment can be considered. be able to.

A method of manufacturing a semiconductor device according to claim 3 is
In the second aspect , the bumps are arranged near the center of the semiconductor element, and the wiring circuit is routed to form electrode pads having a wider space and a larger area than the arrangement pitch of the bumps around the semiconductor element. In this way, by arranging the bumps near the center of the semiconductor element and laying out the wiring circuit, electrode pads with a wider space and wider area than the pitch of the bumps are formed around the semiconductor element. And the insulation distance can be secured.

A method of manufacturing a semiconductor device according to claim 4 is
In the second aspect , the wiring circuit and the electrode pad have a positional relationship facing the surface of the semiconductor element, and the bump is arranged around the semiconductor element. In this way, the wiring circuit and the electrode pads are in a positional relationship facing the surface of the semiconductor element and the bumps are arranged around the semiconductor element. Therefore, the interval between the electrode pads can be widened according to the pitch of the bumps. The circuit can be shortened.

A method of manufacturing a semiconductor device according to claim 5 is
In claim 2 , the wiring circuit and the electrode pad are in a positional relationship of facing the surface of the semiconductor element through the sheet,
The sheet is divided into four sides of the semiconductor element and attached to the film. In this way, the wiring circuit and the electrode pad are in a positional relationship of facing the semiconductor element surface through the sheet, and the sheet is divided into four sides of the semiconductor element and mounted on the film, so that between the electrode pad and the semiconductor element surface. An injection space for the sealing resin, which is equal to or larger than the thickness of the sheet, is formed, and the wiring circuit and the electrode pad can be reliably fixed. Further, when the wiring circuit and the electrode pad are transferred to the resin surface by peeling the film and the sheet from the resin surface of the sealing resin, the sheet is divided into four sides of the semiconductor element, so that the sheet is peeled off. It will be easier.

A method of manufacturing a semiconductor device according to claim 6 is
In the second aspect , the bumps are arranged in two rows facing each other on the semiconductor element, the wiring circuit is routed to the side surface and the back surface of the semiconductor element, and the electrode pad is transferred to one side surface of the semiconductor element. In this way, the bumps are arranged in two rows facing each other on the semiconductor element, the wiring circuit is routed to the side surface and the back surface of the semiconductor element, and the electrode pad is transferred to one side surface of the semiconductor element, so that vertical mounting is possible and the substrate can be mounted. The mounting area of can be made smaller.

According to a seventh aspect of the present invention, there is provided a film carrier having a sheet having the same size as a semiconductor element and having an opening, on which leads, wiring circuits and electrode pads are formed, and an opening having substantially the same shape as the opening of the sheet. It is composed of a film on which a sheet is mounted such that openings of the sheets coincide with each other. By using the film carrier configured as described above, a semiconductor device having a compact structure can be manufactured. On this occasion,
The leads are connected to the bumps on the semiconductor element, the semiconductor element is covered with a sealing resin, and the film and sheet are removed to transfer the wiring circuit and the electrode pads onto the resin surface. As described above, the film is not the base material of the package but the material of the mediating means for transferring the sheet to the resin surface, and thus it is reusable and contributes to resource saving.

[0020]

BEST MODE FOR CARRYING OUT THE INVENTION A first embodiment of the present invention will be described below with reference to FIGS. 1 is a plan view of a semiconductor device according to an embodiment of the present invention at a manufacturing stage, FIG.
3A to 3D are process cross-sectional views showing a method for manufacturing a semiconductor device according to an embodiment of the present invention, and FIGS.
4A is a plan view of the semiconductor device according to the embodiment of the present invention, FIG. 4B is a cross-sectional view thereof, and FIG.
6A and 6B are plan views of the manufacturing process of the film carrier according to the embodiment of the present invention, FIG. 6A is a view seen from the front surface of the film carrier, and FIG. 6B is a view seen from the back surface thereof. is there.

As shown in FIGS. 1 and 4, this semiconductor device is manufactured by the film carrier 22. The film carrier 22 has the same size as the chip (semiconductor element) 11, has an opening, and has the inner lead 13, the wiring circuit 18, and the electrode pad 17 formed on the sheet 14.
And the film 19 on which the sheet 14 is mounted so that the openings (device holes) 21 have substantially the same shape as the opening of the sheet 14 and are aligned with each other. Further, the semiconductor device includes a chip 11 having bumps 12 on its surface and bumps 1
2, the inner lead 13 and the liquid potting resin (sealing resin) 25 formed on almost the entire surface of the chip 11 with the inner lead 13 embedded, and the inner lead 13 outside the sealing resin 25. Wiring circuit 18 extended to the peripheral position and exposed on the surface of sealing resin 25
And an electrode pad 17. In this case, the inner lead 13, the wiring circuit 18, and the electrode pad 17 are formed on the sheet 14, and the film 19 and the sheet 1 are formed.
The wiring circuit 18 and the electrode pad 17 are transferred to the sealing resin 25 by peeling off the wiring 4. Further, since the bumps 12 are located near the center of the chip 11 and the wiring circuit 18 is routed, the electrode pads 17 having a wider space and wider area than the arrangement pitch of the bumps 12 are formed on the chip 11.
Has formed around. As the sealing resin 25, a thermosetting epoxy resin or the like is used.

Next, a method of manufacturing the semiconductor device having the above structure will be described. The film carrier 22 is formed before the manufacturing process of the semiconductor device. As shown in FIGS. 5 and 6,
A film (tape base material) 19 having a thickness of 75 μm and a film width of 35 mm, 48 mm, or 70 mm is used.
The material of the film is polyimide. Device holes 21 are formed in the film 19 to connect the inner leads 13 and the bumps 12 on the chip 11 to the film 19. The electrode pad 17 and the wiring circuit 18 are formed on the sheet 14 mounted on the film 19 with the electrolytic copper foil. The material of the sheet is fluororesin (thickness 75 μm-25
μm, optimum thickness is 50 μm, tensile strength is about 5
0 MPa) or polyimide (thickness 75 μm to 2)
The thickness may be 5 μm, and the optimum thickness may be 50 μm. The copper foil and the sheet 14 are laminated with a peelable adhesive. The copper foil laminated on the sheet 14 is plated with tin. When the side surface and the back surface of the chip need to be routed, the solder resist 15 is applied on the tin-plated copper foil (see FIG. 16A). Seat 14
The device hole 21 is aligned on the film 19 in the same manner, and the film carrier 22 is mounted by an epoxy adhesive to a degree such that the film carrier 22 can be peeled off.

Next, a semiconductor device is manufactured using the film carrier 22. First, as shown in FIG.
Inner leads 1 on the formed film carrier 22
3 and the gold bump 12 on the chip 11 are bonded to each other. The gold bump 12 is located near the center of the chip. At this time, the wiring circuit 18 and the electrode pad 17 formed on the sheet 14 are in a positional relationship of facing the chip 11, and are in a state of overlapping with the chip 11.

Then, as shown in FIGS. 2 (b) to 2 (d), the inner leads 13 and the gold bumps 12 are thermocompression bonded under the temperature of the bonding tool 23 of about 500 ° C., and a gold-tin eutectic bond is formed. Are joined by. Inner lead 1
3, the forming is formed at this time, and a space where the sealing resin 25 can be filled is formed between the chip 11 and the sheet 14. The bonding method is batch gang bonding.

Next, as shown in FIG. 3E, a thermosetting epoxy sealing resin 25 is applied to cover the chip 11 joined to the film carrier 22 through the inner leads 13. The application is performed by drawing with a dispense method using the resin application nozzle 24. The sealing resin 25 is filled between the chip 11 and the sheet 14. Then, temporary curing,
In the state of B stage, the resin surface is pressed flat by the resin leveling tool 26. After that, it is fully cured (Fig. 9
(See (f)).

After the main curing, as shown in FIGS. 1F and 1G, the sheet 14 from the film (tape base material) 19 is exposed to UV.
Peel it off by irradiating it, and then from the resin side, sheet 1
4 is peeled off by UV irradiation. When the sheet 14 is peeled off from the resin surface, the electrode pads 17 formed on the sheet 14 are removed.
The wiring circuit 18 is transferred to the resin surface. As described above, a semiconductor device having a compact configuration equivalent to that of the chip 11 can be manufactured by using the conventional TCP manufacturing process (FIG. 4). That is, the tape carrier 22 having a structure in which the sheet 14 in which wiring and electrode pads are laminated is mounted on a TAB tape is used, and the wiring is transferred from the sheet 14 to the sealing resin surface. It becomes a package form. In addition, conventional TCP (Ta
The pe Carrier Package manufacturing line is used, and the tape base material is not used as the substrate material of the package, so that a low-cost package can be supplied.

A second embodiment of the present invention will be described with reference to FIGS.
A description will be given based on 0. FIG. 7 is a sectional view of a semiconductor device according to an embodiment of the present invention, and FIGS. 8A to 8D are process sectional views showing a method for manufacturing a semiconductor device according to an embodiment of the present invention.
9E to 9G are process cross-sectional views after FIG.
(H) and (i) are process sectional views after FIG.

As shown in FIG. 7, in this semiconductor device, the wiring circuit on the film 19 and the electrode pad 17 are in a positional relationship of facing the surface of the chip 11, and the bump 12 is formed.
Are arranged around the chip 11. Film carrier 2
2 has the same configuration as that of the first embodiment and is formed in the same manner. Next, a method of manufacturing the semiconductor device having the above structure will be described. First, as shown in FIG. 8A, the inner leads 13 formed on the film carrier 22 and the gold bumps 12 formed on the chip 11 are aligned with each other. The gold bump 12 is located around the chip 11.
Further, at this time, the electrode pad 17 formed on the sheet 14 in a positional relationship facing the chip 11 has a configuration in which the electrode pad 17 and the sheet 14 are arranged in this order when viewed from the chip 11.

Then, as shown in FIGS. 8B to 8D, the inner leads 13 and the gold bumps 12 are thermocompression bonded under the temperature of the bonding tool 23 of 500.degree.
It is joined by the eutectic bond of tin. Inner lead 13
The forming is shaped at this time. The bonding method is batch gang bonding. Next, FIG.
As shown in (e) to (g), a thermosetting epoxy sealing resin 25 is applied to cover the chip 11 joined to the film carrier 22 via the inner leads 13. The application is performed by drawing with a dispense method using the resin application nozzle 24. The encapsulating resin 25 is temporarily hardened and is brought into the B stage state, and the resin surface is pressed flat by the resin leveling tool 26. After that, it is fully cured.

After the main curing, as shown in FIGS. 10 (h) and 10 (i), the sheet 14 from the film (tape base material) 19 to U
Peel off by V irradiation, then U sheet 14 from the resin surface
Irradiate V and remove. When the sheet 14 is removed from the resin surface, the electrode pads 17 formed on the sheet 14 are transferred to the resin portion. As described above, a semiconductor device having a compact structure equivalent to that of the chip 11 can be manufactured by using the conventional TCP manufacturing process (FIG. 7).

A third embodiment of the present invention will be described with reference to FIGS. 11 to 14. 11 is a sectional view of a semiconductor device according to an embodiment of the present invention, FIGS. 12A to 12D are process sectional views showing a method of manufacturing a semiconductor device according to an embodiment of the present invention, and FIGS. 14G is a process sectional view after FIG. 12, and FIGS. 14H and 14I are process sectional views after FIG.

As shown in FIG. 11, this semiconductor device is
The wiring circuit on the film 19 and the electrode pads 17 are in a positional relationship of facing the surface of the chip 11 via the sheet 14, and the bumps 12 are arranged around the chip 11. The film carrier 22 is formed in the same manner as in the first embodiment, but the sheet 14 is divided into four sides of the chip 11.

Next, a method of manufacturing the semiconductor device having the above structure will be described. First, as shown in FIG. 12A, the bond positions of the formed inner leads 13 on the film carrier 22 and the gold bumps 12 on the chip 11 are aligned. The gold bump 12 is located around the chip 11. Further, at this time, the sheet 14 in a positional relationship facing the chip 11 is divided into four sides of the semiconductor element. The electrode pad 17 formed on the sheet 14 has a configuration in which the sheet 14 and the electrode pad 17 are arranged in this order when viewed from the chip 11.

Then, as shown in FIGS. 12B to 12D, the inner leads 13 and the gold bumps 12 are thermocompression bonded under the temperature of the bonding tool 23 of about 500.degree.
They are joined by a gold-tin eutectic bond. The inner lead 13 is shaped at this time. The bonding method is batch gang bonding. next,
As shown in FIGS. 13E to 13G, the chip 11 joined to the film carrier 22 via the inner leads 13.
A thermosetting epoxy sealing resin 25 is applied to cover the top. The application is performed by drawing using a resin application nozzle 24 in a dispense method. The sealing resin 25 is temporarily cured, and
In the stage state, the resin leveling tool 26 presses the resin surface flat. After that, it is fully cured.

After the main curing, as shown in FIGS. 14 (h) and 14 (i), the sheet (U) is moved from the film (tape substrate) 19 to the sheet U.
Peel off by V irradiation, and further UV irradiate the sheet 14,
Remove from resin part. When the sheet 14 is removed from the resin portion, the electrode pad 17 formed on the sheet 14 is transferred to the resin portion. As described above, a semiconductor device having a compact configuration equivalent to that of the chip 11 can be manufactured by using the conventional TCP manufacturing process (FIG. 11).

A fourth embodiment of the present invention will be described with reference to FIGS. FIG. 15 is a sectional view of a semiconductor device according to an embodiment of the present invention, FIGS. 16A to 16D are process sectional views showing a method for manufacturing a semiconductor device according to an embodiment of the present invention, FIG. (F) is a process sectional view after FIG. 16, FIGS. 18 (g) and (h) are process sectional views after FIG. 17,
19I and 19J are process cross-sectional views after FIG.

As shown in FIG. 15, this semiconductor device is
Chips 11 having bumps 12 arranged in two rows on the surface and inner leads 13 connected to the bumps 12
The wiring circuit 18 is provided with a sealing resin 25 formed over substantially the entire surface of the chip 11 with the inner lead 13 embedded therein, and a wiring circuit 18 and an electrode pad 17 extending from the inner lead 13. It has a vertical structure in which an electrode pad 17 is formed on one side surface of the chip 11 so as to extend from the outer peripheral edge of the sealing resin 25 and be routed to the side surface and the back surface of the chip 11. The film carrier 22 is the first
The configuration is the same as that of the embodiment and is formed in the same manner.

Next, a method of manufacturing the semiconductor device having the above structure will be described. First, as shown in FIG. 16A, the inner leads 13 formed on the film carrier 22 and the gold bumps 12 formed on the chip 11 are bonded to each other. The gold bumps 12 are arranged in two rows facing each other on the chip 11. At this time, the electrode pad 17 and the wiring circuit 18 formed on the sheet 14 which is in the positional relationship of facing the chip 11 are arranged in the order of the electrode pad 17, the wiring circuit 18, and the sheet 14 when viewed from the chip 11. It has a structure of.

Then, as shown in FIGS. 16 (b) to 16 (d), the inner leads 13 and the gold bumps 12 are thermocompression bonded under the temperature of the bonding tool 23 of 490 ° C., and gold-tin eutectic bonding is performed. To be joined. Inner lead 1
Forming 3 is shaped at this time. The bonding method is batch gang bonding. Next, as shown in FIGS. 17E and 17F, the film carrier 2
A thermosetting epoxy encapsulating resin 25 is applied to cover the chip 11 joined to the second via the inner lead 13.
The application is performed by drawing using a resin application nozzle 24 in a dispense method. The encapsulating resin 25 is temporarily hardened and is brought into the B stage state, and the resin surface is pressed flat by the resin leveling tool 26.

After the temporary curing, as shown in FIG.
V irradiation, film (tape base material) 19 to sheet 14
Peel off. Then, as shown in FIG. 18H, the routed circuit portion provided with the solder resist 15 is bent and attached to the side surface and the back surface of the chip 11 via the adhesive 16. After that, by the main curing, the sealing resin 25 and the adhesive 16
Is cured.

Finally, as shown in FIGS. 19 (i) and 19 (j), when the sheet 14 is irradiated with UV and removed, the electrode pads 17 formed on the sheet 14 and the routing circuits are provided on the side surface and the back surface of the chip 11. Is transcribed to. As described above, a semiconductor device having a compact configuration equivalent to that of the chip 11 and further vertically mountable on the substrate can be manufactured by using the conventional TCP manufacturing process (FIG. 15).

In the first, second and fourth embodiments, the inner lead, the wiring circuit and the electrode pad may be formed on the film without using the sheet. Further, the inner lead may be configured so as to be connected to the bump on the semiconductor element by heating / pressurizing between different kinds of metals.

[0043]

The present invention has the following effects.

[0044]

According to the semiconductor device of the first aspect of the present invention, the semiconductor element in which bumps are arranged in two rows facing each other on the surface, the leads connected to the bump, and the surface of the semiconductor element with the leads embedded therein are provided. Of the encapsulating resin formed on substantially the entire area of, and a wiring circuit and an electrode pad extended from the lead, the wiring circuit is extended to the side surface and the back surface of the semiconductor element protruding from the outer peripheral edge of the sealing resin, Since the electrode pad is formed on one side surface of the semiconductor element, the semiconductor element can be mounted vertically on the substrate, and the mounting area can be further reduced.

According to the method of manufacturing a semiconductor device according to the second aspect of the present invention, the leads, the wiring circuits and the electrode pads are formed on the sheet having the same size as the semiconductor element and having the openings, and the sheet is formed. A film carrier is formed by mounting a sheet on a film that has an opening of the same shape as the opening so that the openings of the film and the openings of the film are aligned. Connect the leads to the bumps on the semiconductor element and cover the semiconductor element with a sealing resin. Since the wiring circuit and the electrode pads are transferred to the resin surface by removing the film and the sheet, the package form has a compact structure. In addition, conventional TCP (Tape)
Carrier Package) production line,
Since the tape base material is not used as the substrate material of the package, a low-cost package can be supplied. In addition, since the film as a carrier is not the base material of the package but the material of the mediating means for transferring the sheet to the resin surface, it can be used any number of times, the material used can be reduced, and energy and the environment can be considered. be able to.

In the third aspect , the bumps are arranged near the center of the semiconductor element, and the wiring circuit is routed to form the electrode pads having a wider space and larger area than the bump arrangement pitch around the semiconductor element. The electrode pads are securely connected and the insulation distance can be secured. According to claim 4, the wiring circuit and electrode pads becomes the position relationship opposite the semiconductor element surface, since placing the bumps around the semiconductor element, the spacing of the electrode pad can be extended in accordance with the arrangement pitch of the bumps, also The wiring circuit can be shortened.

In the fifth aspect , the wiring circuit and the electrode pad are in a positional relationship of facing the semiconductor element surface through the sheet, and the sheet is divided into four sides of the semiconductor element and mounted on the film. An injection space for the sealing resin having a thickness equal to or larger than the thickness of the sheet is formed between and, and the wiring circuit and the electrode pad can be reliably fixed. Further, when the wiring circuit and the electrode pad are transferred to the resin surface by peeling the film and the sheet from the resin surface of the sealing resin, the sheet is divided into four sides of the semiconductor element, so that the sheet is peeled off. It will be easier.

In the sixth aspect , the bumps are arranged in two rows facing each other on the semiconductor element, the wiring circuit is routed to the side surface and the back surface of the semiconductor element, and the electrode pad is transferred to one side surface of the semiconductor element, so that the vertical mounting can be achieved. It is possible and the mounting area on the substrate can be made smaller. Claim 7 of this invention
According to the film carrier described, the sheet having the same size as the element and having the opening, the lead, the wiring circuit and the electrode pad formed, and the opening having substantially the same shape as the opening of the sheet are matched with each other. As described above, the sheet carrier is used to form a film, so that a semiconductor device having a compact structure can be manufactured by using this film carrier. At this time, the leads are connected to the bumps on the semiconductor element, the semiconductor element is covered with a sealing resin, and the film and sheet are removed to transfer the wiring circuit and the electrode pad onto the resin surface. As described above, the film is not the base material of the package but the material of the mediating means for transferring the sheet to the resin surface, and thus it is reusable and contributes to resource saving.

[Brief description of drawings]

FIG. 1 is a plan view of a semiconductor device according to a first embodiment of the present invention at a manufacturing stage.

2A to 2D are process cross-sectional views showing a method for manufacturing a semiconductor device according to a first embodiment of the present invention.

3E to 3G are process cross-sectional views after FIG.

FIG. 4A is a plan view of the semiconductor device according to the first embodiment of the present invention, and FIG. 4B is a sectional view thereof.

5 (a) and 5 (b) are plan views of a manufacturing process of the film carrier according to the first embodiment of the present invention.

FIG. 6A is a view seen from the surface of the film carrier,
(B) is the figure seen from the back surface.

FIG. 7 is a cross-sectional view of the semiconductor device according to the first embodiment of the present invention.

8A to 8D are process cross-sectional views showing a method for manufacturing a semiconductor device according to an embodiment of the present invention.

9E to 9G are process cross-sectional views after FIG.

10 (h) and 10 (i) are process cross-sectional views after FIG.

FIG. 11 is a sectional view of a semiconductor device according to a third embodiment of the present invention.

12A to 12D are process cross-sectional views showing a method for manufacturing a semiconductor device according to a third embodiment of the present invention.

13 (e) to (g) are process cross-sectional views after FIG.

14 (h) and (i) are process cross-sectional views after FIG.

FIG. 15 is a sectional view of a semiconductor device according to a fourth embodiment of the present invention.

16A to 16D are process cross-sectional views showing the method for manufacturing a semiconductor device according to the fourth embodiment of the present invention.

17 (e) and (f) are process cross-sectional views after FIG.

18 (g) and 18 (h) are process cross-sectional views after FIG.

19 (i) and (j) are process cross-sectional views after FIG.

FIG. 20 is a sectional view showing a conventional package structure.

FIG. 21 is a cross-sectional view showing another example of the conventional package structure.

[Explanation of symbols]

11 chips 12 bumps 13 Inner lead 14 sheets 15 Solder resist 16 Adhesive 17 electrode pad 18 Copper foil wiring circuit 19 Film (tape base material) 21 Device hole 22 film carrier 23 Bonding tool 24 Resin coating nozzle 25 sealing resin 26 Resin Leveling Tool

─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-8-116015 (JP, A) JP-A-10-70217 (JP, A) JP-A-5-129473 (JP, A) JP-A-9- 172033 (JP, A) JP-A-10-189638 (JP, A) (58) Fields investigated (Int.Cl. ⁷ , DB name) H01L 21/60 H01L 23/12

Claims (7)

(57) [Claims] 1. Semiconductor elements in which bumps are arranged in two rows on the surface and leads connected to the bumps;
The semiconductor device includes a sealing resin formed over substantially the entire surface of the semiconductor element in a state where the leads are embedded, and a wiring circuit and an electrode pad extending from the lead, wherein the wiring circuit is outside the sealing resin. A semiconductor device, wherein the semiconductor device has an electrode pad formed on one side surface of the semiconductor element so as to extend from a peripheral edge and be routed to a side surface and a back surface of the semiconductor element. 2. A lead, a wiring circuit, and an electrode pad are formed on a sheet having a size similar to that of a semiconductor element and having an opening, and mutual openings are formed in a film having an opening having substantially the same shape as the opening of the sheet. The step of forming a film carrier by mounting the sheet so as to match, the step of connecting the leads and the bumps on the semiconductor element, the step of covering the semiconductor element with a sealing resin, the film and the And a step of transferring the wiring circuit and the electrode pad to the resin surface by removing the sheet. 3. A bump is arranged near the center of the semiconductor element,
3. The method of manufacturing a semiconductor device according to claim 2 , wherein the wiring circuit is routed to form the electrode pads having a wider space and a wider area than the arrangement pitch of the bumps around the semiconductor element. 4. The method of manufacturing a semiconductor device according to claim 2 , wherein the wiring circuit and the electrode pad have a positional relationship facing the surface of the semiconductor element, and the bump is arranged around the semiconductor element. 5. The method for manufacturing a semiconductor device according to claim 2 , wherein the wiring circuit and the electrode pad are in a positional relationship of facing the surface of the semiconductor element via a sheet, and the sheet is divided into four sides of the semiconductor element and mounted on the film. . 6. Place the bumps in two rows facing onto the semiconductor element, lead wires circuit side and the back surface of the semiconductor element, the semiconductor device according to claim 2, wherein for transferring the electrode pad on one side surface of the semiconductor element Manufacturing method. 7. A sheet having a size similar to that of a semiconductor element and having an opening, on which leads, wiring circuits and electrode pads are formed, and an opening having substantially the same shape as the opening of the sheet, and the mutual openings coincide with each other. A film carrier comprising a film on which the sheet is mounted.