JPH11112109A - 窒化物半導体発光素子 - Google Patents

窒化物半導体発光素子

Info

Publication number
JPH11112109A
JPH11112109A JP22760998A JP22760998A JPH11112109A JP H11112109 A JPH11112109 A JP H11112109A JP 22760998 A JP22760998 A JP 22760998A JP 22760998 A JP22760998 A JP 22760998A JP H11112109 A JPH11112109 A JP H11112109A
Authority
JP
Japan
Prior art keywords
nitride semiconductor
layer
light emitting
emitting device
undoped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22760998A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11112109A5 (enExample
Inventor
Takashi Mukai
孝志 向井
Hiroki Narimatsu
宏記 成松
Shuji Nakamura
修二 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Chemical Industries Ltd
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Priority to JP22760998A priority Critical patent/JPH11112109A/ja
Publication of JPH11112109A publication Critical patent/JPH11112109A/ja
Publication of JPH11112109A5 publication Critical patent/JPH11112109A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP22760998A 1997-07-25 1998-07-27 窒化物半導体発光素子 Pending JPH11112109A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22760998A JPH11112109A (ja) 1997-07-25 1998-07-27 窒化物半導体発光素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-199471 1997-07-25
JP19947197 1997-07-25
JP22760998A JPH11112109A (ja) 1997-07-25 1998-07-27 窒化物半導体発光素子

Publications (2)

Publication Number Publication Date
JPH11112109A true JPH11112109A (ja) 1999-04-23
JPH11112109A5 JPH11112109A5 (enExample) 2005-10-27

Family

ID=26511555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22760998A Pending JPH11112109A (ja) 1997-07-25 1998-07-27 窒化物半導体発光素子

Country Status (1)

Country Link
JP (1) JPH11112109A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6468818B2 (en) * 1999-01-25 2002-10-22 Sharp Kabushiki Kaisha Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage
KR20030083820A (ko) * 2002-04-22 2003-11-01 엘지전자 주식회사 질화물 반도체 발광 소자의 제조 방법
KR100489039B1 (ko) * 2002-08-19 2005-05-11 엘지이노텍 주식회사 질화 갈륨계 반도체 발광 다이오드 제조방법
JPWO2008041648A1 (ja) * 2006-09-29 2010-02-04 パナソニック株式会社 レーザ発光装置とそれを用いた画像表示装置
US9620671B2 (en) 2012-06-13 2017-04-11 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and method for manufacturing same
CN110364603A (zh) * 2019-07-18 2019-10-22 佛山市国星半导体技术有限公司 一种抗静电的外延结构及其制作方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07302929A (ja) * 1994-03-08 1995-11-14 Sumitomo Chem Co Ltd ３−５族化合物半導体と発光素子
JPH08148718A (ja) * 1994-09-19 1996-06-07 Toshiba Corp 化合物半導体装置
JPH0936426A (ja) * 1995-07-17 1997-02-07 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
JPH09321338A (ja) * 1996-03-22 1997-12-12 Sumitomo Chem Co Ltd 発光素子
JPH1084132A (ja) * 1996-09-08 1998-03-31 Toyoda Gosei Co Ltd 半導体発光素子
JPH10135575A (ja) * 1996-09-06 1998-05-22 Toshiba Corp 窒化物系半導体素子及びその製造方法
JPH10163523A (ja) * 1996-12-03 1998-06-19 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法および発光素子

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07302929A (ja) * 1994-03-08 1995-11-14 Sumitomo Chem Co Ltd ３−５族化合物半導体と発光素子
JPH08148718A (ja) * 1994-09-19 1996-06-07 Toshiba Corp 化合物半導体装置
JPH0936426A (ja) * 1995-07-17 1997-02-07 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
JPH09321338A (ja) * 1996-03-22 1997-12-12 Sumitomo Chem Co Ltd 発光素子
JPH10135575A (ja) * 1996-09-06 1998-05-22 Toshiba Corp 窒化物系半導体素子及びその製造方法
JPH1084132A (ja) * 1996-09-08 1998-03-31 Toyoda Gosei Co Ltd 半導体発光素子
JPH10163523A (ja) * 1996-12-03 1998-06-19 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法および発光素子

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6468818B2 (en) * 1999-01-25 2002-10-22 Sharp Kabushiki Kaisha Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage
KR20030083820A (ko) * 2002-04-22 2003-11-01 엘지전자 주식회사 질화물 반도체 발광 소자의 제조 방법
KR100489039B1 (ko) * 2002-08-19 2005-05-11 엘지이노텍 주식회사 질화 갈륨계 반도체 발광 다이오드 제조방법
JPWO2008041648A1 (ja) * 2006-09-29 2010-02-04 パナソニック株式会社 レーザ発光装置とそれを用いた画像表示装置
US9620671B2 (en) 2012-06-13 2017-04-11 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and method for manufacturing same
CN110364603A (zh) * 2019-07-18 2019-10-22 佛山市国星半导体技术有限公司 一种抗静电的外延结构及其制作方法

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