JPH11112109A5 - - Google Patents

Info

Publication number
JPH11112109A5
JPH11112109A5 JP1998227609A JP22760998A JPH11112109A5 JP H11112109 A5 JPH11112109 A5 JP H11112109A5 JP 1998227609 A JP1998227609 A JP 1998227609A JP 22760998 A JP22760998 A JP 22760998A JP H11112109 A5 JPH11112109 A5 JP H11112109A5
Authority
JP
Japan
Prior art keywords
nitride semiconductor
layer
undoped
emitting device
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998227609A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11112109A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP22760998A priority Critical patent/JPH11112109A/ja
Priority claimed from JP22760998A external-priority patent/JPH11112109A/ja
Publication of JPH11112109A publication Critical patent/JPH11112109A/ja
Publication of JPH11112109A5 publication Critical patent/JPH11112109A5/ja
Pending legal-status Critical Current

Links

JP22760998A 1997-07-25 1998-07-27 窒化物半導体発光素子 Pending JPH11112109A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22760998A JPH11112109A (ja) 1997-07-25 1998-07-27 窒化物半導体発光素子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-199471 1997-07-25
JP19947197 1997-07-25
JP22760998A JPH11112109A (ja) 1997-07-25 1998-07-27 窒化物半導体発光素子

Publications (2)

Publication Number Publication Date
JPH11112109A JPH11112109A (ja) 1999-04-23
JPH11112109A5 true JPH11112109A5 (enExample) 2005-10-27

Family

ID=26511555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22760998A Pending JPH11112109A (ja) 1997-07-25 1998-07-27 窒化物半導体発光素子

Country Status (1)

Country Link
JP (1) JPH11112109A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3472714B2 (ja) * 1999-01-25 2003-12-02 シャープ株式会社 半導体発光素子の製造方法
KR20030083820A (ko) * 2002-04-22 2003-11-01 엘지전자 주식회사 질화물 반도체 발광 소자의 제조 방법
KR100489039B1 (ko) * 2002-08-19 2005-05-11 엘지이노텍 주식회사 질화 갈륨계 반도체 발광 다이오드 제조방법
US8189632B2 (en) * 2006-09-29 2012-05-29 Panasonic Corporation Laser emission device and image display device using the same
CN104364917B (zh) 2012-06-13 2017-03-15 夏普株式会社 氮化物半导体发光元件及其制造方法
CN110364603B (zh) * 2019-07-18 2024-09-27 佛山市国星半导体技术有限公司 一种抗静电的外延结构及其制作方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3509260B2 (ja) * 1994-03-08 2004-03-22 住友化学工業株式会社 ３−５族化合物半導体と発光素子
JP3761935B2 (ja) * 1994-09-19 2006-03-29 株式会社東芝 化合物半導体装置
JP3598591B2 (ja) * 1995-07-17 2004-12-08 住友化学工業株式会社 ３−５族化合物半導体の製造方法
JP3752739B2 (ja) * 1996-03-22 2006-03-08 住友化学株式会社 発光素子
JP3688843B2 (ja) * 1996-09-06 2005-08-31 株式会社東芝 窒化物系半導体素子の製造方法
JP3304782B2 (ja) * 1996-09-08 2002-07-22 豊田合成株式会社 半導体発光素子
JPH10163523A (ja) * 1996-12-03 1998-06-19 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法および発光素子

Similar Documents

Publication Publication Date Title
EP1551063A4 (en) COMPOSITE GALLIUM NITRIDE SEMICONDUCTOR EQUIPMENT AND MANUFACTURING METHOD
EP1536486A4 (en) COMPOSITE SEMICONDUCTOR ELEMENT ON GALLIUM NITRID BASE
AU2002257318A1 (en) Group iii nitride based light emitting diode structures with a quantum well and superlattice
EP2034530A3 (en) Gan based led formed on a sic substrate
WO2003038874A8 (en) Diode having vertical structure and method of manufacturing the same
DE602005020586D1 (de) Iii-nitridverbindungs-halbleiter-lichtemissionsbauelement
EP0496030A3 (en) Semiconductor light emitting device
JP2002203987A5 (enExample)
WO2004008552A3 (en) Group iii nitride led with undoped cladding layer and multiple quantum well
JP2002033512A (ja) 窒化物半導体発光ダイオード
JP2003101154A5 (enExample)
EP1220335A3 (en) Surface-light-emitting device including AlGaInP and AlGaAs multi-film reflecting layers
SG127832A1 (en) Light-emitting device, method for making the same,and nitride semiconductor substrate
JPH11112109A5 (enExample)
JP4824129B2 (ja) 発光素子
EP1734590A3 (en) Light-Emitting device
KR20110044020A (ko) 발광소자 및 그 제조방법
JP2001168384A5 (enExample)
JP2003060234A5 (enExample)
GB2420013B (en) Light emitting diode and fabrication method thereof
JP2898847B2 (ja) 半導体発光装置
JP2003243772A5 (enExample)
TW200731583A (en) Method of manufacturing gallium nitride based light emitting diode
JP2007095786A5 (enExample)
JP2007234918A5 (enExample)