JPH11111707A - 気相成長装置 - Google Patents

気相成長装置

Info

Publication number
JPH11111707A
JPH11111707A JP29039597A JP29039597A JPH11111707A JP H11111707 A JPH11111707 A JP H11111707A JP 29039597 A JP29039597 A JP 29039597A JP 29039597 A JP29039597 A JP 29039597A JP H11111707 A JPH11111707 A JP H11111707A
Authority
JP
Japan
Prior art keywords
susceptor
phase growth
vapor phase
growth apparatus
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29039597A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11111707A5 (enExample
Inventor
Eiji Sato
栄治 佐藤
Nobuhiro Nirasawa
信広 韮沢
Nobuhisa Komatsu
伸壽 小松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi Electronics Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Electronics Engineering Co Ltd filed Critical Hitachi Electronics Engineering Co Ltd
Priority to JP29039597A priority Critical patent/JPH11111707A/ja
Publication of JPH11111707A publication Critical patent/JPH11111707A/ja
Publication of JPH11111707A5 publication Critical patent/JPH11111707A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP29039597A 1997-10-07 1997-10-07 気相成長装置 Pending JPH11111707A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29039597A JPH11111707A (ja) 1997-10-07 1997-10-07 気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29039597A JPH11111707A (ja) 1997-10-07 1997-10-07 気相成長装置

Publications (2)

Publication Number Publication Date
JPH11111707A true JPH11111707A (ja) 1999-04-23
JPH11111707A5 JPH11111707A5 (enExample) 2004-09-16

Family

ID=17755464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29039597A Pending JPH11111707A (ja) 1997-10-07 1997-10-07 気相成長装置

Country Status (1)

Country Link
JP (1) JPH11111707A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006012048A3 (en) * 2004-06-29 2006-09-28 Intel Corp Deposition apparatus for providing uniform low-k dielectric
WO2007018157A1 (ja) * 2005-08-05 2007-02-15 Tokyo Electron Limited 基板処理装置およびそれに用いる基板載置台
WO2010140766A3 (ko) * 2009-06-01 2011-03-10 주식회사 유진테크 기판지지유닛 및 이를 포함하는 기판처리장치
DE102015113956A1 (de) * 2015-08-24 2017-03-02 Meyer Burger (Germany) Ag Substratträger
CN106948002A (zh) * 2017-03-15 2017-07-14 南京国盛电子有限公司 电磁感应加热外延炉的双面基座结构
KR20180046867A (ko) * 2016-10-28 2018-05-09 램 리써치 코포레이션 개방 볼륨 이퀄라이제이션 통로들 및 측면 밀폐부를 가진 평면형 기판 에지 콘택트
JP2021190688A (ja) * 2020-05-28 2021-12-13 環球晶圓股▲ふん▼有限公司Global Wafers Co., Ltd. ウェハマウントステーションおよびウェハ埋め込み構造の形成方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006012048A3 (en) * 2004-06-29 2006-09-28 Intel Corp Deposition apparatus for providing uniform low-k dielectric
WO2007018157A1 (ja) * 2005-08-05 2007-02-15 Tokyo Electron Limited 基板処理装置およびそれに用いる基板載置台
WO2010140766A3 (ko) * 2009-06-01 2011-03-10 주식회사 유진테크 기판지지유닛 및 이를 포함하는 기판처리장치
JP2012529173A (ja) * 2009-06-01 2012-11-15 ユ−ジーン テクノロジー カンパニー．リミテッド 基板支持ユニット及びそれを含む基板処理装置
US10964568B2 (en) 2015-08-24 2021-03-30 Meyer Burger (Germany) Gmbh Substrate carrier
DE102015113956A1 (de) * 2015-08-24 2017-03-02 Meyer Burger (Germany) Ag Substratträger
DE102015113956B4 (de) 2015-08-24 2024-03-07 Meyer Burger (Germany) Gmbh Substratträger
KR20180046867A (ko) * 2016-10-28 2018-05-09 램 리써치 코포레이션 개방 볼륨 이퀄라이제이션 통로들 및 측면 밀폐부를 가진 평면형 기판 에지 콘택트
JP2018078284A (ja) * 2016-10-28 2018-05-17 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 開放空間均圧化通路および側方閉じ込めを備えた平坦な基板縁部接触部
JP2022120080A (ja) * 2016-10-28 2022-08-17 ラム リサーチ コーポレーション 開放空間均圧化通路および側方閉じ込めを備えた平坦な基板縁部接触部
US11443975B2 (en) 2016-10-28 2022-09-13 Lam Research Corporation Planar substrate edge contact with open volume equalization pathways and side containment
KR20230163977A (ko) * 2016-10-28 2023-12-01 램 리써치 코포레이션 개방 볼륨 이퀄라이제이션 통로들 및 측면 밀폐부를 가진 평면형 기판 에지 콘택트
CN106948002A (zh) * 2017-03-15 2017-07-14 南京国盛电子有限公司 电磁感应加热外延炉的双面基座结构
CN106948002B (zh) * 2017-03-15 2019-07-09 南京国盛电子有限公司 电磁感应加热外延炉的双面基座结构
JP2021190688A (ja) * 2020-05-28 2021-12-13 環球晶圓股▲ふん▼有限公司Global Wafers Co., Ltd. ウェハマウントステーションおよびウェハ埋め込み構造の形成方法

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