JPH11102069A - Positive photosensitive resin composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form a pattern having high sensitivity and a high rate of a residual film thickness by using a specified polyamide, a photosensitive diazoquinone compd., a phenolic compd., an organosilicon compd. and a solvent. SOLUTION: The photosensitive resin compsn. consists of 100 pts.wt. polyamide represented by formula I, 1-100 pts.wt. photosensitive diazoquinone compd., 1-50 pts.wt. phenolic compd. represented by formula II and/or formula III, 1-20 pts.wt. organosilicon compd. represented by formula IV and/or formula V and a solvent. In the formulae, X is a tetravalent arom. residue, Y is a divalent arom. residue, each of R1 and R2 is a divalent org. group, each of R3 and R4 is a monovalent org. group, each of R5 , R6 and R11 is H or alkyl, each of R7 -R10 is H, hydroxyl or alkyl, each of R12 -R17 is H, halogen, hydroxyl or alkyl, R18 is a monovalent org. group and R19 is a monovalent org. group.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a positive photosensitive resin composition capable of obtaining a pattern having a high sensitivity and a high residual film ratio and having excellent adhesion to a sealing resin and a substrate.

[0002]

2. Description of the Related Art Conventionally, a polyimide resin having excellent heat resistance and excellent electrical and mechanical properties has been used for a surface protective film and an interlayer insulating film of a semiconductor element. There is a demand for remarkable improvement in heat cycle resistance and heat shock resistance due to integration, enlargement, thinning and miniaturization of the sealing resin package, transition to surface mounting by solder reflow, etc. It is becoming needed. On the other hand, a technique of imparting photosensitivity to the polyimide resin itself has recently attracted attention. For example, the following formula (13) is given as a photosensitive polyimide resin.

[0003]

Embedded image

When this is used, a part of the pattern forming process can be simplified, which has the effect of shortening the process.
Since a solvent such as methyl-2-pyrrolidone is required, there is a problem in safety and handling. Therefore, recently, a positive photosensitive resin that can be developed with an alkaline aqueous solution has been developed. For example, Japanese Patent Publication No. 1-46862 discloses a positive photosensitive resin composed of a polybenzoxazole resin and a diazoquinone compound or a polybenzoxazole precursor and a diazoquinone compound.
It has high heat resistance, excellent electrical properties and fine workability, and has the potential not only as a wafer coat but also as an interlayer insulating resin.

[0005] The developing mechanism of this positive photosensitive resin is such that the unexposed portion of the diazoquinone compound is insoluble in an alkaline aqueous solution, and upon exposure, the diazoquinone compound undergoes a chemical change and becomes soluble in the alkaline aqueous solution.
By utilizing the difference in solubility between the exposed part and the unexposed part, a coating film pattern can be formed only in the unexposed part. When these photosensitive resins are actually used, a particular problem is the sensitivity of the photosensitive resin. If the sensitivity is low, the exposure time per wafer becomes long, and the throughput decreases.
In order to improve the sensitivity of the photosensitive resin, for example, if the molecular weight of the polybenzoxazole resin of the base resin is reduced, the film loss at the time of development of the non-exposed portion increases,
There arises a problem that the pattern shape is deteriorated. In addition, the adhesion between the photosensitive resin and the sealing resin is poor, peeling occurs at the interface, there is a problem in practicality, and a photosensitive resin with more excellent adhesion to the sealing resin is strongly demanded. Has become.

Further, in this positive type photosensitive resin, the via hole portion is removed using an alkaline aqueous solution.
Unlike other conventional photosensitive polyimide resins, no organic solvent is required, and work safety is further improved. However, this photosensitive polybenzoxazole precursor has poor adhesion to a substrate, particularly a silicon wafer, and also has a serious defect that the resin is separated from the substrate by a high-temperature moisture absorption treatment after curing.

[0007] In order to improve the adhesion, an adhesion component has been added to varnish. Examples of adding an organosilicon compound to a positive photosensitive resin are disclosed in, for example, Japanese Patent Application No. Hei.
No. 145527. When such an organosilicon compound is added to a resin composition using γ-butyrolactone as a solvent, the organosilicon compound has a disadvantage that a condensation reaction occurs and precipitates.

In recent years, as semiconductor circuits have been miniaturized, chemically amplified resists have been used as resists. This chemically amplified resist is a mechanism in which an acid is generated by irradiating light, and the generated acid decomposes the polymer to make it soluble in alkali and can be alkali-developed, but its characteristics are affected by the chemical substances contained in the atmosphere. Be greatly affected. For example, a trace amount of a basic substance present in a semiconductor clean room reacts with an acid generated in a resist, and the developability is greatly changed. Conventional resin for semiconductor coating uses N-methyl-2-pyrrolidone (N
Since the basic solvent (MP) was used, NMP diffused into the clean room by pre-baking, and had a great influence on the resist characteristics.

[0009]

DISCLOSURE OF THE INVENTION The present invention relates to a positive photosensitive resin and a sealing resin, which can obtain a pattern having a high sensitivity and a high residual film ratio and have excellent adhesion to a sealing resin and a substrate. An object of the present invention is to provide a positive-type photosensitive resin having excellent adhesion.

[0010]

According to the present invention, there is provided a compound represented by the general formula (1):
(A), 100 parts by weight of a photosensitive diazoquinone compound (B), and 100 parts by weight of a general formula (2)
And / or the phenolic compound (C) represented by (3)
A positive photosensitive resin composition comprising 1 to 50 parts by weight, 1 to 20 parts by weight of an organosilicon compound (D) represented by the general formula (4) and / or (5), and a solvent. .

[0011]

Embedded image

[0012]

Embedded image

[0013]

Embedded image

[0014]

Embedded image

[0015]

Embedded image

The polyamide of the formula (1) comprises bisaminophenol having the structure of X, dicarboxylic acid having the structure of Y, and diamine having the structure of Z. When the polyamide is heated at about 300 to 400 ° C., the ring is closed. To a heat-resistant resin called polybenzoxazole. X of the polyamide (1) of the present invention is, for example,

[0017]

Embedded image

However, the present invention is not limited to these. Among them, the one having particularly high sensitivity is selected from the general formula (10).

[0019]

Embedded image

Further, Y in the formula (1) is, for example,

[0021]

Embedded image

However, the present invention is not limited to these. Among these, those having a particularly high sensitivity are those selected from the general formula (11).

[0023]

Embedded image

Further, Z in the formula (1) is, for example,

[0025]

Embedded image

However, the present invention is not limited to these. Z in the formula (1) is used, for example, when adhesion is particularly required to a substrate such as a silicon wafer.
About the use ratio b, it can be used up to 40.0 mol%. If it exceeds 40.0 mol%, the solubility of the resin is extremely reduced, scum is generated, and pattern processing cannot be performed. When using X, Y, and Z, one type or a mixture of two or more types may be used. In the polyamide of the formula (1), the polyamide of the formula (17) where b = 0 is preferably used.

[0027]

Embedded image

The photosensitive diazoquinone compound used in the present invention is a compound having a 1,2-benzoquinonediazide or 1,2-naphthoquinonediazide structure, and is disclosed in US Pat. Nos. 2,772,972 and 2,797, 21
No. 3,669,658. For example, the following are mentioned.

[0029]

Embedded image

[0030]

Embedded image

Among them, the following are particularly preferable from the viewpoint of a high residual film ratio.

[0032]

Embedded image

The compounding amount of the photosensitive diazidoquinone compound (B) to the polyamide (A) is 1 to 100 parts by weight with respect to 100 parts by weight of the polyamide. If the compounding amount is less than 1 part by weight, the patterning property of the resin is poor. Conversely, if it exceeds 100 parts by weight, the tensile elongation of the film is significantly reduced.
A semiconductor device in which a film having a low tensile elongation is applied to the element surface is not preferable because reliability such as thermal stress deteriorates.

A dihydropyridine derivative can be added to the positive photosensitive resin composition of the present invention, if necessary, to enhance the photosensitive characteristics. Examples of dihydroxypyridine derivatives include, for example, 2,6-dimethyl-3,5-diacetyl-4- (2'-nitrophenyl) -1,4-dihydropyridine, 4- (2'-nitrophenyl) -2,6-dimethyl -3,5-dicarbethoxy-1,4-dihydropyridine, 4- (2 ', 4'-dinitrophenyl)-
2,6-dimethyl-3,5-carbomethoxy-1,4-
Dihydropyridine and the like can be mentioned.

The positive photosensitive resin composition of the present invention may further contain a phenol compound represented by the general formula (2) and / or (3) in addition to the above components (A) and (B). is important.

As a technique for adding a phenol compound to a positive resist composition, for example, JP-A-3-2002
No. 51, JP-A-3-200252, JP-A-3-20052
JP-A-200253, JP-A-3-200254, JP-A-4-1650, JP-A-4-1651, JP-A-4-11260, JP-A-4-123
No. 56, JP-A-4-12357. However, phenol compounds such as those described above have a small effect of improving sensitivity even when used in a positive photosensitive resin containing a polyamide as a base resin in the present invention.
However, when the phenol compound represented by the general formula (2) or (3) in the present invention is used, the dissolution rate in the exposed part increases, and the sensitivity improves. In addition, the film loss in the unexposed portion, which is observed when the sensitivity is increased by reducing the molecular weight, is very small and good. Further, in the present invention, as a new property by adding the phenol compound represented by the general formula (2), a positive photosensitive resin composition having improved adhesion to a sealing resin can be obtained. It has been found that the reliability of the semiconductor device applied to the surface is improved.
Examples of the compound represented by the general formula (2) include the following, but are not limited thereto.

[0037]

Embedded image

[0038]

Embedded image

[0039]

Embedded image

[0040]

Embedded image

Among them, those which are particularly preferable in terms of sensitivity and residual film ratio are the chemical formulas (8) and (9), and the compounds represented by the chemical formulas (8) and (9) are used alone or in a mixture. 5 in all phenolic compounds (C) in the form of
0% by weight or more is contained. Since the phenol represented by the general formula (2) has low solubility at low temperatures, for example, when the composition containing the phenol of the general formula (2) is stored at a very low temperature, the phenol represented by the general formula (2) is rarely obtained. In some cases, precipitation of a phenol compound may be observed. In such a case, when a part of the general formula (2) is replaced with a phenol compound represented by the general formula (3), the storage stability at a low temperature is improved. Examples of the compound represented by the general formula (3) include the following, but are not limited thereto.

[0042]

Embedded image

[0043]

Embedded image

[0044]

Embedded image

The addition amount of the phenol compound (C) is preferably 1 to 50 parts by weight based on 100 parts by weight of the polyamide (A). If the added amount is less than 1 part by weight, the effect of improving sensitivity cannot be obtained, and if the added amount exceeds 50 parts by weight, the decrease in the residual film ratio becomes large, or precipitation occurs during frozen storage, resulting in lack of practicality. . The organosilicon compounds of the present invention represented by the general formulas (4) and (5) are used to improve the adhesion between the photosensitive resin and the sealing resin. One type or a mixture of two or more types may be used, but the addition amount is preferably 1 to 20 parts by weight based on 100 parts by weight of the polyamide. If the amount is less than 1 part by weight, the effect of improving the adhesiveness cannot be obtained.
It is not preferable because the mechanical strength of the polybenzoxazole film formed on the semiconductor element is reduced and the effect of relaxing the stress is reduced.

If necessary, additives such as a leveling agent can be added to the positive photosensitive resin composition of the present invention. In the present invention, these components are dissolved in a solvent and used in the form of a varnish. As the solvent, γ-butyrolactone, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl lactate, ethyl lactate, butyl lactate, methyl- 1,3-butylene glycol acetate, 1,3-butylene glycol-3-monomethyl ether, methyl pyruvate, ethyl pyruvate,
Methyl-3-methoxypropionate, cyclopentanone, cyclohexanone and the like may be used alone or as a mixture. Since these solvents have no nitrogen atom in the molecule and do not act as a basic, they do not affect the chemically amplified resist.

In the method of using the positive photosensitive resin composition of the present invention, the composition is first applied to a suitable support, for example, a silicon wafer, ceramic, aluminum substrate or the like. Examples of the coating method include spin coating using a spinner, spray coating using a spray coater, dipping, printing, and roll coating. Next, after pre-baking at 60 to 120 ° C. to dry the coating film, a desired pattern shape is irradiated with actinic radiation. As the actinic radiation, X-rays, electron beams, ultraviolet rays, visible rays and the like can be used, but those having a wavelength of 200 to 500 nm are preferable. Next, a relief pattern is obtained by dissolving and removing the irradiated portion with a developer. Examples of the developer include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia, primary amines such as ethylamine and n-propylamine, diethylamine, and di-n. -Secondary amines such as propylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, and quaternary ammoniums such as tetramethylammonium hydroxide and tetraethylammonium hydroxide. An aqueous solution of an alkali such as a salt or an aqueous solution obtained by adding a suitable amount of a water-soluble organic solvent such as an alcohol such as methanol or ethanol or a surfactant thereto can be suitably used. As a developing method, a system such as spray, paddle, immersion, and ultrasonic wave can be used. Next, the relief pattern formed by development is rinsed. Distilled water is used as the rinsing liquid. Next, heat treatment is performed to form an oxazole ring, and a final pattern having high heat resistance is obtained.

The positive photosensitive resin composition according to the present invention comprises
It is useful not only for semiconductors but also for interlayer insulation of multilayer circuits, cover coats of flexible copper clad boards, solder resist films, liquid crystal alignment films, and the like.

[0049]

The present invention will be described below in detail with reference to examples. << Example 1 >> * Synthesis of polyamide 2,2-bis (3-amino-4-hydroxyphenyl)
36.6 parts by weight (0.100 mol) of hexafluoropropane were mixed with 150 parts by weight of γ-butyrolactone and pyridine 3
Dissolved in 3.2 (0.420 mol) parts by weight. Next, 17.0 parts by weight (0.084 mol) of terephthalic acid chloride and 4.3 parts by weight (0.021 mol) of isophthalic acid chloride dissolved in 100 parts by weight of cyclohexanone were added.
The mixture was added dropwise at 15 ° C. over 30 minutes, and then stirred at room temperature for 4 hours to complete the reaction. After filtering the reaction mixture, the solution is poured into water, and the target is represented by the general formula (1).
-1, Y is a mixture of the following formulas Y-1 and Y-2, and a = 10
A polyamide (A1) consisting of 0 and b = 0 was precipitated.
The precipitate is collected by filtration, washed thoroughly with water, and then dried under vacuum at 80 ° C. for 1 hour.
It was dried day and night.

* Preparation of positive photosensitive resin composition 100 parts by weight of synthesized polyamide (A1), 25 parts by weight of diazoquinone (Q1) having the structure of the following formula, and phenol compound (P-1) having the structure of the following formula 15 parts by weight,
After dissolving 10 parts by weight of an organosilicon compound (S-1) having the following structure in 200 parts by weight of γ-butyrolactone,
The mixture was filtered through a 0.2 μm Teflon filter to obtain a photosensitive resin composition.

* Characteristics Evaluation The positive photosensitive resin composition was applied on a silicon wafer by using a spin coater, and then dried in an oven at 70 ° C. for 1 hour to obtain a coating having a thickness of about 3 μm. A g-line stepper exposure machine NSR-1505G3A (Nikon
50mJ through a reticle
/ Cm ^2, increasing by 10 mJ / cm ^{2 in} increments of 540 mJ /
Exposure was performed up to cm ² .

Next, the exposed portion was dissolved and removed by immersion in a 0.79% aqueous solution of tetramethylammonium hydroxide for 30 seconds, followed by rinsing with pure water for 30 seconds. As a result, it was confirmed that a pattern was formed from the irradiated portion with the exposure amount of 200 mJ / cm ² (that is, the sensitivity was 200 mJ / cm ² ). At this time, the residual film ratio (film thickness after development / film thickness before development) was as high as 91.3%. Also, separately apply a positive photosensitive resin composition on a silicon wafer in the same manner, after pre-baking,
30 minutes / 150 ° C, 30 minutes / 250 ° C, 30
The resin was cured by heating in the order of min / 300 ° C.

Further, an epoxy resin composition for encapsulating a semiconductor (EME-6300, manufactured by Sumitomo Bakelite Co., Ltd.) is provided on the cured film.
H) was formed into a size of 2 × 2 × 2 mm (width × length × height). The sealing epoxy resin composition formed on the cured polybenzoxazole resin film was peeled off using Tensilon, and the shear strength was measured. As a result, 3.2 kg / mm ²
Met.

Also, a photosensitive varnish is separately applied on a silicon wafer in the same manner, prebaked, and then placed in an oven.
0 minutes / 150 ° C, 30 minutes / 250 ° C, 30 minutes / 350 ° C
In this order to cure the resin. 1 m of the obtained coating film
Cut 100 pieces into the m-square, cut off the base film with cellophane tape, peeled off, and tried to peel off the coating from the silicon wafer. The number of peeled coatings (this was called the “number of peeling after curing” Is 0, which indicates that the cured film has excellent adhesion to the wafer. Further, after subjecting this silicon wafer to a pre-shear cooker (PCT) treatment at 125 ° C. and 2.3 atm for 100 hours, a cellophane tape was similarly adhered and peeled off, and the evaluation was carried out. (Referred to as “peeling number after high-temperature and high-humidity treatment”) was 0, and it was confirmed that the adhesion after the high-temperature and high-humidity treatment was excellent. Separately, a chemically amplified resist PEK-101 (manufactured by Sumitomo Chemical Co., Ltd.) is applied on a silicon wafer using a spin coater, and then dried on a hot plate at 90 ° C. for 2 minutes to obtain a coating having a thickness of about 1 μm. Was. An i-line stepper exposure machine NSR-220 is applied to this coating film.
Exposure was performed at 400 mJ / cm ² through a reticle using 5i11C (manufactured by Nikon Corporation).

The wafer is exposed to γ-butyl lactone vapor, subjected to post-exposure bake (PEB) at 110 ° C. for 1 minute on a hot plate, and then immersed in a 2.38% aqueous solution of tetramethylammonium hydroxide for 20 seconds. After dissolving and removing the exposed part by using
Rinse for 0 seconds. As a result, it was confirmed that it had a resolution of 0.30 μm. That is, it was found that the chemically amplified resist was not particularly affected by exposure to γ-butyl lactone vapor.

Example 2 A phenol compound in Example 1 was replaced with the following formula P-2, and trial production and evaluation were performed.

Example 3 The phenol compound in Example 1 was changed to the following formula P-3, and an organosilicon compound (S-
Trial production and evaluation were performed with the addition amount of 1) changed to 15 parts by weight.

Example 4 A trial production and evaluation were performed by changing the amount of the phenol compound (P-1) in Example 1 to 5 parts by weight and replacing the organosilicon compound with (S-2).

Example 5 In the synthesis of a polyamide in Example 1, diphenyl ether-4,4'-dicarboxylic acid chloride was used instead of terephthalic acid chloride and isophthalic acid chloride, and the compound was represented by the general formula (I).
Is the following formula X-1, Y is the following formula Y-3, a = 100, b
A polyamide (A2) consisting of = 0 was synthesized, and the others were subjected to the same trial manufacture and evaluation as in Example 1.

Example 6 In the synthesis of the polyamide in Example 1, diphenyl ether-4,4'- was used instead of terephthalic acid chloride and isophthalic acid chloride.
Dicarboxylic acid chloride is used and 2,2-bis (3
-Amino-4-hydroxyphenyl) hexafluoropropane, instead of 3,3'-diamino-4,4'-dihydroxydiphenylsulfone, is represented by the general formula (I)
X is the following formula X-2, Y is the following formula Y-3,
= 100 and b = 0, a polyamide (A3) was synthesized, and the other components were subjected to the same trial manufacture and evaluation as in Example 1.

Example 7 In the synthesis of the polyamide in Example 1, diphenyl ether-4,4'- was used instead of terephthalic acid chloride and isophthalic acid chloride.
A dicarboxylic acid chloride is used, and 3,3′-diamino-4,4′-dihydroxydiphenyl ether is used instead of 2,2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane to obtain a compound represented by the general formula ( X is the following formula X-3, Y is the following formula Y-3, and a = 1
A polyamide (A4) consisting of 00, b = 0 is synthesized,
Further, as diazoquinone, diazoquinone (Q
Using 2), a photosensitive resin composition was obtained, and otherwise the same trial production and evaluation as in Example 1 were performed.

Example 8 In the synthesis of the polyamide in Example 1, 2,2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane was reduced to 34.8 parts by weight (0.095 mol) instead. Was added with 1.24 parts by weight (0.005 mol) of 1,3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane, and represented by the general formula (I), wherein X was The following formulas X-1 and Y are a mixture of the following formulas Y-1 and Y-2, and Z is the following formula Z-1;
= 95, b = 5 to synthesize a polyamide (A5),
Otherwise, the same trial manufacture and evaluation as in Example 1 were performed.

Comparative Example 1 A trial production and evaluation were performed in Example 1 without adding a phenol compound.

Comparative Example 2 A prototype was produced and evaluated in Example 5 without adding a phenol compound.

Comparative Example 3 A prototype was produced and evaluated in Example 6 without adding a phenol compound.

Comparative Example 4 A trial production and evaluation were performed by reducing the amount of the phenol compound added in Example 1 to 0.5 part by weight.

Comparative Example 5 A trial production and evaluation were performed by increasing the amount of the phenol compound added in Example 1 to 60 parts by weight.

Comparative Example 6 A trial production and evaluation were performed by replacing the phenol compound in Example 1 with P-4.

Comparative Example 7 A trial production and evaluation were performed by replacing the phenolic compound in Example 1 with P-5.

Comparative Example 8 A phenol compound in Example 1 was replaced with P-6, and a prototype was produced and evaluated.

Comparative Example 9 A trial production and evaluation were performed with the addition amount of the organosilicon compound in Example 1 reduced to 0.1 part by weight.

Comparative Example 10 A trial production and evaluation were performed by replacing the organosilicon compound in Example 1 with S-3.

Comparative Example 11 In the evaluation of the effect of Example 1 on the chemically amplified resist, an experiment was conducted by replacing γ-butyllactone with N-methyl-2-pyrrolidone. As a result, it was confirmed that the resolution was reduced to 0.65 μm. The evaluation results of Examples 1 to 8 and Comparative Examples 1 to 11 are shown in Table 1.

[0074]

Embedded image

[0075]

Embedded image

[0076]

Embedded image

[0077]

Embedded image

[0078]

Embedded image

[0079]

[Table 1]

[0080]

According to the present invention, a pattern of high sensitivity and a high residual film ratio is obtained, and a positive photosensitive resin composition excellent in adhesion to a sealing resin and a substrate; It is possible to obtain a highly reliable semiconductor device in which a pattern of a polybenzoxazole resin having a high residual film ratio is formed on a semiconductor element using a positive photosensitive resin having excellent properties.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI C08L 77/06 C08L 77/06 G03F 7/037 G03F 7/037 7/039 601 7/039 601 7/075 501 7/075 501 H01L 21/027 H01L 21/30 502R

Claims (8)

[Claims] 1. A photosensitive diazoquinone compound (B) comprising 100 parts by weight of a polyamide (A) represented by the general formula (1)
1 to 100 parts by weight, 1 to 50 parts by weight of a phenol compound (C) represented by the general formula (2) and / or (3), and an organosilicon compound represented by the general formula (4) and / or (5) ( D) A positive photosensitive resin composition comprising 1 to 20 parts by weight and a solvent. Embedded image Embedded image Embedded image Embedded image Embedded image 2. The positive photosensitive resin composition according to claim 1, wherein the phenol compound (C) is a phenol compound represented by the general formula (6) and / or (7). Embedded image Embedded image 3. The phenolic compound (C) contains the compound represented by the general formula (8) or (9) alone or in the form of a mixture in an amount of 50% by weight or more of the whole phenolic compound (C). Positive photosensitive resin composition. Embedded image Embedded image 4. X in the polyamide of the general formula (1)
Is selected from the following (10): The positive photosensitive resin composition according to any one of claims 1 to 3. Embedded image 5. Y in the polyamide of the general formula (1)
Is selected from the following (11): The positive photosensitive resin composition according to any one of claims 1 to 4. Embedded image 6. The method according to claim 1, wherein the photosensitive diazoquinone compound (B) is selected from the following (12):
Item 6. The positive photosensitive resin composition according to item 1. Embedded image 7. The method according to claim 1, wherein the organosilicon compound (D) is selected from γ-glycidoxypropylmethoxysilane and / or γ-methacryloxypropyltrimethoxysilane. Positive photosensitive resin composition. 8. The positive photosensitive resin composition according to claim 1, wherein the organic solvent is γ-butyrolactone.