JP3449925B2 - Positive photosensitive resin composition - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a positive photosensitive resin composition capable of obtaining a highly sensitive pattern having a high residual film ratio and having excellent adhesion to a sealing resin.

[0002]

2. Description of the Related Art Conventionally, a polyimide resin having excellent heat resistance and excellent electrical and mechanical properties has been used for a surface protective film and an interlayer insulating film of a semiconductor device. There is a demand for significantly improved heat resistance cycle resistance, heat shock resistance, etc. due to the trend toward larger size, larger size, thinner package, smaller size, and surface mounting by solder reflow. Has become. On the other hand, a technique for imparting photosensitivity to the polyimide resin itself has recently been drawing attention, and examples thereof include a photosensitive polyimide resin represented by the following formula (6).

[0003]

[Chemical 9]

If this is used, part of the pattern forming process can be simplified, and it has the effect of shortening the process and improving the yield. However, since a solvent such as N-methyl-2-pyrrolidone is required during development, it is safe. There is a problem with the handling and handling.

Therefore, recently, a positive type photosensitive resin which can be developed with an alkaline aqueous solution has been developed. For example, Japanese Patent Publication No. 1-46862 discloses a positive photosensitive resin composed of a polybenzoxazole precursor and a diazoquinone compound. It has high heat resistance, excellent electrical characteristics, and fine workability, and has potential as a resin for not only wafer coating but also interlayer insulation. The development mechanism of this positive type photosensitive resin is that the diazoquinone compound in the unexposed area is insoluble in an alkaline aqueous solution.
Upon exposure, the diazoquinone compound undergoes a chemical change and becomes soluble in an alkaline aqueous solution. By utilizing the difference in solubility between the exposed portion and the unexposed portion and dissolving and removing the exposed portion, it is possible to create a coating film pattern only in the unexposed portion.

When these photosensitive resins are actually used,
Of particular importance is the sensitivity of the photosensitive resin. If the sensitivity is low, the exposure time becomes long and the throughput decreases.
Therefore, in order to improve the sensitivity of the photosensitive resin, for example, if the molecular weight of the base resin is simply reduced, the film thickness in the unexposed portion is increased during development, and thus the required film thickness cannot be obtained, or The problem that the pattern shape collapses occurs. Further, when such a treatment is taken, there is a problem that the mechanical properties of the cured film dehydrated and ring-closed by heat are remarkably lowered. For these reasons, there is a strong demand for the development of a photosensitive resin having a high sensitivity while satisfying the above characteristics.

When such a photosensitive resin is used as a surface protective film of a semiconductor element, a particular problem is the adhesiveness with a package sealing resin formed thereon in a later step. Since these mainly serve as a permanent protective film for interlayer insulation and exist between the circuit element and the sealing resin, if the adhesion is poor, peeling may occur at the interface and the semiconductor package may crack. Water may enter the cracks and cause electrical failure of the semiconductor.

[0008]

SUMMARY OF THE INVENTION It is an object of the present invention to provide a positive type photosensitive resin capable of obtaining a pattern having a high sensitivity and a high residual film rate and having excellent adhesion to a sealing resin. And

[0009]

The present invention is represented by 100 parts by weight of the polyamide (A) represented by the general formula (1), 1 to 100 parts by weight of the photosensitive diazoquinone compound (B) and the general formula (2). that the phenol compound (C) a Lupo di photosensitive resin composition of <br/> from 1 to 30 parts by weight, the general formula (1)
The polyamide shown has (a) a weight average molecular weight of 5,000.
-17,000, the molecular weight distribution calculated by Mw / Mn is 1
To (2) and (a) a weight average molecular weight of 3000
A polyamide having a molecular weight distribution of 0 to 70000 and a molecular weight distribution of 2 to 4;
Positive photosensitive resin composition characterized by being a mixture of
It is a thing.

[0010]

[Chemical 10]

[0011]

[Chemical 11]

The polyamide of the formula (1) comprises a bisaminophenol having a structure of X, a dicarboxylic acid having a structure of Y, and an acid anhydride having a structure of E. The polyamide at about 300 to 400 ° C. When heated, it undergoes dehydration ring closure and changes into a heat-resistant resin called polybenzoxazole. X of the polyamide (1) of the present invention is, for example,

[0013]

[Chemical 12]

However, the present invention is not limited to these. Among these, particularly preferable are:

[0015]

[Chemical 13]

It is selected from the above. In addition, Y in equation (1)
Is, for example,

[0017]

[Chemical 14]

However, the present invention is not limited to these. Among these, particularly preferable are:

[0019]

[Chemical 15]

It is selected from the above. Also, E of the formula (1)
Is, for example,

[0021]

[Chemical 16]

Examples thereof include, but are not limited to: Among these, particularly preferable are:

[0023]

[Chemical 17]

It is selected from the above. In the present invention, a dicarboxylic acid derivative having a structure of Y is reacted with a bisaminophenol having a structure of X to synthesize a polyamide, and then an acid anhydride having at least one alkenyl group or alkynyl group represented by E in the formula (1) is used. It is used to cap the terminal amino group. Furthermore, Z in equation (1) is
For example

[0025]

[Chemical 18]

However, the present invention is not limited to these. Z in the formula (1) is used when particularly excellent adhesion is required to a substrate such as a silicon wafer, and the usage ratio b is up to 40.0 mol%. If it exceeds 40.0 mol%, the solubility of the resin is extremely lowered, and the resin remains (scum) at the bottom of the pattern after development, and pattern processing cannot be performed. In addition, these X,
When using Y, E, and Z, one kind or a mixture of two or more kinds may be used.

In the positive type photosensitive resin of the present invention, for the purpose of high sensitivity, the polyamide component of the formula (1) has a weight average molecular weight of 5,000 to 17,000 and a molecular weight distribution determined by Mw / Mn of 1 to 2. A certain polyamide component, weight average molecular weight 30,000 to 70,000, molecular weight distribution 2
It is a mixture with the polyamide component which is 4, and it is necessary that 20 to 70% by weight of the low molecular weight component is contained in the whole amount. Such polyamides having different molecular weights can be easily obtained by changing the charged molar ratio of bisaminophenol and dicarboxylic acid derivative at the time of synthesis. With respect to the polyamide, it is difficult to synthesize a polymer having a weight average molecular weight of 5000 or less, and when a polymer having a weight average molecular weight of 70,000 or more is used, scum is generated after development, which is not preferable. Low molecular weight component is 20% by weight of the total amount of polyamide component
If less than 70% by weight, the effect of high sensitivity is reduced,
If it exceeds the range, the amount of film loss during development of the unexposed area increases, not only the pattern shape deteriorates, but also the mechanical properties of the film after heat curing deteriorate, which is not preferable.

The photosensitive diazoquinone compound used in the present invention is a compound having a 1,2-benzoquinonediazide or 1,2-naphthoquinonediazide structure, and is disclosed in US Pat. Nos. 2,772,972 and 2,797, 21
It is a substance known from No. 3, No. 3,669,658. For example, the following may be mentioned, but the invention is not limited thereto.

[0029]

[Chemical 19]

[0030]

[Chemical 20]

Of these, the following are particularly preferable in view of high sensitivity and high residual film rate.

[0032]

[Chemical 21]

The amount of the photosensitive diazoquinone compound (B) compounded in the polyamide (A) is 1 to 100 parts by weight based on 100 parts by weight of the polyamide. If the blending amount is less than 1 part by weight, the patterning property of the resin will be poor, and if it exceeds 100 parts by weight, the sensitivity will be significantly reduced, and the adhesion to the sealing resin and the tensile elongation of the film will be remarkably high. descend.

If desired, a dihydropyridine derivative may be added to the positive photosensitive resin composition of the present invention in order to enhance the photosensitivity. Examples of the dihydropyridine derivative include 2,6-dimethyl-3,5-diacetyl-
4- (2'-nitrophenyl) -1,4-dihydropyridine, 4- (2'-nitrophenyl) -2,6-dimethyl-3,5-dicarboethoxy-1,4-dihydropyridine, 4- (2 ′, 4′-Dinitrophenyl) -2,6
-Dimethyl-3,5-dicarbomethoxy-1,4-dihydropyridine and the like can be mentioned.

It is important that the positive photosensitive resin composition of the present invention further contains a phenol compound represented by the general formula (2).

[0036]

[Chemical formula 22]

A technique for adding a phenol compound to a positive resist composition is, for example, JP-A-3-200.
251, JP-A-3-200252, JP-A-3-200253, JP-A-3-200254, JP-A4-1650, JP-A-4-11260.
JP-A-4-12356, JP-A-4-12
357 publication. However, the phenol compounds as shown in these are less effective in improving the sensitivity even when used in the positive photosensitive resin containing polyamide as the base resin in the present invention.

However, when the phenol compound represented by the general formula (2) in the present invention is used, the dissolution rate in the exposed area is increased and the sensitivity is improved. Further, the film loss in the unexposed portion, which is observed when the molecular weight of the base resin is simply reduced to increase the sensitivity, is very small. Further, in the present invention, it was found that the addition of the phenol compound represented by the general formula (2) provides a positive photosensitive resin composition having improved adhesiveness with the encapsulating resin as a new characteristic. It was

Examples of the phenol compound represented by the general formula (2) include, but are not limited to, the following compounds.

[0040]

[Chemical formula 23]

[0041]

[Chemical formula 24]

[0042]

[Chemical 25]

[0043]

[Chemical formula 26]

Of these, particularly preferable in terms of sensitivity and residual film ratio are:

[0045]

[Chemical 27]

The compound represented by the general formula (4) or (5) is contained alone or as a mixture in an amount of 50% by weight or more in the total phenolic compound (C). The addition amount of the phenol compound (C) is preferably 1 to 30 parts by weight with respect to 100 parts by weight of the polyamide represented by the general formula (1). If the amount of the phenolic compound added is more than 30 parts by weight, the residual film rate will be remarkably reduced during development and precipitation will occur during freezing storage, resulting in impracticality. If the amount added is less than 1 part by weight, not only the adhesiveness with the sealing resin is lowered but also the effect of improving the sensitivity cannot be obtained.

If necessary, additives such as a leveling agent and a silane coupling agent can be added to the positive photosensitive resin composition of the present invention. In the present invention, these components are dissolved in a solvent to form a varnish for use.
Examples of the solvent include N-methyl-2-pyrrolidone, γ-butyrolactone, N, N-dimethylacetamide, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol. Monomethyl ether acetate, methyl lactate, ethyl lactate, butyl lactate, methyl-1,3-butylene glycol acetate, 1,3
-Butylene glycol-3-monomethyl ether, methyl pyruvate, ethyl pyruvate, methyl-3-methoxypropionate and the like can be mentioned, and they may be used alone or in combination.

In the method of using the positive photosensitive resin composition of the present invention, the composition is first applied to a suitable support such as a silicon wafer, a ceramic substrate, an aluminum substrate or the like.
In the case of a semiconductor device, the coating amount is such that the final film thickness after curing is 0.
Apply to a thickness of 1 to 20 μm. When the film thickness is 0.1 μm or less, it becomes difficult to sufficiently exhibit the function as the protective surface film of the semiconductor element, and when the film thickness is 20 μm or more, it becomes difficult to obtain a fine processing pattern. However, it takes time to process and the throughput is reduced.
Examples of the coating method include spin coating using a spinner, spray coating using a spray coater, dipping, printing, and roll coating.

Next, after prebaking at 60 to 130 ° C. to dry the coating film, a desired pattern shape is irradiated with actinic rays.
As the actinic rays, X rays, electron rays, ultraviolet rays, visible rays and the like can be used, but those having a wavelength of 200 to 500 nm are preferable. Next, the irradiated portion is dissolved and removed with a developing solution to obtain a relief pattern. Examples of the developing solution include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and ammonia water, and primary amines such as ethylamine and n-propylamine.
Amines, secondary amines such as diethylamine and di-n-propylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, tetramethylammonium hydroxide, tetraethylammonium An aqueous solution of an alkali such as a quaternary ammonium salt such as a hydroxide, and an aqueous solution in which an appropriate amount of a water-soluble organic solvent such as an alcohol such as methanol or ethanol or a surfactant is added can be preferably used. . As a developing method, methods such as spraying, paddle, dipping, and ultrasonic wave can be used.

Next, the relief pattern formed by development is rinsed. Distilled water is used as the rinse liquid. Next, heat treatment is performed to form an oxazole ring and obtain a final pattern having high heat resistance. The positive photosensitive resin composition according to the present invention is useful not only for semiconductor applications but also for interlayer insulation of multilayer circuits, cover coats of flexible copper clad boards, solder resist films, liquid crystal alignment films and the like.

[0051]

EXAMPLES The present invention will be specifically described below with reference to examples. Example 1 * Synthesis of polyamide Diphenyl ether-4,4'-dicarboxylic acid 1 mol and 1-hydroxy-1,2,3-benzotriazole 2 mol obtained by reacting dicarboxylic acid derivative 372.
4 g (0.93 mol) and hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane 36
6.3 g (1.0 mol) was placed in a 4-neck separable flask equipped with a thermometer, a stirrer, a raw material inlet, and a dry nitrogen gas inlet tube, and 3000 g of N-methyl-2-pyrrolidone.
Was added and dissolved. After that, use an oil bath at 75 ° C
Was reacted for 12 hours.

Next, 500 g of N-methyl-2-pyrrolidone
32.8 g (0.2 mol) of 5-norbornene-2,3-dicarboxylic acid anhydride dissolved in was added, and the reaction was terminated by further stirring for 12 hours. After filtering the reaction mixture, the reaction mixture was poured into a solution of water / methanol = 3/1, the precipitate was collected by filtration, washed thoroughly with water, and dried under vacuum to obtain the target polyamide (A-1). Obtained. The weight average molecular weight of A-1 was 40200, and the molecular weight distribution was 2.30. This time, the charged amount of the dicarboxylic acid derivative obtained by reacting 1 mol of diphenyl ether-4,4′-dicarboxylic acid with 2 mol of 1-hydroxy-1,2,3-benzotriazole was 328.4 g (0.82). Mol) and similarly synthesized to obtain a polyamide (A-2) having a weight average molecular weight of 10600 and a molecular weight distribution of 1.40.

* Preparation of positive photosensitive resin composition 45 g of synthesized polyamide (A-1), polyamide (A-1)
-2), after dissolving 55 g of the photosensitive diazoquinone compound (Q-1) having the structure of the following formula and 15 g of the phenol compound (P-1) having the structure of the following formula in 200 g of N-methyl-2-pyrrolidone , 0.2 μm Teflon filter to obtain a photosensitive resin composition.

* Characteristic Evaluation This positive photosensitive resin composition was applied onto a silicon wafer using a spin coater and then dried at 120 ° C. for 4 minutes on a hot plate to obtain a coating film having a thickness of about 3 μm. . To this coating, g-line stepper exposure machine NSR-1505G3A
50mJ / c through the reticle (manufactured by Nikon Corporation)
Increase from m ² by 10 mJ / cm ² to 540 mJ / cm
Exposure was performed up to ² . Next, the exposed portion was dissolved and removed by immersing it in a 1.40% tetramethylammonium hydroxide aqueous solution for 60 seconds, and then rinsed with pure water for 30 seconds. As a result, it was confirmed that the pattern was formed from the portion irradiated with the exposure amount of 180 mJ / cm ² and that there was no scum at the bottom of the pattern (sensitivity was 180 mJ / cm 2.
² ). Residual film rate at this time (film thickness after development / film thickness before development ×
100) showed a very high value of 92.0%.

Separately, a positive type photosensitive resin composition was similarly applied onto two silicon wafers, prebaked, and then placed in an oven for 30 minutes / 150 ° C., 30 minutes / 250 ° C.
After heating in the order of 30 minutes / 350 ° C to cure the resin, 1
Two pieces of epoxy resin composition for semiconductor encapsulation (Sumitomo Bakelite Co., Ltd., EME-6300H) were applied on the cured film.
It was molded into a size of × 2 × 2 mm (horizontal × vertical × height). The shear strength of the encapsulating epoxy resin composition formed on the cured polybenzoxazole resin film was measured using Tensilon, and the result was 3.6 kg / mm ² . The remaining one was diced to have a width of 10 mm, immersed in a 2% hydrogen fluoride aqueous solution to sufficiently wash the film peeled from the silicon wafer with water and dried. When the tensile strength of this film was measured with Tensilon, it was 1
A high value of 0.5 kg / mm ² was obtained.

Example 2 366.3 g (1.0 mol) of hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane in Example 1 was added to 3,3
In place of 28-0.3 g (1.0 mol) of'-diamino-4,4'-dihydroxydiphenyl sulfone, X is represented by the following formula X-2 and Y is represented by the following formula Y-.
In 1, a polyamide having a = 100 and b = 0 was synthesized. The weight average molecular weight of the polyamide (A-3) obtained when the dicarboxylic acid derivative in Example 1 was 0.93 mol was 39000 and the molecular weight distribution was 2.25.
The weight average molecular weight of the polyamide (A-4) obtained at 82 mol was 9300, and the molecular weight distribution was 1.32. Further, the same evaluation as in Example 1 was performed except that the addition amount of each component was changed as shown in Table 1.

Example 3 In the synthesis of the dicarboxylic acid derivative in Example 1, diphenyl ether-4,4 ′ was used.
-Instead of 1 mol of dicarboxylic acid, 1 mol of 4,4'-benzophenonedicarboxylic acid, hexafluoro-2,
Instead of 366.3 g (1 mol) of 2-bis (3-amino-4-hydroxyphenyl) propane, 3,3′-diamino-4,4′-dihydroxydiphenyl ether 23
2.2 g (1 mol) of the compound represented by the general formula (1),
X is the following formula X-3, Y is the following formula Y-2, and a = 100,
A polyamide having b = 0 was synthesized. The weight average molecular weight of the polyamide (A-5) obtained when the dicarboxylic acid derivative using 4,4′-benzophenonedicarboxylic acid was 0.93 mol was 35,000 and the molecular weight distribution was 2.17.
Similarly, the polyamide (A-
The weight average molecular weight of 6) is 8900, and the molecular weight distribution is 1.3.
It was 0. A when preparing a positive photosensitive resin composition
The weight of each of -5 and A-6 was 50 g. Further, the same evaluation as in Example 1 was performed except that the addition amount of each component was changed as shown in Table 1.

Example 4 In the synthesis of polyamide in Example 1, hexafluoro-2,2-bis (3-
Amino-4-hydroxyphenyl) propane was added to 348.
The amount was reduced to 0 g (0.95 mol), and 12.4 g (0.05 mol) of 1,3-bis (3-aminopropyl) -1,1,3,3-tetramethyldisiloxane was added instead. (1), X is the following formula X-1, Y is the following formula Y
A polyamide having -1 and Z represented by the following formula Z-1 and a = 95 and b = 5 was synthesized. Diphenyl ether-4,4
'-Dicarboxylic acid derivative using dicarboxylic acid is 0.9
The weight average molecular weight of the polyamide (A-7) obtained at 3 mol was 41300 and the molecular weight distribution was 2.33. Similarly, the weight average molecular weight of the polyamide (A-8) obtained at 0.82 mol was The molecular weight distribution was 12000 with a molecular weight distribution of 1.42. The weights of A-7 and A-8 at the time of producing the positive photosensitive resin composition were 42 g and 58 g, respectively. Others were evaluated in the same manner as in Example 1.

Example 5 380.4 g (0.95 mol) and 336.4 g (0.84 mol) of the charged amount of the dicarboxylic acid derivative using diphenyl ether-4,4'-dicarboxylic acid in Example 1 were respectively charged. ), Represented by the general formula (1), X is the following formula X-1, and Y is the following formula Y-1.
Then, a polyamide having a = 100 and b = 0 was synthesized. The weight average molecular weight of the polyamide (A-9) obtained when the dicarboxylic acid derivative was 0.95 mol was 59000,
The molecular weight distribution was 3.06, and similarly, the weight average molecular weight of the polyamide (A-10) obtained at 0.84 mol was 15
600, the molecular weight distribution was 1.56. The weight of A-9 and A-10 at the time of producing the positive photosensitive resin composition was 40 g and 60 g, respectively. Further, the same evaluation as in Example 1 was performed except that the addition amount of each component was changed as shown in Table 1.

Example 6 Example 1 was repeated except that the diazoquinone compound (Q-1) in Example 1 was replaced by the following formula (Q-2) and the addition amount of each component was changed as shown in Table 1. The same evaluation as was done. Example 7 Phenol compound (P-
The same evaluation as in Example 1 was performed except that 1) was changed to the following formula (P-2) and the addition amount of each component was changed as shown in Table 1. Example 8 Phenol compound (P-
The same evaluation as in Example 1 was performed except that the addition amount of 1) was changed to 5 g.

Comparative Example 1 In Example 1, the molar amount of the dicarboxylic acid derivative charged when synthesizing the polyamide (A-2) was changed from 0.82 mol to 0.91 mol, and the weight average molecular weight was 25,000. A polyamide (A-11) having a molecular weight distribution of 1.89 was obtained. Further, the same evaluation as in Example 1 was performed except that the addition amount of each component was changed as shown in Table 1. << Comparative Example 2 >> In Example 1, the polyamide (A-1)
The molar amount of the dicarboxylic acid derivative charged when synthesizing was changed from 0.93 mol to 0.96 mol, and a polyamide (A- having a weight average molecular weight of 79,200 and a molecular weight distribution of 3.42) was prepared.
12) was obtained. Further, the same evaluation as in Example 1 was performed except that the addition amount of each component was changed as shown in Table 1. << Comparative Example 3 >> In Example 1, the polyamide (A-1)
The molar amount of the dicarboxylic acid derivative charged when synthesizing was changed from 0.93 mol to 0.90 mol, and a polyamide (A- having a weight average molecular weight of 22,000 and a molecular weight distribution of 1.77)
13) was obtained. Further, the same evaluation as in Example 1 was performed except that the addition amount of each component was changed as shown in Table 1. << Comparative Example 4 >> In Example 2, the weights of A-3 and A-4 when the positive photosensitive resin composition was prepared were 95 g and 5 g, respectively. Further, the same evaluation as in Example 1 was performed except that the addition amount of each component was changed as shown in Table 1.

Comparative Example 5 In Example 2, the weight of A-3 and A-4 at the time of preparing the positive photosensitive resin composition was 10 g and 90 g, respectively. Further, the same evaluation as in Example 1 was performed except that the addition amount of each component was changed as shown in Table 1. << Comparative Example 6 >> In Example 1, the phenol compound (P
The same evaluation as in Example 1 was performed except that the addition amount of -1) was changed to 0 g. << Comparative Example 7 >> In Example 1, the phenol compound (P
The same evaluation as in Example 1 was performed except that the addition amount of -1) was changed to 0.5 g and the addition amount of each component was changed as shown in Table 1. << Comparative Example 8 >> In Example 1, the phenol compound (P
The same evaluation as in Example 1 was performed except that the addition amount of -1) was changed to 60 g and the addition amount of each component was changed as shown in Table 1. The evaluation results of Examples 1 to 8 and Comparative Examples 1 to 8 are shown in Table 2.

[0063]

[Chemical 28]

[0064]

[Chemical 29]

[0065]

[Chemical 30]

[0066]

[Table 1]

[0067]

[Table 2]

[0068]

According to the present invention, it is possible to obtain a positive photosensitive resin capable of forming a pattern having high sensitivity and a high residual film ratio and having excellent adhesion to a sealing resin.

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI G03F 7/037 G03F 7/037 H01L 21/027 H01L 21/30 502R (56) Reference JP-A-8-123034 (JP, A) ) JP-A-5-197153 (JP, A) JP-A-9-127697 (JP, A) JP-A-9-302221 (JP, A) JP-A-7-500932 (JP, A) (58) Field (Int.Cl. ⁷ , DB name) G03F ^7/ 00-7/42

Claims (8)

(57) [Claims] 1. A polyamide (A) represented by the general formula (1).
100 parts by weight of photosensitive diazoquinone compound (B) 1-1
00 A weight of a phenol compound represented by the general formula (2) (C) Lupolen di photosensitive resin composition from 1 to 30 parts by weight of a polyamide is represented by general formula (1),
(A) Weight average molecular weight 5,000 to 17,000, Mw / M
a polyamide having a molecular weight distribution of 1-2 obtained by n;
(A) Weight average molecular weight 30,000 to 70,000, molecular weight
Characterized by being a mixture with a polyamide having a distribution of 2-4
Positive type photosensitive resin composition to be characterized. [Chemical 1] [Chemical 2] 2. X in the polyamide of the general formula (1) is
The positive photosensitive resin composition according to claim 1, which is selected from the following. [Chemical 3] 3. Y in the polyamide of the general formula (1) is
The positive photosensitive resin composition according to claim 1, which is selected from the following. [Chemical 4] 4. E in the polyamide of the general formula (1) is
The positive photosensitive resin composition according to claim 1, 2 or 3, selected from the following. [Chemical 5] 5. A polyamide component represented by the general formula (1), wherein the component (a) which is a low molecular weight component is 20 to 7 in total.
0% by weight is contained, Claim 1, 2,
The positive photosensitive resin composition according to 3 or 4 . 6. The positive photosensitive resin composition according to claim 1, wherein the photosensitive diazoquinone compound (B) is selected from the following. [Chemical 6] 7. The positive photosensitive resin composition according to claim 1, wherein the phenol compound (C) is a phenol compound represented by the general formula (3). [Chemical 7] 8. A phenol compound (C) is represented by the general formula (4):
The positive photosensitive resin composition according to claim 1 or 7 , which is a compound represented by (5) and contains 50% by weight or more of the entire phenol compound (C) in the form of a single compound or a mixture. [Chemical 8]