JPH1079491A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPH1079491A
JPH1079491A JP9185264A JP18526497A JPH1079491A JP H1079491 A JPH1079491 A JP H1079491A JP 9185264 A JP9185264 A JP 9185264A JP 18526497 A JP18526497 A JP 18526497A JP H1079491 A JPH1079491 A JP H1079491A
Authority
JP
Japan
Prior art keywords
insulating film
film
forming
semiconductor device
contact hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9185264A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1079491A5 (enExample
Inventor
Kazuo Itabashi
和夫 板橋
Osamu Tsuboi
修 壺井
Yuji Yokoyama
雄二 横山
Kenichi Inoue
憲一 井上
Koichi Hashimoto
浩一 橋本
Wataru Nunofuji
渉 布藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9185264A priority Critical patent/JPH1079491A/ja
Publication of JPH1079491A publication Critical patent/JPH1079491A/ja
Publication of JPH1079491A5 publication Critical patent/JPH1079491A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP9185264A 1996-07-10 1997-07-10 半導体装置およびその製造方法 Pending JPH1079491A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9185264A JPH1079491A (ja) 1996-07-10 1997-07-10 半導体装置およびその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8-181057 1996-07-10
JP18105796 1996-07-10
JP9185264A JPH1079491A (ja) 1996-07-10 1997-07-10 半導体装置およびその製造方法

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2005100898A Division JP4391438B2 (ja) 1996-07-10 2005-03-31 半導体装置の製造方法
JP2005100899A Division JP2005244251A (ja) 1996-07-10 2005-03-31 半導体装置とその製造方法
JP2005100900A Division JP2005252283A (ja) 1996-07-10 2005-03-31 半導体装置とその製造方法

Publications (2)

Publication Number Publication Date
JPH1079491A true JPH1079491A (ja) 1998-03-24
JPH1079491A5 JPH1079491A5 (enExample) 2005-09-15

Family

ID=26500381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9185264A Pending JPH1079491A (ja) 1996-07-10 1997-07-10 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPH1079491A (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0999585A1 (fr) * 1998-11-05 2000-05-10 STMicroelectronics SA Fabrication de mémoire dram et de transistors mos
JP2000156483A (ja) * 1998-11-18 2000-06-06 Samsung Electronics Co Ltd 接合スペ―サを備えたコンケ―ブキャパシタの製造方法
JP2001036044A (ja) * 1999-06-30 2001-02-09 Hyundai Electronics Ind Co Ltd 半導体素子のキャパシタ製造方法
JP2002026295A (ja) * 2000-06-19 2002-01-25 Hynix Semiconductor Inc 高誘電体キャパシタ及びその製造方法
JP2002512450A (ja) * 1998-04-16 2002-04-23 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド ポリキャップの除去により容易なポリ１コンタクトが得られるｎａｎｄ型フラッシュメモリ装置の製造方法
US6384441B1 (en) 2000-03-31 2002-05-07 Fujitsu Limited Semiconductor device and method of manufacturing the same
KR100351897B1 (ko) * 1999-12-31 2002-09-12 주식회사 하이닉스반도체 반도체 소자 제조방법
JP2003152104A (ja) * 2001-11-14 2003-05-23 Fujitsu Ltd 半導体装置及びその製造方法
EP1061573A3 (en) * 1999-06-17 2003-10-15 Fujitsu Limited Semiconductor device and method of manufacturing the same
JP2005260082A (ja) * 2004-03-12 2005-09-22 Toshiba Corp 磁気ランダムアクセスメモリ
JP2007134699A (ja) * 1999-07-22 2007-05-31 Micron Technology Inc キャパシタ・オーバー・ビットラインメモリセルの形成方法
JP2007258747A (ja) * 2002-08-30 2007-10-04 Matsushita Electric Ind Co Ltd 半導体装置
JP2010056578A (ja) * 2009-12-07 2010-03-11 Fujitsu Microelectronics Ltd 半導体装置の製造方法
JP2012142599A (ja) * 1999-10-13 2012-07-26 Sony Corp 半導体装置およびその製造方法

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002512450A (ja) * 1998-04-16 2002-04-23 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド ポリキャップの除去により容易なポリ１コンタクトが得られるｎａｎｄ型フラッシュメモリ装置の製造方法
FR2785720A1 (fr) * 1998-11-05 2000-05-12 St Microelectronics Sa Fabrication de memoire dram et de transistors mos
EP0999585A1 (fr) * 1998-11-05 2000-05-10 STMicroelectronics SA Fabrication de mémoire dram et de transistors mos
US6432771B1 (en) 1998-11-05 2002-08-13 Stmicroelectronics Sa DRAM and MOS transistor manufacturing
JP2000156483A (ja) * 1998-11-18 2000-06-06 Samsung Electronics Co Ltd 接合スペ―サを備えたコンケ―ブキャパシタの製造方法
EP1061573A3 (en) * 1999-06-17 2003-10-15 Fujitsu Limited Semiconductor device and method of manufacturing the same
US7074625B2 (en) 1999-06-17 2006-07-11 Fujitsu Limited Semiconductor device and method of manufacturing the same
US6911686B1 (en) 1999-06-17 2005-06-28 Fujitsu Limited Semiconductor memory device having planarized upper surface and a SiON moisture barrier
JP2001036044A (ja) * 1999-06-30 2001-02-09 Hyundai Electronics Ind Co Ltd 半導体素子のキャパシタ製造方法
JP2007134699A (ja) * 1999-07-22 2007-05-31 Micron Technology Inc キャパシタ・オーバー・ビットラインメモリセルの形成方法
JP2015149504A (ja) * 1999-10-13 2015-08-20 ソニー株式会社 半導体装置およびその製造方法
JP2017017359A (ja) * 1999-10-13 2017-01-19 ソニー株式会社 半導体装置およびその製造方法
JP2015165601A (ja) * 1999-10-13 2015-09-17 ソニー株式会社 半導体装置
JP2012142599A (ja) * 1999-10-13 2012-07-26 Sony Corp 半導体装置およびその製造方法
JP2014140081A (ja) * 1999-10-13 2014-07-31 Sony Corp 半導体装置およびその製造方法
KR100351897B1 (ko) * 1999-12-31 2002-09-12 주식회사 하이닉스반도체 반도체 소자 제조방법
US6475858B2 (en) 2000-03-31 2002-11-05 Fujitsu Limited Method of manufacturing semiconductor device
US6384441B1 (en) 2000-03-31 2002-05-07 Fujitsu Limited Semiconductor device and method of manufacturing the same
JP2002026295A (ja) * 2000-06-19 2002-01-25 Hynix Semiconductor Inc 高誘電体キャパシタ及びその製造方法
JP2003152104A (ja) * 2001-11-14 2003-05-23 Fujitsu Ltd 半導体装置及びその製造方法
JP2007258747A (ja) * 2002-08-30 2007-10-04 Matsushita Electric Ind Co Ltd 半導体装置
JP2005260082A (ja) * 2004-03-12 2005-09-22 Toshiba Corp 磁気ランダムアクセスメモリ
JP2010056578A (ja) * 2009-12-07 2010-03-11 Fujitsu Microelectronics Ltd 半導体装置の製造方法

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