JPH1065103A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH1065103A
JPH1065103A JP8217034A JP21703496A JPH1065103A JP H1065103 A JPH1065103 A JP H1065103A JP 8217034 A JP8217034 A JP 8217034A JP 21703496 A JP21703496 A JP 21703496A JP H1065103 A JPH1065103 A JP H1065103A
Authority
JP
Japan
Prior art keywords
pad
integrated circuit
terminal
semiconductor integrated
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8217034A
Other languages
Japanese (ja)
Inventor
Akira Kuwata
明 桑田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP8217034A priority Critical patent/JPH1065103A/en
Publication of JPH1065103A publication Critical patent/JPH1065103A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05553Shape in top view being rectangular
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit which has improved counter noise characteristics and electric characteristics, rediffusion is unnecessary and the number of optimum power sources or earthing terminals can be set by the switching of bonding only. SOLUTION: A power source pad 103 is connected to a terminal lead 109 in a one-to-one state, and an earthing pad 105 is connected to a terminal lead 110 in a one-to-one state. However, a power source pad 104 and a functional pad 101 are formed in a pair, and the bonding connection with a terminal lead 108 can be selectively conducted. Also, an earthing pad 106 and a functional pad 102 are formed in a pair, and they can be selectively bonding-connected with a terminal lead 107. Terminal leads 107 and 108 are connected to the functional pads 101 and 102 respectively.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、情報処理装置に係
る半導体集積回路に関し、特に、メモリ,マイクロコン
ピュ−タなどの半導体集積回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor integrated circuit according to an information processing apparatus, and more particularly, to a semiconductor integrated circuit such as a memory and a microcomputer.

【0002】[0002]

【従来の技術】従来の半導体集積回路では、図7(従来
の半導体集積回路の1例を示すブロック図)に示すよう
に、各端子(電源端子301,302,303,304)は一意的に決
められている。そして、集積回路内で電源系をいくつか
に分割し、1ヶ所のノイズが他へ伝搬するのを防ぐよう
に構成されている。図7において、301は外周部305への
電源端子,302はCPU部306への電源端子,303はデジ
タル系周辺機能部への電源端子,304はアナログ系周辺
機能部への電源端子である。
2. Description of the Related Art In a conventional semiconductor integrated circuit, as shown in FIG. 7 (a block diagram showing an example of a conventional semiconductor integrated circuit), each terminal (power supply terminals 301, 302, 303, 304) is uniquely defined. It is decided. Then, the power supply system is divided into several parts in the integrated circuit to prevent one noise from propagating to another. 7, reference numeral 301 denotes a power terminal to the outer peripheral portion 305, 302 denotes a power terminal to the CPU 306, 303 denotes a power terminal to the digital peripheral function unit, and 304 denotes a power terminal to the analog peripheral function unit.

【0003】ところで、機能端子は、集積回路が内蔵す
る機能仕様によって決められるが、電源端子や接地端子
は、同時動作する端子の総数やスイッチング頻度と、チ
ップ全体の端子総数から機能端子を差し引いた数で決め
られる場合が多い。
By the way, the function terminals are determined by the function specifications incorporated in the integrated circuit. The power terminals and the ground terminals are obtained by subtracting the function terminals from the total number of terminals operating simultaneously and the switching frequency and the total number of terminals of the entire chip. Often determined by number.

【0004】そして、予めシュミレ−ション等により充
分な数の電源端子,接地端子が確保されていれば問題は
ないが、パッケージの制約などにより必ずしも充分確保
できない場合がある。また、シュミレ−ションの精度や
実装基板の対ノイズ特性にも大きく影響されるため、設
計当初から最適な電源端子,接地端子の数を決めるのは
難しい。使用する側からみれば、端子総数はできるだけ
少なく、しかし、機能端子数はできるだけ多くするこ
と、即ち電源/接地端子の数はできるだけ少なくするこ
とが要望されているが、その一方で、ノイズ特性は確保
しなければならないという制約もある。
There is no problem if a sufficient number of power supply terminals and ground terminals are secured in advance by simulation or the like, but it may not always be possible due to restrictions on the package. In addition, it is difficult to determine the optimal number of power supply terminals and ground terminals from the beginning of design because the precision of the simulation and the noise characteristics of the mounting board are greatly affected. From the point of view of the user, it is desired that the total number of terminals is as small as possible, but the number of functional terminals is as large as possible, that is, the number of power / ground terminals is as small as possible. There is also a constraint that it must be secured.

【0005】この相反する要求を満たすために、集積回
路としても限られた電源/接地端子で最大限の効果を出
すために、次のようなことが考えられている。例えば、
前記したように[前掲の図7(従来の半導体集積回路の
1例を示すブロック図)に示すように]、集積回路内で
電源系をいくつかに分割し、1ヶ所のノイズが他へ伝搬
するのを防ぐように構成されている。
In order to satisfy the conflicting demands, the following has been considered in order to obtain the maximum effect with limited power supply / ground terminals even in an integrated circuit. For example,
As described above (as shown in FIG. 7 (a block diagram showing an example of a conventional semiconductor integrated circuit)), the power supply system is divided into several parts in the integrated circuit, and one noise propagates to the other. It is configured to prevent that.

【0006】このように、従来の半導体回路では、一般
に、入出力バッファによりノイズを発生し易い外周部30
5やノイズの影響を受けやすいアナログ部308は、他の電
源系から分離するように構成されている(図7参照)。ま
た、図8(従来の半導体集積回路の他の例を示すブロッ
ク図)に示すように、1つの電源端子から複数の電源パ
ッドにボンディングし、強化するなどの工夫がなされて
いる場合も多い。なお、図8において、電源端子301,3
02,303,304は、前掲の図7と同様、301は外周部305へ
の電源端子,302はCPU部306への電源端子,303はデ
ジタル系周辺機能部への電源端子,304はアナログ系周
辺機能部への電源端子である。
As described above, in the conventional semiconductor circuit, generally, the outer peripheral portion 30 where noise is likely to be generated by the input / output buffer.
The analog section 308 that is easily affected by the noise 5 and noise is configured to be separated from other power supply systems (see FIG. 7). In addition, as shown in FIG. 8 (a block diagram showing another example of a conventional semiconductor integrated circuit), there are many cases where a device such as bonding from one power supply terminal to a plurality of power supply pads is reinforced. In FIG. 8, the power supply terminals 301, 3
7, reference numeral 301 denotes a power supply terminal to the outer peripheral portion 305, reference numeral 302 denotes a power supply terminal to the CPU unit 306, reference numeral 303 denotes a power supply terminal to the digital system peripheral function unit, and reference numeral 304 denotes an analog system. This is a power supply terminal to the peripheral function unit.

【0007】[0007]

【発明が解決しようとする課題】前述したように、従来
からノイズ対策はとられてきたが、それでも充分な効果
が上げられない場合もある。特に、従来の半導体集積回
路では、予め機能端子や電源/接地端子の数が固定され
ているため、電源/接地端子の数を増やして対ノイズ特
性を改善することが難しいという問題点を有している。
As described above, noise countermeasures have conventionally been taken, but there are cases where sufficient effects cannot be obtained. In particular, the conventional semiconductor integrated circuit has a problem that it is difficult to improve the noise immunity characteristics by increasing the number of power / ground terminals because the number of function terminals and the number of power / ground terminals are fixed in advance. ing.

【0008】また、仕様変更により(機能端子の数を減
らして)電源/接地端子を増やす場合にも、一度製造し
た集積回路に対し、大幅なレイアウト変更が必要にな
り、レイアウト修正,再拡散に時間がかかるという欠点
を有していた。
Also, when the number of power / ground terminals is increased by changing the specifications (by reducing the number of functional terminals), a large layout change is required for the integrated circuit once manufactured, and the layout correction and re-spreading are required. There was a disadvantage that it took time.

【0009】本発明は、上記問題点,欠点に鑑み成され
たものであって、その目的とするところは、対ノイズ特
性や電気的特性を改善し得る半導体集積回路を提供する
ことにあり、また、再レイアウト,再拡散を必要とせ
ず、ボンディング切り換えのみによって最適な電源また
は接地端子の数を設定し得る半導体集積回路を提供する
ことにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems and disadvantages, and has as its object to provide a semiconductor integrated circuit capable of improving noise immunity characteristics and electrical characteristics. Another object of the present invention is to provide a semiconductor integrated circuit which does not require re-layout and re-spreading and can set an optimal number of power supply or ground terminals only by switching bonding.

【0010】[0010]

【課題を解決するための手段】本発明に係る半導体集積
回路は、機能パッドとボンディング切り換えによって接
続を変えられる電源印加用の電源パッド、もしくは、接
地電位用の接地パッドを有する構成からなり、これによ
り、前記目的とする半導体集積回路を提供するものであ
る。
A semiconductor integrated circuit according to the present invention has a structure having a power supply pad for applying power or a ground pad for ground potential, the connection of which can be changed by bonding switching with a function pad. Accordingly, the object of the present invention is to provide a semiconductor integrated circuit.

【0011】即ち、本発明は、「電源印加用の電源パッ
ド、接地電位用の接地パッド、機能信号の入出力を行う
機能パッドを有する半導体集積回路において、機能パッ
ドと電源パッド、または、機能パッドと接地パッドを
“対”で有し、ボンディング切り替えにより特定の端子
を、電源端子と機能端子、または、接地端子と機能端子
に切り替えることができる構成からなることを特徴とす
る半導体集積回路。」(請求項1)を要旨とするものであ
る。また、本発明は、上記半導体集積回路において、ボ
ンディング切り換え用の電源パッド/接地パッド群を機
能パッドの外側に千鳥状に配置することを特徴とする
(請求項2)。
That is, the present invention provides a semiconductor integrated circuit having a power pad for applying power, a ground pad for ground potential, and a function pad for inputting and outputting a function signal. And a ground pad in a "pair", and a specific terminal can be switched between a power terminal and a functional terminal or a ground terminal and a functional terminal by bonding switching. " The gist of the present invention is (claim 1). According to the present invention, in the semiconductor integrated circuit, a power supply pad / grounding pad group for bonding switching is arranged in a staggered manner outside the functional pad.
(Claim 2).

【0012】[0012]

【発明の実施の形態】次に、本発明の実施の形態を含め
本発明を詳細に説明する。本発明に係る半導体集積回路
は、設計段階で電源/接地用パッドを端子の数よりも多
く設け、ノイズ特性を含む電気的特性評価結果によって
機能端子と電源/接地端子をボンディング切り換えによ
り変更できる点を特徴とし、この点が従来の技術と異な
るところである。
Next, the present invention will be described in detail including embodiments of the present invention. In the semiconductor integrated circuit according to the present invention, the number of power / ground pads is larger than the number of terminals in the design stage, and the functional terminal and the power / ground terminal can be changed by bonding switching according to the result of the electrical characteristic evaluation including the noise characteristic. This point is different from the conventional technology.

【0013】また、「電源パッドをボンディングするか
否かによって動作モ−ドの切り換え端子と兼用するこ
と」は、従来から可能であったが(特開平3−217051号公
報参照)、本発明に係る半導体集積回路では、汎用的な
機能端子とボンディング切り換えを可能とすることで、
より自由度があり、電源/接地端子の数にも制限がなく
なるという利点を有している。
[0013] It has been conventionally possible to "also use the operation mode switching terminal depending on whether or not the power supply pad is bonded" (see Japanese Patent Application Laid-Open No. Hei 3-217051). In such a semiconductor integrated circuit, by enabling general-purpose function terminals and bonding switching,
There is an advantage that there is more freedom and the number of power / ground terminals is not limited.

【0014】[0014]

【実施例】次に、本発明に係る半導体集積回路の実施例
について、図1〜図6を参照して説明するが、本発明
は、以下の実施例に限定されるものではなく、前記した
本発明の要旨の範囲内で種々の変形,変更ができるもの
である。
Next, an embodiment of a semiconductor integrated circuit according to the present invention will be described with reference to FIGS. 1 to 6, but the present invention is not limited to the following embodiment, and Various modifications and changes can be made within the scope of the present invention.

【0015】(実施例1)図1〜図4は、本発明の第1
の実施例(実施例1)を説明する図であって、ボンディン
グ接続の各例を示す半導体集積回路のブロックおよび接
続図である。図1〜図4において、100は半導体集積回
路、101,102は機能パッド、103,104は電源パッド、10
5,106は接地パッド、107〜110は端子リ−ドである。こ
の他に機能パッドを複数有している(図示せず)。
(Embodiment 1) FIGS. 1 to 4 show a first embodiment of the present invention.
FIG. 4 is a diagram for explaining the embodiment (Embodiment 1) of the present invention, and is a block diagram and connection diagram of a semiconductor integrated circuit showing each example of bonding connection. 1 to 4, 100 is a semiconductor integrated circuit, 101 and 102 are functional pads, 103 and 104 are power supply pads, 10
5, 106 are ground pads, and 107 to 110 are terminal leads. In addition, it has a plurality of functional pads (not shown).

【0016】電源パッド103は、端子リ−ド109と“1対
1”で接続され、接地パッド105は端子リ−ド110と“1
対1”で接続されているが、電源パッド104は機能パッ
ド101と“対”となっており、端子リ−ド108とのボンデ
ィング接続を選択できるように構成されている。また、
同様に接地パッド106は、機能パッド102と“対”になっ
ており、端子リ−ド107とのボンディング接続を選択で
きるように構成されている。以下、このボンディング接
続の各例を図1〜図4に基づいて説明する。
The power supply pad 103 is connected to the terminal lead 109 on a one-to-one basis, and the ground pad 105 is connected to the terminal lead 110 and the terminal lead 109.
The power supply pad 104 is paired with the function pad 101, and is configured to be able to select a bonding connection with the terminal lead 108.
Similarly, the ground pad 106 is "paired" with the functional pad 102, and is configured so that the bonding connection with the terminal lead 107 can be selected. Hereinafter, each example of this bonding connection will be described with reference to FIGS.

【0017】図1(ボンディング接続の一例)では、ボン
ディング接続可能な端子リ−ド108と107は、それぞれ機
能パッド101と102に接続されており、半導体集積回路10
0における電源端子は109の1本、接地端子は110の1本
となっている。
In FIG. 1 (an example of bonding connection), terminal leads 108 and 107 capable of bonding connection are connected to functional pads 101 and 102, respectively.
At 0, one power supply terminal 109 and one ground terminal 110 are provided.

【0018】図2(ボンディング接続の他の例)では、ボ
ンディング接続可能な端子リ−ド108は機能パッド101
に、同端子リ−ド107は接地パッド106にそれぞれ接続さ
れており、半導体集積回路100における電源端子は109の
1本、接地端子は110,107の2本となっている。
In FIG. 2 (another example of bonding connection), a terminal lead 108 capable of bonding connection is a functional pad 101.
The terminal leads 107 are connected to the ground pads 106, respectively. In the semiconductor integrated circuit 100, one power supply terminal 109 is provided, and two ground terminals 110 and 107 are provided.

【0019】図3(ボンディング接続のその他の例)で
は、ボンディング接続可能な端子リ−ド107は機能パッ
ド102に、同端子リ−ド108は電源パッド104にそれぞれ
接続されており、半導体集積回路100における電源端子
は108,109の2本、接地端子は110の1本となってい
る。
In FIG. 3 (another example of bonding connection), a terminal lead 107 capable of bonding connection is connected to a function pad 102, and the same terminal lead 108 is connected to a power supply pad 104, respectively. In 100, two power supply terminals 108 and 109 are provided, and one ground terminal 110 is provided.

【0020】図4(ボンディング接続の更にその他の例)
では、ボンディング接続可能な端子リ−ド108は電源パ
ッド104に、同端子リ−ド107は接地パッド106にそれぞ
れ接続されており、半導体集積回路100における電源端
子は108,109の2本、接地端子は110,107の2本となっ
ている。
FIG. 4 (still another example of bonding connection)
The terminal lead 108 capable of bonding connection is connected to the power supply pad 104, and the terminal lead 107 is connected to the ground pad 106. The two power supply terminals 108 and 109 in the semiconductor integrated circuit 100 are grounded. There are two terminals 110 and 107.

【0021】以上のように、本実施例1では、電源パッ
ドと機能パッド、または、接地パッドと機能パッドを
“対”で有することにより、半導体集積回路100におけ
る電源端子と接地端子の数をボンディング切り換えによ
り可変とすることができる(前掲の図1〜図4参照)。ま
た、本実施例1では、1つの半導体集積回路で、電源/
接地端子の数の異なる4種類のチップを構成することが
できる。この4種類のチップにより対ノイズ特性の評価
や電気的特性の評価を行った後、最適な電源端子と接地
端子の数を決定することができるという利点を有する。
As described above, in the first embodiment, the number of the power supply terminals and the number of the ground terminals in the semiconductor integrated circuit 100 are bonded by providing the power supply pad and the function pad or the ground pad and the function pad in “pair”. It can be made variable by switching (see FIGS. 1 to 4 described above). Further, in the first embodiment, the power supply /
Four types of chips having different numbers of ground terminals can be configured. After the evaluation of the noise characteristics and the evaluation of the electrical characteristics are performed using these four types of chips, there is an advantage that the optimal number of power supply terminals and ground terminals can be determined.

【0022】さらに、本実施例1では、端子リ−ド107
と108が機能端子となるか、電源/接地端子となるかは
評価後まで確定できないが、本機能端子をポ−ト機能の
ように製品仕様から削除しても、比較的大きな影響を与
えない端子に割り当てることで、回避できる。また、切
り換えにより、機能端子として使用しなくなった機能パ
ッドからの入力は、プルアップ/プルダウン抵抗により
インアクティブレベルに固定する。
Furthermore, in the first embodiment, the terminal leads 107
Although it cannot be determined until after the evaluation whether the terminals 108 and 108 will be functional terminals or power / ground terminals, even if this functional terminal is removed from the product specifications as a port function, it will not have a relatively large effect. This can be avoided by assigning it to a terminal. The input from the function pad that is no longer used as a function terminal due to the switching is fixed to an inactive level by a pull-up / pull-down resistor.

【0023】(実施例2)図5は、従来の半導体集積回
路を示すブロック図であって、本発明の第2の実施例
(実施例2)を説明するための参考図であり、図6は、本
発明の第2の実施例(実施例2)を説明する半導体集積回
路のブロック図である。図5,図6において、201は集
積回路内部,202はデッドスペ−ス(図5),203は電源/
接地パッド群(図6)をそれぞれ示す。
(Embodiment 2) FIG. 5 is a block diagram showing a conventional semiconductor integrated circuit according to a second embodiment of the present invention.
FIG. 6 is a reference diagram for explaining (Embodiment 2), and FIG. 6 is a block diagram of a semiconductor integrated circuit for explaining a second embodiment (Embodiment 2) of the present invention. 5 and 6, 201 denotes the inside of the integrated circuit, 202 denotes the dead space (FIG. 5), and 203 denotes the power supply /
Each of the ground pad groups (FIG. 6) is shown.

【0024】本発明に係る半導体集積回路では、ボンデ
ィング切り換えができるように、チップの端子数より多
いパッドを配置する必要がある。そのため、図5(従来
の半導体集積回路を示すブロック図)にみられるよう
に、集積回路内部201の外側に余分な空間であるデッド
スペ−ス202が生じる可能性がある。
In the semiconductor integrated circuit according to the present invention, it is necessary to arrange more pads than the number of terminals of the chip so that the bonding can be switched. Therefore, as shown in FIG. 5 (a block diagram showing a conventional semiconductor integrated circuit), there is a possibility that a dead space 202 which is an extra space outside the integrated circuit 201 is generated.

【0025】本実施例2では、このようなデッドスペ−
ス202(パッドネック)を解消するため、図6に示すよう
に、ボンディング切り換え用の電源/接地パッド群203
を機能パッドの外側に千鳥状に配置するようにしたもの
であり、これにより、余分な空間を排除し、チップサイ
ズを最小化することができる利点を有する。
In the second embodiment, such a dead space
As shown in FIG. 6, a power supply / ground pad group 203 for bonding switching is used to eliminate the pad 202 (pad neck).
Are arranged in a staggered manner outside the functional pad, which has the advantage that extra space can be eliminated and the chip size can be minimized.

【0026】[0026]

【発明の効果】本発明に係る半導体集積回路は、以上詳
記したとおり、予め機能パッドと“対”に電源パッドも
しくは接地パッドを有する構造としたことによって、ボ
ンディング切り換えにより機能端子を電源端子もしくは
接地端子に変更でき、対ノイズ特性や電気的特性を改善
することができるという効果が生じる。
As described in detail above, the semiconductor integrated circuit according to the present invention has a structure in which a power supply pad or a ground pad is provided in advance as a "pair" with a function pad. This can be changed to a ground terminal, and the effect of improving noise elimination characteristics and electrical characteristics can be obtained.

【0027】従来の半導体集積回路においては、電源端
子や接地端子を増やそうとすると、レイアウト変更を行
ってから拡散を行う必要があったため、3〜6ヶ月近く
かかることになるが、本発明に係る半導体集積回路によ
れば、ボンディング切り換えのみによって数時間で変更
可能となる。
In the conventional semiconductor integrated circuit, it takes about 3 to 6 months to increase the number of power supply terminals and ground terminals because it is necessary to perform diffusion after changing the layout. According to the semiconductor integrated circuit, it can be changed in several hours only by switching the bonding.

【0028】また、特に、対ノイズ特性は、実装する基
板によって大きく異なってくるため、カスタム品のよう
な特定ユ−ザ向けの集積回路の場合には、数種類の電源
/接地端子数の異なるチップにより実装評価を行った
後、そのユ−ザに最適な電源/接地端子数を決定するこ
とができるため、端子を最大限有効に活用することが可
能となるという効果が生じる。
In particular, since the noise immunity characteristic greatly differs depending on the board to be mounted, in the case of an integrated circuit for a specific user such as a custom product, several types of chips having different numbers of power supply / ground terminals are required. After performing the mounting evaluation, the number of power supply / ground terminals optimal for the user can be determined, so that the terminal can be used most effectively.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施例(実施例1)の「ボンディ
ング接続の一例」を示す半導体集積回路のブロックおよ
び接続図である。
FIG. 1 is a block diagram and a connection diagram of a semiconductor integrated circuit showing “an example of bonding connection” according to a first embodiment (embodiment 1) of the present invention.

【図2】本発明の第1の実施例(実施例1)の「ボンディ
ング接続の他の例」を示す半導体集積回路のブロックお
よび接続図である。
FIG. 2 is a block diagram and a connection diagram of a semiconductor integrated circuit showing “another example of bonding connection” according to the first embodiment (embodiment 1) of the present invention.

【図3】本発明の第1の実施例(実施例1)の「ボンディ
ング接続のその他の例」を示す半導体集積回路のブロッ
クおよび接続図である。
FIG. 3 is a block diagram and a connection diagram of a semiconductor integrated circuit showing “another example of bonding connection” in the first embodiment (Embodiment 1) of the present invention.

【図4】本発明の第1の実施例(実施例1)の「ボンディ
ング接続の更にその他の例」を示す半導体集積回路のブ
ロックおよび接続図である。
FIG. 4 is a block diagram and a connection diagram of a semiconductor integrated circuit showing “still another example of bonding connection” in the first embodiment (Embodiment 1) of the present invention.

【図5】従来の半導体集積回路を示すブロック図であっ
て、本発明の第2の実施例(実施例2)を説明するための
参考図である。
FIG. 5 is a block diagram showing a conventional semiconductor integrated circuit, and is a reference diagram for explaining a second embodiment (Embodiment 2) of the present invention.

【図6】本発明の第2の実施例(実施例2)を説明する半
導体集積回路のブロック図である。
FIG. 6 is a block diagram of a semiconductor integrated circuit illustrating a second embodiment (Embodiment 2) of the present invention.

【図7】従来の半導体集積回路の1例を示すブロック図
である。
FIG. 7 is a block diagram showing an example of a conventional semiconductor integrated circuit.

【図8】従来の半導体集積回路の他の例を示すブロック
図である。
FIG. 8 is a block diagram showing another example of a conventional semiconductor integrated circuit.

【符号の説明】[Explanation of symbols]

100 半導体集積回路 101,102 機能パッド 103,104 電源パッド 105,106 接地パッド 107〜110 端子リ−ド 201 集積回路内部 202 デッドスペ−ス 203 電源/接地パッド群 301〜304 電源端子 305 外周部 306 CPU部 307 デジタル部 308 アナログ部 REFERENCE SIGNS LIST 100 semiconductor integrated circuit 101, 102 function pad 103, 104 power pad 105, 106 ground pad 107-110 terminal lead 201 inside integrated circuit 202 dead space 203 power / ground pad group 301-304 power terminal 305 outer peripheral portion 306 CPU Section 307 Digital section 308 Analog section

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 電源印加用の電源パッド、接地電位用の
接地パッド、機能信号の入出力を行う機能パッドを有す
る半導体集積回路において、機能パッドと電源パッド、
または、機能パッドと接地パッドを“対”で有し、ボン
ディング切り替えにより特定の端子を、電源端子と機能
端子、または、接地端子と機能端子に切り替えることが
できる構成からなることを特徴とする半導体集積回路。
1. A semiconductor integrated circuit having a power supply pad for applying power, a ground pad for ground potential, and a function pad for inputting / outputting a function signal.
Alternatively, a semiconductor having a configuration in which a functional pad and a ground pad are provided in a “pair” and a specific terminal can be switched between a power supply terminal and a functional terminal or a ground terminal and a functional terminal by bonding switching. Integrated circuit.
【請求項2】 請求項1記載の半導体集積回路におい
て、ボンディング切り換え用の電源パッド/接地パッド
群を機能パッドの外側に千鳥状に配置することを特徴と
する半導体集積回路。
2. The semiconductor integrated circuit according to claim 1, wherein a power supply pad / grounding pad group for bonding switching is arranged in a staggered manner outside the function pad.
JP8217034A 1996-08-19 1996-08-19 Semiconductor integrated circuit Pending JPH1065103A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8217034A JPH1065103A (en) 1996-08-19 1996-08-19 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8217034A JPH1065103A (en) 1996-08-19 1996-08-19 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH1065103A true JPH1065103A (en) 1998-03-06

Family

ID=16697809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8217034A Pending JPH1065103A (en) 1996-08-19 1996-08-19 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH1065103A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006011292A1 (en) * 2004-07-28 2006-02-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device
JP2009158561A (en) * 2007-12-25 2009-07-16 Renesas Technology Corp Semiconductor device
JP2012028701A (en) * 2010-07-27 2012-02-09 Toshiba Corp Optical module
JP2016025199A (en) * 2014-07-18 2016-02-08 セイコーエプソン株式会社 Circuit device, electronic apparatus and mobile

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006011292A1 (en) * 2004-07-28 2006-02-02 Matsushita Electric Industrial Co., Ltd. Semiconductor device
JPWO2006011292A1 (en) * 2004-07-28 2008-05-01 松下電器産業株式会社 Semiconductor device
US8035188B2 (en) 2004-07-28 2011-10-11 Panasonic Corporation Semiconductor device
JP2009158561A (en) * 2007-12-25 2009-07-16 Renesas Technology Corp Semiconductor device
JP2012028701A (en) * 2010-07-27 2012-02-09 Toshiba Corp Optical module
JP2016025199A (en) * 2014-07-18 2016-02-08 セイコーエプソン株式会社 Circuit device, electronic apparatus and mobile

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