JPH0212027B2 - - Google Patents

Info

Publication number
JPH0212027B2
JPH0212027B2 JP58122901A JP12290183A JPH0212027B2 JP H0212027 B2 JPH0212027 B2 JP H0212027B2 JP 58122901 A JP58122901 A JP 58122901A JP 12290183 A JP12290183 A JP 12290183A JP H0212027 B2 JPH0212027 B2 JP H0212027B2
Authority
JP
Japan
Prior art keywords
circuit
terminal
output
terminals
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58122901A
Other languages
Japanese (ja)
Other versions
JPS6014460A (en
Inventor
Hiroshi Shinohara
Kenji Anami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58122901A priority Critical patent/JPS6014460A/en
Publication of JPS6014460A publication Critical patent/JPS6014460A/en
Publication of JPH0212027B2 publication Critical patent/JPH0212027B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Description

【発明の詳細な説明】 この発明は、接地電圧または電源電圧の与え方
により雑音の低減化を図つた半導体集積回路に関
するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor integrated circuit in which noise is reduced by applying a ground voltage or a power supply voltage.

従来の半導体集積回路を、2入力論理和ゲート
を集積化したものを例に取つて第1図により説明
する。第1図において、1は2入力論理和ゲート
を集積化した半導体集積回路チツプ(以下単にチ
ツプという)、2〜5は前記チツプ1と外部回路
(図示せず)を接続する入出力端子で、2は電源
端子、3は接地端子、4a,4bは入力端子、5
は出力端子である。6は入力保護回路、7は内部
回路、8は出力回路、9は入力保護抵抗体、10
は入力保護トランジスタ、11a,11bは出力
トランジスタであ。
A conventional semiconductor integrated circuit will be explained with reference to FIG. 1, taking as an example a circuit in which two-input OR gates are integrated. In FIG. 1, 1 is a semiconductor integrated circuit chip (hereinafter simply referred to as a chip) that integrates a two-input OR gate, and 2 to 5 are input/output terminals that connect the chip 1 to an external circuit (not shown). 2 is a power terminal, 3 is a ground terminal, 4a, 4b are input terminals, 5
is the output terminal. 6 is an input protection circuit, 7 is an internal circuit, 8 is an output circuit, 9 is an input protection resistor, 10
is an input protection transistor, and 11a and 11b are output transistors.

次に動作について説明する。 Next, the operation will be explained.

入力端子4a,4bに接地電圧と電源電圧の範
囲内の正常な電圧が印加された場合、入力保護ト
ランジスタ10はオフしたままなので入力電圧は
そのまま内部回路7に伝達し、そのレベルに応じ
た論理出力が内部回路7から出力回路8に印加さ
れ、出力トランジスタ11aと11bの一方がオ
ンして出力端子5をとおして外部回路を充電また
は放電する。また、入力端子4a,4bに接地電
圧と電源電圧の範囲外の異常な電圧が偶発的に印
加された場合、入力保護トランジスタ10がオン
するので、入力電圧は入力保護トランジスタ10
と入力保護抵抗体9で抵抗分割されるため、内部
回路7は過電圧の印加から保護される。
When a normal voltage within the range of ground voltage and power supply voltage is applied to the input terminals 4a and 4b, the input protection transistor 10 remains off, so the input voltage is transmitted as is to the internal circuit 7, and the logic according to the level is applied. An output is applied from the internal circuit 7 to the output circuit 8, and one of the output transistors 11a and 11b is turned on to charge or discharge the external circuit through the output terminal 5. Furthermore, if an abnormal voltage outside the range of the ground voltage and power supply voltage is accidentally applied to the input terminals 4a and 4b, the input protection transistor 10 is turned on, so that the input voltage is
The internal circuit 7 is protected from the application of overvoltage because it is resistance-divided by the input protection resistor 9 and the input protection resistor 9.

しかし、この場合、過電流が入力保護抵抗体
9、入力保護トランジスタをとおして接地端子3
に流れるために、接地端子3およびチツプ1内の
接地配線に雑音が生じる。さらに、出力端子5に
も出力信号の反射波等の原因による過電圧が印加
されることがあり、この場合にも過電流が出力ト
ランジスタ11a,11bをとおして電源端子
2、また接地端子3に流れるため、電源端子2、
接地端子3および電源配線、接地配線に雑音が生
じる。これらの配線は内部回路7にも接続されて
いるので、上記の各端子による雑音は入力保護回
路6、出力回路8のみならず内部回路7にも伝達
し、誤動作やラツチアツプの一因となる。
However, in this case, overcurrent flows through the input protection resistor 9 and the input protection transistor to the ground terminal 3.
Because of this, noise is generated in the ground terminal 3 and the ground wiring inside the chip 1. Furthermore, an overvoltage may be applied to the output terminal 5 due to a reflected wave of the output signal, etc., and in this case too, an overcurrent flows through the output transistors 11a and 11b to the power supply terminal 2 and the ground terminal 3. Therefore, power terminal 2,
Noise occurs in the ground terminal 3, power supply wiring, and ground wiring. Since these wirings are also connected to the internal circuit 7, noise from each of the terminals mentioned above is transmitted not only to the input protection circuit 6 and the output circuit 8 but also to the internal circuit 7, causing malfunctions and latch-up.

従来の半導体集積回路は以上のように、内部回
路7に入力保護回路6および出力回路8と同一系
統の電源配線、接地配線が接続されているので、
入出力端子に印加された過電圧に基づく雑音が電
源配線、接地配線をとおして内部回路7等に伝達
されるという欠点があつた。
As described above, in the conventional semiconductor integrated circuit, the internal circuit 7 is connected to the power supply wiring and ground wiring of the same system as the input protection circuit 6 and the output circuit 8.
There is a drawback that noise due to overvoltage applied to the input/output terminals is transmitted to the internal circuit 7 and the like through the power supply wiring and the ground wiring.

この発明は、上記のような従来のものの欠点を
除去するためになされたもので、電源端子および
接地端子の少なくとも一方を複数個設けて、内部
回路に接続される電源配線、接地配線を入力保護
回路および出力回路に接続されるそれらと別系統
にすることにより、内部回路を入出力端子に印加
された過電圧に基づく雑音から隔離することを目
的としている。以下この発明の一実施例を図面に
ついて説明する。
This invention was made in order to eliminate the drawbacks of the conventional ones as described above, and provides input protection for the power supply wiring and the ground wiring connected to the internal circuit by providing a plurality of at least one of a power supply terminal and a plurality of ground terminals. By providing a separate system from those connected to the circuit and output circuit, the purpose is to isolate the internal circuit from noise caused by overvoltage applied to the input/output terminals. An embodiment of the present invention will be described below with reference to the drawings.

第2図はこの発明の一実施例を示す構成図で、
2a,2bは電源端子、3a,3bは接地端子で
あり、電源端子2aと接地端子3aは入力保護回
路6および出力回路8の専用であり、電源端子2
bと接地端子3bは内部回路7の専用として設け
られたものである。
FIG. 2 is a configuration diagram showing an embodiment of this invention.
2a and 2b are power terminals, 3a and 3b are ground terminals, and the power terminal 2a and the ground terminal 3a are dedicated to the input protection circuit 6 and the output circuit 8;
b and the ground terminal 3b are provided exclusively for the internal circuit 7.

第3図にはチツプ1をセラミツクパツケージ等
の容量12に取り付けたところを示す平面図で、
13〜16は前記容量12内に設けられた外部端
子で、13は電源端子、14は接地端子、15
a,15bは入力端子、16は出力端子である。
チツプ1内の各端子2〜5と外部端子である各端
子13〜16は金属ワイヤ17をとおして接続さ
れている。特に、チツプ1内の電源端子2a,2
bと接地端子3a,3bは1つの外部端子13ま
たは14に接続されている。したがつて、必要な
外部端子数は従来の場合と同じである。なお、半
導体集積回路基板が電源または接地と同電位の場
合、前記基板をとおして電源端子2a,2bまた
は接地端子3a,3bが接続されることになる
が、金属配線に比べて基板のインピーダンスは大
きい。
FIG. 3 is a plan view showing the chip 1 attached to a capacitor 12 such as a ceramic package.
13 to 16 are external terminals provided in the capacitor 12, 13 is a power supply terminal, 14 is a ground terminal, and 15
a and 15b are input terminals, and 16 is an output terminal.
Each of the terminals 2 to 5 inside the chip 1 and each of the external terminals 13 to 16 are connected through a metal wire 17. In particular, the power terminals 2a, 2 in the chip 1
b and the ground terminals 3a, 3b are connected to one external terminal 13 or 14. Therefore, the number of required external terminals is the same as in the conventional case. Note that when the semiconductor integrated circuit board is at the same potential as the power supply or ground, the power supply terminals 2a, 2b or the ground terminals 3a, 3b are connected through the board, but the impedance of the board is lower than that of metal wiring. big.

入力端子4a,4bおよび出力端子5に過電圧
が印加された場合、従来の場合と同様に入力保護
回路6と出力回路8に接続される電源端子2a,
接地端子3aに雑音が生じる。この雑音は外部電
源端子13、外部接地端子14を介してチツプ1
内部の電源端子2b、接地端子3b、さらに内部
回路7へと伝達される。しかし、金属ワイヤ17
の有するインピーダンスのために雑音は減衰して
伝達される。しかも、外部電源端子13、外部接
地端子14は低インピーダンスで電源に接続され
ており、外部電源端子13、外部接地端子14間
には一般にデカツプル容量が並列接続されている
ので、内部回路7における電源電圧雑音、接地電
圧雑音は微少である。
When overvoltage is applied to the input terminals 4a, 4b and the output terminal 5, the power supply terminals 2a, 2a, which are connected to the input protection circuit 6 and the output circuit 8, as in the conventional case.
Noise is generated at the ground terminal 3a. This noise is transmitted to the chip 1 via the external power supply terminal 13 and the external ground terminal 14.
The signal is transmitted to the internal power supply terminal 2b, the ground terminal 3b, and further to the internal circuit 7. However, metal wire 17
Noise is attenuated and transmitted due to the impedance of the Moreover, the external power supply terminal 13 and the external ground terminal 14 are connected to the power supply at low impedance, and since a decoupled capacitor is generally connected in parallel between the external power supply terminal 13 and the external ground terminal 14, the power supply in the internal circuit 7 is Voltage noise and ground voltage noise are minimal.

なお、上記実施例では、入力保護回路6および
出力回路8の群と内部回路7の群の2群に排他的
に分割したものを示したが、雑音に敏感な一部の
内部回路7の群に入力保護回路6、出力回路8が
含まれないような分割方法であれば、雑音に鈍感
な一部の内部回路7が入力保護回路6および出力
回路8に含まれても、あるいは3群以上に分割し
ても、上記実施例と同様の効果を奏する。
In the above embodiment, the input protection circuit 6 and the output circuit 8 are divided into two groups, and the internal circuit 7 is divided into two groups. If the division method is such that the input protection circuit 6 and the output circuit 8 are not included in the input protection circuit 6 and the output circuit 8, even if some internal circuits 7 that are insensitive to noise are included in the input protection circuit 6 and the output circuit 8, or three or more groups Even if it is divided into two parts, the same effect as in the above embodiment can be obtained.

また、電源端子2a,2bと接地端子3a,3
bの両方を2個ずつ設けたものを示したが、どち
らか一方のみの端子を複数個設けて、他方は1個
に共通化したものでもよい。
In addition, power terminals 2a, 2b and ground terminals 3a, 3
Although a configuration in which two terminals of both terminals b are provided is shown, a plurality of terminals of only one terminal may be provided, and the other terminal may be made common to one terminal.

また、上記実施例では、内部回路7として2入
力論理和ゲートのものを示したが、ランダムロジ
ツクでもメモリでも何でもよく、いかなる内部回
路7の場合にも適用できることはいうまでもな
い。
Further, in the above embodiment, a two-input OR gate is shown as the internal circuit 7, but it goes without saying that it can be applied to any type of internal circuit 7, such as random logic or memory.

以上説明したように、この発明によれば、半導
体集積回路の内部回路の電源端子および接地端子
を入力保護回路および出力回路のそれらと別に設
けたので、入出力雑音に対して動作の安定したも
のが得られる効果がある。
As explained above, according to the present invention, the power supply terminal and the ground terminal of the internal circuit of the semiconductor integrated circuit are provided separately from those of the input protection circuit and the output circuit, so that operation is stable against input/output noise. There is an effect that can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来の半導体集積回路を示す図、第2
図はこの発明の一実施例による半導体集積回路を
示す図、第3図はこの発明の一実施例による半導
体集積回路を容量に取り付けたところを示す平面
図である。 図中、1は半導体集積回路チツプ、2a,2b
は電源端子、3a,3bは接地端子、4a,4b
は入力端子、5は出力端子、6は入力保護回路、
7は内部回路、8は出力回路、9は入力保護抵抗
体、10は入力保護トランジスタ、11a,11
bは出力トランジスタ、12は容量、13は外部
電源端子、14は外部接地端子、15a,15b
は外部入力端子、16は外部出力端子、17は金
属ワイヤである。
Figure 1 shows a conventional semiconductor integrated circuit; Figure 2 shows a conventional semiconductor integrated circuit;
The figure shows a semiconductor integrated circuit according to an embodiment of the invention, and FIG. 3 is a plan view showing the semiconductor integrated circuit according to an embodiment of the invention attached to a capacitor. In the figure, 1 is a semiconductor integrated circuit chip, 2a, 2b
is the power terminal, 3a, 3b is the ground terminal, 4a, 4b
is an input terminal, 5 is an output terminal, 6 is an input protection circuit,
7 is an internal circuit, 8 is an output circuit, 9 is an input protection resistor, 10 is an input protection transistor, 11a, 11
b is an output transistor, 12 is a capacitor, 13 is an external power supply terminal, 14 is an external ground terminal, 15a, 15b
16 is an external input terminal, 16 is an external output terminal, and 17 is a metal wire.

Claims (1)

【特許請求の範囲】[Claims] 1 電源端子、接地端子、入出力端子、内部回
路、入力保護回路および出力回路を同一の基板上
に形成してなる半導体集積回路において、前記電
源端子、前記接地端子の少なくとも一方を複数個
備え、前記複数個備えた電源端子または接地端子
を前記内部回路用と前記入力保護回路用または前
記内部回路用と前記出力回路用で別個のものを用
いて金属配線でそれぞれ前記内部回路と前記入力
保護回路または前記内部回路と前記出力回路とを
接続したことを特徴とする半導体集積回路。
1. A semiconductor integrated circuit in which a power supply terminal, a ground terminal, an input/output terminal, an internal circuit, an input protection circuit, and an output circuit are formed on the same substrate, including a plurality of at least one of the power supply terminal and the ground terminal, The plurality of power supply terminals or ground terminals are separately provided for the internal circuit and the input protection circuit, or for the internal circuit and the output circuit, respectively, using metal wiring for the internal circuit and the input protection circuit, respectively. Alternatively, a semiconductor integrated circuit characterized in that the internal circuit and the output circuit are connected.
JP58122901A 1983-07-04 1983-07-04 Semiconductor integrated circuit Granted JPS6014460A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58122901A JPS6014460A (en) 1983-07-04 1983-07-04 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58122901A JPS6014460A (en) 1983-07-04 1983-07-04 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS6014460A JPS6014460A (en) 1985-01-25
JPH0212027B2 true JPH0212027B2 (en) 1990-03-16

Family

ID=14847418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58122901A Granted JPS6014460A (en) 1983-07-04 1983-07-04 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6014460A (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61283152A (en) * 1985-06-07 1986-12-13 Nec Corp Semiconductor device
JPH06105740B2 (en) * 1987-05-27 1994-12-21 日本電気株式会社 Integrated circuit device
US4979016A (en) * 1988-05-16 1990-12-18 Dallas Semiconductor Corporation Split lead package
JPH0228362A (en) * 1988-06-10 1990-01-30 Nec Ic Microcomput Syst Ltd Semiconductor integrated circuit device
JPH02150105A (en) * 1988-12-01 1990-06-08 Matsushita Electric Ind Co Ltd Differential amplifier circuit device
JP3011510B2 (en) * 1990-12-20 2000-02-21 株式会社東芝 Semiconductor device having interconnected circuit board and method of manufacturing the same
JP3607262B2 (en) 2002-05-28 2005-01-05 沖電気工業株式会社 Electrostatic breakdown protection circuit for semiconductor devices
JP2012009717A (en) * 2010-06-26 2012-01-12 Zycube:Kk Semiconductor chip and semiconductor module mounting it
JP6266444B2 (en) 2014-06-20 2018-01-24 ザインエレクトロニクス株式会社 Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423387A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Semiconductor integrated-circuit device
JPS5828852A (en) * 1981-08-13 1983-02-19 Fujitsu Ltd Large scale integrated circuit
JPS5879743A (en) * 1981-11-05 1983-05-13 Nec Corp Monolithic integrated circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5868043U (en) * 1981-11-02 1983-05-09 日産自動車株式会社 Input protection device for semiconductor devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423387A (en) * 1977-07-22 1979-02-21 Hitachi Ltd Semiconductor integrated-circuit device
JPS5828852A (en) * 1981-08-13 1983-02-19 Fujitsu Ltd Large scale integrated circuit
JPS5879743A (en) * 1981-11-05 1983-05-13 Nec Corp Monolithic integrated circuit

Also Published As

Publication number Publication date
JPS6014460A (en) 1985-01-25

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