JPH03270067A - Semiconductor integrated device - Google Patents

Semiconductor integrated device

Info

Publication number
JPH03270067A
JPH03270067A JP2069142A JP6914290A JPH03270067A JP H03270067 A JPH03270067 A JP H03270067A JP 2069142 A JP2069142 A JP 2069142A JP 6914290 A JP6914290 A JP 6914290A JP H03270067 A JPH03270067 A JP H03270067A
Authority
JP
Japan
Prior art keywords
power supply
pads
supply pads
internal circuit
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2069142A
Other languages
Japanese (ja)
Inventor
Nobuo Nomura
野村 宣生
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu VLSI Ltd
Fujitsu Ltd
Original Assignee
Fujitsu VLSI Ltd
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu VLSI Ltd, Fujitsu Ltd filed Critical Fujitsu VLSI Ltd
Priority to JP2069142A priority Critical patent/JPH03270067A/en
Publication of JPH03270067A publication Critical patent/JPH03270067A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To avoid electrostatic breakdown while considering various noise countermeasures by forming power supply pads exclusive for each of a plurality of internal circuits formed onto a chip and mounting resistance elements mutually connecting the power supply pads. CONSTITUTION:Both power supply pads 26, 27 and both grounding pads 28, 29 are connected by resistance elements 46, 47 respectively. Since a section between power terminals 21, 22 (between the power supply pads 26, 27) is connected by the resistance element 46, discharge currents mainly flow through the resistance element 46, thus reducing currents to an internal circuit bonded with the power supply pads 26, 27, then avoiding the electrostatic breakdown of the internal circuit. When a package 20 is incorporated into an equipment, supply currents can be fed at every internal circuit without being subjected to the effect of the resistance element 46 because the power terminals 21, 22 and an external power supply are connected by low impedance, and various noise countermeasures can be executed without trouble. Since the floating capacitance C46, C47 of the resistance elements 46, 47 works as bypass capacitors in addition to the execution of said countermeasures, various noises can further be suppressed.

Description

【発明の詳細な説明】 〔概要〕 多電源方式を採用する半導体集積装置に関し、諸雑音対
策を図りつつ静電破壊を回避することを目的とし、 チップ上に形成した複数の内部回路ごとの専用電源パッ
トを有する半導体集積装置において、前記電源パット同
士を接続する抵抗素子を備えたこ〔産業上の利用分野〕 本発明は、半導体集積装置、特に、多電源方式を採用す
る半導体集積装置に関する。
[Detailed Description of the Invention] [Summary] With regard to a semiconductor integrated device that employs a multi-power supply system, the purpose of this invention is to avoid electrostatic damage while taking measures against various noises, and to provide a dedicated circuit for each of a plurality of internal circuits formed on a chip. The present invention relates to a semiconductor integrated device having power supply pads, including a resistive element for connecting the power supply pads.[Field of Industrial Application] The present invention relates to a semiconductor integrated device, and particularly to a semiconductor integrated device employing a multi-power supply system.

近年、半導体集積装置はその動作速度を一段と向上する
傾向にあるが、これに伴って入出力信号に対する諸雑音
対策、例えば同時スイッチング雑音やリンギング雑音あ
るいはグリッジ雑音などの対策が以前にも増して重要に
なってきた。
In recent years, the operating speed of semiconductor integrated devices has tended to increase further, but this has made it more important than ever to take measures against various noises in input/output signals, such as simultaneous switching noise, ringing noise, and glitch noise. It has become.

例えば、同時スイッチング雑音(グランドバウンスとも
よばれる)は、複数の出力回路が同時に動作したときに
基準電位が変動(電源電位の下降あるいは接地電位の上
昇)することにより発生する雑音で、電位変動が次段の
閾(しきい)値を越えた場合に誤動作の原因となる。
For example, simultaneous switching noise (also called ground bounce) is the noise that occurs when the reference potential fluctuates (the power supply potential drops or the ground potential rises) when multiple output circuits operate simultaneously. If the threshold value of the stage is exceeded, it may cause malfunction.

ここで、電位の変動量はパンケージのリードやボンディ
ングワイヤのインダクタンス、これらの抵抗計および電
流変化の速度(di/dt)によって決まる。このため
、半導体集積装置の動作速度が高いほどdi/dtが大
きくなるから、次段の闇値を越えるような大きなスイッ
チング雑音が発生する度合いが高くなり、動作上の不都
合を生ずる。
Here, the amount of change in potential is determined by the inductance of the lead of the pan cage and the bonding wire, their resistance meter, and the speed of current change (di/dt). For this reason, the higher the operating speed of the semiconductor integrated device is, the larger the di/dt becomes, which increases the degree to which large switching noise that exceeds the darkness value of the next stage is generated, resulting in operational inconveniences.

〔従来の技術〕[Conventional technology]

かかる諸雑音対策のひとつとして多電源方式が知られて
いる。この方式は、チップ上に形成した各内部回路ごと
に専用の電源端子/接地端子を設けるもので、電源電流
/接地電流を内部回路ごとに複数の流路で流すことによ
り、ボンディングワイヤやリードのインダクタンスおよ
び抵抗骨によって生じる雑音の大きさを微小に抑えるよ
うにしたものである。
A multi-power supply system is known as one of such noise countermeasures. In this method, a dedicated power supply terminal/ground terminal is provided for each internal circuit formed on the chip, and by flowing power supply current/ground current through multiple channels for each internal circuit, bonding wires and leads can be connected. This is designed to minimize the amount of noise generated by inductance and resistance bones.

〔発明が解決しようとする課題] しかしながら、かかる従来のものにあっては、各内部回
路ごとの電源端子/接地端子が相互に絶縁されていたた
め、チップ(あるいはパンケージ)を素手でされった場
合等に内部回路が静電破壊されるといった問題点があっ
た。
[Problems to be Solved by the Invention] However, in such conventional devices, the power terminals/ground terminals of each internal circuit are insulated from each other, so if the chip (or pancage) is touched with bare hands, There were problems such as electrostatic damage to internal circuits.

すなわち、第7図において、例えばパンケージの電源端
子(あるいは接地端子)Aをグランドに接続した状態で
他の電源端子(あるいは接地端子)Bを素手でされると
、両端子A−Bの間が絶縁状態なので放電電流iは端子
Bから内部回路Ca、cbを通って端子Aからグランド
へと流れ、この結果、内部回路Ca、、Cbが放電電流
iによって破壊されてしまう。
That is, in Fig. 7, for example, if the power supply terminal (or ground terminal) A of the pan cage is connected to the ground and the other power supply terminal (or ground terminal) B is touched with bare hands, the distance between both terminals A and B will be Since it is in an insulated state, the discharge current i flows from the terminal B through the internal circuits Ca and cb and from the terminal A to the ground, and as a result, the internal circuits Ca, Cb are destroyed by the discharge current i.

本発明は、このような問題点に鑑みてなされたもので、
諸雑音対策を図りつつ静電破壊を回避することを目的と
している。
The present invention was made in view of these problems, and
The purpose is to avoid electrostatic damage while taking various noise countermeasures.

〔課題を解決するための手段〕[Means to solve the problem]

第1図は本発明の原理構成図である。この図において、
lOはチップ、11a−11nはチップ上に形成した複
数の内部回路、12a〜12nは該複数の内部回路11
a−1inごとの専用電源パット(接地パント)であり
、抵抗素子13a〜13mによってこれらの専用電源パ
ット123〜12n同士を接続して構成する。
FIG. 1 is a diagram showing the principle configuration of the present invention. In this diagram,
1O is a chip, 11a to 11n are a plurality of internal circuits formed on the chip, and 12a to 12n are the plurality of internal circuits 11.
This is a dedicated power supply pad (ground punt) for each a-1 inch, and is constructed by connecting these dedicated power supply pads 123 to 12n with each other using resistive elements 13a to 13m.

ここで、上記チップの意味にはパンケージも含まれる。Here, the meaning of the above-mentioned chip also includes a pancake.

パッケージと解釈した場合には上記の電源パッドを電源
端子(接地端子)と読み替える。
When interpreted as a package, the above power supply pad should be read as a power supply terminal (ground terminal).

すなわち、各抵抗素子13a〜13mによって複数の内
部回路118〜llnごとの電源端子同士を接続する。
That is, the power supply terminals of each of the plurality of internal circuits 118 to lln are connected to each other by each of the resistive elements 13a to 13m.

〔作用〕[Effect]

本発明では、例えばひとつの電源パットから他の電源パ
ットへと流れる静電気が、主にこれらの電源パット間を
接続する抵抗素子を介して流される。したがって、内部
回路へと向かう電流が少なくなり、その結果、内部回路
の静電破壊が回避される。
In the present invention, static electricity flowing from one power supply pad to another power supply pad, for example, is mainly caused to flow through the resistance element that connects these power supply pads. Therefore, the amount of current flowing to the internal circuit is reduced, and as a result, electrostatic damage to the internal circuit is avoided.

また、当該チップを機器等に組み込んで使用する際には
電源パットと外部電源との間が低インピーダンスで接続
されるから、複数の内部回路ごとの電源電流は各電源パ
ットと外部電源との間で支障なく流され、諸雑音対策上
の不都合は生しない。
In addition, when the chip is incorporated into equipment and used, the power supply pad and external power supply are connected with low impedance, so the power supply current for each of the multiple internal circuits is reduced between each power supply pad and the external power supply. The signal can be streamed without any problem, and there will be no problems in terms of noise countermeasures.

〔実施例〕〔Example〕

以下、本発明を図面に基づいて説明する。 Hereinafter, the present invention will be explained based on the drawings.

第2〜6図は本発明に係る半導体集積装置の一実施例を
示す図である。
2 to 6 are diagrams showing an embodiment of a semiconductor integrated device according to the present invention.

まず、本実施例の概念構成を説明すると、第2図におい
て、20はI C(integrated circu
it)のパッケージであり、パッケージ20には二つの
電源端子21.22および二つの接地端子23.24が
設けられると共に、チップ25を搭載している。チップ
25上には図示を略しているが複数の内部回路が形成さ
れ、さらに各内部回路ごとの電源パット26.27およ
び接地バソI・28.29が形成されている。なお、3
0〜33は入出力信号端子、34〜37は入出力信号パ
ット、38〜45はボンディングワイヤである。
First, to explain the conceptual configuration of this embodiment, in FIG. 2, 20 is an IC (integrated circuit).
The package 20 is provided with two power terminals 21, 22 and two ground terminals 23, 24, and a chip 25 is mounted thereon. Although not shown, a plurality of internal circuits are formed on the chip 25, and power pads 26 and 27 and ground pads I and 28 and 29 are formed for each internal circuit. In addition, 3
0 to 33 are input/output signal terminals, 34 to 37 are input/output signal pads, and 38 to 45 are bonding wires.

ここでは、電源パント2ε、27同士および接地パット
28.29同士をそれぞれ抵抗素子46.47で接続す
る。第3図に抵抗素子46.47の好ましい例を示す。
Here, the power supply punts 2ε and 27 and the ground pads 28 and 29 are connected by resistive elements 46 and 47, respectively. FIG. 3 shows a preferred example of the resistive elements 46 and 47.

この図において、P、、P!は電源パント26および2
7(あるいは接地パット28および29)であり、p、
、p、の各々からアルミ配線り、、Ltを延長し、例え
ばポリシリコン(Poly−Si )や不純物拡散によ
って形成した抵抗素子46(あるいは47)に接続する
。このように形成した抵抗素子46゜47は所定の抵抗
値Rを有すると共に、基板(図示路)との間に浮遊容1
cを生ずる。第2図中のC4いC4?はこの浮遊容量C
を表している。
In this figure, P,,P! is power supply punt 26 and 2
7 (or ground pads 28 and 29), p,
, p are extended from aluminum wiring lines , Lt, and connected to a resistive element 46 (or 47) formed, for example, by polysilicon (Poly-Si) or impurity diffusion. The resistive elements 46 and 47 thus formed have a predetermined resistance value R, and have a floating capacitance of 1 between them and the substrate (the path shown in the figure).
gives rise to c. C4 in Figure 2? C4? is this stray capacitance C
represents.

以上の構成において、例えば一方の電源端子21をグラ
ンドに接続したままで他方の電源端子22に手を触れる
と、人体に蓄積された静電気によって他方の電源端子2
2(電源パット27)から一方の電源端子21 (電源
バント26)へと放電電流が流れるが、本実施例ではこ
れらの電源端子21.22間(電源パット26.27間
)を抵抗素子46によって接続したので、放電電流は主
として抵抗素子46を通して流れる結果、電源パット2
6.27に接続する図示しない内部回路への電流を少な
くでき、内部回路の静電破壊を回避できる。
In the above configuration, for example, if one power terminal 21 is connected to the ground and the other power terminal 22 is touched, static electricity accumulated in the human body will cause the other power terminal 22 to be touched.
2 (power supply pad 27) to one power supply terminal 21 (power supply bundt 26), but in this embodiment, a resistive element 46 connects these power supply terminals 21 and 22 (between power supply pads 26 and 27). Since the connection is made, the discharge current mainly flows through the resistor element 46, and as a result, the power supply pad 2
The current flowing to the internal circuit (not shown) connected to 6.27 can be reduced, and electrostatic damage to the internal circuit can be avoided.

また、パンケージ20を機器に組み込むと電a端子21
22と外部電源との間が低インピーダンスで接続される
から、抵抗素子46の影響を受けることなく各内部回路
ごとに電源電流を供給でき、同時スイッチング雑音など
の諸雑音対策を支障なく行うことができる。加えて、抵
抗素子46.47の浮遊容I C4b、C4’lがバイ
パスコンデンサとして作用するので諸雑音を一層抑制で
きる特有の効果がある。
In addition, when the pan cage 20 is assembled into a device, the electric terminal 21
22 and the external power supply are connected at low impedance, the power supply current can be supplied to each internal circuit without being affected by the resistive element 46, and various noise countermeasures such as simultaneous switching noise can be taken without any problems. can. In addition, the stray capacitances IC4b and C4'l of the resistive elements 46 and 47 act as bypass capacitors, which has the unique effect of further suppressing various noises.

言うまでもないが、抵抗素子46.47の抵抗値Rは種
々の条件を勘案して最適な値にする必要がある。例えば
、(1)パッケージ20を機器に組み込んだ場合の電源
インピーダンスよりも充分に高いこと、(2)チップ2
5上に形成した内部回路のインピーダンスよりも充分に
低いこと、などの諸条件を勘案すると、本実施例のもの
では数にΩ(−例としてR=IKΩ程度)に設定すると
好ましい。
Needless to say, the resistance value R of the resistance elements 46 and 47 needs to be set to an optimum value by taking various conditions into consideration. For example, (1) the power supply impedance is sufficiently higher than that when the package 20 is incorporated into a device; (2) the chip 2
Considering various conditions such as the impedance of the internal circuit formed on the resistor 5, it is preferable to set the number to Ω (for example, R=IKΩ) in this embodiment.

勿論、ICの種類や用途などによっては他の値が通して
いる場合もある。シミュレーションや実験等の結果から
最適値を設定するのが望ましい。
Of course, other values may be passed depending on the type of IC and its usage. It is desirable to set the optimum value based on the results of simulations, experiments, etc.

第4図は本実施例の詳細構成図である9この図において
、50はチップであり、チップ50上には、ひとつ内部
ロジック回路51.8つの入力回路52〜59(第5図
(a)参照)、ふたつの出力回路60.61(第5図(
b)参照)、3つの入出力回路62〜64(第5図(c
)参照)、ひとつの電源パット65.6つの接地パット
66〜71および5つの抵抗素子72〜76が形成され
ている。なお、77〜81はインバータゲートを表す。
FIG. 4 is a detailed configuration diagram of this embodiment.9 In this figure, 50 is a chip, and on the chip 50 there is one internal logic circuit 51, eight input circuits 52 to 59 (see FIG. 5(a)). ), two output circuits 60 and 61 (see Fig. 5 (
b)), three input/output circuits 62 to 64 (see Fig. 5(c)
), one power supply pad 65, six ground pads 66 to 71, and five resistance elements 72 to 76 are formed. Note that 77 to 81 represent inverter gates.

第6図は第4図の要部を示す図で、入出力回路62〜6
4、電源パット65および接地パット66〜69を含む
構成図である。
FIG. 6 is a diagram showing the main part of FIG. 4, and includes input/output circuits 62 to 6.
4 is a configuration diagram including a power pad 65 and ground pads 66 to 69.

すなわち、これらの図では、チップ50上に形成した入
出力回路62〜64(および出力回路60.61)を複
数の内部回路とし、これらの内部回路ごとに専用の接地
パット66〜68.70.71を設けると共に、ひとつ
の接地パフトロ9を共通のパットGcomoとして使用
し、この共通バントGcolloと他の接地バント (
66,67,68,70および71〉 との間をそれぞ
れ抵抗素子72〜76で接続している。
That is, in these figures, the input/output circuits 62 to 64 (and output circuits 60, 61) formed on the chip 50 are treated as a plurality of internal circuits, and a dedicated ground pad 66 to 68, 70, . 71, and one grounded bunt Gcollo is used as a common putt Gcomo, and this common bunt Gcollo and other grounded bunts (
66, 67, 68, 70 and 71> are connected by resistance elements 72 to 76, respectively.

このようにすると、抵抗素子の数や配線の数を少なくで
き、電B端子の数が多い場合に有利とすることができる
In this way, the number of resistive elements and the number of wires can be reduced, which is advantageous when the number of electric B terminals is large.

勿論、抵抗や配線の設置スペースに余裕がある場合には
対象となる全ての電源パットを交点として、マトリクス
状に抵抗素子を接続してもよく、むしろ静電破壊を回避
する面からはこの方式の採用が望ましい。なお、第4.
6図では説明の便宜上、接地パ・ノドへの適用例だけを
示したが、電源パットを複数有する場合には電源パ・ノ
ド同士も抵抗素子で接続することは言うまでもない。
Of course, if there is enough space to install the resistors and wiring, you can connect the resistor elements in a matrix using all the target power supply pads as intersection points, but this method is preferable from the standpoint of avoiding electrostatic damage. It is desirable to adopt In addition, 4th.
For convenience of explanation, FIG. 6 shows only an example of application to a ground pad/node, but it goes without saying that when a plurality of power pads are provided, the power pads/nodes are also connected to each other with a resistive element.

[発明の効果] 本発明によれば、複数の電源パット同士を抵抗素子で接
続したので、この抵抗素子を通して静電気を流すことが
できる。したがって、諸雑音対策を図りつつ内部回路の
静電破壊を回避することができる。
[Effects of the Invention] According to the present invention, since a plurality of power supply pads are connected to each other by a resistive element, static electricity can be caused to flow through the resistive element. Therefore, electrostatic damage to internal circuits can be avoided while taking measures against various noises.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の原理構成図、 第2〜6図は本発明に係る半導体集積装置の一実施例を
示す図であり、 第2図はその概念構成図、 第3図はその抵抗素子の構成図、 第4図はその詳細構成図、 第5図(a)(b)(c)はその入力回路、出力回路お
よび入出力回路のそれぞれの構成図、第6図は第4図の
要部構成図である。 第7図は従来例の静電破壊を説明する図である。 72〜76・・・・・・抵抗素子。 10・・・・・・チップ、 11a〜lln・・・・・・複数の内部回路、12a〜
12n・・・・・・電源パット、132〜13m・・・
・・・抵抗素子、25・・・・・・チップ、 26.27・・・・−・電源パット、 28.29・・・・・・接地パット(電源パット)、4
6.47・・・・・・抵抗素子、 50・・・・・・チップ、 60〜61・・・・・・出力回路(複数の内部回路)、
62〜64・・・・・・入出力回路(複数の内部回路)
66〜71・・・・・・接地パット(電源パット)、1
0 本発明の原理構成図 第1図 第 5 図 決謬小交寿 パッケージ 従来例の静電破壊を説明する図 第 図
FIG. 1 is a diagram showing the principle configuration of the present invention, FIGS. 2 to 6 are diagrams showing an embodiment of a semiconductor integrated device according to the present invention, FIG. 2 is a conceptual diagram thereof, and FIG. 3 is a resistor element thereof. Figure 4 is a detailed diagram of the configuration, Figures 5 (a), (b), and (c) are configuration diagrams of the input circuit, output circuit, and input/output circuit, and Figure 6 is the detailed configuration diagram of Figure 4. It is a main part configuration diagram. FIG. 7 is a diagram illustrating electrostatic damage in a conventional example. 72-76... Resistance elements. 10... Chip, 11a~lln... Multiple internal circuits, 12a~
12n...Power pad, 132~13m...
...Resistance element, 25... Chip, 26.27...--Power supply pad, 28.29... Ground pad (power supply pad), 4
6.47... Resistance element, 50... Chip, 60-61... Output circuit (multiple internal circuits),
62 to 64... Input/output circuit (multiple internal circuits)
66-71... Ground pad (power pad), 1
0 Principle configuration diagram of the present invention Fig. 1 Fig. 5 Fig. 5 A diagram explaining electrostatic damage of a conventional package.

Claims (1)

【特許請求の範囲】[Claims]  チップ上に形成した複数の内部回路ごとの専用電源パ
ットを有する半導体集積装置において、前記電源パット
同士を接続する抵抗素子を備えたことを特徴とする半導
体集積装置。
1. A semiconductor integrated device having dedicated power supply pads for each of a plurality of internal circuits formed on a chip, characterized in that the semiconductor integrated device is provided with a resistance element that connects the power supply pads to each other.
JP2069142A 1990-03-19 1990-03-19 Semiconductor integrated device Pending JPH03270067A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2069142A JPH03270067A (en) 1990-03-19 1990-03-19 Semiconductor integrated device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2069142A JPH03270067A (en) 1990-03-19 1990-03-19 Semiconductor integrated device

Publications (1)

Publication Number Publication Date
JPH03270067A true JPH03270067A (en) 1991-12-02

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009283673A (en) * 2008-05-22 2009-12-03 Elpida Memory Inc Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009283673A (en) * 2008-05-22 2009-12-03 Elpida Memory Inc Semiconductor device
US8901781B2 (en) 2008-05-22 2014-12-02 Ps4 Luxco S.A.R.L. Prevention of the propagation of power supply noise from one output circuit to another in a semiconductor device

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