JPH1062820A - Liquid crystal display device and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the display quality of a liquid crystal display device by stably and uniformly forming nonlinear resistance layers to be disposed at the side wall parts and part of the front surfaces of lower electrodes by simple production processes, thereby forming nonlinear resistance elements having the smaller variation in voltage-current characteristics. SOLUTION: The structure of the part constituting the nonlinear resistance element is so formed as to have the lower electrode 4 and intermediate electrode 12 to be formed in self-alignment to the lower electrode 4 on the lower electrode 4. This structure is provided with the first nonlinear resistance layer 5 consisting of the oxidized film of the lower electrode 4 in the side wall parts of the lower electrode 4 and is provided with the second nonlinear resistance layer 13 consisting of the oxidized film of the intermediate electrode on the side wall parts and front surfaces of the intermediate electrode 12. Further, the structure having an upper electrode 9 superposed on the first nonlinear resistance layer 5 and the second nonlinear resistance layer 13 is obtd. The constitution to make the resistance of the first nonlinear resistance layer 5 smaller than the second nonlinear resistance layer 13 is employed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a structure of a liquid crystal display, and more particularly to a structure of a substrate having a non-linear resistance element. On the substrate, as a nonlinear resistance element,
An object of the present invention is to provide a structure having a two-terminal nonlinear resistance element having a metal-nonlinear resistance layer-metal structure, and for easily obtaining a two-terminal nonlinear resistance element having a small area. The voltage-current characteristics of the non-linear resistance element are controlled by using the non-linear resistance layer for determining the voltage-current characteristics of the two-terminal type non-linear resistance layer as the side wall of the non-linear resistance element.

[0002]

2. Description of the Related Art In recent years, the display capacity of a liquid crystal display device using a liquid crystal panel has been steadily increasing. The structure of the liquid crystal display device includes a passive matrix type in which a display electrode of a liquid crystal pixel is directly connected to a signal electrode provided on a first substrate, and an active matrix type having a non-linear resistance element between the signal electrode and the display electrode. is there. Further, a counter electrode is provided via a liquid crystal so as to face the display electrode on the first substrate, a plurality of signal electrodes and a plurality of counter electrodes are arranged in a matrix, and the data electrode connected to the signal electrode and the counter electrode is arranged. It has a structure in which a predetermined signal is applied to the electrode from an external circuit.

[0005] The means of using multiplex driving in a liquid crystal display device having a simple matrix configuration (passive matrix type) causes a decrease in contrast or a reduction in response speed as time division is increased, so that about 200 scanning lines are required. If it does, it will be difficult to obtain sufficient contrast.

Therefore, in order to eliminate such a defect, an active matrix liquid crystal display panel in which switching elements are provided in individual pixels has been adopted.

The active matrix liquid crystal display panel is roughly classified into a three-terminal system using a thin film transistor and a two-terminal system using a non-linear resistance element. Among them, the two-terminal system is superior in that the structure and the manufacturing method are simple.

As the two-terminal switching element, a diode type, a varistor type, a TFD type and the like have been developed.

[0007] Among them, the TFD type has a feature that the structure is particularly simple and the manufacturing process is short.

A conventional example of a liquid crystal display device having a non-linear resistance element between a signal electrode and a display electrode will be described below with reference to the drawings.

FIG. 18 is a plan view showing the structure of a conventional liquid crystal display device using a nonlinear resistance element.

FIG. 19 is a sectional view showing a section taken along line AA in the plan view of FIG. Hereinafter, the prior art will be described with reference to FIGS. 18 and 19 alternately.

On the first substrate 1, a signal electrode 3 and a signal electrode 20 made of a tantalum (Ta) film as a first metal film are formed.
And a lower electrode 4 having an integral structure. Further, a non-linear resistance layer 5 made of tantalum oxide (Ta2 O5), which is an anodic oxide film of the first metal film, is provided on the signal electrode 3 and the lower electrode 4. Further, an insulating film 13 is provided on the nonlinear resistance layer 5 on the lower electrode 4 so as to be self-aligned with the lower electrode 4.
The insulating film 13 has a higher resistance than the first nonlinear resistance layer 5.

Further, a display electrode 6 made of an indium tin oxide (ITO) film is provided separately from the signal electrode 3 or the lower electrode 4. Further, the first side wall of the lower electrode 4
Then, an upper electrode 9 is formed of a chromium (Cr) film, which overlaps with the non-linear resistance layer 5, the side wall and the upper surface of the insulating film 13, further partially overlaps with the display electrode 6, and is electrically connected. The lower electrode 4, the non-linear resistance layer 5, and the upper electrode 9 form a non-linear resistance element 11. Here, since the resistance of the insulating film 13 as the second non-linear resistance layer is higher than that of the first non-linear resistance layer 5, the voltage of the non-linear resistance element 11 −
The current characteristics are determined by the thickness of the lower electrode 4, the width of the upper electrode 9, and the characteristics of the first nonlinear resistance layer 5 provided on the side wall of the lower electrode 4. The thickness of the lower electrode 4 is, for example, 100 nm.
Since it is as small as about (nanometers) to about 200 nm, a fine nonlinear resistance element can be formed.

When the first substrate 1 described above is used as a liquid crystal display device, a second substrate 22 is provided so as to face the first substrate 1. On the second substrate 22, a counter electrode 1 made of an indium tin oxide (ITO) film made of a transparent conductive film so as to face the display electrode 6.
5 Further, a data electrode (not shown) for applying a signal of an external circuit is connected to the counter electrode 15.

Further, on the first substrate 1 and the second substrate 22, alignment films 16 and 16 are provided as processing layers for regularly arranging the molecules of the liquid crystal 17, respectively.

Further, by means of a spacer (not shown),
The first substrate 1 and the second substrate 22 are opposed to each other with a predetermined gap size, and a liquid crystal 17 is sealed between the first substrate 1 and the second substrate 22.

Further, on the first substrate 1 and the second substrate 22
A polarizing plate 25 is provided thereon. Since the liquid crystal display device does not emit light by itself, a driving waveform is applied to the signal electrode 3 and the data electrode from an external circuit, and the voltage of the liquid crystal 17 in the region between the display electrode 6 and the counter electrode 15 is applied via the nonlinear resistance element 11. The liquid crystal display device performs a predetermined image display using the change in optical characteristics.

[0017]

The voltage-current characteristics of the nonlinear resistor and the capacitance of the nonlinear resistor are determined by the area of the nonlinear resistor. In particular, when the pixel density of the liquid crystal display device is increased, the capacitance of the liquid crystal becomes small, so that the capacitance of the nonlinear resistance element needs to be reduced. As the nonlinear resistance element used in the conventional liquid crystal display device, a fine element can be formed by a simple method, but an insulating film serving as a second nonlinear resistance layer provided on the first nonlinear resistance layer 5 Variations in the width of the N.sub.13 or in the adhesion between the first nonlinear resistance layer 5 and the insulating film 13 cause variations in the area of the nonlinear resistance element 11 or in the voltage-current characteristics, thereby deteriorating the display quality of the liquid crystal display device.

Further, it is necessary to form an upper electrode 9 on the lower electrode 4 and the insulating film 13. If the width of the insulating film 13 is made smaller than the width of the lower electrode 4 and the lower electrode 4 and the insulating film 13 are processed stepwise to improve the step cover of the upper electrode 9, the width of the lower electrode 4 and the insulating film 13 becomes smaller. Variations occur, resulting in display variations and a reduction in display quality.

Further, when manufacturing the liquid crystal display device of the present structure, the non-linear resistance layer 5 is provided on the surface (side wall and upper surface) of the lower electrode 4, and then the insulating film 13 is formed. As a forming method, a method of forming an insulating film such as silicon oxide (SiO 2) on the lower electrode 4 and the first substrate 1 and forming a pattern with a photosensitive resin, or a method of forming the non-linear resistance layer 5
A photosensitive resin is formed thereon, and the photosensitive resin itself is covered with an insulating film 13.
And forming an upper electrode 9 crossing the lower electrode 4.

However, when the above manufacturing method is used, since the insulating film 13 is formed on the non-linear resistance layer 5, the non-linear resistance layer 5 is deteriorated by the insulating film 13, so that the characteristic distribution of the non-linear resistance layer 5 is changed. become. Alternatively, in the case of using a photosensitive resin, the characteristic distribution of the nonlinear resistance element is obtained depending on the improvement of the adhesion between the nonlinear resistance layer 5 and the photosensitive resin or the shape of the photosensitive resin.

An object of the present invention is to solve the above-mentioned problems and to stably and uniformly provide a non-linear resistance layer provided on the side wall portion and a part of the upper surface of the lower electrode 4 by a simple manufacturing process, thereby reducing the variation in voltage-current characteristics. Provided are a structure of a liquid crystal display device and a manufacturing method for forming a small non-linear resistance element and improving the display quality of the liquid crystal display device.

Further, in a reflection type liquid crystal display device having a reflection plate on the first substrate, a signal electrode or a data electrode and a display electrode are formed of the same electrode material, and one of the signal electrode or the data electrode and the display electrode is formed. By using the portion as the lower electrode, a nonlinear resistance element can be formed efficiently. Further, two symmetrical non-linear resistance elements can be provided between the signal electrode or the data electrode and the display electrode, so that a non-linear resistance element having symmetrical voltage-current characteristics can be provided without complicating the process. provide.

Further, when the first substrate has a structure which also functions as a display electrode and a reflector, the third nonlinear resistance layer constituting the nonlinear resistance element is provided with irregularities and is formed on the display electrode. The reflective characteristics of the display electrode can be improved, and a bright reflective liquid crystal display device can be obtained.

Further, in the method of manufacturing a liquid crystal display device, a step of providing an intermediate electrode having self-alignment with the lower electrode on at least the lower electrode on which the nonlinear resistance element is provided;
A first electrode formed of an anodized film of the lower electrode on a side wall of the lower electrode;
And a step of forming a second nonlinear resistance layer comprising an intermediate electrode on the side wall and the upper surface of the intermediate electrode. By adopting this manufacturing method, the adhesion between the lower electrode and the intermediate electrode is improved, and the first nonlinear resistance layer and the second nonlinear resistance layer are formed by anodic oxidation treatment, whereby the first nonlinear resistance is improved. It is possible to improve the matching at the junction between the layer and the second nonlinear resistance layer. Further, by adopting the step of simultaneously forming the first nonlinear resistance layer and the second nonlinear resistance layer by the anodic oxidation method, it is possible to form the second nonlinear resistance layer which increases the load of the process. Becomes

Further, the first nonlinear resistance layer which contributes as a nonlinear resistance element by forming a third nonlinear resistance layer on the second nonlinear resistance layer on the intermediate electrode on the lower electrode improves the element characteristics. For the purpose, the role of improving the adhesion to the photosensitive resin and stabilizing the shape of the second nonlinear resistance layer can be shared. Therefore, a non-linear resistance element caused by a problem such as the adhesion between the first non-linear resistance layer on the lower electrode and the photosensitive resin or the adhesion between the first non-linear resistance layer and the insulating film provided on the first non-linear resistance layer. Degradation can be completely prevented.

Further, when a plurality of nonlinear resistance elements are provided between the signal electrode and the display electrode, a lower electrode, an intermediate electrode and a signal electrode constituting the nonlinear resistance element, or an anodizing electrode dedicated to anodizing treatment are provided. Connect and form each anodic oxide film on the side wall portion of the lower electrode and the side wall portion and the upper surface of the intermediate electrode, for example, it is necessary to remove the portion where the signal electrode and the lower electrode are connected after the anodizing treatment method, Provides a simple way to remove.

[0027]

In order to achieve the above object, the liquid crystal display device of the present invention employs the following constitution and manufacturing method.

The liquid crystal display device of the present invention has a signal electrode or a data electrode on a substrate, a display electrode constituting a liquid crystal pixel, and a non-linear resistance element at a portion where the signal electrode or the data electrode overlaps. In a liquid crystal display device having a counter electrode and applying a drive signal to a signal electrode and a data electrode to perform display, the non-linear resistance element includes a lower electrode made of a first metal film connected to the signal electrode or the data electrode. An intermediate electrode made of a second metal film provided on the lower electrode and a first electrode provided on a side wall of the lower electrode.
Of the second non-linear resistance layer and the side wall and the upper part of the intermediate electrode
And a first non-linear resistance layer on the lower electrode and an upper electrode overlapping the second non-linear resistance layer, the upper electrode is connected to the display electrode, and the second non-linear resistance layer is connected to the first non-linear resistance layer. That the resistance is higher than that of the nonlinear resistance layer.

The liquid crystal display device of the present invention has a signal electrode or a data electrode on a substrate, a display electrode constituting a liquid crystal pixel, and a non-linear resistance element at a portion where the signal electrode or the data electrode overlaps. In a liquid crystal display device having a counter electrode and applying a drive signal to a signal electrode and a data electrode to perform display, the non-linear resistance element includes a lower electrode made of a first metal film connected to the signal electrode or the data electrode. An intermediate electrode made of a second metal film provided on the lower electrode and a first electrode provided on a side wall of the lower electrode.
Of the second non-linear resistance layer and the side wall and the upper part of the intermediate electrode
And a third non-linear resistance layer provided on the second non-linear resistance layer, the first non-linear resistance layer, the second non-linear resistance layer, and the third non-linear resistance layer on the lower electrode And the upper electrode is connected to the display electrode, and the second nonlinear resistance layer or the third nonlinear resistance layer has a higher resistance than the first nonlinear resistance layer. .

In the liquid crystal display device of the present invention, the signal electrode or the data electrode and the display electrode are provided by using the same first electrode material. Further, an intermediate electrode made of a second electrode material is provided on the first electrode material in a self-aligned manner with the signal electrode, the data electrode, and the display electrode. Further, a first non-linear resistance layer is provided on the side wall of the signal electrode or the data electrode and the display electrode, and a second non-linear resistance layer is provided on the side wall and the upper surface of the intermediate electrode. Further, a signal electrode or data electrode is connected to the display electrode, and an upper electrode is provided on each signal electrode or data electrode and on the first nonlinear resistance layer and the second nonlinear resistance layer on the display electrode. The non-linear resistance layer employs a structure having higher resistance than the first non-linear resistance layer. Alternatively, a third nonlinear resistance layer is provided on the second nonlinear resistance layer in a self-aligned manner with the first or second electrode material, and the signal electrode or the data electrode is connected to the display electrode in the same manner as described above. An upper electrode is provided on the first nonlinear resistance layer, the second nonlinear resistance layer, and the third nonlinear resistance layer.
The non-linear resistance layer or the third non-linear resistance layer adopts a structure in which the resistance is higher than that of the first non-linear resistance layer.

According to the method of manufacturing a liquid crystal display device of the present invention, a step of forming a first metal film provided on a first substrate having an insulating property and a step of forming a second metal film on the first metal film And forming a lower electrode composed of the second metal film and the first metal film and a signal electrode composed integrally with the lower electrode, forming a lower electrode composed of the first metal film and a signal electrode, Forming an intermediate electrode made of a second metal film on the lower electrode in a self-aligned manner, forming a first non-linear resistance layer on a side wall of the lower electrode, and forming a first non-linear resistance layer on the side wall and the upper layer of the intermediate electrode Forming a second non-linear resistance layer by an anodizing process, forming an upper electrode on the first and second non-linear resistance layers on the lower electrode, and connecting to the upper electrode Forming a display electrode to be patterned.

The method of manufacturing a liquid crystal display device according to the present invention employs the following manufacturing method for achieving the structure of the liquid crystal display device. A step of forming a first metal film provided on a first substrate having an insulating property, a step of forming a second metal film on the first metal film, a second metal film and a first metal A lower electrode composed of a film and a signal electrode composed integrally with the lower electrode are patterned, a lower electrode composed of a first metal film and a signal electrode are formed, and an intermediate electrode composed of a second metal film is formed on the lower electrode. Forming a first non-linear resistance layer on the side wall of the lower electrode by anodic oxidation; anodizing the second non-linear resistance layer on the side wall and the upper layer of the intermediate electrode; Forming the upper electrode on the first nonlinear resistance layer and the second nonlinear resistance layer on the side wall of the lower electrode, and patterning the display electrode connected to the upper electrode. Process and adopt. Further, the method may include a step of forming a third nonlinear resistance layer between the second nonlinear resistance layer and the upper electrode.

According to the method of manufacturing a liquid crystal display device of the present invention, a step of forming a first metal film provided on a first substrate having an insulating property and a step of forming a second metal film on the first metal film And forming a lower electrode made of a second metal film and a first metal film, a connection portion integrally formed with the lower electrode, and a first signal electrode formed integrally with the connection portion. Forming a connection portion between the lower electrode made of a metal film and the first signal electrode, forming an intermediate electrode made of the second metal film on the lower electrode in a self-aligning manner; Forming a second non-linear resistance layer on the side wall and the upper layer of the intermediate electrode by anodic oxidation, and printing or rotating a photosensitive resin at least on and around the lower electrode. Forming by a coating method, and applying the photosensitive resin to a lower electrode or Performing a back surface exposure using the signal electrode as a mask, a second signal electrode provided on the first signal electrode, a first nonlinear resistance layer and a second nonlinear resistance layer on the lower electrode, and a photosensitive resin. An upper electrode for a signal electrode integrated with a second signal electrode provided on the upper electrode, and a first electrode on the lower electrode.
Providing a non-linear resistance layer, a second non-linear resistance layer, and a photosensitive resin, and simultaneously patterning an upper electrode for a display electrode connected to a display electrode; and patterning the display electrode; A step of removing a connection portion connecting the first signal electrodes and forming an island-shaped lower electrode is employed.

[0034]

A lower electrode made of a first electrode material and an intermediate electrode made of a second electrode material are provided as electrodes on the substrate side of the nonlinear resistance element. An intermediate electrode is provided on the lower electrode,
The lower electrode and the intermediate electrode are formed in a self-aligned manner, or the width of the lower electrode is wider than that of the intermediate electrode.
A first nonlinear resistance layer is provided on a side wall of the lower electrode;
A second nonlinear resistance layer is provided on the side wall and the upper surface of the intermediate electrode. Further, a non-linear resistance element is formed by providing an upper electrode on the first non-linear resistance layer and the second non-linear resistance layer.

The first non-linear resistance layer constituting this non-linear resistance element makes it easier for a current to flow at a low voltage than the second non-linear resistance layer. Thus, the voltage-current characteristics of the nonlinear resistance element are determined by the characteristics of the first nonlinear resistance layer, the thickness of the first nonlinear resistance layer, and the width of the upper electrode overlapping the first nonlinear resistance element. Further, a mutual diffusion layer exists at the interface between the first metal film and the second metal film.
Therefore, even if the width of the intermediate electrode is smaller than the width of the lower electrode, and a difference between the width of the lower electrode and the width of the intermediate electrode occurs, there is an interdiffusion layer. The resistance becomes higher than that of the first nonlinear resistance layer. Therefore, the voltage-current characteristics of the nonlinear resistance element are determined by the thickness of the lower electrode and the width of the upper electrode. Therefore, it is possible to obtain a nonlinear resistance element with very good controllability.

Further, the intermediate electrode is provided in a self-aligned manner with the lower electrode, and the second nonlinear resistance layer provided on the side wall and the upper surface of the intermediate electrode has a higher resistance than the first nonlinear resistance layer of a thin film. Therefore, disconnection or thinning of the upper electrode due to a step between the lower electrode and the intermediate electrode can be prevented.

Further, the lower electrode and the intermediate electrode are formed by the same pattern formation. Further, the first non-linear resistance layer provided on the side wall of the lower electrode and the second non-linear resistance layer provided on the side wall and the upper surface of the intermediate electrode are formed by anodic oxidation to thereby form the first non-linear resistance layer or the second non-linear resistance layer. Can be formed without contaminating the non-linear resistance layer. Also, by using a metal film containing tantalum as a main component as a lower electrode and using a metal film containing aluminum as a main component or an alloy film of metal and silicon as an intermediate electrode, after anodizing treatment is performed. From 150 ° C to 45
By performing the heat treatment at about 0 ° C., the resistance of the second nonlinear resistance layer can be made sufficiently higher than that of the first nonlinear resistance layer.

Further, a third nonlinear resistance layer is provided on the second nonlinear resistance layer on the intermediate electrode. The third nonlinear resistance layer has a higher resistance than the first nonlinear resistance layer. Also, a third nonlinear resistance layer is provided in a self-aligned manner with the lower electrode. Further, the width of the intermediate electrode is slightly smaller than that of the intermediate electrode.
The non-linear resistance layer is made stepwise. By providing the third nonlinear resistance layer, even if a defect or the like of the second nonlinear resistance layer occurs, the insulation between the upper electrode and the lower electrode can be maintained by the third nonlinear resistance layer. Not a defect.

Further, with respect to the method of manufacturing the liquid crystal display device, a step of providing an intermediate electrode having self-alignment with the lower electrode on at least the lower electrode on which the non-linear resistance element is provided;
A step of forming a first non-linear resistance layer formed by anodic oxidation of the lower electrode on the side wall of the lower electrode; and a step of forming a second non-linear resistance layer formed by the intermediate electrode on the side wall and the upper surface of the intermediate electrode. I do. By adopting this manufacturing method,
By improving the adhesion between the lower electrode and the intermediate electrode and forming the first nonlinear resistance layer and the second nonlinear resistance layer by anodic oxidation, the first nonlinear resistance layer and the second nonlinear resistance layer are formed. The integrity of the joint can be improved. Further, the first nonlinear resistance layer which contributes as a nonlinear resistance element by inserting the intermediate electrode and the second nonlinear resistance layer between the first nonlinear resistance layer on the lower electrode and the photosensitive resin improves the element characteristics. Therefore, it is possible to share the role of improving the adhesion with the photosensitive resin and stabilizing the shape of the second nonlinear resistance layer.

Further, a part of the signal electrode is used as a lower electrode,
A display electrode made of the same film as the signal electrode is formed.
Providing an intermediate electrode having self-alignment with the signal electrode or the display electrode, forming a first non-linear resistance layer made of an anodic oxide film of the lower electrode on the side wall of the lower electrode; Forming a second non-linear resistance layer, and further comprising a first non-linear resistance layer on the lower electrode that is a part of the signal electrode, a second non-linear resistance layer on the second non-linear resistance layer, and a part that is a part of the display electrode. By providing the mutually overlapping upper electrodes on the first nonlinear resistance layer and the second nonlinear resistance layer, a liquid crystal display device having two nonlinear resistance elements between the signal electrode and the display electrode can be easily manufactured. .

Further, as a method of manufacturing a liquid crystal display device having the above structure, a first nonlinear resistance layer formed on the side wall of the lower electrode and a second nonlinear resistance layer formed on the side wall and the upper surface of the intermediate electrode are anodized. By forming by the processing method, the first
This improves the matching between the first nonlinear resistance layer and the second nonlinear resistance layer, and improves the insulation between the first nonlinear resistance layer and the second nonlinear resistance layer. Furthermore, by using a highly reflective material for the intermediate electrode formed on the lower electrode, the display quality of the reflective liquid crystal display device can be improved without increasing the load on the manufacturing method. In the case of a liquid crystal display device having two non-linear resistance elements between a signal electrode and a display electrode, the signal electrode and the display electrode are connected by a connection portion, and further,
A lower electrode constituting the non-linear resistance element and an intermediate electrode formed on the lower electrode are formed on a part of the signal electrode and a part of the display electrode, and the signal electrode and the display electrode are anodized, and the lower electrode is formed. Forming a first non-linear resistance layer on the side wall, forming a second non-linear resistance layer on the side wall and the upper surface of the intermediate electrode, and exposing the photosensitive resin from the back surface of the substrate using the signal electrode and the display electrode as a mask; When performing the process, the process is performed without using a special mask by adopting the process of increasing the exposure amount, exposing the photosensitive resin on the connection portion, and removing the photosensitive resin on the connection portion by the development process. It is possible to remove the part. Further, when the photosensitive resin is used as the third non-linear resistance layer, it is possible to form the third non-linear resistance layer at the same time as removing the connection portion.

[0042]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of a liquid crystal display device according to the best mode for carrying out the liquid crystal display device of the present invention will be described below with reference to the drawings.

First, the configuration of a non-linear resistance element and a liquid crystal display device using the non-linear resistance element according to the first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a plan view enlarging a part of the liquid crystal display device according to the first embodiment of the present invention. FIG. 2 is a sectional view showing a section taken along line BB of the plan view of FIG. Hereinafter, a first embodiment of the present invention will be described with reference to FIGS. 1 and 2 alternately.

On a first substrate 1 made of a glass substrate,
A signal electrode 3 made of a tantalum (Ta) film, which is a first electrode material, and a lower electrode 4 integrated with the signal electrode 3 are provided. Further, an intermediate electrode 12 made of an aluminum (Al) film as a second electrode material is provided on the lower electrode 4. The intermediate electrode 12 has a shape that is self-aligned with the lower electrode 4. A tantalum oxide film (Ta2O5) made of an anodic oxide film of a tantalum film (Ta) is provided as a first nonlinear resistance layer 5 on the side wall of the lower electrode 4. further,
Aluminum oxide (Al 2 O 3) made of an oxide film of an aluminum film is provided as a second nonlinear resistance layer 13 on the side wall and the upper surface of the intermediate electrode 12.

Further, on the first substrate 1, the signal electrodes 3
The display electrode 6 and the first non-linear resistance layer 5 and the second non-linear resistance layer 13 on the lower electrode 4 are separated from each other,
An upper electrode 9 integral with the display electrode 6 is provided by an indium tin oxide (ITO) film which is a transparent conductive film.

As described above, a two-layer electrode composed of the lower electrode 4 and the intermediate electrode 12, the first non-linear resistance layer 5 provided on the side wall of the lower electrode 4, and provided on the side wall and the upper surface of the intermediate electrode 12 The nonlinear resistance element 11 is constituted by the second nonlinear resistance layer 13. Here, the first nonlinear resistance layer 5 and the second nonlinear resistance layer 13 have greatly different resistance values. That is, at the same voltage, the first nonlinear resistance layer 5 can flow a larger current than the second nonlinear resistance layer 13. Therefore, the voltage-current characteristic of the nonlinear resistance element 11 between the signal electrode 3 and the display electrode 6 is determined by the characteristic of the first nonlinear resistance layer 5.

Further, when the first substrate 1 is used for a liquid crystal display device, a second substrate 22 facing the first substrate 1 is provided. On the second substrate 22, a counter electrode 15 made of an indium tin oxide (ITO) film is provided so as to face the display electrode 6 provided on the first substrate 1.
Further, the counter electrode 15 is connected to a data electrode (not shown) for applying a signal of an external circuit.

Further, the first substrate 1 and the second substrate 22 have alignment films 16, 16, respectively, as processing layers for regularly aligning the molecules of the liquid crystal 17.

Further, by means of a spacer (not shown),
The first substrate 1 and the second substrate 22 are opposed to each other with a predetermined gap, and the liquid crystal 17 is sealed between the first substrate 1 and the second substrate 22. Further, a polarizing plate 25 is provided on the first substrate 1 and the second substrate 22.

Further, a drive waveform is applied to the signal electrode 3 and the data electrode from an external circuit to cause a change in the optical characteristics of the liquid crystal 17 between the display electrode 6 and the counter electrode 15 via the nonlinear resistance element 11. Thus, the liquid crystal display device performs a predetermined image display.

As is clear from the above description, the first non-linear resistance layer 5 provided on the side wall of the lower electrode includes the intermediate electrode 12
The resistance is smaller than that of the second non-linear resistance layer 13 provided on the side wall and the upper surface of the substrate, so that a large current can flow with a small voltage.

Further, the area of the first nonlinear resistance layer 5 which determines the voltage-current characteristics of the nonlinear resistance element 11 is determined by the thickness of the first electrode material and the area of the overlapping portion between the first electrode material and the upper electrode 9. Is determined by Therefore, if the film thickness of the first electrode material is, for example, 100 nanometers, 5 μm
Even when two nonlinear resistance elements are formed, 5 μm
The width of the upper electrode enables the pattern accuracy of the upper electrode to be made easier. Further, since both the first electrode material and the second electrode material can form the first nonlinear resistance layer 5 and the second nonlinear resistance layer 13 by anodizing treatment, respectively, When anodizing the first electrode material or when anodizing the second electrode material, there is no separation between the first electrode material and the second electrode material,
The first nonlinear resistance layer 5 and the second nonlinear resistance layer 13 can be formed stably.

As described above, the first electrode material and the second electrode material
Is an electrode capable of being anodized, a first nonlinear resistance layer 5 is formed on the side wall of the first electrode material, and a second nonlinear resistance layer 13 is formed on the side wall and the upper surface of the second electrode material. Is formed, the first nonlinear resistance layer 5 and the second nonlinear resistance layer 13 can be obtained very stably. for that reason,
There is no variation in the area of the non-linear resistance element 11, and a good non-linear resistance element 11 can be obtained.

Next, the voltage in the case of the nonlinear resistance element having the structure using this embodiment and the voltage in the case of the nonlinear resistance element shown in the conventional example are shown.
The variation in the current characteristics will be described with reference to FIG. In FIG. 3, the horizontal axis indicates the voltage applied to the nonlinear resistance element, and the vertical axis indicates the electrode flow flowing through the nonlinear resistance element on a logarithmic axis. FIG.
Is a graph represented by curves X, Y, and Z, where curve X is a voltage-current characteristic when the present embodiment is used, and curves Y and Z are characteristics of a voltage-current characteristic of a conventional nonlinear resistance element. FIG. In the conventional example, when trying to obtain the voltage-current characteristics shown by the curve X, variations occur within the range of the curves Y and Z. As an item for evaluating the performance of the nonlinear resistance element, a low current region (I
1) and the large large current region (I2) is used. The low current region is an important item for evaluating how much charge accumulated in the liquid crystal can be held during the selection period when the nonlinear resistance element is used in a liquid crystal display device. The large current region is an important item indicating how much charge can be written to the liquid crystal during the selection period. Therefore, variations in the voltage-current characteristics between the low current region and the large current region cause variations in the display quality of the liquid crystal display device. As shown in FIG. 3, as a result of the experiment, in the conventional example, the difference between the curves Y and Z is large, and the variation of ΔI1 occurs in the low current region (I1), and the variation of ΔI2 occurs in the large current region (I2). doing. However, when the present embodiment is used, the voltage-current characteristics represented by the curve X are found, and the variation (ΔI1, I2) is very small. Furthermore, it was found that reproducibility was very good by using this embodiment.

Next, the configuration of a non-linear resistance element and a liquid crystal display device using the non-linear resistance element according to the second embodiment of the present invention will be described with reference to FIGS. The second embodiment relates to a case where the present invention is applied to a liquid crystal display device having a configuration having two nonlinear resistance elements between a signal electrode and a display electrode. FIG. 4 is an enlarged plan view of a part of the liquid crystal display device according to the second embodiment of the present invention. FIG. 5 is a sectional view showing a section taken along line CC of the plan view of FIG. Hereinafter, a second embodiment of the present invention will be described with reference to FIGS. 4 and 5 alternately.

A signal electrode 3 made of a tantalum (Ta) film as a first electrode material, a signal electrode 3, a connecting portion 26, and a lower electrode 4 are formed on a first substrate 1 made of a plus chip substrate.
Are provided in an integrated structure. Further, an intermediate electrode 12 made of an aluminum (Al: Si) film containing silicon (Si) as impurity ions as a second electrode material is provided on the lower electrode 4. The intermediate electrode 12 has a shape that is self-aligned with the lower electrode 4. A tantalum oxide film (Ta2O5) made of an anodic oxide film of a tantalum film (Ta) is provided as a first nonlinear resistance layer 5 on the side walls of the signal electrode 3, the connection portion 26, and the lower electrode 4. Further, the intermediate electrode 12
An aluminum oxide: silicon oxide film (Al2) made of an oxide film of an aluminum film containing silicon as impurity ions as the second nonlinear resistance layer 13 is formed on the side wall and the upper surface of
O3: SiO2). Further, a photosensitive polyimide resin is provided as a third nonlinear resistance layer 27 on the upper surface of the second electrode material having the second nonlinear resistance layer 13. Third nonlinear resistance layer 27 also has a shape that is self-aligned with lower electrode 4.

Further, the signal electrode 3 is provided on the first substrate 1.
A display electrode 6 is provided by using indium tin oxide (ITO) which is a transparent conductive film. Further, an upper electrode for a display electrode which is integral with the display electrode 6 and overlaps the first nonlinear resistance layer 5, the second nonlinear resistance layer 13, and the third nonlinear resistance layer 27 on the lower electrode 4. 34, and the signal electrode unit 20 provided on the signal electrode 3 has an integral structure,
In addition, a first non-linear resistance layer 5 on the lower electrode 4, a signal electrode upper electrode 33 overlapping the second non-linear resistance layer 13 and the third non-linear resistance layer 27 are provided.

As described above, the two-layer electrode composed of the lower electrode 4 and the intermediate electrode 12, the first nonlinear resistance layer 5 provided on the side wall of the lower electrode 4, and the second nonlinear electrode 5 provided on the side wall and the upper surface of the intermediate electrode 12 The second nonlinear resistance layer 13, the third nonlinear resistance layer 27, and the signal electrode upper electrode 33 constitute the first nonlinear resistance element 11. Further, the lower electrode 4 and the intermediate electrode 1
2, a first nonlinear resistance layer 5 provided on the side wall of the lower electrode 4, a second nonlinear resistance layer 13 provided on the side wall and the upper surface of the intermediate electrode 12, and a third nonlinear resistance layer The second non-linear resistance element 12 is constituted by 27 and the display electrode upper electrode 34. Here, the first nonlinear resistance layer 5 and the second nonlinear resistance layer 13 or the third nonlinear resistance layer 1
4 differs greatly in resistance value. That is, at the same voltage, the first nonlinear resistance layer 5 becomes the second nonlinear resistance layer 1
A larger current can flow than the third or third nonlinear resistance layer 14. Therefore, the voltage-current characteristics of the nonlinear resistance elements 11 and 12 between the signal electrode 3 and the display electrode 6 are determined by the characteristics of the first nonlinear resistance layer 5.

Further, when the first substrate 1 is used for a liquid crystal display device, a second substrate 22 facing the first substrate 1 is provided. On the second substrate 22, a counter electrode 15 made of an indium tin oxide (ITO) film is provided so as to face the display electrode 6. Further, the counter electrode 15
It is connected to a data electrode (not shown) for applying a signal of an external circuit.

Further, the first substrate 1 and the second substrate 22 have alignment films 16, 16, respectively, as processing layers for regularly arranging the molecules of the liquid crystal 17.

Further, by means of a spacer (not shown),
The first substrate 1 and the second substrate 22 are opposed to each other with a predetermined gap, and the liquid crystal 17 is sealed between the first substrate 1 and the second substrate 22. Further, a polarizing plate 25 is provided on the first substrate 1 and the second substrate 22.

Further, a drive waveform is applied to the signal electrode 3 and the data electrode from an external circuit to cause a change in optical characteristics of the liquid crystal 17 between the display electrode 6 and the counter electrode 15 via the nonlinear resistance element 11. Thus, the liquid crystal display device performs a predetermined image display.

As is clear from the above description, the first non-linear resistance layer 5 provided on the side wall of the lower electrode includes the intermediate electrode 13
The resistance is smaller than that of the second non-linear resistance layer 14 or the third non-linear resistance layer 27 provided on the side wall portion and the upper surface of the first non-linear resistance layer, and a large current can be passed with a small voltage.

Further, the area of the first nonlinear resistance layer 5 which determines the voltage-current characteristics of the nonlinear resistance elements 11 and 12 is:
It is determined by the thickness of the first electrode material and the area of the overlapping portion of the first electrode material and the upper electrode 9. Therefore, if the thickness of the first electrode material is, for example, 100 nanometers,
Even when a non-linear resistance element of 5 μm 2 is formed,
This is possible with a width of the upper electrode of 5 μm, and the pattern accuracy of the upper electrode can be facilitated. Further, both the first electrode material and the second electrode material are anodized to form the first nonlinear resistance layer 5 and the second nonlinear resistance layer 13 respectively.
When the first electrode material is anodized, or when the second electrode material is anodized, separation between the first electrode material and the second electrode material may occur. The first nonlinear resistance layer 5 and the second nonlinear resistance layer 13
Can be formed stably.

Further, the alignment treatment or liquid crystal 1 generated when the second non-linear resistance layer 13 is used for a liquid crystal display device.
2 to prevent deterioration etc. caused by contact with
A third non-linear resistance layer 27 is provided on the non-linear resistance layer 13 using a photosensitive polyimide resin. Since this photosensitive polyimide resin is provided in a self-aligning manner using the lower electrode 4, when the first nonlinear resistance layer 5 or the second nonlinear resistance layer 13 is provided, it does not affect the second nonlinear resistance layer 13. After the formation of the non-linear resistance layer 13 of FIG.

As described above, the first electrode material and the second
Is an electrode capable of being anodized, a first nonlinear resistance layer 5 is formed on the side wall of the first electrode material, and a second nonlinear resistance layer 13 is formed on the side wall and the upper surface of the second electrode material. Is formed, the first nonlinear resistance layer 5 and the second nonlinear resistance layer 13 can be obtained very stably. Further, since the third nonlinear resistance layer 27 is provided on the second nonlinear resistance layer 13 in a self-aligned manner with the lower electrode 4, the nonlinear resistance element 1
The first non-linear resistance layer 13 can be prevented from deteriorating, and good non-linear resistance elements 11 and 12 can be obtained.

As is clear from the above, by using the second embodiment, the variation in the voltage-current characteristics of the nonlinear resistance element can be reduced as in the first embodiment. Further, since the first electrode material, the second electrode material, the second non-linear resistance layer, and the third non-linear resistance layer 27 increase the film thickness, in this embodiment, the side wall of the lower electrode is formed by the non-linear resistance layer. Are made steep in order to keep the area constant and to reduce the distribution. The second electrode material and the third nonlinear resistance layer are tapered. By employing this structure, the distribution is small and the probability of disconnection of the upper electrode overlapping the lower electrode can be greatly reduced.

Next, the structure of a non-linear resistance element and a liquid crystal display device using the non-linear resistance element according to the third embodiment of the present invention will be described with reference to FIGS. FIG. 6 is an enlarged plan view of a part of the liquid crystal display device according to the third embodiment of the present invention. FIG. 7 is a sectional view showing a section taken along line DD of the plan view of FIG. Hereinafter, the third embodiment of the present invention will be described with reference to FIGS. 6 and 7 alternately.

On the first substrate 1 made of a glass substrate,
A signal electrode 3 made of a tantalum (Ta: Si) film containing silicon (Si) as an impurity ion as a first electrode material, a connection part 26 formed integrally with the signal electrode 3, and a display formed integrally with the connection part 26 An electrode 6 is provided. Further, an intermediate electrode 12 made of an aluminum (Al: Ta) film containing tantalum (Ta) as a second electrode material as impurity ions is provided on the signal electrode 3, the connection portion 26, and the display electrode 6. The intermediate electrode 12 has a shape that is self-aligned with each part made of the first electrode material. The first non-linear resistance layer 5 is provided on the side walls of the signal electrode 3 and the display electrode 6.
Tantalum oxide silicon film (Ta) made of a tantalum film anodic oxide film containing silicon as impurity ions
2O5: SiO2). Further, the intermediate electrode 1
A tantalum oxide: silicon oxide film (Al 2 O 2) made of an oxide film of an aluminum film containing tantalum as impurity ions as the second nonlinear resistance layer 13
3: Ta2O5) is provided. Further, a second nonlinear resistance layer 13 is provided. Further, a third nonlinear resistance layer 27 made of a photosensitive polyimide resin is provided on the second nonlinear resistance layer 13. That is, the signal electrode 3, the display electrode 6, and the signal electrode 3
And a third non-linear resistance layer 27 on the second non-linear resistance layer 13 on the connection part 26 connecting the display electrode 6 and the display electrode 6, and the line width of the connection part 26 is set to 1 μm to 5 μm. As a result, the third nonlinear resistance layer 27
When processing is performed in a self-aligned manner with the underlying first electrode material, the connecting portion 26 is formed by over-exposure and side etching.
Since the upper third nonlinear resistance layer 27 is removed, the connection portion 26 can be removed by performing an etching process using the third nonlinear resistance layer 27 as a mask, and the signal electrode 3 can be removed.
And the display electrode 6 can be electrically separated.

Further, the signal electrode 3 is provided on the first substrate 1.
An upper electrode 9 overlapping with each of the above non-linear resistance layers 5, 13, 27 and overlapping with each of the non-linear resistance layers 5, 13, 27 on the display electrode 6 is provided by a chromium (Cr) film. The first non-linear resistance element 31 is constituted by the non-linear resistance layers 5, 13, 27 on the signal electrode 3 and the upper electrode 9, and the first non-linear resistance element 31 is formed by the non-linear resistance layers 5, 13, 27 and the upper electrode 9 on the display electrode 6. Two non-linear resistance elements 32 are configured. A signal electrode unit 20 including the signal electrode 3 and each of the non-linear resistance layers 5, 13, 27
Therefore, the display electrode 6 has a first nonlinear resistance element 31 and a second nonlinear resistance element 32 having a symmetrical structure when viewed from the upper electrode.

As described above, the two-layer electrode composed of the lower electrode 4 and the intermediate electrode 12, the first non-linear resistance layer 5 provided on the side wall of the lower electrode 4, and the second nonlinear electrode 5 provided on the side wall and the upper surface of the intermediate electrode 12 The nonlinear resistance element 11 is configured by the second nonlinear resistance layer 13 and the third nonlinear resistance layer 14. Here, the resistance values of the first nonlinear resistance layer 5 and the second nonlinear resistance layer 13 or the third nonlinear resistance layer 14 are significantly different. That is, at the same voltage, the first nonlinear resistance layer 5 can flow a larger current than the second nonlinear resistance layer 13 or the third nonlinear resistance layer 27. Therefore, the voltage-current characteristics of the nonlinear resistance elements 32 and 33 between the signal electrode 3 and the display electrode 6 are determined by the characteristics of the first nonlinear resistance layer 5.

Further, since the first non-linear resistance element 31 and the second non-linear resistance element 32 are provided between the signal electrode section 20 and the display electrode 6, the voltage applied to each non-linear resistance element 31, 32 As compared with the case where a single non-linear resistance element is provided, it is half, and the second non-linear resistance layer 13 or the third
The voltage applied to the non-linear resistance layer 14 of FIG. Furthermore, since the configuration is symmetrical with respect to the upper electrode 9, the symmetry of the voltage-current characteristics is very good.

Further, since the surface of the display electrode 6 uses an aluminum film containing tantalum as an impurity ion as the second electrode material, the reflection performance is excellent. Further, irregularities are formed on the surface of the third non-linear resistance layer 27 to maintain the transmittance and secure the scattering properties, so that the display electrodes 6 are formed.
And the scattering property of the third nonlinear resistance layer 27 can be secured at the same time. Therefore, it is very effective for a method of forming a reflector on the surface of the first substrate 1 on which the nonlinear resistance element is formed.

Further, when the first substrate 1 is used for a liquid crystal display device, a second substrate 22 facing the first substrate 1 is provided. On the second substrate 22, a counter electrode 15 made of an indium tin oxide (ITO) film is provided so as to face the display electrode 6 provided on the first substrate 1.
Further, the counter electrode 15 is connected to a data electrode (not shown) for applying a signal of an external circuit.

Further, the first substrate 1 and the second substrate 22 have alignment films 16, 16, respectively, as processing layers for regularly arranging the molecules of the liquid crystal 17.

Further, by means of a spacer (not shown),
The first substrate 1 and the second substrate 22 are opposed to each other with a predetermined gap, and the liquid crystal 17 is sealed between the first substrate 1 and the second substrate 22. Further, a polarizing plate 25 is provided on the second substrate 22.

Further, a drive waveform is applied to the signal electrode 3 and the data electrode from an external circuit, and the signal is applied between the display electrode 6 and the counter electrode 15 via the first nonlinear resistance element 31 and the second nonlinear resistance element 32. The liquid crystal display device displays a predetermined image by causing a change in the optical characteristics of the liquid crystal 17.

As is clear from the above description, the signal electrode 3
Alternatively, the first nonlinear resistance layer 5 provided on the side wall of the display electrode 6 has a lower resistance and a lower voltage than the second nonlinear resistance layer 14 or the third nonlinear resistance layer 27 provided on the side wall and the upper surface of the intermediate electrode 13. Large current can flow.

As described above, similarly to the second embodiment, the first electrode material and the second electrode material are electrodes that can be subjected to anodic oxidation, and the first electrode material is formed on the side wall of the first electrode material. A non-linear resistance layer 5 is formed and a second electrode material
By forming the non-linear resistance layer 13 described above, the first non-linear resistance layer 5 and the second non-linear resistance layer 13 can be obtained very stably. Furthermore, since the third nonlinear resistance layer 27 is provided on the second nonlinear resistance layer 13 in a self-aligned manner with the first electrode material, the area of the first nonlinear resistance element 31 and the second nonlinear resistance element 32 is reduced. There is no variation, the deterioration of the second nonlinear resistance layer 13 can be prevented, and a good liquid crystal display device can be obtained.

Further, since the surface of the display electrode 6 uses an aluminum film containing tantalum as an impurity ion as a second electrode material, it has good reflection performance. Further, irregularities are formed on the surface of the third non-linear resistance layer 27 to maintain the transmittance and secure the scattering properties, so that the display electrodes 6 are formed.
And the scattering property of the third nonlinear resistance layer 27 can be secured at the same time. Therefore, it is very effective for a method of forming a reflector on the surface of the first substrate 1 on which the nonlinear resistance element is formed. Further, between the display electrode 6 and the counter electrode 15,
Since the second nonlinear resistance layer 13 and the third nonlinear resistance layer 27 are provided, for example, even if a pinhole defect occurs in the second nonlinear resistance layer 13, the third nonlinear resistance layer 27 is formed. Therefore, an electrical short circuit between the display electrode 6 and the counter electrode 15 can be efficiently prevented.

Next, in a third embodiment of the present invention,
A case where the display electrode 6 or the third non-linear resistance layer 27 of the signal electrode section 20 has no irregularities will be described with reference to FIG. FIG. 8 is a cross-sectional view showing a cross section taken along line DD of the plan view of FIG. 6, similarly to FIG. Hereinafter, another embodiment of the third embodiment of the present invention will be described with reference to FIG.

On a first substrate 1 made of a glass substrate,
A signal electrode 3 made of a tantalum (Ta: Si) film containing silicon (Si) as an impurity ion as a first electrode material, a connection part 26 formed integrally with the signal electrode 3, and a display formed integrally with the connection part 26 An electrode 6 is provided. Further, an intermediate electrode 12 made of an aluminum (Al: Ta) film containing tantalum (Ta) as a second electrode material as impurity ions is provided on the signal electrode 3, the connection portion 26, and the display electrode 6. The intermediate electrode 12 has a shape that is self-aligned with each part made of the first electrode material. The first non-linear resistance layer 5 is provided on the side walls of the signal electrode 3 and the display electrode 6.
Tantalum oxide silicon film (Ta) made of a tantalum film anodic oxide film containing silicon as impurity ions
2O5: SiO2). Further, the intermediate electrode 1
A tantalum oxide: silicon oxide film (Al 2 O 2) made of an oxide film of an aluminum film containing tantalum as impurity ions as the second nonlinear resistance layer 13
3: Ta2O5) is provided. Further, a second nonlinear resistance layer 13 is provided. Further, a third nonlinear resistance layer 27 made of a photosensitive polyimide resin is provided on the second nonlinear resistance layer 13. In the present embodiment, the connection portion (not shown) is etched away from the first substrate 1 by another patterning process. Therefore, the lower electrode 4 and the intermediate electrode 12 are not stepped.

Further, the signal electrode 3 is provided on the first substrate 1.
An upper electrode 9 overlapping with each of the above non-linear resistance layers 5, 13, 27 and overlapping with each of the non-linear resistance layers 5, 13, 27 on the display electrode 6 is provided by a chromium (Cr) film. The first non-linear resistance element 31 is constituted by the non-linear resistance layers 5, 13, 27 on the signal electrode 3 and the upper electrode 9, and the first non-linear resistance element 31 is formed by the non-linear resistance layers 5, 13, 27 and the upper electrode 9 on the display electrode 6. Two non-linear resistance elements 32 are configured. A signal electrode unit 20 including the signal electrode 3 and each of the non-linear resistance layers 5, 13, 27
Therefore, the display electrode 6 has a first nonlinear resistance element 31 and a second nonlinear resistance element 32 having a symmetrical structure when viewed from the upper electrode.

As described above, the two-layer electrode composed of the lower electrode 4 and the intermediate electrode 12, the first non-linear resistance layer 5 provided on the side wall of the lower electrode 4, and the second nonlinear electrode 5 provided on the side wall and the upper surface of the intermediate electrode 12 The nonlinear resistance element 11 is configured by the second nonlinear resistance layer 13 and the third nonlinear resistance layer 14. Here, the resistance values of the first nonlinear resistance layer 5 and the second nonlinear resistance layer 13 or the third nonlinear resistance layer 14 are significantly different. That is, at the same voltage, the first nonlinear resistance layer 5 can flow a larger current than the second nonlinear resistance layer 13 or the third nonlinear resistance layer 27. Therefore, the voltage-current characteristics of the nonlinear resistance elements 32 and 33 between the signal electrode 3 and the display electrode 6 are determined by the characteristics of the first nonlinear resistance layer 5.

Further, since the first non-linear resistance element 31 and the second non-linear resistance element 32 are provided between the signal electrode section 20 and the display electrode 6, the voltage applied to each non-linear resistance element 31, 32 As compared with the case where a single non-linear resistance element is provided, it is half, and the second non-linear resistance layer 13 or the third
The voltage applied to the non-linear resistance layer 14 of FIG. Furthermore, since the configuration is symmetrical with respect to the upper electrode 9, the symmetry of the voltage-current characteristics is very good.

Next, a method of manufacturing a first substrate, which is a special feature of the liquid crystal display device having a nonlinear resistance element according to the first embodiment of the present invention, will be described with reference to the drawings. 9 and 10 are sectional views showing the first embodiment. The manufacturing process will be described below with reference to FIGS.

First, as shown in FIG. 9, a tantalum (Ta) film as a first electrode material is formed on a first substrate 1 made of a glass substrate to a thickness of 150 nm. Further, aluminum (Al) as a second electrode material is formed on tantalum.
A film is formed to a thickness of 100 nanometers. A photosensitive resin (not shown) is formed on the aluminum film by a spin coating method. First, a pattern is formed on the aluminum film by a wet etching method using a mixed solution of phosphoric acid, nitric acid and acetic acid. Further, a tantalum film is self-aligned with the aluminum film by using an aluminum film, and sulfur hexafluoride (SF6) and oxygen (O2) are used.
Ion etching (RIE) using mixed gas of
The pattern is formed by the method. Then, the signal electrode 3 and the lower electrode 4 having the same structure are formed.

Further, the aluminum film and the tantalum film are simultaneously subjected to wet anodic oxidation to form an anodic oxide film (the first nonlinear resistance layer 5 and the second nonlinear resistance layer 13) on the aluminum film and the tantalum film. The anodizing treatment is performed using an aqueous citric acid solution at an anodizing voltage of 40V. After the anodizing treatment, aluminum oxide (Al2O3) and tantalum oxide (Ta2O5) have almost the same insulating properties. Therefore, a heat treatment at 200 ° C. after the anodizing treatment promotes the oxidation of the aluminum oxide film and increases the porosity. The insulation property is improved by improving the property.

Next, as shown in FIG. 10, an indium tin oxide (ITO) film, which is a transparent conductive film, is formed on each of the electrodes and the entire surface of the substrate 1, and a photosensitive resin is formed by a spin coating method. The display electrode 6 and the upper electrode 9 integrated with the display electrode 6 are formed by patterning an indium tin oxide (ITO) film.

With the above steps, the first electrode material and the second
A lower electrode 4 which is a first non-linear resistance layer 5 provided on a side wall of the lower electrode 4 and a lower electrode 4 which is integrally formed with the signal electrode portion 20 and the signal electrode 3 having a two-layer structure of
An aluminum oxide film as the second nonlinear resistance layer 13 is provided on the side wall and the upper surface of the substrate. Further, an upper electrode 9 overlapping with the lower electrode 4 is formed, and a nonlinear resistance element 11 is formed.

The non-linear resistance element formed by the above manufacturing process has a first non-linear resistance layer 5 and a second non-linear resistance layer 13 on the side wall of the lower electrode 4 and a second non-linear resistance layer 13 on the upper surface. Although it has the non-linear resistance layer 13, according to experiments, the insulation between the tantalum oxide film and the aluminum oxide film is 100 to 1
Since there is a difference of 000 times or more, the lower electrode 4 and the upper electrode 9
A first nonlinear resistance layer 5 made of a tantalum oxide film
Causes a current to flow. Therefore, the voltage-current characteristic of the nonlinear resistance element 11 is determined by the area of the overlapping portion between the first nonlinear resistance layer 5 and the upper electrode 9.

Next, a method of manufacturing a first substrate, which is a special feature of the liquid crystal display device having a nonlinear resistance element according to the second embodiment of the present invention, will be described with reference to the drawings. FIG.
To FIG. 13 are cross-sectional views showing the second embodiment. The manufacturing process will be described below with reference to FIGS.

As shown in FIG. 11, a 100 nm tantalum (Ta) film as a first electrode material is formed on a first substrate 1 made of a plastic substrate. Further, an aluminum (Al: Si) film containing silicon (Si) as a second electrode material as impurity ions is formed on the tantalum to a thickness of 100 nm. A photosensitive resin (not shown) is formed on the aluminum film by a spin coating method.
Carbon chloride (CCl4), hydrogen (H2) and helium (H
e) Reactive ion etching (RI) using mixed gas
A pattern is formed by the method E). Next, a tantalum film is self-aligned with an aluminum film containing silicon as an impurity ion to form a sulfur hexafluoride (SF6) and oxygen (O
The pattern is formed by the reactive ion etching method using the mixed gas of 2). Then, the signal electrode 3 having the same structure, a connection portion (not shown), and the lower electrode 4 are formed. An aluminum (Al: Si) film containing silicon (Si) as an impurity ion, which is a second electrode material, is formed into a tapered shape by etching a photosensitive resin during a reactive ion etching process. Next, the tantalum film uses the second electrode material as a mask, and the second electrode material is not etched during the reactive ion etching of the first electrode material. Processing becomes possible.

Further, an anodic oxide film is formed on the aluminum film and the tantalum film containing silicon as impurity ions by simultaneously performing wet anodic oxidation on the aluminum film and tantalum film containing silicon as impurity ions. The anodizing treatment is performed using an aqueous boric acid solution at an anodizing voltage of 20V. After the anodizing treatment, aluminum oxide containing silicon oxide (Al2O3:
SiO2) and tantalum oxide (Ta2O5), which is the second non-linear resistance layer, have almost the same insulating properties. As a result of experiments, nitrogen (N2) and hydrogen (H
By performing the heat treatment at 120 ° C. in the plasma using the mixed gas of 2), the insulating property of the silicon oxide is greatly improved by the hydrogenation treatment of the silicon oxide, and the insulating property of the aluminum oxide film is also improved. Since it is known, the above method is adopted. In the present embodiment, since a plastic substrate is used as the substrate, it is necessary to set the heat treatment temperature to at least 120 ° C. or lower for the heat resistance of the plastic substrate. If a heat treatment temperature of, for example, about 250 can be used, the insulating property of the aluminum oxide film containing silicon oxide can be further improved. Further, by using a material mainly composed of aluminum having a small film stress as the second electrode material, it is effective in preventing warpage of the plastic substrate.

Further, as shown in FIG. 12, a photosensitive polyimide resin 27 is selectively formed on the lower electrode 4 and its periphery by a printing method to assist the insulation on the upper surface of the second nonlinear resistance layer 13. . By using the printing method, the amount of the photosensitive polyimide resin used can be extremely reduced, which contributes to low cost. Here, using the lower electrode 4 and the signal electrode 3 as a mask, the photosensitive polyimide resin is exposed to light from the surface of the first substrate 1 opposite to the lower electrode 4, and is exposed on the lower electrode 4 by development. The third nonlinear resistance layer 2 is formed on the upper surface of the second nonlinear resistance layer 13 and a part of the signal electrode 3.
As 7, a photosensitive polyimide resin is formed. At the time of exposure processing of the photosensitive resin, rather than slightly overexposing,
The shape of the photosensitive resin is a shape that recedes from the second electrode material.

Further, as shown in FIG. 13, an indium tin oxide (ITO) film, which is a transparent conductive film, is formed on each of the electrodes and on the entire surface of the substrate 1, and a photosensitive resin (not shown) is formed.
Is formed by a spin coating method, and indium tin oxide (IT
O) The film is patterned to form the display electrode 6, the display electrode upper electrode 34 integrated with the display electrode 6, and the signal electrode upper electrode 33 integrated with the signal electrode unit 20.

Further, a photosensitive resin (not shown) is formed on the entire surface of the substrate, and the connection portion 26 connecting the signal electrode 3 and the lower electrode 4 is removed by etching from the first substrate 1. Through the above steps, a substrate for a liquid crystal display device having two non-linear resistance elements between the signal electrode unit 20 and the display electrode 6 can be manufactured.

The non-linear resistance element formed by the above-described manufacturing process has a first non-linear resistance layer 5 and a second non-linear resistance layer 13 on the side wall of the island-shaped lower electrode 4 and a non-linear resistance layer 13 on the upper surface. According to the experiment, the insulation between the tantalum oxide film and the aluminum oxide film containing silicon oxide has a difference of about 100 times. A current flows between the first electrode 4 and the upper electrode 9 through the first nonlinear resistance layer 5 made of a tantalum oxide film. Further, since a photosensitive polyimide resin capable of obtaining high insulation at a low temperature is formed on the upper surface of the second nonlinear resistance layer 13, the voltage-current characteristics of the nonlinear resistance element 12 are different from those of the first nonlinear resistance layer. 5 is determined by the area of the overlapping portion of the upper electrode 9.

Next, a method of manufacturing a third substrate, which is a special feature of the liquid crystal display device having a nonlinear resistance element according to the third embodiment of the present invention, will be described with reference to the drawings. FIG.
To FIG. 17 are sectional views showing the third embodiment. Hereinafter, the manufacturing process will be described with reference to FIGS.

As shown in FIG. 14, a tantalum (Ta: Si) film containing silicon (Si) as a first electrode material as impurity ions is formed on a first substrate 1 made of an insulating glass substrate. Is formed 100 nanometers. Further, an aluminum (Al: Ta) film containing tantalum (Ta) as a second electrode material as impurity ions is formed to a thickness of 100 nm on tantalum containing silicon as impurity ions. A photosensitive resin (not shown) is formed on the aluminum film by a spin coating method. First, an aluminum film containing tantalum as impurity ions is formed of sulfur hexafluoride (S
F6) A pattern is formed by a reactive ion etching method using a mixed gas of oxygen (O2) and argon (Ar). Next, a tantalum film containing silicon as an impurity ion is self-aligned with an aluminum film containing tantalum as an impurity ion by a reactive ion etching method using a mixed gas of sulfur hexafluoride (SF6) and oxygen (O2). Form a pattern. Then, a signal electrode and a display electrode having the same structure are formed. Further, the signal electrode and the display electrode have an integrated structure by a connection portion having a line width of 3 μm.

Further, an aluminum film containing tantalum as impurity ions and a tantalum film containing silicon as impurity ions are simultaneously anodically oxidized on the aluminum film containing tantalum as impurity ions and the tantalum film containing silicon as impurity ions. Form a film. Anodizing solution is 18V using an organic acid aqueous solution.
At an anodic oxidation voltage of After the anodic oxidation treatment, aluminum oxide (Al 2 O 3: Ta 2 O 5) containing tantalum oxide as a second nonlinear resistance layer and tantalum oxide (T 2) containing silicon as a first nonlinear resistance layer as impurity ions
a2O5: Ta2O5) has almost the same insulating properties. As a result of the experiment, it was found that the insulating property of the aluminum oxide film containing tantalum oxide was improved by the combined effect by light irradiation annealing containing ultraviolet rays after the anodic oxidation treatment. Therefore, the above method is adopted. Further, the insulating property can be further improved by using heat in combination with light, but care must be taken because the insulating property of the first nonlinear resistance layer is improved.

Further, as shown in FIG. 15, a photosensitive polyimide resin is formed by a spin coating method to assist the insulation on the upper surface of the second nonlinear resistance layer. Although a printing method can be used, the signal electrode 3 and the display electrode 6 are coated over the entire surface and over a wide area since the photosensitive polyimide resin is also used as an etching mask of the connection portion 26 connecting the display electrode and the signal electrode. Since it is necessary, a spin coating method is adopted.
A third layer formed on each of the electrodes, the nonlinear resistance layer, and the substrate;
The photosensitive polyimide resin, which is the non-linear resistance layer 27, is exposed and developed from the surface of the first substrate 1 opposite to the signal electrodes 3 using the signal electrodes 3 and the display electrodes 6 as masks. At this time, over-exposure is performed, and no photosensitive resin is formed on the connection portion 26 connecting the signal electrode 3 and the display electrode 6.

Further, as shown in FIG. 16, the connection portion is removed from the first substrate by a reactive ion etching method using a photosensitive polyimide resin as an etching mask, thereby forming an isolated signal electrode 3 and a display electrode 6. At this time, a first side provided on the side wall of the signal electrode 3 or the side wall of the display electrode 6 is formed.
The non-linear resistance layer 5 and the second non-linear resistance layer 13 are removed by etching.
At an anodic oxidation voltage of At this time, since the second nonlinear resistance layer 13 was already formed on the upper surface of the lower electrode 4 at the same voltage, the photosensitive polyimide resin 27 was not separated from the second nonlinear resistance layer 13 at all. . Further, light irradiation annealing including ultraviolet rays is performed again to obtain the second nonlinear resistance layer 1.
3 to increase the insulation. In addition, by irradiating the surface of the photosensitive resin 27 with ultraviolet light while changing the intensity of the surface in a planar manner, irregularities can be formed on the surface of the photosensitive resin 27. In order to further improve the accuracy of the unevenness, the substrate may be washed with an aqueous alkali solution after irradiation with ultraviolet rays.

Further, as shown in FIG.
r) A film is formed on each of the electrodes and on the entire surface of the substrate 1, a photosensitive resin (not shown) is formed by a spin coating method, and a chromium film is patterned to overlap the signal electrode 6, and An upper electrode 9 overlapping with 6 is formed.

By the above steps, the first electrode material and the second
A tantalum oxide film containing silicon oxide as a first non-linear resistance layer 5 provided on the side wall of the display electrode 6 isolated from the signal electrode 3 having a two-layer structure of the electrode material of FIG. An aluminum oxide film containing tantalum oxide, which is the non-linear resistance layer 13 of FIG.
Is provided on the upper surface of the nonlinear resistance layer 13. Further, an upper electrode 9 overlapping the signal electrode 3 and the display electrode 6 is formed,
The non-linear resistance elements 31 and 32 are formed. As described above, two nonlinear resistance elements 31 and 32 connected in series to the side wall of the signal electrode unit 20 and the side wall of the display electrode 6 can be formed.

In the above embodiment, the second substrate 2
An example in which the present invention is applied to the case where the counter electrode 15 is provided on the second substrate has been described. However, a case where a black matrix which is a light shielding portion is provided on the second substrate or a case where a color filter is provided on the second substrate In this case, the effect of the present invention is naturally effective.

In the above embodiment, the example in which the surface of the third nonlinear resistance layer is roughened is used in the third embodiment. However, the second embodiment having the third nonlinear resistance layer is naturally effective. is there. Further, although the configuration in which the non-linear resistance element is connected to the signal electrode is used, the effect of the present invention is naturally effective even when the configuration is used in connection with the data electrode.

[0108]

The electrode on the substrate side constituting the nonlinear resistance element has a two-layer structure of a lower electrode and an intermediate electrode. A first non-linear resistance layer made of a real oxide film of the lower electrode is provided on the side wall of the lower electrode. In addition, a second non-linear resistance layer made of a real oxide film of the intermediate electrode is provided on the side wall and the upper surface of the intermediate electrode. By utilizing this structure, the first nonlinear resistance layer and the second nonlinear resistance layer are satisfactorily joined at the interface between the lower electrode and the intermediate electrode, and the film quality of the first nonlinear resistance layer or the second nonlinear resistance layer is improved. The film quality of the resistance layer does not deteriorate. Further, the area of the first non-linear resistance layer can be controlled with very high reproducibility, the uniformity of the voltage-current characteristics of the non-linear resistance element can be improved, and the display quality of the liquid crystal display device can be improved.

Further, the width of the lower electrode is made larger than the width of the intermediate electrode, the junction between the first nonlinear resistance layer and the second nonlinear resistance layer is relaxed, and the covering property of the upper electrode is improved, so that the nonlinear resistance is improved. The uniformity of the voltage-current characteristics of the device can be further improved, and the yield can be improved by reducing the probability of disconnection of the upper electrode.

Further, a third non-linear resistance layer is formed on the upper surface of the second non-linear resistance layer.
Is formed, when the resistance difference between the second nonlinear resistance layer and the first nonlinear resistance layer is small, the voltage of the nonlinear resistance element due to the overlapping area of the second nonlinear resistance layer and the upper electrode is reduced. The occurrence of a distribution of current characteristics can be prevented or suppressed.

Further, the signal electrode, the display electrode, and the connection portion are integrally formed, an intermediate electrode is formed on each electrode, and a first nonlinear resistance layer and a second nonlinear resistance layer are formed on the side wall portions of each electrode. Provided on the top surface, further remove the connection portion from the substrate,
By providing an isolated signal electrode and a display electrode and an upper electrode overlapping and connecting the signal electrode and the display electrode, a substrate having a non-linear resistance element for a reflective liquid crystal display device can be easily formed. Can be.

Further, by providing unevenness on the surface of the third non-linear resistance layer, it is possible to stabilize the characteristics of the non-linear resistance element and at the same time improve the light diffusivity, so that a bright liquid crystal display device can be obtained. Becomes

[Brief description of the drawings]

FIG. 1 is a diagram showing a planar structure of a liquid crystal display device according to a first embodiment of the present invention.

FIG. 2 is a diagram illustrating a cross-sectional structure of the liquid crystal display device according to the first embodiment of the present invention.

FIG. 3 is a graph showing voltage-current characteristics of the nonlinear resistance element of the present invention and the nonlinear resistance element shown in the conventional example.

FIG. 4 is a diagram illustrating a planar structure of a liquid crystal display device according to a second embodiment of the present invention.

FIG. 5 is a diagram illustrating a cross-sectional structure of a liquid crystal display device according to a second embodiment of the present invention.

FIG. 6 is a diagram illustrating a planar structure of a liquid crystal display device according to a third embodiment of the present invention.

FIG. 7 is a diagram illustrating a cross-sectional structure of a liquid crystal display device according to a third embodiment of the present invention.

FIG. 8 is a diagram showing another cross-sectional structure of the liquid crystal display device according to the third embodiment of the present invention.

FIG. 9 is a diagram illustrating a manufacturing process of the liquid crystal display device according to the first embodiment of the present invention.

FIG. 10 is a diagram illustrating a manufacturing process of the liquid crystal display device according to the first embodiment of the present invention.

FIG. 11 is a diagram illustrating a manufacturing process of the liquid crystal display device according to the second embodiment of the present invention.

FIG. 12 is a diagram illustrating a manufacturing process of the liquid crystal display device according to the second embodiment of the present invention.

FIG. 13 is a diagram illustrating a manufacturing process of the liquid crystal display device according to the second embodiment of the present invention.

FIG. 14 is a diagram illustrating a manufacturing process of the liquid crystal display device according to the third embodiment of the present invention.

FIG. 15 is a diagram illustrating a manufacturing process of the liquid crystal display device according to the third embodiment of the present invention.

FIG. 16 is a diagram illustrating a manufacturing process of the liquid crystal display device according to the third embodiment of the present invention.

FIG. 17 is a diagram illustrating a manufacturing process of the liquid crystal display device according to the third embodiment of the present invention.

FIG. 18 is a diagram showing a planar structure of a liquid crystal display device in a conventional example.

FIG. 19 is a diagram showing a cross-sectional structure of a liquid crystal display device in a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 1st substrate 3 signal electrode 4 lower electrode 5 1st nonlinear resistance layer 6 display electrode 9 upper electrode 11 nonlinear resistance element 12 intermediate electrode 13 2nd nonlinear resistance layer 15 counter electrode 16 orientation film 17 liquid crystal 22 second Substrate 25 Deflector 27 Third nonlinear resistance layer

Claims (14)

[Claims] 1. A substrate having a signal electrode or data electrode, a display electrode constituting a liquid crystal pixel, a non-linear resistance element in a portion where the signal electrode or data electrode overlaps, and a counter electrode facing the liquid crystal through a liquid crystal. In a liquid crystal display device which performs display by applying a drive signal to a signal electrode and a data electrode, a non-linear resistance element is provided on the lower electrode made of a first metal film connected to the signal electrode or the data electrode and on the lower electrode. A first non-linear resistance layer provided on the side wall of the intermediate electrode and the lower electrode made of the second metal film, a second non-linear resistance layer provided on the side wall of the intermediate electrode and the upper part, and a first non-linear resistance layer on the lower electrode And an upper electrode overlapping the second nonlinear resistance layer. The upper electrode is connected to the display electrode, and the second nonlinear resistance layer has a higher resistance than the first nonlinear resistance layer. Liquid crystal display device. 2. A signal electrode or data electrode on a substrate, a display electrode forming a liquid crystal pixel, a non-linear resistance element in a portion where the signal electrode or data electrode overlaps, and a counter electrode facing the liquid crystal through a liquid crystal. In a liquid crystal display device which performs display by applying a drive signal to a signal electrode and a data electrode, a non-linear resistance element is provided on the lower electrode made of a first metal film connected to the signal electrode or the data electrode and on the lower electrode. A first nonlinear resistance layer provided on the side wall of the intermediate electrode and the lower electrode made of the second metal film, a second nonlinear resistance layer provided on the side wall and the upper part of the intermediate electrode,
A third non-linear resistance layer provided above the non-linear resistance layer, and an upper electrode overlapping the first non-linear resistance layer, the second non-linear resistance layer, and the third non-linear resistance layer on the lower electrode, Further, the upper electrode is connected to the display electrode, and the second or third non-linear resistance layer has a higher resistance than the first non-linear resistance layer. 3. A signal electrode or data electrode on a substrate, a display electrode constituting a liquid crystal pixel, a non-linear resistance element at a portion where the signal electrode or data electrode overlaps, and a counter electrode facing the liquid crystal via a liquid crystal. In a liquid crystal display device that performs display by applying a drive signal to a signal electrode and a data electrode, the non-linear resistance element has a part of a signal electrode or a data electrode made of a first electrode material as a lower electrode, and further includes a first electrode. A first non-linear resistance layer provided on a side wall of the lower electrode, comprising a part of the display electrode made of an electrode material as a lower electrode, and an intermediate electrode made of a second metal film provided on the two lower electrodes; And a second non-linear resistance layer provided on the side wall and the upper part of the intermediate electrode. The first non-linear resistance layer and the second non-linear resistance layer on the lower electrode provided on the signal electrode and the display electrode overlap each other. A liquid crystal display device having upper electrodes that are connected to each other and that are connected to each other, wherein the second nonlinear resistance layer has a higher resistance than the first nonlinear resistance layer. 4. A signal electrode or data electrode and a display electrode forming a liquid crystal pixel on a substrate, and a non-linear resistance element at a portion where the signal electrode or data electrode overlaps, and a counter electrode facing the liquid crystal via a liquid crystal. In a liquid crystal display device that performs display by applying a drive signal to a signal electrode and a data electrode, the non-linear resistance element has a part of a signal electrode or a data electrode made of a first electrode material as a lower electrode, and further includes a first electrode. A part of the display electrode made of an electrode material is used as a lower electrode, an intermediate electrode made of a second metal film provided on the lower electrode, a first nonlinear resistance layer provided on a side wall of the lower electrode, and a side wall of the intermediate electrode. A second nonlinear resistance layer provided on the upper side and a third nonlinear resistance layer provided on the second nonlinear resistance layer, wherein each of the nonlinear resistance layers on the lower electrode of the signal electrode and the display electrode is provided. A liquid crystal display device having an upper electrode overlapping with and interconnecting with each other, wherein the second nonlinear resistance layer or the third nonlinear resistance layer has a higher resistance than the first nonlinear resistance layer. 5. The liquid crystal display device according to claim 1, wherein the lower electrode and the intermediate electrode constituting the non-linear resistance layer have a wider width than the intermediate electrode. 6. The first metal film and the second metal film constituting the nonlinear resistance layer, the first metal film is wider than the second metal film, and the second metal film is formed of the third metal film. 5. The liquid crystal display device according to claim 2, wherein the width of the liquid crystal display device is wider than the width of the non-linear resistance layer. 7. The semiconductor device according to claim 1, wherein said first nonlinear resistance layer comprises an anodized film of a first electrode, and said second nonlinear resistance layer comprises an anodized film of a second electrode. , 3
Or the liquid crystal display device according to 4. 8. The method according to claim 1, wherein the second electrode is a metal film containing at least metal and silicon.
6. The liquid crystal display device according to 2, 3, 4, or 5. 9. A step of forming a first metal film provided on a first substrate having an insulating property, a step of forming a second metal film on the first metal film, and a step of forming a second metal film And a lower electrode made of the first metal film and a signal electrode formed integrally with the lower electrode are patterned, a lower electrode made of the first metal film and a signal electrode are formed, and a second metal film is formed on the lower electrode. Forming an intermediate electrode composed of a self-aligned electrode, forming a first nonlinear resistance layer on the side wall of the lower electrode, and anodizing the second nonlinear resistance layer on the side wall and the upper layer of the intermediate electrode. Forming by a processing method, patterning an upper electrode on the first nonlinear resistance layer and the second nonlinear resistance layer on the lower electrode, and patterning a display electrode connected to the upper electrode. A method for manufacturing a liquid crystal display device, comprising: 10. A step of forming a first metal film provided on a first substrate having an insulating property, and a step of forming a second metal film on the first metal film.
Forming a second metal film and forming a lower electrode made of the second metal film and the first metal film and a signal electrode formed integrally with the lower electrode, and forming a lower electrode made of the first metal film and a signal. Forming an electrode, forming an intermediate electrode made of a second metal film on the lower electrode in a self-aligning manner, forming a first nonlinear resistance layer on a side wall of the lower electrode, and forming a side wall of the intermediate electrode. Forming a second non-linear resistance layer on the upper and lower portions by an anodic oxidation method, forming a photosensitive resin on at least the lower electrode and around the lower electrode by a printing method or a spin coating method, Performing a back surface exposure using a lower electrode or a signal electrode as a mask; and forming a pattern of an upper electrode on the first nonlinear resistance layer, the second nonlinear resistance layer, and the photosensitive resin on the lower electrode,
Forming a pattern of a display electrode connected to the upper electrode. 11. A step of forming a first metal film provided on a first substrate having an insulating property, and a step of forming a second metal film on the first metal film.
Forming a metal film, and forming a pattern of a lower electrode made of a second metal film and a first metal film, a connection portion integrally formed with the lower electrode, and a first signal electrode formed integrally with the connection portion. Forming a connection portion between the lower electrode made of the first metal film and the first signal electrode, and forming an intermediate electrode made of the second metal film on the lower electrode in a self-aligning manner; A step of forming a first non-linear resistance layer on the side wall, a step of forming a second non-linear resistance layer on the side wall and the upper part of the intermediate electrode by an anodic oxidation method, and a step of forming on the first signal electrode A second signal electrode, a first non-linear resistance layer on the lower electrode, a second signal electrode provided on the second non-linear resistance layer, a signal electrode upper electrode integrally formed with the second signal electrode, and a first signal electrode on the lower electrode. Display provided on the second non-linear resistance layer and the second non-linear resistance layer and further connected to the display electrode A step of simultaneously patterning the upper electrode for electrode, a step of patterning the display electrode, and a step of removing a connecting portion connecting the lower electrode and the first signal electrode to form an island-shaped lower electrode. A method for manufacturing a liquid crystal display device, comprising: 12. A step of forming a first metal film provided on a first substrate having an insulating property, and a step of forming a second metal film on the first metal film.
Forming a metal film, and forming a pattern of a lower electrode made of a second metal film and a first metal film, a connection portion integrally formed with the lower electrode, and a first signal electrode formed integrally with the connection portion. Forming a connection portion between the lower electrode made of the first metal film and the first signal electrode, and forming an intermediate electrode made of the second metal film on the lower electrode in a self-aligning manner; A step of forming a first non-linear resistance layer on the side wall, a step of forming a second non-linear resistance layer on the side wall and the upper part of the intermediate electrode by an anodic oxidation method, and a method of forming a photosensitive layer on and around the lower electrode. A step of forming a resin by a printing method or a spin coating method, a step of exposing the photosensitive resin to a back surface using a lower electrode or a signal electrode as a mask, and a second signal electrode provided on the first signal electrode; A first non-linear resistance layer on the lower electrode An upper electrode for a signal electrode integrally formed with a second nonlinear resistance layer and a second signal electrode provided on a photosensitive resin; a first nonlinear resistance layer and a second nonlinear resistance layer on the lower electrode; A step of simultaneously patterning an upper electrode for a display electrode provided on a resin and further connecting to a display electrode; a step of patterning a display electrode; Forming a lower electrode. 13. A step of forming a first metal film provided on a first substrate having an insulating property, and a step of forming a second metal film on the first metal film.
Forming a second metal film, a signal electrode formed of the first metal film and a display electrode, and forming a signal electrode formed of the first metal film, the display electrode and the signal electrode. A step of forming an intermediate electrode made of a second metal film on the display electrode in a self-aligned manner with the first electrode, a step of forming a first nonlinear resistance layer on a side wall of the lower electrode, and a side wall of the intermediate electrode Forming a second non-linear resistance layer on the first electrode and the second non-linear resistance layer on the signal electrode, and similarly on the display electrode on the display electrode. Forming a pattern of an upper electrode provided on the first non-linear resistance layer and on the second non-linear resistance layer. 14. A step of forming a first metal film provided on a first substrate having an insulating property, and a step of forming a second metal film on the first metal film.
Forming a second metal film, a signal electrode and a display electrode made of a second metal film and a first metal film, and forming a signal electrode and a display electrode made of the first metal film on the signal electrode. Forming an intermediate electrode made of a second metal film on the display electrode in a self-aligning manner; forming a first non-linear resistance layer on a side wall of the lower electrode; Forming a second non-linear resistance layer on the portion by an anodizing treatment method, forming a photosensitive resin on at least the signal electrode and a part of the display electrode and the periphery thereof by a printing method or a spin coating method, A step of exposing a photosensitive resin to the back surface using the signal electrode and the display electrode as a mask, and on the first nonlinear resistance layer and the second nonlinear resistance layer on the signal electrode, on the photosensitive resin, and on the display electrode. First nonlinear resistance layer and second nonlinear resistance layer Method of manufacturing a liquid crystal display device characterized by a step of patterning the upper electrode on the photosensitive resin and the anti-layers.