JPH08179379A - Liquid crystal display device and its production - Google Patents

Abstract

PURPOSE: To lessen the change in characteristic of nonlinear resistance element and to prevent an image burning phenomen so that good image quality is obtd. by having a counter electrode to be disposed on a second substrate and liquid crystal to be sealed between a first substrate and a second substrate and providing the side wall part of this first electrode with an insulating film. CONSTITUTION: The first substrate 1 is provided thereon with the first electrode 2 consisting of a tantalum film, and the side wall part 3 of the first electrode 2 is provided with the insulating film 4 consisting of silicon nitride. The front surface part of the first electrode 2 is provided with a nonlinear resistance layer 5 consisting of tantalum oxide film. Further, the nonlinear resistance layer 5 and the insulating film 4 disposed on the side wall part 3 of the first electrode 2 are provided thereon with the second electrode 6 consisting of an indium tin oxide film as a transparent conductive film. The nonlinear resistance element 8 of a MIM structure is formed by the first electrode 2, the nonlinear resistance layer 5 and the second electrode 6. Then, this nonlinear resistance element 8 is formed by using only the front surface part of the first electrode 2 and, therefore, the change in its current-voltage characteristics is lessened.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION The present invention has a first substrate having a first electrode and a second electrode, and a first non-linear resistance layer provided between the first electrode and the second electrode. A non-linear resistance element having a metal-insulating film-metal structure to which the anodic oxide film, the silicon oxide film, the silicon nitride film, the silicon carbide film, the tantalum oxide film, or the aluminum oxide film of the first electrode is applied (hereinafter The present invention relates to a configuration of a liquid crystal display device having an MIM element) and a manufacturing method thereof.

[0002]

2. Description of the Related Art In recent years, the display capacity of a liquid crystal display device using a liquid crystal panel has been increasing.

In a system using a multiplex drive for a liquid crystal display device having a simple matrix structure, the contrast is lowered or the response speed is lowered as the time division is increased, and when there are about 200 scanning lines. ,
It becomes difficult to obtain sufficient contrast.

Therefore, in order to eliminate such a defect, an active matrix type liquid crystal display panel in which a switching element is provided in each pixel is adopted.

The active matrix type liquid crystal display panel is roughly classified into a three-terminal system using thin film transistors and a two-terminal system using non-linear resistance elements. Of these, the two-terminal system is superior in that the structure and manufacturing method are simple.

For the two-terminal system, diode type, varistor type, MIM type, etc. have been developed.

Among them, the MIM type is characterized by its simple structure and short manufacturing process.

Further, the liquid crystal display panel is required to have high density and high definition, and it is necessary to reduce the area occupied by the switching elements.

Photolithography technology and etching technology, which are semiconductor manufacturing technologies, are available as a means for miniaturization. However, it is a very difficult technique to perform fine processing in a large area and to realize low cost.

Here, a MIM element structure which can be miniaturized in a large area and which is effective for cost reduction will be described with reference to the drawings.

FIG. 46 is a plan view showing the structure of a liquid crystal display device using a non-linear resistance element. Further, FIG. 47 corresponds to FIG.
6 is a cross-sectional view showing a cross section taken along line AA in the plan view of FIG. The prior art in the MIM element structure will be described below by alternately using FIGS. 46 and 47.

A first electrode 82 is provided on the first substrate 81, and a nonlinear resistance layer 83 is provided on the first electrode 82.

Further, the second electrode 84 is connected to the nonlinear resistance layer 83.
It is provided so that it overlaps on top. Then, the nonlinear resistance element 80 including the first electrode 82, the nonlinear resistance layer 83, and the second electrode 84 is configured. In addition, this second
Part of the electrode 84 also serves as the display electrode 85.

The second substrate 86 is provided with a black matrix 87 indicated by diagonal lines 61 in order to prevent light from leaking through the gaps between the display electrodes 85 provided on the first substrate 81.

Further, a display electrode 85 is formed on the second substrate 86.
The counter electrode 89 is provided via the insulating film 88 so as not to come into contact with the black matrix 87 and short circuit.

A first electrode 82 provided on a first substrate 81
Provides an overhanging region for providing the non-linear resistance element 80. Then, this protruding region overlaps with the second electrode 84 to form the nonlinear resistance element 80.

Furthermore, as shown in the plan view of FIG. 39, the first electrode 82 and the display electrode 85 have a gap of a predetermined dimension.

The display electrode 85 becomes a display pixel portion of a liquid crystal display panel by arranging it so as to overlap the counter electrode 89 with the liquid crystal 91 interposed therebetween.

The black matrix 87 is a display electrode 85.
It is provided so as to extend to the region where the light is formed, and has a role of preventing leakage of light from the region of the peripheral portion of the display electrode 85.

Then, the liquid crystal display device displays a predetermined image according to the change in the transmittance of the liquid crystal in the region between the display electrode 85 and the counter electrode 89 where the black matrix 87 is not formed.

Further, the first substrate 81 and the second substrate 86 are provided with alignment films 90 and 90 respectively as processing layers for regularly aligning the molecules of the liquid crystal 91.

Further, a spacer 92 makes the first substrate 81 and the second substrate 86 face each other with a predetermined gap size, and between the first substrate 81 and the second substrate 86,
The liquid crystal 91 is enclosed.

[0023]

By the way, some of the non-linear resistance elements 80 exhibit an asymmetrical change depending on the polarity of the applied voltage. In addition, even if the liquid crystal display device has a symmetrical characteristic, the characteristic may change by using a non-linear resistance element in a liquid crystal display device.

An example of the characteristics of a non-linear resistance element that exhibits an asymmetrical change depending on the polarity of the applied voltage will be described below with reference to the drawings.

FIG. 48 shows a tantalum (Ta) film as the first electrode 82 and a tantalum oxide (T) film as the nonlinear resistance layer 83.
₃ is a graph showing voltage-current characteristics of a non-linear resistance element using an a ₂ O ₅ ) film and an indium tin oxide (ITO) film that is a transparent conductive film as the second electrode 84.

In the graph of FIG. 48, the curve L shows the initial characteristics of the nonlinear resistance element. On the other hand, the curve M is
The characteristics after driving the non-linear resistance element are shown.

In the curve M showing the initial characteristics, when a positive voltage is applied to the first electrode of the non-linear resistance element, the same voltage should be applied to the non-linear resistance element as compared with the curve L showing the characteristics after driving. The current value that can be reduced is greatly reduced.

In the curve M showing the initial characteristics, when a negative voltage is applied to the first electrode of the nonlinear resistance element, the same voltage as the curve L showing the characteristics after driving can be applied to the nonlinear resistance element. The current value decreases.

Here, the difference between the curve L showing the initial characteristic when a positive voltage is applied to the first electrode and the curve M showing the characteristic after driving is indicated by P, and similarly, the first The difference between the curve L showing the initial characteristics when a negative voltage is applied to the electrode and the curve M showing the characteristics after driving is indicated by Q.

As is apparent from the graph of FIG. 48, the differences P and Q are different when the positive voltage is applied to the first electrode than the difference Q when the negative voltage is applied to the first electrode. P is extremely large.

Further, FIG. 49 shows changes in the differences P and Q described with reference to the graph of FIG. 48 depending on the driving time.

The curve R shows the change of the difference P with the driving time when a positive voltage is applied to the first electrode, and the current value sharply rises with the driving time.

On the other hand, the curve S shows the change in the difference Q with the driving time when a negative voltage is applied to the first electrode, and the current value gradually increases as the driving time increases. There is.

This state can be shown by a difference U between the curve R and the curve S, and the difference U rapidly increases with the driving time.

This difference U changes depending on the amount of current flowing through the non-linear resistance element, the environment in which the non-linear resistance element is driven, and the history of the non-linear resistance element, in addition to the driving time.

Therefore, it is extremely difficult to compensate for the change in the difference U.

Due to the occurrence of this difference U, the voltage applied to the liquid crystal pixel is different when a positive voltage is applied to the first electrode of the nonlinear resistance element and when a negative voltage is applied.

As a result, the image flickering phenomenon due to flicker and the image sticking phenomenon, which is an afterimage phenomenon due to the bias of the ions in the liquid crystal, occur and the display quality of the liquid crystal display device is significantly deteriorated.

This asymmetrical change in the current-voltage characteristic causes a difference depending on the region forming the non-linear resistance element.
The details will be described below.

As shown in FIG. 47, the non-linear resistance layer 83 provided on the first electrode 82 is composed of the upper surface portion and the side wall portion of the first electrode 82, and the non-linear resistance element 80 includes the first electrode 82. It is configured by utilizing the non-linear resistance layer 83 on the upper surface portion and the side wall portion of 82.

The asymmetrical change of the current-voltage characteristic is different between the upper surface portion and the side wall portion of the first electrode 82, and the change in the side wall portion is larger than that in the upper surface portion. This situation will be described with reference to the graph of FIG.

FIG. 50 is a graph showing the magnitude of the asymmetric current-voltage characteristic of the non-linear resistance element 80 when the ratio of the upper surface portion and the side wall portion of the first electrode 82 is changed. Figure 50
Graph shows the element area A of the non-linear resistance element on the horizontal axis,
The vertical axis shows the difference U in current-voltage characteristic change due to the polarity of the nonlinear resistance element.

In FIG. 50, the curve V indicates the first electrode 8
2 shows a change in the difference U when the area of the side wall portion 2 is constant, the area of the upper surface portion is changed, and the area A of the nonlinear resistance element is changed. Similarly, a curve W shows a change in the difference U when the area of the upper surface portion is constant, the area of the side wall portion is changed, and the area A of the nonlinear resistance element is changed.

As is apparent from the graph of FIG. 50, the curve W is greatly changed by the increase of the area A of the nonlinear resistance element as compared with the curve V.

This means that the difference U is the nonlinear resistance element 8
Compared to the upper surface portion of the first electrode 82 forming 0, the change in the current-voltage characteristics of the side wall portion is very large.

Further, even in the non-linear resistance element having symmetry, the first electrode 8 constituting the non-linear resistance element 80 is formed.
2, the magnitude of the change in the current-voltage characteristic differs depending on the ratio of the upper surface portion and the side wall portion.

When the ratio of the side wall portion of the first electrode 82 increases, the current-voltage characteristic change increases and the reproducibility of the intended display content deteriorates.

The object of the present invention is to suppress the asymmetrical characteristic change due to the difference in polarity of the above-mentioned non-linear resistance element, reduce the direct current application to the liquid crystal, eliminate the deterioration of the quality of the liquid crystal, decrease the contrast and flicker phenomenon. It is an object of the present invention to provide a structure of a liquid crystal display device having good image quality by preventing the image sticking phenomenon and a manufacturing method thereof.

Further, an object of the present invention is to provide a constitution of a liquid crystal display device having a good image quality by reducing a characteristic change of a non-linear resistance element having a symmetrical current-voltage characteristic and preventing an image sticking phenomenon. It is to be.

[0050]

In order to achieve the above object, the following means are adopted in the liquid crystal display device and the manufacturing method thereof according to the present invention.

The liquid crystal display device of the present invention includes a first electrode provided on the first substrate, a non-linear resistance layer provided on the upper surface of the first electrode, and a second electrode. A non-linear resistance element including a resistance layer and a second electrode is provided, and the non-linear resistance element is disposed between the signal electrode and the display electrode and is provided on the second substrate, the counter electrode, the first substrate and the first electrode. Liquid crystal to be sealed between the first substrate and the second substrate, and an insulating film is provided on a side wall portion of the first electrode.

The liquid crystal display device of the present invention comprises a first electrode provided on the first substrate, a nonlinear resistance layer provided on the upper surface of the first electrode, and a second electrode. A non-linear resistance element including a resistance layer and a second electrode is provided, and the non-linear resistance element is disposed between the signal electrode and the display electrode and is provided on the second substrate, the counter electrode, the first substrate and the first electrode. And a liquid crystal to be sealed between the two substrates, and the first electrode is embedded in a groove provided in the first substrate.

The liquid crystal display device of the present invention comprises a first electrode provided on the first substrate, a non-linear resistance layer provided on the upper surface of the first electrode, and a second electrode. A non-linear resistance element including a resistance layer and a second electrode is provided, and the non-linear resistance element is disposed between the signal electrode and the display electrode and is provided on the second substrate, the counter electrode, the first substrate and the first electrode. A liquid crystal to be sealed between the second substrate and an additional capacitor, which is composed of an auxiliary electrode, an insulating film for additional capacitance, and a display electrode, and is connected in parallel with the liquid crystal; the first electrode is in the opening of the insulating film for additional capacitance. And the insulating film for additional capacitance embedded in the first electrode and the insulating film for additional capacitance provided on the auxiliary electrode are made of the same material film.

In the liquid crystal display device of the present invention, the first electrode provided on the first substrate, the non-linear resistance layer and the second electrode provided on the upper surface of the first electrode, and the non-linear resistance element as the signal electrode are provided. The counter electrode is provided between the display electrode and the second substrate, and the liquid crystal is sealed between the first substrate and the second substrate. An insulating film made of a photosensitive resin film is provided, and a pixel electrode is made up of a non-linear resistance element consisting of a first electrode, a non-linear resistance layer and a wiring side electrode, a first electrode, a non-linear resistance layer and a display side electrode. And a non-linear resistance element.

The liquid crystal display device of the present invention comprises a first electrode provided on the first substrate, a non-linear resistance layer provided on the upper surface of the first electrode, and a second electrode, and the first electrode and the non-linear resistance are provided. A non-linear resistance element comprising a layer and a second electrode, the non-linear resistance element being disposed between the signal electrode and the display electrode,
A counter electrode provided on the substrate, and a liquid crystal sealed between the first substrate and the second substrate. The first electrode is embedded in the opening of the insulating film, and the first electrode is embedded in the insulating film. Is characterized in that each display electrode has a plurality of film thicknesses.

The method of manufacturing a liquid crystal display device of the present invention is the first
Patterning a metal film by a photolithography method and an etching method on the substrate to form a first electrode, a step of forming an insulating film on the first substrate, and a positive type light on the insulating film. A step of forming a photosensitive resin on the entire surface,
An exposure mask of a photosensitive resin is arranged on the back surface of the first substrate, and light is irradiated from the back surface of the first substrate, and the photosensitive resin is polymerized using the exposure mask and the first electrode as a mask. ,
Forming a photosensitive resin on the insulating film around the first electrode,
Patterning the insulating film by an etching method to form an insulating film around the first electrode; forming a nonlinear resistance layer on the upper surface of the first metal film; and forming a transparent conductive film on the entire surface, The method is characterized by including a step of patterning the transparent conductive film by a photolithography method and an etching method to form a second electrode and a display electrode.

The method of manufacturing the liquid crystal display device of the present invention is the first
Forming a groove on the first substrate by photolithography and etching on the first substrate, forming a metal film on the first substrate, and polishing the metal film surface to form the first groove on the first substrate.
Forming a non-linear resistance layer on the upper surface of the first electrode, forming a transparent conductive film, patterning the transparent conductive film by a photolithography method and an etching method, and And a step of forming a display electrode.

The method of manufacturing a liquid crystal display device of the present invention is the first
Patterning a metal film on the substrate by photolithography and etching to form a first electrode, forming a negative photosensitive resin over the entire surface, and forming a first type of the first substrate Light is irradiated from the back surface, the first electrode is used as a mask to polymerize the photosensitive resin, and an insulating film made of the photosensitive resin is formed in a region where the first electrode is not formed to form an opening of the photosensitive resin. A step of embedding a first electrode in the portion, a step of forming a non-linear resistance layer on the upper surface of the first metal film, a transparent conductive film is formed on the entire surface, and the transparent conductive film is patterned by photolithography and etching. And a step of forming a second electrode and a display electrode.

The method of manufacturing a liquid crystal display device of the present invention is the first
Patterning a metal film on the substrate by photolithography and etching to form a first electrode, forming a positive photoresist over the entire surface, and exposing the back surface of the first first substrate to light. Irradiation is performed, the first electrode is used as a mask, the positive photoresist is exposed, and development processing is performed to form the positive photoresist on the first electrode, and an insulating film is formed on the entire surface. Of the positive photoresist and the insulating film on the positive photoresist by removing the positive photoresist with a developer, and insulation on the upper surface of the first electrode formed so as to be embedded in the opening of the insulating film. A step of forming a film, a transparent conductive film is formed,
The method is characterized by including a step of patterning the transparent conductive film by a photolithography method and an etching method to form a second electrode and a display electrode.

The method of manufacturing a liquid crystal display device of the present invention is the first
Patterning the transparent conductive film on the substrate by photolithography and etching to form an auxiliary electrode, and forming a metal film on the first substrate by photolithography and etching on the first electrode. Process,
A step of forming a positive photoresist on the entire surface, a step of forming an insulating film for additional capacitance on the entire surface, a step of forming a negative photoresist on the entire surface, and performing light irradiation from the back surface of the first substrate, Using the first electrode as a mask, exposing the negative photoresist and developing it to form a negative photoresist on a portion other than on the first electrode; and using the negative photoresist as a mask, an insulating film for additional capacitance By an etching method, a step of forming a nonlinear resistance layer on the upper surface of the first electrode formed in the opening of the insulating film for additional capacitance, a transparent conductive film is formed on the entire surface, and a photolithography method is used. Patterning the transparent conductive film by an etching method to form a second electrode and a display electrode, and forming an additional capacitance from the auxiliary electrode, the insulating film for additional capacitance, and the display electrode. The features.

The method of manufacturing a liquid crystal display device of the present invention is the first
Forming a first electrode by patterning a metal film on the substrate by photolithography and etching, forming an insulating film on the entire surface, and forming a negative photoresist on the entire surface of the insulating film. And a light irradiation from the back surface of the first first substrate, exposing the negative photoresist using the first electrode as a mask, and developing the negative photoresist in the non-formation area of the first electrode. A step of forming a photoresist, a step of removing the insulating film on the first electrode by an etching method, a step of forming a positive photoresist on the entire surface, using an exposure mask, and forming a positive photoresist on a part of the insulating film. Forming a first opening in the positive photoresist, partially etching the insulating film in the first opening in the film thickness direction by an etching method, and using the exposure mask as a positive photoresist of Forming a second opening in the first portion, a step of partially etching the insulating film of the first opening and the second opening in the film thickness direction by an etching method, and a non-linear method on the upper surface of the first electrode. The method is characterized by including a step of forming a resistance layer, a step of forming a transparent conductive film, and patterning the transparent conductive film by a photolithography method and an etching method to form a second electrode and a display electrode.

[0062]

In the liquid crystal display device of the present invention, only the upper surface portion of the first electrode is used as the region forming the non-linear resistance element, and the side wall portion of the first electrode is not used.

Therefore, in the liquid crystal display device of the present invention, only the upper surface portion of the first electrode is used as the non-linear resistance element used in the liquid crystal display device. As a result, the change in the current-voltage characteristic of the non-linear resistance element can be made extremely small.

As a result, the current of the non-linear resistance element −
A desired voltage can be applied to the display electrode (liquid crystal) via the non-linear resistance element without changing the voltage characteristics.

Therefore, it is possible to reduce the image flickering phenomenon due to the flicker and the image sticking phenomenon which is the afterimage phenomenon due to the deviation of the ions in the liquid crystal, which are caused by the change of the current-voltage characteristics of the nonlinear resistance element. .

[0066]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The structure of a liquid crystal display device according to an embodiment of the present invention and a manufacturing method for obtaining this structure will be described below with reference to the drawings. First, the configuration of the liquid crystal display device according to the embodiment of the present invention will be described.

FIG. 1 is a plan view showing the structure of the liquid crystal display device according to the first embodiment of the present invention. FIG. 2 is a cross-sectional view showing a cross section taken along the line BB in the plan view of FIG. Hereinafter, the structure of the liquid crystal display device according to the first embodiment of the present invention will be described by alternately using FIG. 1 and FIG.

A first electrode 2 made of a tantalum (Ta) film is provided on the first substrate 1, and the first electrode 2 is further provided.
An insulating film 4 made of silicon nitride (SiNx) is provided on the side wall 3 of the.

A non-linear resistance layer 5 made of a tantalum oxide (Ta ₂ O ₅ ) film is provided on the upper surface of the first electrode 2.

Further, a second electrode 6 made of an indium tin oxide (ITO) film is provided as a transparent conductive film on the nonlinear resistance layer 5 and on the insulating film 4 provided on the side wall portion 3 of the first electrode 2.

The first electrode 2, the non-linear resistance layer 5 and the second
A non-linear resistance element 8 having a MIM structure is constituted by the electrode 6 of

As shown in the plan view of FIG. 1, a partial region of the second electrode 6 also serves as the display electrode 7.

Further, on the second substrate 9, chromium (Cr) shown by diagonal lines 61 is provided in order to prevent light from leaking from the gap between the display electrodes 7 provided on the first substrate 1.
A black matrix 10 made of a film is provided.

As shown in the plan view of FIG. 1, the black matrix 10 is not provided on the second substrate 9 in the region facing the display electrode 7.

Further, on the second substrate 9, the counter electrode 1 made of an indium tin oxide film so as to face the display electrode 7.
2 is provided. The counter electrode 12 is in contact with the black matrix 10 so as not to cause a short circuit.
Provided through.

Further, as shown in the plan view of FIG.
The electrode 2 and the display electrode 7 have a gap of a predetermined size in order to prevent both of them from being short-circuited.

The display electrode 7 becomes a display pixel portion of the liquid crystal display panel by arranging the display electrode 7 so as to overlap the counter electrode 12 with the liquid crystal 14 interposed therebetween.

In this display pixel portion, as shown in the plan view of FIG. 1, the black matrix 10 has openings. Then, the formation region of the black matrix 10 becomes a light-shielding portion.

The liquid crystal display device displays a predetermined image due to the change in the transmittance of the liquid crystal 14 in the display pixel portion.

Further, the first substrate 1 and the second substrate 9 are
As a treatment layer for regularly arranging the molecules of the liquid crystal 14,
Alignment films 13 and 13 are provided, respectively.

Furthermore, with the spacer 15,
The first substrate 1 and the second substrate 9 are opposed to each other with a predetermined gap, and a liquid crystal 14 is sealed between the first substrate 1 and the second substrate 9.

With the configuration of the liquid crystal display device according to the first embodiment of the present invention described above, the nonlinear resistance element 8 includes the first electrode 2 and the nonlinear resistance layer 5 provided on the upper surface of the first electrode 2. And the second electrode 6.

Since the insulating film 4 is provided on the side wall portion 3 of the first electrode 2, the resistance becomes sufficiently higher than that of the nonlinear resistance layer 5.

Therefore, the side wall portion 3 of the first electrode 2 is
Does not act as a non-linear resistance element. As described above, the non-linear resistance element 8 is provided with the non-linear resistance layer 5 on the upper surface of the first electrode 2.
It is configured only in the area in which is provided.

The change in the current-voltage characteristic, which is the element characteristic due to the driving of the non-linear resistance element when the first embodiment of the present invention is used, will be described with reference to the graphs of FIG. 3 and the graph of FIG. To do.

FIG. 3 is a graph showing characteristics in the conventional example.
Similar to the graph of, the current-voltage characteristics of the nonlinear resistance element at the initial stage and after the driving are shown.

As is apparent from the graph of FIG. 3, the current-voltage characteristics of the non-linear resistance element hardly change at the initial stage and after the drive by applying the configuration of the embodiment of the present invention.

The curve R shown in the graph of FIG. 4 is dependent on the drive time of the amount of change P in the current, which indicates the difference between the initial characteristics when a positive voltage is applied to the first electrode and the characteristics after driving. It is a curve showing sex. On the other hand, the curve S is a curve showing the dependence of the amount of change in current Q on the driving time, which shows the difference between the initial characteristics when a negative voltage is applied to the first electrode and the characteristics after driving. is there.

As shown in the graph of FIG. 4, the first electrode 2
The curve R showing the state in which a positive voltage is applied to the electrode only increases slightly with the driving time, and the curve S showing the state in which a negative voltage is applied to the first electrode changes with the driving time. , The amount of change is extremely small.

Furthermore, the difference U between the curve R and the curve S
However, even if the driving time is increased, it is reduced.

As described above, in the structure of the first embodiment of the present invention, the insulating film 4 is formed on the side wall portion 3 of the first electrode 2.
Is adopted.

This makes it possible to use only the upper surface of the first electrode 2 as the non-linear resistance layer 5,
It is possible to reduce an asymmetric change in the characteristics of the non-linear resistance element due to the difference in the polarity of the applied voltage of the drive voltage in the current-voltage characteristics.

Therefore, it is possible to reduce the change in the display quality in the driving state of the liquid crystal display device, the flicker phenomenon due to the application of the DC voltage to the liquid crystal, and the image sticking phenomenon.

Next, the structure of the liquid crystal display device according to the second embodiment of the present invention will be described with reference to the drawings.

FIG. 5 is a plan view showing a liquid crystal display device according to the second embodiment of the present invention. FIG. 6 shows CC of FIG.
It is sectional drawing which shows the cross section in a line. The configuration of the liquid crystal display device according to the second embodiment of the present invention will be described below by alternately using FIG. 5 and FIG.

The groove portion 20 is provided in the first substrate 1. Then, tantalum (T
a) The first electrode 2 made of a film is provided.

Further, the nonlinear resistance layer 5 is provided only on the upper surface of the first electrode 2, and the second electrode 6 is provided on the upper surfaces of the first substrate 1 and the nonlinear resistance layer 5.

That is, the non-linear resistance element 8 including the first electrode 2, the non-linear resistance layer 5 and the second electrode 6 has a structure such that it is embedded in the groove portion 20 provided in the first substrate 1.

Further, a partial region of the first electrode 2 becomes a signal electrode 21 for applying a signal of an external circuit to the display electrode 7 via the non-linear resistance element 8.

The signal electrode 21 is also formed on the first substrate 2
It is embedded in the groove portion 20 provided in the.

Further, a display electrode 7 made of an indium tin oxide (ITO) film is provided as a transparent conductive film so as to be embedded in the groove portion 20 provided in the first substrate 1.

Further, tantalum oxide (Ta ₂ O) provided by anodizing the first electrode 2 is provided on the first electrode 2.
₅ ) A non-linear resistance layer 5 made of a film is provided.

Further, a second electrode 6 made of a chromium (Cr) film is provided on the nonlinear resistance layer 5 and the display electrode 7.

The first electrode 2, the non-linear resistance layer 5 and the second
A non-linear resistance element 8 having a MIM structure is constituted by the electrode 6 of

A partial region of the second electrode 6 is electrically connected to the display electrode 7.

Furthermore, on the second substrate 9, the first substrate 1
In order to prevent light from leaking from the gap between the respective display electrodes 7 provided in the black matrix 10, the black matrix 10 shown by the diagonal lines 61 is provided. The black matrix 10 is composed of a chromium (Cr) film.

The black matrix 10 is not provided on the second substrate 9 in the region facing the display electrode 7.

Further, on the second substrate 9, the counter electrode 1 made of an indium tin oxide film so as to face the display electrode 7.
2 is provided. The counter electrode 12 is in contact with the black matrix 10 so as not to cause a short circuit.
It is provided through 1.

Further, the first electrode 2 and the display electrode 7 are
A gap having a predetermined size is provided in order to prevent the two from short-circuiting.

The display electrode 7 becomes a display pixel portion of the liquid crystal display panel by arranging the display electrode 7 so as to overlap the counter electrode 12 with the liquid crystal 14 interposed therebetween.

In this display pixel portion, as shown in the plan view of FIG. 5, the black matrix 10 has openings. Then, the formation region of the black matrix 10 becomes a light-shielding portion.

The liquid crystal display device displays a predetermined image due to the change in the transmittance of the liquid crystal 14 in the display pixel section.

Further, the first substrate 1 and the second substrate 9 are
As a treatment layer for regularly arranging the molecules of the liquid crystal 14,
Alignment films 13 and 13 are provided, respectively.

Furthermore, with the spacer 15,
The first substrate 1 and the second substrate 9 are opposed to each other with a predetermined gap, and a liquid crystal 14 is sealed between the first substrate 1 and the second substrate 9.

According to the configuration of the second embodiment of the present invention described above, the nonlinear resistance element 8 includes the first electrode 2, the nonlinear resistance layer 5 provided on the upper surface of the first electrode 2, and the second nonlinear resistance layer 5. Electrode 6 of.

That is, the first electrode 2 corresponds to the first substrate 1
It is designed to be embedded in the groove portion 20 provided in the. Therefore, only the region of the nonlinear resistance layer 3 provided on the upper surface of the first electrode 2 acts as the nonlinear resistance element 8.

As described above, in the liquid crystal display device according to the second embodiment of the present invention, the structure in which the first electrode 2 is embedded in the groove portion 20 provided in the first substrate 1 is adopted.

As a result, it is possible to use only the upper surface region of the first electrode 2 as the nonlinear resistance layer 5.

Therefore, the characteristic change of the asymmetric nonlinear resistance element due to the difference in the polarity of the applied voltage of the drive voltage in the current-voltage characteristic can be reduced.

Therefore, it is possible to reduce the change in the display quality due to the driving of the liquid crystal display device, the flicker phenomenon due to the application of the DC voltage to the liquid crystal, and the image sticking phenomenon.

Further, since the display electrode 7 is also embedded in the groove portion 20 provided in the first substrate 1, the display electrode 7 is formed.
It is possible to significantly reduce the level difference. For this,
The occurrence of disconnection of the second electrode 6 can be greatly reduced.

Therefore, it is possible to reduce defects of the non-linear resistance element in response to the size increase of the liquid crystal display device and the miniaturization of the element.

Next, the structure of the liquid crystal display device according to the third embodiment of the present invention will be described with reference to the drawings.

FIG. 7 is a plan view showing a liquid crystal display device according to the third embodiment of the present invention. FIG. 8 is a view of DD of FIG.
It is sectional drawing which shows the cross section in a line. The configuration of the liquid crystal display device according to the third embodiment of the present invention will be described below by alternately using FIG. 7 and FIG.

An auxiliary electrode 23 having an opening is provided on the first substrate 1. Further, a first electrode 2 made of a tantalum (Ta) film is provided on the first substrate 1.

Further, an additional capacitance insulating film 24 is provided on the upper surfaces of the first substrate 1 and the auxiliary electrode 23.

A partial region of the first electrode 2 is a first region for applying an external signal to the display electrode 7 via the non-linear resistance element 8.
Signal electrode 21 of.

Then, an opening is formed in the additional capacitance insulating film 24, and the first electrode 2 is embedded in the opening.

That is, in the third embodiment of the present invention, the first electrode 2 has a structure in which it is embedded in the opening of the additional capacitance insulating film 24.

Further, on the first electrode 2, tantalum oxide (Ta ₂ O ₂₎ provided by anodizing the first electrode 2 is provided.
₅ ) The non-linear resistance layer 5 made of a film is provided.

Further, the second electrode 6 made of a chromium (Cr) film is provided on the upper surface of the nonlinear resistance layer 5 and the upper surface of the display electrode 7 made of a transparent conductive film.

The first electrode 2, the non-linear resistance layer 5 and the second
A non-linear resistance element 8 having a MIM structure is constituted by the electrode 6 of

A partial region of the second electrode 6 is electrically connected to the display electrode 7.

Further, a second signal electrode 26 made of the same material film as the second electrode 6 is provided on the first signal electrode 21.

Further, the display electrode 7 which is partially electrically connected to the second electrode 6 and the third signal electrode 27 are provided on the second signal electrode 26.

That is, the signal electrode is the first signal electrode 25.
And the non-linear resistance layer 5, the second signal electrode 26, and the third signal electrode 27.

Further, the second substrate 9 is provided with chromium (Cr) indicated by diagonal lines 61 in order to prevent light leakage from the gaps between the respective display electrodes 7 provided on the first substrate 1.
A black matrix 10 made of a film is provided.

The black matrix 10 is not provided on the second substrate 9 in the region facing the display electrode 7.

Further, a counter electrode 12 made of an indium tin oxide film is provided on the second substrate 9 so as to face the display electrode 7.

The counter electrode 12 is in contact with the black matrix 10 so as not to cause a short circuit.
It is provided through 1.

Furthermore, the first electrode 2 and the display electrode 7 are
A gap having a predetermined size is provided in order to prevent the two from short-circuiting.

The display electrode 7 becomes a display pixel portion of the liquid crystal display panel by arranging it so as to overlap the counter electrode 12 with the liquid crystal 14 interposed therebetween.

In the display pixel section, as shown in FIG. 1, the black matrix 10 is provided with an opening. The area where the black matrix 10 is formed serves as a light shielding portion.

The change in the transmittance of the liquid crystal 14 in the display pixel section causes the liquid crystal display device to display a predetermined image.

Further, the first substrate 1 and the second substrate 9 are
As a treatment layer for regularly arranging the molecules of the liquid crystal 14,
Alignment films 13 and 13 are provided, respectively.

Furthermore, with the spacer 15,
The first substrate 1 and the second substrate 9 are opposed to each other with a predetermined gap, and a liquid crystal 14 is sealed between the first substrate 1 and the second substrate 9.

With the configuration of the third embodiment of the present invention described above, the nonlinear resistance element 8 includes the first electrode 2, the nonlinear resistance layer 5 provided on the upper surface of the first electrode 2, and the second nonlinear resistance layer 5. Electrode 6 of.

Then, the first electrode 2 is provided so as to be embedded in the opening of the additional capacitance insulating film 24. Therefore, only the non-linear resistance layer 3 region provided on the upper surface of the first electrode 2 acts as a non-linear resistance element.

Further, the auxiliary electrode 23 is connected to the counter electrode 12 outside the display area (not shown), and the auxiliary electrode 23 is connected.
And the additional capacitance 2 by the insulating film 24 for additional capacitance and the display electrode 7.
Make up 8. Therefore, the additional capacitance 28 is electrically connected in parallel with the liquid crystal capacitance forming the pixel of the liquid crystal 14.

Therefore, even when the liquid crystal capacitance is smaller than the capacitance of the non-linear resistance element 8, by providing the additional capacitance 28, the display performance of the liquid crystal display device can be optimized.

The additional capacitance insulating film 24 constituting the additional capacitance 28 is embedded with the first electrode 2 as described above, and the current path of the non-linear resistance element is limited to only the upper surface portion of the first electrode 2. I also use it.

As described above, the structure of the third embodiment of the present invention, that is, the first electrode 2 and the insulating film 24 for the additional capacitance are used.
By adopting the structure in which the groove 25 is embedded, it is possible to use only the upper surface of the first electrode 2 as the nonlinear resistance layer 5.

Therefore, the asymmetric current-voltage characteristic change due to the difference in the polarity of the applied voltage due to the driving time and the driving environment can be reduced.

Further, by using the additional capacitance insulating film 24, the auxiliary electrode 23 and the display electrode 7 as the additional capacitance 28, the amount of current flowing through the non-linear resistance element 8 at the time of displaying can be optimized. Therefore, it is possible to prevent the deterioration of the non-linear resistance element 8 due to the excessive current.

Therefore, it is possible to reduce the change in display quality due to the driving of the liquid crystal display device, the flicker phenomenon due to the application of the DC voltage to the liquid crystal, and the image sticking phenomenon.

Next, the structure of the liquid crystal display device according to the fourth embodiment of the present invention will be described with reference to the drawings.

FIG. 9 is a plan view showing a liquid crystal display device according to the fourth embodiment of the present invention. FIG. 10 shows E- of FIG.
It is sectional drawing which shows the cross section in an E line. Hereinafter, the fourth embodiment of the present invention will be described by alternately using FIGS. 9 and 10.

A first electrode 2 made of a tantalum (Ta) film having an island structure is provided on the first substrate 1. Further, a first wiring electrode 35 made of the same material as the first electrode 2 is provided.

Furthermore, the first electrode 2 and the first wiring electrode 3
5 has a disconnecting portion 41 as a portion to be initially connected and then disconnected.

On the side wall portion 31 of the first electrode 2 and the side wall portion 38 of the first wiring electrode 35, an insulating film 32 and an insulating film 37 made of a photosensitive resin are provided.

Further, a non-linear resistance layer 5 made of a tantalum oxide (Ta ₂ O ₅ ) film provided by anodizing the tantalum film is provided on the first electrode 2 and the first wiring electrode 35.

Further, a second wiring electrode 36 is provided on the first wiring electrode 35. Then, the second wiring electrode 36 is
The island-shaped first electrode 2 and the wiring-side electrode 3 on the nonlinear resistance layer 5
Connect to 3.

The first electrode 2, the non-linear resistance layer 5, and the wiring side electrode 33 constitute a first non-linear resistance element 39.

Further, the display electrode 7 is connected to the island-shaped first electrode 2 and the display-side electrode 34 on the nonlinear resistance layer 5.

The first electrode 2, the nonlinear resistance layer 5, and the display-side electrode 34 form a second nonlinear resistance element 40.

The first non-linear resistance element 39 and the second non-linear resistance element 40 have an electrically symmetrical structure when viewed from the island-shaped first electrode 2. Therefore, the current-voltage characteristics of the non-linear resistance element are symmetrical.

Further, a counter electrode 12 made of an indium tin oxide film is provided on the second substrate 9 so as to face the display electrode 7.

Further, the first electrode 2 and the display electrode 7 are
Since they do not short-circuit, they have a gap of a predetermined size.

The display electrode 7 becomes a display pixel portion of the liquid crystal display panel by arranging the display electrode 7 so as to overlap the counter electrode 12 with the liquid crystal 14 interposed therebetween.

The liquid crystal display device displays a predetermined image by changing the transmittance of the liquid crystal 14 in the display pixel portion.

Further, the first substrate 1 and the second substrate 9 are
As a treatment layer for regularly arranging the molecules of the liquid crystal 14,
Alignment films 13 and 13 are provided, respectively.

Furthermore, with the spacer 15,
The first substrate 1 and the second substrate 9 are opposed to each other with a predetermined gap, and a liquid crystal 14 is sealed between the first substrate 1 and the second substrate 9.

With the configuration of the fourth embodiment of the present invention described above, the first nonlinear resistance element 39 and the second nonlinear resistance element 40 are provided on the upper surface of the island-shaped first electrode 2. The non-linear resistance layer 5, the wiring side electrode 33, and the island-shaped first
The non-linear resistance layer 5 provided on the upper surface of the electrode 2 and the display-side electrode 34.

Then, on the side wall portion 31 of the first electrode 2,
An insulating film 32 made of a photosensitive resin is provided. Therefore, only the nonlinear resistance layer 3 provided on the upper surface of the first electrode 2 functions as a nonlinear resistance element.

As described above, the structure of the fourth embodiment of the present invention, that is, the structure in which the insulating film 32 made of a photosensitive resin is provided on the side wall portion 31 of the first electrode 2 is adopted. This makes it possible to use only the upper surface region of the first electrode 2 as the nonlinear resistance element.

Therefore, in the current-voltage characteristics of the non-linear resistance element, the change in the current-voltage characteristics due to the applied voltage of the drive voltage can be reduced.

Furthermore, a structure having a symmetry, that is, by connecting two nonlinear resistance elements of the first nonlinear resistance element 39 and the second nonlinear resistance element 40, a nonlinear resistance element having good symmetry can be obtained. Become.

Therefore, the non-linear resistance element has no asymmetric change in the current-voltage characteristic. Therefore, it is possible to reduce a change in display quality due to driving of the liquid crystal display device, a flicker phenomenon due to application of a DC voltage to the liquid crystal, and an image sticking phenomenon.

Next, the structure of the liquid crystal display device according to the fifth embodiment of the present invention will be described with reference to the drawings.

FIG. 11 is a plan view showing a liquid crystal display device according to the fifth embodiment of the present invention. FIG. 12 is a cross-sectional view showing a cross section taken along the line FF of FIG. Below, Figure 1
A fifth embodiment of the present invention will be described by alternately using 1 and FIG.

An insulating film 62 having an opening 65, an insulating film 63, and an insulating film 64 are provided on a first substrate 61, and the first electrode 2 is provided so as to be embedded in the opening 65.

Further, on the first electrode 2, tantalum oxide (Ta ₂ O ₂₎ provided by anodizing the first electrode 2 is provided.
₅ ) The non-linear resistance layer 5 made of a film is provided.

Further, the second electrode 6 made of a transparent conductive film is provided on the nonlinear resistance layer 5. Then, the display electrode 7 made of a transparent conductive film is provided on the second electrode 6, the insulating film 62, the insulating film 63, and the insulating film 64. Here, the second electrode 6 and the display electrode 7 are made of the same material.

The first electrode 2, the non-linear resistance layer 5 and the second
The non-linear resistance element 8 having the MIM structure is constituted by the electrode 6 of FIG.

The insulating film 6 provided under the display electrode 7
2, the insulating film 63, and the insulating film 64 have different film thicknesses, and the insulating film 62, the insulating film 63, and the insulating film 64 respectively utilize the refractive index and the film thickness of the display electrode 7 to form an interference filter. Configure.

Furthermore, the display electrode 7 is formed on the second substrate 69.
A counter electrode 12 made of a transparent conductive film is provided so as to face the above.

Further, the first electrode 2 and the display electrode 7 are
A gap having a predetermined size is provided in order to prevent the two from short-circuiting.

By arranging the display electrode 7 so as to overlap the counter electrode 12 with the liquid crystal 14 interposed therebetween, the display electrode 7 becomes a display pixel portion of the liquid crystal display panel.

In the periphery of this display pixel portion, as shown in FIG. 11, a black matrix is not provided for bright display.

The change in the transmittance of the liquid crystal 14 in the display pixel section causes the liquid crystal display device to display a predetermined image.

Further, the first substrate 61 and the second substrate 69 are provided with alignment films 13 and 13 respectively as processing layers for regularly aligning the molecules of the liquid crystal 14.

Furthermore, with the spacer 15,
The first substrate 61 and the second substrate 69 are opposed to each other with a predetermined gap, and the liquid crystal 14 is sealed between the first substrate 61 and the second substrate 69.

With the configuration of the fifth embodiment of the present invention described above, the nonlinear resistance element 8 is composed of the nonlinear resistance layer 5 and the second electrode 6 provided on the upper surface of the first electrode 2, and the first The electrode 2 is provided so as to be embedded in the opening 65 which is the opening of the insulating films 62, 63 and 64.

Therefore, only the upper surface region of the nonlinear resistance layer 5 provided on the upper surface of the first electrode 2 acts as the nonlinear resistance element 8.

As described above, the structure of the fifth embodiment of the present invention, that is, the first electrode 2 is formed on the insulating films 62, 63, and 6.
The structure is such that it is embedded in the fourth opening 65.
As a result, it is possible to use only the upper surface region of the first electrode 2 as the nonlinear resistance element 8.

Therefore, it is possible to reduce the asymmetric change in the characteristic of the non-linear resistance element due to the difference in the polarity of the applied voltage of the drive voltage in the current-voltage characteristic.

Therefore, it is possible to reduce the change in display quality due to the driving of the liquid crystal display device, the flicker phenomenon due to the application of the DC voltage to the liquid crystal, and the image sticking phenomenon.

Further, the insulating film 6 filling the first electrode 2
By changing the film thicknesses of 2, the insulating film 63, and the insulating film 64, it is possible to change the hue of the display color of the liquid crystal display device.

Next, a manufacturing method for forming the structure of the non-linear resistance element which constitutes the liquid crystal display device in the embodiment of the present invention will be described with reference to the drawings. 13 to 18
FIG. 4A is a cross-sectional view showing a method of manufacturing a nonlinear resistance element used in the liquid crystal display device of the present invention in the order of steps.

First, as shown in FIG. 13, a tantalum film having a thickness of 200 nm is formed as a material for the first electrode 2 on the first substrate 1 made of glass by using the vacuum sputtering method.

After that, the first electrode 2 is formed as a metal film made of a tantalum film by using the photolithography method and the reactive ion etching method.

For reactive ion etching treatment of this tantalum film, sulfur hexafluoride (SF) is used as an etching gas.
A mixed gas of ₆ ) and oxygen (O ₂ ) is used.

Further, a silicon nitride (Si ₃ N ₄ ) film is formed on the entire surface as a material for the insulating film 4 to a thickness of 200 nanometers by plasma chemical vapor deposition (plasma CVD method).

This silicon nitride film is formed by using silane (S
A mixed gas of iH ₄ ), ammonia (NH ₃ ) and hydrogen (H ₂ ) is used as a reaction gas.

Next, as shown in FIG. 14, the first substrate 1
And a negative photoresist 70 on the first electrode 2 and the first electrode 2.
It is formed to a film thickness of micrometer (μm) by a spin coating method.

After that, heat treatment is performed to pre-bak the negative photoresist 70. Then, from the back surface of the first substrate 1, a chromium film (Cr) is provided as a material for the light shielding film 74 on the third substrate 73, and the chromium film has an opening 75. The first electrode 2 and the first electrode 2 are used as an exposure mask to irradiate the opening 75 with ultraviolet light.

By the irradiation of ultraviolet light, the unexposed area 71 on the first electrode 2 and the area of the negative photoresist 70 in the area on the light shielding film 74 become the unexposed area.

Next, as shown in FIG. 15, the unexposed portion 71 on the first electrode 2 and the light-shielding film 7 are irradiated with the ultraviolet light.
The negative photoresist 70 in the region above 4 can be removed by a development process, and the negative photoresist 72 can be formed so as to remain in the peripheral portion of the first electrode 2.

Then, as shown in FIG. 16, the negative photoresist 72 is used as an etching mask to remove the unnecessary portion of the insulating film 4 made of the silicon nitride film by the reactive ion etching method.

In the reactive ion etching treatment of the insulating film 4 made of the silicon nitride film, carbon tetrafluoride (CF ₄ ), oxygen (O ₂ ) and argon (Ar) are used as reaction gases.
It is performed using a mixed gas of.

Next, as shown in FIG. 17, the first electrode 2
The non-linear resistance layer 5 is formed on the surface of the substrate by a wet anodic oxidation method.

In this anodizing process, since the side wall portion 3 of the first electrode 2 is covered with the insulating film 4, the nonlinear resistance layer 5 can be formed only on the surface of the first electrode 2. .

The anodic oxidation treatment for forming the non-linear resistance layer 5 is performed by using a 0.1% citric acid aqueous solution, and the non-linear resistance layer 5 is tantalum oxide having a film thickness of 70 nm. (Ta ₂ O ₅ ) is formed.

Next, as shown in FIG. 18, the first electrode 2
Then, an indium tin oxide (ITO) film having a film thickness of 100 nm is formed on the entire surface of the non-linear resistance layer 5 and the first substrate 1 by a sputtering method.

After that, the second electrode 6 and the display electrode 7 made of an ITO film which is a transparent conductive film are formed by using the photolithography method and the wet etching method. This I
The etching treatment of the TO film is performed using an etching solution composed of an aqueous solution of ferric chloride and hydrochloric acid.

Through the above manufacturing steps, the insulating film 4 made of a silicon nitride film is formed around the first electrode 2, and the anodic oxide film of the first electrode 2 formed on the first electrode 2 is formed. It is possible to form the non-linear resistance element 8 including the non-linear resistance layer 5 and the second electrode 6 formed on the non-linear resistance layer 5.

That is, the side wall region of the first electrode 2 can be covered with the insulating film 4 by the method of manufacturing the liquid crystal display device according to the embodiment of the present invention described with reference to FIGS. 13 to 18. This makes it possible to use only the upper surface region of the first electrode 2 as the nonlinear resistance layer 5.

Next, a manufacturing method for forming the structure of the non-linear resistance element constituting the liquid crystal display device according to another embodiment of the present invention will be described with reference to the drawings. 19 to 22 are cross-sectional views showing a method of manufacturing a nonlinear resistance element used in the liquid crystal display device of the present invention in the order of steps.

First, as shown in FIG. 19, a depth of 150 nm (n) is applied to the first substrate 1 made of glass.
The groove 20 of m) is formed by the photolithography method and the reactive ion etching method.

The reactive ion etching treatment of the glass which is the first substrate 1 uses a mixed gas of carbon tetrafluoride (CF ₄ ), oxygen (O ₂ ) and argon (Ar) as a reaction gas. To do.

Next, as shown in FIG. 20, the first substrate 1
A metal film made of a tantalum film as a first electrode 2 material is formed on the entire surface of the upper part and the groove part 20 to a thickness of 200 nm,
It is formed using a vacuum sputtering method.

Further, after the tantalum film is formed, the tantalum surface is polished by using an abrasive made of alumina to form the first electrode 2 and the signal electrode 21 so as to be embedded in the groove 20.

Next, as shown in FIG. 21, a non-linear resistance layer 5 is formed on the surfaces of the first electrode 2 and the signal electrode 21 which are formed so as to be embedded in the groove 20 by a wet anodic oxidation method. . This anodizing treatment is performed by using 0.1% citric acid aqueous solution to form tantalum oxide (Ta ₂ O ₅ ) having a film thickness of 70 nm as the nonlinear resistance layer 5.

Next, as shown in FIG. 22, the first electrode 2
Then, an indium tin oxide (ITO) film having a film thickness of 150 nm is formed on the entire surface of the non-linear resistance layer 5 and the first substrate 1 by a sputtering method. Then, the second electrode 6 and the display electrode 7 made of an ITO film which is a transparent conductive film are formed by using a photolithography method and a wet etching method. For the etching treatment of this ITO film, an etching solution composed of an aqueous solution of ferric chloride and hydrochloric acid is used.

Through the above manufacturing steps, the first electrode 2 is formed so as to be embedded in the groove portion 20 formed in the first substrate 1, and the anodic oxide film of the first electrode 2 formed on the first electrode 2 is formed. It is possible to form the non-linear resistance element 8 including the non-linear resistance layer 5 made of and the second electrode 6 formed on the non-linear resistance layer 5.

That is, the structure for burying the first electrode 2 in the groove portion 20 of the first substrate 1 is formed by the method of manufacturing a liquid crystal display device according to the embodiment of the present invention described with reference to FIGS. can do. This makes it possible to use only the upper surface region of the first electrode 2 as the nonlinear resistance layer 5.

Next, a method of manufacturing a nonlinear resistance element according to another embodiment of the present invention will be described with reference to the drawings. 23 to 27 are cross-sectional views showing a method of manufacturing the nonlinear resistance element used in the liquid crystal display device of the present invention in the order of steps.

First, as shown in FIG. 23, a tantalum film having a thickness of 150 nm is formed as a material for the first electrode 2 on the first substrate 1 made of glass by using the vacuum sputtering method.

After that, the first electrode 2 and the first signal electrode 21 made of a tantalum film as a metal film are formed by using the photolithography method and the reactive ion etching method.

In the reactive ion etching treatment of this tantalum film, sulfur hexafluoride (SF) is used as an etching gas.
A mixed gas of ₆ ) and oxygen (O ₂ ) is used.

Next, as shown in FIG. 24, the first substrate 1
Photosensitive resin 5 that undergoes a photochemical reaction by irradiating it with ultraviolet rays
1 is formed on the entire surface by spin coating.

After that, heat treatment is performed to make the photosensitive resin 51.
Is pre-baked. After that, ultraviolet light is irradiated from the back surface of the first substrate 1 using the first electrode 2 and the first signal electrode 21 as a mask.

By this irradiation of ultraviolet light, the first electrode 2
And the photosensitive resin 5 other than the region where the first signal electrode 21 is formed
Photochemical reaction treatment 1 is performed, and insoluble treatment of the photosensitive resin 51 is performed.

Next, as shown in FIG. 25, the first electrode 2
Then, the photosensitive resin 51 which is soluble without being irradiated with the ultraviolet rays on the upper surface of the first signal electrode 21 is removed by using a developing solution composed of an alkaline aqueous solution.

After that, heat treatment is performed to perform the main baking of the photosensitive resin 51 to convert the photosensitive resin 51 into an insulating film. As a result, the first electrode 2 and the first signal electrode 21 can be formed so as to be embedded in the opening 25 of the photosensitive resin 51.

Next, as shown in FIG. 26, the first portion is formed so as to be embedded in the opening 25 made of the photosensitive resin 51.
The non-linear resistance layer 5 is formed on the surfaces of the electrode 2 and the first signal electrode 21.

The non-linear resistance layer 5 is anodized with a 0.1% aqueous boric acid solution using a wet anodic oxidation method, and the non-linear resistance layer 5 is made of tantalum oxide (thickness: 70 nm). Ta ₂ O ₅ ) is formed.

Next, as shown in FIG. 27, the first electrode 2
On the upper surface of the non-linear resistance layer 5 and the photosensitive resin 51,
A chromium film (Cr) having a film thickness of 100 nm is formed by a sputtering method.

After that, the chromium film is patterned by using the photolithography method and the wet etching method, and the second electrode 6 and the nonlinear resistance layer 5 on the first signal electrode 21 are patterned.
The second signal electrode 26 is formed on the top and the photosensitive resin 51.

For the etching treatment of the chromium film, an etching solution of an aqueous solution of cerium ammonium nitrate and perchloric acid is used.

After that, an ITO film having a thickness of 100 nm is formed on the entire surface as a transparent conductive film by a sputtering method.

After that, a display electrode 7 made of an ITO film is formed by photolithography and wet etching so as to partially overlap the second electrode 6, and then the second electrode 6 is formed.
The third signal electrode 2 made of an ITO film on the signal electrode 26 of
7 and 7.

The etching treatment of this ITO film uses an aqueous solution of ferric chloride and hydrochloric acid as an etching solution.

By the manufacturing method described above, the first electrode 2 is formed so as to be embedded in the opening 25 formed in the photosensitive resin 51 on the first substrate 1, and is formed on the first electrode 2. Nonlinear resistance layer 5 made of oxide film of the first electrode 2
Then, the non-linear resistance element 8 including the second electrode 6 formed on the non-linear resistance layer 5 can be formed.

That is, according to the manufacturing process of the liquid crystal display device in the embodiment of the present invention described with reference to FIGS. 23 to 27, the first electrode 2 is connected to the opening 25 of the photosensitive resin 51.
The structure to be embedded inside is adopted. This makes it possible to use only the upper surface region of the first electrode 2 as the nonlinear resistance layer 5.

Next, a method of manufacturing a non-linear resistance element according to another embodiment of the present invention will be described with reference to the drawings. 28 to 33 are cross-sectional views showing a method of manufacturing the nonlinear resistance element used in the liquid crystal display device of the present invention in the order of steps.

First, as shown in FIG. 28, a metal film made of a tantalum film is formed as a material for the first electrode 2 on the first substrate 1 to a thickness of 150 nanometers by the vacuum sputtering method. .

After that, the tantalum film is patterned by the photolithography method and the reactive ion etching method to form the first electrode 2 and the first signal electrode 21.

For reactive ion etching of the tantalum film, sulfur hexafluoride (SF ₆ ) is used as an etching gas.
A mixed gas of oxygen and oxygen (O ₂ ) is used.

Next, as shown in FIG. 29, the first substrate 1
A positive photoresist 53 that undergoes a photochemical reaction by irradiation with ultraviolet rays is formed on the entire surface by spin coating.

After that, the positive photoresist 53 is pre-baked by heat treatment. After that, the first electrode 2 and the first signal electrode 21 are used as a mask to irradiate ultraviolet rays from the back surface of the first substrate 1.

By the irradiation of ultraviolet rays, the light irradiation area of the positive photoresist 53 becomes soluble in the developing solution.
That is, the positive photoresist 53 on the upper surfaces of the first electrode 2 and the second signal electrode 21 becomes insoluble in the developing solution.

After that, the positive type photoresist 53 is developed using a developing solution. As a result, as shown in FIG. 29, the positive photoresist 53 can be formed only on the upper surfaces of the first electrode 2 and the first signal electrode 21, respectively.

Next, as shown in FIG. 30, on the positive type photoresist 53 and the first substrate 1, a silicon nitride film (Si
_An insulating film 54 made of ₃ N ₄ ) is formed with a film thickness of 150 nm.

Note that this silicon nitride film is formed of nitrogen (N ₂ )
And a vacuum reactive sputtering method using a mixed gas of argon and argon (Ar).

Then, as shown in FIG. 31, a developing process is carried out in a developing solution for the positive photoresist 53. As a result, the positive photoresist 53 on the first electrode 2 and the signal electrode 21 is removed together with the insulating film 54 made of a silicon nitride film, so that the insulation on the first electrode 2 and the signal electrode 21 is insulated. The film 54 can be removed.

The first electrode 2 and the signal electrode 21 are shown in FIG.
As shown in FIG. 5, it can be formed so as to be embedded in the opening 55 of the insulating film 54 made of a silicon nitride film.

Next, as shown in FIG. 32, a non-linear resistance layer is formed on the surfaces of the first electrode 2 and the signal electrode 21 formed so as to be embedded in the opening 55 of the insulating film 54 by wet anodic oxidation. 5 is formed.

In this anodic oxidation treatment, anodic oxidation is performed with a 0.1% aqueous boric acid solution to form 70 nm nanometer tantalum oxide (Ta ₂ O ₅ ) as the nonlinear resistance layer 5.

Next, as shown in FIG. 33, the first electrode 2
100 on the upper nonlinear resistance layer 5 and the silicon nitride film 54.
The second electrode 6 made of a nanometer ITO film is formed by the sputtering method.

After that, the display electrode 7 made of an ITO film is formed by using the photolithography method and the wet etching method. The etching treatment of this ITO film uses a mixed aqueous solution of ferric chloride and hydrochloric acid.

By the manufacturing method described above, the first electrode 2 formed so as to be embedded in the groove 55 formed in the insulating film 54 made of the silicon nitride film on the first substrate 1, and the first electrode 2 on the first electrode 2 are formed. It is possible to obtain the non-linear resistance element 8 including the non-linear resistance layer 5 formed of the anodic oxide film of the first electrode 2 and the second electrode 6 formed on the non-linear resistance layer 5.

That is, by the manufacturing process of the liquid crystal display device in the embodiment of the present invention described with reference to FIGS. 28 to 33, the first electrode 2 is formed in the opening 55 of the insulating film 54 made of a silicon nitride film. The structure that embeds is adopted.

This makes it possible to use only the upper surface region of the first electrode 2 as the nonlinear resistance layer 5.

Next, a method of manufacturing a non-linear resistance element according to another embodiment of the present invention will be described with reference to the drawings. 34 to 40 are cross-sectional views showing, in the order of steps, a method for manufacturing a non-linear resistance element used in the liquid crystal display device of the present invention.

First, IT is used as a material for the auxiliary electrode 23 on the first substrate 1 which is an insulating and transparent substrate.
An O film is formed to a thickness of 100 nanometers using a vacuum sputtering method.

After that, as shown in FIG. 34, the auxiliary electrode 23 made of an ITO film is formed by the photolithography method and the wet etching method.

For the etching treatment of this ITO film, an aqueous solution of ferric chloride and hydrochloric acid is used as an etching solution.

Next, as the first electrode 2 material, a metal film made of a tantalum film is formed to a thickness of 150 nanometers (nm) by the vacuum sputtering method.

Thereafter, as shown in FIG. 35, the first electrode 2 and the first signal electrode 21 made of a tantalum film as a metal film are formed by using the photolithography method and the reactive ion etching method.

In the reactive ion etching treatment of this tantalum film, sulfur hexafluoride (SF
A mixed gas of ₆ ) and oxygen (O ₂ ) is used.

Next, a silicon nitride film is formed as the additional capacitance insulating film material 24 on the entire surface to a thickness of 2000 nanometers (nm) by the plasma CVD method.

Next, as shown in FIG. 36, a negative photoresist 81 is formed on the entire surface by spin coating.

After that, the first electrode 2 and the first signal electrode 2
1 is used as an exposure mask to irradiate ultraviolet rays from the back surface of the transparent substrate 1. Then, the negative photoresist 70 is exposed to expose the first electrode 2 and the first signal electrode 2 to each other.
The negative type photoresist 70 on the upper surface of the above-mentioned 1 is developed and removed.

Next, as shown in FIG. 37, using the negative photoresist 70 as an etching mask, the additional capacitance insulating film 24 in the removed region of the negative photoresist 70 is removed by etching using the reactive ion etching method. .

For the reactive etching treatment of the insulating film 24 for additional capacitance, carbon tetrafluoride (C
A mixed gas of F ₄ ) and oxygen (O ₂ ) is used.

Next, as shown in FIG. 38, an anodic oxidation treatment is performed to form the non-linear resistance layer 5 on the surfaces of the first electrode 2 and the first signal electrode 21.

The non-linear resistance layer 5 is anodized by using a wet anodic oxidation method with a 0.1% citric acid aqueous solution, and the non-linear resistance layer 5 has a thickness of 70 nm and is made of tantalum oxide (Ta). ₂ O ₅ ) is formed.

Next, a chromium film (Cr) having a film thickness of 50 nm is formed on the entire surface by a sputtering method.

After that, as shown in FIG. 39, the chromium film is patterned by using the photolithography method and the wet etching method, and the second electrode is formed on the non-linear resistance layer 5 and the additional capacitance insulating film 24. 6 is formed, and the second signal electrode 26 is formed on the first signal electrode.

The etching treatment of the chromium film uses an etching solution of an aqueous solution of cerium ammonium nitrate and perchloric acid.

Next, as shown in FIG. 40, an indium tin oxide (ITO) film having a film thickness of 100 nanometers (nm) is formed on the entire surface by a sputtering method as a transparent conductive film.

After that, a display electrode 7 made of an ITO film is formed by photolithography and wet etching so as to partially overlap the second electrode 6, and then the second electrode 6 is formed.
The third signal electrode 2 made of an ITO film on the signal electrode 26 of
Form 7.

The etching treatment of the ITO film uses an aqueous solution of ferric chloride and hydrochloric acid as an etching solution.

By the manufacturing method described above, the additional capacitance 28 can be formed by the auxiliary electrode 23, the additional capacitance insulating film 24, and the display electrode 7 on the first substrate 1.

That is, by the manufacturing process of the liquid crystal display device according to the embodiment of the present invention described with reference to FIGS. 34 to 40, the structure in which the first electrode 2 is embedded in the opening of the insulating film 24 for additional capacitance is adopted. are doing. This makes it possible to use only the upper surface region of the first electrode 2 as the nonlinear resistance layer 5.

Further, the additional capacitance 28 can be formed simultaneously by the additional capacitance insulating film 24, the auxiliary electrode 23, and the display electrode 7.

Next, a manufacturing method for forming the structure of the non-linear resistance element constituting the liquid crystal display device according to another embodiment of the present invention will be described with reference to the drawings. 41 to 45 are cross-sectional views showing a method of manufacturing a nonlinear resistance element used in the liquid crystal display device of the present invention in the order of steps.

First, as shown in FIG. 41, a tantalum film having a thickness of 200 nanometers (nm) is formed as a material of the first electrode 2 on the first substrate 1 made of glass by using the vacuum sputtering method. .

After that, the first electrode 2 made of a tantalum film as a metal film is formed by using the photolithography method and the reactive ion etching method.

For the reactive ion etching treatment of this tantalum film, sulfur hexafluoride (SF) is used as an etching gas.
A mixed gas of ₆ ) and oxygen (O ₂ ) is used.

Further, a tantalum oxide (Ta ₂ O ₅ ) film is formed on the entire surface as a material of the insulating film 62 to a thickness of 200 nanometers (nm) by the reactive sputtering method.

In this tantalum oxide film, tantalum oxide is used as a target, and the gas used is a mixed gas of argon (Ar) and oxygen (O ₂ ).

Next, a negative photoresist (not shown) is formed on the first substrate 1 and the first electrode 2 by a spin coating method to a film thickness of 1 micrometer (μm).

After that, heat treatment is performed, and the negative photoresist (not shown) is pre-baked. After that, from the back surface of the first substrate 1 with the first electrode 2 as an exposure mask,
Irradiate with ultraviolet rays.

Next, as shown in FIG. 42, a negative photoresist (not shown) on the first electrode 2 is removed by performing a developing process, and the insulating film 62 on the first electrode 2 is removed. Etching is performed using the reactive ion etching method to remove the insulating film 62 on the upper surface of the first electrode 2.

For the reactive ion etching treatment of the insulating film 2 made of this tantalum oxide film, a mixed gas of hexafluorocarbon (SF ₆ ) and oxygen (O ₂ ) is used as an etching gas.

Next, as shown in FIG. 43, the first substrate 1
Then, a positive type photoresist 78 is formed on the first electrode 2 and the insulating film 62 to a film thickness of 1.5 μm by a spin coating method.

After that, heat treatment is performed and the positive photoresist is pre-baked. As an exposure mask, an opening 79 of a light shielding film 74 made of a chromium film provided on the third substrate 73 is used, and ultraviolet rays are irradiated from above the exposure mask.

Next, the positive photoresist 78 in the area corresponding to the opening 79 of the exposure mask is developed by the developing process.
Are removed, and the insulating film 62 is partially etched in the thickness direction using the reactive ion etching method to control the film thickness of the first insulating film 64 for the first time.

Next, as shown in FIG. 44, the positive photoresist 7 in another region is formed by utilizing the opening of the exposure mask.
8 is irradiated with ultraviolet rays to form an opening in the positive photoresist 78. As a result, the positive photoresist 78 on the first insulating film 64 and the second insulating film 63 can be removed.

Next, as shown in FIG. 45, the film thickness control of the second insulating film is performed by the reactive ion etching process to form the first insulating film 64 and the second insulating film 63.

For the reactive ion etching treatment of the insulating film 62 made of this tantalum oxide film, a mixed gas of sulfur hexafluoride (SF ₆ ) and oxygen (O ₂ ) is used as an etching gas.

Next, the non-linear resistance layer 5 is formed on the surface of the first electrode 2 by a wet anodic oxidation method. This anodizing treatment is performed by using 0.1% citric acid aqueous solution to form tantalum oxide (Ta ₂ O ₅ ) having a film thickness of 70 nm as the nonlinear resistance layer 5.

Next, an indium tin oxide (ITO) film having a thickness of 150 nm is formed on the entire surface of the first electrode 2, the non-linear resistance layer 5 and the insulating film 62 by the sputtering method.

After that, the second electrode 6 and the display electrode 7 made of an ITO film which is a transparent conductive film are formed by using the photolithography method and the wet etching method. This I
The etching treatment of the TO film is performed using an etching solution composed of an aqueous solution of ferric chloride and hydrochloric acid.

Through the above manufacturing process, the insulating film 62 having a region of a tantalum oxide film and having a different film thickness is provided around the first electrode 2, and the first electrode formed on the first electrode 2 is formed. It is possible to form the non-linear resistance element 8 including the non-linear resistance layer 5 made of the second anodic oxide film and the second electrode 6 formed on the non-linear resistance layer 5.

That is, the structure for covering the first electrode 2 with the insulating film 62 can be formed by the method of manufacturing a liquid crystal display device according to the embodiment of the present invention described with reference to FIGS. 41 to 45. . This makes it possible to use only the upper surface region of the first electrode 2 as the nonlinear resistance layer 5.

Furthermore, by using the embodiment of the present invention, it is possible to form the insulating film 62, the insulating film 63, and the insulating film 64 having a plurality of film thicknesses in a part of the display electrode 7.

In the first to fifth embodiments of the present invention described above, the color filter is not provided on the second substrate 9, but the black matrix 10 and the insulating film 11 are provided between the black matrix 10 and the insulating film 11. Even if a color liquid crystal display device is provided with a color filter, the effects of the embodiments of the present invention described above can be obtained.

In the first to fifth embodiments of the present invention described above, the tantalum film is used as the first electrode 2. However, in addition to the tantalum film, a tantalum film containing nitrogen or a tantalum film containing nitrogen is used. A tantalum film containing phosphorus, or a tantalum film containing niobium can also be used.

Furthermore, as the first electrode 2, a low resistance material such as aluminum, copper or nickel, tantalum,
Alternatively, the effect of the present invention described above can be obtained by using a multilayer film including a film containing impurities in tantalum.

Further, in the above-described first to fifth embodiments of the present invention, the tantalum film is used as the first electrode 2 and the tantalum oxide film is used as the nonlinear resistance layer 5.

However, as the nonlinear resistance layer 5, a silicon oxide film, a silicon nitride film, or a silicon oxide containing impurities is provided on the tantalum oxide film, and a multilayer film of the tantalum oxide film and the above-mentioned film is formed. The effect of the present invention described above can be obtained by using the non-linear resistance layer.

Further, it is preferable that the film formed on the tantalum oxide film of the nonlinear resistance layer composed of the multilayer film is formed by using the plasma chemical vapor deposition method. As a result, a voltage is applied to the tantalum oxide film, and the breakdown voltage is improved, so that it is possible to prevent deterioration of the nonlinear resistance element.

Furthermore, by using the non-linear resistance layer composed of a multilayer film, it becomes possible to control the current-voltage characteristics of the non-linear resistance element. Therefore, it is possible to prevent the overcurrent from flowing to the non-linear resistance element and improve the characteristics of the liquid crystal display device.

[0317]

As is apparent from the above description, by using the structure of the liquid crystal display device of the present invention and the manufacturing method thereof, the current path of the non-linear resistance element can be limited,
Furthermore, it is possible to use only the region where the change in the element characteristic of the non-linear resistance element can be reduced in the current path.

Therefore, the change in the element characteristics of the non-linear resistance element can be reduced, the desired display can always be reproduced, and the deviation from the intended display due to the change in the non-linear resistance element can be prevented. A liquid crystal display device of extremely good quality can be obtained.

Furthermore, the asymmetrical change due to the polarity of the non-linear resistance element is suppressed, the direct current voltage application to the liquid crystal is reduced, the deterioration of the quality of the liquid crystal is eliminated, the contrast is reduced, the flicker phenomenon and the image sticking phenomenon which are the afterimage phenomenon are caused. And can be prevented. Therefore, the display quality of the liquid crystal display device can be improved. In particular, with regard to the burn-in phenomenon, it is possible to improve the characteristics to the extent that it is not inferior to the three-terminal system.

[Brief description of drawings]

FIG. 1 is a plan view showing a liquid crystal display device in an example of the present invention.

FIG. 2 is a cross-sectional view showing a liquid crystal display device in an example of the present invention.

FIG. 3 is a graph showing a relationship between an initial characteristic of a non-linear resistance element of a liquid crystal display device according to an example of the present invention, a current value of a characteristic after driving, and a light amount applied to the non-linear resistance element.

FIG. 4 is a graph showing a relationship between a characteristic of a non-linear resistance element and a driving time when the embodiment of the present invention is applied to the non-linear resistance element of the liquid crystal display device in the embodiment of the present invention.

FIG. 5 is a plan view showing a liquid crystal display device in an example of the present invention.

FIG. 6 is a cross-sectional view showing a liquid crystal display device in an example of the present invention.

FIG. 7 is a plan view showing a liquid crystal display device in an example of the present invention.

FIG. 8 is a cross-sectional view showing a liquid crystal display device in an example of the present invention.

FIG. 9 is a plan view showing a liquid crystal display device in an example of the present invention.

FIG. 10 is a cross-sectional view showing a liquid crystal display device in an example of the present invention.

FIG. 11 is a plan view showing a liquid crystal display device in an example of the present invention.

FIG. 12 is a cross-sectional view showing a liquid crystal display device in an example of the present invention.

FIG. 13 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 14 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 15 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 16 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 17 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 18 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 19 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device according to the example of the present invention.

FIG. 20 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 21 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 22 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 23 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 24 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 25 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 26 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 27 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 28 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 29 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 30 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 31 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 32 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 33 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 34 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 35 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 36 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 37 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 38 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 39 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 40 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 41 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 42 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 43 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 44 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 45 is a cross-sectional view showing the manufacturing process of the nonlinear resistance element of the liquid crystal display device in the example of the present invention.

FIG. 46 is a plan view showing a liquid crystal display device in a conventional example.

FIG. 47 is a cross-sectional view showing a liquid crystal display device in a conventional example.

FIG. 48 is a graph showing voltage-current characteristics in a non-linear resistance element of a liquid crystal display device.

FIG. 49 is a graph showing a relationship between a non-linear resistance element characteristic and a driving time of a liquid crystal display device in a conventional example.

FIG. 50 is a graph showing the relationship between the amount of change in the current-voltage characteristics of the non-linear resistance element and the current path of the non-linear resistance element in the conventional example.

[Explanation of symbols]

 1 First Substrate 2 First Electrode 3 Sidewall 4 Insulating Film 5 Nonlinear Resistance Layer 6 Second Electrode 7 Display Electrode 8 Nonlinear Resistance Element 9 Second Substrate

Claims (11)

[Claims] 1. A first electrode provided on a first substrate, a nonlinear resistance layer provided on an upper surface of the first electrode, and a second electrode, the first electrode, the nonlinear resistance layer, and the second electrode. A non-linear resistance element including an electrode, the non-linear resistance element is disposed between the signal electrode and the display electrode, and is provided between the counter electrode provided on the second substrate and the first substrate and the second substrate. And a liquid crystal to be sealed in, and an insulating film is provided on a side wall of the first electrode. 2. A first electrode provided on a first substrate, a nonlinear resistance layer provided on an upper surface of the first electrode, and a second electrode, the first electrode, the nonlinear resistance layer, and the second electrode. A non-linear resistance element including an electrode, the non-linear resistance element is disposed between the signal electrode and the display electrode, and is provided between the counter electrode provided on the second substrate and the first substrate and the second substrate. And a liquid crystal to be sealed in, and the first electrode is embedded in a groove provided in the first substrate. 3. A first electrode provided on a first substrate, a nonlinear resistance layer provided on an upper surface of the first electrode, and a second electrode, the first electrode, the nonlinear resistance layer, and the second electrode. A non-linear resistance element including an electrode, the non-linear resistance element is disposed between the signal electrode and the display electrode, and is provided between the counter electrode provided on the second substrate and the first substrate and the second substrate. A liquid crystal to be sealed in the second electrode, and an additional capacitor composed of an auxiliary electrode, an insulating film for additional capacitance, and a display electrode connected in parallel with the liquid crystal. The first electrode is provided in the opening of the insulating film for additional capacitance. A liquid crystal display device characterized in that the insulating film for additional capacitance embedded in the electrode and the insulating film for additional capacitance provided on the auxiliary electrode are made of the same material film. 4. A first electrode provided on a first substrate, a non-linear resistance layer provided on an upper surface of the first electrode, a second electrode, and a non-linear resistance element between a signal electrode and a display electrode. A counter electrode provided on the second substrate, and a liquid crystal sealed between the first substrate and the second substrate. The side wall of the first electrode is formed of a photosensitive resin film. A non-linear resistance element including a first electrode, a non-linear resistance layer, and a wiring-side electrode, and a non-linear resistance element including the first electrode, the non-linear resistance layer, and a display-side electrode. A liquid crystal display device having. 5. A first electrode provided on a first substrate, a nonlinear resistance layer provided on an upper surface of the first electrode, and a second electrode, the first electrode, the nonlinear resistance layer, and the second electrode. A non-linear resistance element including an electrode, the non-linear resistance element is disposed between the signal electrode and the display electrode, and is provided between the counter electrode provided on the second substrate and the first substrate and the second substrate. And a liquid crystal to be sealed in, the first electrode is embedded in the opening of the insulating film,
A liquid crystal display device, wherein the insulating film for embedding the first electrode has a plurality of film thicknesses for each display electrode. 6. A first film is formed by patterning a metal film on the first substrate by photolithography and etching.
The step of forming the electrodes, the step of forming the insulating film on the first substrate, the step of forming the positive photosensitive resin on the entire surface of the insulating film, and the step of forming the positive photosensitive resin on the back surface of the first substrate. A mask for exposure of a photosensitive resin is arranged, and light is irradiated from the back surface of the first substrate. The exposure mask and the first electrode are used as a mask to polymerize the photosensitive resin to insulate the periphery of the first electrode. A step of forming a photosensitive resin on the film, patterning the insulating film by an etching method, and forming the insulating film around the first electrode;
A step of forming a non-linear resistance layer on the upper surface of the first metal film,
A transparent conductive film is formed on the entire surface, and the transparent conductive film is patterned by a photolithography method and an etching method.
And a step of forming a display electrode, the method for manufacturing a liquid crystal display device. 7. A step of forming a groove on the first substrate by a photolithography method and an etching method, a metal film is formed on the first substrate, and the surface of the metal film is polished. A step of forming the first electrode in the groove so as to be embedded therein, a step of forming a nonlinear resistance layer on the upper surface of the first electrode, a transparent conductive film is formed, and the transparent conductive film is patterned by a photolithography method and an etching method. And a step of forming a second electrode and a display electrode, the method for manufacturing a liquid crystal display device. 8. A metal film is patterned on the first substrate by a photolithography method and an etching method to form a first film.
Forming the negative electrode, the step of forming the negative type photosensitive resin on the entire surface, and the light irradiation from the back surface of the first first substrate, and using the first electrode as a mask, the photosensitive resin Are polymerized to form an insulating film made of a photosensitive resin in a region where the first electrode is not formed, and the first electrode is embedded in the opening of the photosensitive resin, and an upper surface of the first metal film is formed. And a step of forming a non-linear resistance layer, forming a transparent conductive film on the entire surface, and patterning the transparent conductive film by a photolithography method and an etching method to form a second electrode and a display electrode. Method for manufacturing liquid crystal display device. 9. A first film is formed by patterning a metal film on the first substrate by photolithography and etching.
The step of forming the electrode of 1), the step of forming the positive photoresist on the entire surface, and the light irradiation from the back surface of the first first substrate, exposing the positive photoresist by masking the first electrode. Then, a development process is performed to form a positive photoresist on the first electrode, and an insulating film is formed on the entire surface.
A step of removing the positive photoresist with a developing solution to remove the positive photoresist and the insulating film on the positive photoresist, and a step of forming an upper surface of the first electrode to be embedded in the opening of the insulating film. A step of forming a non-linear resistance layer, a transparent conductive film is formed, and the transparent conductive film is patterned by a photolithography method and an etching method;
And a step of forming a display electrode, the method for manufacturing a liquid crystal display device. 10. A step of patterning a transparent conductive film on a first substrate by a photolithography method and an etching method to form an auxiliary electrode, and a step of forming a metal film on the first substrate by a photolithography method and an etching method. A step of forming a first electrode, a step of forming a positive photoresist on the entire surface, a step of forming an insulating film for additional capacitance on the entire surface, a step of forming a negative photoresist on the entire surface, A step of irradiating light from the back surface of the substrate, exposing the negative photoresist using the first electrode as a mask, and performing a development process to form the negative photoresist on a portion other than on the first electrode; A step of patterning the additional capacitance insulating film by etching using a photoresist as a mask, and a nonlinear resistance on the upper surface of the first electrode formed in the opening of the additional capacitance insulating film. A step of forming a layer, a transparent conductive film is formed on the entire surface, the transparent conductive film is patterned by a photolithography method and an etching method to form a second electrode and a display electrode, and an auxiliary electrode and an insulating film for additional capacitance are formed. And a step of forming an additional capacitance from the display electrode. 11. A step of patterning a metal film on a first substrate by a photolithography method and an etching method to form a first electrode, a step of forming an insulating film on the entire surface, and an entire surface of the insulating film. A step of forming a negative photoresist on the substrate, and light irradiation from the back surface of the first first substrate,
A step of exposing the negative type photoresist using the first electrode as an exposure mask and developing the negative type photoresist in a region where the first electrode is not formed, and an etching method on the first electrode. The step of removing the insulating film, and forming a positive photoresist on the entire surface, using an exposure mask,
A step of forming a first opening in a part of the positive photoresist on the insulating film; a step of partially etching the insulating film in the first opening in the film thickness direction by an etching method; A step of forming a second opening in a part of the positive photoresist using the same, and a step of partially etching the insulating film between the first opening and the second opening in the film thickness direction by an etching method And a step of forming a non-linear resistance layer on the upper surface of the first electrode, forming a transparent conductive film, and patterning the transparent conductive film by a photolithography method and an etching method to form a second electrode and a display electrode. A method of manufacturing a liquid crystal display device, comprising: