JPH0682831A - Active matrix liquid crystal display device and its production - Google Patents

Abstract

PURPOSE:To provide the active matrix liquid crystal display device which can improve the area of apertures contributing to display and the process for production of this display device. CONSTITUTION:A black matrix layer 2 is formed on a glass substrate 1 for a semiconductor element. A gate electrode 3, a gate insulating film 4, a semiconductor channel layer 5 and ohmic contact layers 6S, 6D are formed thereon; further, a display electrode 7, a source electrode 8, a drain electrode 9 and a passivation film 10 are formed. The gate insulating film 4, the display electrode 7 and the passivation film 10 are formed by using the black matrix layer 2 as a mask and patterning by back exposing from the rear surface of the substrate and, therefore, these layers eventually have a self-aligning property with each other and the formation of the aperture of the display electrode 7 to the wider area is possible. An upper electrode is formed via the insulating film 16 on the black matrix layer 2 in the part not shown in Fig. and a holding capacity element is formed by both electrodes.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an active matrix liquid crystal display device and a method for manufacturing the same.

[0002]

2. Description of the Related Art Liquid crystal display devices have been used in a wide range of applications as power-saving displays. A commonly used active matrix liquid crystal display device has two translucent substrates arranged to face each other, a liquid crystal is filled between the two substrates, and the filled liquid crystal is applied by a voltage applied between the two substrates. The optical characteristics of are controlled for each pixel. In a device that performs color display, a color filter layer in which a filter of a predetermined color is arranged for each pixel region and a transparent common electrode that is one electrode for applying a voltage are provided on a first substrate. It is formed. Further, on the second substrate, a display electrode serving as the other electrode for applying a voltage and a transistor element for controlling the voltage applied to the display electrode are formed in each pixel region, and By turning on / off the transistor element, the optical characteristics of the liquid crystal are controlled for each pixel.

[0003]

In the active matrix liquid crystal display device that performs color display, the color filter layer is formed on the first substrate as described above. This color filter layer has a predetermined color (for example, R: red,
(G: green, B: blue) filters are arranged for each pixel, and filters of different colors are arranged in adjacent pixels. Therefore, if only this color filter layer is used, the boundary region of pixels becomes unclear. Therefore, in order to make the boundary region of the pixel clear, the black matrix layer is formed so as to overlap the boundary portion of each filter of this color filter layer. The black matrix layer is made of a light-shielding material, and if the filter for each pixel is likened to a lens of spectacles, the black matrix layer corresponds to the edge of the spectacles.

As described above, since it is necessary to form the black matrix layer on the side of the first substrate, the conventional active matrix liquid crystal display device has a problem that a highly accurate alignment process is required at the time of manufacturing. That is, when the first substrate is arranged so as to face the second substrate,
The display electrodes formed on the second substrate side and the black matrix layer formed on the first substrate side must be accurately aligned. However, in reality,
It is impossible to perform accurate alignment without any error, and it is necessary to provide an overlapping portion which causes an overlap of about 5 μm as a margin for alignment error. Therefore, only this overlapping part,
There is a problem that the area of the opening that contributes to the actual display is reduced and the amount of light that can be transmitted is reduced.

Further, it is necessary to secure a storage capacitor in order to hold a state in which sufficient charge is accumulated in the display electrode for each pixel. However, in order to secure a storage capacitor having a certain amount of charge capacity, it is necessary to form a storage capacitor element that occupies a certain area, and only the area occupied by this storage capacitor element contributes to actual display. There is a problem that the area of the opening is further reduced.

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide an active matrix liquid crystal display device capable of increasing the area of an opening which contributes to display and a method for manufacturing the same.

[0007]

[Means for Solving the Problems]

(1) The first invention of the present application is to dispose translucent first and second substrates defining a plurality of pixels on a plane so as to face each other, and to fill a liquid crystal between the two substrates to form a first substrate. A color filter layer, in which a filter of a predetermined color is arranged for each pixel region, and a transparent common electrode which is one electrode for applying a voltage for controlling the optical characteristics of the liquid crystal are formed on the upper side, A display electrode, which is the other electrode for applying a voltage for controlling the optical characteristics of the liquid crystal, is formed in each pixel region on the second substrate, and a transistor for controlling the voltage applied to each display electrode. In an active matrix liquid crystal display device in which an element is formed for each pixel area and the optical characteristics of the filled liquid crystal can be controlled for each pixel, a boundary area of each pixel at the time of display on the second substrate side. Black mat for shading A Lix layer is formed, an upper electrode is formed on a part of the black matrix layer with an insulating film interposed therebetween, and a capacitive element is formed by a part of the black matrix layer and the upper electrode. It is adapted to be used as a storage capacitor element that holds the accumulated charges in the electrodes.

(2) A second invention of the present application is the method of manufacturing a liquid crystal display device according to the first invention, wherein a black matrix layer is formed when patterning a gate insulating film which is a constituent element of a transistor element. As a mask, back exposure is performed from the lower surface side of the second substrate.

(3) The third invention of the present application is the method of manufacturing a liquid crystal display device according to the first invention, wherein the black matrix layer is used as a mask when the second substrate is patterned. The back exposure is performed from the lower surface side of the.

(4) A fourth invention of the present application is the method of manufacturing a liquid crystal display device according to the first invention, wherein the black matrix layer is masked when patterning a passivation film which is a constituent element of a transistor element. As a result, back exposure is performed from the lower surface side of the second substrate.

(5) The fifth invention of the present application is the method for manufacturing a liquid crystal display device according to the first invention, wherein the surface layer of the black matrix layer is oxidized to form an oxide film, and the oxide film is used as a storage capacitor. It is intended to be used as an insulating film of an element.

[0012]

[Operation] A feature of the active matrix liquid crystal display device according to the present invention is that the black matrix layer is formed not on the first substrate side on which the filter is formed but on the second substrate side on which the transistor element is formed. However, the black matrix layer is used as one electrode of the storage capacitor element. The black matrix layer is structurally incorporated as a part of the constituent elements of the transistor element, and self-aligns the gate insulating film, the display electrode, the passivation film, etc. formed on the second substrate side with high precision. You will be able to do it consistently. Moreover, since the storage capacitor element is formed by utilizing the region of the black matrix layer, it is possible to secure the storage capacitor without reducing the area of the opening that contributes to the actual display.

[0013]

The present invention will be described below based on illustrated embodiments. FIG. 1 is a perspective view showing a basic structure of a general active matrix liquid crystal display device. The main components of this device are a glass substrate 100 for color filters and a glass substrate 200 for semiconductor elements. Both substrates have translucency, and a plurality of pixels are defined on their respective planes. In the example shown in FIG. 1, for convenience, 3 × 3
Although 9 pixels arranged in the above are defined, a larger number of pixels are actually defined. Both substrates are arranged so as to be parallel to each other, and the corresponding pixels are in a state of facing each other. Color filter glass substrate 10
A polarizing plate 110 is arranged on the upper surface of 0, and a polarizing plate 210 is arranged on the lower surface of the semiconductor element glass substrate 200. A color filter layer 120 and a common electrode 130 are formed on the lower surface of the color filter glass substrate 100. The color filter layer 120 is, in this embodiment,
Three color filters of R: red, G: green, B: blue are arranged for each pixel. The common electrode 130 is composed of one transparent electrode material. On the other hand, on the glass substrate 200 for semiconductor elements, the display electrode 2 is provided for each pixel.
20 and a transistor element 230 for controlling the potential of this display electrode are formed. In the transistor element 230, the gate electrode is the scanning line 240, the source electrode is the data line 250, and the drain electrode is the display electrode 220.
, Respectively.

FIG. 2 shows an equivalent circuit of one pixel of the liquid crystal display device shown in FIG. Color filter glass substrate 100
The liquid crystal is filled between the glass substrate 200 and the semiconductor element glass substrate 200, and the liquid crystal is filled between the display electrode 220 and the common electrode 130 in the circuit of FIG. In the circuit, the electrode pair sandwiching the liquid crystal forms a capacitive element C. Now, if the transistor element 230 is turned on by supplying a predetermined voltage to the scanning line 240, the potential of the display electrode 220 can be set to the same level as the potential of the data line 250, and the transistor element 230 is turned off. Then, the potential of the display electrode 220 can be maintained as it is. Thus, by controlling the voltage applied to the capacitive element C, the display electrode 220 and the common electrode 130 are controlled.
The optical characteristics of the liquid crystal sandwiched between and can be changed, and the optical characteristics of the liquid crystal can be controlled for each pixel. Therefore, in FIG. 1, transmission / non-transmission of white light emitted from below can be controlled in each pixel unit, and when observed from above in the drawing, emission / non-emission of each pixel unit can be controlled. it can.

By the way, in the circuit diagram of FIG. 2, when the transistor element 230 is turned off, the source-drain is not kept completely insulated, and the resistor element R having a relatively large resistance value is used. Is equivalent to. Therefore, even if the transistor element 230 is kept in the OFF state with the charge accumulated in the display electrode 220, the accumulated charge is gradually lost with the time characteristic determined by the time constant CR. For this reason, it is necessary to perform a refresh operation for re-accumulating charges at regular time intervals (for example, every 1/60 sec). Here, in order to reduce the frequency of the refresh operation, it is desirable to make the capacitance value of the capacitive element C as large as possible. Therefore, FIG.
As shown in the circuit diagram of 1., the holding capacitor element Cs is generally formed in parallel with the capacitor element C in order to hold the charge accumulated in the display electrode 220. However, since the area of the semiconductor element glass substrate 200 is limited, when such a storage capacitor element Cs is formed, the display electrode 22 is formed.
As described above, the area of 0 is reduced by that amount, the area of the opening that contributes to the actual display is reduced, and the display becomes dark.

Another factor that reduces the opening area is a black matrix layer alignment error.
Hereinafter, this factor will be described. The color filter layer 120 shown in FIG. 1 is configured by arranging filters of three colors of R, G, and B for each pixel, but in this state, the boundary area of each pixel becomes unclear. A black matrix layer is used to sharpen this boundary area. The black matrix layer is formed in a frame-like structure at the boundary of each color filter of the color filter layer 120 (not shown in FIG. 1). The structure of this black matrix layer can be clearly shown by a structural sectional view. FIG. 4 shows a structural cross-sectional view of a region of one pixel of a conventional general active matrix liquid crystal display device, and FIG. 5 shows a structural cross-sectional view of a region of one pixel of the active matrix liquid crystal display device according to the present invention. Indicates. The characteristic of the device of the present invention shown in FIG. 5 is that the black matrix layer 2 is formed on the glass substrate 1 side for semiconductor elements.

First, the structure of the conventional apparatus shown in FIG. 4 will be described. The main components of this device are a glass substrate 1 for a semiconductor element (corresponding to the substrate 200 in FIG. 1) and a glass substrate 11 for a color filter arranged above it (see FIG. 1).
Corresponding to the substrate 100 in FIG. In this apparatus, the black matrix layer 2 is formed on the color filter glass substrate 11 side. Glass substrate for semiconductor device 1
A gate electrode 3 made of a metal is formed in the upper transistor element formation region, and a semiconductor channel layer 5 made of amorphous silicon and an n-type impurity are doped on the gate electrode 3 made of a metal via a gate insulating film 4 made of SiNx. Ohmic contact layer 6S made of amorphous silicon,
6D is formed. A transparent display electrode 7 (corresponding to the display electrode 220 in FIG. 1) is formed on the right of the transistor element formation region. In the transistor element forming region, a source electrode 8 made of metal is further added.
And the drain electrode 9 is formed, and the passivation film 10 is formed on it. Ohmic contact layer 6
S and 6D are intermediate layers for ohmic electrical connection between the semiconductor channel layer 5 and the source electrode 8 or between the semiconductor channel layer 5 and the drain electrode 9. The voltage applied to the gate electrode 3 can control the semiconductor channel layer 5 to be conductive or non-conductive. The drain electrode 9 is the display electrode 7
Is connected to the source electrode 8 and charges supplied to the source electrode 8 are
It becomes possible to put in and take out the display electrode 7 through the semiconductor channel layer 5.

On the other hand, the black matrix layer 2 and the color filter layers 12, 13 are formed in a predetermined pattern on the lower surface of the color filter glass substrate 11 which is arranged above and facing the semiconductor element glass substrate 1. 1 is formed), and the common electrode 14 (corresponding to the common electrode 130 in FIG. 1) is formed on the lower surface thereof. Although the color filter layer 12 is an R (red) filter and the color filter layer 13 is a G (green) filter in FIG. 4,
This means that the color filter layer located in the illustrated area for one pixel is only the filter of this color, and in reality, as shown in the color filter layer 120 of FIG.
The R, G, and B filters are alternately arranged. Also,
The black matrix layer 2 forms a grid pattern that fills the boundary area of each filter.

Liquid crystal is filled between the semiconductor element glass substrate 1 and the color filter glass substrate 11. Now, consider the width d of the overlapping portion of the display electrode 7 and the black matrix layer 2. Theoretically, it is preferable to set the width d = 0. The smaller d is, the wider the opening area of the display electrode 7 becomes, and the brighter the display becomes. However, in reality, an alignment error occurs between the semiconductor element glass substrate 1 and the color filter glass substrate 11, and therefore, a width d must be provided with a margin corresponding to this error. Generally, it is set to about d = 5 μm. Therefore, the opening area of the display electrode 7 is reduced by the margin of this alignment error.

As described above, as a factor for reducing the opening area of the display electrode 7, a part of the area is occupied by the formation of the storage capacitor Cs, and it is necessary to secure a margin for the alignment error of the black matrix layer. That there is
It was explained that there are two points. In the liquid crystal display device according to the present invention, the black matrix layer 2 is formed on the semiconductor element glass substrate 1 side, and the black matrix layer 2 is used as one electrode of the storage capacitor element Cs. The above two factors can be suppressed. Hereinafter, the structure according to the present invention will be described with reference to FIG. In FIG. 5, the structure formed on the glass substrate 1 for a semiconductor element is basically the same as the structure shown in FIG. However, in the transistor element formation region, the black matrix layer 2 is formed on the semiconductor element glass substrate 1, and the gate electrode 3, the gate insulating film 4, and the semiconductor are formed on the black matrix layer 2 via the insulating film 16. Channel layer 5, ohmic contact layers 6S, 6D, source electrode 8, drain electrode 9,
Passivation films 10 are formed respectively.
So to speak, the entire transistor element is in a state in which the black matrix layer 2 has put the clogs on.
There is no hindrance to the operation of the transistor element. As will be described later, in the present invention, the black matrix layer 2 is used as one electrode of the storage capacitor element Cs, and is therefore made of a conductive material. on the other hand,
It is not necessary to form the original black matrix layer 2 on the color filter glass substrate 11 side. That is,
It is sufficient to form the color filter layers 12 and 13 on the lower surface of the color filter glass substrate 11 and further to form the common electrode 14. However, in this embodiment, another black matrix layer 15 is formed between the color filter layers 12 and 13. The black matrix layer 15 is provided for a purpose different from that of the black matrix layer 2 and is not essential. That is, the black matrix layer 2 is provided for the purpose of making the boundary region of each pixel clear, while the black matrix layer 15 is provided with the semiconductor channel layer 5 by shining light from the outside. 5 is provided to prevent deterioration. In short, the purpose is to shield the semiconductor channel layer 5 from external light. Therefore, since the black matrix layer 15 is not a component having a function directly related to the operation of the liquid crystal display device, it is not always necessary to provide it, but it is preferable to provide it in consideration of the life of the device.

Here, paying attention to the width d indicating the overlap margin between the black matrix layer 2 and the display electrode 7, the conventional device shown in FIG. 4 required about d = 5 μm, whereas the width shown in FIG. In the device of the invention, d = 0. That is, it is possible to eliminate one factor that reduces the opening of the display electrode 7. Such a structure is actually obtained by performing self-alignment by patterning using the black matrix layer 2 as a mask. Regarding the method of manufacturing the liquid crystal display device shown in FIG. , Will be described in detail later.

Next, the reason why the other factor of reducing the opening of the display electrode 7, that is, the factor of occupying a part of the area due to the formation of the storage capacitor Cs, can be suppressed. A plan view of main constituent elements formed on the upper surface of the glass substrate 1 for a semiconductor element shown in FIG. 5 is shown in a plan view of FIG. The structural cross-sectional view of FIG. 5 corresponds to the cross-section at the position of the cutting line AA ′ in FIG. Each closed region shown by a chain double-dashed line in FIG. 6 is a planar pattern of the display electrode 7 for each pixel. On the other hand, this display electrode 7
All the areas other than the area where the black matrix is formed are the areas where the black matrix layer 2 is formed. This is clearly shown in the plan view of FIG. FIG. 7 is a plan view in which only the display electrode 7 and the upper electrode 17 are extracted from the plan view of FIG. Here, the upper electrode 17 is, as described later,
One electrode of the storage capacitor element Cs is configured. In FIG. 7, the hatched area is the area where the black matrix layer 2 is formed, and the white area is the area where the display electrode 7 is formed. In this way, the black matrix layer 2 and the display electrode 7 have a planarly complementary pattern because
This is because the display electrode 7 is patterned by back exposure using the black matrix layer 2 as a mask, as described later. In the plan view of FIG. 7, the storage capacitor element Cs is composed of the electrode pair of the upper electrode 17 and the black matrix layer 2 (only the region of the hatched portion in the drawing that overlaps with the upper electrode 17 has a capacitance). Will contribute as an element). The point to be noted here is that the black matrix layer 2 and the display electrode 7 do not overlap with each other because they have complementary patterns. That is, the black matrix layer 2 that is an electrode for forming the storage capacitor element Cs does not shield the display electrode 7, and the display electrode 7
The opening is used without waste. FIG. 8 shows a structural cross-sectional view taken along the line BB ′ in FIGS. 6 and 7.
The black matrix layer 2 and the upper electrode 17 have a section D
In this case, a planar overlap occurs, and the storage capacitor element is formed with the insulating film 16 sandwiched therebetween.

Next, a method of manufacturing the element on the glass substrate for semiconductor element 1 shown in FIGS. 5 to 8 will be described with reference to the structural sectional views shown in FIG. The structural cross-sectional views in the following description are views showing the structural cross-section at the position of the cutting line AA ′ in FIGS. 6 and 7. First, as shown in FIG. 9, a light-shielding metal material (for example, T
a, Ti, Al) is deposited on the entire surface and patterned by a normal photolithography process to form the black matrix layer 2. As shown by hatching in FIG. 7, the black matrix layer 2 is a layer having a grid pattern that fills the boundary region of each pixel.
Then, as shown in FIG. 10, SiOx and SiN are formed on the entire surface.
A transparent insulating material such as x is deposited to form the insulating film 16.

Subsequently, a metal film for forming a gate electrode is deposited on the entire surface, and patterning is performed on this metal film by a normal photolithography process. As shown in FIG. To form. Furthermore, as shown in FIG. 12, an insulating layer 4a made of SiNx and an intrinsic semiconductor layer 5 made of amorphous silicon are further formed thereon.
Ohmic contact layer 6 doped with a and n type impurities
a is sequentially deposited by the plasma CVD method. In addition,
In order to improve the insulating properties of the insulating layer 4a, a material capable of anodizing the gate electrode 3 (for example, Ta, Ti, A
(for example, metal such as 1), plasma CVD
Before the deposition step by the method, a step of anodizing the upper layer of the gate electrode 3 is performed, and the anodic oxide film is replaced with the first insulating film,
The insulating layer 4a made of SiNx may be used as the second insulating film and the gate insulating film may be used as the composite insulating film.

After the structure shown in FIG. 12 is obtained, a positive resist is applied to the entire upper surface, and back exposure is performed from the lower surface side of the semiconductor element glass substrate 1 using the black matrix layer 2 as a mask. Then, when the resist is developed, only the shaded portion of the black matrix layer 2 remains. Therefore, when the remaining resist is used as a mask for etching, the gate insulating film 4, the intrinsic semiconductor layer 5b, and the ohmic contact layer 6b are obtained as shown in FIG. Each of these layers is a black matrix layer 2
Since it is a layer obtained by patterning using as a mask, the pattern has self-alignment with the black matrix layer 2. Further, the intrinsic semiconductor layer 5b and the ohmic contact layer 6b are patterned by a normal photolithography process, and the pattern shown in FIG.
As shown in, the semiconductor channel layer 5 and the ohmic contact layer 6c are obtained.

Subsequently, a transparent conductive film such as ITO (Indium Tin Oxide) is entirely deposited, a negative resist is applied on the entire upper surface, and the black matrix layer 2 is used as a mask to form the lower surface of the glass substrate 1 for semiconductor elements. The second back exposure from the side is performed. Then, when the resist is developed, only the shaded portion of the black matrix layer 2 is removed. Then, etching is performed by using the resist that remains without being removed as a mask to form the display electrode 7 as shown in FIG. The display electrode 7 has a pattern having self-alignment with the black matrix layer 2. As described above, the width d = 0 indicating the overlap margin between the display electrode 7 and the display electrode 7 has no overlap portion. .

Further, a metal layer is deposited on this, patterning is performed by a normal photolithography process, and as shown in FIG. 16, the source electrode 8 and the drain electrode 9 are formed.
To form. The metal used as the material of the source electrode 8 and the drain electrode 9 is an ohmic contact layer 6c (n ⁺
It is preferable to use a metal such as Cr or Ti that can form a silicide film with the amorphous silicon. For the purpose of stress relaxation and resistance reduction, the source electrode 8 and the drain electrode 9 have a multilayer structure (for example,
A two-layer structure in which the Cr layer is on the inside and the Al layer is on the outside) may be used. Simultaneously with the patterning of the source electrode 8 and the drain electrode 9, the upper electrode 17 shown in the sectional view of FIG. 8 (the section taken along the line BB ') is formed. At this stage, the storage capacitor element Cs is formed. Although it is necessary to perform wiring as shown in FIG. 3 for the storage capacitor element Cs, description of this wiring step is omitted here.

Next, the source electrode 8 and the drain electrode 9
17 is used as a mask to perform a dry etching method or the like to remove the central portion of the ohmic contact layer 6c.
The ohmic contact layer 6c as shown in FIG.
Separated into S and the drain side portion 6D. Finally, a passivation material such as SiNx is deposited on this, a positive type resist is applied to the entire upper surface, and the black matrix layer 2 is used as a mask to remove 3 from the lower surface side of the glass substrate 1 for semiconductor elements. Perform back exposure for the second time.
Then, when the resist is developed, only the shaded portions of the black matrix layer 2 and the drain electrode 9 remain. Therefore, if the remaining resist is used as a mask for etching, a passivation film 10 is obtained as shown in FIG. This passivation film 10 also
Since the layer is obtained by patterning using the black matrix layer 2 as a mask, the pattern has self-alignment with the black matrix layer 2.

Through the above steps, the element on the glass substrate 1 for semiconductor element of the liquid crystal display device shown in FIG. 5 can be formed.
The feature of the manufacturing process described above is that the black matrix layer 2
By performing back exposure using the mask as a mask, each layer is patterned. Since each layer thus patterned has self-alignment with the black matrix layer 2, no alignment error occurs. Therefore, it is possible to reduce the number of steps for performing highly accurate alignment processing using an expensive mask aligner or the like.

Finally, a modification of the above-mentioned manufacturing method will be described. In this modified example, as the black matrix layer 2, a metal material (for example, Ta, Ti, Al, etc.) capable of forming a transparent oxide film by an anodization method is used, and the surface layer of the black matrix layer 2 is anodized. As a result, an oxide film is formed and this oxide film is used as an insulating film. Specifically, as shown in FIG. 9, the black matrix layer 2 is formed on the upper surface of the glass substrate 1 for a semiconductor element.
After the formation of the insulating film, the insulating film 1 is formed on the entire surface by the above method.
6 was formed (FIG. 10), the surface layer of the black matrix layer 2 is oxidized by an anodic oxidation method to form a transparent anodic oxide film 18 as shown in FIG. In this anodic oxidation method, for example, when the black matrix layer 2 is made of Ta, a DC voltage may be applied while the substrate in the state shown in FIG. 9 is immersed in an aqueous citric acid solution. In the method described above,
As shown in FIG. 19, the insulating film 16 is formed on the entire surface, whereas in the method of this modified example, as shown in FIG.
Is different, but the other points are exactly the same. Therefore, in the device manufactured by the method of this modification, the cross section at the position of the cutting line AA ′ in FIGS. 6 and 7 is as shown in FIG. 20 instead of FIG.
The cross section at the position of the cutting line BB ′ is as shown in FIG. 21 instead of FIG. 8. Both are functionally the same, although there is a slight difference in the position of the insulating layer.

Although the present invention has been described above based on the illustrated embodiment, the present invention is not limited to this embodiment and can be implemented in various modes other than this. For example, in the above-mentioned embodiment, the glass substrate 1 is used as the substrate, but a substrate made of other translucent material may be used. Further, in order to prevent the semiconductor channel layer 5 from being etched when the central portion of the ohmic contact layer 6c shown in FIG. 16 is etched, an etching stopper layer is formed on the semiconductor channel layer 5. I don't care.

[0032]

As described above, in the semiconductor device according to the present invention, the black matrix layer is formed on the side of the substrate on which the transistor element is formed, and self-alignment is performed by back exposure using this black matrix layer as a mask. Since it is possible to form a transistor element having excellent properties and the black matrix layer is used as one electrode of the storage capacitor element, the area of the opening contributing to display can be improved.

[Brief description of drawings]

FIG. 1 is a perspective view showing a basic structure of a general active matrix liquid crystal display device.

2 is an equivalent circuit diagram of one pixel of the liquid crystal display device shown in FIG.

FIG. 3 is a circuit diagram in which a holding capacitor element Cs is added to the equivalent circuit shown in FIG.

FIG. 4 is a structural cross-sectional view of a region for one pixel of a conventional general active matrix liquid crystal display device.

5 is a structural cross-sectional view of a region corresponding to one pixel of the active matrix liquid crystal display device according to the present invention, showing a cross-section taken along the line AA ′ in the plan view of FIG.

6 is a plan view showing a planar pattern of main constituent elements formed on the upper surface of the glass substrate for a semiconductor element 1 shown in FIG. 5, and a cross-sectional view taken along the line AA ′ in FIG. , A cross-sectional view taken along the line BB 'is shown in FIG.
Each is shown.

7 is a display electrode 7 and an upper electrode 1 in the plan view of FIG.
It is a top view which extracted only the part of 7.

8 is a structural cross-sectional view of a region for one pixel of an active matrix liquid crystal display device according to the present invention, showing a cross-section at a position of a cutting line BB ′ in the plan view of FIG.

9 is a diagram showing a method of manufacturing the liquid crystal display device shown in FIG. 5, in which the black matrix layer 2 is formed on the upper surface of the glass substrate 1. FIG.
FIG. 3 is a structural cross-sectional view showing a state in which the is formed.

10 is a structural cross-sectional view showing a state in which an insulating film 16 is further formed in the state shown in FIG.

11 is a structural cross-sectional view showing a state in which a gate electrode 3 is further formed in the state shown in FIG.

FIG. 12 further shows SiNx in the state shown in FIG.
FIG. 3 is a structural cross-sectional view showing a state in which an insulating layer 4a made of, an intrinsic semiconductor layer 5a made of amorphous silicon, and an ohmic connection layer 6a containing an n-type impurity are sequentially deposited.

FIG. 13: In the state shown in FIG. 12, patterning is performed by back exposure using the black matrix layer 2 as a mask, and the gate insulating film 4 and the intrinsic semiconductor layer 5 are formed.
FIG. 6B is a structural cross-sectional view showing a state in which the ohmic connection layer 6b is obtained.

FIG. 14 is a structural cross-sectional view showing a state in which semiconductor channel layer 5 and ohmic contact layer 6c are obtained by further performing patterning in the state shown in FIG.

15 is a structural cross-sectional view showing a state where display electrodes 7 are obtained by performing patterning by back exposure using the black matrix layer 2 as a mask after depositing transparent electrodes in the state shown in FIG. .

16 is a structural cross-sectional view showing a state in which a source electrode 8 and a drain electrode 9 are further formed in the state shown in FIG.

17 is a structural cross-sectional view showing a state where the ohmic contact layer 6b is separated into 6S and 6D in the state shown in FIG.

18 is a structural cross-sectional view showing a state in which a passivation film 10 is further formed in the state shown in FIG.

FIG. 19 is a structural cross-sectional view showing a state where the surface layer of the black matrix layer 2 is oxidized by an anodizing method to form an anodized film 18 from the state shown in FIG. 9 in the manufacturing method according to the modified example of the present invention. is there.

20 is a structural cross-sectional view showing a cross-section of the apparatus obtained by the method of the modification example shown in FIG. 19 at the position of the cutting line AA ′ in the plan view of FIG. 6;

FIG. 21 is a structural cross-sectional view showing a cross section of the device obtained by the method of the modification example shown in FIG. 19 at the position of the cutting line BB ′ in the plan view of FIG. 6;

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Glass substrate for semiconductor elements 2 ... Black matrix layer 3 ... Gate electrode 4 ... Gate insulating film 5 ... Semiconductor channel layer (amorphous silicon) 5a ... Intrinsic semiconductor layer (n ⁺ amorphous silicon) 6a, 6b, 6S, 6D ... Ohmic Contact layer 7 ... Display electrode 8 ... Source electrode 9 ... Drain electrode 10 ... Passivation film 11 ... Color filter glass substrate 12, 13 ... Color filter layer 14 ... Common electrode 15 ... Black matrix layer 16 ... Insulating film 17 ... Upper electrode 18 Anodized film 100 ... Glass substrate for semiconductor element 110 ... Polarizing plate 120 ... Color filter layer 130 ... Common electrode 200 ... Glass substrate for semiconductor element 210 ... Polarizing plate 220 ... Display electrode 230 ... Transistor element 240 ... Scan line 250 ... Data Line Cs ... Retaining capacitance element

Claims (5)

[Claims] 1. A translucent first and second substrate having a plurality of pixels defined on a plane are arranged to face each other, and liquid crystal is filled between the two substrates. Forming a color filter layer in which a filter of a predetermined color is arranged in each pixel region and a transparent common electrode which is one electrode for applying a voltage for controlling the optical characteristics of the liquid crystal, A display electrode, which is the other electrode for applying a voltage for controlling the optical characteristics of the liquid crystal, is formed on each substrate in each pixel region, and a transistor element for controlling the voltage applied to each display electrode is formed. In an active matrix liquid crystal display device which is formed for each pixel area and in which the optical characteristics of the filled liquid crystal can be controlled for each pixel, the boundary area of each pixel is clearly displayed on the second substrate side when displaying. Shading bra for A matrix layer is formed, an upper electrode is formed on a portion of the black matrix layer with an insulating film sandwiched therebetween, and a capacitance element is formed by the portion of the black matrix layer and the upper electrode. An active matrix liquid crystal display device, characterized in that the element is used as a storage capacitor element for holding an accumulated charge in the display electrode. 2. The method of manufacturing a liquid crystal display device according to claim 1, wherein the black matrix layer is used as a mask when the gate insulating film which is a constituent element of the transistor element is patterned, and the lower surface side of the second substrate is used. Back exposure from the substrate is performed, and a method for manufacturing an active matrix liquid crystal display device. 3. The method of manufacturing a liquid crystal display device according to claim 1, wherein when patterning each display electrode, back exposure is performed from the lower surface side of the second substrate using the black matrix layer as a mask. A method for manufacturing an active matrix liquid crystal display device, characterized in that 4. The method of manufacturing a liquid crystal display device according to claim 1, wherein the black matrix layer is used as a mask from the lower surface side of the second substrate when patterning the passivation film which is a constituent element of the transistor element. Back exposure is performed, and a method for manufacturing an active matrix liquid crystal display device. 5. The method for manufacturing a liquid crystal display device according to claim 1, wherein the surface layer of the black matrix layer is oxidized to form an oxide film, and the oxide film is used as an insulating film of a storage capacitor element. A method for manufacturing an active matrix liquid crystal display device, comprising: