JPH1062809A - 投影露光方法 - Google Patents

投影露光方法

Info

Publication number
JPH1062809A
JPH1062809A JP8213414A JP21341496A JPH1062809A JP H1062809 A JPH1062809 A JP H1062809A JP 8213414 A JP8213414 A JP 8213414A JP 21341496 A JP21341496 A JP 21341496A JP H1062809 A JPH1062809 A JP H1062809A
Authority
JP
Japan
Prior art keywords
projection
substrate
pattern
projection exposure
reticle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8213414A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1062809A5 (enExample
Inventor
Makoto Tsuchiya
誠 土屋
Masami Seki
昌美 関
Kei Nara
圭 奈良
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP8213414A priority Critical patent/JPH1062809A/ja
Priority to KR1019970015622A priority patent/KR100468234B1/ko
Priority to US08/848,394 priority patent/US6204912B1/en
Publication of JPH1062809A publication Critical patent/JPH1062809A/ja
Publication of JPH1062809A5 publication Critical patent/JPH1062809A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Landscapes

  • Liquid Crystal (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP8213414A 1996-05-08 1996-08-13 投影露光方法 Pending JPH1062809A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8213414A JPH1062809A (ja) 1996-08-13 1996-08-13 投影露光方法
KR1019970015622A KR100468234B1 (ko) 1996-05-08 1997-04-25 노광방법,노광장치및디스크
US08/848,394 US6204912B1 (en) 1996-05-08 1997-05-08 Exposure method, exposure apparatus, and mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8213414A JPH1062809A (ja) 1996-08-13 1996-08-13 投影露光方法

Publications (2)

Publication Number Publication Date
JPH1062809A true JPH1062809A (ja) 1998-03-06
JPH1062809A5 JPH1062809A5 (enExample) 2004-08-19

Family

ID=16638842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8213414A Pending JPH1062809A (ja) 1996-05-08 1996-08-13 投影露光方法

Country Status (1)

Country Link
JP (1) JPH1062809A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6288772B1 (en) 1999-02-12 2001-09-11 Nikon Corporation Scanning exposure method and scanning type exposure apparatus
JP2005107504A (ja) * 2003-09-01 2005-04-21 Samsung Electronics Co Ltd 露光マスク、これを含む露光装置及びこれを利用した表示装置用表示板の製造方法
JP2008066728A (ja) * 2006-09-08 2008-03-21 Asml Netherlands Bv オーバーレイエラーを測定するための半導体デバイス、オーバーレイエラーを測定するための方法、リソグラフィ装置、およびデバイス製造方法
JP2019117404A (ja) * 2019-03-22 2019-07-18 株式会社ニコン 露光装置、並びにディスプレイ及びデバイスの製造方法
JP2019117403A (ja) * 2019-03-22 2019-07-18 株式会社ニコン 露光装置、並びにディスプレイ及びデバイスの製造方法
KR20200029485A (ko) 2017-07-25 2020-03-18 도판 인사츠 가부시키가이샤 노광 장치 및 노광 방법
CN111522204A (zh) * 2019-02-05 2020-08-11 东芝存储器株式会社 曝光方法以及曝光装置

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6288772B1 (en) 1999-02-12 2001-09-11 Nikon Corporation Scanning exposure method and scanning type exposure apparatus
JP2005107504A (ja) * 2003-09-01 2005-04-21 Samsung Electronics Co Ltd 露光マスク、これを含む露光装置及びこれを利用した表示装置用表示板の製造方法
JP2008066728A (ja) * 2006-09-08 2008-03-21 Asml Netherlands Bv オーバーレイエラーを測定するための半導体デバイス、オーバーレイエラーを測定するための方法、リソグラフィ装置、およびデバイス製造方法
KR20200029485A (ko) 2017-07-25 2020-03-18 도판 인사츠 가부시키가이샤 노광 장치 및 노광 방법
US10866521B2 (en) 2017-07-25 2020-12-15 Toppan Printing Co.. Ltd. Exposure apparatus and exposure method
CN111522204A (zh) * 2019-02-05 2020-08-11 东芝存储器株式会社 曝光方法以及曝光装置
CN111522204B (zh) * 2019-02-05 2023-02-21 铠侠股份有限公司 曝光方法以及曝光装置
JP2019117404A (ja) * 2019-03-22 2019-07-18 株式会社ニコン 露光装置、並びにディスプレイ及びデバイスの製造方法
JP2019117403A (ja) * 2019-03-22 2019-07-18 株式会社ニコン 露光装置、並びにディスプレイ及びデバイスの製造方法

Similar Documents

Publication Publication Date Title
KR100468234B1 (ko) 노광방법,노광장치및디스크
KR100675534B1 (ko) 회로디바이스나 표시디바이스의 제조방법, 및대형디스플레이장치
US7588869B2 (en) Divided exposure method for making a liquid crystal display
US20050105071A1 (en) Methods for patterning substrates having arbitrary and unexpected dimensional changes
JP4401551B2 (ja) 液晶表示装置の製造方法、表示装置の製造方法、及び液晶表示装置
KR100315911B1 (ko) 액정 표시 장치 패널, 그 제조 방법 및 정렬 방법
JPH1062809A (ja) 投影露光方法
JP2991304B2 (ja) 液晶表示装置及びその製造方法
JP2000066235A (ja) 液晶表示装置およびその製造方法
US7279257B2 (en) Pattern forming method, method of manufacturing thin film transistor substrate, method of manufacturing liquid crystal display and exposure mask
US7595207B2 (en) Method of exposing layer with light and method of manufacturing thin film transistor substrate for liquid crystal display device using the same
US7803501B2 (en) Mask for light exposure
TW543199B (en) Method for forming pattern on substrate and method for fabricating liquid crystal display using the same
JP2000250197A (ja) フォトマスク、ｔｆｔ基板の製造方法および表示装置の製造方法。
JP4221074B2 (ja) 液晶表示装置の製造方法
US20050099615A1 (en) System for fabricating electronic modules on substrates having arbitrary and unexpected dimensional changes
TW591698B (en) Thin film transistor array substrate and photolithography process and mask design thereof
JP4619508B2 (ja) パターン形成方法、薄膜トランジスタマトリクス基板の製造方法および露光マスク
KR100560979B1 (ko) 액정 표시 장치 및 그 제조 방법
JP2002203970A (ja) 薄膜トランジスタ及びそれを用いた液晶表示装置
CN113805425A (zh) 掩膜板、膜层的制作方法、显示基板及显示装置
US7388644B2 (en) Liquid crystal display device and method of fabricating the same
JP3473535B2 (ja) 液晶パネルの製造方法及び露光方法
JP4722565B2 (ja) 液晶表示装置
CN120630599A (zh) 拼接掩膜版及彩色滤光片的拼接曝光方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040930

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20041026

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041227

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20051004