JPH1056278A - Mounting structure for large power semiconductor element - Google Patents

Mounting structure for large power semiconductor element

Info

Publication number
JPH1056278A
JPH1056278A JP8212568A JP21256896A JPH1056278A JP H1056278 A JPH1056278 A JP H1056278A JP 8212568 A JP8212568 A JP 8212568A JP 21256896 A JP21256896 A JP 21256896A JP H1056278 A JPH1056278 A JP H1056278A
Authority
JP
Japan
Prior art keywords
semiconductor element
circuit board
heat conductor
mounting structure
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8212568A
Other languages
Japanese (ja)
Inventor
Michio Muraida
道夫 村井田
Yoshiki Suzuki
芳規 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP8212568A priority Critical patent/JPH1056278A/en
Publication of JPH1056278A publication Critical patent/JPH1056278A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors

Landscapes

  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Combinations Of Printed Boards (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a mounting structure for a large power semiconductor element wherein high heat radiation is obtained at low cost. SOLUTION: Relating to the implementation structure, a circuit substrate 2 to which a large power semiconductor element 1 is connected by a flip chip method is connected to the main substrate 3. Since the semiconductor element 1 and the main substrate 3 are, through a heat conductor 4, thermally connected together, the heat generated at the semiconductor element 1 is transferred to the main substrate 3 through the circuit substrate 2, and at the same time, it is transferred to the main substrate 3 through the heat conductor 4 for heat radiation, further, the heat transferred from the semiconductor element 1 to the heat conductor 4 can be radiated from the heat conductor 4.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、高電力型の半導体
素子が接続された回路基板をメイン基板に接続する場合
に好適な実装構造に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting structure suitable for connecting a circuit board to which a high-power semiconductor element is connected to a main board.

【0002】[0002]

【従来の技術】図6にはこの種従来の実装構造を示して
ある。同図において、101はGaAs半導体等の高電
力型半導体素子、101aは半導体素子101の下面に
設けられたバンプ、102は封止樹脂、103は回路基
板、104はメイン基板、104aはメイン基板104
の上面に設けられたグランド電極である。半導体素子1
01はフリップチップ法により回路基板103に接続さ
れ、回路基板103はリフロー法によりメイン基板10
4に接続されている。
2. Description of the Related Art FIG. 6 shows a conventional mounting structure of this kind. In the figure, 101 is a high power semiconductor element such as a GaAs semiconductor, 101a is a bump provided on the lower surface of the semiconductor element 101, 102 is a sealing resin, 103 is a circuit board, 104 is a main board, and 104a is a main board 104
Is a ground electrode provided on the upper surface of. Semiconductor element 1
01 is connected to the circuit board 103 by a flip chip method, and the circuit board 103 is connected to the main board 10 by a reflow method.
4 is connected.

【0003】この実装構造では、半導体素子101で発
生した熱を、バンプ101a及び封止樹脂102を通じ
て回路基板104に伝え、そして回路基板104からグ
ランド電極104aを通じてメイン基板105に伝えて
放熱する。
In this mounting structure, heat generated in the semiconductor element 101 is transmitted to the circuit board 104 through the bumps 101a and the sealing resin 102, and is transmitted from the circuit board 104 to the main board 105 through the ground electrode 104a to radiate heat.

【0004】[0004]

【発明が解決しようとする課題】ところで、GaAs半
導体等の高電力型半導体素子は素子内部での発熱量が高
いため、実装構造それ自体で決定される放熱特性が低い
と、局部的に素子温度が上昇して誤動作を起こしたり破
壊されるといった問題が生じる。
However, since a high-power semiconductor device such as a GaAs semiconductor generates a large amount of heat inside the device, if the heat radiation characteristics determined by the mounting structure itself is low, the temperature of the device locally increases. Rises, causing a problem such as malfunction or destruction.

【0005】図6に示した従来の実装構造でこの問題を
解消するには、回路基板103に熱伝導率の高い材料を
用いたり、バンプ101aの接触面積を増加させる等し
て放熱特性を高める必要があるが、このようなアプロー
チでは基板形成技術やバンプ形成技術が制約を受けてコ
ストアップを招く難点があると共に、期待するほどの放
熱特性を得ることができない。
In order to solve this problem in the conventional mounting structure shown in FIG. 6, a material having high thermal conductivity is used for the circuit board 103, or the contact area of the bump 101a is increased to improve the heat radiation characteristics. Although it is necessary to use such an approach, there is a problem that the cost is increased due to a limitation of the substrate forming technology and the bump forming technology, and heat radiation characteristics as expected cannot be obtained.

【0006】本発明は上記事情に鑑みてなされたもの
で、その目的とするところは、低コストで高い放熱特性
が得られる高電力型半導体素子の実装構造を提供するこ
とにある。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a mounting structure of a high-power semiconductor element which can obtain high heat radiation characteristics at low cost.

【0007】[0007]

【課題を解決するための手段】上記目的を達成するた
め、本発明は、高電力型の半導体素子がフリップチップ
法により接続された回路基板をメイン基板に接続して成
る高電力型半導体素子の実装構造において、半導体素子
とメイン基板とを熱伝導体を介して熱的に接続した、こ
とをその主たる特徴としている。
In order to achieve the above object, the present invention provides a high power type semiconductor device comprising a circuit board to which a high power type semiconductor device is connected by a flip-chip method and connected to a main substrate. The main feature of the mounting structure is that the semiconductor element and the main substrate are thermally connected via a heat conductor.

【0008】本発明に係る高電力型半導体素子の実装構
造によれば、半導体素子で発生した熱を、回路基板を経
由してメイン基板に伝えると同時に、熱伝導体を経由し
てメイン基板に伝えて放熱させることができる。しか
も、熱伝導体に伝えられた熱を該熱伝導体から放熱させ
ることができる。
According to the mounting structure of the high power type semiconductor device according to the present invention, the heat generated in the semiconductor device is transmitted to the main substrate via the circuit board and simultaneously to the main substrate via the heat conductor. The heat can be transmitted and dissipated. Moreover, heat transmitted to the heat conductor can be radiated from the heat conductor.

【0009】[0009]

【発明の実施の形態】BEST MODE FOR CARRYING OUT THE INVENTION

[第1の実施形態]図1には本発明の第1の実施形態に
係る実装構造を示してある。同図において、1はGaA
s半導体等の高電力型半導体素子、1aは半導体素子1
の下面に設けられたバンプ、2は回路基板、3はメイン
基板、3aはメイン基板3の上面に設けられたグランド
電極、3bはメイン基板3の上面に設けられた接続用電
極、4は熱伝導体である。
[First Embodiment] FIG. 1 shows a mounting structure according to a first embodiment of the present invention. In the figure, 1 is GaAs
a high-power semiconductor element such as an s-semiconductor;
2 is a circuit board, 3 is a main board, 3a is a ground electrode provided on the top face of the main board 3, 3b is a connection electrode provided on the top face of the main board 3, and 4 is a heat electrode. It is a conductor.

【0010】熱伝導体4は、ステンレス,アルミニウム
等の高熱伝導性の金属材料から成り、回路基板2の上面
形状よりも僅かに大きな矩形状の天板部4aと該天板部
4aの4辺から下方に延びる計4枚の側板部4bとから
下面開口の箱形に構成されている。また、4枚の側板部
4bのうち少なくとも対向する2枚の側板部4bの内面
には、回路基板2の上面端部に当接して熱伝導体4と回
路基板3との位置関係を規定する突部4cが設けられて
いる。更に、4枚の側板部4bのうち少なくとも対向す
る2枚の側板部4bの下端には、メイン基板3上で熱伝
導体4を安定に支持するための鍔部4dが側板部下辺に
沿って設けられている。
The heat conductor 4 is made of a metal material having high heat conductivity such as stainless steel or aluminum, and has a rectangular top plate 4a slightly larger than the top surface of the circuit board 2 and four sides of the top plate 4a. It is configured in a box shape with a lower surface opening from a total of four side plate portions 4b extending downward from. In addition, at least the inner surfaces of two opposing side plates 4b of the four side plates 4b abut on the upper surface end of the circuit board 2 to define the positional relationship between the heat conductor 4 and the circuit board 3. A protrusion 4c is provided. Further, a flange portion 4d for stably supporting the heat conductor 4 on the main board 3 is provided along a lower side of the side plate portion at a lower end of at least two opposing side plate portions 4b among the four side plate portions 4b. Is provided.

【0011】ここで、図1に示した実装構造の構築手順
を説明する。まず、半導体素子1を回路基板2の所定位
置に搭載して、フリップチップ法により半導体素子1と
回路基板2とを接続する。バンプ自体を接合材として利
用できない場合にはクリーム半田等の接合材を素子搭載
前に回路基板2に塗布する。また、必要に応じて半導体
素子1と回路基板2との隙間を樹脂(図示省略)で封止
する。
Here, a procedure for constructing the mounting structure shown in FIG. 1 will be described. First, the semiconductor element 1 is mounted at a predetermined position on the circuit board 2, and the semiconductor element 1 and the circuit board 2 are connected by a flip chip method. If the bump itself cannot be used as a bonding material, a bonding material such as cream solder is applied to the circuit board 2 before mounting the element. Further, a gap between the semiconductor element 1 and the circuit board 2 is sealed with a resin (not shown) as necessary.

【0012】次に、回路基板2上にある半導体素子1の
上面に熱伝導性の接着剤5を塗布してから、半導体素子
1の上面が接着剤5を介して熱伝導体4の天板部4a内
面に接するように回路基板2を熱伝導体4内に挿入し
て、半導体素子1と熱伝導体4とを接続する。
Next, after applying a thermally conductive adhesive 5 to the upper surface of the semiconductor element 1 on the circuit board 2, the upper surface of the semiconductor element 1 is placed on the top plate of the heat conductor 4 via the adhesive 5. The circuit board 2 is inserted into the heat conductor 4 so as to be in contact with the inner surface of the portion 4a, and the semiconductor element 1 and the heat conductor 4 are connected.

【0013】これにより、回路基板2はその上面及び4
側面を熱伝導体4によって完全に覆われ、回路基板2の
下面と鍔部4dの下面は同一平面内に位置する。回路基
板2を突部4cに当接させることで、半導体素子1の上
面と熱伝導体4の天板部4a内面とのクリアランスを管
理できるので、回路基板2を熱伝導体4内に挿入する際
に接着剤5が押し潰されて流れ落ちたり、また接着剤5
と天板部4a内面との間に隙間を生じるようなことはな
い。
As a result, the circuit board 2 has its upper surface and 4
The side surface is completely covered by the heat conductor 4, and the lower surface of the circuit board 2 and the lower surface of the flange 4d are located in the same plane. Since the clearance between the upper surface of the semiconductor element 1 and the inner surface of the top plate 4a of the heat conductor 4 can be managed by bringing the circuit board 2 into contact with the protrusion 4c, the circuit board 2 is inserted into the heat conductor 4. At this time, the adhesive 5 is crushed and runs down, or the adhesive 5
There will be no gap between the top plate 4a and the inner surface of the top plate 4a.

【0014】次に、回路基板2がグランド電極3a上に
位置し、且つ熱伝導体4の鍔部4dが接続用電極3b上
に位置するように熱伝導体4付きの回路基板2をメイン
基板3に搭載して、リフロー法により回路基板2及び熱
伝導体4とメイン基板3とを接続する。以上で図1に示
すような実装構造が得られる。
Next, the circuit board 2 with the heat conductor 4 is mounted on the main board so that the circuit board 2 is located on the ground electrode 3a and the flange 4d of the heat conductor 4 is located on the connection electrode 3b. The circuit board 2 and the heat conductor 4 are connected to the main board 3 by a reflow method. Thus, a mounting structure as shown in FIG. 1 is obtained.

【0015】本実施形態の実装構造によれば、半導体素
子1で発生した熱を、バンプ1aと回路基板2を経由し
てメイン基板3に伝えると同時に、接着剤5と熱伝導体
4を経由してメイン基板3に伝えて放熱させることがで
きる。しかも、半導体素子1から熱伝導体4に伝えられ
た熱を、広い面積下で空気と接触する熱伝導体4から放
熱させることができる。
According to the mounting structure of the present embodiment, the heat generated in the semiconductor element 1 is transmitted to the main board 3 via the bump 1a and the circuit board 2, and at the same time, is transferred via the adhesive 5 and the heat conductor 4. Then, the heat can be transmitted to the main board 3 and radiated. In addition, heat transmitted from the semiconductor element 1 to the heat conductor 4 can be radiated from the heat conductor 4 that comes into contact with air over a wide area.

【0016】つまり、2系統の放熱経路の利用して半導
体素子1で発生した熱を効果的に放熱させることがで
き、回路基板2の材料変更やバンプ1aの接触面積増加
等といったコストアップに繋がる方法を採用することな
く、実装構造それ自体の放熱特性を従来のものに比べ格
段高めることができる。
That is, the heat generated in the semiconductor element 1 can be effectively radiated by using the two heat radiation paths, which leads to an increase in cost such as a change in the material of the circuit board 2 and an increase in the contact area of the bump 1a. Without adopting the method, the heat radiation characteristics of the mounting structure itself can be remarkably improved as compared with the conventional one.

【0017】尚、熱伝導体4の側板部4bに設けた鍔部
4dは必ずしも必要なものではなく、側板部4b下端を
接続用電極3bに当接させて接続するようにしてもよ
い。また、回路基板2及び熱伝導体4とメイン基板3と
を熱伝導性の接着剤で接続するようにしてもよく、この
場合には接続用電極3bをメイン基板3から排除しても
よい。更に、半導体素子1の上面に金属膜を設ければ、
該半導体素子1と熱伝導体4との接続に半田を用いるこ
とも可能である。
The flange 4d provided on the side plate 4b of the heat conductor 4 is not always necessary, and the lower end of the side plate 4b may be brought into contact with the connection electrode 3b for connection. Further, the circuit board 2 and the heat conductor 4 may be connected to the main board 3 with a heat conductive adhesive. In this case, the connection electrode 3 b may be eliminated from the main board 3. Furthermore, if a metal film is provided on the upper surface of the semiconductor element 1,
It is also possible to use solder for connecting the semiconductor element 1 and the heat conductor 4.

【0018】[第2の実施形態]図2には本発明の第2
の実施形態に係る実装構造を示してある。本実施形態が
第1の実施形態と異なるところは、熱伝導体6の天板6
aに部品1の上面形状よりも小さな開口6eを設けた点
にあり、熱伝導体6の天板部,側板部,突部及び鍔部に
6a,6b,6c,6dの符号を付けた以外は第1の実
施形態と構成は同じで、また実装構造構築手順も第1の
実施形態と同じである。
[Second Embodiment] FIG. 2 shows a second embodiment of the present invention.
2 shows a mounting structure according to the embodiment. This embodiment is different from the first embodiment in that the top plate 6 of the heat conductor 6
a is provided with an opening 6e smaller than the upper surface shape of the component 1, except that the top plate, side plate, protrusion, and flange of the heat conductor 6 are denoted by reference numerals 6a, 6b, 6c, and 6d. Has the same configuration as that of the first embodiment, and the mounting structure construction procedure is also the same as that of the first embodiment.

【0019】本実施形態の実装構造によれば、半導体素
子1で発生した熱を、熱伝導体6の天板部6aに設けた
開口6eから直接空気中に放熱して放熱特性をより高め
ることができる。他の作用,効果は第1の実施形態と同
様である。
According to the mounting structure of the present embodiment, the heat generated in the semiconductor element 1 is radiated directly into the air from the opening 6e provided in the top plate 6a of the heat conductor 6, thereby further improving the heat radiation characteristics. Can be. Other operations and effects are the same as those of the first embodiment.

【0020】尚、半導体素子1の上面に接着剤5を塗布
してから回路基板2を熱伝導体6内に挿入するようにし
たが、回路基板2を熱伝導体6内に挿入してから熱伝導
体6の天板部6aに設けた開口6eから接着剤5を供給
して接続を行うようにしてもよい。また、半導体素子1
の上面に金属膜を設ければ、該半導体素子1と熱伝導体
4との接続に半田を用いることも可能であり、半田供給
を天板部6aに設けた開口6eから行うこともできる。
更に、熱伝導体6の側板部6bに設けた鍔部6dは必ず
しも必要なものではなく、側板部6b下端を接続用電極
3bに当接させて接続するようにしてもよい。更にま
た、回路基板2及び熱伝導体6とメイン基板3とを熱伝
導性の接着剤で接続するようにしてもよく、この場合に
は接続用電極3bをメイン基板3から排除してもよい。
Although the adhesive 5 is applied to the upper surface of the semiconductor element 1, the circuit board 2 is inserted into the heat conductor 6, but after the circuit board 2 is inserted into the heat conductor 6, The connection may be made by supplying the adhesive 5 from an opening 6 e provided in the top plate 6 a of the heat conductor 6. In addition, the semiconductor element 1
If a metal film is provided on the upper surface of the semiconductor device 1, solder can be used to connect the semiconductor element 1 and the thermal conductor 4, and solder can be supplied from the opening 6e provided in the top plate 6a.
Further, the flange 6d provided on the side plate 6b of the heat conductor 6 is not always necessary, and the lower end of the side plate 6b may be connected to the connection electrode 3b. Furthermore, the circuit board 2 and the heat conductor 6 may be connected to the main board 3 with a heat conductive adhesive. In this case, the connection electrode 3b may be eliminated from the main board 3. .

【0021】[第3の実施形態]図3には本発明の第3
の実施形態に係る実装構造を示してある。本実施形態が
第1の実施形態と異なるところは、熱伝導体7の天板部
7aを回路基板8の上面形状よりも小さく形成し、側板
部7cの外面に突部7cを設け、該側板部7cの下端に
回路基板8を貫く挿入片7dを設けた点と、回路基板8
に熱伝導体7の挿入片7dが挿着される貫通孔8aを設
けた点にあり、メイン基板3の接続用電極3bの位置及
び形状を変更した以外は第1の実施形態と構成は同じで
ある。
[Third Embodiment] FIG. 3 shows a third embodiment of the present invention.
2 shows a mounting structure according to the embodiment. This embodiment is different from the first embodiment in that the top plate 7a of the heat conductor 7 is formed smaller than the top surface of the circuit board 8 and the projection 7c is provided on the outer surface of the side plate 7c. A point provided with an insertion piece 7d penetrating the circuit board 8 at the lower end of the portion 7c;
Is provided with a through hole 8a into which the insertion piece 7d of the heat conductor 7 is inserted, and the configuration is the same as that of the first embodiment except that the position and shape of the connection electrode 3b of the main board 3 are changed. It is.

【0022】ここで、図3に示した実装構造の構築手順
を説明する。まず、半導体素子1を回路基板8の所定位
置に搭載して、フリップチップ法により半導体素子1と
回路基板8とを接続する。バンプ自体を接合材として利
用できない場合にはクリーム半田等の接合材を素子搭載
前に回路基板8に塗布する。また、必要に応じて半導体
素子1と回路基板8との隙間を樹脂(図示省略)で封止
する。
Here, the procedure for constructing the mounting structure shown in FIG. 3 will be described. First, the semiconductor element 1 is mounted on a predetermined position of the circuit board 8, and the semiconductor element 1 and the circuit board 8 are connected by a flip chip method. If the bump itself cannot be used as a bonding material, a bonding material such as cream solder is applied to the circuit board 8 before mounting the element. Further, a gap between the semiconductor element 1 and the circuit board 8 is sealed with a resin (not shown) as necessary.

【0023】次に、回路基板8上にある半導体素子1の
上面に熱伝導性の接着剤5を塗布してから、半導体素子
1の上面が接着剤5を介して熱伝導体7の天板部7a内
面に接するように熱伝導体7の挿入片7dを回路基板8
の貫通孔8aに挿入して、半導体素子1と熱伝導体7と
を接続する。
Next, after applying a thermally conductive adhesive 5 to the upper surface of the semiconductor element 1 on the circuit board 8, the upper surface of the semiconductor element 1 is placed on the top plate of the heat conductor 7 via the adhesive 5. The insertion piece 7d of the heat conductor 7 is inserted into the circuit board 8 so as to be in contact with the inner surface of the portion 7a.
The semiconductor element 1 and the heat conductor 7 are connected to each other through the through hole 8a.

【0024】これにより、半導体素子1はその上面及び
4側面を熱伝導体7によって完全に覆われ、熱伝導体7
の挿入片7d下端は回路基板8の下面から露出する。回
路基板8を突部7cに当接させることで、半導体素子1
の上面と熱伝導体7の天板部7a内面とのクリアランス
を管理できるので、半導体素子1を熱伝導体7内に挿入
する際に接着剤5が押し潰されて流れ落ちたり、また接
着剤5と天板部7a内面との間に隙間を生じるようなこ
とこはない。
As a result, the semiconductor element 1 is completely covered with the heat conductor 7 on the upper surface and the four side surfaces.
The lower end of the insertion piece 7d is exposed from the lower surface of the circuit board 8. By contacting the circuit board 8 with the protrusion 7c, the semiconductor element 1
Can be managed between the upper surface of the heat conductor 7 and the inner surface of the top plate portion 7a of the heat conductor 7, so that when the semiconductor element 1 is inserted into the heat conductor 7, the adhesive 5 is crushed and flows down. There is no possibility that a gap is generated between the inner surface of the top plate 7a and the top plate 7a.

【0025】次に、回路基板2がグランド電極3a上に
位置し、且つ熱伝導体7の挿入片7dの露出部分が接続
用電極3b上に位置するように熱伝導体7付きの回路基
板8をメイン基板3に搭載して、リフロー法により回路
基板8及び熱伝導体7とメイン基板3とを接続する。以
上で図3に示すような実装構造が得られる。
Next, the circuit board 8 with the heat conductor 7 is positioned so that the circuit board 2 is positioned on the ground electrode 3a and the exposed portion of the insertion piece 7d of the heat conductor 7 is positioned on the connection electrode 3b. Is mounted on the main board 3, and the circuit board 8 and the heat conductor 7 are connected to the main board 3 by a reflow method. Thus, a mounting structure as shown in FIG. 3 is obtained.

【0026】本実施形態の実装構造によれば、回路基板
8が大きく熱伝導体7内に収納できないような場合でも
第1の実施形態と同様に2系統の放熱経路を設けること
ができる。他の作用,効果は第1の実施形態と同様であ
る。
According to the mounting structure of the present embodiment, even when the circuit board 8 is too large to be accommodated in the heat conductor 7, two heat radiation paths can be provided as in the first embodiment. Other operations and effects are the same as those of the first embodiment.

【0027】尚、回路基板8及び熱伝導体7とメイン基
板3とを熱伝導性の接着剤で接続するようにしてもよ
く、この場合には接続用電極3bをメイン基板3から排
除してもよい。
The circuit board 8 and the heat conductor 7 may be connected to the main board 3 with a heat conductive adhesive. In this case, the connection electrodes 3b are removed from the main board 3. Is also good.

【0028】[第4の実施形態]図4には本発明の第4
の実施形態に係る実装構造を示してある。本実施形態が
第1の実施形態と異なるところは、熱伝導体9の天板9
aに半導体素子1の上面形状よりも大きな開口9eを設
け、開口9eの内面を接着剤5を介して半導体素子1の
側面に接合した点にあり、熱伝導体9の天板部,側板
部,突部及び鍔部に9a,9b,9c,9dの符号を付
けた以外は第1の実施形態と構成は同じである。
[Fourth Embodiment] FIG. 4 shows a fourth embodiment of the present invention.
2 shows a mounting structure according to the embodiment. This embodiment is different from the first embodiment in that a top plate 9 of the heat conductor 9 is provided.
a is provided with an opening 9e larger than the upper surface shape of the semiconductor element 1, and the inner surface of the opening 9e is joined to the side surface of the semiconductor element 1 via an adhesive 5, and the top plate and the side plate of the heat conductor 9 The configuration is the same as that of the first embodiment except that the reference numerals 9a, 9b, 9c and 9d are assigned to the projections and the flanges.

【0029】ここで、図4に示した実装構造の構築手順
を説明する。まず、半導体素子1を回路基板2の所定位
置に搭載して、フリップチップ法により半導体素子1と
回路基板2とを接続する。バンプ自体を接合材として利
用できない場合にはクリーム半田等の接合材を素子搭載
前に回路基板2に塗布する。また、必要に応じて半導体
素子1と回路基板2との隙間を樹脂(図示省略)で封止
する。
Here, a procedure for constructing the mounting structure shown in FIG. 4 will be described. First, the semiconductor element 1 is mounted at a predetermined position on the circuit board 2, and the semiconductor element 1 and the circuit board 2 are connected by a flip chip method. If the bump itself cannot be used as a bonding material, a bonding material such as cream solder is applied to the circuit board 2 before mounting the element. Further, a gap between the semiconductor element 1 and the circuit board 2 is sealed with a resin (not shown) as necessary.

【0030】次に、回路基板2上にある半導体素子1の
上面が熱伝導体9の開口9eから露出するように回路基
板2を熱伝導体9内に挿入してから、開口9eの内面と
部品1の側面との間の隙間に熱伝導接着剤5を供給し
て、半導体素子1と熱伝導体9とを接続する。
Next, the circuit board 2 is inserted into the thermal conductor 9 so that the upper surface of the semiconductor element 1 on the circuit board 2 is exposed from the opening 9e of the thermal conductor 9, and then the inner surface of the opening 9e is removed. The heat conductive adhesive 5 is supplied to the gap between the side surface of the component 1 and the semiconductor element 1 and the heat conductor 9 are connected.

【0031】これにより、回路基板2はその上面及び4
側面を熱伝導体9によって完全に覆われ、半導体素子1
の上面は熱伝導体9の開口9eから露出する。
Thus, the circuit board 2 has its upper surface and 4
The sides are completely covered by the heat conductor 9 and the semiconductor element 1
Is exposed from the opening 9e of the heat conductor 9.

【0032】次に、回路基板2がグランド電極3a上に
位置し、且つ熱伝導体9の鍔部9dが接続用電極3b上
に位置するように熱伝導体9付きの回路基板2をメイン
基板3に搭載して、リフロー法により回路基板2及び熱
伝導体9とメイン基板3とを接続する。以上で図1に示
すような実装構造が得られる。
Next, the circuit board 2 with the heat conductor 9 is mounted on the main board so that the circuit board 2 is located on the ground electrode 3a and the flange 9d of the heat conductor 9 is located on the connection electrode 3b. 3, the circuit board 2 and the thermal conductor 9 are connected to the main board 3 by a reflow method. Thus, a mounting structure as shown in FIG. 1 is obtained.

【0033】本実施形態の実装構造によれば、半導体素
子1で発生した熱を、熱伝導体9の天板9aに設けた開
口9eから直接空気中に放熱して放熱特性をより高める
ことができる。また、熱伝導体9の上面高さと半導体素
子1の上面高さとを一致させることができるので、半導
体素子1の厚みが大きい場合でも熱伝導体9付きの回路
基板3の厚み寸法が大きくならない利点がある。他の作
用,効果は第1の実施形態と同様である。
According to the mounting structure of the present embodiment, the heat generated in the semiconductor element 1 can be directly radiated into the air from the opening 9e provided in the top plate 9a of the heat conductor 9 to further improve the heat radiation characteristics. it can. Further, since the upper surface height of the heat conductor 9 and the upper surface height of the semiconductor element 1 can be matched, the advantage that the thickness of the circuit board 3 with the heat conductor 9 does not increase even when the thickness of the semiconductor element 1 is large. There is. Other operations and effects are the same as those of the first embodiment.

【0034】尚、熱伝導体9の側板部9bに設けた鍔部
9dは必ずしも必要なものではなく、側板部9b下端を
接続用電極3bに当接させて接続するようにしてもよ
い。また、回路基板2及び熱伝導体9とメイン基板3と
を熱伝導性の接着剤で接続するようにしてもよく、この
場合には接続用電極3bをメイン基板3から排除しても
よい。更に、半導体素子1の側面に金属膜を設ければ該
半導体素子1と熱伝導体9との接続に半田を用いること
も可能である。
The flange 9d provided on the side plate 9b of the heat conductor 9 is not always necessary. The lower end of the side plate 9b may be brought into contact with the connection electrode 3b for connection. Further, the circuit board 2 and the heat conductor 9 may be connected to the main board 3 with a heat conductive adhesive. In this case, the connection electrode 3b may be eliminated from the main board 3. Furthermore, if a metal film is provided on the side surface of the semiconductor element 1, it is possible to use solder to connect the semiconductor element 1 and the heat conductor 9.

【0035】[第5の実施形態]図5には本発明の第5
の実施形態に係る実装構造を示してある。本実施形態が
第1の実施形態と異なるところは、回路基板2に接続さ
れた複数の半導体素子1を1つの熱伝導体4で覆った点
にあり、他の構成及び実装構造構築手順は第1の実施形
態と同じである。
[Fifth Embodiment] FIG. 5 shows a fifth embodiment of the present invention.
2 shows a mounting structure according to the embodiment. This embodiment is different from the first embodiment in that a plurality of semiconductor elements 1 connected to a circuit board 2 are covered with a single heat conductor 4, and other configurations and mounting structure construction procedures are similar to those of the first embodiment. This is the same as the first embodiment.

【0036】本実施形態の実装構造によれば、複数の半
導体素子1で発生した熱を、共通の熱伝導体4を通じて
メイン基板3に伝えて放熱できる。他の作用,効果は第
1の実施形態と同様である。
According to the mounting structure of the present embodiment, the heat generated in the plurality of semiconductor elements 1 can be transmitted to the main board 3 through the common heat conductor 4 and radiated. Other operations and effects are the same as those of the first embodiment.

【0037】尚、熱伝導体4の側板部4bに設けた鍔部
4dは必ずしも必要なものではなく、側板部4b下端を
接続用電極3bに当接させて接続するようにしてもよ
い。また、回路基板2及び熱伝導体4とメイン基板3と
を熱伝導性の接着剤で接続するようにしてもよく、この
場合には接続用電極3bをメイン基板3から排除しても
よい。更に、半導体素子1の上面に金属膜を設ければ、
該半導体素子1と熱伝導体4との接続に半田を用いるこ
とも可能である。
The flange 4d provided on the side plate 4b of the heat conductor 4 is not always necessary. The lower end of the side plate 4b may be brought into contact with the connection electrode 3b for connection. Further, the circuit board 2 and the heat conductor 4 may be connected to the main board 3 with a heat conductive adhesive. In this case, the connection electrode 3 b may be eliminated from the main board 3. Furthermore, if a metal film is provided on the upper surface of the semiconductor element 1,
It is also possible to use solder for connecting the semiconductor element 1 and the heat conductor 4.

【0038】[0038]

【発明の効果】以上詳述したように、本発明によれば、
半導体素子で発生した熱を、回路基板を経由してメイン
基板に伝えると同時に、熱伝導体を経由してメイン基板
に伝えて放熱させることができ、しかも半導体素子から
熱伝導体に伝えられた熱を該熱伝導体から放熱させるこ
とができる。つまり、2系統の放熱経路の利用して半導
体素子で発生した熱を効果的に放熱させて、回路基板の
材料変更やバンプの接触面積増加等といったコストアッ
プに繋がる方法を採用することなく、実装構造それ自体
の放熱特性を従来のものに比べ格段高めることができ
る。
As described in detail above, according to the present invention,
The heat generated in the semiconductor element can be transferred to the main board via the circuit board, and at the same time, can be transferred to the main board via the heat conductor to dissipate heat, and further transferred from the semiconductor element to the heat conductor. Heat can be dissipated from the heat conductor. In other words, it is possible to effectively dissipate the heat generated in the semiconductor element by utilizing the two heat dissipation paths, and to mount without using a method that leads to an increase in cost such as a change in the material of the circuit board or an increase in the contact area of the bumps. The heat radiation characteristics of the structure itself can be significantly improved as compared with the conventional structure.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の第1の実施形態に係る実装構造の上面
図とそのb−b線断面図
FIG. 1 is a top view of a mounting structure according to a first embodiment of the present invention and a sectional view taken along line bb of FIG.

【図2】本発明の第2の実施形態に係る実装構造の断面
FIG. 2 is a sectional view of a mounting structure according to a second embodiment of the present invention.

【図3】本発明の第3の実施形態に係る実装構造の断面
FIG. 3 is a cross-sectional view of a mounting structure according to a third embodiment of the present invention.

【図4】本発明の第4の実施形態に係る実装構造の断面
FIG. 4 is a sectional view of a mounting structure according to a fourth embodiment of the present invention.

【図5】本発明の第5の実施形態に係る実装構造の断面
FIG. 5 is a sectional view of a mounting structure according to a fifth embodiment of the present invention.

【図6】従来例に係る実装構造の断面図FIG. 6 is a sectional view of a mounting structure according to a conventional example.

【符号の説明】[Explanation of symbols]

1…半導体素子、2…回路基板、3…メイン基板、4…
熱伝導体、5…接着剤、6…熱伝導体、7…熱伝導体、
8…回路基板、9…熱伝導体。
DESCRIPTION OF SYMBOLS 1 ... Semiconductor element, 2 ... Circuit board, 3 ... Main board, 4 ...
Heat conductor, 5 ... adhesive, 6 ... heat conductor, 7 ... heat conductor,
8: circuit board, 9: thermal conductor.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 高電力型の半導体素子がフリップチップ
法により接続された回路基板をメイン基板に接続して成
る高電力型半導体素子の実装構造において、 半導体素子とメイン基板とを熱伝導体を介して熱的に接
続した、 ことを特徴とする高電力型半導体素子の実装構造。
1. A mounting structure for a high-power semiconductor element comprising a circuit board, to which a high-power semiconductor element is connected by a flip-chip method, connected to a main board. A mounting structure for a high-power semiconductor element, which is thermally connected via
【請求項2】 回路基板がメイン基板に面実装により接
続されている、 ことを特徴とする請求項1記載の高電力型半導体素子の
実装構造。
2. The mounting structure for a high-power semiconductor device according to claim 1, wherein the circuit board is connected to the main board by surface mounting.
【請求項3】 熱伝導体が半導体素子の上面形状よりも
大きな天板部と該天板端縁から下方に延びる側板部とを
備え、天板部を半導体素子に接続され、且つ側板部を回
路基板外側からメイン基板に接続されている、 ことを特徴とする請求項1または2記載の高電力型半導
体素子の実装構造。
3. A top plate having a heat conductor larger than the top surface of the semiconductor element and a side plate extending downward from an edge of the top plate, wherein the top plate is connected to the semiconductor element and the side plate is connected to the semiconductor element. The mounting structure for a high-power semiconductor device according to claim 1, wherein the mounting structure is connected to the main board from outside the circuit board.
【請求項4】 熱伝導体が半導体素子の上面形状よりも
大きな天板部と該天板部から下方に延び回路基板を貫通
する側板部とを備え、天板部を半導体素子に接続され、
且つ回路基板を貫通した側板部をメイン基板に接続され
ている、 ことを特徴とする請求項1または2記載の高電力型半導
体素子の実装構造。
4. A semiconductor device comprising: a top plate having a heat conductor larger than a top surface of the semiconductor element; and a side plate extending downward from the top plate and penetrating a circuit board, wherein the top plate is connected to the semiconductor element;
3. The mounting structure for a high-power semiconductor device according to claim 1, wherein a side plate portion penetrating the circuit board is connected to the main board.
【請求項5】 熱伝導体の天板部に半導体素子が露出す
る開口を設けた、 ことを特徴とする請求項3または4記載の高電力型半導
体素子の実装構造。
5. The mounting structure for a high-power semiconductor device according to claim 3, wherein an opening for exposing the semiconductor device is provided in a top plate portion of the heat conductor.
JP8212568A 1996-08-12 1996-08-12 Mounting structure for large power semiconductor element Pending JPH1056278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8212568A JPH1056278A (en) 1996-08-12 1996-08-12 Mounting structure for large power semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8212568A JPH1056278A (en) 1996-08-12 1996-08-12 Mounting structure for large power semiconductor element

Publications (1)

Publication Number Publication Date
JPH1056278A true JPH1056278A (en) 1998-02-24

Family

ID=16624859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8212568A Pending JPH1056278A (en) 1996-08-12 1996-08-12 Mounting structure for large power semiconductor element

Country Status (1)

Country Link
JP (1) JPH1056278A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2828765A1 (en) * 2001-08-16 2003-02-21 Orient Semiconductor Elect Ltd SEMICONDUCTOR CHIP HOLDER WITH COOLING SYSTEM AND SUITABLE RADIATOR
US8587947B2 (en) 2010-11-04 2013-11-19 Shinko Electric Industries Co., Ltd. Heat spreader for IC package, and IC package clamper having the heat spreader

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2828765A1 (en) * 2001-08-16 2003-02-21 Orient Semiconductor Elect Ltd SEMICONDUCTOR CHIP HOLDER WITH COOLING SYSTEM AND SUITABLE RADIATOR
US8587947B2 (en) 2010-11-04 2013-11-19 Shinko Electric Industries Co., Ltd. Heat spreader for IC package, and IC package clamper having the heat spreader

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