JPH1041632A - Multilayer wiring board - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a multilayer wiring board wherein a wiring conductor is constituted as a thin film wiring conductor formed by using a thin film forming technique, miniaturization is realized by including a resistance element in the inside, and wiring density is high. SOLUTION: This multilayered wiring board consists of the following; an insulating board 1 having a through hole 5 penetrating an upper and a lower main surfaces, a conducting layer 6 introduced from the upper surface of the insulating board 1 to the lower surface via an inner wall of the through hole 5, organic resin filler 7 with which the inside of the through hole 5 is filled, and a multilayer wiring part 4 stuck on at least one main surface of the insulating board 1 wherein a plurality of organic resin insulating layers 2 and a plurality of thin film wiring conductors 3 are alternately arranged in multilayer, and a part of the thin film wiring conductors 3 is electrically connected with the conducting layer 6. A thin film resistance layer 10 is stuck on at least an organic resin insulating layer 2, and at least a pair of parts of the thin film wiring conductors 3 are brought into contact with the thin film resistance layer 10. A resistance element is electrically connected with the part between the thin film wiring conductors 3.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multilayer wiring board, and more particularly to a multilayer wiring board used for a hybrid integrated circuit device, a semiconductor element housing package for housing a semiconductor element, and the like.

[0002]

2. Description of the Related Art Conventionally, a hybrid integrated circuit device in which a large number of active components such as a semiconductor device and passive components such as a capacitance device and a resistance device are mounted to constitute a predetermined electronic circuit is usually used.
Prepare a wiring board having a structure in which a wiring conductor made of a refractory metal powder such as tungsten or molybdenum is formed inside and on the surface of the insulating substrate, and then mount semiconductor elements, capacitance elements, resistance elements, etc. on the surface of the wiring board. By attaching and connecting the electrodes of the semiconductor element and the like to the wiring conductor, a hybrid integrated circuit device is obtained.

[0003] Wiring boards used in such conventional hybrid integrated circuit devices and the like are generally manufactured by employing a ceramic lamination technology and a thick film technology such as a screen printing method, and more specifically, by the following method. Has been produced.

[0004] (1) First, an organic solvent and a solvent are added to and mixed with a ceramic raw material powder such as alumina which is excellent in electrical insulation to obtain a plurality of ceramic green sheets, and the raw ceramic sheets are formed on the upper and lower surfaces of each ceramic raw sheet. A conductive paste composed of a high melting point metal powder such as tungsten or molybdenum is printed and applied in a predetermined pattern by employing a conventionally known thick film method such as a screen printing method.

(2) Each of the above ceramic green sheets is laminated to obtain a laminate, which is fired at a temperature of about 1500 ° C., and a wiring conductor made of a high melting point metal powder such as tungsten, molybdenum or the like inside and on the surface. Is obtained.

(3) Finally, the surface of the wiring conductor exposed to the atmosphere is excellent in corrosion resistance such as nickel and gold, has good conductivity, and has wettability (reactivity) with a brazing material such as solder. A good metal is deposited by a plating method, thereby completing a wiring board as a product.

[0007]

However, in this conventional wiring board, the wiring conductor is formed into a predetermined pattern by applying a conductive paste made of a high melting point metal powder such as tungsten or molybdenum by a screen printing method or the like. It is formed by printing and applying, and has a drawback that it is difficult to miniaturize the wiring conductor and it is not possible to form the wiring conductor at high density.

In addition, the conventional wiring board has a drawback that active components such as semiconductor elements and passive components such as capacitance elements and resistance elements are mounted on the surface thereof, and the size increases in accordance with the number of mounted components. Was.

[0009]

SUMMARY OF THE INVENTION The present invention has been devised in view of the above-mentioned drawbacks, and has as its object to make a wiring conductor a thin film wiring conductor formed by a thin film forming technique and to internally incorporate a resistance element. Accordingly, it is an object of the present invention to provide a multilayer wiring board which is reduced in size and has a high density of wiring.

According to the present invention, there is provided an insulating substrate having a through hole penetrating both upper and lower main surfaces, a conductive layer extending from the upper surface of the insulating substrate to the lower surface through the inner wall of the through hole, and filled in the through hole. The organic resin filler, which is attached on at least one main surface of the insulating substrate, and a plurality of organic resin insulating layers and a plurality of thin film wiring conductors are alternately arranged in a multilayer and a part of the thin film wiring conductor is A multilayer wiring board comprising: a multilayer wiring portion electrically connected to a conductive layer, wherein a thin film resistor layer is provided on the at least one organic resin insulating layer, and at least one pair of the thin film resistor layers is provided on the thin film resistor layer. And a resistor element is electrically connected between the thin film wiring conductors.

Further, the present invention is characterized in that the thin film resistor is at least one of tantalum nitride, tantalum silicide, nickel chromium, nickel chromium silicide, molybdenum silicide, tungsten silicide, titanium silicide, nickel silicide, chromium silicide, niobium silicate and tantalum silicate. It is characterized by comprising one kind.

Further, according to the present invention, the thickness of the thin film resistor is set to 0.1.
The thickness is 1 μm to 5 μm.

According to the multilayer wiring board of the present invention, since the wiring is formed on the insulating substrate by the thin film forming technique, the wiring can be miniaturized, and the wiring can be formed at an extremely high density.

Further, according to the multilayer wiring board of the present invention, a plurality of organic resin insulating layers and a plurality of thin film wiring conductors are alternately arranged in multiple layers on at least one organic resin insulating layer of a multilayer wiring portion. Since the thin-film resistor layer is applied and at least a part of the pair of thin-film wiring conductors is brought into contact with the thin-film resistor layer, and the resistive element is electrically connected between the thin-film wiring conductors, the semiconductor element is mounted on the multilayer wiring board. When a hybrid integrated circuit device is formed by mounting components such as a capacitor, a resistor, and a resistor, it is not necessary to separately mount a large number of resistors on the multilayer wiring board. The number is reduced, and the size of the hybrid integrated circuit device or the like can be reduced.

[0015]

Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment of a multilayer wiring board according to the present invention, wherein 1 is an insulating substrate, 2 is an organic resin insulating layer, and 3 is a thin film wiring conductor.

On the upper surface of the insulating substrate 1, a multilayer wiring portion 4 comprising an organic resin insulating layer 2 and a thin film wiring conductor 3 is disposed, and functions as a support member for supporting the multilayer wiring portion 4.

The insulating substrate 1 is made of an oxide ceramic such as an aluminum oxide sintered body or a mullite sintered body, or an aluminum nitride sintered body having an oxide film on its surface.
It is made of an electrically insulating material such as a non-oxide ceramic such as a silicon carbide sintered body, and a glass epoxy resin in which a cloth woven with glass fibers is impregnated with an epoxy resin. In the case of a compact, a suitable organic solvent and a solvent are added to raw material powders such as alumina, silica, calcia, and magnesia to form a slurry by mixing and adding the same to a conventionally known doctor blade method or calender roll. By forming the ceramic green sheet (ceramic raw sheet) by adopting the method,
Thereafter, the ceramic green sheet is subjected to an appropriate punching process so as to have a predetermined shape and a high temperature (about 16 ° C.).
(00 ° C.) or by mixing a raw material powder such as alumina with an appropriate organic solvent and a solvent to adjust the raw material powder and form the raw material powder into a predetermined shape by a press molding machine. About 1600 ° C
If it is made by firing at a temperature of, and made of glass epoxy resin, for example, impregnating the epoxy resin precursor into a cloth woven of glass fibers and heat curing the epoxy resin precursor at a predetermined temperature Produced by

The insulating substrate 1 is formed with a through hole 5 having a diameter of, for example, 300 μm to 500 μm, which penetrates the upper and lower main surfaces. Conductive layers 6 leading to both sides are applied.

The through hole 5 electrically connects the thin film wiring conductor 3 of the multilayer wiring portion 4 formed on the upper surface of the insulating substrate 1 to be described later and an external electric circuit, or is formed on both upper and lower main surfaces of the insulating substrate 1. When the multilayer wiring portion 4 is provided, it acts as a forming hole for forming a conductive layer 6 for electrically connecting the thin film wiring conductors 3 of the multilayer wiring portion 4 on both main surfaces, and a drill is formed in the insulating substrate 1. A predetermined position and a predetermined shape of the insulating substrate 1 are formed by performing a hole forming method.

Further, a conductive layer 6 is formed on the inner wall of the through hole 5 and the upper and lower surfaces of the insulating substrate 1, and the conductive layer 6 is made of a metal material such as copper or nickel. By adopting the plating method and the etching method, it is formed on the inner wall of the through hole 5 with both ends being led out to the upper and lower surfaces of the insulating substrate 1.

The conductive layer 6 electrically connects the thin-film wiring conductors 3 of the multilayer wiring portion 4 provided on the main surface of the insulating substrate 1 to an external electric circuit, and is provided on both upper and lower main surfaces of the insulating substrate 1. It functions to electrically connect the thin film wiring conductors 3 of the respective multilayer wiring portions 4 to be provided.

The through-hole 5 formed in the insulating substrate 1 is filled with an organic resin filler 7 made of epoxy resin, and the through-hole 5 is completely filled with the organic resin filler 7. Both end surfaces of the organic resin filler 7 are flush with the surface of the conductive layer 6 attached to the upper and lower main surfaces of the insulating substrate 1.

The organic resin filler 7 is used to form a multilayer wiring portion 4 comprising an organic resin insulating layer 2 and a thin film wiring conductor 3 which will be described later on the upper surface and / or lower surface of the insulating substrate 1. It functions to keep the resin insulating layer 2 and the thin film wiring conductor 3 flat.

The organic resin filler 7 fills the through-hole 5 of the insulating substrate 1 with an epoxy resin precursor, and then is applied with a temperature of 80 ° C. to 200 ° C. for 0.5 to 3 hours. Then, it is completely filled in the through holes 5 of the insulating substrate 1 by thermosetting.

Further, the insulating substrate 1 is provided with a multilayer wiring portion 4 on the upper surface of which an organic resin insulating layer 2 and thin film wiring conductors 3 are alternately arranged in multiple layers.
Are electrically connected to the conductive layer 6.

The organic resin insulating layer 2 constituting the multilayer wiring portion 4 functions to electrically insulate the thin film wiring conductors 3 positioned above and below, and the thin film wiring conductors 3 serve as transmission paths for transmitting electric signals. Works.

The organic resin insulating layer 2 of the multilayer wiring portion 4 is made of an epoxy resin. For example, when the organic resin insulating layer 2 is made of an epoxy resin, an amine-based curing agent such as a bisphenol A type epoxy resin, a novolak type epoxy resin, a glycidyl ester type epoxy resin, or the like is used. A curing agent such as an imidazole-based curing agent and an acid anhydride-based curing agent is added and mixed to obtain a paste-like epoxy resin precursor, and the epoxy resin precursor is applied to the upper portion of the insulating substrate 1 by spin coating. After a while
This is formed by heat-treating with heat of about 80 ° C. to 200 ° C. for 0.5 to 3 hours and heat curing.

The organic resin insulating layer 2 has a through hole 8 at a predetermined position, the minimum diameter of which is about 1.5 times the thickness of the organic resin insulating layer 2. Acts as a forming hole for forming a through-hole conductor 9 for electrically connecting each of the thin film wiring conductors 3 positioned above and below via an organic resin insulating layer 2 described later.

The through holes 8 provided in the organic resin insulating layer 2 are formed at predetermined positions by, for example, photolithography, specifically, applying a resist material on the organic resin insulating layer 2 and exposing and developing the resist material. A window having a predetermined shape is formed, and then an etchant is disposed on the window of the resist material, the organic resin insulating layer 2 located on the window of the resist material is removed, and a hole ( A through hole is formed, and finally, the resist material is peeled off from the organic resin insulating layer 2 and removed.

Further, a thin-film wiring conductor 3 having a predetermined pattern is provided on the upper surface of each organic resin insulating layer 2, and a through-hole conductor 9 is provided on the inner wall of a through hole 8 provided in each organic resin insulating layer 2. Each of the thin-film wiring conductors 3 positioned above and below the organic resin insulating layer 2 with the through-hole conductor 9 interposed therebetween is electrically connected.

The thin-film wiring conductor 3 and the through-hole conductor 9 provided on the upper surface of each of the organic resin insulating layers 2 and in the through-holes 8 are made of a metal material such as copper, nickel, gold, or aluminum by electroless plating or vapor deposition. For example, in the case of being formed of copper, copper sulfate is formed on the upper surface of the organic resin insulating layer 2 and the inner surface of the through hole 8 when the thin film forming technique and the etching technique are employed. 0.06 mol / liter, formalin 0.3 mol /
Liter, sodium hydroxide 0.35 mol / l,
A copper layer having a thickness of 1 μm to 40 μm is applied using an electroless copper plating bath composed of 0.35 mol / liter of ethylenediaminetetraacetic acid, and thereafter, the copper layer is processed into a predetermined pattern by an etching method. Between each organic resin insulating layer 2 and through hole 8 in each organic resin insulating layer 2
It is arranged on the inner wall. In this case, since the thin-film wiring conductor 3 is formed by a thin-film forming technique, the wiring can be miniaturized, whereby the thin-film wiring conductor 3 can be formed at an extremely high density.

When the thickness of each organic resin insulating layer 2 exceeds 100 μm, the multi-layer wiring portion 4 employs a photolithography technique in the organic resin insulating layer 2 to form a through hole 8 by using an etching processing time. Becomes longer, making it difficult to form the through hole 8 into a desired sharp shape. If the thickness is less than 5 μm, the bonding strength of the organic resin insulating layer 2 located above and below the organic resin insulating layer 2 is increased. When roughening is performed, there is a risk that unnecessary holes may be formed in the organic resin insulating layer 2 and unnecessary electrical short circuits may occur in the thin film wiring conductors 3 located above and below. Therefore, it is preferable that the thickness of each of the organic resin insulating layers 2 is in the range of 5 μm to 100 μm.

Each of the thin film wiring conductors 2 of the multilayer wiring portion 4
When the thickness is less than 1 μm, the electric resistance of each thin-film wiring conductor 3 becomes large, and it becomes difficult to transmit a predetermined electric signal to each thin-film wiring conductor 3.
If the thickness exceeds 0 μm, when the thin film wiring conductor 3 is applied to the organic resin insulating layer 2, a large stress is present inside the thin film wiring conductor 3, and the thin film wiring conductor 3 is easily peeled off from the organic resin insulating layer 2 due to the intrinsic stress. It will be. Therefore, it is preferable that the thickness of each thin-film wiring conductor 2 of the multilayer wiring section 4 be set in a range of 1 μm to 40 μm.

Further, the surface of the thin film wiring conductor 3 has a center line average roughness (Ra) of 0.05 μm ≦ Ra ≦ 5 μm, and the count value of the height of irregularities (Pc) at a length of 2.5 mm on the surface. 0.01 μm ≦ Pc ≦ 0.1 μm is 3000
If it is roughened so that 0 or more, and 0.1 μm ≦ Pc ≦ 1 μm is 3000 to 10000, and 1 μm ≦ Pc ≦ 10 μm is 500 or less, the bonding between the organic resin insulating layer 2 and the thin film wiring conductor 3 is made. The area becomes extremely large, and as a result, the adhesion between the organic resin insulating layer 2 and the thin film wiring conductor 3 is remarkably improved, and even when an external force is applied to the organic resin insulating layer 2 and the thin film wiring conductor 3, the organic force is reduced by the external force. No separation occurs between the resin insulating layer 2 and the thin-film wiring conductor 3, and the bonding between them can be made extremely strong. Accordingly, the surface of the thin film wiring conductor 3 has a center line average roughness (Ra) of 0.05 μm ≦ Ra ≦ 5 μm, and the count value of the height of irregularities (Pc) at a length of 2.5 mm of the surface is 0. 01μ
m ≦ Pc ≦ 0.1 μm: 30,000 or more, 0.1 μm
≦ Pc ≦ 1 μm: 3000 to 10000, 1 μm
It is preferable to roughen so that ≦ Pc ≦ 10 μm becomes 500 or less.

Further, the organic resin insulating layer 2 has a thin-film resistor layer 10 attached to at least one upper surface thereof, and the thin-film resistor layer 10 is brought into contact with a pair of thin-film wiring conductors 3 at both ends. Thereby, the resistance element A is electrically connected between the thin film wiring conductors 3.

The thin film resistor layer 10 is made of at least one of tantalum nitride, tantalum silicide, nickel chromium, nickel chromium silicide, molybdenum silicide, tungsten silicide, titanium silicide, nickel silicide, chromium silicide, niobium silicate, and tantalum silicate. In other words, by adopting a sputtering method, a vapor deposition method, an etching method, or the like, it is formed between the pair of thin film wiring conductors 3 on the upper surface of the organic resin insulating layer 2.

When the thin film resistor layer 10 is formed of tantalum silicate, it can be formed by firmly joining the thin film resistor layer 10 to the organic resin insulating layer 2. Therefore, it is preferable that the thin film resistor layer 10 is formed of tantalum silicate.

The resistance element A is built in the multilayer wiring section 4 provided on the insulating substrate 1. Therefore, components such as semiconductor elements, capacitance elements and resistance elements are mounted on the multilayer wiring board and mixed. In the case of an integrated circuit device, it is not necessary to separately mount a large number of resistance elements on the multilayer wiring board. As a result, the number of components mounted on the multilayer wiring board is reduced, and the size of the hybrid integrated circuit device is reduced. Becomes possible.

Further, if the thickness of the thin film resistor layer 10 is less than 0.1 μm, defects tend to occur in the thin film resistor layer 10 and it tends to be difficult to obtain stable characteristics.
On the other hand, when the thickness exceeds 5 μm, stress is generated inside the thin film resistor layer 10 when the thin film resistor layer 10 is formed, and the thin film resistor layer 10 tends to be easily separated from the organic resin insulating layer 2 by the stress. Therefore, it is preferable that the thickness of the thin film resistor layer 10 be in the range of 0.1 μm to 5 μm.

Further, the resistance element A formed by bringing a pair of thin film wiring conductors 3 into contact with the thin film resistor layer 10 has an electric resistance value equal to the length of the thin film resistor layer 10 disposed between the pair of thin film wiring conductors 3. And the conductivity of the thin-film resistor layer, and the thin-film resistor layer 1 disposed between the pair of thin-film wiring conductors 3
By changing the length of 0, the electric resistance value of the resistance element A is adjusted to an arbitrary predetermined value.

Thus, according to the multilayer wiring board of the present invention,
For example, a hybrid integrated circuit device is obtained by mounting active components such as semiconductor elements and passive components such as capacitance elements and resistance elements on the multilayer wiring portion 4 attached to the upper surface of the insulating substrate 1, and the lower surface of the insulating substrate 1 Is connected to an external electric circuit, the hybrid integrated circuit device is electrically connected to the external electric circuit.

It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. Is provided only on the upper surface of the substrate, the multilayer wiring portion 4 including the organic resin insulating layer 2 and the thin film wiring conductor 3 is provided. However, the multilayer wiring portion 4 may be provided only on the lower surface side of the insulating substrate 1 or provided on both upper and lower main surfaces. You may.

[0043]

According to the multilayer wiring board of the present invention, since the wiring is formed on the insulating substrate by the thin film forming technique, the wiring can be miniaturized and the wiring can be formed at an extremely high density. .

Further, according to the multilayer wiring board of the present invention, a plurality of organic resin insulating layers and a plurality of thin film wiring conductors are alternately arranged in multiple layers on at least one organic resin insulating layer of a multilayer wiring portion. Since the thin-film resistor layer is applied and at least a part of the pair of thin-film wiring conductors is brought into contact with the thin-film resistor layer, and the resistive element is electrically connected between the thin-film wiring conductors, the semiconductor element is mounted on the multilayer wiring board. When a hybrid integrated circuit device is formed by mounting components such as a capacitor, a resistor, and a resistor, it is not necessary to separately mount a large number of resistors on the multilayer wiring board. The number is reduced, and the size of the hybrid integrated circuit device or the like can be reduced.

[Brief description of the drawings]

FIG. 1 is a sectional view showing one embodiment of a multilayer wiring board of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Insulating board 2 ... Organic resin insulating layer 3 ... Thin film wiring conductor 4 ... Multilayer wiring part 5 ... Through-hole 6 ... Conductive layer 7 ... Organic resin filler 10 ...・ Thin film resistor layer A ・ ・ ・ Resistor element

Claims (3)

[Claims] An insulating substrate having a through hole penetrating both upper and lower main surfaces, a conductive layer extending from an upper surface of the insulating substrate to a lower surface via an inner wall of the through hole, and an organic resin filled in the through hole A filler and a plurality of organic resin insulating layers and a plurality of thin film wiring conductors are alternately disposed on the at least one main surface of the insulating substrate, and a part of the thin film wiring conductor is formed on the conductive layer. A multi-layer wiring board electrically connected to the at least one organic resin insulating layer, wherein a thin-film resistor layer is applied on the at least one organic resin insulating layer, and at least one pair of thin films is formed on the thin-film resistor layer. A multilayer wiring board wherein a part of a wiring conductor is brought into contact and a resistive element is electrically connected between thin film wiring conductors. 2. The thin film resistor is made of at least one of tantalum nitride, tantalum silicide, nickel chromium, nickel chrome silicide, molybdenum silicide, tungsten silicide, titanium silicide, nickel silicide, chromium silicide, niobium silicate, and tantalum silicate. The multilayer wiring board according to claim 1, wherein: 3. A thin film resistor having a thickness of 0.1 μm to 5 μm.
The multilayer wiring board according to claim 1, wherein the thickness is μm.