JP3688844B2 - Multilayer wiring board - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a multilayer wiring board, and more particularly to a multilayer wiring board used for a hybrid integrated circuit device, a semiconductor element housing package for housing semiconductor elements, and the like.
[0002]
[Prior art]
Conventionally, a hybrid integrated circuit device in which a large number of active parts such as semiconductor elements and automatic parts such as capacitive elements and resistors are mounted to form a predetermined electronic circuit is usually provided with tungsten inside and on the surface of an insulating substrate. A wiring board having a structure in which a wiring conductor made of a refractory metal powder such as molybdenum is formed is prepared, and then a semiconductor element, a capacitor element, a resistor, etc. are mounted on the surface of the wiring board, and the semiconductor element, etc. By connecting these electrodes to the wiring conductor, a hybrid integrated circuit device is obtained.
[0003]
Wiring boards used in such conventional hybrid integrated circuit devices are generally manufactured by employing a thick film technology such as a ceramic lamination technique and a screen printing method. Specifically, the wiring board is manufactured by the following method. Yes.
[0004]
That is,
(1) First, a plurality of ceramic raw sheets are obtained by adding and mixing an organic solvent and a solvent to ceramic raw material powder having excellent electrical insulation properties such as alumina, and tungsten, molybdenum, etc. are formed on the upper and lower surfaces of each ceramic raw sheet. A conductive paste made of a refractory metal powder is printed and applied in a predetermined pattern by employing a conventional thick film technique such as a screen printing method.
[0005]
(2) Next, the ceramic raw sheets are laminated to obtain a laminated body, which is fired at a temperature of about 1500 ° C., and has an internal and surface having a wiring conductor made of a refractory metal powder such as tungsten or molybdenum. Get the substrate.
[0006]
(3) Finally, among the wiring conductors, the surface exposed to the atmosphere has excellent corrosion resistance such as nickel and gold, is highly conductive, and has good conductivity and brazing material such as solder and good wettability (reactivity). Is deposited by a plating method, thereby completing a wiring board as a product.
[0007]
[Problems to be solved by the invention]
However, in this conventional wiring substrate, the wiring conductor is formed by printing and applying a conductive paste made of a refractory metal powder such as tungsten or molybdenum to a predetermined pattern using a thick film technique such as screen printing. In addition, the wiring conductor is difficult to be miniaturized, and the wiring conductor cannot be formed at a high density.
[0008]
In addition, this conventional wiring board has a drawback in that a large number of active components such as semiconductor elements and passive components such as capacitors and resistors are mounted on the surface, and the size of the wiring board increases according to the number of components mounted.
[0009]
The present invention has been devised in view of the above-described drawbacks, and the object thereof is to increase the density of the wiring by making the wiring conductor a thin film wiring conductor formed by thin film technology, and to incorporate a capacitive element therein. An object of the present invention is to provide a multilayer wiring board capable of reducing the size of a hybrid integrated circuit device or the like.
[0010]
[Means for Solving the Problems]
The multilayer wiring board of the present invention has a through hole in which organic resin insulating layers and thin film wiring conductor layers are alternately arranged in multiple layers on the substrate, and thin film wiring conductor layers positioned above and below are provided in each organic resin insulating layer. A multilayer wiring board connected via a conductor, wherein a hole is provided in at least one layer of the organic resin insulating layer, a dielectric ceramic is inserted into the hole, and a thickness is formed on the upper and lower surfaces of the dielectric ceramic. A part of the thin film wiring conductor layer is disposed oppositely through an organic resin layer of 2 μm to 40 μm, and a capacitive element is electrically connected between the opposing thin film wiring conductor layers.
[0011]
In the present invention, the organic resin layer has a thickness of 2 μm to 40 μm.
[0012]
Furthermore, the present invention is characterized in that the organic resin layer contains 10 wt% to 95 wt% of a powder composed of at least one of silicon oxide, aluminum oxide, aluminum nitride, titanate compound, and zirconate compound. Is.
[0013]
According to the multilayer wiring board of the present invention, since the wiring conductor is formed by thin film technology, the wiring conductor can be miniaturized, and the wiring conductor can be formed at a very high density.
[0014]
Further, according to the multilayer wiring board of the present invention, a hole is provided in the organic resin insulating layer, a dielectric ceramic is inserted into the hole, and a part of the thin film wiring conductor layer is disposed opposite to the upper and lower surfaces of the dielectric ceramic. Therefore, by adjusting the relative permittivity, thickness, width, and length of the dielectric ceramic, an arbitrary number of capacitive elements having a predetermined capacitance value can be incorporated, and the multilayer wiring board can be equipped with semiconductor elements and capacitors. When a component such as an element or a resistor is mounted to form a hybrid integrated circuit device, it is not necessary to mount a large number of additional capacitive elements on the multilayer wiring board, and as a result, the number of components mounted on the multilayer wiring board is reduced. A hybrid integrated circuit device or the like can be downsized.
[0015]
Further, according to the multilayer wiring board of the present invention, since the organic resin layer is interposed between the upper and lower surfaces of the dielectric ceramic and the thin film wiring conductor layer, the bonding of the dielectric ceramic and the thin film wiring conductor layer by the organic resin layer is performed. This makes it possible to electrically connect a capacitive element having a predetermined capacitance value to a predetermined position of the thin-film wiring conductor layer with high reliability, and a hole provided in the organic resin insulating layer includes a dielectric ceramic and an organic resin. It is possible to form the thin film wiring conductor layer in a predetermined pattern without incurring disconnection or the like with the organic resin insulating layer located on the upper part being flat and flattened by the layer.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
Next, the present invention will be described in detail with reference to the accompanying drawings.
1 and 2 show an embodiment of a multilayer wiring board according to the present invention, where 1 is a substrate and 2 is a multilayer wiring portion.
[0017]
The substrate 1 has a multilayer wiring portion 2 formed by alternately arranging three organic resin insulating layers 3a, 3b, and 3c and three thin film wiring conductor layers 4a, 4b, and 4c on the upper surface thereof, Acts as a support member for supporting the multilayer wiring portion 2.
[0018]
The substrate 1 is an oxide ceramic such as an aluminum oxide sintered body or a mullite sintered body, or a non-oxide type such as an aluminum nitride sintered body or a silicon carbide sintered body having an oxide film on the surface. It is made of an electrically insulating material such as a glass epoxy resin substrate or a bismaleimide triazine substrate obtained by impregnating a ceramic or glass fiber woven cloth with an epoxy resin or a bismaleimide triazine resin. For example, an aluminum oxide sintered body If it is formed by a material powder such as alumina, silica, calcia, magnesia, etc., an appropriate organic solvent and solvent are added and mixed to form a mud, and this is treated with a conventionally known doctor blade method or calender roll method. A ceramic green sheet (ceramic green sheet) is formed by adopting the ceramic ceramic sheet. The green powder is appropriately punched and processed into a predetermined shape and fired at a high temperature (about 1600 ° C), or an appropriate organic solvent and solvent are added to the raw material powder such as alumina to adjust the raw material powder. At the same time, the raw material powder is formed into a predetermined shape by a press molding machine, and finally the molded body is manufactured by firing at a temperature of about 1600 ° C., and is formed of a glass epoxy resin substrate, a bismaleimide triazine substrate, or the like. If a glass fiber woven cloth is impregnated with a plurality of epoxy resin or bismaleimide triazine resin precursors, then the epoxy resin or bismaleimide triazine resin precursor is added at a predetermined temperature. It is manufactured by thermosetting at (100 ° C. to 200 ° C.).
[0019]
Further, the substrate 1 is formed with through holes 5 having a diameter of 300 μm to 500 μm, for example, penetrating through both upper and lower main surfaces. Both ends of the through hole 5 are led out to both upper and lower surfaces of the substrate 1. Layer 6 is applied.
[0020]
The through hole 5 electrically connects a thin film wiring conductor layer 4a of a multilayer wiring portion 2 formed on the upper surface of the substrate 1 to be described later and an external electric circuit, or the multilayer wiring portion 2 on both upper and lower main surfaces of the substrate 1. Is provided as a formation hole for forming the conductive layer 6 for electrically connecting the thin film wiring conductor layers of the multilayer wiring portion 2 on both main surfaces, and a drilling method is applied to the substrate 1. By applying, a predetermined shape is formed at a predetermined position of the substrate 1.
[0021]
Further, the conductive layer 6 deposited on both the inner wall of the through hole 5 and the upper and lower surfaces of the substrate 1 is made of a metal material such as copper or nickel, and penetrates by employing a conventionally known plating method and etching method. It is deposited on the inner wall of the hole 5 with both ends led out to the upper and lower surfaces of the substrate 1.
[0022]
The conductive layer 6 electrically connects the thin film wiring conductor layer 3a of the multilayer wiring portion 2 disposed on the main surface of the substrate 1 to an external electric circuit, or is disposed on both the upper and lower main surfaces of the substrate 1. The thin film wiring conductor layers of the multilayer wiring portion 2 are electrically connected to each other.
[0023]
The through hole 5 formed in the substrate 1 is filled with an organic resin filler 7 made of an epoxy resin, and the through hole 5 is completely filled with the organic resin filler 7, and at the same time, the organic resin filler 7, both end surfaces are flush with the surface of the conductive layer 6 deposited on the upper and lower main surfaces of the substrate 1.
[0024]
The organic resin filler 7 forms a multilayer wiring portion 2 composed of a plurality of organic resin insulating layers 3a, 3b and 3c, which will be described later, and a plurality of thin film wiring conductor layers 4a, 4b and 4c on the upper surface and / or the lower surface of the substrate 1. In this case, the organic resin insulating layers 3a, 3b, and 3c of the multilayer wiring portion 2 and the thin film wiring conductor layers 4a, 4b, and 4c are maintained flat.
[0025]
The organic resin filler 7 is filled with a precursor of epoxy resin in the through-hole 5 of the substrate 1, and then a temperature of 80 ° C. to 200 ° C. is applied to this for 0.5 to 3 hours to completely The through holes 5 of the substrate 1 are filled by thermosetting.
[0026]
Further, the substrate 1 is provided with a multilayer wiring part 2 in which three organic resin insulating layers 3a, 3b, 3c and three thin film wiring conductor layers 4a, 4b, 4c are alternately arranged in multiple layers on the upper surface. The thin-film wiring conductor layer 4a is electrically connected to the conductive layer 6.
[0027]
The organic resin insulating layers 3a, 3b, 3c constituting the multilayer wiring portion 2 serve to electrically insulate the thin film wiring conductor layers 4a, 4b, 4c located above and below, and the thin film wiring conductor layers 4a, 4b, 4c acts as a transmission path for transmitting electrical signals.
[0028]
Each of the organic resin insulating layers 3a, 3b, 3c of the multilayer wiring portion 2 is made of an organic resin such as an epoxy resin, a bismaleimide polyazide resin, a polyphenylene ether resin, or a fluorine resin. Type epoxy resin, novolac type epoxy resin, glycidyl ester type epoxy resin, etc., and adding a curing agent such as amine curing agent, imidazole curing agent, acid anhydride curing agent, etc. to obtain a pasty epoxy resin precursor At the same time, the epoxy resin precursor is deposited on the upper portion of the substrate 1 by a spin coating method, and thereafter, this is heat-treated at 80 to 200 ° C. for 0.5 to 3 hours and thermally cured.
[0029]
Each of the organic resin insulation layers 3a, 3b, 3c has a through hole 8 having a minimum diameter of about 1.5 times the thickness of the organic resin insulation layer 2 at a predetermined position. The hole 8 functions as a formation hole for forming a through-hole conductor 9 that electrically connects each of the thin film wiring conductor layers 3 positioned above and below via the organic resin insulating layer 2 described later.
[0030]
The through holes 8 provided in each of the organic resin insulating layers 3a, 3b, 3c are, for example, photolithography technology, specifically, applying a resist material on each of the organic resin insulating layers 3a, 3b, 3c, and exposing and developing the resist material. To form a window portion having a predetermined shape at a predetermined position, and then an etching solution is disposed on the window portion of the resist material to remove the organic resin insulating layers 3a, 3b, and 3c located at the window portion of the resist material. Then, holes (through holes) are formed in the organic resin insulating layers 3a, 3b, and 3c, and finally, the resist material is peeled off and removed from the organic resin insulating layers 3a, 3b, and 3c.
[0031]
Furthermore, thin film wiring conductor layers 4a, 4b, and 4c having a predetermined pattern are formed on the upper surfaces of the organic resin insulating layers 3a, 3b, and 3c, and through holes 8 provided in the organic resin insulating layers 3a, 3b, and 3c. Through-hole conductors 9 are respectively disposed on the inner wall, and the thin-film wiring conductor layers 4a, 4b, and 4c positioned above and below with the through-hole conductors 9 sandwiching the organic resin insulating layers 3a, 3b, and 3c. Connected.
[0032]
The thin film wiring conductor layers 4a, 4b, 4c and the through-hole conductor 9 disposed on the upper surfaces of the organic resin insulating layers 3a, 3b, 3c and the inner wall of the through-hole 8 are made of a metal material such as copper, nickel, gold, aluminum, etc. Is formed by employing thin film technology such as electroless plating, vapor deposition, sputtering, etc., and photolithography technology, for example, when formed of copper, the upper surfaces of the organic resin insulating layers 3a, 3b, 3c And electroless copper comprising 0.06 mol / liter of copper sulfate, 0.3 mol / liter of formalin, 0.35 mol / liter of sodium hydroxide and 0.35 mol / liter of ethylenediaminetetraacetic acid on the inner surface of the through hole 8 A copper layer having a thickness of 1 μm to 40 μm is deposited using a plating bath, and then the copper layer is subjected to a predetermined pattern by a photolithography technique. Are processed between the organic resin insulating layers 3a, 3b, 3c and the inner wall of the through hole 8. In this case, since the thin-film wiring conductor layers 4a, 4b, 4c and the through-hole conductor 9 are formed by thin film technology, the wiring can be miniaturized. Can be formed.
[0033]
When the thickness of each organic resin insulating layer 3a, 3b, 3c exceeds 100 μm, the multilayer wiring part 2 forms a through hole 8 by adopting a photolithography technique in each organic resin insulating layer 3a, 3b, 3c. At this time, it becomes difficult to form the through-hole 8 in a desired clear shape due to a long etching processing time, and when the thickness is less than 5 μm, the organic layers positioned above and below the organic resin insulating layers 3a, 3b, and 3c. When roughening the surface to increase the bonding strength of the resin insulation layer, unnecessary holes are formed in the organic resin insulation layers 3a, 3b, and 3c, and unnecessary for the thin film wiring conductor layers 4a, 4b, and 4c positioned above and below. There is a risk of causing an electrical short circuit. Therefore, it is important that the thickness of each of the organic resin insulating layers 3a, 3b, and 3c is in the range of 5 μm to 100 μm.
[0034]
Further, when the thickness of each thin film wiring conductor layer 4a, 4b, 4c of the multilayer wiring portion 2 is less than 1 μm, the electric resistance value of each thin film wiring conductor layer 4a, 4b, 4c becomes large, and each thin film wiring conductor layer. It becomes difficult to transmit a predetermined electrical signal to 4a, 4b, 4c, and when it exceeds 40 μm, the thin film wiring conductor layers 4a, 4b, 4c are deposited on the organic resin insulating layers 3a, 3b, 3c. A large stress is present inside the conductor layers 4a, 4b, and 4c, and the thin internal wiring conductor layers 4a, 4b, and 4c are easily peeled off from the organic resin insulating layers 3a, 3b, and 3c due to the large inherent stress. Therefore, it is preferable that the thickness of each thin-film wiring conductor layer 4a, 4b, 4c of the multilayer wiring portion 2 is in the range of 1 μm to 40 μm.
[0035]
Furthermore, the multilayer wiring portion 2 formed by the organic resin insulating layers 3a, 3b, 3c and the thin film wiring conductor layers 4a, 4b, 4c has a hole H in the organic resin insulating layer 3b and the hole. The dielectric ceramic 10 is inserted into the portion H, and the capacitive element A is formed by sandwiching the dielectric ceramic 10 with a part of the thin-film wiring conductor layers 4a and 4b disposed on both upper and lower surfaces thereof. The capacitive element A is electrically connected to the thin film wiring conductor layers 4a and 4b.
[0036]
The hole H formed in the organic resin insulating layer 3b functions as a space for accommodating the dielectric ceramic 10, and a method similar to that for forming the through hole 8 in the organic resin insulating layer 3b, specifically, In this case, a resist material is applied onto the organic resin insulating layer 3b, and a window portion having a predetermined shape is formed at a predetermined position by exposing and developing the resist material. Next, an etching solution is disposed on the window portion of the resist material. Then, the organic resin insulating layer 3b located in the window portion of the resist material is removed to form a hole H in the organic resin insulating layer 3b, and finally the resist material is peeled off from the organic resin insulating layer 3b and removed. Is done by.
[0037]
The dielectric ceramic 10 inserted into the hole H of the organic resin insulating layer 3b is made of a ceramic having a high relative dielectric constant such as barium titanate, strontium titanate, calcium titanate, magnesium titanate, etc. When it is made of barium acid, raw powders such as barium carbonate, titanium oxide, and magnesium titanate are calcined and reacted to obtain barium titanate, which is then pulverized into fine powder and mixed with an appropriate organic solvent and solvent. The slurry is made into a green sheet, and finally, the slurry is made into a green sheet by a doctor blade method, a calender roll method, or the like, and fired at a high temperature.
[0038]
Capacitor element A formed by sandwiching the upper and lower surfaces of dielectric ceramic 10 inserted into hole H of organic resin insulating layer 3b with a portion of thin-film wiring conductor layers 4a and 4b has a capacitance value of dielectric. The relative dielectric constant of the dielectric ceramic 10, the thickness of the dielectric ceramic 10, and the facing area of the thin film wiring conductor layers 4a and 4b across the dielectric ceramic 10, are determined by the relative dielectric constant of the dielectric ceramic 10 and the dielectric ceramic 10. A predetermined capacitance value can be obtained by adjusting the thickness or the like.
[0039]
The capacitive element A is built in the multilayer wiring portion 2 provided on the substrate 1, and therefore, components such as a semiconductor element, a capacitive element, a resistor, etc. are mounted on the multilayer wiring board, and a hybrid integrated circuit device or the like. In this case, it is not necessary to separately mount and mount a large number of capacitive elements on the multilayer wiring board. As a result, the number of components mounted on the multilayer wiring board is reduced, and the hybrid integrated circuit device and the like can be reduced in size. Become.
[0040]
Further, the capacitive element A formed by opposingly sandwiching the upper and lower surfaces of the dielectric ceramic 10 with a part of the thin film wiring conductor layers 4a and 4b, as shown in FIG. 2, includes the upper and lower surfaces of the dielectric ceramic 10 and the thin film wiring conductor layer 4a, The organic resin layer 11 is arranged between 4b.
[0041]
The organic resin layer 11 has a function of firmly bonding the thin film wiring conductor layers 4 a and 4 b to the upper and lower surfaces of the dielectric ceramic 10 and completely filling the hole H provided in the organic resin insulating layer 3 b with the dielectric ceramic 10. None. This makes it possible to electrically connect the capacitive element A having a predetermined capacitance value to a predetermined position of the thin-film wiring conductor layers 4a and 4b with high reliability, and organically positioned above the organic resin insulating layer 3b. The resin insulating layer 3c is flat, and the thin-film wiring conductor layers 4b, 4c and the like can be formed in a predetermined pattern without causing disconnection or the like.
[0042]
The organic resin layer 11 is made of the same material as the organic resin insulating layer 3b, specifically, an organic resin such as an epoxy resin, a bismaleimide polyazide resin, a polyphenylene ether resin, or a fluorine resin. Paste epoxy resin precursor by adding and mixing curing agents such as amine curing agent, imidazole curing agent, acid anhydride curing agent to bisphenol A type epoxy resin, novolak type epoxy resin, glycidyl ester type epoxy resin, etc. And the epoxy resin precursor is filled into the hole H of the organic resin insulating layer 3b, and then the dielectric ceramic 10 is inserted into the hole H of the organic resin insulating layer 3b. An appropriate amount of the epoxy resin precursor is filled again at the top, and finally the epoxy resin precursor is heated at a temperature of 80 to 200 ° C. And management, upper and lower surfaces and thin-film wiring conductor layer 4a of the dielectric ceramic 10 by thermally curing, disposed between the 4b.
[0043]
The organic resin layer 11 has a thickness of 2 μm to 40 μm. If the thickness is less than 2 μm, the bonding between the upper and lower surfaces of the dielectric ceramic 10 and the thin film wiring conductor layers 4a and 4b tends to be weakened. If it exceeds 40 μm, the capacitance value of the capacitive element A connected between the thin-film wiring conductor layers 4a and 4b becomes small, and there is a risk that it is difficult to incorporate the capacitive element A having a large capacitance value. . Therefore, the organic resin layer 11 preferably has a thickness in the range of 2 μm to 40 μm.
[0044]
Furthermore, when the organic resin layer 11 contains 10 wt% to 95 wt% of a powder composed of at least one of silicon oxide, aluminum oxide, aluminum nitride, titanate compound, and zirconate compound, the organic resin layer A large amount of minute irregularities are formed on the surface of the substrate 11 to increase the bonding area between the thin-film wiring conductor layers 4a and 4b and the organic resin layer 11, thereby greatly improving the bonding strength between the two and the organic resin. The thermal expansion coefficient of the layer 11 is adjusted, and when heat is applied, the organic resin layer 11 expands and protrudes from the hole H and presses the thin film wiring conductor layers 4a and 4b positioned above and below the thin film wiring conductor layer 4a. It is possible to effectively prevent 4b from causing a disconnection or the like. Therefore, it is preferable that the organic resin layer 11 is added and mixed with powder composed of at least one of silicon oxide, aluminum oxide, aluminum nitride, titanate compound, and zirconate compound.
[0045]
Furthermore, when powders made of silicon oxide, aluminum oxide, aluminum nitride, titanate compound, zirconate compound, etc. are added and mixed in the organic resin layer 11, it is organic if the added amount is less than 10% by weight. The coefficient of thermal expansion of the resin layer 11 cannot be adjusted sufficiently, and part of the organic resin layer 11 expands and protrudes above and below the hole H by the application of heat, and the thin film wiring conductor layers 4a and 4b are disconnected. There is a risk of inviting it, and when it exceeds 95% by weight, the strength of the organic resin layer 11 may be deteriorated. Therefore, when the powder made of silicon oxide, aluminum oxide, aluminum nitride, titanate compound, zirconate compound or the like is added and mixed in the organic resin layer 11, the added amount of the powder is 10 wt% to 95 wt%. The range of is preferable.
[0046]
Thus, according to the multilayer wiring board described above, the electrodes of the electronic component A such as a semiconductor element or a capacitive element are connected to the bonding pad 10 provided on the upper surface of the uppermost organic resin insulating layer 2 by thermocompression bonding or the like. When the electrode is electrically connected to the thin film wiring conductor layer 3 through the bonding pad 10, a semiconductor device or a hybrid integrated circuit device is obtained. When a part of the thin film wiring conductor layer 3 is connected to an external electric circuit, the electronic component A is obtained. Will be connected to the external electric circuit.
[0047]
It should be noted that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. For example, in the above-described embodiment, only the upper surface side of the substrate 1 is possible. A multilayer wiring portion 2 formed by alternately laminating a plurality of organic resin insulating layers 3a, 3b, and 3c and a plurality of thin film wiring conductor layers 4a, 4b, and 4c is attached. It may be provided only on the lower surface side of the substrate 1 or may be provided on both upper and lower main surfaces.
[0048]
Further, in the above-described embodiment, the multilayer wiring portion 2 formed by alternately arranging the organic resin insulating layers 3a, 3b, and 3c and the thin film wiring conductor layers 4a, 4b, and 4c in the multilayer is provided in each organic resin insulating layer 3a. If the top surfaces of 3b and 3c are rough surfaces with a center line average roughness (Ra) of 0.05 μm ≦ Ra ≦ 5 μm, the organic resin insulating layers 3a, 3b and 3c and the thin-film wiring conductor layers 4a, 4b and 4c Bonding and bonding between the organic resin insulating layers 3a, 3b, and 3c positioned above and below can be strengthened. Accordingly, the upper surfaces of the organic resin insulating layers 3a, 3b, and 3c of the multilayer wiring portion 2 are roughened by an etching method or the like so that the centerline average roughness (Ra) is 0.05 μm ≦ Ra ≦ 5 μm. It is preferable to keep it.
[0049]
Further, the organic resin insulating layers 3a, 3b, 3c have a count value of the height of unevenness (Pc) in the length of 2.5 mm on the surface thereof, 1 μm ≦ Pc ≦ 10 μm is 500 or more, 0.1 μm ≦ Pc ≦ When 1 μm is 2500 or more, and 0.01 μm ≦ Pc ≦ 0.1 μm is 12500 or more, the organic resin insulating layers 3a, 3b, 3c and the thin film wiring conductor layers 4a, 4b, 4c are joined and the organic resin positioned above and below The bonding between the insulating layers 3a, 3b, and 3c becomes stronger. Accordingly, the organic resin insulating layers 3a, 3b, 3c have a count value of the height of the unevenness (Pc) at a length of 2.5 mm on the surface thereof, 1 μm ≦ Pc ≦ 10 μm is 500 or more, 0.1 μm ≦ Pc It is preferable that ≦ 1 μm is 2500 or more, and 0.01 μm ≦ Pc ≦ 0.1 μm is 12500 or more.
[0050]
The center line average roughness (Ra) is 0.05 μm ≦ Ra ≦ 5 μm, and the count value of the height of irregularities (Pc) at a length of 2.5 mm is 500 μm or more when 1 μm ≦ Pc ≦ 10 μm, 0.1 μm ≦ Pc ≦ 1 μm is 2500 or more, and 0.01 μm ≦ Pc ≦ 0.1 μm is 12500 or more. The organic resin insulation layers 3a, 3b, and 3c are formed on the top surface of the organic resin insulation layers 3a, 3b, and 3c with CHF. _Three , CF _Four The surface is roughened to a predetermined roughness by performing a reactive ion etching process by blowing a gas such as Ar.
[0051]
The count values of the center line average roughness (Ra) on the top surfaces of the organic resin insulating layers 3a, 3b, 3c and the unevenness height (Pc) at a length of 2.5 mm are the organic resin insulating layers 3a, 3b, The surface of 3c is scanned with a 50 μm square diagonal (70 μm) with an atomic force microscope (Dimension 3000-Nano Scope III manufactured by Digital Instruments Inc.), and the surface state is inspected and measured. Issued.
[0052]
【The invention's effect】
According to the multilayer wiring board of the present invention, since the wiring is formed on the substrate by the thin film technique, the wiring can be miniaturized and the wiring can be formed at a very high density.
[0053]
Further, according to the multilayer wiring board of the present invention, a hole is provided in the organic resin insulating layer, a dielectric ceramic is inserted into the hole, and a part of the thin film wiring conductor layer is disposed opposite to the upper and lower surfaces of the dielectric ceramic. Therefore, by adjusting the relative permittivity, thickness, width, and length of the dielectric ceramic, an arbitrary number of capacitive elements having a predetermined capacitance value can be incorporated, and the multilayer wiring board can be equipped with semiconductor elements and capacitors. When a component such as an element or a resistor is mounted to form a hybrid integrated circuit device, it is not necessary to mount a large number of additional capacitive elements on the multilayer wiring board, and as a result, the number of components mounted on the multilayer wiring board is reduced. A hybrid integrated circuit device or the like can be downsized.
[0054]
Further, according to the multilayer wiring board of the present invention, since the organic resin layer is interposed between the upper and lower surfaces of the dielectric ceramic and the thin film wiring conductor layer, the bonding of the dielectric ceramic and the thin film wiring conductor layer by the organic resin layer is performed. This makes it possible to electrically connect a capacitive element having a predetermined capacitance value to a predetermined position of the thin-film wiring conductor layer with high reliability, and a hole provided in the organic resin insulating layer includes a dielectric ceramic and an organic resin. It is possible to form the thin film wiring conductor layer in a predetermined pattern without incurring disconnection or the like by completely filling the organic resin insulating layer located on the upper layer and flattening the organic resin insulating layer located above.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing an embodiment of a multilayer wiring board according to the present invention.
FIG. 2 is an enlarged cross-sectional view of a main part of the multilayer wiring board shown in FIG.
[Explanation of symbols]
1 ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ Board
2 ..... multilayer wiring part
3a, 3b, 3c ... Organic resin insulation layer
4a, 4b, 4c... Thin film wiring conductor layer
8 ... through hole
9 .... Through-hole conductor
10 ... Dielectric porcelain
11 ... Organic resin layer
A ... Capacitance element
H ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ Hole

Claims (3)

On the substrate, organic resin insulation layers and thin film wiring conductor layers are alternately arranged in multiple layers, and upper and lower thin film wiring conductor layers are connected via through-hole conductors provided in each organic resin insulation layer. a multilayer wiring board, the organic resin a hole portion is provided in at least one layer of the insulating layer, an organic resin 2μm~40μm thickness on the upper and lower surfaces of the dielectric porcelain together when inserting the dielectric ceramic in the hole portion multi-layer wiring board, wherein a portion of and through a layer thin film wiring conductor layer was opposed to electrically connect the capacitive element to the thin film wiring conductor layers of the facing. The multilayer wiring board according to claim 1, wherein the organic resin layer has a thickness of 2 μm to 40 μm. 2. The organic resin layer according to claim 1, wherein the organic resin layer contains 10 wt% to 95 wt% of a powder composed of at least one of silicon oxide, aluminum oxide, aluminum nitride, titanate compound, and zirconate compound. Multilayer wiring board.

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