JPH1041357A - Tape carrier for semiconductor device, tape carrier type semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the chip damage, without increasing the thickness of Au plating on inner leads. SOLUTION: The semiconductor device tape carrier 10 has a conductor lead pattern 13 on one surface of an insulation film 12. The pattern 13 is made from a soft Cu foil of 130 or less in Vickers hardness. The inner leads 13a of the lead pattern 13 relax the stress at bonding by themselves to thereby prevent the chip damage. Since an Au plating 15 on the inner leads 13a is not made thick beyond need, the cost can be reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a tape carrier for semiconductor devices, a tape carrier type semiconductor device, and a method for manufacturing a tape carrier type semiconductor device.

[0002]

2. Description of the Related Art TAB (Tape A) is one of the IC mounting technologies.
utomated Bonding) method. This is, for example, 35m
In this method, a lead pattern formed by photo-etching a copper foil adhered on an m-width film tape and a bonding electrode pad on the surface of a semiconductor element are thermocompression-bonded.

The TAB method of directly connecting the inner lead of the tape carrier and the semiconductor element has features such as a narrow pitch connection and a thinner and smaller package than the wire bonding method. Widely used for TCP (Tape Carrier Package) mainly in multi-pin LSI. Recently, it has also been applied to a BGA (Ball Grid Array) type package in which external terminals are formed of solder balls.

FIG. 3 is a schematic sectional view of a TCP type package as a conventional tape carrier type semiconductor device.

A semiconductor device tape carrier (hereinafter, referred to as a “tape carrier”) 1 includes a base film 2 and a lead pattern 3 formed on the surface of the base film 2, and inner leads 3 a of the lead pattern 3 are opened in the base film 2. It is formed so as to protrude toward the inside of the device hole 4 formed. The inner lead 3a is plated on its surface, and is thermocompression-bonded to a protruding Au bump 7 provided on the bonding electrode pad 6 of the semiconductor element 5 by a gang bonding (batch bonding) method or a single point bonding method. It is connected. After the thermocompression connection, the semiconductor element 5 is connected to the inner lead 3a.
The TCP type package is formed by sealing the connection portion with the resin 8 in the device hole 4.

[0006]

According to the prior art shown in FIG. 3, the semiconductor device 5 is pressed from the bonding tool via the inner leads 3a during pressure bonding.
The soft Au bumps 7 alleviate the stress applied to the semiconductor device 5 and the effect of suppressing the damage (chip damage) of the semiconductor element 5 can be obtained. However, the semiconductor element 5 with the Au bump requires more manufacturing steps than a normal semiconductor element. In addition, it is expensive and may be difficult to obtain.

For this reason, a bumpless bonding method in which an Au plating inner lead is directly bonded to a bonding electrode pad made of Al without providing an Au bump on a semiconductor element has recently been proposed. In order to prevent chip damage due to the above, it is necessary to make the Au plating thickness of the inner leads of the tape carrier considerably thicker than the bonding to the chip with bumps, which is not always cost-effective.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to solve the above-mentioned problems, and to provide a tape carrier for a semiconductor device, a tape carrier type semiconductor device, and a tape carrier which can prevent chip damage without increasing the Au plating thickness of the inner lead. To provide a method of manufacturing a semiconductor device.

[0009]

To achieve the above object, a tape carrier for a semiconductor device according to the present invention is a tape carrier for a semiconductor device having a lead pattern made of a conductor on one surface of an insulating film. It is made of soft copper having a Vickers hardness of 130 or less, and has at least Au plating or Au plating under Ni on the surface of the inner lead connected to the bonding electrode pad on the surface of the semiconductor element.

In addition to the above structure, the tape carrier for a semiconductor device of the present invention preferably uses a rolled copper foil having a softening temperature of 200 ° C. or less as a conductor, and softens the inner leads by heat treatment before the semiconductor element bonding step. .

Further, in the tape carrier type semiconductor device of the present invention, an inner lead of a tape carrier for a semiconductor device having a lead pattern made of a conductor on one surface of an insulating film is connected to a bonding electrode pad on the surface of the semiconductor element. In the tape carrier type semiconductor device, the conductor of the tape carrier is made of soft copper having a Vickers hardness of 130 or less, and at least the surface of the inner lead connected to the bonding electrode pad is made of Au or Ni base Au.
The plating is performed, and the inner leads and the bonding electrode pads are connected by thermocompression bonding.

In addition to the above configuration, in the tape carrier type semiconductor device of the present invention, the electrode pads of the semiconductor element are preferably Al film electrode pads having no Au bump formed on the surface.

Further, according to the method of manufacturing a tape carrier type semiconductor device of the present invention, an inner lead of a tape carrier for a semiconductor device having a lead pattern made of a conductor on one surface of an insulating film; In the method of manufacturing a tape carrier type semiconductor device, a rolled copper foil having a softening temperature of 200 ° C. or lower is used as a conductor of the tape carrier, and the inner leads are softened by a heat treatment before the semiconductor element bonding step.

According to the above configuration, since the lead pattern is made of a soft copper foil, the stress at the time of bonding is reduced by the inner lead itself, thereby preventing chip damage. Further, since the thickness of the Au plating of the inner lead is not made unnecessarily thick, the cost can be reduced.

[0015]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

FIG. 1 is a partial sectional view of a semiconductor device tape carrier of the present invention, and FIG. 2 is a sectional view of a tape carrier type semiconductor device using the semiconductor device tape carrier shown in FIG.

A tape carrier 1 for a semiconductor device shown in FIG.
Reference numeral 0 denotes a lead pattern 13 made of soft copper bonded to one surface (upper surface in the figure) of a polyimide film 12 as an insulating film having a device hole 11 formed in the center with an epoxy adhesive 14. Lead pattern 1
Au plating (or Ni plating Au plating) on the surface of 3
5 is given. The dashed line L16 indicates the semiconductor element 1.
The position of the bonding electrode pad 17 of the semiconductor element 16 is indicated by a dashed line L17.

In FIG. 2, the bonding electrode pad 17 of the semiconductor element 16 and the inner lead 1 are arranged in the device hole 11 of the tape carrier 10 for a semiconductor device.
3a is connected. Bonding electrode pad 17
Since there is no Au bump 7 as shown in FIG. 3 above, the inner leads 13a
Is bent in a substantially crank shape. This is because the inner lead 13a is bent by the stress at the time of bonding, so that the impact on the semiconductor element 16 is reduced. The tape carrier type semiconductor device 19 is formed by sealing the semiconductor element 16 with the resin 18 together with the connection portion of the inner lead 13a.

Here, the lead pattern 13 made of copper foil is used.
Is preferably 130 or less in Vickers hardness at the time of bonding. This is because an electrolytic copper foil usually used for a TAB tape carrier is unsuitable because it has high hardness and has a property of not easily softening by heat treatment. Therefore, by using a rolled copper foil that can be softened at a low temperature, heat treatment is performed before the chip bonding in the copper foil manufacturing process, the tape carrier manufacturing process, or at the stage of the completed tape carrier, so that the Vickers hardness is reduced to 130 or less. It is desirable. The semiconductor element 16 has A
It is desirable to configure a semiconductor device using a normal semiconductor element having no u bump. Further, the thickness of the Au plating may be a minimum required thickness.

Next, a method for manufacturing the tape carrier for a semiconductor device shown in FIG. 1 will be described by comparing an embodiment with a comparative example.

An approximately 75 μm thick polyimide film 12 having an epoxy adhesive 14 on one surface is pressed to form openings such as device holes 11 and sprocket holes (not shown). OFC
(Oxygen-free copper) Laminated rolled foil using a hot roll,
In order to cure the epoxy-based adhesive 14, the laminate was heated for four hours under two conditions of about 150 ° C. and 170 ° C., respectively, to produce two types of laminated tapes. Next, a lead pattern 13 including an inner lead 13a having a width of 40 μm is formed by a photoetching method, and an Au plating 15 having a thickness of about 1 μm is applied to the surface of the lead pattern 13 to thereby obtain a semiconductor device as shown in FIG. Tape carrier 10 is obtained.

As a comparative example, a conductor is made of electrolytic copper foil (electrolytic VLP).
A tape carrier for a semiconductor device was produced by using the above-described method. Heat treatment condition for curing adhesive is 170 ℃ × 4
Time, about 1μm, 3μm about Au plating thickness
Were compared.

Table 1 shows the results of the comparison.

[0024]

[Table 1]

Next, under the optimum conditions, the hardness of the lead pattern and the bonding property were evaluated. For evaluation of the bonding property, a semiconductor element for wire bonding using only a bonding electrode pad made of Al was used, and a single point bonder of a thermocompression bonding method using ultrasonic waves was used.
Bonding was performed under the conditions of 230 ° C. and a tool load of 30 to 50 g. The evaluation was made based on the bond peeling rate by a lead tensile test and the crack generation rate by observing the bonding electrode pad after removing the lead.

As is clear from Table 1, in the comparative example using the hard electrolytic copper foil, it is difficult to achieve both the bonding strength and the suppression of the chip damage when the Au plating thickness is small. Need to be thicker,
It can be seen that in the present embodiment, good bonding properties can be obtained even when the Au plating thickness is small.

In the above, according to the present embodiment, since the lead pattern is made of a soft copper foil, the stress at the time of bonding is reduced by the inner lead itself, so that chip damage is effectively prevented. Also, in bumpless bonding, it is not necessary to increase the Au plating thickness of the tape carrier, so that chip (semiconductor element) costs and tape carrier costs can be significantly reduced. Furthermore, in both cases of using a chip with bumps and a bumpless chip, the range of suitable bonding conditions is expanded, so that connection reliability and yield are improved.

In the present embodiment, a description has been given of a case of a normal semiconductor element not using an Au bump. However, the present invention is not limited to this, and a semiconductor element with a TAB bump may be used as a semiconductor element. For example, it is effective in suppressing chip damage caused by variations in bump height in gang bonding and poor balance of the tool bonding surface. Further, the present invention may be applied to a semiconductor package such as a TCP and a tape BGA on which a semiconductor element is mounted using a TAB tape carrier.

[0029]

In summary, according to the present invention, the following excellent effects are exhibited.

In a tape carrier for a semiconductor device, the lead pattern is made of soft copper having a Vickers hardness of 130 or less, and at least Au plating or Au under Ni plating is applied to the surface of the inner lead to reduce stress at the time of bonding. Therefore, chip damage can be prevented without increasing the Au plating thickness of the inner lead.

[Brief description of the drawings]

FIG. 1 is a partial cross-sectional view of a tape carrier for a semiconductor device of the present invention.

FIG. 2 is a sectional view of a tape carrier type semiconductor device using the semiconductor device tape carrier shown in FIG. 1;

FIG. 3 is a schematic sectional view of a conventional tape carrier type semiconductor device.

[Explanation of symbols]

 Reference Signs List 10 Tape carrier for semiconductor device (tape carrier) 12 Insulating film (polyimide film) 13 Lead pattern 13a Inner lead 15 Au plating

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Katsutoshi Taga 3550 Kida Yomachi, Tsuchiura-shi, Ibaraki Hitachi Cable, Ltd. System Materials Research Laboratories (72) Inventor Mamoru Mita 3-1-1 Sukegawa-cho, Hitachi-shi, Ibaraki (72) Inventor Ichiro Yasuo Hitachi Cable Co., Ltd.

Claims (5)

[Claims] 1. A tape carrier for a semiconductor device having a lead pattern made of a conductor on one surface of an insulating film, wherein the conductor is made of soft copper having a Vickers hardness of 130 or less, and is provided with a bonding electrode pad on the surface of the semiconductor element. At least Au is attached to the surface of the inner lead to be connected.
A tape carrier for a semiconductor device, which is plated or plated with Ni under Au. 2. The tape carrier for a semiconductor device according to claim 1, wherein a rolled copper foil having a softening temperature of 200 ° C. or less is used as the conductor, and the inner leads are softened by heat treatment at a stage before the semiconductor element bonding step. 3. A tape carrier type semiconductor device in which an inner lead of a tape carrier for a semiconductor device having a lead pattern made of a conductor on one surface of an insulating film is connected to a bonding electrode pad on a surface of a semiconductor element. Carrier conductor is 1 in Vickers hardness
30 or less of soft copper, and at least the surface of the inner lead connected to the bonding electrode pad is Au
Alternatively, a tape carrier type semiconductor device, which is plated with Ni and plated with Au, and wherein the inner lead and the bonding electrode pad are connected by thermocompression bonding. 4. The electrode pad of the semiconductor element has a surface
4. The tape carrier type semiconductor device according to claim 3, wherein the tape carrier type semiconductor device is an Al film electrode pad on which no u bump is formed. 5. A method of manufacturing a tape carrier type semiconductor device for connecting an inner lead of a tape carrier for a semiconductor device having a lead pattern made of a conductor on one surface of an insulating film to a bonding electrode pad on a surface of a semiconductor element. A method of manufacturing a tape carrier type semiconductor device, wherein a rolled copper foil having a softening temperature of 200 ° C. or less is used as a conductor of the tape carrier, and the inner leads are softened by heat treatment at a stage prior to a semiconductor element bonding step.