JPH10326847A - Manufacture of semiconductor package - Google Patents

Abstract

PROBLEM TO BE SOLVED: To raise the reliability of the thermal cycle of a semiconductor package by a method, wherein a solid material is filled in cavities formed in the inside of a through hole plated film, a gold-plated layer is formed on the surface of a conductor used as one part of a contact circuit on the surface on one side of the surfaces of a substrate, and a gold-plated layer is formed on the surface of a conductor used as one part of a bonding circuit on the other surface of the substrate. SOLUTION: A solid material 18 is filled in cavity parts formed in the inside of a through hole plated film 15, and the whole surface of a substrate 10 formed with a dam frame 11 is masked with a first resist film 19a. At this time, the whole surface is masked in such a way that a conductor 22 used as one part of a contact circuit is exposed. A gold-plated layer 17 is formed on the surface of the conductor 22 used as one part of this contact circuit to manufacture the contact circuit 13. The whole surface in the opposite side to the surface of the substrate 10 formed with the dam frame 11 is masked with a second resist film 19b. At this time, the entire surface is masked in such a way that a conductor 21 used as one part of a bonding circuit and the like are exposed. A gold-plated layer 16 is formed on the surface of this conductor 21, and the bonding circuit 12 is manufactured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for manufacturing a semiconductor package used for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art The number of terminals for mounting a semiconductor device on a printed wiring board tends to increase as the functions of the semiconductor device become more sophisticated. Therefore, as in a semiconductor device called a PGA (pin grid array) semiconductor device or a semiconductor device called a BGA (ball grid array) semiconductor device, a semiconductor element housing portion is formed on one surface of a substrate,
Using a semiconductor package having a plurality of terminals formed on the surface or the other surface of the substrate, the semiconductor element is mounted in the semiconductor element housing, and then the semiconductor element and the semiconductor element housing are sealed with a sealing material such as an epoxy resin composition. A semiconductor device in which is sealed has been put to practical use.

[0003] As a method of mounting a semiconductor element in these semiconductor packages, a semiconductor element is housed in a semiconductor element accommodating portion of a substrate, and then a bonding wire is used for bonding of a circuit provided on a surface layer of the substrate using a bonding wire. 2. Description of the Related Art A method of connecting a semiconductor element with a circuit for bonding with a wire (hereinafter referred to as a bonding circuit) is generally used.

In general, a bonding circuit has a gold plating layer formed on its surface so as to be suitable for bonding with a bonding wire such as a gold wire.
In general, a gold plating layer called soft gold plating having a high gold content and a low hardness is formed.

As a method of sealing a semiconductor element with a sealing material, for example, as shown in FIG. 3, an annular dam frame 31 from which a bonding circuit 32 is exposed is formed on the surface of a substrate 30 inside the ring. The substrate 30 is formed so as to protrude from the substrate 30 so that the semiconductor element housing portion is formed in a concave shape.
The semiconductor element 41 is provided inside the ring of the dam frame 31 by using
Is stored, the bonding circuit 32 is connected to the semiconductor element 41 using the bonding wire 42, and then the sealing mold 40 is brought into contact with the dam frame 31.
By supplying a sealing material 43 which is liquid or heated and melted at room temperature between the dam frame 31 and the molding die 40 for sealing to fill the inside of the ring of the dam frame 31, and then heated. There is a method of curing and sealing.

[0006] With the recent increase in the functionality of electronic equipment, a contact connection type, which is formed so as to be detachable from a connector means of the electronic equipment and electrically connected to the connector means when mounted on the connector means. Semiconductor devices are being studied. As a semiconductor package used in this contact connection type semiconductor device, an annular dam frame 31 is formed on one surface of a substrate 30 as shown in FIG. Forming a circuit 32;
A semiconductor package in which a circuit (hereinafter, referred to as a contact circuit) 33 for contacting and connecting to a connector means is formed on the other surface of the substrate 30 is used. The semiconductor package generally includes a cylindrical through-hole plating film 35 formed through the substrate 30 in order to electrically connect circuits on the front and back of the substrate 30, such as the contact circuit 33 and the bonding circuit 32. I have.

The contact circuit 33 is generally formed on the surface with a gold plating layer different from the soft gold plating in order to increase the reliability of connection with the connector means, and the gold plating layer is generally formed of a hard gold plating. A gold plating layer having a low gold content and a high hardness is formed. Therefore, this semiconductor package
It is manufactured by forming a gold plating layer of soft gold plating and a gold plating layer of hard gold plating together.

An annular dam frame 31 protruding from one surface of the substrate 30 and a bonding circuit 32 formed inside the ring of the dam frame 31 and having a gold plating layer of soft gold plating on the surface. And a contact circuit 33 formed on the other surface of the substrate 30 and having a gold plating layer of hard gold plating on the surface, and a cylindrical shape formed through the substrate 30 and electrically connecting circuits on the front and back of the substrate 30. As a method of manufacturing a semiconductor package having the through-hole plating film 35, the following two methods have been studied and put into practical use.

As a first method, for example, FIG.
A conductor 29a and a contact circuit which are part of a bonding circuit and have a through hole 38 having a through-hole plating film 35 formed on the wall surface thereof and electrically connected through the through-hole plating film 35 as shown in FIG. The dam frame 31 is formed so as to protrude from one surface of the substrate 30 at a position surrounding the conductor 29a to be a part of the bonding circuit by using the substrate 30 having the conductor 29b to be a part of the substrate 30. As a method of forming this dam frame 31,
After the thermosetting resin is printed in a ring shape, it is formed by a method of curing, a method of bonding a ring-shaped material, or the like. Next, as shown in FIG. 5B, the entire surface of the substrate 30 on which the dam frame 31 is formed is masked with a first resist film 39a, and then the conductor 29b which is a part of the exposed contact circuit is exposed. A gold plating layer 37 of hard gold plating is formed on the surface of.

Then, after the first resist film 39a is peeled off, as shown in FIG. 5C, the surface of the gold plating layer 37 of the hard gold plating on the surface opposite to the surface on which the dam frame 31 of the substrate 30 is formed. The entire surface is covered with the second resist film 3
Mask with 9b. Next, after forming a gold plating layer of soft gold plating on the surface of the conductor 29a which will be a part of the exposed bonding circuit, the second resist film 39 is formed.
5B, the bonding circuit 32 having a gold plating layer 36 of soft gold plating on one surface of the substrate 30 as shown in FIG. 5D, and gold plating of hard gold plating on the other surface of the substrate 30 as shown in FIG. A semiconductor package including a contact circuit 33 having a layer 37 on the surface and electrically connecting the bonding circuit 32 and the contact circuit 33 with a through-hole plating film 35 penetrating the substrate 30 is manufactured.

As a second method, for example, FIG.
As shown in (a), the dam frame 31 is formed so as to protrude from one surface of the substrate 30 using the same substrate 30 as in the first method. Then, as shown in FIG. 6B, after the inside of the dam frame 31 on the surface of the substrate 30 is masked with the first resist film 39a, the conductor 29b that becomes a part of the exposed contact circuit is exposed. A gold plating layer 37 of hard gold plating is formed on the surface.

Next, after the first resist film 39a is peeled off, as shown in FIG. 6C, the entire surface of the surface of the substrate 30 excluding the inside of the dam frame 31 is covered with the second resist film 39b. , 39b. Then
Conductor 29a to be a part of the exposed bonding circuit
After a gold plating layer of soft gold plating is formed on the surface of FIG. 6, the second resist films 39b, 39b are peeled off, and FIG.
As shown in (d), one side of the substrate 30 is provided with a bonding circuit 32 having a soft gold-plated gold plating layer 36 on the surface, and the other surface is provided with a contact circuit 33 having a hard gold plating gold plating layer 37 on the surface. , Substrate 3
A semiconductor package for electrically connecting the bonding circuit 32 and the contact circuit 33 with the through-hole plating film 35 penetrating through 0 is manufactured.

However, in the semiconductor package obtained by the first method, the plating solution is applied to the resist films (39a and 39b) both when the hard gold plating layer 37 is formed and when the soft gold plating layer is formed.
As shown in FIG. 5D, the through-hole plating film 3
In some cases, a portion where the gold plating layers (37 and 36) were not formed or a portion where the gold plating layer was formed was thin was formed in the center portion of No. 5. When a thermal cycle test is performed using such a semiconductor package, electrical connection may be cut off at the central portion of the through hole plating film 35 having a small thickness, resulting in a problem that thermal cycle reliability is low. there were.

A semiconductor package used for a contact connection type semiconductor device is designed to improve connection reliability.
Generally, the size of the contact circuit 33 is as large as possible. Therefore, of the surface of the substrate 30 on which the dam frame 31 is formed, a through-hole land formed outside the ring of the dam frame 31 and connected to the through-hole plating film 35 or the surface of the substrate 30 on which the dam frame 31 is formed, The area of a conductor such as a circuit formed outside the ring of the dam frame 31 (hereinafter referred to as a ring outer circuit) is compared with the area of a conductor such as a contact circuit 33 formed on the other surface of the substrate 30. , Are generally quite small.

Therefore, as shown in FIG. 6D, the semiconductor package obtained by the second method has a ring outer circuit 3 formed outside the ring of the dam frame 31 and having a small conductor area.
4 and the like tend to have a thicker plating layer and a larger conductor area, and the contact circuit 33 tends to have a thinner plating layer. In particular, to increase productivity,
When a large current is applied to form the gold plating layer 37 of hard gold plating, or when the circulation amount of the plating solution is reduced,
When the supply of a plating solution having high activity becomes insufficient, the difference in thickness between the two tends to be particularly large. Also, in the case where a nickel plating layer is formed by performing electro-nickel plating as a pretreatment for gold plating in order to stabilize the depositability of gold plating, the difference in thickness between the two tends to increase.

For this reason, when the thickness of the plating layer (the gold plating layer 37 of hard gold plating or the nickel plating layer) of the contact circuit 33 is formed to a predetermined thickness, the portion of the ring outer circuit 34 and the like having a small conductor area becomes In some cases, the height was higher than the height of the dam frame 31. And the outer ring circuit 34
Is higher than the height of the dam frame 31, when the mold frame is used to seal at the dam frame 31, the mold die contacts the ring outer circuit 34, and the dam frame 31 and the mold die are closed. Between the dam frame 31
In some cases, the sealing material supplied to the inside of the ring may leak out from the gap, and the reliability of sealing is low.

As a result, a semiconductor package having excellent heat cycle reliability can be obtained, and a portion of the ring outer circuit formed outside the ring of the dam frame 31 is less likely to be higher than the height of the dam frame 31. There is a need for a manufacturing method.

[0018]

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to provide an annular dam frame projecting from one surface of a substrate. A bonding circuit formed on the inside of the dam frame ring on one surface of the substrate and having a first gold-plated layer on the surface to be bonded with a bonding wire, and a dam on the one surface of the substrate. A ring outer circuit formed on the outside of the ring of the frame, and a contact formed on the other surface of the substrate and having a second gold-plated layer on the surface that is to be brought into contact with the connector means of the electronic device and to be electrically connected to A method for manufacturing a semiconductor package comprising a circuit and a cylindrical through-hole plating film formed through a substrate and electrically connecting a bonding circuit and a contact circuit, wherein the method has excellent thermal cycle reliability. And together with the semiconductor package is obtained, part of a ring the outer circuit, is to provide a method for producing high become difficult semiconductor package than the height of the dam frame.

[0019]

According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor package, comprising: an annular dam frame projecting from one surface of a substrate; A bonding circuit formed on the inside of the ring of the dam frame and having a first gold-plated layer on the surface to be bonded to the bonding wire, and a ring formed on one surface of the substrate outside the ring of the dam frame; Outer circuit, formed on the other surface of the substrate, contacting the connector means of the electronic device,
A semiconductor comprising: a contact circuit having a second gold plating layer on the surface thereof to be electrically connected; and a cylindrical through-hole plating film formed through the substrate and electrically connecting the bonding circuit and the contact circuit. A method for manufacturing a package, comprising the following steps (a) and (b): [A] a step of filling a solid material into a hollow portion inside the through-hole plating film;
After masking the one surface of the substrate so that the conductor that becomes a part of the contact circuit is exposed, a second gold-plated layer is formed on the surface of the conductor that becomes a part of the contact circuit to form a contact circuit. Step, and after masking the other surface of the substrate so that the conductor that becomes a part of the bonding circuit is exposed, forming a first gold-plated layer on the surface of the conductor that becomes a part of the bonding circuit; The step of forming a circuit.

A semiconductor package manufacturing method according to a second aspect of the present invention is the method for manufacturing a semiconductor package according to the first aspect, wherein the solid is a cured thermosetting resin.

According to a third aspect of the present invention, in the method of manufacturing a semiconductor package according to the first or second aspect, after the other surface of the substrate is masked, a part of the bonding circuit is formed. A method of forming a first gold plating layer on the surface of a conductor to be formed is such that after masking the other surface of the substrate, a nickel plating film is formed on the surface of the conductor to be a part of a bonding circuit, and then the nickel plating film is formed. It is a method of forming a first gold plating layer on the surface of a plating film.

According to a fourth aspect of the present invention, there is provided a method of manufacturing a semiconductor package according to any one of the first to third aspects, wherein the first surface of the substrate is masked and then the contact is formed. A method of forming a second gold plating layer on the surface of a conductor that is a part of the circuit, after masking the one surface of the substrate, forming a nickel plating film on the surface of the conductor that is a part of the contact circuit, Then, a second gold plating layer is formed on the surface of the nickel plating film.

In the semiconductor package obtained by the present invention, since the solid material is filled in the cavity inside the through-hole plating film, if the substrate or the through-hole plating film expands and contracts during the heat cycle test, the entire through-hole plating film is removed. The through-hole plating film cuts in comparison with a conventional semiconductor package that has a through-hole plating film that expands and contracts almost uniformly and receives stress as a whole. A semiconductor package which is difficult to perform and has excellent thermal cycle reliability.

When a gold plating layer is formed on the surface of the outer ring circuit, the thickness of the gold plating layer is smaller than that of a part of the bonding circuit, which is smaller in area than a conductor part which is a part of the contact circuit. The thickness of the gold plating layer formed on the surface of the conductor that is a part of the outer ring circuit is smaller than that of the conductor that is a part of the contact circuit because it is affected by the area of the conductor that is a part of the contact circuit. It becomes difficult to become excessively thick, and it becomes difficult for the part of the ring outer circuit to become higher than the height of the dam frame.

[0025]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a semiconductor package according to the present invention will be described with reference to the drawings. FIG. 1 is a process diagram illustrating one embodiment of a method of manufacturing a semiconductor package according to the present invention, and FIG. 2 is a process diagram illustrating another embodiment of a method of manufacturing a semiconductor package according to the present invention. It is.

As shown in FIG. 1 (e), the semiconductor package obtained by the present invention has an annular dam frame 11 protruding from one surface of a substrate 10 and one of the surfaces of the substrate 10 A bonding circuit 12 formed inside the ring of the dam frame 11, a ring outer circuit 14 formed on the outside of the ring of the dam frame 11, of one surface of the substrate 10, and the other surface of the substrate 10. And a cylindrical through-hole plating film 15 formed through the substrate 10 and electrically connecting the bonding circuit 12 and the contact circuit 13.

A first gold plating layer 16 is formed on the surface of the bonding circuit 12, and a second gold plating layer 17 is formed on the surface of the contact circuit 13.

The first gold plating layer 16 is a layer for bonding with a bonding wire. The first gold plating layer 16 is generally formed of soft gold plating, which has a high gold content of about 99.99% and has a soft hardness. The second gold-plated layer 17 is a layer for making electrical contact with a connector means of an electronic device, and has a gold content of about 99.5% which is generally called hard gold plating. It is formed by gold plating with low hardness. Note that the first gold plating layer 16 is not limited to soft gold plating as long as it can be bonded to a bonding wire. The connection is not limited to the hard gold plating as long as the connection is possible, and another gold plating may be used. However, in the present invention, the first gold plating layer 1
6 and the second gold plating layer 17 are different.

As a method of manufacturing the semiconductor package, for example, the semiconductor package is manufactured by the steps shown in FIGS.

In the present invention, as shown in FIG. 1 (a), a through hole having a cylindrical through-hole plating film 15 formed on its wall surface and a conductor 21 which is a part of a bonding circuit is formed on one surface. And a substrate 10 having a conductor 22 which is a part of a contact circuit on the other surface.
In addition, the conductor 2 which is a part of the bonding circuit of the substrate 10
The conductor 23, which is a part of the ring outer circuit formed on the same surface as the surface on which the substrate 1 is formed, and the conductor 21, which is a part of the bonding circuit, and a part of the contact circuit via the through-hole plating film 15. The conductor 22 is electrically connected.

The substrate 10 used in the present invention includes a through-hole plating film 15, a conductor 21 which is a part of a bonding circuit, and a conductor 2 which is a part of a contact circuit.
Substrate 1 having conductor 2 and part of outer ring circuit
If it is 0, there is no particular limitation. For example, a sheet in which a metal foil is stretched on both sides of a sheet obtained by curing a thermosetting resin, an inorganic fiber such as glass, or an organic fiber such as polyester, polyamide, or cotton. A base material such as fiber cloth or paper is adhered with a thermosetting resin, and holes are drilled and metal plated using a plate or the like having metal foils on both sides to form a cylindrical through-hole plating film 15. After the formation, the conductors (21 to 23) are formed by etching a predetermined portion, and a plate not covered with a metal foil is perforated and plated with a metal to form conductors (21 to 23) and a cylindrical shape. And the like in which a through-hole plating film 15 is formed.

Examples of the thermosetting resin include thermosetting resins such as epoxy resin type, phenolic resin type, polyimide resin type, unsaturated polyester resin type, polyphenylene ether resin type, and inorganic fillers in these thermosetting resins. Materials mixed with materials and the like are included. In addition, a conductor (21-23)
Is preferred as a metal forming copper from the viewpoint of electrical reliability. Further, the substrate 10 may have a conductor inside as necessary.

Next, as shown in FIG. 1B, a dam frame 11 is formed so as to protrude from one surface of the substrate 10 at a position surrounding the conductor 21 which is a part of the bonding circuit, and through-hole plating is performed. The solid material 18 is filled in the cavity inside the film 15 (step [A]). Either the step of forming the dam frame 11 or the step of filling the solid 18 may be performed first, or may be performed simultaneously.

The dam frame 11 may be formed by printing an uncured thermosetting resin or an ultraviolet curable resin in a ring and then curing it, or by bonding a ring-shaped material. I do. The thermosetting resin used for forming the dam frame 11 may be the same as or different from the thermosetting resin used for the substrate 10. Examples of the annular material include a plate in which the base material is bonded with a thermosetting resin. In the case where the uncured thermosetting resin is printed in a ring shape and then cured, it is preferable that the productivity of forming the dam frame 11 is excellent and the adhesive strength between the substrate 10 and the dam frame 11 is excellent.

In the present invention, it is important to have a step of filling the solid material 18 into the hollow portion inside the through-hole plating film 15. If this step is not provided, the through-hole plating film 1
5 may be cut at the center, resulting in a semiconductor package having low thermal cycle reliability.

The solid material 18 used in the present invention can be filled in the cavity inside the through-hole plating film 15 and is solid in the subsequent semiconductor package manufacturing process and semiconductor package use process. If it is not particularly limited, for example, an uncured thermosetting resin that is liquefied or heated and melted at room temperature, or filled with an uncured ultraviolet curable resin, and then cured and solidified. And after melting and filling a metal such as solder, and then solidifying by cooling. When a thermosetting resin is used, the filling property is good, and the adhesive strength with the through-hole plating film 15 is excellent, which is preferable.

When the cavity inside the through-hole plating film 15 is filled, as shown in FIG. 2B, the surface of the conductor 23 which is a part of the outer ring circuit is also uncured thermosetting. After applying resin or uncured UV curable resin,
When a layer of the solid material 18 is formed on the surface of the conductor 23 which cures and becomes a part of the ring outer circuit, and then the dam frame 11 is formed on the surface of the layer of the solid material 18, a part of the ring outer circuit is formed. Since plating does not adhere to the surface of the conductor 23 to be formed in the subsequent steps, the portion of the outer ring circuit 14 is particularly difficult to be higher than the height of the dam frame 11 and is preferable. FIG. 2A shows a substrate 10 to be used, which is similar to the substrate 10 shown in FIG.

Next, as shown in FIG.
The entire surface on which the 0 dam frame 11 is formed is masked with the first resist film 19a (hereinafter, step [A]). At this time, the surface of the substrate 10 opposite to the surface on which the dam frame 11 is formed is not masked, and the conductor 22 serving as a part of the contact circuit is not masked.
Is exposed. The above first resist film 1
A sheet-like photosensitive resist generally called a dry film resist is used as 9a, but a liquid resist may be applied by a printing method or the like. In addition,
The first resist film 19a is formed on the dam frame 1 of the substrate 10.
It is not limited to the formation on the entire surface on which 1 is formed. If the surface of the conductor 21 which is to be a part of the bonding circuit is masked, it is not necessary to form the conductor 21 on the portion without the conductor.

When a layer of the solid material 18 is formed on the surface of the conductor 23 which is a part of the ring outer circuit as shown in FIG. Also,
It is not necessary to mask with the first resist film 19a.

Next, as shown in FIG. 1C, a second gold plating layer 17 is formed on the surface of the conductor 22 which is not masked by the first resist film 19a and which is exposed as a part of the contact circuit. To form a contact circuit 13
To manufacture. The conductor 2 which is a part of the contact circuit
When a second gold plating layer 17 is formed on the surface of the nickel plating film after the nickel plating film is formed on the surface of No. 2, the deposition property of the second gold plating layer 17 is stabilized, and thus the It is preferable because a semiconductor package having excellent connection reliability with the connector means can be obtained.

Next, after the first resist film 19a is peeled off, as shown in FIG. 1D, the entire surface of the substrate 10 opposite to the surface on which the dam frame 11 is formed is covered with the second resist film 19b. Mask it. At this time, the substrate 10
The surface on which the dam frame 11 is formed is not masked so that the conductor 21 and the like which are a part of the bonding circuit are exposed. Examples of the second resist film 19b include those similar to the first resist film 19a. Also,
The second resist film 19 b is also provided on the dam frame 1 of the substrate 10.
The present invention is not limited to the formation on the entire surface opposite to the surface on which 1 is formed. If the surface of the second gold plating layer 17 formed on the surface of the contact circuit 13 is masked,
It is not necessary to form it on a portion having no conductor or a portion of the conductor on the surface which is not to be connected to the connector means.

Next, a first gold-plated layer is formed on the surface of the conductor 21 which is a part of the bonding circuit and the conductor 23 which is a part of the ring outer circuit, which is exposed because it is not masked by the second resist film 19b. 16 are formed to manufacture the bonding circuit 12 and the outer ring circuit 14. In addition,
After a nickel plating film is formed on the surface of the conductor 21 which is a part of the bonding circuit, the first gold plating layer 16 is formed on the surface of the nickel plating film. Is stable, and a semiconductor package having excellent connection reliability with a bonding wire is obtained, which is preferable.

Next, when the second resist film 19b is peeled off, a bonding having a first gold plating layer 16 on one surface of the substrate 10 on which the dam frame 11 is formed as shown in FIG. Circuit 12 and ring outer circuit 14
And a second gold-plated layer 17 on the other surface of the substrate 10.
A through-hole plating film 15 penetrating through the substrate 10;
Through the bonding circuit 12 and the contact circuit 13
Are electrically connected to each other. The semiconductor package thus obtained has excellent thermal cycle reliability, and the portion of the outer ring circuit 14 formed outside the ring of the dam frame 11 is less likely to be higher than the height of the dam frame 11. .

When the layer of the solid material 18 is formed on the surface of the conductor 23 which is a part of the ring outer circuit as shown in FIG. , FIG. 2
As shown in (e), a bonding circuit 12 having a first gold-plated layer 16 on the surface is provided on one surface of the substrate 10 on which the dam frame 11 is formed, and a second gold plating is provided on the other surface of the substrate 10. A through-hole plating film 15 having a contact circuit 13 having a layer 17 on its surface and penetrating the substrate 10
Then, a semiconductor package in which the bonding circuit 12 and the contact circuit 13 are electrically connected via the ring outer circuit 14 is obtained. The semiconductor package obtained in this manner has excellent thermal cycle reliability, and the first gold-plated layer 16 is not formed on the surface of the conductor 23 that is a part of the outer ring circuit. The portion of the outer ring circuit 14 formed outside the ring is less likely to be higher than the height of the dam frame 11.

In the above embodiment, after the second gold plating layer 17 is formed on the surface of the conductor 22 that is to be a part of the contact circuit, the first gold plating layer is formed on the surface of the conductor 21 that is to be a part of the bonding circuit. Although the embodiment in which the layer 16 is formed has been described, the present invention is not limited to this, and the substrate 10 is formed so that the conductor 21 which is a part of the bonding circuit is exposed.
After masking the surface opposite to the surface on which the dam frame 11 was formed,
After the first gold-plated layer 16 is formed on the surface of the conductor 21 that will be a part of the bonding circuit, and the bonding circuit 12 is formed, the dam of the substrate 10 is exposed so that the conductor 22 that is a part of the contact circuit is exposed. After masking the surface on which the frame 11 is formed, a second gold-plated layer 17 is formed on the surface of the conductor 22 which is a part of the contact circuit, and the contact circuit 1
3 may be formed.

[0046]

The method of manufacturing a semiconductor package according to the present invention includes the above steps [A] and [A], so that a semiconductor package having excellent heat cycle reliability can be obtained, and the outside of the ring of the dam frame can be obtained. The portion of the ring outer circuit formed in the above becomes difficult to be higher than the height of the dam frame.

[Brief description of the drawings]

FIG. 1 illustrates a method of manufacturing a semiconductor package according to the present invention.
It is a process drawing explaining one embodiment.

FIG. 2 shows a method of manufacturing a semiconductor package according to the present invention;
It is a process drawing explaining other embodiments.

FIG. 3 is a diagram illustrating a conventional method of sealing a semiconductor package.

FIG. 4 is a cross-sectional view illustrating the structure of a conventional semiconductor package.

FIG. 5 is a process diagram illustrating a conventional method for manufacturing a semiconductor package.

FIG. 6 is a process diagram illustrating another conventional semiconductor package manufacturing method.

[Explanation of symbols]

 10, 30 Substrate 11, 31 Dam frame 12, 32 Bonding circuit 13, 33 Contact circuit 14, 34 Ring outer circuit 15, 35 Through hole plating film 16 First gold plating layer 17 Second gold plating layer 18 Solids 19a, 19b, 39a, 39b Resist film 21, 29a Conductor forming part of bonding circuit 22, 29b Conductor forming part of contact circuit 23 Conductor forming part of ring outer circuit 36 Gold plated layer of soft gold plating 37 Gold plated layer of hard gold plating 38 Hole 40 Mold 41 Semiconductor element 42 Bonding wire 43 Sealant

Claims (4)

[Claims] An annular dam frame (11) protruding from one surface of a substrate (10) and one of the surfaces of the substrate (10) inside the ring of the dam frame (11). Formed,
Bonding circuit (12) having on its surface a first gold-plated layer (16) to be bonded to a bonding wire
And the dam frame (1) on one side of the substrate (10).
A ring outer circuit (14) formed outside the ring of (1) and a second circuit formed on the other surface of the substrate (10) and brought into contact with the connector means of the electronic device to establish an electrical connection. Contact circuit (13) having gold plating layer (17) on the surface
And a cylindrical through-hole plating film (15) formed through the substrate (10) and electrically connecting the bonding circuit (12) and the contact circuit (13). And (a) and (b) below. [A] Through-hole plating film (1
5) a step of filling a solid substance (18) into the cavity inside the step (5), and [A] masking the one surface of the substrate (10) so that the conductor (22) which is a part of the contact circuit is exposed. After that, a step of forming a second gold-plated layer (17) on the surface of the conductor (22) to be a part of the contact circuit to form the contact circuit (13), and a conductor to be a part of the bonding circuit Substrate (10) so that (21) is exposed
After masking the other surface, a first gold plating layer (1) is formed on the surface of the conductor (21) which is to be a part of the bonding circuit.
6) forming a bonding circuit (12). 2. The method according to claim 1, wherein the solid (18) is a cured thermosetting resin. 3. A method of forming a first gold-plated layer (16) on the surface of a conductor (21) which is to be a part of a bonding circuit after masking the other surface of the substrate (10). After masking the other surface of (2), a nickel plating film is formed on the surface of the conductor (21) which will be a part of the bonding circuit, and then a first gold plating layer (16) is formed on the surface of the nickel plating film. The method for manufacturing a semiconductor package according to claim 1, wherein the method is a forming method. 4. A method of forming a second gold-plated layer (17) on the surface of a conductor (22) that becomes a part of a contact circuit after masking the one surface of the substrate (10). After masking the above one surface, a nickel plating film is formed on the surface of the conductor (22) which will be a part of the contact circuit, and then a second gold plating layer (17) is formed on the surface of the nickel plating film. The method for manufacturing a semiconductor package according to claim 1, wherein the method is a forming method.