JPH10294302A - Device and method for treating substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide the substrate treating device, which can greatly reduce the load of workers for the member for performing scrub cleaning for the substrate and can decrease the cost. SOLUTION: When a wafer is not held by a wafer holder, an upper surface cleaning part of respective cleaning parts 60 and 80 for performing the scrub cleaning of the upper and lower surfaces of the wafer is rotated. Under the state wherein cleaning liquid is exhausted from nozzles 7 and 8, the cleaning parts 60 and 80 are brought close to each other, and contact surfaces 66a and 86a of cleaning brushes 66 and 86 are brought into contact. As a result, the contact surfaces 66a and 86a are made to rub. Therefore, the foreign material such as slurry deposited to the cleaning brushes 66 and 86 is floated. The floated foreign material is exhausted to the outside of the cleaning brushes 66 and 86 by the rotation of each cleaning part 60. Thus the cleaning brushes 66 and 86 can be cleaned. Furthermore, since the cleaning liquid is continuously exhausted, the cleaning brushes 66 and 86 swell and become soft.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for performing processing on various substrates to be processed such as a semiconductor wafer, a glass substrate for a liquid crystal display device, and a glass substrate for a PDP (plasma display panel), and the like. The present invention relates to a substrate processing method.

[0002]

2. Description of the Related Art A semiconductor device manufacturing process includes a process of forming a fine pattern by repeatedly performing processes such as film formation and etching on the surface of a semiconductor wafer (hereinafter, simply referred to as “wafer”). For fine processing, the surface of the wafer itself and the surface of the thin film formed on the wafer surface must be kept clean. Therefore, the wafer is cleaned as necessary. For example, after a thin film formed on the surface of a wafer is polished with an abrasive (slurry), the slurry needs to be removed because the slurry remains on the wafer surface.

FIG. 11 is a plan view showing a configuration example of a wafer cleaning apparatus for cleaning the wafer as described above.
FIG. 12 is a side view of the configuration shown in FIG. 11 as viewed from the Z direction in FIG. This wafer cleaning apparatus is for scrub cleaning both surfaces of the wafer W, and holds the wafer W horizontally by contacting the end face of the wafer W, and rotates the wafer W 3.
There are provided two holding rollers 251, 252 and 253, and a double-side cleaning device 210 for cleaning both sides of the wafer W held by the holding rollers 251, 252 and 253.

[0004] Three holding rollers 251, 252 and 2
53 is a roller shaft 27 supported by the supporting portions 261, 262 and 263 so as to be rotatable around a vertical axis.
1, 272 and 273, respectively. Of these, the holding roller 251 is a driving roller to which the driving force generated by the motor M is transmitted via the driving belt V, and the remaining holding rollers 252 and 253 are the wafer W
It is a driven roller that rotates with the rotation of.

[0005] The double-sided cleaning device 210 includes a holding roller 25.
An upper surface cleaning member 214 and a lower surface cleaning member 217 for cleaning the upper surface and the lower surface of the wafer W held by 1, 252 and 253, respectively, are provided. The upper and lower cleaning members 214 and 217 include substantially circular base plates 212 and 215, respectively. Cleaning brushes 213 and 216 made of, for example, PVA (Poly-Vinyl Alcohol) are fixed to the lower and upper surfaces of the base plates 212 and 215, respectively. At the approximate center of the cleaning brushes 213 and 216, nozzles 220 and 221 from which the cleaning liquid is discharged, respectively.
Are arranged.

When cleaning is performed, the holding roller 25
A driving force is applied to the driving roller 251 in a state where the wafer W is held on the wafers 1, 252 and 253, and the wafer W is rotated. In a state where the cleaning brushes 213 and 216 are in contact with the upper surface and the lower surface of the wafer W in this state, the upper and lower cleaning members 214 and 217 are rotated at a high speed by a rotation drive mechanism (not shown). The cleaning liquid is discharged from and 221. Thus, the upper surface and the lower surface of the wafer W are scrub-cleaned.

[0007]

The cleaning brushes 213 and 216 are in a state in which the cleaning liquid is absorbed while the scrub cleaning process is performed and for a while thereafter. Eventually, the water contained in the cleaning brushes 213 and 216 evaporates,
The cleaning brushes 213 and 216 are dry. For example, when the apparatus is not operated overnight, the cleaning brushes 213 and 216 are completely dry when the apparatus is operated the next day. When the cleaning brushes 213 and 216 dry, the cleaning brushes 213 and 216 are hardened. Therefore, if such cleaning brushes 213 and 216 are used as they are in the scrub cleaning process, the surface of the wafer W may be damaged.

Therefore, conventionally, an operator manually supplies water to the cleaning brushes 213 and 216 to swell and soften the cleaning brushes 213 and 216 before the operation of the apparatus. However, such work is very complicated and lowers work efficiency.
The cleaning brush 21 can be used without the troublesome work as described above.
Techniques to bring 3 and 216 ready for use were desired.

Further, foreign matter such as slurry removed from the surface of the wafer W during the scrub cleaning process and particles in the atmosphere adhere to the cleaning brushes 213 and 216 which are wet with the cleaning liquid or the like.
And 216 are contaminated. The dirt on the cleaning brushes 213 and 216 can be removed if the number of cleanings is small.
Although the cleaning brushes 213 and 216 drop to some extent due to the operation of supplying water thereto, if the number of cleaning operations increases, the cleaning brushes 213 and 216 do not drop even by the above-described operation. Therefore, such cleaning brushes 213 and 2
When the wafer W is scrub-cleaned by the step 16, the wafer W
Is contaminated.

Conventionally, when dirt remains on the cleaning brushes 213 and 216, the operator has to replace the dirt with a new one each time. Therefore, the operator has to frequently perform troublesome replacement work. Also,
The parts cost was high. Therefore, an object of the present invention is to solve the above-mentioned technical problems, to significantly reduce the burden on an operator for a member for scrub-cleaning a substrate, and to reduce the cost. And a substrate processing method.

[0011]

Means for Solving the Problems and Effects of the Invention According to the first aspect of the present invention, there is provided a first scrub cleaning for scrubbing one surface of a substrate to be held by a substrate holding means. And a second means for scrubbing the other surface of the substrate to be held by the substrate holding means, the second means being disposed opposite the first scrub cleaning means with the substrate to be held by the substrate holding means interposed therebetween. Scrub cleaning means; moving means for moving at least one of the first scrub cleaning means and the second scrub cleaning means toward and away from the other; and the first scrub cleaning means and the second scrub cleaning means Rotating means for rotating at least one of the first and second cleaning means during the period when the substrate is not held by the substrate holding means. Controls the operation of the moving means so that the stage and the second scrub cleaning means are in contact with each other, a substrate processing apparatus which comprises a control means for control the operation of the rotation means.

According to a fourth aspect of the present invention, the first scrub cleaning means for scrubbing one surface of the substrate to be held by the substrate holding means and the substrate to be held by the substrate holding means are interposed. A contact step of bringing a second scrub cleaning means disposed to face the first scrub cleaning means and scrub cleaning the other surface of the substrate to be held by the substrate holding means into close proximity to each other; A rotation step of rotating at least one of the first scrub cleaning means and the second scrub cleaning means brought into contact with each other during a period in which the substrate is not held by the substrate holding means. Is the way.

According to the present invention, either one of the first scrub cleaning means and the second scrub cleaning means, which are arranged opposite to each other, can be rotated in contact with each other. As a result, the first scrub cleaning means and the second scrub cleaning means are rubbed against each other, and the foreign matter adhering to each scrub cleaning means floats up. Further, since one of the scrub cleaning means is rotating, the foreign matter which has been lifted by the centrifugal force due to the rotation is discharged to the outside of the scrub cleaning means. Thus, the first scrub cleaning means and the second scrub cleaning means can be cleaned. Therefore, if such a work is performed every time the processing of the substrate is completed, for example, the scrub cleaning means can always be kept in a clean state without the operator manually cleaning the scrub cleaning means. it can. Therefore, the replacement time of the scrub cleaning means can be greatly delayed, and the burden on the replacement operation can be greatly reduced. Also, parts costs can be reduced.

[0014] The invention according to claim 2 further includes a cleaning liquid supply means for supplying a cleaning liquid to the first scrub cleaning means or the second scrub cleaning means, and the control means includes a substrate holding means for supplying the substrate to the substrate holding means. 2. The substrate processing apparatus according to claim 1, wherein the operation of the cleaning liquid supply unit is further controlled during a period in which the cleaning liquid is not held.

The invention according to claim 5 further comprises a cleaning liquid supply step of supplying a cleaning liquid to the first scrub cleaning means or the second scrub cleaning means. is there. In the present invention, the cleaning liquid is further supplied to any one of the scrub cleaning means at the time of cleaning the scrub cleaning means as described above. In this case, since the scrub cleaning units are in contact with each other, the cleaning liquid is supplied to one of the scrub cleaning units and the cleaning liquid is transferred to the other scrub cleaning unit. Therefore, since the degree of cleaning in each scrub cleaning means can be further improved, each scrub cleaning means can be further cleaned. Of course, if the cleaning liquid is supplied to both the scrub cleaning means, each scrub cleaning means can be further cleaned.

Further, if such a supply of the cleaning liquid is performed, for example, immediately before the operation of the apparatus, the scrub cleaning means can be automatically wetted, so that the scrub cleaning means can be kept in a soft state at the time of processing. in this case,
If the cleaning liquid is supplied to both scrub cleaning means, both scrub cleaning means can be effectively wetted, so that both scrub cleaning means can be in a soft state. Therefore, the operator does not need to swell the scrub cleaning means.

According to a third aspect of the present invention, the first scrub cleaning means and the second scrub cleaning means have a cleaning brush having a sponge-like contact surface with a substrate to be held by the substrate holding means. The rotating means rotates at least one of the first scrub cleaning means and the second scrub cleaning means around a rotation axis substantially perpendicular to the surface of the substrate to be held by the substrate holding means. 3. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is configured to:

According to the present invention, both sides of the substrate are scrub-cleaned by rotating the clean sponge-like scrub cleaning means around a rotation axis substantially perpendicular to the surface of the substrate to be held by the substrate holding means. Therefore, the substrate can be favorably scrub-cleaned.
Therefore, a high-quality substrate can be provided.

[0019]

Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. FIG. 1 is a plan view showing a configuration of a wafer cleaning apparatus which is a substrate processing apparatus according to a first embodiment of the present invention. FIG. 2 is a sectional view taken along the line II-I of FIG.
I is a cross-sectional view, partly omitted and partly conceptually shown.

This apparatus uses a CMP (Chemical Mechanical Polishing) method for polishing a thin film formed on the surface of a wafer W.
g) For removing slurry and excess thin film remaining on the surface of the wafer W after the processing is performed, the processing chamber 5 having a substantially rectangular shape in plan view surrounded by the side walls 1, 2, 3, and 4. And the wafer W in the processing chamber 5
Holding device 6 that can hold and rotate the wafer horizontally, and the upper surface and the lower surface of the wafer W while supplying the cleaning liquid from the cleaning liquid supply nozzles 7 and 8 to the upper and lower surfaces of the wafer W held by the wafer holding device 6. And a double-side cleaning device 9 for scrub cleaning the lower surface.

The wafer holding device 6 has a direction A (hereinafter, referred to as “holding direction”) perpendicular to the side walls 2 and 4 of the processing chamber 5.
Has a pair of holding hands 10 and 30 which are arranged to face each other. The holding hands 10 and 30 are movable in the holding direction A, and include base portions 12 and 32 attached to the base attachment portions 11 and 31 and base portions 12 and 32, respectively.
And three holding rollers 13 and 33 for holding the wafer W, respectively. These holding rollers 13 and 33 are arranged on a circumference corresponding to the shape of the end surface of the wafer W. The wafer W is held in a state where the end surfaces thereof are in contact with the side surfaces of the holding rollers 13 and 33.

The base mounting portions 11 and 31 have side walls 2 and 4 respectively.
One ends of hand shafts 15 and 35 arranged to extend to the outside of the side walls 2 and 4 through holes 14 and 34 formed therein are connected. At the other end of the hand shafts 15, 35,
The cylinder 1 fixed on the outer mounting plates 16 and 36 of the cylinder 4
The rods 18, 38 of 7, 37 are attached via connecting plates 19, 39. The rods 18 and 38 can be protruded or retracted along the holding direction A. With this configuration, by driving the cylinders 17 and 37, the holding hands 10 and 30 can be advanced and retracted in opposite directions along the holding direction A, and the wafer W
Can be held between the holding rollers 13 and 33, and the holding can be released.

Reference numerals 20 and 40 denote bellows which can expand and contract with the movement of the holding hands 10 and 30.
The bellows 20 and 40 prevent the cleaning liquid and the atmosphere supplied to the wafer W from the cleaning liquid supply nozzles 7 and 8 of the double-sided cleaning device 9 from affecting the hand shafts 15 and 35, and the cleaning liquid and the atmosphere Leakage to the outside of the processing chamber 5 is prevented. Further, the bellows 20 and 40 are connected to the rods 18 and 38 of the cylinders 17 and 37 and the hand shafts 15 and 3.
Particles generated from the processing chamber 5 are prevented from entering the processing chamber 5.

The holding rollers 13 and 33 are rotatably provided on the base portions 12 and 32 so as to rotate while holding the wafer W. That is, the holding roller 13,
33 is fixed to the upper ends of the roller shafts 21 and 41 supported by the base portions 12 and 32 so as to be rotatable around a vertical axis. The driving force required to rotate the wafer W is given to the holding roller 33. That is, the driving force of the motor M mounted on the motor mounting plate 42 provided outside the side wall 2 is applied to the belt 4 by the central holding roller 33b of the three holding rollers 33.
3 is transmitted. Further, the driving force transmitted to the central holding roller 33b is applied to the other two holding rollers 33a, 33 via the belts 44, 45.
c.

With the above arrangement, when the central holding roller 33b is driven by the motor M, the holding roller 33b
Rotates, and the other two holding rollers 33a,
33c also rotates. As a result, the wafer W held by the holding rollers 13 and 33 rotates. At this time, the holding roller 13 rotates following the rotation of the wafer W. Thus, the wafer W is rotated along the rotation direction B while being held by the holding rollers 13 and 33.

The double-sided cleaning device 9 includes an upper surface cleaning unit 60 and a lower surface cleaning unit 80 disposed above and below the wafer W held by the wafer holding device 6. The upper surface cleaning unit 60 and the lower surface cleaning unit 80 are portions of the entire surface area of the wafer W from the center to the peripheral edge of the wafer W at positions not interfering with the holding hands 10 and 30, respectively. Cleaning brush 66 provided to cover,
68 are provided.

The upper surface cleaning unit 60 and the lower surface cleaning unit 80
It has base portions 62 and 82 having mounting surfaces 61 and 81 on the side facing the wafer W, and rotating shafts 63 and 83 mounted on the base portions 62 and 82, and is vertically driven by rotation driving portions 64 and 84. It is configured to be able to rotate along a predetermined rotation direction about a rotation axis O along the center. Further, the upper surface cleaning unit 60 and the lower surface cleaning unit 80 can be moved in the vertical direction by the elevation drive units 65 and 85, respectively. This allows the wafer W to be cleaned during wafer cleaning.
Can be sandwiched between the upper surface cleaning unit 60 and the lower surface cleaning unit 80, and the upper surface cleaning unit 60 and the lower surface cleaning unit 80 can be separated from the wafer W after the wafer cleaning.

Upper base 62 and lower base 82
Cleaning brushes 66, 86 are provided on the respective mounting surfaces 61, 81. Near the center of the cleaning brushes 66 and 86,
Cleaning liquid supply nozzles 7 and 8 for supplying a cleaning liquid to the wafer W are arranged respectively. Cleaning pipes 67 and 87 are connected to the cleaning liquid supply nozzles 7 and 8. The cleaning pipes 67 and 87 are inserted into the rotating shafts 63 and 83 so as not to rotate, and the other end is connected to the other ends through three-way valves 68 and 88, such as hydrofluoric acid, nitric acid, hydrochloric acid, phosphoric acid,
Chemical supply paths 69 and 89 through which a chemical such as acetic acid and ammonia are led from a chemical tank (not shown) and pure water supply paths 70 and 90 through which pure water is led from a pure water tank (not shown) are connected. With this configuration, by controlling the switching of the three-way valves 68 and 88, the cleaning pipes 67 and 87 are controlled.
The cleaning solution supply nozzles 7 and 8 can selectively discharge the chemical solution and pure water from the cleaning solution supply nozzles 7 and 8.

FIG. 3 is a plan view of the lower surface cleaning section, and FIG. 4 is a sectional view taken along line IV-IV of FIG. Hereinafter, the configuration of the lower surface cleaning unit 80 will be described in more detail with reference to FIGS. In addition, the upper surface cleaning unit 60 includes the lower surface cleaning unit 8.
Since the top and bottom of 0 are inverted, the description is omitted. The cleaning brush 86 is attached to almost the entire upper surface of the lower base 82. A rotating shaft 83 is attached to a lower portion of the lower base 82 by bolts 101. The rotation shaft 83 is supported by a bearing attached to a fixed member (not shown), and is rotatable around a rotation axis O passing through the center of the wafer W by a rotation driving unit 84 (see FIG. 2). Insertion hole 1 in rotation shaft 83
02 is formed, and inside the insertion hole 102,
A support tube 103 into which the cleaning pipe 87 is inserted is provided. With this configuration, when the rotation shaft 83 is rotated,
Accordingly, the lower base 82 and the cleaning brush 86 rotate around the rotation axis O. On the other hand, the cleaning pipe 87
Is stationary.

The cleaning brush 86 is made of PVA (Poly-Vinyl Al
and a contact surface 86a with the lower surface of the wafer W is substantially flat. The cleaning brush 86 is formed with a plurality of substantially circular recesses 110 in a plan view, and the cleaning brush 86 is attached to the lower base 82 by bolts 111 inserted into the recesses 110. Further, the cleaning brush 86
, A liquid discharge hole 1 having a substantially circular shape in plan view.
The upper end of the cleaning pipe 87 faces the liquid discharge hole 115. This washing pipe 87
Is a cleaning liquid supply nozzle 8.

FIG. 5 is a block diagram showing an electrical configuration of the wafer cleaning apparatus. The wafer cleaning apparatus includes a control unit 130 including a microcomputer functioning as a control center. The control unit 130 controls the cylinders 17, 3 according to a preset control program.
7, motor M, rotation drive units 64 and 84, lifting drive unit 6
5, 85 and the three-way valves 68 and 88 are controlled to execute a scrub cleaning process and a brush cleaning process. The brush cleaning process is a process for cleaning the cleaning brushes 66 and 86 that are contaminated with foreign substances such as slurry after the scrub cleaning process.

Next, the scrub cleaning process will be described. Before the cleaning, the holding hands 10 and 30 stand by at a standby position retracted from the holding position for holding the wafer W,
In addition, the upper surface cleaning unit 60 and the lower surface cleaning unit 80 stand by at a standby position retracted from the cleaning position for cleaning the wafer W. When the wafer W is transferred by the transfer arm (not shown) after the previous process is completed, the control unit 130
The rods 18, 38 of 7, 37 are retracted. As a result, the holding hands 10, 30 approach each other. As a result, the wafer W is held at its end face by the holding rollers 13, 33.
Is held. After that, the rotation driving units 64 and 84 are driven to rotate the upper surface cleaning unit 60 and the lower surface cleaning unit 80. At the same time, the three-way valves 68 and 88 are controlled to connect the chemical supply paths 69 and 89 and the cleaning pipes 67 and 87. As a result, the chemical liquid is supplied from the cleaning liquid supply nozzles 7 and 8 to the upper and lower surfaces of the wafer W, respectively.

Thereafter, the controller 130 drives the motor M to rotate the holding roller 33. Accompanying this, the wafer W rotates at a low speed. Further, the driven roller 13 also rotates according to the rotation of the wafer W. Further, the lifting drive unit 6
5 and 85, the upper surface cleaning unit 60 and the lower surface cleaning unit 8
0 are moved toward each other. As a result, the wafer W held by the holding rollers 13 and 33 is sandwiched by the cleaning brushes 66 and 86, and the cleaning brushes 66 and 8 are held.
The upper and lower surfaces of the wafer W are rubbed by the contact surface 6.

In this manner, the scrubbing of the upper and lower surfaces of the wafer W is performed by the cleaning brushes 66 and 86 while the chemical solution is supplied. When the scrub cleaning with the chemical is completed, the control unit 130 drives the lifting / lowering driving units 65 and 85 to move the upper surface cleaning unit 60 and the lower surface cleaning unit 80 away from the wafer W, and the cleaning brush 66 from the wafer W. , 86 are released. Thereafter, the three-way valves 68 and 88 are controlled, and the cleaning pipes 67 and 87 and the pure water supply paths 70 and 90 are controlled.
And is connected. As a result, pure water is supplied from the cleaning liquid supply nozzles 7 and 8, and the chemical liquid and the like remaining on the upper and lower surfaces of the wafer W are washed away.

FIG. 6 is a schematic diagram for explaining the flow of the brush cleaning process. The control unit 130 executes the brush cleaning process according to the control program, for example, after the scrub cleaning process in one lot is completed and when the operation start of the apparatus is instructed. The control unit 130
First, it is confirmed that the wafer W is not held by the wafer holding device 6. This confirmation can be made based on, for example, whether the rods 18, 38 of the cylinders 17, 37 are in a protruding state or a retracted state.

When the control unit 130 confirms that the wafer W is not held by the wafer holding unit 6, the control unit 130
4 is driven to rotate the upper surface cleaning unit 60 in the rotation direction C, and the lower surface cleaning unit 80 is kept stopped. In addition, the three-way valves 68 and 88 are controlled so that the
9, 89 and the cleaning pipes 67, 87 are connected. Further, the elevation drive units 65 and 85 are driven, and the upper surface cleaning unit 60 is driven.
And the lower surface cleaning unit 80 are brought close to each other. As a result, the upper surface cleaning unit 60 and the lower surface cleaning unit 80
And then approach in a rotating state (Fig. 6 (a)
).

In this process, the chemical discharged from the nozzles 7 and 8 is applied to the vicinity of the center of the opposed cleaning brushes 86 and 66. As a result, the chemicals are absorbed by the cleaning brushes 86, 66, and the cleaning brushes 86, 66 swell. Therefore, even when the cleaning brushes 66 and 88 are dry, such as when the brush cleaning process is started in response to the apparatus operation instruction, the cleaning brushes 66 and 86 are softened to some extent.

The control unit 130 stops the elevation drive units 65 and 85 at the timing when the contact surfaces 66a and 86a of the cleaning brushes 66 and 86 come into contact with each other. As a result, the contact surface 66
a and 86a come into contact with each other. On the other hand, at this time, the upper surface cleaning unit 60
Is kept rotated, the contact surfaces 66a and 86a are rubbed against each other. As a result, the foreign matter adhering to the cleaning brushes 66, 86 comes up. In addition, at this time, the chemical liquid is discharged from the nozzles 7 and 8, so that the stuck foreign matter also comes up. The floating foreign matter is discharged to the outside of the cleaning brushes 66 and 86 by the centrifugal force generated by the rotation of the upper surface cleaning unit 60 (FIG. 6).
(b)).

During this time, the chemicals discharged from the nozzles 7 and 8 are absorbed by the cleaning brushes 66 and 86. As a result, the cleaning brushes 66 and 86 are sufficiently swollen, and become sufficiently soft so as not to damage the wafer W. This makes it possible to execute the scrub cleaning process even immediately after the end of the brush cleaning process.

Thereafter, the control unit 130 controls the rotation drive unit 64
While maintaining the driving state of the three-way valves 68 and 88, the elevation drive units 65 and 85 are driven to separate the upper surface cleaning unit 60 and the lower surface cleaning unit 80 (FIG. 6C). Then, after the elapse of a predetermined time, the drive of the rotary drive unit 64 is stopped, and the three-way valves 68 and 88 are closed to end the brush cleaning process.

After the brush cleaning process using the chemical solution is completed, the three-way valves 68 and 88 are controlled to connect the pure water supply paths 70 and 90 to the cleaning pipes 67 and 87, and the nozzles 7 and 8 are connected. And the same brush cleaning process as described above may be performed while discharging pure water from. According to this configuration, even when foreign matter that has floated in the brush cleaning process using the chemical solution remains on the cleaning brushes 66 and 86, the foreign matter can be discharged to the outside of the cleaning brushes 66 and 86. The cleanliness of the cleaning brushes 66 and 86 can be further improved.

As described above, according to the first embodiment,
Since the contact surfaces 66a, 86a of the cleaning brushes 66, 86 are rubbed, the cleaning brushes 66, 86 can be cleaned well. In addition, since the cleaning process is performed while discharging the cleaning liquid, the cleaning brushes 66 and 86 can be cleaned more favorably. Therefore, the cleaning brushes 66, 8
6 can be kept clean, so that the cleaning brushes 66, 8
6 can be extended. Therefore, the replacement time of the cleaning brushes 66, 86 can be greatly delayed, and the number of replacements of the cleaning brushes 66, 68 is reduced. Therefore,
The labor of the operator can be saved. Also, parts costs are reduced.

In addition, since the cleaning brushes 66 and 86 can be swollen and sufficiently softened, if this processing is always performed together with the apparatus operation start instruction,
The operation of swelling the brush becomes unnecessary. Therefore, the labor of the operator can be saved. FIG. 7 is a sectional view of the lower surface cleaning unit 80 provided in the wafer cleaning apparatus according to the second embodiment of the present invention. 7, the same reference numerals are used for the same functional parts as in FIG.

In the first embodiment, the cleaning brush is swollen mainly by the cleaning liquid discharged from the nozzle of the opposing cleaning section, whereas in the second embodiment, the cleaning brush attached to the cleaning section is mounted. The cleaning brushes 66 and 8 are impregnated with the cleaning liquid discharged from the nozzles.
6 are swollen. More specifically, the cleaning brush 8
6, a liquid discharge hole 160 smaller than the diameter of the nozzle 8 is formed. When the scrub cleaning process is performed, a part of the cleaning liquid discharged from the nozzle 8 is supplied to the lower surface of the wafer W through the liquid discharge holes 160.

Near the upper end of the lower base portion 82, a liquid storage portion 165 continuous with the liquid discharge hole 160 is formed.
The upper surface of the liquid reservoir 165 is open, and the cleaning brush 86
The upper surface of the liquid storage portion 165 is closed by the lower surface 86b of the liquid storage portion 165. With this configuration, of the cleaning liquid discharged from the nozzle 8, the cleaning liquid other than the cleaning liquid guided to the liquid discharge hole 160 is guided to the liquid storage unit 165 and stored in the liquid storage unit 165. As a result, the cleaning brush 86
The lower surface 86 b of the cleaning brush 86 comes into contact with the cleaning liquid stored in the liquid storage section 165, and the cleaning liquid permeates the cleaning brush 86 from the lower surface 86 b of the cleaning brush 86. Thereby, the cleaning brush 86 swells.

The upper cleaning section 60 has a structure in which the top and bottom of the lower cleaning section 80 are inverted, and the cleaning brush 66 is also swollen by the permeation of the cleaning liquid from the lower surface. As described above, according to the second embodiment,
Since the cleaning brushes 66 and 86 can be swollen in a state of being in contact with the cleaning liquid, the cleaning brushes 66 and 86 can be swollen more efficiently than in the first embodiment.

Although two embodiments of the present invention have been described, the present invention is not limited to the above embodiments. For example, in the above-described embodiment, during the brush cleaning process, the upper surface cleaning unit 60 and the lower surface cleaning unit 80 in a state where the cleaning liquid is discharged and rotated are moved toward and away from each other.
However, the discharge timing of the cleaning liquid, the rotation of the upper surface cleaning unit 60 and the lower surface cleaning unit 80, and the start timing of the approach / separation of the upper surface cleaning unit 60 and the lower surface cleaning unit 80 can be arbitrarily set.

For example, in a state where the upper surface cleaning unit 60 and the lower surface cleaning unit 80 are waiting at the standby position, the cleaning liquid is discharged from the nozzles 7 and 8, and the cleaning brushes 66 and 86 are sufficiently swollen. , 86 contact surface 6
The upper surface cleaning unit 60 and the lower surface cleaning unit 80 may be brought close to each other so that the upper surfaces 6a and 86a come into contact with each other, and after the contact surfaces 66a and 86a come into contact, the upper surface cleaning unit 60 may be rotated. According to this configuration, the contact surfaces 66a, 86a are rubbed in a state where the cleaning brushes 66, 86 are sufficiently swollen and softened, so that damage to the contact surfaces 66a, 86a can be reliably prevented.

In the above embodiment, the upper surface cleaning unit 60
The contact surfaces 66a, 86a of the cleaning brushes 66, 86 are rubbed by rotating only the cleaning brush 66, 86.
However, for example, the upper surface cleaning unit 60 and the lower surface cleaning unit 8
0 may be rotated in the opposite direction, or the upper surface cleaning unit 60 and the lower surface cleaning unit 80 may be rotated in the same direction at different rotation speeds. Even with this configuration, the contact surfaces 66a and 86a of the cleaning brushes 66 and 86 are rubbed against each other, so that foreign matters can be lifted. Furthermore, since both the upper surface cleaning unit 60 and the lower surface cleaning unit 80 rotate on their own, foreign substances contained in both the cleaning brushes 66 and 86 are removed from the upper surface cleaning unit 60 and the lower surface cleaning unit 80.
Can be discharged to the outside by centrifugal force caused by the rotation of. As a result, the cleaning brushes 66 and 86 can be more reliably cleaned.

Further, in the above embodiment, when the upper surface cleaning unit 60 and the lower surface cleaning unit 80 are moved toward and away from each other during the brush cleaning process, both the upper surface cleaning unit 60 and the lower surface cleaning unit 80 are moved. For example, one of them may be stopped and only the other may be moved. Furthermore, in the above-described embodiment, the same nozzle is shared between the brush cleaning process and the scrub cleaning process. However, for example, a nozzle dedicated to the brush cleaning process may be provided. For example, a nozzle for discharging the cleaning liquid in a shower shape from the side of the cleaning brushes 66 and 86 may be provided. According to this configuration, the cleaning brush 66,
Since the cleaning liquid can be sprayed on the entire surface 86, the cleaning brushes 66 and 86 can be more efficiently swollen.

Further, in the above embodiment, the contact surface 66
Although the cleaning brushes 66 and 86 whose a and 86a are substantially flat have been described as an example, any configuration can be applied to the cleaning brushes 66 and 86. FIG.
FIG. 9 is a plan view illustrating a configuration of a lower surface cleaning unit 80 including a cleaning brush 86 having a configuration different from that of the above-described embodiment.
It is IX-IX sectional drawing of. FIG. 10 is a sectional view taken along the line XX of FIG. 8, showing only the cleaning brush 86. 8 and 9, the same reference numerals are used for the same functional parts as in FIGS. 3 and 4.

The cleaning brush 86 is disposed substantially 90 degrees along the circumferential direction of the lower base 82 near the periphery of the lower base 82.
It has four unit brush parts 170 which are arranged at a distance from each other. These unit brush parts 170 are connected to each other by a cross-shaped brush base part 171 at the lower part. The cleaning brush 86 is attached to the lower base 82 by an attachment plate 175. Mounting plate 175
The notch 176 corresponding to the unit brush part 170 is formed in the peripheral part, and the brush base part 17
A step 177 corresponding to the shape of No. 1 is formed. The mounting plate 175 is mounted from above the cleaning brush 86 such that the unit brush portion 170 is exposed from the notch portion 176 and the brush base portion 171 fits into the step portion 177. Overlaid,
Further, this is achieved by fixing the mounting plate 175 to the lower surface base portion 82 with bolts 178.

The unit brush 170 of the cleaning brush 86
As shown in FIG. 10, the cross section has a concave center. That is, two protrusions 180 and 181 extending along the radial direction of the lower surface base portion 82, and the two protrusions 18
0,181 and a valley 182. In this case, the contact surface with the lower surface of wafer W is
1 is near the upper end.

Even with such a configuration, the cleaning brush 6
If the contact surfaces of the cleaning brushes 66 and 86 are rubbed against each other, cleaning of the cleaning brushes 66 and 86 can be achieved. It should be noted that the configuration of the above-described second embodiment in which the cleaning brush swells by applying the lower portion of the cleaning brush to the cleaning liquid stored in the liquid storage unit 165 is applied to the cleaning brush having such a configuration. Of course it is good.

Further, in the first, second and third embodiments, a disk-type double-side cleaning device 9 having a brush rotating around a vertical axis will be described as an example of a device for cleaning a wafer W. However, for example, a roll-type double-side cleaning device in which a brush rotates around a horizontal axis substantially perpendicular to a vertical axis may be used. Furthermore, in the above embodiment, the wafer W is described as an example of the substrate, but the present invention is not limited to this, and various substrates such as a glass substrate for a liquid crystal display device and a glass substrate for a PDP can be applied. .

In addition, various design changes can be made within the scope described in the claims.

[Brief description of the drawings]

FIG. 1 is a plan view illustrating a configuration of a wafer cleaning apparatus that is a substrate processing apparatus according to a first embodiment of the present invention.

FIG. 2 is a sectional view taken along line II-II of FIG.

FIG. 3 is a plan view illustrating a configuration of a lower surface cleaning unit.

FIG. 4 is a sectional view taken along line IV-IV of FIG. 3;

FIG. 5 is a block diagram illustrating an electrical configuration of the wafer cleaning apparatus.

FIG. 6 is a conceptual diagram illustrating a brush cleaning process.

FIG. 7 is a cross-sectional view illustrating a configuration of a lower surface cleaning unit 80 in a wafer cleaning apparatus that is a substrate processing apparatus according to a second embodiment of the present invention.

FIG. 8 is a plan view illustrating a configuration of a lower surface cleaning unit 80 in a wafer cleaning apparatus that is a substrate processing apparatus according to a third embodiment of the present invention.

FIG. 9 is a sectional view taken along line IX-IX of FIG. 8;

FIG. 10 is a sectional view taken along line XX of the cleaning brush 86 of FIG. 8;

FIG. 11 is a plan view showing a configuration of a conventional wafer cleaning apparatus for cleaning a wafer.

FIG. 12 is a side view of the configuration shown in FIG. 11 as viewed from the Z direction in FIG. 11;

[Explanation of symbols]

 Reference Signs List 6 wafer holding device (substrate holding device) 7, 8 nozzle (cleaning liquid supply device) 9 double-sided cleaning device 60 top surface cleaning unit (first scrub cleaning unit) 80 bottom surface cleaning unit (second scrub cleaning unit) 64, 84 rotation drive unit (Rotating means) 65,85 Lifting drive (moving means) 66,86 Cleaning brush 66a, 86a Contact surface 67,87 Cleaning pipe (cleaning liquid supply means) 68,88 Three-way valve (cleaning liquid supply means) 69,89 Chemical liquid supply Path (cleaning liquid supply means) 70, 90 Pure water supply path (cleaning liquid supply means) 130 Control unit (control means) W Wafer (substrate) O Rotation axis (rotation axis)

Claims (5)

[Claims] A first scrub cleaning means for scrubbing one surface of the substrate to be held by the substrate holding means; and a first scrub cleaning means for sandwiching the substrate to be held by the substrate holding means. A second scrub cleaning means for scrub cleaning the other surface of the substrate to be held by the substrate holding means, and at least one of the first scrub cleaning means and the second scrub cleaning means Moving means for moving the substrate closer to or away from the other, rotating means for rotating at least one of the first scrub cleaning means and second scrub cleaning means, and a substrate held by the substrate holding means During the period in which the cleaning is not performed, the operation of the moving unit is controlled so that the first scrub cleaning unit and the second scrub cleaning unit come into contact with each other. And a control means for controlling the operation of the rotating means. 2. The apparatus according to claim 1, further comprising a cleaning liquid supply unit for supplying a cleaning liquid to the first scrub cleaning unit or the second scrub cleaning unit, wherein the control unit controls a period during which the substrate is not held by the substrate holding unit. 2. The substrate processing apparatus according to claim 1, further comprising controlling the operation of the cleaning liquid supply unit. 3. The first scrub cleaning means and the second scrub cleaning means include a cleaning brush having a sponge-like contact surface with a substrate to be held by the substrate holding means. And at least one of the first scrub cleaning means and the second scrub cleaning means rotating around a rotation axis substantially perpendicular to the surface of the substrate to be held by the substrate holding means. 3. The substrate processing apparatus according to claim 1, wherein: 4. A first scrub cleaning means for scrub cleaning one surface of a substrate to be held by the substrate holding means;
Second scrub cleaning means disposed opposite to the first scrub cleaning means with the substrate to be held by the substrate holding means interposed therebetween, for scrub cleaning the other surface of the substrate to be held by the substrate holding means And a contact step of bringing the first scrub cleaning means and the second scrubbing means brought into contact with each other while the substrate is not held by the substrate holding means.
A rotating step of rotating at least one of the scrub cleaning means. 5. The substrate processing method according to claim 4, further comprising a cleaning liquid supply step of supplying a cleaning liquid to said first scrub cleaning means or said second scrub cleaning means.