JPH10242623A - Ceramic circuit board - Google Patents

Ceramic circuit board

Info

Publication number
JPH10242623A
JPH10242623A JP9043675A JP4367597A JPH10242623A JP H10242623 A JPH10242623 A JP H10242623A JP 9043675 A JP9043675 A JP 9043675A JP 4367597 A JP4367597 A JP 4367597A JP H10242623 A JPH10242623 A JP H10242623A
Authority
JP
Japan
Prior art keywords
glass
insulating film
circuit board
weight
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9043675A
Other languages
Japanese (ja)
Other versions
JP3548366B2 (en
Inventor
Sentarou Yamamoto
泉太郎 山元
Akira Imoto
晃 井本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP04367597A priority Critical patent/JP3548366B2/en
Publication of JPH10242623A publication Critical patent/JPH10242623A/en
Application granted granted Critical
Publication of JP3548366B2 publication Critical patent/JP3548366B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a ceramic circuit board for suppressing a warp deformation of the board by improving sintering properties of an insulating film covering a conductor formed on a board surface, and improving electric insulation of the film. SOLUTION: In the ceramic circuit board 10 obtained by covering a conductor 2 formed on a board surface with an insulating film 5, the film 5 is obtained by adding 35 to 60wt.% of glass component containing at least SiO2 , PbO, CaO and Na2 O, 40 to 60wt.% of Al2 O3 as ceramic filler and 0.001 to 0.02 pts.wt. of ZrO2 to 100 pts.wt. of the glass component and baking it. In this case, alumina and labradorite are existed as crystal phase.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明はセラミック回路基板
に関するものであり、特に、基板表面に形成された導体
を絶縁膜により被覆したセラミック回路基板に関するも
のである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic circuit board, and more particularly to a ceramic circuit board in which a conductor formed on the surface of a substrate is covered with an insulating film.

【0002】[0002]

【従来技術】従来においては、回路基板用の配線導体に
Ag、Cu、Au、W、Mo等の導体を使用した場合、
基板の電気的絶縁性を保持するためや、基板の表面に形
成された導体の保護、半田によるショート防止やマイグ
レーションの防止等のため、導体を絶縁膜により被覆し
ていた。
2. Description of the Related Art Conventionally, when a conductor such as Ag, Cu, Au, W, or Mo is used as a wiring conductor for a circuit board,
In order to maintain the electrical insulation of the substrate, to protect the conductor formed on the surface of the substrate, to prevent short-circuiting due to solder, to prevent migration, etc., the conductor is covered with an insulating film.

【0003】例えば、セラミック回路基板には、大別す
るとアルミナ等で形成されたセラミック基板上に上記導
体をペースト化し、印刷、焼成して形成した回路パター
ン上に、アルミナ、ガラス等の絶縁性物質をペースト化
し、印刷、焼成し絶縁膜を形成した厚膜回路基板と、内
部配線になる導体膜をテープ化されたアルミナ等のセラ
ミックで挟持、積層し、表層導体を絶縁膜で被覆した多
層回路基板とがある。
For example, a ceramic circuit board is roughly divided into a ceramic substrate formed of alumina or the like, and the conductor is pasted, printed and fired, and an insulating material such as alumina or glass is formed on a circuit pattern formed by the paste. Is a multi-layer circuit in which a thick film circuit board on which an insulating film is formed by printing, baking, and firing, and a conductor film to be used as internal wiring are sandwiched and laminated with ceramic such as taped alumina, and the surface conductor is covered with an insulating film There is a substrate.

【0004】近年においては、低コスト化、高信頼性、
高機能化の観点から、基板材料に低温で焼成可能なガラ
スセラミック材料、導体材料に大気中で焼成可能で、低
い導体抵抗値を有するAg等の導体を内層、表層導体に
用い、一体的に焼成してなる低温焼成多層基板が主流と
なっている。
In recent years, cost reduction, high reliability,
From the viewpoint of high performance, a glass ceramic material that can be fired at a low temperature for the substrate material, and a conductor such as Ag that can be fired in the air for the conductor material and that has a low conductor resistance value are used for the inner layer and the surface layer conductor. Low-temperature fired multilayer substrates obtained by firing are mainly used.

【0005】これらセラミック多層回路基板に用いられ
る絶縁膜には、低温で焼結する絶縁膜であること、
電気的絶縁性が確保できる絶縁膜であること、焼成後
の基板の反り変形の原因にならない絶縁膜であること等
が挙げられる。
[0005] The insulating film used for these ceramic multilayer circuit boards is an insulating film sintered at a low temperature,
An insulating film that can ensure electrical insulation, an insulating film that does not cause warpage of the substrate after firing, and the like can be given.

【0006】これらの特性は、絶縁膜の焼結性に起因
し、焼結性が不良となれば、絶縁不良及び基板の反り変
形を発生させるため、絶縁膜の焼結性は重要な要因であ
る。
These characteristics are caused by the sintering property of the insulating film. If the sintering property becomes poor, poor insulation and warpage of the substrate occur. Therefore, the sintering property of the insulating film is an important factor. is there.

【0007】従来の低温焼成多層基板に用いられるガラ
スセラミック材料として、重量百分率で、SiO2
0〜65%、CaO 5〜15%、PbO 10〜25
%、MgO 0.5〜10%、Na2 O 1〜10%、
2 O 1〜10%、Al23 0〜20%、B2
3 0〜10%、ZnO 0〜5%の組成を有するガラ
ス粉末35〜60%と、アルミナ粉末40〜65%から
なるものが知られている(特公平4−49497号公報
参照)。
As a glass ceramic material used for a conventional low-temperature fired multilayer substrate, SiO 2 4 is used as a weight percentage.
0-65%, CaO 5-15%, PbO 10-25
%, MgO 0.5-10%, Na 2 O 1-10%,
K 2 O 1 to 10%, Al 2 O 3 0 to 20%, B 2 O
A composition comprising 35 to 60% of glass powder having a composition of 30 to 10% and ZnO of 0 to 5% and 40 to 65% of alumina powder is known (see Japanese Patent Publication No. 4-49497).

【0008】そして、従来のセラミック回路基板は、ガ
ラスセラミック材料を用いて基板用成形体を作製し、こ
の成形体の表面に、表層導体となる導体ペーストを塗布
し、この導体ペーストを、例えば上記したガラスセラミ
ック材料からなるペーストにより被覆し、この後、基板
用の成形体、表層導体となる導体ペースト、絶縁膜とな
るガラスセラミックペーストを一体焼成することにより
作製されていた。
In the conventional ceramic circuit board, a molded body for a substrate is manufactured using a glass ceramic material, and a conductor paste serving as a surface conductor is applied to the surface of the molded body. It is produced by coating with a paste made of a glass ceramic material described above, and thereafter integrally firing a molded body for a substrate, a conductor paste as a surface conductor, and a glass ceramic paste as an insulating film.

【0009】[0009]

【発明が解決しようとする課題】しかしながら、上記ガ
ラスセラミック材料を用いて絶縁膜を形成した場合、基
板用の成形体、表層導体となる導体ペースト、絶縁膜と
なるガラスセラミックペーストを一体的に焼成すると、
絶縁膜に焼成時の焼結バラツキが発生し、焼結不足によ
る絶縁膜の電気的絶縁性の劣化、および基板の反り変形
が大きくなるという問題があった。
However, when an insulating film is formed using the above-mentioned glass ceramic material, a molded body for a substrate, a conductor paste serving as a surface conductor, and a glass ceramic paste serving as an insulating film are integrally fired. Then
Variations in sintering during firing occur in the insulating film, and there is a problem in that electrical insulation of the insulating film deteriorates due to insufficient sintering, and warpage of the substrate increases.

【0010】本発明のセラミック回路基板は、基板表面
に形成された導体を被覆する絶縁膜の焼結性を向上し、
絶縁膜の電気的絶縁性を向上し、基板の反り変形を抑制
することを目的とする。
The ceramic circuit board according to the present invention improves the sinterability of an insulating film covering a conductor formed on the surface of the board,
An object of the present invention is to improve electrical insulation of an insulating film and suppress warpage of a substrate.

【0011】[0011]

【課題を解決するための手段】本発明者等は、絶縁膜の
焼結不良に起因する電気的絶縁性の劣化、および基板の
反り変形について鋭意検討した結果、絶縁膜の組成を、
SiO2 、PbO、CaO、Na2 Oを含有するガラス
に対して、微量のZrO2 を含有せしめることにより、
ZrO2 が核となり、ガラスの結晶化を一定レベルまで
促進するとともに、ガラスの溶融性を確保でき、これに
より、絶縁膜の密度バラツキ、特に密度低下を解決し、
絶縁性を向上し、基板の反り変形を抑制できることを見
いだし、本発明に至った。
Means for Solving the Problems The inventors of the present invention have conducted intensive studies on the deterioration of electrical insulation caused by poor sintering of an insulating film and the warpage of a substrate.
By adding a small amount of ZrO 2 to a glass containing SiO 2 , PbO, CaO, and Na 2 O,
ZrO 2 becomes a nucleus and promotes crystallization of the glass to a certain level, and can secure the melting property of the glass, thereby solving the density variation of the insulating film, especially the density reduction,
The inventors have found that the insulating property can be improved and the warpage of the substrate can be suppressed, and the present invention has been achieved.

【0012】即ち、本発明のセラミック回路基板は、基
板表面に形成された導体を絶縁膜で被覆してなるセラミ
ック回路基板において、前記絶縁膜が、少なくともSi
2、PbO、CaO、Na2 Oを含有するガラス成分
を35〜60重量%、セラミックフィラー成分としてA
2 3 を40〜65重量%、前記ガラス成分100重
量部に対してZrO2 を0.001〜0.02重量部の
割合で添加してなる組成物を焼成してなり、結晶相とし
て少なくともラブラドライトが存在するものである。
That is, a ceramic circuit board according to the present invention is a ceramic circuit board in which a conductor formed on a substrate surface is covered with an insulating film.
35-60% by weight of a glass component containing O 2 , PbO, CaO, and Na 2 O, and A as a ceramic filler component
l 2 O 3 and 40 to 65 wt%, the by firing a composition to the glass component to 100 parts by weight obtained by adding a ZrO 2 in an amount of 0.001 to 0.02 parts by weight, as a crystal phase At least Labradorite is present.

【0013】[0013]

【作用】本発明のセラミック回路基板は、基板表面に形
成された導体を絶縁膜で被覆してなるセラミック回路基
板において、絶縁膜の少なくともSiO2 、PbO、C
aO、Na2 Oを含有するガラス成分に対して、ZrO
2 を微量含有せしめることにより、低温においてZrO
2 が核となりガラス成分のラブラドライトへの結晶化を
促進するとともに、ZrO2 添加量を一定以下とするこ
とにより、ガラス成分の過度のラブラドライトへの結晶
化を抑制し、ガラス成分の溶融性を確保し、Al2 3
粒子との濡れ性を向上することが可能となる。
According to the ceramic circuit board of the present invention, there is provided a ceramic circuit board comprising a conductor formed on a substrate surface covered with an insulating film, wherein at least SiO 2 , PbO, C
aO-, with respect to the glass component containing Na 2 O, ZrO
By adding a small amount of 2 , ZrO
2 acts as a nucleus to promote the crystallization of the glass component into labradorite, and by limiting the amount of ZrO 2 to a certain amount or less, suppresses excessive crystallization of the glass component into labradorite and secures the meltability of the glass component. And Al 2 O 3
It is possible to improve the wettability with the particles.

【0014】これにより、1050℃以下で低温焼成し
た場合でも、絶縁膜の密度バラツキがなく、しかも高い
焼成体密度を有する絶縁膜を得ることができ、これによ
り、絶縁膜の電気的絶縁性を向上し、絶縁膜が形成され
た基板の反り変形を抑制することができる。
As a result, even when the film is fired at a low temperature of 1050 ° C. or less, it is possible to obtain an insulating film having no variation in the density of the insulating film and having a high fired body density. Thus, warpage of the substrate on which the insulating film is formed can be suppressed.

【0015】[0015]

【発明の実施の形態】本発明のセラミック回路基板の絶
縁膜は、少なくともSiO2 、PbO、CaO、Na2
Oを含有するガラス成分を35〜60重量%、セラミッ
クフィラー成分としてAl2 3 を40〜65重量%、
ガラス成分100重量部に対してZrO2 を0.001
〜0.02重量部の割合で添加してなる組成物を焼成し
てなり、結晶相として少なくともラブラドライトが存在
するものである。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The insulating film of the ceramic circuit board of the present invention is made of at least SiO 2 , PbO, CaO, Na 2
35 to 60% by weight of a glass component containing O, 40 to 65% by weight of Al 2 O 3 as a ceramic filler component,
0.001 parts by weight of ZrO 2 with respect to 100 parts by weight of the glass component
It is obtained by calcining a composition added at a ratio of about 0.02 parts by weight, and at least labradorite is present as a crystal phase.

【0016】本発明のセラミック回路基板は、表面に例
えば、Ag、Cu、Au等の導体が形成されており、こ
の導体の一部または全部が絶縁膜により被覆されている
ものである。また、本発明のセラミック回路基板は、表
面の導体を絶縁膜が被覆していれば良く、内部に内部配
線、内部導体、内部電極を有する必要はない。従って、
セラミック回路基板は、単層体または内部配線、内部導
体、内部電極を有する積層体であっても良い。
The ceramic circuit board of the present invention has a conductor such as Ag, Cu, Au or the like formed on the surface, and a part or all of the conductor is covered with an insulating film. The ceramic circuit board of the present invention only needs to cover the conductor on the surface with an insulating film, and does not need to have internal wiring, internal conductors, and internal electrodes inside. Therefore,
The ceramic circuit board may be a single-layer body or a laminate having internal wiring, internal conductors, and internal electrodes.

【0017】ここで、SiO2 、PbO、CaO、Na
2 Oを含有するガラス成分を35〜60重量%含有せし
めたのは、ガラス成分が35重量%よりも少ない場合
(Al2 3 が65重量%よりも多い場合)には、10
50℃以下で低温焼成した場合に緻密な焼結体が得られ
ず、60重量%よりも多い場合(Al2 3 が40重量
%よりも少ない場合)には、緻密な焼結体が得られず、
十分な材料強度が得られないからである。ガラス成分と
アルミナとの比は、緻密な焼結体で十分な材料強度を得
るという観点から、ガラス成分を44〜50重量%、A
2 3 を56〜60重量%含有することが望ましい。
Here, SiO 2 , PbO, CaO, Na
The reason why the glass component containing 2 O is contained in an amount of 35 to 60% by weight is that when the glass component is less than 35% by weight (when Al 2 O 3 is more than 65% by weight), 10%
When calcined at a low temperature of 50 ° C. or less, a dense sintered body cannot be obtained, and when it is more than 60% by weight (when Al 2 O 3 is less than 40% by weight), a dense sintered body is obtained. I ca n’t
This is because sufficient material strength cannot be obtained. The ratio of the glass component to alumina is 44 to 50% by weight of the glass component and A in terms of obtaining a sufficient material strength from a dense sintered body.
It is desirable to l 2 O 3 containing 56 to 60 wt%.

【0018】また、ガラス成分100重量部に対してZ
rO2 を0.001〜0.02重量部含有せしめたの
は、ZrO2 量が0.001重量よりも少ない場合に
は、ガラスの結晶化が進まず、再焼成時の変形や焼成後
にガラスが表面に浮く等の問題があり、0.02重量部
よりも多い場合、ガラスの結晶化が進み過ぎ、緻密化に
必要なガラスの流動性を阻害し、緻密な燒結体が得られ
ないからである。ZrO2は、適度に結晶化を促進し、
緻密な焼結体を得るという観点から、ガラス成分100
重量部に対して0.005〜0.015重量部含有せし
めることが望ましい。このようなZrO2 量を得るため
には、製造工程においてZrO2 が混入しないように厳
密に制御する必要がある。
Further, Z is based on 100 parts by weight of the glass component.
The reason for containing 0.001 to 0.02 parts by weight of rO 2 is that when the amount of ZrO 2 is less than 0.001 part by weight, the crystallization of the glass does not proceed, the glass is deformed at the time of refiring, and If the amount is more than 0.02 parts by weight, crystallization of the glass proceeds excessively, hinders the fluidity of the glass required for densification, and a dense sintered body cannot be obtained. It is. ZrO 2 moderately promotes crystallization,
From the viewpoint of obtaining a dense sintered body, the glass component 100
It is desirable to add 0.005 to 0.015 parts by weight based on parts by weight. In order to obtain such an amount of ZrO 2 , it is necessary to strictly control so that ZrO 2 is not mixed in the manufacturing process.

【0019】本発明の絶縁膜においては、結晶相とし
て、Al2 3 と、SiO2 、PbO、CaO、Na2
O、Al2 3 からなるラブラドライトが析出するもの
である。このラブラドライト相は、焼成時において、Z
rO2 が核となることにより結晶化が促進される。しか
しながら、添加されるZrO2 量を0.02重量部以下
とすることにより、ラブラドライト相は、結晶化速度が
適度に抑制され、ガラス成分の溶融性を確保してAl2
3 粒子を十分に濡らし、焼結性を向上して緻密化を促
進する。そして、Al2 3 粒子間にラブラドライト相
が析出し、ZrO2 粒子がラブラドライト相中に存在し
た焼結体が得られる。尚、少量のアモルファスが存在す
る場合もある。
In the insulating film of the present invention, Al 2 O 3 , SiO 2 , PbO, CaO, Na 2
Labradorite composed of O and Al 2 O 3 precipitates. This labradorite phase has a Z
Crystallization is promoted by rO 2 serving as a nucleus. However, by the ZrO 2 amount to be added to or less than 0.02 part by weight, labradorite phase, crystallization speed is moderately suppressed, Al 2 to ensure the meltability of the glass component
It sufficiently wets the O 3 particles, improves sinterability and promotes densification. Then, a Labradorite phase is precipitated between the Al 2 O 3 particles, and a sintered body in which ZrO 2 particles are present in the Labradorite phase is obtained. Incidentally, a small amount of amorphous may be present.

【0020】ラブラドライトはAb50An50〜Ab30
70(Ab:NaAlSi3 8 、An:CaAl2
2 8 )という化学式で表される。即ち、ラブラドラ
イトはNaAlSi3 8 を30〜50モル%、CaA
2 Si2 8 を50〜70モル%からなるものであ
る。
Labradorite is used from Ab 50 An 50 to Ab 30 A
n 70 (Ab: NaAlSi 3 O 8 , An: CaAl 2 S
i 2 O 8 ). That is, Labradorite contains 30 to 50 mol% of NaAlSi 3 O 8 and CaA
The l 2 Si 2 O 8 is made of 50 to 70 mol%.

【0021】また、本発明の絶縁膜は、ガラス成分とし
ては、ガラス成分中において(ガラス成分を100とし
た時)重量比で、SiO2 40〜60重量%、Al2
3 を0〜20重量%、CaO、ZnO及びMgOが合計
で5.5〜30重量%(CaOは必須成分)、PbOを
10〜25重量%、Na2 O、K2 O及びB2 3 が合
計で2〜30重量%(Na2 Oは必須成分)からなる結
晶化ガラスであることが望ましい。これは以下のような
理由による。
In the insulating film of the present invention, as a glass component, 40 to 60% by weight of SiO 2 and Al 2 O in a weight ratio (when the glass component is 100) in the glass component.
3 0-20 wt%, CaO, 5.5 to 30 wt% ZnO and MgO are in total (CaO is an essential component), 10 to 25 wt% of PbO, Na 2 O, K 2 O and B 2 O 3 Is preferably a crystallized glass consisting of 2 to 30% by weight (Na 2 O is an essential component). This is for the following reasons.

【0022】SiO2 量がガラス成分中40重量%以下
の場合は、ガラスの析出結晶量が少なくなり、充分な強
度の焼成体が得られないからである。一方、60重量%
以上の場合は、ガラスの溶融性が悪くなる共に、軟化点
が高くなり、1050℃以下での低温焼成が困難にな
る。
If the amount of SiO 2 is less than 40% by weight in the glass component, the amount of precipitated crystals of the glass will be small, and a fired body with sufficient strength cannot be obtained. On the other hand, 60% by weight
In the above case, the melting property of the glass is deteriorated, the softening point is increased, and it is difficult to perform low-temperature firing at 1050 ° C. or lower.

【0023】また、ガラス成分としてAl2 3 を含有
せしめることにより、焼成時にAl2 3 フィラーとの
濡れ性を促進し、結晶性を向上することができるが、A
23 含有量が20重量%以上の場合は、ガラスの溶
融性が困難になると共に、焼成時にガラスの軟化温度が
高くなるからである。尚、ラブラドライトは、フィラー
成分のAl2 3 とガラス成分のSiO2 、PbO、C
aO、Na2 Oと反応して生成する場合もある。
Also, by incorporating Al 2 O 3 as a glass component, the wettability with the Al 2 O 3 filler during firing can be promoted and the crystallinity can be improved.
When the l 2 O 3 content is 20% by weight or more, the melting property of the glass becomes difficult and the softening temperature of the glass during firing becomes high. Labradorite is composed of Al 2 O 3 as a filler component and SiO 2 , PbO, and C as glass components.
It may be produced by reacting with aO and Na 2 O.

【0024】ガラス成分中に、CaO、ZnO及びMg
O(但し、CaOは必須成分)を含有せしめたのは、こ
れらは、ガラスの粘性特性を調整できるからである。そ
して、その合計量を5.5〜30重量%としたのは、C
aO、ZnO及びMgOの合計量が5.5重量%よりも
少ない場合や30重量%よりも多い場合には、適度なガ
ラスの粘性を得ることができず、ガラス化、結晶化が阻
害され緻密な燒結体が得られないからである。
In the glass component, CaO, ZnO and Mg
O (CaO is an essential component) is included because they can adjust the viscous properties of the glass. The reason why the total amount is 5.5 to 30% by weight is that C
When the total amount of aO, ZnO and MgO is less than 5.5% by weight or more than 30% by weight, it is not possible to obtain an appropriate viscosity of glass, and vitrification and crystallization are inhibited, resulting in a dense structure. This is because a sintered body cannot be obtained.

【0025】ガラス成分中にPbOを10〜25重量%
含有せしめたのは、その含有量が10重量%よりも少な
い場合には、ガラスの結晶化が困難であり、25重量%
よりも多い場合にはガラスの軟化点が低くなりすぎるか
らである。
10 to 25% by weight of PbO in the glass component
When the content is less than 10% by weight, crystallization of the glass is difficult, and the content is 25% by weight.
If the amount is larger than the above range, the softening point of the glass becomes too low.

【0026】ガラス成分中にNa2 O、K2 O及びB2
3 を合計で2〜30重量%含有せしめたのは、2重量
%よりも少ない場合や30重量%よりも多い場合には、
ガラスの軟化点が高くなり、1050℃以下においてA
2 3 粒子を十分に濡らすことができなくなるからで
ある。
In the glass component, Na 2 O, K 2 O and B 2
The total content of O 3 from 2 to 30% by weight is less than 2% by weight or more than 30% by weight.
The softening point of the glass increases, and A
This is because the l 2 O 3 particles cannot be sufficiently wetted.

【0027】本発明の絶縁膜は以下のようにして得るこ
とができる。
The insulating film of the present invention can be obtained as follows.

【0028】先ず、SiO2 粉末、Al2 3 粉末、C
aCO3 粉末、ZnO粉末、MgCO3 粉末、PbO粉
末、Na2 CO3 粉末、K2 CO3 粉末及びB2 3
末を準備し、これらを上記したように所定量秤量し、こ
れらを混合し、ルツボに入れ1500〜1600℃で2
〜3時間溶融し、母ガラスを作製する。その母ガラスを
所定の粒径になるまで粉砕する。
First, SiO 2 powder, Al 2 O 3 powder, C
ACO 3 powder, ZnO powder, prepared MgCO 3 powder, PbO powder, Na 2 CO 3 powder, a K 2 CO 3 powder and B 2 O 3 powder, they were weighed in a predetermined amount as described above, these were mixed Put in a crucible, 1500 ~ 1600 ℃ 2
Melt for ~ 3 hours to produce mother glass. The mother glass is pulverized to a predetermined particle size.

【0029】そして、このガラス粉末と、Al2 3
末を混合するとともに、ガラス粉末に対して所定量Zr
2 粉末を添加混合する。ここでZrO2 粉末の平均粒
径は、3μm以下であることが望ましい。これは、Zr
2 粉末が3μmよりも大きい場合には、ZrO2 粉末
の表面活性力が小さいため、焼成時に核となりにくく、
ラブラドライトへの結晶化を促進できないからである。
尚、ZrO2 は、焼結体中においても平均結晶粒径が3
μm以下として存在する。そのガラスセラミック粉末に
有機バインダーと有機溶剤を添加し、3本ロールミルで
混合し、ガラスセラミック粉末をペースト化する。その
ガラスセラミックペーストをスクリーン印刷等の公知の
印刷法により、目的とする表面の導体(表層に露出した
配線も含む)上に印刷する。その後、大気中等の最適な
焼成雰囲気中において、1050℃以下の焼成温度で1
〜5時間焼成し、基板、表面導体、絶縁膜を同時に焼成
する。
Then, this glass powder and Al 2 O 3 powder are mixed, and a predetermined amount Zr is added to the glass powder.
Add and mix O 2 powder. Here, the average particle size of the ZrO 2 powder is desirably 3 μm or less. This is Zr
When the O 2 powder is larger than 3 μm, the surface activity of the ZrO 2 powder is small, so that it hardly becomes a nucleus during firing,
This is because crystallization to labradorite cannot be promoted.
ZrO 2 has an average crystal grain size of 3 even in the sintered body.
It exists as μm or less. An organic binder and an organic solvent are added to the glass ceramic powder and mixed by a three-roll mill to form the glass ceramic powder into a paste. The glass ceramic paste is printed on a target surface conductor (including a wiring exposed on the surface layer) by a known printing method such as screen printing. Then, in an optimal firing atmosphere such as the air, at a firing temperature of 1050 ° C. or less,
Firing for up to 5 hours, simultaneously firing the substrate, the surface conductor, and the insulating film.

【0030】図1に絶縁膜を用いたセラミック回路基板
の断面図を示す。基板は複数のガラスセラミックス層が
多層化された積層セラミック回路基板を例にした。
FIG. 1 is a sectional view of a ceramic circuit board using an insulating film. The substrate is a multilayer ceramic circuit board in which a plurality of glass ceramic layers are multilayered.

【0031】図1において、符号10は低温焼成セラミ
ック回路基板であり、この低温焼成セラミック回路基板
10は、積層体(基板)1と表面に形成された表層導体
2、内層導体3、ビアホール導体4及び絶縁膜5から構
成されている、積層体1は、例えば、7層のガラスセラ
ミック層1a〜1gからなり、その層1a〜1g間には
内層導体3が形成されている。また各ガラスセラミック
層1a〜1gにはその厚み方向に内層導体3間を接続す
るため、また内層導体3と表層導体2とを接続するため
のビヤホール導体4が形成されている。
In FIG. 1, reference numeral 10 denotes a low-temperature fired ceramic circuit board. The low-temperature fired ceramic circuit board 10 includes a laminate (substrate) 1 and surface conductors 2, inner-layer conductors 3, and via-hole conductors 4 formed on the surface. The laminated body 1 including the insulating film 5 includes, for example, seven glass ceramic layers 1a to 1g, and an inner conductor 3 is formed between the layers 1a to 1g. In each of the glass ceramic layers 1a to 1g, a via-hole conductor 4 for connecting the inner layer conductor 3 in the thickness direction thereof and for connecting the inner layer conductor 3 and the surface layer conductor 2 is formed.

【0032】上記のセラミック回路基板10の製造方法
を簡単に説明すると、まず、ガラスセラミック層となる
グリーンシートを作製する。例えばグリーンシートは、
所定のガラスセラミック粉末と有機バインダーと有機溶
剤及び必要に応じて可塑剤とを混合し、スラリー化す
る。このスラリーをドクターブレード法などによりテー
プ成形を行い、所定寸法に切断しグリーンシートを作製
する。
The method of manufacturing the ceramic circuit board 10 will be briefly described. First, a green sheet to be a glass ceramic layer is manufactured. For example, green sheet
A predetermined glass ceramic powder, an organic binder, an organic solvent and, if necessary, a plasticizer are mixed to form a slurry. The slurry is formed into a tape by a doctor blade method or the like, and cut into a predetermined size to produce a green sheet.

【0033】次に、内層導体3間を接続したり、内層導
体3と表層導体2とを接続するビアホール導体4となる
貫通孔を、グリーンシートの所定の位置にパンチング等
により作製する。
Next, through holes serving as via hole conductors 4 for connecting the inner layer conductors 3 and connecting the inner layer conductors 3 and the surface layer conductors 2 are formed at predetermined positions of the green sheet by punching or the like.

【0034】導電性ペーストを、内部側のガラスセラミ
ック層1a〜1fとなるグリーンシートの貫通孔に充填
するとともに、そのグリーンシート上に所定形状の内層
導体3となる導体膜を印刷形成する。
A conductive paste is filled into the through holes of the green sheets to be the glass ceramic layers 1a to 1f on the inner side, and a conductor film to be the inner conductor 3 having a predetermined shape is formed on the green sheets by printing.

【0035】次に導電性ペーストを用いて、表層のガラ
スセラミック層1a、1gとなるグリーンシート上に所
定形状の表層導体2となる導体膜を印刷形成する。ま
た、表面に露出する導体膜の一部を覆うように所定形状
の絶縁膜5となるガラスセラミックペーストを印刷乾燥
させる。
Next, using a conductive paste, a conductor film serving as a surface conductor 2 having a predetermined shape is formed by printing on green sheets serving as the surface glass ceramic layers 1a and 1g. In addition, a glass ceramic paste that becomes the insulating film 5 having a predetermined shape is printed and dried so as to cover a part of the conductor film exposed on the surface.

【0036】このようにして得られたグリーンシートを
積層順序に応じて積層し、積層成形体を形成して、一体
的に焼成する。以上の製造工程によってセラミック回路
基板10は製造される。
The green sheets thus obtained are laminated according to the laminating order to form a laminated molded body, which is integrally fired. The ceramic circuit board 10 is manufactured by the above manufacturing steps.

【0037】[0037]

【実施例】先ず、純度99%以上のSiO2 粉末、Al
2 3 粉末、CaCO3 粉末、ZnO粉末、MgCO3
粉末、PbO粉末、Na2 CO3 粉末、K2 CO3 粉末
及びB2 3 粉末を準備し、これらを表1に示す酸化物
換算で表1に示す組成となるように所定量秤量し、これ
らをAl2 3 ボールを用いたボールミルにて混合し、
白金ルツボに入れ1550℃で2時間溶融し、母ガラス
を作製した。その母ガラスを所定の粒径になるまで、上
記したボールミルにて粉砕した。
EXAMPLE First, SiO 2 powder having a purity of 99% or more, Al
2 O 3 powder, CaCO 3 powder, ZnO powder, MgCO 3
A powder, a PbO powder, a Na 2 CO 3 powder, a K 2 CO 3 powder and a B 2 O 3 powder were prepared, and weighed in a predetermined amount so as to have a composition shown in Table 1 in terms of an oxide shown in Table 1. These are mixed in a ball mill using Al 2 O 3 balls,
It was put in a platinum crucible and melted at 1550 ° C. for 2 hours to prepare a mother glass. The mother glass was pulverized by the above-mentioned ball mill until it reached a predetermined particle size.

【0038】そして、このガラス粉末と、Al2 3
末を混合するとともに、ガラス粉末に対して、平均粒径
が表1に示すようなZrO2 粉末を、ガラス成分100
重量部に対して表1に示す量だけ添加し、上記したボー
ルミルにて混合した。得られたガラスセラミック粉末に
有機バインダーとしてエチルセルロースと、有機溶剤と
して2・2・4−トリメチル−3・3−ペンタジオール
モノイソブチレートを添加し、粉末及び有機バインダー
の凝集体がなくなるまで3本ロールミルで混合し、ガラ
ス粉末をペースト化し、絶縁膜用のガラスセラミックペ
ーストを作製した。
Then, this glass powder and Al 2 O 3 powder were mixed, and ZrO 2 powder having an average particle size shown in Table 1 was added to the glass powder to obtain a glass component of 100%.
The amount shown in Table 1 was added to the parts by weight and mixed with the above-mentioned ball mill. Ethyl cellulose as an organic binder and 2,2.4-trimethyl-3,3-pentadiol monoisobutyrate as an organic solvent are added to the obtained glass ceramic powder, and three pieces are added until the aggregate of the powder and the organic binder disappears. The mixture was mixed by a roll mill, and the glass powder was made into a paste to prepare a glass ceramic paste for an insulating film.

【0039】次に、セラミックフィラーとしてAl2
3 を、ガラス成分としてホウケイ酸鉛ガラスを用い、セ
ラミックフィラーを55重量%、ガラス成分を45重量
%の割合で含有するガラスセラミック材料に、上記した
有機バインダー、有機溶剤を添加してなるペーストを、
ドクターブレード法により薄層化し、基板用のグリーン
シートを作製した。
Next, Al 2 O is used as a ceramic filler.
3 is a paste obtained by adding the above organic binder and organic solvent to a glass ceramic material containing lead borosilicate glass as a glass component, a ceramic filler at 55% by weight, and a glass component at a ratio of 45% by weight. ,
The layer was thinned by a doctor blade method to produce a green sheet for a substrate.

【0040】この後、ビアホール導体を作製するための
貫通孔を、グリーンシートの所定の位置にパンチング等
により作製し、Agからなる導電性ペーストを貫通孔に
充填し、所定形状の内層導体となる導体膜を印刷形成し
た。
Thereafter, a through hole for forming a via hole conductor is formed at a predetermined position of the green sheet by punching or the like, and a conductive paste made of Ag is filled in the through hole to form an inner layer conductor having a predetermined shape. A conductor film was formed by printing.

【0041】一方、最上層、最下層となるグリーンシー
トに、表層導体となるAgからなる導電性ペーストを用
いて所定形状の導体膜を印刷形成し、表面に露出する導
体膜の一部を覆うように、上記絶縁膜用のガラスセラミ
ックペーストを印刷し、乾燥させた。
On the other hand, a conductive film of a predetermined shape is printed and formed on a green sheet as an uppermost layer and a lowermost layer using a conductive paste made of Ag as a surface layer conductor, and covers a part of the conductive film exposed on the surface. Thus, the glass ceramic paste for an insulating film was printed and dried.

【0042】導電性ペーストが充填され、所定形状の導
体膜が形成されたグリーンシートを複数積層するととも
に、最上層および最下層に、表層導体となる導体膜の一
部をガラスセラミックペーストで被覆したグリーンシー
トを積層し、積層成形体を作製した。
A plurality of green sheets filled with a conductive paste and formed with a conductive film having a predetermined shape were laminated, and the uppermost layer and the lowermost layer were partially covered with a conductive film serving as a surface conductor with a glass ceramic paste. Green sheets were laminated to produce a laminated molded body.

【0043】この後、大気中400℃で脱バインダー処
理し、さらに900℃で焼成し、図1に示すようなセラ
ミック回路基板を作製した。尚、ガラスセラミック層1
a〜1gの厚みは1.5mmであり、セラミック回路基
板の大きさは、縦10mm、横10mm、厚み12mm
であった。
Thereafter, a binder removal treatment was carried out at 400 ° C. in the air, and the resultant was baked at 900 ° C. to produce a ceramic circuit board as shown in FIG. In addition, the glass ceramic layer 1
The thickness of a to 1 g is 1.5 mm, and the size of the ceramic circuit board is 10 mm in length, 10 mm in width, and 12 mm in thickness.
Met.

【0044】このセラミック回路基板の反りを、反りゲ
ージを用い、セラミック回路基板表面を縦方向にずらし
ていき、反りの最大値を求めることにより評価した。そ
の結果を表1に記載した。
The warpage of the ceramic circuit board was evaluated by using a warp gauge, shifting the surface of the ceramic circuit board in the vertical direction, and obtaining the maximum value of the warp. The results are shown in Table 1.

【0045】尚、上記絶縁膜を形成するガラスセラミッ
クペーストをドクターブレード法により塗布し、約1m
m厚の塗布膜を作製した。その塗布膜を乾燥し、金型プ
レス機により直径30mmに打ち抜き、大気中400℃
で脱バインダー処理し、さらに900℃で焼成し、その
焼成体密度をアルキメデス法により評価した。
The glass ceramic paste for forming the above-mentioned insulating film is applied by a doctor blade method, and is applied for about 1 m.
An m-thick coating film was produced. The coating film was dried, punched out to a diameter of 30 mm by a die press, and 400 ° C. in air.
, And fired at 900 ° C., and the fired body density was evaluated by Archimedes' method.

【0046】[0046]

【表1】 [Table 1]

【0047】この表1から、本発明の試料の絶縁膜の焼
成体密度は3.17〜3.20g/cm3 と高い値を示
し、安定しており、この結果、セラミック回路基板の反
り変形が40μm以下と小さいことが判る。
From Table 1, the density of the fired body of the insulating film of the sample of the present invention is as high as 3.17 to 3.20 g / cm 3 , which is stable. Is as small as 40 μm or less.

【0048】一方、試料No.13は、ZrO2 量が0.
02重量部よりも多いため、過多のZrO2 が焼成時の
結晶化の核となり緻密化を阻害するため、焼成体密度は
本発明の試料と比較して3.10g/cm3 と低いこと
が判る。また、ZrO2 量が多くなる程焼成体密度が低
下することが判る。
On the other hand, in Sample No. 13, the amount of ZrO 2 was 0.1%.
Since the amount is more than 02 parts by weight, excessive ZrO 2 becomes a nucleus for crystallization during firing and inhibits densification, so that the density of the fired body is as low as 3.10 g / cm 3 as compared with the sample of the present invention. I understand. Also, it can be seen that the density of the fired body decreases as the amount of ZrO 2 increases.

【0049】さらに、平均粒径が3μm以上のZrO2
粉末を用いた試料No.6、8では、ガラスの結晶化が進
まず焼成体密度が低いが、平均粒径が3μm以下のZr
2粉末を用いた試料ではより焼成体密度が高くなるこ
とが判る。尚、本発明の試料の絶縁膜については、ラブ
ラドライトが析出していることをX線回折により確認し
た。
Further, ZrO 2 having an average particle diameter of 3 μm or more
In Samples Nos. 6 and 8 using powder, crystallization of glass did not proceed and the density of the fired body was low, but Zr having an average particle size of 3 μm or less was used.
It can be seen that the density of the fired body is higher in the sample using the O 2 powder. In addition, about the insulating film of the sample of this invention, it was confirmed by X-ray diffraction that labradorite was precipitated.

【0050】表1の試料No.3〜13、19について、
ZrO2 量を横軸に、焼成体密度を縦軸に表したグラフ
を図2に示す。この図2および表1から、ZrO2 量を
管理することにより、絶縁膜の焼成体密度のバラツキ、
特に密度低下を解決でき、その絶縁膜を用いたセラミッ
ク回路基板の反り変形を抑制できることが判る。
For samples Nos. 3 to 13 and 19 in Table 1,
FIG. 2 is a graph showing the amount of ZrO 2 on the horizontal axis and the density of the fired body on the vertical axis. From FIG. 2 and Table 1, by controlling the amount of ZrO 2 , the variation in the density of the fired body of the insulating film,
In particular, it can be understood that a decrease in density can be solved, and warpage of a ceramic circuit board using the insulating film can be suppressed.

【0051】[0051]

【発明の効果】本発明のセラミック回路基板では、絶縁
膜の組成を、少なくともSiO2 、PbO、CaO、N
2 Oを含有するガラス成分に対して、微量のZrO2
を含有せしめることにより、低温においてZrO2 が核
となりガラス成分のラブラドライトへの結晶化を促進す
るとともに、ZrO2 を一定量以下含有せしめることに
より、ガラス成分の過度のラブラドライトへの結晶化を
抑制し、ガラス成分の溶融性を確保し、Al2 3 粒子
との濡れ性を向上することができる。これにより、絶縁
膜の焼成後の密度バラツキ、特に密度低下を解決し、セ
ラミック回路基板の反り変形を抑制し、安定なセラミッ
ク回路基板を提供できる。
According to the ceramic circuit board of the present invention, the composition of the insulating film is at least SiO 2 , PbO, CaO, N
a small amount of ZrO 2 with respect to the glass component containing a 2 O
By containing ZrO 2 as a nucleus at a low temperature to promote crystallization of the glass component into labradorite, and by including a certain amount or less of ZrO 2 , excessive crystallization of the glass component into labradorite is suppressed. In addition, the melting property of the glass component can be ensured, and the wettability with the Al 2 O 3 particles can be improved. As a result, it is possible to solve the unevenness of the density of the insulating film after firing, especially the decrease in the density, suppress the warpage of the ceramic circuit board, and provide a stable ceramic circuit board.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明のセラミック回路基板の断面図を示す。FIG. 1 shows a sectional view of a ceramic circuit board of the present invention.

【図2】ZrO2 量を横軸に、焼成体密度を縦軸に表し
たグラフである。
FIG. 2 is a graph showing the amount of ZrO 2 on the horizontal axis and the density of the fired body on the vertical axis.

【符号の説明】[Explanation of symbols]

1・・・積層体 2・・・表層導体 3・・・内層導体 4・・・ビアホール導体 5・・・絶縁膜 10・・・セラミック回路基板 DESCRIPTION OF SYMBOLS 1 ... Laminated body 2 ... Surface conductor 3 ... Inner layer conductor 4 ... Via hole conductor 5 ... Insulating film 10 ... Ceramic circuit board

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】基板表面に形成された導体を絶縁膜で被覆
してなるセラミック回路基板において、前記絶縁膜が、
少なくともSiO2 、PbO、CaO、Na2Oを含有
するガラス成分を35〜60重量%、セラミックフィラ
ー成分としてAl2 3 を40〜65重量%、前記ガラ
ス成分100重量部に対してZrO2 を0.001〜
0.02重量部の割合で添加してなる組成物を焼成して
なり、結晶相として少なくともラブラドライトが存在す
ることを特徴とするセラミック回路基板。
1. A ceramic circuit board comprising a conductor formed on a substrate surface covered with an insulating film, wherein the insulating film is
35 to 60% by weight of a glass component containing at least SiO 2 , PbO, CaO and Na 2 O, 40 to 65% by weight of Al 2 O 3 as a ceramic filler component, and ZrO 2 to 100 parts by weight of the glass component 0.001
A ceramic circuit board, characterized in that at least labradorite is present as a crystal phase by firing a composition added at a ratio of 0.02 parts by weight.
JP04367597A 1997-02-27 1997-02-27 Ceramic circuit board Expired - Fee Related JP3548366B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP04367597A JP3548366B2 (en) 1997-02-27 1997-02-27 Ceramic circuit board

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2361811A (en) * 2000-03-02 2001-10-31 Murata Manufacturing Co Insulating thick film composition, ceramic electronic device and apparatus using the same.
CN108675770A (en) * 2018-06-12 2018-10-19 佛山市华强协兴陶瓷有限公司 A kind of lead oxide ceramics of metallic lead toughening and preparation method thereof
WO2023014039A1 (en) * 2021-08-02 2023-02-09 엘지이노텍 주식회사 Circuit board and semiconductor package comprising same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2361811A (en) * 2000-03-02 2001-10-31 Murata Manufacturing Co Insulating thick film composition, ceramic electronic device and apparatus using the same.
GB2361811B (en) * 2000-03-02 2002-09-04 Murata Manufacturing Co Insulating thick film composition, ceramic electronic device using the same, and electronic apparatus
US6452264B2 (en) 2000-03-02 2002-09-17 Murata Manufacturing Co. Ltd Insulating thick film composition, ceramic electronic device using the same, and electronic apparatus
CN108675770A (en) * 2018-06-12 2018-10-19 佛山市华强协兴陶瓷有限公司 A kind of lead oxide ceramics of metallic lead toughening and preparation method thereof
CN108675770B (en) * 2018-06-12 2021-06-04 佛山市玉矶材料科技有限公司 Preparation method of lead oxide ceramic
WO2023014039A1 (en) * 2021-08-02 2023-02-09 엘지이노텍 주식회사 Circuit board and semiconductor package comprising same

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