JPH10233378A - 浅い溝埋込み分離処理のための高選択性スラリー - Google Patents

浅い溝埋込み分離処理のための高選択性スラリー

Info

Publication number
JPH10233378A
JPH10233378A JP425798A JP425798A JPH10233378A JP H10233378 A JPH10233378 A JP H10233378A JP 425798 A JP425798 A JP 425798A JP 425798 A JP425798 A JP 425798A JP H10233378 A JPH10233378 A JP H10233378A
Authority
JP
Japan
Prior art keywords
slurry
alkalinized
oxide
nitride
selectivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP425798A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10233378A5 (https=
Inventor
Jennifer A Sees
エイ．シーズ ジェニファー
Lindsey H Hall
エイチ．ホール リンゼイ
Jagdish Prasad
プラサド ジャグディシュ
Ashutosh Misra
ミスラ アシュトシュ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPH10233378A publication Critical patent/JPH10233378A/ja
Publication of JPH10233378A5 publication Critical patent/JPH10233378A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
JP425798A 1997-01-10 1998-01-12 浅い溝埋込み分離処理のための高選択性スラリー Pending JPH10233378A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US3502397P 1997-01-10 1997-01-10
US035023 1997-01-10

Publications (2)

Publication Number Publication Date
JPH10233378A true JPH10233378A (ja) 1998-09-02
JPH10233378A5 JPH10233378A5 (https=) 2005-08-04

Family

ID=21880142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP425798A Pending JPH10233378A (ja) 1997-01-10 1998-01-12 浅い溝埋込み分離処理のための高選択性スラリー

Country Status (3)

Country Link
EP (1) EP0853110B1 (https=)
JP (1) JPH10233378A (https=)
DE (1) DE69830676D1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002346912A (ja) * 2001-05-18 2002-12-04 Nippon Sheet Glass Co Ltd 情報記録媒体用ガラス基板及びその製造方法
JP2011103410A (ja) * 2009-11-11 2011-05-26 Kuraray Co Ltd 化学的機械的研磨用スラリー
JP2011119405A (ja) * 2009-12-02 2011-06-16 Shin Etsu Handotai Co Ltd シリコンウェーハ研磨用研磨剤およびシリコンウェーハの研磨方法
JPWO2011058952A1 (ja) * 2009-11-11 2013-04-04 株式会社クラレ 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2785614B1 (fr) * 1998-11-09 2001-01-26 Clariant France Sa Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium
KR20020086949A (ko) 2000-04-11 2002-11-20 캐보트 마이크로일렉트로닉스 코포레이션 실리콘 옥사이드의 선택적 제거를 위한 시스템
DE10063492A1 (de) * 2000-12-20 2002-06-27 Bayer Ag Verfahren zum chemisch-mechanischen Polieren von Isolationsschichten nach der STI-Technik bei erhöhten Temperaturen
KR100444302B1 (ko) * 2001-12-29 2004-08-11 주식회사 하이닉스반도체 반도체 소자 제조방법
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
HU164439B (https=) * 1972-06-14 1974-02-28
JPS5935429A (ja) * 1982-08-12 1984-02-27 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 半導体ウエハの製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002346912A (ja) * 2001-05-18 2002-12-04 Nippon Sheet Glass Co Ltd 情報記録媒体用ガラス基板及びその製造方法
JP2011103410A (ja) * 2009-11-11 2011-05-26 Kuraray Co Ltd 化学的機械的研磨用スラリー
JPWO2011058952A1 (ja) * 2009-11-11 2013-04-04 株式会社クラレ 化学的機械的研磨用スラリー並びにそれを用いる基板の研磨方法
US9536752B2 (en) 2009-11-11 2017-01-03 Kuraray Co., Ltd. Slurry for chemical mechanical polishing and polishing method for substrate using same
JP2011119405A (ja) * 2009-12-02 2011-06-16 Shin Etsu Handotai Co Ltd シリコンウェーハ研磨用研磨剤およびシリコンウェーハの研磨方法

Also Published As

Publication number Publication date
EP0853110B1 (en) 2005-06-29
EP0853110A1 (en) 1998-07-15
DE69830676D1 (de) 2005-08-04

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