DE69830676D1 - CMP Suspension mit hoher Selektivität - Google Patents

CMP Suspension mit hoher Selektivität

Info

Publication number
DE69830676D1
DE69830676D1 DE69830676T DE69830676T DE69830676D1 DE 69830676 D1 DE69830676 D1 DE 69830676D1 DE 69830676 T DE69830676 T DE 69830676T DE 69830676 T DE69830676 T DE 69830676T DE 69830676 D1 DE69830676 D1 DE 69830676D1
Authority
DE
Germany
Prior art keywords
high selectivity
cmp suspension
cmp
suspension
selectivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69830676T
Other languages
German (de)
English (en)
Inventor
Jennifer A Sees
Jagdish Prasad
Lindsey H Hall
Ashutosh Misra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69830676D1 publication Critical patent/DE69830676D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
DE69830676T 1997-01-10 1998-01-09 CMP Suspension mit hoher Selektivität Expired - Lifetime DE69830676D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US3502397P 1997-01-10 1997-01-10

Publications (1)

Publication Number Publication Date
DE69830676D1 true DE69830676D1 (de) 2005-08-04

Family

ID=21880142

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69830676T Expired - Lifetime DE69830676D1 (de) 1997-01-10 1998-01-09 CMP Suspension mit hoher Selektivität

Country Status (3)

Country Link
EP (1) EP0853110B1 (https=)
JP (1) JPH10233378A (https=)
DE (1) DE69830676D1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2785614B1 (fr) * 1998-11-09 2001-01-26 Clariant France Sa Nouveau procede de polissage mecano-chimique selectif entre une couche d'oxyde de silicium et une couche de nitrure de silicium
KR20020086949A (ko) 2000-04-11 2002-11-20 캐보트 마이크로일렉트로닉스 코포레이션 실리콘 옥사이드의 선택적 제거를 위한 시스템
DE10063492A1 (de) * 2000-12-20 2002-06-27 Bayer Ag Verfahren zum chemisch-mechanischen Polieren von Isolationsschichten nach der STI-Technik bei erhöhten Temperaturen
JP2002346912A (ja) * 2001-05-18 2002-12-04 Nippon Sheet Glass Co Ltd 情報記録媒体用ガラス基板及びその製造方法
KR100444302B1 (ko) * 2001-12-29 2004-08-11 주식회사 하이닉스반도체 반도체 소자 제조방법
US7071105B2 (en) 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
KR101359092B1 (ko) 2009-11-11 2014-02-05 가부시키가이샤 구라레 화학적 기계적 연마용 슬러리 및 그것을 이용하는 기판의 연마 방법
JP5481166B2 (ja) * 2009-11-11 2014-04-23 株式会社クラレ 化学的機械的研磨用スラリー
JP5321430B2 (ja) * 2009-12-02 2013-10-23 信越半導体株式会社 シリコンウェーハ研磨用研磨剤およびシリコンウェーハの研磨方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
HU164439B (https=) * 1972-06-14 1974-02-28
JPS5935429A (ja) * 1982-08-12 1984-02-27 インタ−ナシヨナル　ビジネス　マシ−ンズ　コ−ポレ−シヨン 半導体ウエハの製造方法

Also Published As

Publication number Publication date
EP0853110B1 (en) 2005-06-29
EP0853110A1 (en) 1998-07-15
JPH10233378A (ja) 1998-09-02

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Legal Events

Date Code Title Description
8332 No legal effect for de