JPH10223375A - Organic el element and manufacture thereof - Google Patents
Organic el element and manufacture thereofInfo
- Publication number
- JPH10223375A JPH10223375A JP9033365A JP3336597A JPH10223375A JP H10223375 A JPH10223375 A JP H10223375A JP 9033365 A JP9033365 A JP 9033365A JP 3336597 A JP3336597 A JP 3336597A JP H10223375 A JPH10223375 A JP H10223375A
- Authority
- JP
- Japan
- Prior art keywords
- transparent electrode
- insulator
- transparent
- thin film
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000463 material Substances 0.000 claims abstract description 51
- 239000012212 insulator Substances 0.000 claims abstract description 50
- 239000007772 electrode material Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 11
- 238000001704 evaporation Methods 0.000 claims abstract description 9
- 230000008020 evaporation Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 44
- 239000010409 thin film Substances 0.000 claims description 42
- 239000004020 conductor Substances 0.000 claims description 30
- 238000007740 vapor deposition Methods 0.000 claims description 17
- 230000000873 masking effect Effects 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 11
- 239000011347 resin Substances 0.000 abstract description 10
- 229920005989 resin Polymers 0.000 abstract description 10
- 239000010453 quartz Substances 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 23
- 239000010408 film Substances 0.000 description 7
- 238000005498 polishing Methods 0.000 description 6
- 230000005525 hole transport Effects 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000006617 triphenylamine group Chemical group 0.000 description 2
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 1
- ZMLPKJYZRQZLDA-UHFFFAOYSA-N 1-(2-phenylethenyl)-4-[4-(2-phenylethenyl)phenyl]benzene Chemical group C=1C=CC=CC=1C=CC(C=C1)=CC=C1C(C=C1)=CC=C1C=CC1=CC=CC=C1 ZMLPKJYZRQZLDA-UHFFFAOYSA-N 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum chelate complex Chemical class 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 150000002979 perylenes Chemical class 0.000 description 1
- 150000003557 thiazoles Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】この発明は、平面光源やディ
スプレイ、その他所定のパターンの発光表示に用いられ
る有機EL素子とその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flat light source, a display, and an organic EL element used for light emission display of a predetermined pattern, and a method of manufacturing the same.
【0002】[0002]
【従来の技術】従来、例えばドットマトリクス発光させ
る有機EL(エレクトロルミネッセンス)素子は、ガラ
ス基板に透光性のITO膜を一面に形成し、このITO
膜をストライプ状にエッチングして透明電極を形成し、
その表面にトリフェニルアミン誘導体(TPD)等のホ
ール輸送材料を設け、その上に発光材料であるアルミキ
レート錯体(Alq3)等の電子輸送材料を積層してい
る。そしてその表面に、Al,Li,Ag,Mg,In
等の背面電極を、上記透明電極のパターンと直交する方
向にストライプ状に蒸着等で付着して形成している。こ
の有機有機EL素子は、透明電極と背面電極の交点に所
定の電流を流し、発光させるものである。そして、この
有機EL素子の製造は、ガラス基板上に順次上記電極材
料及びEL材料を真空蒸着により形成するものである。2. Description of the Related Art Conventionally, for example, an organic EL (electroluminescence) element which emits a dot matrix has a light-transmitting ITO film formed on a glass substrate on one surface thereof.
The film is etched into stripes to form transparent electrodes,
A hole transport material such as a triphenylamine derivative (TPD) is provided on the surface thereof, and an electron transport material such as an aluminum chelate complex (Alq 3 ) as a light emitting material is laminated thereon. And, on the surface, Al, Li, Ag, Mg, In
And the like are formed by vapor deposition or the like attached in a stripe shape in a direction orthogonal to the pattern of the transparent electrode. In this organic organic EL element, a predetermined current is applied to the intersection of a transparent electrode and a back electrode to emit light. In the production of the organic EL device, the above-mentioned electrode material and EL material are sequentially formed on a glass substrate by vacuum deposition.
【0003】[0003]
【発明が解決しようとする課題】ここで、有機EL素子
は電流が流れる素子であり、導体経路長の差による抵抗
値の差から、発光量が異なってしまうのをできるだけ防
止するために、導体経路の抵抗値をできるだけ抑える必
要があった。従って、そのためにはITO膜の厚さは、
1μm程度必要である。一方。発光層の材料は、厚いと
電流が流れないため、上記TPD、Alq3ともに50
0Å程度の薄い層に形成されている。Here, the organic EL element is an element through which a current flows. In order to prevent the amount of light emission from being different from the difference in resistance due to the difference in the conductor path length, the organic EL element must It was necessary to minimize the resistance of the path. Therefore, for that purpose, the thickness of the ITO film must be
About 1 μm is required. on the other hand. If the material of the light emitting layer is thick, no current flows, so that both TPD and Alq 3 have a thickness of 50%.
It is formed in a thin layer of about 0 °.
【0004】従って、この透明電極と発光層の厚さの差
がきわめて大きいために、EL材料の蒸着等によっては
この段差部分を完全に覆いきれず、透明電極の角部や側
面部に、EL材料の薄い部分や存在しない部分が生じ、
背面電極と透明電極との間に短絡が生じ、発光しない部
分ができる場合があった。[0004] Therefore, since the difference between the thickness of the transparent electrode and the thickness of the light emitting layer is extremely large, the step cannot be completely covered by deposition of the EL material or the like. Some thin or missing parts of the material
In some cases, a short circuit occurred between the back electrode and the transparent electrode, resulting in a portion that did not emit light.
【0005】この発明は、上記従来の技術に鑑みてなさ
れたもので、簡単な構成で、背面電極と透明電極との間
の短絡が生じず、高品位な発光表示が可能な有機EL素
子とその製造方法を提供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above conventional technology, and has an organic EL element capable of performing high-quality light-emitting display with a simple configuration, without causing a short circuit between a back electrode and a transparent electrode. It is an object of the present invention to provide a manufacturing method thereof.
【0006】[0006]
【課題を解決するための手段】この発明は、ガラスや石
英、樹脂等の透明な基板表面にITO等の透明な電極材
料が所定の間隔で形成された透明電極と、この透明電極
間の部分に設けられ上記透明電極の表面とほぼ面一に形
成された絶縁体と、上記透明電極に対向して形成された
背面電極と、上記透明電極と背面電極間に設けられたホ
ール輸送材料及び電子輸送材料その他発光材料による有
機EL材料からなる発光層とからなる有機EL素子であ
る。また、上記透明電極の間の部分には、絶縁体と導電
体とが各々設けられ、この絶縁体と導電体とは上記透明
電極と面一に形成されているものである。また、上記透
明電極は、太幅部と細幅部に形成され、その間が相対的
に細い所定幅の絶縁体により絶縁されているとともに、
この透明電極の細幅部を挟んで上記絶縁体と反対側の透
明電極間の部分に導電体が設けられ、上記絶縁体と導電
体の表面は上記透明電極の表面と面一に形成されている
ものである。SUMMARY OF THE INVENTION The present invention provides a transparent electrode in which a transparent electrode material such as ITO is formed on a transparent substrate surface such as glass, quartz or resin at a predetermined interval, and a portion between the transparent electrodes. An insulator formed substantially flush with the surface of the transparent electrode, a back electrode formed facing the transparent electrode, a hole transport material and an electron provided between the transparent electrode and the back electrode. An organic EL device comprising a transport material and a light emitting layer made of an organic EL material made of a light emitting material. Further, an insulator and a conductor are provided in a portion between the transparent electrodes, respectively, and the insulator and the conductor are formed flush with the transparent electrode. In addition, the transparent electrode is formed in a wide portion and a narrow portion, and the space between them is insulated by an insulator having a relatively narrow predetermined width,
A conductor is provided at a portion between the transparent electrodes opposite to the insulator with the narrow portion of the transparent electrode interposed therebetween, and the surfaces of the insulator and the conductor are formed flush with the surface of the transparent electrode. Is what it is.
【0007】またこの発明は、ガラスや石英、透明樹脂
等の透明基板の表面に蒸着等の真空薄膜形成技術により
ITO等の透明な電極材料を一面に付着させ、その表面
にフォトレジストを塗布し、フォトマスクを用いて所定
の間隔の透明電極のパターンを形成し、上記透明電極の
パターンを残して上記透明な電極材料を除去し、この
後、上記電極材料を除去した部分に絶縁体を蒸着等の真
空薄膜形成技術により付着させ、その表面を上記透明電
極及び上記絶縁体部分がほぼ面一になるように表面を研
磨等により処理し、このほぼ面一の表面にホール輸送材
料及び電子輸送材料その他発光材料による有機EL材料
からなる発光層を真空薄膜形成技術により積層し、さら
に背面電極を真空薄膜形成技術により形成する有機EL
素子の製造方法である。Further, according to the present invention, a transparent electrode material such as ITO is adhered all over the surface of a transparent substrate made of glass, quartz, transparent resin or the like by a vacuum thin film forming technique such as vapor deposition, and a photoresist is applied to the surface. Then, a transparent electrode pattern is formed at a predetermined interval using a photomask, the transparent electrode material is removed while leaving the transparent electrode pattern, and thereafter, an insulator is deposited on a portion where the electrode material is removed. Etc., and the surface thereof is treated by polishing or the like so that the transparent electrode and the insulator portion are substantially flush with each other, and the hole transport material and the electron transport are applied to the substantially flush surface. An organic EL device in which a light emitting layer made of an organic EL material made of a material or other light emitting material is laminated by a vacuum thin film forming technique, and a back electrode is formed by a vacuum thin film forming technique.
This is a method for manufacturing an element.
【0008】またこの発明は、上記と同様の透明基板の
表面に蒸着等の真空薄膜形成技術によりITO等の透明
な電極材料を一面に付着させ、その表面にフォトレジス
トを塗布し、フォトマスクを用いて所定の間隔の透明電
極のパターンを形成し、上記透明電極のパターンを残し
て上記透明な電極材料を除去し、この後、上記電極材料
を除去した部分に、上記透明電極に対して上記透明電極
の長手方向と直角方向成分を有した所定の斜め方向から
絶縁体を蒸着等の真空薄膜形成技術により付着させ、こ
の後、上記絶縁体の付着方向とは略反対方向の成分を有
した斜め方向から導電体を蒸着等の真空薄膜形成技術に
より付着させ、この後これらの表面を上記透明電極及び
上記絶縁体、上記導電体部分がほぼ面一になるように表
面を研磨等により処理し、このほぼ面一の表面にホール
輸送材料及び電子輸送材料その他発光材料による有機E
L材料からなる発光層を真空薄膜形成技術により積層
し、さらに背面電極を真空薄膜形成技術により形成する
有機EL素子の製造方法である。Further, according to the present invention, a transparent electrode material such as ITO is adhered to the entire surface of a transparent substrate similar to the above by a vacuum thin film forming technique such as vapor deposition, a photoresist is applied to the surface, and a photomask is formed. A transparent electrode pattern is formed at a predetermined interval using the transparent electrode material, leaving the transparent electrode pattern, and then removing the electrode material from the transparent electrode. An insulator was deposited by a vacuum thin film forming technique such as vapor deposition from a predetermined oblique direction having a component perpendicular to the longitudinal direction of the transparent electrode, and thereafter, the component had a component substantially opposite to the direction in which the insulator was deposited. A conductor is adhered from an oblique direction by a vacuum thin film forming technique such as vapor deposition, and then the surfaces are polished by polishing or the like so that the transparent electrode, the insulator, and the conductor portion are substantially flush with each other. Management, and this almost hole flush surface transport material and electron transport material other luminescent material with an organic E
This is a method of manufacturing an organic EL device in which a light emitting layer made of L material is laminated by a vacuum thin film forming technique, and a back electrode is formed by a vacuum thin film forming technique.
【0009】またこの発明は、上記と同様の透明基板の
表面に蒸着等の真空薄膜形成技術によりITO等の透明
な電極材料を一面に付着させ、その表面にフォトレジス
トを塗布し、フォトマスクを用いて、上記透明な電極材
料を所定幅の太幅部と細幅部が交互に形成された透明電
極となるように所定パターンを形成し、上記透明電極の
太幅部と細幅部の間の相対的に細い間の部分にはマスキ
ングにより絶縁体を蒸着等の真空薄膜形成技術により付
着させるとともに、この前または後に、上記透明電極の
太幅部と細幅部の間の相対的に広い間の透明電極間にも
マスキングにより導電体を蒸着等の真空薄膜形成技術に
より付着させ、この後これらの表面を上記透明電極及び
上記絶縁体、上記導電体部分がほぼ面一になるように表
面を研磨等により処理し、このほぼ面一の表面にホール
輸送材料及び電子輸送材料その他発光材料による有機E
L材料からなる発光層を真空薄膜形成技術により積層
し、さらに背面電極を真空薄膜形成技術により形成する
有機EL素子の製造方法である。The present invention also provides a method for forming a transparent electrode material such as ITO on one surface of a transparent substrate by a vacuum thin film forming technique such as vapor deposition, and applying a photoresist on the surface to form a photomask. Using the transparent electrode material, a predetermined pattern is formed so as to form a transparent electrode in which a wide portion and a narrow portion having a predetermined width are alternately formed, and the transparent electrode material is formed between the wide portion and the narrow portion of the transparent electrode. An insulator is attached to a relatively narrow portion by masking by a vacuum thin film forming technique such as evaporation by masking, and before or after this, a relatively wide portion between the wide portion and the narrow portion of the transparent electrode is formed. A conductor is attached by masking a vacuum thin film forming technique such as evaporation between the transparent electrodes between the transparent electrodes, and then these surfaces are surfaced so that the transparent electrode, the insulator, and the conductor portion are substantially flush with each other. By polishing Management, and this almost hole flush surface transport material and electron transport material other luminescent material with an organic E
This is a method of manufacturing an organic EL device in which a light emitting layer made of L material is laminated by a vacuum thin film forming technique, and a back electrode is formed by a vacuum thin film forming technique.
【0010】[0010]
【発明の実施の形態】以下、この発明の実施の形態につ
いて図面を基にして説明する。図1(A)〜図1(D)
はこの発明の有機EL素子の第一実施形態を示すもの
で、この実施形態の有機EL素子は、ガラスや石英、樹
脂等の透明な基板10の一方の側にITO等の透明な電
極材料11による透明電極12が形成されている。透明
電極12は、1μm程度の厚さで、所定のピッチでスト
ライプ上に形成され、例えば1.5mmピッチで、1m
m幅の透明電極12に形成されている。透明電極12の
間には、SiO2等の絶縁体14が、1μm程度の厚さ
で0.5mmの幅にストライプ上に形成されている。従
って、透明電極12と絶縁体14の表面は、同一平面上
に位置し面一に形成されている。Embodiments of the present invention will be described below with reference to the drawings. 1 (A) to 1 (D)
1 shows a first embodiment of the organic EL device of the present invention. The organic EL device of this embodiment has a transparent electrode material 11 such as ITO on one side of a transparent substrate 10 made of glass, quartz, resin or the like. Is formed. The transparent electrode 12 has a thickness of about 1 μm and is formed on the stripe at a predetermined pitch.
It is formed on a transparent electrode 12 having a width of m. Between the transparent electrodes 12, an insulator 14 such as SiO 2 is formed on the stripe with a thickness of about 1 μm and a width of 0.5 mm. Therefore, the surfaces of the transparent electrode 12 and the insulator 14 are located on the same plane and are formed flush.
【0011】透明電極12、絶縁体14の表面には、5
00Å程度のホール輸送材料、及び500Å程度の電子
輸送材料その他発光材料による有機EL材料からなる図
示しない発光層が積層される。そして、発光層の電子輸
送材料の表面には、例えばLiを0.01〜0.05%
程度含む純度99%程度のAl−Li合金の背面電極
が、適宜の500Å〜1000Å程度の厚さで、透明電
極12と対面して直交する方向に、所定ピッチのストラ
イプ状に形成されている。On the surfaces of the transparent electrode 12 and the insulator 14, 5
A light emitting layer (not shown) made of an organic EL material using a hole transporting material of about 00 °, an electron transporting material of about 500 ° and other light emitting materials is laminated. Then, for example, 0.01 to 0.05% of Li is applied to the surface of the electron transporting material of the light emitting layer.
A back electrode of an Al-Li alloy having a purity of about 99% is formed in a stripe shape with a predetermined pitch in a direction perpendicular to and facing the transparent electrode 12 with an appropriate thickness of about 500 ° to 1000 °.
【0012】さらに、この背面電極の表面には、適宜9
9.999%以上の純度のAl等によるによる導電パタ
ーンが、ストライプ状に形成されている。この表面に
は、さらに、図示しない保護層が積層されている。保護
層は、Ag、Al等の金属薄膜や、フェノール、エポキ
シ等の樹脂や、導電性塗料により形成され、背面電極及
び発光層を外気から遮断するものである。Further, the surface of this back electrode is appropriately
A conductive pattern made of Al or the like having a purity of 9.999% or more is formed in a stripe shape. On this surface, a protective layer (not shown) is further laminated. The protective layer is formed of a metal thin film such as Ag or Al, a resin such as phenol or epoxy, or a conductive paint, and shields the back electrode and the light emitting layer from the outside air.
【0013】発光層は、母体材料のうちホール輸送材料
としては、トリフェニルアミン誘導体(TPD)、ヒド
ラゾン誘導体、アリールアミン誘導体等がある。また、
電子輸送材料としては、アルミキレート錯体(Al
q3)、ジスチリルビフェニル誘導体(DPVBi)、
オキサジアゾール誘導体、ビスチリルアントラセン誘導
体、ベンゾオキサゾールチオフェン誘導体、ペリレン
類、チアゾール類等を用いる。さらに、適宜の発光材料
を混合しても良く、ホール輸送材料と電子輸送材料を混
合した発光層を形成しても良く、その場合、ホール輸送
材料と電子輸送材料の比は、10:90乃至90:10
の範囲で適宜変更可能である。In the light emitting layer, as a hole transporting material among the base materials, there are a triphenylamine derivative (TPD), a hydrazone derivative, an arylamine derivative and the like. Also,
As electron transport materials, aluminum chelate complexes (Al
q 3 ), distyrylbiphenyl derivatives (DPVBi),
An oxadiazole derivative, a bistyrylanthracene derivative, a benzoxazolethiophene derivative, perylenes, thiazoles, or the like is used. Further, an appropriate light emitting material may be mixed, or a light emitting layer in which a hole transport material and an electron transport material are mixed may be formed. In this case, the ratio of the hole transport material to the electron transport material is from 10:90 to 90:10
Can be changed as appropriate within the range.
【0014】この実施形態のEL素子の製造方法は、図
1(A)に示すように、ガラスや石英、透明樹脂等の透
明基板10の表面に、蒸着やスパッタリング等の真空薄
膜形成技術によりITO等の透明な電極材料11を一面
に付着させる。そして、その表面にフォトレジスト16
を塗布し、フォトマスクを用いて所定の間隔の透明電極
12のパターンを形成し、図1(B)に示すように、透
明電極12のパターンを残して透明な電極材料11を除
去する。この後、図1(C)に示すように、電極材料1
1を除去した部分及び透明電極12が残った部分の全面
に、SiO2等の絶縁体14を蒸着等の真空薄膜形成技
術により付着させる。そして、その表面の透明電極12
及び絶縁体14が面一になるように、表面をケミカルメ
カニカルポリシング(CMP)により研磨処理する。こ
の後、この面一の表面にホール輸送材料及び電子輸送材
料その他発光材料による有機EL材料からなる発光層を
真空薄膜形成技術により全面に積層し、さらに背面電極
を真空薄膜形成技術により形成する。背面電極はマスク
蒸着により、ストライプパターンを形成する。As shown in FIG. 1A, the manufacturing method of the EL element of this embodiment is to form an ITO film on a surface of a transparent substrate 10 made of glass, quartz, transparent resin or the like by a vacuum thin film forming technique such as vapor deposition or sputtering. A transparent electrode material 11 is adhered to one surface. Then, a photoresist 16 is formed on the surface.
Then, a pattern of the transparent electrodes 12 is formed at predetermined intervals using a photomask, and as shown in FIG. 1B, the transparent electrode material 11 is removed while leaving the pattern of the transparent electrodes 12. Thereafter, as shown in FIG.
An insulator 14 such as SiO 2 is adhered to the entire surface of the portion from which 1 is removed and the portion where the transparent electrode 12 remains by a vacuum thin film forming technique such as vapor deposition. Then, the transparent electrode 12 on the surface
The surface is polished by chemical mechanical polishing (CMP) so that the insulator 14 is flush with the surface. Thereafter, a light emitting layer made of an organic EL material made of a hole transporting material, an electron transporting material or another light emitting material is laminated on the entire surface by a vacuum thin film forming technique, and a back electrode is formed by a vacuum thin film forming technique. The back electrode forms a stripe pattern by mask evaporation.
【0015】ここで蒸着条件は、例えば、真空度が6×
10-6Torrで、EL材料の場合50Å/secの蒸
着速度で成膜させる。また、発光層等をフラッシュ蒸着
により形成しても良い。フラッシュ蒸着法は、予め所定
の比率で混合した有機EL材料を、300〜600℃好
ましくは、400〜500℃に加熱した蒸着源に落下さ
せ、有機EL材料を一気に蒸発させるものである。ま
た、その有機EL材料を容器中に収容し、急速にその容
器を加熱し、一気に蒸着させるものでも良い。Here, the deposition conditions are, for example, that the degree of vacuum is 6 ×
At 10 −6 Torr, a film is formed at a deposition rate of 50 ° / sec in the case of an EL material. Further, the light emitting layer and the like may be formed by flash evaporation. In the flash evaporation method, an organic EL material previously mixed at a predetermined ratio is dropped to an evaporation source heated to 300 to 600 ° C., preferably 400 to 500 ° C., and the organic EL material is evaporated at a stroke. Alternatively, the organic EL material may be housed in a container, and the container may be rapidly heated and vapor-deposited at once.
【0016】この実施形態のLE素子によれば、発光層
を形成する面が、透明電極12と絶縁体14のストライ
プ状に形成され且つ面一に形成されているので、透明電
極12と背面電極とが発光層により確実に絶縁され、こ
の間に短絡が生ぜず、確実なドット発光が可能となるも
のである。According to the LE device of this embodiment, the surface on which the light emitting layer is formed is formed in a stripe shape of the transparent electrode 12 and the insulator 14 and is formed flush with the transparent electrode 12 and the back electrode. Are reliably insulated by the light emitting layer, and a short circuit does not occur during this period, thereby enabling reliable dot emission.
【0017】次にこの発明の第二実施形態について、図
2(A)〜図2(D)を基にして説明する。ここで、上
記実施形態と同様の部材は同一の符号を付して説明を省
略する。この実施形態の有機EL素子は、ガラスや石
英、樹脂等の透明な基板10の一方の側にITO等の透
明な電極材料11による透明電極12が形成され、透明
電極12は、1μm程度の厚さに形成され、例えば、
1.5mmピッチで、1mm幅に形成されている。透明
電極12の一方の端縁部に沿って、透明電極12の間の
一部に、ストライプ状にSiO2等の絶縁体18が1μ
m程度の厚さに形成されている。さらに、絶縁体18と
透明電極12の他方の端縁部の間には、Al等の導電体
20が1μm程度の厚さに形成されている。従って、透
明電極12と絶縁体18、導電体20の表面は、同一平
面上に位置し面一に形成されている。Next, a second embodiment of the present invention will be described with reference to FIGS. 2 (A) to 2 (D). Here, the same members as those in the above embodiment are denoted by the same reference numerals, and description thereof will be omitted. In the organic EL device of this embodiment, a transparent electrode 12 made of a transparent electrode material 11 such as ITO is formed on one side of a transparent substrate 10 made of glass, quartz, resin, or the like, and the transparent electrode 12 has a thickness of about 1 μm. Formed, for example,
It is formed with a pitch of 1.5 mm and a width of 1 mm. Along the one edge of the transparent electrode 12, a portion of the transparent electrode 12 between the transparent electrodes 12 has a stripe-shaped insulator 18 such as SiO 2 having a thickness of 1 μm.
The thickness is about m. Further, a conductor 20 such as Al is formed between the insulator 18 and the other end of the transparent electrode 12 to a thickness of about 1 μm. Therefore, the surfaces of the transparent electrode 12, the insulator 18, and the conductor 20 are located on the same plane and are flush with each other.
【0018】この実施形態のEL素子の製造方法は、図
2(A)に示すように、ガラスや石英、透明樹脂等の透
明基板10の表面に、蒸着やスパッタリング等の真空薄
膜形成技術によりITO等の透明な電極材料11を一面
に付着させる。そして、その表面にフォトレジスト16
を塗布し、フォトマスクを用いて所定の間隔の透明電極
12のパターンを形成し、図2(B)に示すように、透
明電極12のパターンを残して透明な電極材料11を除
去する。この後、図2(C)に示すように、先ず、透明
電極12のストライプ方向に対して直角方向成分を有し
た所定の斜め方向から、絶縁体18を蒸着等の真空薄膜
形成技術により付着させる。これにより、フォトレジス
ト16の表面及び透明電極12の一方の端縁部に沿って
ストライプ状にSiO2等の絶縁体18の層が形成され
る。次に、絶縁体18の蒸着方向に対して、基板10の
表面に立てた垂線を挟んで対称な方向である斜め方向か
ら導電体20を蒸着等の真空薄膜形成技術により付着さ
せる。そして、その表面の透明電極12及び絶縁体1
8、導電体20が面一になるように、表面をケミカルメ
カニカルポリシング(CMP)により研磨処理する。こ
の後、上記第一実施形態と同様に有機EL材料からなる
発光層を真空薄膜形成技術により全面に積層し、さらに
背面電極を真空薄膜形成技術により形成する。As shown in FIG. 2A, the manufacturing method of the EL element of this embodiment is to form an ITO film on a surface of a transparent substrate 10 such as glass, quartz, transparent resin or the like by a vacuum thin film forming technique such as vapor deposition or sputtering. A transparent electrode material 11 is adhered to one surface. Then, a photoresist 16 is formed on the surface.
Then, a pattern of the transparent electrodes 12 is formed at predetermined intervals using a photomask, and as shown in FIG. 2B, the transparent electrode material 11 is removed while leaving the pattern of the transparent electrodes 12. Thereafter, as shown in FIG. 2C, first, the insulator 18 is attached by a vacuum thin film forming technique such as vapor deposition from a predetermined oblique direction having a component perpendicular to the stripe direction of the transparent electrode 12. . As a result, a layer of an insulator 18 such as SiO 2 is formed in a stripe shape along the surface of the photoresist 16 and one edge of the transparent electrode 12. Next, the conductor 20 is adhered by a vacuum thin film forming technique such as vapor deposition from an oblique direction that is symmetrical with respect to the vapor deposition direction of the insulator 18 with respect to a vertical line formed on the surface of the substrate 10. Then, the transparent electrode 12 and the insulator 1 on the surface
8. The surface is polished by chemical mechanical polishing (CMP) so that the conductor 20 is flush. Thereafter, as in the first embodiment, a light emitting layer made of an organic EL material is laminated on the entire surface by a vacuum thin film forming technique, and a back electrode is formed by a vacuum thin film forming technique.
【0019】この実施形態のLE素子によれば、発光層
を積層する面が、面一に形成され、さらに、透明電極1
2に沿って導電体20のパターンが形成され、透明電極
12へ至る経路の抵抗を少なくしている。According to the LE device of this embodiment, the surface on which the light emitting layer is laminated is formed flush with the surface of the light emitting layer.
2, a pattern of the conductor 20 is formed, and the resistance of the path to the transparent electrode 12 is reduced.
【0020】次にこの発明の第三実施形態について、図
3(A)〜図3(D)を基にして説明する。ここで、上
記実施形態と同様の部材は同一の符号を付して説明を省
略する。この実施形態の有機EL素子は、ガラスや石
英、樹脂等の透明な基板10の一方の側にITO等の透
明な電極材料11による透明電極12が形成され、透明
電極12は、1μm程度の厚さに形成され、例えば、
1.5mmピッチで、1mm幅に形成されている。透明
電極12は、太幅部22と細幅部24とからなり、各々
平行にストライプ状に形成されている。透明電極12の
太幅部22と細幅部24の間には、ストライプ状にSi
O2等の絶縁体26が1μm程度の厚さに形成されてい
る。さらに、透明電極12同士の間、即ち細幅部24を
挟んで絶縁体26の反対側には、Al等の導電体28が
1μm程度の厚さに形成されている。従って、透明電極
12と絶縁体26、導電体28の表面は、同一平面上に
位置し面一に形成されている。Next, a third embodiment of the present invention will be described with reference to FIGS. 3 (A) to 3 (D). Here, the same members as those in the above embodiment are denoted by the same reference numerals, and description thereof will be omitted. In the organic EL device of this embodiment, a transparent electrode 12 made of a transparent electrode material 11 such as ITO is formed on one side of a transparent substrate 10 made of glass, quartz, resin, or the like, and the transparent electrode 12 has a thickness of about 1 μm. Formed, for example,
It is formed with a pitch of 1.5 mm and a width of 1 mm. The transparent electrode 12 includes a wide portion 22 and a narrow portion 24, each of which is formed in a stripe shape in parallel. Between the wide part 22 and the narrow part 24 of the transparent electrode 12, Si
An insulator 26 such as O 2 is formed to a thickness of about 1 μm. Further, a conductor 28 made of Al or the like is formed with a thickness of about 1 μm between the transparent electrodes 12, that is, on the opposite side of the insulator 26 across the narrow width portion 24. Therefore, the surfaces of the transparent electrode 12, the insulator 26, and the conductor 28 are located on the same plane and are flush with each other.
【0021】この実施形態のEL素子の製造方法は、図
3(A)に示すように、ガラスや石英、透明樹脂等の透
明基板10の表面に、蒸着やスパッタリング等の真空薄
膜形成技術によりITO等の透明な電極材料11を一面
に付着させる。そして、その表面にフォトレジスト16
を塗布し、フォトマスクを用いて所定の間隔の透明電極
12のパターンを形成する。このとき、透明電極12は
太幅部22と細幅部24とに分離して形成されるように
する。そして図3(B)に示すように、透明電極12の
パターンを残して透明な電極材料11を除去する。この
後、図3(B)に示すように、先ず、透明電極12の太
幅部22と細幅部24間の相対的に細いスリット30が
形成されたマスク32により絶縁体26を、蒸着等の真
空薄膜形成技術により形成する。次に、図3(C)に示
すように、透明電極12同士の間の相対的に広い透明電
極12間に、相対的に広いスリット34が形成されたマ
スク36により導電体28を、蒸着等の真空薄膜形成技
術により形成する。なお、絶縁体26と導電体28の形
成順序は逆でも良い。以下、上記実施形態と同様に、研
磨し、発光層を形成し、背面電極を形成する。As shown in FIG. 3A, the manufacturing method of the EL element of this embodiment is to form an ITO film on a surface of a transparent substrate 10 such as glass, quartz or transparent resin by a vacuum thin film forming technique such as vapor deposition or sputtering. A transparent electrode material 11 is adhered to one surface. Then, a photoresist 16 is formed on the surface.
Is applied, and a pattern of the transparent electrodes 12 at predetermined intervals is formed using a photomask. At this time, the transparent electrode 12 is formed so as to be separated into the wide portion 22 and the narrow portion 24. Then, as shown in FIG. 3B, the transparent electrode material 11 is removed while leaving the pattern of the transparent electrode 12. Thereafter, as shown in FIG. 3 (B), first, an insulator 26 is deposited by a mask 32 in which a relatively narrow slit 30 is formed between the large width portion 22 and the small width portion 24 of the transparent electrode 12. Formed by the vacuum thin film forming technique described above. Next, as shown in FIG. 3 (C), the conductor 28 is deposited by a mask 36 having a relatively wide slit 34 formed between the transparent electrodes 12 between the transparent electrodes 12 by vapor deposition or the like. Formed by the vacuum thin film forming technique described above. Note that the order of forming the insulator 26 and the conductor 28 may be reversed. Hereinafter, in the same manner as in the above embodiment, polishing is performed, a light emitting layer is formed, and a back electrode is formed.
【0022】この実施形態のLE素子によれば、発光層
を積層する面が、面一に形成され、さらに、透明電極1
2に沿って導電体20のパターンが形成され、透明電極
12へ至る経路の抵抗を少なくしているとともに、絶縁
体26による絶縁が確実になされ、より信頼性の高い素
子を形成することができる。しかも、マスク蒸着により
絶縁体26、導電体28を形成するので、隣接部分の短
絡も生じない。According to the LE element of this embodiment, the surface on which the light emitting layer is laminated is formed to be flush with the transparent electrode 1.
2, the pattern of the conductor 20 is formed, the resistance of the path leading to the transparent electrode 12 is reduced, the insulation by the insulator 26 is ensured, and a more reliable element can be formed. . In addition, since the insulator 26 and the conductor 28 are formed by mask evaporation, a short circuit between adjacent portions does not occur.
【0023】なお、この発明の有機EL素子の導電体の
形成は、Al以外の金(Au)または他の金属でも良
く、薄膜の形成は蒸着以外のスパッタリングやその他の
真空薄膜形成技術により形成しても良い。The conductor of the organic EL device of the present invention may be formed of gold (Au) or another metal other than Al, and the thin film may be formed by sputtering other than vapor deposition or other vacuum thin film forming techniques. May be.
【0024】[0024]
【発明の効果】この発明の有機EL素子とその製造方法
は、発光層を形成する面が均一な平面に形成され、透明
電極と背面電極との短絡が生ぜず、高品質な素子を形成
することができる。According to the organic EL device and the method of manufacturing the same of the present invention, the surface on which the light emitting layer is formed is formed on a uniform plane, and a short circuit between the transparent electrode and the back electrode does not occur, thereby forming a high quality device. be able to.
【図1】この発明の第一実施形態の有機EL素子の製造
工程を示す断面図である。FIG. 1 is a cross-sectional view illustrating a process of manufacturing an organic EL device according to a first embodiment of the present invention.
【図2】この発明の第二実施形態の有機EL素子の製造
工程を示す断面図である。FIG. 2 is a cross-sectional view illustrating a manufacturing process of an organic EL device according to a second embodiment of the present invention.
【図3】この発明の第三実施形態の有機EL素子の製造
工程を示す断面図である。FIG. 3 is a cross-sectional view illustrating a process of manufacturing an organic EL device according to a third embodiment of the present invention.
10 基板 12 透明電極 14,18,26 絶縁体 20,28 導電体 DESCRIPTION OF SYMBOLS 10 Substrate 12 Transparent electrode 14, 18, 26 Insulator 20, 28 Conductor
フロントページの続き (72)発明者 丹保 哲也 富山県上新川郡大沢野町下大久保3158番地 北陸電気工業株式会社内Continuation of the front page (72) Inventor Tetsuya Tanbo 3158 Shimookubo, Osawanomachi, Kamishinkawa-gun, Toyama Prefecture Hokuriku Electric Industry Co., Ltd.
Claims (6)
の間隔で形成された透明電極と、この透明電極間の部分
に設けられ上記透明電極の表面とほぼ面一に形成された
絶縁体と、上記透明電極に対向して形成された背面電極
と、上記透明電極と背面電極間に設けられた有機EL材
料の発光層とからなる有機EL素子。1. A transparent electrode in which transparent electrode materials are formed on a transparent substrate surface at predetermined intervals, and an insulator provided between the transparent electrodes and formed substantially flush with the surface of the transparent electrode. And a back electrode formed to face the transparent electrode, and a light emitting layer of an organic EL material provided between the transparent electrode and the back electrode.
導電体とが各々設けられ、この絶縁体と導電体とは上記
透明電極と面一に形成されているものである請求項1記
載の有機EL素子。2. An insulator and a conductor are provided in a portion between the transparent electrodes, and the insulator and the conductor are formed flush with the transparent electrode. 2. The organic EL device according to 1.
れ、その間が相対的に細い所定幅の絶縁体により絶縁さ
れているとともに、この透明電極の細幅部を挟んで上記
絶縁体と反対側の透明電極間の部分に導電体が設けら
れ、上記絶縁体と導電体の表面は上記透明電極の表面と
面一に形成されているものである請求項1記載の有機E
L素子。3. The transparent electrode is formed in a large width portion and a narrow width portion, and is insulated by a relatively narrow insulator having a predetermined width. 2. The organic E according to claim 1, wherein a conductor is provided in a portion between the transparent electrodes on the opposite side of the body, and the surfaces of the insulator and the conductor are formed flush with the surface of the transparent electrode.
L element.
技術により透明な電極材料を一面に付着させ、その表面
にフォトレジストを塗布し、フォトマスクを用いて所定
の間隔の透明電極のパターンを形成し、上記透明電極の
パターンを残して上記透明な電極材料を除去し、この
後、上記電極材料を除去した部分に絶縁体を真空薄膜形
成技術により付着させ、その表面を上記透明電極及び上
記絶縁体部分がほぼ面一になるように表面を研磨処理
し、このほぼ面一の表面に有機EL材料からなる発光層
を真空薄膜形成技術により積層し、さらに背面電極を真
空薄膜形成技術により形成する有機EL素子の製造方
法。4. A transparent electrode material is adhered to one surface of the surface of a transparent substrate by a vacuum thin film forming technique such as vapor deposition, a photoresist is applied to the surface, and a transparent electrode pattern is formed at a predetermined interval using a photomask. Is formed, the transparent electrode material is removed while leaving the pattern of the transparent electrode, and thereafter, an insulator is adhered to a portion where the electrode material is removed by a vacuum thin film forming technique, and the surface thereof is covered with the transparent electrode and the transparent electrode. The surface is polished so that the insulator portion is substantially flush, a light emitting layer made of an organic EL material is laminated on the substantially flush surface by a vacuum thin film forming technique, and the back electrode is further formed by a vacuum thin film forming technique. A method for manufacturing an organic EL element to be formed.
り透明な電極材料を一面に付着させ、その表面にフォト
レジストを塗布し、フォトマスクを用いて所定の間隔の
透明電極のパターンを形成し、上記透明電極のパターン
を残して上記透明な電極材料を除去し、この後、上記電
極材料を除去した部分に、上記透明電極に対して上記透
明電極の長手方向と直角方向成分を有した所定の斜め方
向から絶縁体を真空薄膜形成技術により付着させ、この
後、上記絶縁体の付着方向とは略反対方向成分を有した
方向から導電体を蒸着等の真空薄膜形成技術により付着
させ、この後これらの表面を上記透明電極及び上記絶縁
体、上記導電体部分がほぼ面一になるように表面を研磨
処理し、このほぼ面一の表面に有機EL材料からなる発
光層を真空薄膜形成技術により積層し、さらに背面電極
を真空薄膜形成技術により形成する有機EL素子の製造
方法。5. A transparent electrode material is adhered to one surface of a transparent substrate by a vacuum thin film forming technique, a photoresist is applied to the surface, and a transparent electrode pattern is formed at a predetermined interval using a photomask. Removing the transparent electrode material while leaving the pattern of the transparent electrode, and then removing a portion of the electrode material at a portion having a component perpendicular to the longitudinal direction of the transparent electrode with respect to the transparent electrode. An insulator is attached by a vacuum thin film forming technique from an oblique direction, and thereafter, a conductor is attached by a vacuum thin film forming technique such as evaporation from a direction having a component substantially opposite to the attaching direction of the insulator. Thereafter, the surfaces are polished so that the transparent electrode, the insulator, and the conductor portion are substantially flush with each other, and a light emitting layer made of an organic EL material is formed on the substantially flush surface in a vacuum thin film. A method of manufacturing an organic EL element, wherein the organic EL device is laminated by a technique and the back electrode is formed by a vacuum thin film forming technique.
技術により透明な電極材料を一面に付着させ、その表面
にフォトレジストを塗布し、フォトマスクを用いて、上
記透明な電極材料を所定幅の太幅部と細幅部が交互に形
成された透明電極となるように所定パターンを形成し、
上記透明電極の太幅部と細幅部の間の相対的に細い間の
部分にはマスキングにより絶縁体を真空薄膜形成技術に
より付着させるとともに、この前または後に、上記透明
電極の太幅部と細幅部の間の相対的に広い間の部分にも
マスキングにより導電体を真空薄膜形成技術により付着
させ、この後これらの表面を上記透明電極及び上記絶縁
体、上記導電体部分がほぼ面一になるように表面を研磨
処理し、このほぼ面一の表面に有機EL材料からなる発
光層を真空薄膜形成技術により積層し、さらに背面電極
を真空薄膜形成技術により形成する有機EL素子の製造
方法。6. A transparent electrode material is adhered to one surface of the transparent substrate by a vacuum thin film forming technique such as vapor deposition, a photoresist is applied to the surface, and the transparent electrode material is applied to a predetermined surface using a photomask. Form a predetermined pattern so as to become a transparent electrode having a wide width portion and a narrow width portion alternately formed,
At the relatively narrow portion between the wide portion and the narrow portion of the transparent electrode, an insulator is attached by vacuum thin film formation technology by masking, and before or after this, the thick portion of the transparent electrode and A conductor is attached to the relatively wide portion between the narrow portions by masking by a vacuum thin film forming technique, and then these surfaces are substantially flush with the transparent electrode, the insulator, and the conductor portion. A method of manufacturing an organic EL device, in which a surface is polished so that a light emitting layer made of an organic EL material is laminated on the almost flush surface by a vacuum thin film forming technique, and further, a back electrode is formed by a vacuum thin film forming technique .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9033365A JPH10223375A (en) | 1997-01-31 | 1997-01-31 | Organic el element and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9033365A JPH10223375A (en) | 1997-01-31 | 1997-01-31 | Organic el element and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH10223375A true JPH10223375A (en) | 1998-08-21 |
Family
ID=12384565
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9033365A Pending JPH10223375A (en) | 1997-01-31 | 1997-01-31 | Organic el element and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH10223375A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000060907A1 (en) * | 1999-04-02 | 2000-10-12 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence display device and method of producing the same |
KR100437769B1 (en) * | 2001-09-13 | 2004-06-30 | 엘지전자 주식회사 | Fabrication Method for Organic Electroluminescence Decvice |
WO2009049395A1 (en) * | 2007-10-16 | 2009-04-23 | Nanolumens Acquisition, Inc. | Glass-supported electroluminescent nixels and elements with single-sided electrical contacts |
-
1997
- 1997-01-31 JP JP9033365A patent/JPH10223375A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000060907A1 (en) * | 1999-04-02 | 2000-10-12 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence display device and method of producing the same |
US6525467B1 (en) | 1999-04-02 | 2003-02-25 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence display device and method of producing the same |
KR100437769B1 (en) * | 2001-09-13 | 2004-06-30 | 엘지전자 주식회사 | Fabrication Method for Organic Electroluminescence Decvice |
WO2009049395A1 (en) * | 2007-10-16 | 2009-04-23 | Nanolumens Acquisition, Inc. | Glass-supported electroluminescent nixels and elements with single-sided electrical contacts |
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