JPH10209324A - Wiring board - Google Patents
Wiring boardInfo
- Publication number
- JPH10209324A JPH10209324A JP9010364A JP1036497A JPH10209324A JP H10209324 A JPH10209324 A JP H10209324A JP 9010364 A JP9010364 A JP 9010364A JP 1036497 A JP1036497 A JP 1036497A JP H10209324 A JPH10209324 A JP H10209324A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- wiring conductor
- thermosetting resin
- powder
- insulating base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15172—Fan-out arrangement of the internal vias
- H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
- H05K3/4676—Single layer compositions
Landscapes
- Production Of Multi-Layered Print Wiring Board (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、半導体素子を収容
するための半導体素子収納用パッケージや混成集積回路
基板等に用いられる配線基板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board used for a package for housing a semiconductor element for housing a semiconductor element or a hybrid integrated circuit board.
【0002】[0002]
【従来の技術】従来、配線基板、例えば半導体素子を収
容する半導体素子収納用パッケージに使用される配線基
板は、酸化アルミニウム質焼結体等のセラミックスより
成り、その上面に半導体素子を搭載する搭載部を有する
絶縁基体と、前記絶縁基体の上面で搭載部又は搭載部近
傍から絶縁基体下面にかけて導出されたタングステン、
モリブデン等の高融点金属材料から成る配線導体とから
構成されており、前記絶縁基体の搭載部に半導体素子を
搭載するとともに該半導体素子の各電極を絶縁基体の上
面に導出した配線導体に半田バンプやボンディングワイ
ヤー等の電気的接続手段を介して電気的に接続し、しか
る後、前記絶縁基体の上面に、金属やセラミックス等か
ら成る蓋体を半導体素子を覆うようにしてガラス、樹
脂、ロウ材等の封止材を介して接合させ、半導体素子を
気密に収容することによって製品としての半導体装置と
なり、配線導体の絶縁基体下面に導出した部位を外部電
気回路基板の電気配線に接続させることによって半導体
素子の各電極が外部電気回路基板に電気的に接続される
こととなる。2. Description of the Related Art Conventionally, a wiring board, for example, a wiring board used for a semiconductor element housing package for housing a semiconductor element is made of ceramics such as an aluminum oxide sintered body, and a semiconductor element is mounted on an upper surface thereof. An insulating base having a portion, and tungsten led out from the mounting portion or the vicinity of the mounting portion on the upper surface of the insulating base to the lower surface of the insulating base,
And a wiring conductor made of a high melting point metal material such as molybdenum. The semiconductor element is mounted on the mounting portion of the insulating base, and each electrode of the semiconductor element is connected to a wiring conductor led out to the upper surface of the insulating base by a solder bump. And electrical connection means such as a bonding wire or the like, and thereafter, a glass, resin, brazing material is formed on the upper surface of the insulating base by covering a semiconductor element with a cover made of metal, ceramics or the like. A semiconductor device as a product is obtained by joining the semiconductor elements in a hermetically sealed manner through a sealing material such as a sealing material, and by connecting a portion of the wiring conductor led out to the lower surface of the insulating base to the electric wiring of the external electric circuit board. Each electrode of the semiconductor element is electrically connected to the external electric circuit board.
【0003】この従来の配線基板は、一般にセラミック
グリーンシート積層法によって製作されており、具体的
には、酸化アルミニウム、酸化珪素、酸化マグネシウ
ム、酸化カルシウム等のセラミック原料粉末に適当な有
機バインダー、溶剤等を添加混合して泥漿状となすとと
もにこれを従来周知のドクターブレード法を採用しシー
ト状に成形することによって複数のセラミックグリーン
シートを得、次に前記セラミックグリーンシートに適当
な打ち抜き加工を施すとともに配線導体となる金属ペー
ストを所定パターンに印刷塗布し、最後に前記セラミッ
クグリーンシートを所定の順に上下に積層して生セラミ
ック成形体となすとともに該生セラミック成形体を還元
雰囲気中約1600℃の高温で焼成することによって製
作される。[0003] This conventional wiring board is generally manufactured by a ceramic green sheet laminating method. Specifically, an organic binder and a solvent suitable for ceramic raw material powder such as aluminum oxide, silicon oxide, magnesium oxide and calcium oxide are used. Are mixed and formed into a slurry, and this is formed into a sheet by employing a conventionally known doctor blade method to obtain a plurality of ceramic green sheets, and then the ceramic green sheets are subjected to an appropriate punching process. At the same time, a metal paste to be a wiring conductor is printed and applied in a predetermined pattern, and finally, the ceramic green sheets are stacked up and down in a predetermined order to form a green ceramic molded body. It is manufactured by firing at high temperature.
【0004】しかしながら、この従来の配線基板は、絶
縁基体を構成する酸化アルミニウム質焼結体等のセラミ
ックスが硬くて脆い性質を有するため、搬送工程や半導
体装置製作の自動ライン等において配線基板同士が、あ
るいは配線基板と半導体装置製作自動ラインの一部とが
激しく衝突すると絶縁基体に欠けや割れ、クラック等が
発生し、その結果、半導体素子を気密に収容することが
できず、半導体素子を長期間にわたり正常、且つ安定に
作動させることができなくなるという欠点を有してい
た。However, in the conventional wiring board, since ceramics such as an aluminum oxide sintered body constituting the insulating base have a hard and brittle property, the wiring boards are not connected to each other in a transfer process or an automatic line for manufacturing semiconductor devices. If the wiring board and a part of the automatic semiconductor device manufacturing line collide violently, the insulating substrate may be chipped, cracked, cracked, etc., and as a result, the semiconductor element cannot be housed in an airtight manner, and the semiconductor element may not be long. There was a drawback that normal and stable operation could not be achieved over a period of time.
【0005】また、前記配線基板の製造方法によれば、
生セラミック成形体を焼成する際、生セラミック成形体
に不均一な焼成収縮が発生し、得られる配線基板に反り
等の変形や寸法のばらつきが発生し、その結果、半導体
素子の各電極と配線導体とを、あるいは配線導体と外部
電気回路基板の配線導体とを正確、且つ確実に電気的に
接続することが困難であるという欠点も有していた。According to the method of manufacturing a wiring board,
When the green ceramic molded body is fired, uneven firing shrinkage occurs in the green ceramic molded body, resulting in deformation and dimensional variation such as warpage of the obtained wiring board, and as a result, each electrode of the semiconductor element and the wiring There is also a disadvantage that it is difficult to accurately and reliably electrically connect the conductor or the wiring conductor to the wiring conductor of the external electric circuit board.
【0006】そこで、配線基板の絶縁基体を従来のセラ
ミックスに代えて無機絶縁物粉末を熱硬化性樹脂で結合
した材料で形成するとともに配線導体を従来の高融点金
属材料に代えて銅等の金属粉末を熱硬化性樹脂で結合し
た材料で形成した配線基板が提案されている。Therefore, the insulating base of the wiring board is formed of a material obtained by bonding inorganic insulating powder with a thermosetting resin in place of the conventional ceramics, and the wiring conductor is formed of a metal such as copper instead of the conventional high melting point metal material. There has been proposed a wiring board formed of a material in which powder is bonded with a thermosetting resin.
【0007】この無機絶縁物粉末を熱硬化性樹脂で結合
して成る絶縁基体と金属粉末を熱硬化性樹脂で結合して
成る配線導体とから成る配線基板は、熱硬化性樹脂前駆
体と無機絶縁物粉末とを混合して成る半硬化状態の前駆
体シートを準備するとともに該前駆体シートに適当な打
ち抜き加工を施し、次にこれに熱硬化性樹脂前駆体と金
属粉末とを混合して成る金属ペーストを所定パターンに
印刷塗布し、最後に前記金属ペーストが印刷塗布された
前駆体シートを必要に応じて積層するとともにこれを約
100〜300℃の温度で熱硬化させることによって製
作される。A wiring board composed of an insulating base formed by bonding an inorganic insulating powder with a thermosetting resin and a wiring conductor formed by bonding a metal powder with a thermosetting resin is composed of a thermosetting resin precursor and an inorganic hardening resin. Prepare a precursor sheet in a semi-cured state by mixing with an insulating powder, perform appropriate punching on the precursor sheet, and then mix a thermosetting resin precursor and metal powder with this. The metal paste is printed and applied in a predetermined pattern, and finally, the precursor sheet on which the metal paste is printed and applied is laminated as necessary, and is thermally cured at a temperature of about 100 to 300 ° C. .
【0008】[0008]
【発明が解決しようとする課題】しかしながら、この無
機絶縁物粉末を熱硬化性樹脂で結合して成る絶縁基体と
銅等の金属粉末を熱硬化性樹脂で結合して成る配線導体
とから成る配線基板は、配線導体を構成する金属粉末と
熱硬化性樹脂との接合強度が若干弱く、配線基板に半導
体素子の電極を接続する際等において配線導体に大きな
外力が印加されると該外力によって熱硬化性樹脂による
金属粉末同士の結合が外れて配線導体の一部が離脱し、
絶縁基体より剥離して、半導体素子等の電極と配線導体
との電気的接続の信頼性が若干劣るという解決すべき課
題を有していた。However, a wiring composed of an insulating base formed by bonding the inorganic insulating powder with a thermosetting resin and a wiring conductor formed by bonding a metal powder such as copper with a thermosetting resin. The substrate has a slightly weaker bonding strength between the metal powder constituting the wiring conductor and the thermosetting resin, and when a large external force is applied to the wiring conductor when, for example, connecting an electrode of a semiconductor element to the wiring substrate, heat is generated by the external force. The bond between the metal powders by the curable resin is released, and a part of the wiring conductor is detached,
There has been a problem to be solved in that the reliability of electrical connection between an electrode of a semiconductor element or the like and a wiring conductor is slightly deteriorated by peeling off from an insulating base.
【0009】そこで、前記配線基板の配線導体を、金属
粉末を熱硬化性樹脂で結合して成る材料に代えて銅箔等
の金属箔により形成することが考えられる。Therefore, it is conceivable that the wiring conductor of the wiring board is formed of a metal foil such as a copper foil instead of a material obtained by bonding metal powder with a thermosetting resin.
【0010】この場合、配線基板は、熱硬化性樹脂前駆
体と無機絶縁物粉末とを混合して成る半硬化状態の前駆
体シートを準備するとともにこれに銅箔を接着し、次に
前記銅箔をエッチングして所定パターンの配線導体とな
し、しかる後、この前駆体シートを複数枚積層圧着する
とともに100〜300℃の温度で熱硬化させることに
よって製作される。In this case, the wiring board is prepared by preparing a precursor sheet in a semi-cured state comprising a mixture of a thermosetting resin precursor and an inorganic insulating powder, bonding a copper foil thereto, The foil is etched to form a wiring conductor having a predetermined pattern. Thereafter, a plurality of the precursor sheets are laminated and pressure-bonded and thermally cured at a temperature of 100 to 300 ° C.
【0011】しかしながら、配線基板の配線導体を銅箔
等の金属箔で形成した場合、該銅箔等の金属箔から成る
配線導体は、その断面形状が変形し難いこと、またエッ
チングによりパターン形成されるためその側面が切り立
った形状となっていること等から、絶縁基体となる前駆
体シートを積層圧着する際に上下に積層された前駆体シ
ート間で配線導体の側面近傍が十分に密着せず、その結
果、絶縁基体の内部に埋設された配線導体の側面近傍に
空隙が形成され易い。このように配線導体の側面近傍に
空隙が形成されると、該空隙の中に大気中の水分等が浸
入して配線導体間の電気的絶縁性が劣化して配線に漏電
や短絡が発生したり、配線導体が腐食して断線してしま
ったりするという欠点が誘発される。However, when the wiring conductor of the wiring board is formed of a metal foil such as a copper foil, the wiring conductor made of the metal foil such as the copper foil is difficult to be deformed in cross-sectional shape, and is formed in a pattern by etching. Therefore, since the side surfaces have a steep shape, the vicinity of the side surface of the wiring conductor does not sufficiently adhere between the precursor sheets stacked up and down when the precursor sheets serving as the insulating base are stacked and pressed. As a result, a void is easily formed near the side surface of the wiring conductor buried inside the insulating base. When a gap is formed in the vicinity of the side surface of the wiring conductor in this way, moisture or the like in the air enters into the gap, the electrical insulation between the wiring conductors is deteriorated, and a leakage or short circuit occurs in the wiring. Or the wiring conductor is corroded and disconnected.
【0012】本発明は上記諸欠点に鑑み案出されたもの
で、その目的は外力印加によっても欠けや割れ等が発生
し難い配線基板を提供することにある。The present invention has been made in view of the above-mentioned drawbacks, and an object of the present invention is to provide a wiring board which is unlikely to be chipped or cracked even when an external force is applied.
【0013】また本発明の他の目的は反りや寸法のばら
つきが少なく、半導体素子等を配線導体に容易に正確、
かつ確実に電気的に接続させることが可能な配線基板を
提供することにある。Another object of the present invention is to reduce warpage and dimensional variation, and to easily and accurately apply a semiconductor element or the like to a wiring conductor.
Another object of the present invention is to provide a wiring board capable of reliably and electrically connecting.
【0014】更に本発明の他の目的は絶縁基体の内部に
埋設された配線導体の側面近傍に空隙が形成されるのを
有効に防止するとともに表面に配線導体を強固に接合さ
せ、これによって半導体素子等を配線導体に確実に電気
的に接続させることができる配線基板を提供することに
ある。Still another object of the present invention is to effectively prevent a void from being formed near the side surface of a wiring conductor buried in an insulating substrate and to firmly join the wiring conductor to the surface, thereby forming a semiconductor. It is an object of the present invention to provide a wiring board capable of reliably electrically connecting elements and the like to wiring conductors.
【0015】[0015]
【課題を解決するための手段】本発明の配線基板は、6
0乃至95重量%の無機絶縁物粉末と5乃至40重量%
の熱硬化性樹脂とから成り、前記無機絶縁物粉末を前記
熱硬化性樹脂により結合して成る絶縁基体の表面に金属
箔から成る配線導体が被着されているとともに該絶縁基
体の内部に金属粉末を熱硬化樹脂により結合した配線導
体が埋設されていることを特徴とするものである。According to the present invention, there is provided a wiring board comprising:
0 to 95% by weight of inorganic insulating powder and 5 to 40% by weight
A wiring conductor made of a metal foil is adhered to a surface of an insulating base formed by bonding the inorganic insulating powder with the thermosetting resin, and a metal is provided inside the insulating base. A wiring conductor in which the powder is bonded by a thermosetting resin is embedded.
【0016】本発明の配線基板によれば、絶縁基体が無
機絶縁物粉末を靭性に優れる熱硬化性樹脂で結合するこ
とによって形成されていることから配線基板同士あるい
は配線基板と半導体装置製作ラインの一部とが激しく衝
突したとしても絶縁基体に欠けや割れ、クラック等を発
生することはない。According to the wiring board of the present invention, since the insulating base is formed by bonding the inorganic insulating powder with the thermosetting resin having excellent toughness, the wiring boards are connected to each other or the wiring board and the semiconductor device manufacturing line. Even if it violently collides with a part, the insulating substrate will not be chipped, cracked, cracked or the like.
【0017】また本発明の配線基板によれば、絶縁基体
表面に被着された配線導体は、金属箔から成ることか
ら、配線導体に半導体素子の電極を接続する際等におい
て配線導体に大きな外力が印加されても配線導体の一部
が離脱し、絶縁基体より剥離することはなく、半導体素
子等の電極を配線導体に確実、強固に電気的接続するこ
とが可能となる。According to the wiring board of the present invention, since the wiring conductor adhered to the surface of the insulating base is made of metal foil, a large external force is applied to the wiring conductor when connecting the electrode of the semiconductor element to the wiring conductor. Is applied, a part of the wiring conductor is detached and does not peel off from the insulating base, so that an electrode of a semiconductor element or the like can be securely and firmly electrically connected to the wiring conductor.
【0018】更に本発明の配線基板によれば、絶縁基体
の内部に埋設された配線導体は金属粉末を熱硬化性樹脂
により結合して成り、熱硬化性樹脂前駆体と金属粉末と
を混合して成る金属ペーストを印刷塗布することにより
形成されることから、金属ペーストの流動性に起因して
その側面がなだらかに傾斜していること及び金属ペース
トの有する可塑性のために絶縁基体となる前駆体シート
を積層圧着する際にその断面形状が潰れて偏平となり、
その結果、上下に積層された前駆体シート間で配線導体
の側面近傍が十分に密着し、絶縁基体内部に埋設された
配線導体の側面近傍に空隙が形成されることはない。Further, according to the wiring board of the present invention, the wiring conductor embedded in the insulating base is formed by bonding a metal powder with a thermosetting resin, and mixing the thermosetting resin precursor with the metal powder. Is formed by printing and applying a metal paste consisting of: a precursor which becomes an insulating substrate due to its side surface being gently inclined due to the fluidity of the metal paste and the plasticity of the metal paste When laminating and crimping the sheet, its cross-sectional shape collapses and becomes flat,
As a result, the vicinity of the side surface of the wiring conductor is sufficiently adhered between the vertically stacked precursor sheets, and no void is formed near the side surface of the wiring conductor buried inside the insulating base.
【0019】[0019]
【発明の実施の形態】次に、本発明を添付の図面に基づ
き、詳細に説明する。図1は、本発明の配線基板を半導
体素子を収容する半導体素子収納用パッケージに適用し
た場合の一実施例を示し、1は絶縁基体、2及び3は配
線導体である。Next, the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 shows an embodiment in which the wiring board of the present invention is applied to a semiconductor element housing package for housing a semiconductor element, wherein 1 is an insulating base, and 2 and 3 are wiring conductors.
【0020】前記絶縁基体1は、三枚の絶縁基板1a、
1b、1cを積層することによって形成されており、そ
の上面に半導体素子4が搭載される。The insulating substrate 1 comprises three insulating substrates 1a,
The semiconductor element 4 is formed by laminating 1b and 1c, and the semiconductor element 4 is mounted on the upper surface thereof.
【0021】前記絶縁基体1を構成する絶縁基板1a、
1b、1cは、例えば酸化珪素、酸化アルミニウム、窒
化アルミニウム、炭化珪素、チタン酸バリウム、チタン
酸ストロンチウム、チタン酸カルシウム、酸化チタン、
ゼオライト等の無機絶縁物粉末をエポキシ樹脂、ポリイ
ミド樹脂、フェノール樹脂、熱硬化性ポリフニレンエー
テル樹脂、ポリイミドアミド樹脂、ビスマレイミドトリ
アジン樹脂等の熱硬化性樹脂により結合することによっ
て形成されており、絶縁基体1を構成する三枚の絶縁基
板1a、1b、1cはその各々が無機絶縁物粉末を靭性
に優れるエポキシ樹脂等の熱硬化性樹脂で結合すること
によって形成されていることから絶縁基体1に外力が印
加されても該外力によって絶縁基体1に欠けや割れ、ク
ラック等が発生することはない。The insulating substrate 1a constituting the insulating base 1
1b and 1c are, for example, silicon oxide, aluminum oxide, aluminum nitride, silicon carbide, barium titanate, strontium titanate, calcium titanate, titanium oxide,
It is formed by bonding an inorganic insulating powder such as zeolite with a thermosetting resin such as an epoxy resin, a polyimide resin, a phenol resin, a thermosetting polyphenylene ether resin, a polyimide amide resin, and a bismaleimide triazine resin. The three insulating substrates 1a, 1b, and 1c constituting the base 1 are formed by bonding inorganic insulating powder with a thermosetting resin such as an epoxy resin having excellent toughness. Even when an external force is applied, the external force does not cause chipping, cracking, cracking, or the like in the insulating base 1.
【0022】前記無機絶縁物粉末を熱硬化性樹脂で結合
して成る三枚の絶縁基板1a、1b、1cは、無機絶縁
物粉末の量が60重量%未満、熱硬化性樹脂の量が40
重量%を越えると各絶縁基板1a、1b、1cの熱膨張
係数が半導体素子4の熱膨張係数に対して大きく相違
し、半導体素子4が作動時に熱を発し、該熱が半導体素
子4と絶縁基板1a、1b、1cからなる絶縁基体1に
印加されると、両者間に両者の熱膨張係数の相違に起因
する大きな熱応力が発生し、この大きな熱応力によって
半導体素子4が絶縁基体1から剥離したり、半導体素子
4に割れや欠けが発生してしまう。また無機絶縁物粉末
の量が95重量%を越え、熱硬化性樹脂の量が5重量%
未満の場合、無機絶縁物粉末を熱硬化性樹脂で強固に結
合することができなくなる。従って、前記絶縁基体1を
構成する絶縁基板1a、1b、1cの各々は無機絶縁物
粉末の量が60乃至95重量%、熱硬化性樹脂の量が5
乃至40重量%の範囲に特定される。The three insulating substrates 1a, 1b and 1c formed by bonding the inorganic insulating powder with a thermosetting resin have an inorganic insulating powder content of less than 60% by weight and a thermosetting resin content of 40% by weight.
If the weight percent is exceeded, the thermal expansion coefficients of the insulating substrates 1a, 1b, and 1c greatly differ from the thermal expansion coefficient of the semiconductor element 4, and the semiconductor element 4 generates heat during operation, and the heat is insulated from the semiconductor element 4. When applied to the insulating substrate 1 composed of the substrates 1a, 1b, and 1c, a large thermal stress is generated between the two due to the difference in thermal expansion coefficient between the two, and the semiconductor element 4 is separated from the insulating substrate 1 by the large thermal stress. Peeling or cracking or chipping of the semiconductor element 4 occurs. The amount of the inorganic insulating powder exceeds 95% by weight, and the amount of the thermosetting resin is 5% by weight.
If it is less than 3, the inorganic insulating powder cannot be firmly bonded with the thermosetting resin. Accordingly, each of the insulating substrates 1a, 1b, and 1c constituting the insulating base 1 has an inorganic insulating powder content of 60 to 95% by weight and a thermosetting resin content of 5 to 5% by weight.
-40% by weight.
【0023】前記絶縁基体1は、例えば粒径が0.1〜
100μm程度の酸化珪素粉末にビスフェノールA型エ
ポキシ樹脂、ビスフェノールF型エポキシ樹脂、ノボラ
ック型エポキシ樹脂、グリシジルエステル型エポキシ樹
脂等の熱硬化性樹脂、及びアミン系硬化剤、イミダゾー
ル系硬化剤、酸無水物系硬化剤等の硬化剤を添加混合し
て得た絶縁ペーストをドクターブレード法等のシート成
形法を採用してシート状となすとともにこれを約25〜
100℃の温度で半硬化させることによって絶縁基板1
a 、1b 、1c と成る前駆体シートを得、しかる後、前
記前駆体シートに適当な打ち抜き加工を施すとともにこ
れらを所定の順に積層圧着し、最後に前記積層圧着され
た前駆体シートを約80〜150℃の温度で熱硬化させ
ることによって製作される。The insulating substrate 1 has, for example, a particle size of 0.1 to
Thermosetting resin such as bisphenol A type epoxy resin, bisphenol F type epoxy resin, novolak type epoxy resin, glycidyl ester type epoxy resin, etc., and amine based curing agent, imidazole based curing agent, acid anhydride The insulating paste obtained by adding and mixing a curing agent such as a system curing agent is formed into a sheet by adopting a sheet forming method such as a doctor blade method, and is formed into about 25 to
The insulating substrate 1 is semi-cured at a temperature of 100 ° C.
a, 1b, and 1c are obtained. Thereafter, the precursor sheet is subjected to an appropriate punching process, and these are laminated and pressed in a predetermined order. Manufactured by thermosetting at a temperature of ~ 150 ° C.
【0024】更に前記絶縁基体1は、その上面及び下面
に例えば銅箔等の金属箔から成る配線導体2が被着され
ているとともにその内部に銅等の金属粉末を熱硬化性樹
脂で結合して成る配線導体3が埋設されている。Further, the insulating substrate 1 has a wiring conductor 2 made of a metal foil such as a copper foil adhered to the upper and lower surfaces thereof, and a metal powder such as copper is bonded to the inside thereof with a thermosetting resin. The wiring conductor 3 is embedded.
【0025】前記絶縁基体1の上面に被着された金属箔
から成る配線導体2は、半導体素子4の各電極を絶縁基
体1の内部に設けた配線導体3に電気的に接続するため
の接続パッドとして作用し、該絶縁基体1の上面に被着
された配線導体2には半導体素子4の各電極が半田バン
プ5を介して接続される。The wiring conductor 2 made of a metal foil adhered on the upper surface of the insulating base 1 is used to electrically connect each electrode of the semiconductor element 4 to the wiring conductor 3 provided inside the insulating base 1. Each electrode of the semiconductor element 4 is connected via a solder bump 5 to a wiring conductor 2 acting as a pad and attached to the upper surface of the insulating base 1.
【0026】また前記絶縁基体1の下面に被着された金
属箔から成る配線導体2は、絶縁基体1の内部に設けた
配線導体3を外部電気回路基板に電気的に接続するため
の接続パッドとして作用し、該絶縁基体1の下面に被着
された配線導体2は外部電気回路基板の電気配線に半田
を介して接続される。The wiring conductor 2 made of metal foil and adhered to the lower surface of the insulating base 1 has connection pads for electrically connecting the wiring conductor 3 provided inside the insulating base 1 to an external electric circuit board. The wiring conductor 2 attached to the lower surface of the insulating base 1 is connected to the electric wiring of the external electric circuit board via solder.
【0027】前記絶縁基体1の上面及び下面に被着され
た配線導体2は、銅箔等の金属箔から成り、該配線導体
2を形成する金属箔はこれを構成する金属原子同士が金
属結合により互いに極めて強固に結合していることか
ら、配線導体2に半導体素子4の電極を接続する際や配
線導体2を外部電気回路基板の電気配線に接続する際等
において配線導体2に大きな外力が印加されても配線導
体2の一部が離脱し、絶縁基体1から剥離することはな
く、これによって半導体素子4の電極や外部電気回路基
板の電気配線を配線導体2に確実、且つ強固に接続する
ことができる。The wiring conductor 2 attached to the upper and lower surfaces of the insulating base 1 is made of a metal foil such as a copper foil. The metal foil forming the wiring conductor 2 is formed by bonding metal atoms of the metal foil to each other. Are very strongly coupled to each other, so that a large external force is applied to the wiring conductor 2 when the electrode of the semiconductor element 4 is connected to the wiring conductor 2 or when the wiring conductor 2 is connected to the electric wiring of the external electric circuit board. Even when the voltage is applied, a part of the wiring conductor 2 is detached and does not peel off from the insulating base 1, whereby the electrodes of the semiconductor element 4 and the electric wiring of the external electric circuit board are securely and firmly connected to the wiring conductor 2. can do.
【0028】前記絶縁基体1の上面及び下面に被着させ
た銅箔等の金属箔から成る配線導体2は、例えばポリエ
チレンテレフタレート(PET)から成る転写シート上
に銅箔等の金属箔を貼着させるとともに該金属箔を従来
周知のフォトリソグラフィー技術を採用して所定のパタ
ーンにエッチングし、しかる後、前記転写シート上の金
属箔を絶縁基板1a となる前駆体シートの上面及び絶縁
基板1c となる前駆体シートの下面に押圧密着させると
ともにこれらから転写シートを除去し、前記金属箔を絶
縁基板1a となる前駆体シートの上面及び絶縁基板1c
となる前駆体シートの下面に転写しておくことによって
絶縁基体1の上面及び下面に被着される。The wiring conductor 2 made of a metal foil such as a copper foil adhered to the upper and lower surfaces of the insulating base 1 is attached with a metal foil such as a copper foil on a transfer sheet made of, for example, polyethylene terephthalate (PET). At the same time, the metal foil is etched into a predetermined pattern by employing a conventionally well-known photolithography technique. Thereafter, the metal foil on the transfer sheet becomes the upper surface of the precursor sheet serving as the insulating substrate 1a and the insulating substrate 1c. The transfer sheet is removed therefrom while being pressed against and adhered to the lower surface of the precursor sheet, and the metal foil is placed on the upper surface of the precursor sheet to be the insulating substrate 1a and the insulating substrate 1c.
Is transferred onto the lower surface of the precursor sheet to be attached to the upper and lower surfaces of the insulating substrate 1.
【0029】また、前記絶縁基体1の内部に埋設された
配線導体3は、絶縁基体1の上下面に被着された配線導
体2を互いに電気的に接続する作用を為し、銅、銀、表
面が銀で被覆された銅、銀−銅合金、金等の金属粉末を
エポキシ樹脂等の熱硬化樹脂により結合して成り、例え
ば粒径が0.1〜20μm 程度の銅粉末にビスフェノー
ルA型エポキシ樹脂、ビスフェノールF型エポキシ樹
脂、ノボラック型エポキシ樹脂、グリシジルエステル型
エポキシ樹脂等のエポキシ樹脂及びアミン系硬化剤、イ
ミダゾール系硬化剤、酸無水物系硬化剤等の硬化剤を添
加混合して得た金属ペーストを絶縁基板1a 、1b 、1
c となる前駆体シートに予め従来周知のスクリーン印刷
法を採用し所定パターンに印刷塗布しておくことによっ
て絶縁基体1の内部に埋設される。この場合、絶縁基体
1の内部に埋設された配線導体3は熱硬化性樹脂前駆体
と金属粉末とから成る金属ペーストを絶縁基板1a 、1
b 、1c となる前駆体シートに所定パターンに印刷塗布
することによって形成されており、印刷塗布された金属
ペーストはその流動性に起因して側面がなだらかに傾斜
したものとなっているとともにその可塑性によって絶縁
基板1a 、1b 、1cとなる前駆体シートを積層圧着し
た際、積層圧着の圧力によって断面形状が偏平となり、
その結果、上下に積層された前駆体シートは配線導体3
の側面近傍を含む全ての面が完全に密着し、配線導体3
の側面近傍に空隙が形成されることはない。The wiring conductor 3 buried inside the insulating base 1 serves to electrically connect the wiring conductors 2 attached to the upper and lower surfaces of the insulating base 1 to each other. A metal powder such as copper, silver-copper alloy, or gold, the surface of which is coated with silver, is bonded with a thermosetting resin such as an epoxy resin. Epoxy resin, bisphenol F type epoxy resin, novolak type epoxy resin, epoxy resin such as glycidyl ester type epoxy resin, and curing agent such as amine type curing agent, imidazole type curing agent, acid anhydride type curing agent etc. are added and mixed. The metal paste is applied to the insulating substrates 1a, 1b, 1
The precursor sheet to be c is buried inside the insulating substrate 1 by previously applying a conventionally known screen printing method and printing and applying it in a predetermined pattern. In this case, the wiring conductor 3 buried inside the insulating base 1 is made of a metal paste composed of a thermosetting resin precursor and a metal powder by using the insulating substrate 1a, 1
b, is formed by printing and applying a predetermined pattern on the precursor sheet to be 1c, and the printed and applied metal paste has a gently sloped side surface due to its fluidity and its plasticity. When the precursor sheets to become the insulating substrates 1a, 1b, and 1c are laminated and pressed by the pressure, the cross-sectional shape becomes flat due to the pressure of the laminated pressure,
As a result, the precursor sheets stacked one above the other are the wiring conductors 3
All the surfaces including the vicinity of the side surface are completely adhered, and the wiring conductor 3
No void is formed in the vicinity of the side surface.
【0030】なお前記配線導体3に含有される金属粉末
は、配線導体3に導電性を付与する作用を為し、その含
有量が70重量%未満では配線導体3の電気抵抗が高い
ものとなり、また95重量%を越えると金属粉末を熱硬
化性樹脂で強固に結合して所定の配線導体3を形成する
ことが困難となる傾向にある。従って、前記配線導体3
は、その内部に含有される金属粉末の量を70乃至95
重量%の範囲としておくことが好ましい。The metal powder contained in the wiring conductor 3 acts to impart conductivity to the wiring conductor 3, and if the content is less than 70% by weight, the electric resistance of the wiring conductor 3 becomes high. If the content exceeds 95% by weight, it tends to be difficult to form a predetermined wiring conductor 3 by firmly bonding the metal powder with a thermosetting resin. Therefore, the wiring conductor 3
Means that the amount of metal powder contained therein is 70-95.
It is preferable to set it in the range of weight%.
【0031】かくして本発明の配線基板によれば、絶縁
基体1の上面に半導体素子4を搭載するとともに半導体
素子4の各電極を半田バンプ5を介して配線導体2に電
気的に接続し、最後に前記絶縁基体1の上面に図示しな
い椀状の蓋体を樹脂等から成る封止材を介して接合さ
せ、絶縁基体1と蓋体とから成る容器内部に半導体素子
4を気密に収容することによって半導体装置となる。Thus, according to the wiring board of the present invention, the semiconductor element 4 is mounted on the upper surface of the insulating base 1 and each electrode of the semiconductor element 4 is electrically connected to the wiring conductor 2 via the solder bump 5. A bowl-shaped lid (not shown) is joined to the upper surface of the insulating base 1 via a sealing material made of resin or the like, and the semiconductor element 4 is hermetically accommodated inside a container formed of the insulating base 1 and the lid. Thus, a semiconductor device is obtained.
【0032】なお本発明は、上述の実施の形態に限定さ
れるものではなく、本発明の要旨を逸脱しない範囲であ
れば、種々の変更は可能であり、例えば上述の実施例で
は、本発明の配線基板を半導体素子を収容する半導体素
子収納用パッケージに適用した場合を例に採って説明し
たが、例えば混成集積回路基板等他の用途に使用される
配線基板に適用してもよい。The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the gist of the present invention. Although the description has been given by taking as an example the case where the wiring board of the present invention is applied to a package for housing a semiconductor element for housing a semiconductor element, the present invention may be applied to a wiring board used for other purposes such as a hybrid integrated circuit board.
【0033】また上述の実施例では、三枚の前駆体シー
トを積層することによって絶縁基体1を製作したが、一
枚や二枚、あるいは四枚以上の前駆体シートを使用して
絶縁基体1を製作してもよい。In the above-described embodiment, the insulating substrate 1 is manufactured by laminating three precursor sheets. However, one, two, or four or more precursor sheets are used to form the insulating substrate 1. May be manufactured.
【0034】更に上述の実施例では、絶縁基体1を無機
絶縁物粉末と熱硬化性樹脂とで形成したが、更に内部に
ガラス繊維やカーボン繊維、アラミド繊維、アルミナ繊
維、チタン酸カリウムウィスカー、ホウ酸アルミニウム
ウィスカー等の短繊維を混入させてもよい。Further, in the above-described embodiment, the insulating base 1 is formed of the inorganic insulating powder and the thermosetting resin. However, glass fiber, carbon fiber, aramid fiber, alumina fiber, potassium titanate whisker, and Short fibers such as aluminum acid whiskers may be mixed.
【0035】また更に上述の実施例では、配線導体3は
金属粉末を熱硬化性樹脂により結合させることによって
形成していたが、配線導体3に更に低融点金属を配合さ
せ、該低融点金属に金属粉末同士の結合を助長させても
よい。この場合、配線導体3となる金属ペースト中に低
融点金属として例えば錫−鉛半田等から成る低融点金属
粉末を配合させておけばよい。Further, in the above-described embodiment, the wiring conductor 3 is formed by bonding metal powder with a thermosetting resin. The bonding between the metal powders may be promoted. In this case, a low-melting-point metal powder made of, for example, tin-lead solder or the like may be blended as the low-melting-point metal in the metal paste to be the wiring conductor 3.
【0036】[0036]
【発明の効果】本発明の配線基板によれば、絶縁基体が
無機絶縁物粉末を靱性に優れる熱硬化性樹脂で結合する
ことにより形成されていることから、配線基板同士ある
いは配線基板と半導体装置の一部とが激しく衝突しても
絶縁基体に欠けや割れ、クラック等が発生することはな
い。According to the wiring board of the present invention, since the insulating base is formed by bonding the inorganic insulating powder with the thermosetting resin having excellent toughness, the wiring boards or the wiring board and the semiconductor device are formed. Even if a portion of the insulating base material collides violently, the insulating substrate will not be chipped, cracked or cracked.
【0037】また本発明の配線基板によれば、前記絶縁
基体の表面に被着された配線導体は、銅箔等の金属箔か
ら成り、該絶縁基体表面に被着された配線導体を形成す
る金属箔はこれを構成する金属原子同士が金属結合によ
り互いに極めて強固に結合していることから、絶縁基体
表面に被着された配線導体を半導体素子の電極や外部電
気回路基板の電気配線に接続する際等において絶縁基体
表面に被着された配線導体に大きな外力が印加されても
絶縁基体表面に被着された配線導体の一部が離脱し、絶
縁基体から剥離することはなく、これによって半導体素
子等の電極や外部電気回路基板の配線導体を絶縁基体表
面に被着された配線導体に確実、且つ強固に接続するこ
とができる。Further, according to the wiring board of the present invention, the wiring conductor attached to the surface of the insulating base is made of a metal foil such as a copper foil, and forms the wiring conductor attached to the surface of the insulating base. Since the metal atoms that make up the metal foil are extremely strongly bonded to each other by metal bonding, the wiring conductor attached to the surface of the insulating base is connected to the electrodes of the semiconductor element and the electric wiring of the external electric circuit board. Even when a large external force is applied to the wiring conductor attached to the insulating base surface when performing, for example, a part of the wiring conductor attached to the insulating base surface separates and does not peel off from the insulating base. Electrodes such as semiconductor elements and wiring conductors of an external electric circuit board can be reliably and firmly connected to wiring conductors attached to the surface of the insulating base.
【0038】更に本発明の配線基板によれば、絶縁基体
の内部に埋設された配線導体は金属粉末を熱硬化性樹脂
により結合して成り、熱硬化性樹脂前駆体と金属粉末と
を混合して成る金属ペーストを印刷塗布することにより
形成されることから、金属ペーストの流動性に起因して
その側面がなだらかに傾斜していること及び金属ペース
トの有する可塑性のために絶縁基体となる前駆体シート
を積層圧着する際にその断面形状が潰れて偏平となり、
その結果、上下に積層された前駆体シート間で配線導体
の側面近傍も十分に密着し、絶縁基体内部に埋設された
配線導体の側面近傍に空隙が形成されることはない。Further, according to the wiring board of the present invention, the wiring conductor embedded in the insulating base is formed by bonding a metal powder with a thermosetting resin, and mixing the thermosetting resin precursor with the metal powder. Is formed by printing and applying a metal paste consisting of: a precursor which becomes an insulating substrate due to its side surface being gently inclined due to the fluidity of the metal paste and the plasticity of the metal paste When laminating and crimping the sheet, its cross-sectional shape collapses and becomes flat,
As a result, the vicinity of the side surface of the wiring conductor is also sufficiently adhered between the precursor sheets stacked vertically, and no void is formed near the side surface of the wiring conductor embedded inside the insulating base.
【図1】本発明の配線基板を半導体素子収納用パッケー
ジに適用した場合の一実施例を示す断面図である。FIG. 1 is a sectional view showing an embodiment in which a wiring board of the present invention is applied to a package for housing a semiconductor element.
1・・・・・・・・・・絶縁基体 1a、1b、1c・・・絶縁基板 2・・・・・・・・・・絶縁基体1の表面に被着された
配線導体 3・・・・・・・・・・絶縁基体1の内部に埋設された
配線導体 4・・・・・・・・・・半導体素子1 ... Insulating substrate 1a, 1b, 1c ... Insulating substrate 2 ... ... Wiring conductor adhered on the surface of insulating substrate 1 ························· Semiconductor element
Claims (1)
乃至40重量%の熱硬化性樹脂とから成り、前記無機絶
縁物粉末を前記熱硬化性樹脂により結合して成る絶縁基
体の表面に金属箔から成る配線導体が被着されていると
ともに該絶縁基体の内部に金属粉末を熱硬化樹脂により
結合した配線導体が埋設されていることを特徴とする配
線基板。An inorganic insulating powder of 60 to 95% by weight and 5
A wiring conductor made of a metal foil is adhered to a surface of an insulating base formed by bonding the inorganic insulating powder with the thermosetting resin, and the insulating base. A wiring substrate, wherein a wiring conductor formed by bonding a metal powder with a thermosetting resin is embedded inside the wiring board.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9010364A JPH10209324A (en) | 1997-01-23 | 1997-01-23 | Wiring board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9010364A JPH10209324A (en) | 1997-01-23 | 1997-01-23 | Wiring board |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH10209324A true JPH10209324A (en) | 1998-08-07 |
Family
ID=11748118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9010364A Pending JPH10209324A (en) | 1997-01-23 | 1997-01-23 | Wiring board |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH10209324A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100516143B1 (en) * | 2002-09-17 | 2005-09-22 | 니혼도꾸슈도교 가부시키가이샤 | Multilayer wiring substrate and method of producing the same |
JP2019079987A (en) * | 2017-10-26 | 2019-05-23 | 京セラ株式会社 | Electronic element mounting substrate, electronic device, and electronic module |
-
1997
- 1997-01-23 JP JP9010364A patent/JPH10209324A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100516143B1 (en) * | 2002-09-17 | 2005-09-22 | 니혼도꾸슈도교 가부시키가이샤 | Multilayer wiring substrate and method of producing the same |
JP2019079987A (en) * | 2017-10-26 | 2019-05-23 | 京セラ株式会社 | Electronic element mounting substrate, electronic device, and electronic module |
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