JPH10209266A - Semiconductor integrated circuit device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-performance silicon oxide film which is not affected by its substrate, by forming the silicon oxide film by using a mixed gas of TEOS gas, ozone gas, and TMP gas or TMB gas, and mixing a very small amount of n- or p-type impurity in the silicon oxide film. SOLUTION: A silicon oxide film 7 is formed as an insulating film from a mixed gas of TEOS gas, ozone gas, and TMP gas on a semiconductor substrate 1 by using a CVD device. Since a very small amount of n-type impurity is contained in the formed silicon oxide film 7 due to the TMP gas mixed in the TEOS gas and ozone gas, the film 7 can be prevented from being affected by a silicon oxide film 6 which is formed by thermal oxidation as the substrate of the film 7 and from becoming a rough granular silicon oxide film containing many voids. Therefore, the silicon oxide film 7 having an excellent quality can be formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to relates to a semiconductor integrated circuit device and a manufacturing method thereof, in particular, TEOS (tetraethoxysilane) gas and ozone (O ₃₎ a silicon oxide film formed by a mixed gas containing a gas And a method of manufacturing the same.

[0002]

2. Description of the Related Art The present inventors have studied a manufacturing technique for forming a silicon oxide film by a reaction between a TEOS gas and an ozone gas used in a method of manufacturing a semiconductor integrated circuit device. The following is a technique studied by the present inventors, and the outline is as follows.

That is, LSI (Large Scale Integrat)
Semiconductor integrated circuit devices such as ed circuits) are being driven to have higher integration, higher speed and higher performance, and accordingly, a narrower element isolation region is required.
In addition to a field insulating film having an S (Local Oxidation of Silicon) structure, a method of manufacturing an element isolating insulating film (field insulating film) by embedding an insulating film in a trench has been studied.

In this case, it is effective to use an organic material having flow (moving) characteristics as an embedding material, and the TEOS gas and the ozone gas are diffused in the reaction chamber by using a CVD (Chemical Vapor Deposition) apparatus. The gas is supplied to the inside of the plate, the gases are mixed inside the diffusion plate, and the mixed gas is used to form a silicon oxide film as an insulating film on the surface of the semiconductor substrate.

[0005] Incidentally, as a document describing a technique of forming an insulating film in a semiconductor integrated circuit device, for example, “1990 Newest Semiconductor Process Technology” published by Press Journal on November 2, 1989, pages 291 to 291. p295
Some are described in

[0006]

However, in the above-described method of manufacturing an insulating film for element isolation by embedding an insulating film in a trench, a TEOS is used by using a CVD apparatus.
Gas and ozone gas are supplied to the inside of the diffusion plate in the reaction chamber, and the gases are mixed inside the diffusion plate,
When a silicon oxide film is formed as an insulating film on the surface of a semiconductor substrate by using the mixed gas, the silicon oxide film is easily affected by a base, for example, a thermal silicon oxide film, and the film quality is deteriorated. The inventor has found a problem.

That is, as a result of the study by the present inventor, T as an organic material having flow characteristics as an embedding material has
Although the use of EOS is effective for embedding, the silicon oxide film formed using TEOS gas and ozone gas is particularly effective when the thermal silicon oxide film is formed on the surface of the trench groove. Is affected, the silicon oxide film becomes a rough silicon oxide film consisting of a large number of cavities and silicon oxide particles, so that the porous silicon oxide film has poor film quality, and the film quality is deteriorated. There is a problem that characteristics are extremely deteriorated.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor integrated circuit capable of forming a high-performance silicon oxide film which is not affected by a base when forming a silicon oxide film using a mixed gas containing a TEOS gas and an ozone gas. An object of the present invention is to provide an apparatus and a method of manufacturing the same.

The above and other objects and novel features of the present invention will become apparent from the description of the present specification and the accompanying drawings.

[0010]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, the semiconductor integrated circuit device of the present invention is a semiconductor integrated circuit device having an insulating film made of a silicon oxide film, wherein the silicon oxide film is a mixture of TEOS gas, ozone gas, TMP gas or TMB gas. The silicon oxide film is formed using a gas. The silicon oxide film contains a small amount of n-type impurities or a small amount of p-type impurities, so that the silicon oxide film is not affected by an underlying silicon oxide film or the like. It is a silicon oxide film.

Further, the method of manufacturing a semiconductor integrated circuit device according to the present invention is directed to a semiconductor substrate or SOI (Silicon on Insulat).
or) After forming a groove on the surface of a substrate such as a substrate, a trace amount of n-type is formed on the substrate using a mixed gas of TEOS gas, ozone gas, TMP gas or TMB gas using a CVD apparatus. Forming a silicon oxide film containing a small amount of impurities or a small amount of p-type impurities, and removing a surface layer portion of the silicon oxide film by using a CMP method or the like to remove the silicon oxide film embedded in the trench. Forming an insulating film for element isolation comprising:

[0013]

Embodiments of the present invention will be described below in detail with reference to the drawings. In all the drawings for describing the embodiments, components having the same function are denoted by the same reference numerals, and redundant description will be omitted.

FIGS. 1 to 12 are schematic sectional views showing steps of manufacturing a semiconductor integrated circuit device according to an embodiment of the present invention. The semiconductor integrated circuit device according to the present embodiment and a method for manufacturing the same will be described with reference to FIG.

First, a thin silicon oxide film 2 is formed on the surface of a semiconductor substrate (substrate) 1 made of, for example, p-type silicon single crystal by using a CVD method or a thermal oxidation method, and then the CVD method is performed. In use, a silicon nitride film 3 is formed on the silicon oxide film 2 (FIG. 1).

Thereafter, a resist film 4 is applied on the semiconductor substrate 1 and then, using photolithography,
A pattern for forming a groove (trench groove) is formed in the resist film 4. Next, using the resist film 4 as an etching mask, the silicon nitride film 3 below the opening formed in the resist film 4 is removed by etching, and then the silicon oxide film 2 thereunder is etched. And remove it (Fig. 2).

Next, after the unnecessary resist film 4 is removed, the semiconductor substrate 1 under the opening is etched using the silicon nitride film 3 as an etching mask to form an element isolation insulating film. A groove (trench groove) 5 is formed as a region to be formed (FIG. 3).

Next, using the silicon nitride film 3 as a mask, a thin film made of a thermally oxidized silicon film is formed in a region of the semiconductor substrate 1 whose surface is exposed by the groove 5 by using a thermal oxidation method. A silicon oxide film 6 is formed (FIG. 4).

Thereafter, a silicon oxide film 7 which is a feature of the present embodiment is formed on the semiconductor substrate 1 (FIG. 5).
That is, using a CVD apparatus, TEOS gas, ozone gas, and TMP (trimethylphosphate: PO (OCH
₃ ) A silicon oxide film 7 as an insulating film is formed on the semiconductor substrate 1 using a mixed gas with the gas ₃ ).

In this case, TOS gas and ozone gas are T
By mixing the MP gas, the formed silicon oxide film 7 contains a small amount of n-type impurities made of phosphorus (P). The silicon oxide film 7 having excellent film quality can be formed without being affected by the silicon oxide film 6. That is, as in the conventional case where a silicon oxide film is formed using a mixed gas of a TEOS gas and an ozone gas, a large number of cavities and particles are affected by the silicon oxide film 6 made of the underlying thermal silicon oxide film. It is possible to prevent the formation of a rough silicon oxide film made of silicon oxide in a shape, so that it is possible to prevent the formation of a porous silicon oxide film having poor film quality and to form the silicon oxide film 7 having excellent film quality. be able to.

As another mode for forming the silicon oxide film 7 described above, TEO is performed using a CVD apparatus.
S gas, ozone gas and TMB (trimethylborate: B (O
CH ₃ ) ₃ ) Using a mixed gas with the gas, the semiconductor substrate 1
On which a silicon oxide film 7 as an insulating film is formed.

In this case, TOS gas and ozone gas are T
By mixing the MB gas, the formed silicon oxide film 7 contains a trace amount of a p-type impurity of boron (B). The silicon oxide film 7 having excellent film quality can be formed without being affected by the silicon oxide film 6. That is, as in the conventional case where a silicon oxide film is formed using a mixed gas of a TEOS gas and an ozone gas, a large number of cavities and particles are affected by the silicon oxide film 6 made of the underlying thermal silicon oxide film. It is possible to prevent the formation of a rough silicon oxide film made of silicon oxide in a shape, so that it is possible to prevent the formation of a porous silicon oxide film having poor film quality and to form the silicon oxide film 7 having excellent film quality. be able to.

Further, when the silicon oxide film 7 is formed, the concentration at which the silicon oxide film 7 contains an n-type impurity made of phosphorus or a p-type impurity made of boron is determined by the present inventors. As a result, 10 ¹⁶ -10 ¹⁹ atoms / c
By setting m ³ , the silicon oxide film 7 having excellent film quality can be formed without being affected by the underlayer of the silicon oxide film 7. In addition, since the n-type impurity of phosphorus or the p-type impurity of boron contained in the silicon oxide film 7 is very small, the impurity is prevented from entering the semiconductor substrate 1 and the like underlying the silicon oxide film 7. As a result, it is possible to prevent the electrical characteristics of the semiconductor elements formed on the semiconductor substrate 1 from deteriorating.

Next, for example, CMP (Chemical Mechanica)
l Polishing technique such as chemical mechanical polishing) is used to remove the silicon oxide film 7, the underlying silicon nitride film 3, and the underlying silicon oxide film 2 under the surface layer,
The surface of the silicon oxide film (insulating film for element isolation) 7a buried in the groove 5 and the surface of the semiconductor substrate 1 are flattened (FIG. 6). By this manufacturing process, the silicon oxide film 7a embedded in the groove 5 in a selective region of the semiconductor substrate 1
And a silicon oxide film 7a as an element isolation insulating film having the same plane as the surface of the semiconductor substrate 1 is formed in the flattened region of the semiconductor substrate 1. be able to.

In addition to the element isolation insulating film consisting of the silicon oxide film 7a buried in the trench 5, the cross-sectional shape is formed on the semiconductor substrate 1 by using the manufacturing process of the silicon oxide film 7 described above. After forming a rectangular shallow groove, a silicon oxide film 7 is buried in the groove and the semiconductor substrate 1 is formed.
The silicon oxide film 7a serving as an element isolation insulating film can be formed in various modes including a silicon oxide film or the like that is more convex than the surface of the semiconductor device.

Next, for example, a MOSFET is formed in the element formation region of the semiconductor substrate 1 (FIG. 7). In this case, after a gate insulating film 8 made of, for example, a silicon oxide film is formed on the semiconductor substrate 1, a polycrystalline silicon film containing, for example, phosphorus as an impurity is formed as a gate electrode 9 thereon. After an insulating film 10 made of, for example, a silicon oxide film is formed thereon, a pattern such as a gate electrode is formed using a photolithography technique and a selective etching technique.

After that, a silicon oxide film is formed on the semiconductor substrate 1 by using the CVD method, and then, using a photolithography technique and a selective etching technique, a sidewall insulating film ( Side wall spacer)
11 is formed. Next, using the gate region 12 composed of the gate electrode 9 and the like as a mask, an ion implantation method is used to ion-implant an n-type impurity such as phosphorus into the semiconductor substrate 1, and then a thermal diffusion process is performed. A semiconductor region 13 serving as a drain is formed.

Thereafter, a silicon oxide film 14 is formed on the semiconductor substrate 1 (FIG. 8). That is, a silicon oxide film 14 as an insulating film is formed on the semiconductor substrate 1 using a mixed gas of a TEOS gas, an ozone gas, a TMP gas, or a TMB gas using a CVD apparatus.

In this case, similarly to the above-described method of forming the silicon oxide film 7, by mixing the TMP gas or the TMB gas with the TEOS gas and the ozone gas, the formed silicon oxide film 14 Type impurity or p-type impurity composed of boron is contained in a very small amount, so that the silicon oxide film 14 of excellent film quality is formed without being affected by the silicon oxide film 6 under the silicon oxide film 14 or the like. be able to.

Next, if necessary, the surface of the silicon oxide film 14 is removed by using a polishing technique such as a CMP method, and a flattened silicon oxide film 14 is formed.

Thereafter, a connection hole is formed in the silicon oxide film 14, and then, for example, tungsten or the like is buried in the connection hole by using a selective CVD method to form a plug 15, and a wiring made of, for example, aluminum or the like is formed thereon. After the layers are formed by using a sputtering method or the like, a patterned wiring layer 16 is formed by using a photolithography technique and a selective etching technique (FIG. 9). In this case, as another embodiment, the plug 15 is a plug 15 made of the same material as the wiring layer 16, and the plug 15 and the wiring layer 16 are used in the same manufacturing process by the above-described manufacturing process of the wiring layer 16. It is possible to adopt a mode of forming by.

Next, a silicon oxide film 17 as an interlayer insulating film is formed on the semiconductor substrate 1 (FIG. 10). That is, the silicon oxide film 17 as an insulating film is formed on the semiconductor substrate 1 using a mixed gas of TEOS gas, ozone gas, TMP gas, or TMB gas using a CVD apparatus.

In this case, similarly to the above-described method of forming the silicon oxide film 7, by mixing the TMP gas or the TMB gas with the TEOS gas and the ozone gas, the formed silicon oxide film 17 Forming a silicon oxide film 17 of excellent film quality without being affected by the wiring layer 16 underlying the silicon oxide film 17 because the n-type impurity or a p-type impurity composed of boron is contained in a trace amount. Can be.

Next, if necessary, the surface of the silicon oxide film 17 is removed by using a polishing technique such as a CMP method to form a flattened silicon oxide film 17.

Then, after forming a connection hole in the silicon oxide film 17, a wiring layer made of, for example, aluminum is formed by using a sputtering method or the like, and then a pattern is formed by using a photolithography technique and a selective etching technique. The patterned wiring layer 18 is formed (FIG. 11).

Next, a silicon oxide film 19 as an interlayer insulating film is formed on the semiconductor substrate 1 (FIG. 12). That is, using a CVD apparatus, a silicon oxide film 19 as an insulating film is formed on the semiconductor substrate 1 by using a mixed gas of TEOS gas, ozone gas, TMP gas, or TMB gas.

In this case, similarly to the above-described method of forming the silicon oxide film 7, by mixing a TMP gas or a TMB gas with a TEOS gas and an ozone gas, the formed silicon oxide film 19 is formed of n Forming a silicon oxide film 19 of excellent film quality without being affected by the wiring layer 18 and the like underlying the silicon oxide film 19 because the silicon oxide film 19 contains a trace amount of a p-type impurity of boron or boron. Can be.

Next, if necessary, the surface of the silicon oxide film 19 is removed by using a polishing technique such as a CMP method to form a flattened silicon oxide film 19.

Thereafter, although not shown, after forming a connection hole in the silicon oxide film 19, a wiring layer made of, for example, aluminum or the like is formed by using a sputtering method or the like. Is used to form a patterned wiring layer. Next, after forming a multilayer wiring layer as required, a passivation film is formed, thereby completing the semiconductor integrated circuit device manufacturing process.

According to the method of manufacturing a semiconductor integrated circuit device of the present embodiment, when forming the silicon oxide film 7a as an insulating film for element isolation, the TEO is formed using a CVD apparatus.
Since the silicon oxide film 7 is formed using a mixed gas of S gas, ozone gas, TMP gas, or TMB gas, a trace amount of n-type impurities of phosphorus or p-type impurities of boron Because it is contained in
The silicon oxide film 7 having excellent film quality can be formed without being affected by the silicon oxide film 6 made of the thermal silicon oxide film underlying the silicon oxide film 7.

That is, as in the conventional case where a silicon oxide film is formed using a mixed gas of TEOS gas and ozone gas, a large number of silicon oxide films 6 are formed under the influence of the silicon oxide film 6 made of the underlying thermal silicon oxide film. Since it is possible to prevent the formation of a rough silicon oxide film composed of voids and particulate silicon oxide, it is possible to prevent the formation of a porous silicon oxide film having a poor film quality and to provide a silicon oxide film 7 of excellent film quality. Can be formed.

In forming the silicon oxide film 7, the concentration at which the silicon oxide film 7 contains an n-type impurity made of phosphorus or a p-type impurity made of boron is determined by the present inventors. As a result, 10 ¹⁶ -10 ¹⁹ atoms / cm
^By setting to ³ , the silicon oxide film 7 of excellent film quality is not affected by the underlayer of the silicon oxide film 7.
Can be formed. In addition, since the n-type impurity of phosphorus or the p-type impurity of boron contained in the silicon oxide film 7 is very small, the impurity is prevented from entering the semiconductor substrate 1 and the like underlying the silicon oxide film 7. As a result, it is possible to prevent the electrical characteristics of the semiconductor elements and the like formed on the semiconductor substrate 1 from deteriorating.

According to the semiconductor integrated circuit device of this embodiment and the method of manufacturing the same, silicon oxide film 14 as an insulating film and silicon oxide films 17 and 1 as an interlayer insulating film are provided.
9 is formed using a mixed gas of TEOS gas, ozone gas, TMP gas, or TMB gas using a CVD apparatus, so that the formed silicon oxide films 14, 17, 19 are formed. , An n-type impurity of phosphorus or a p-type impurity of boron is contained in a very small amount, so that the silicon oxide film 1 of excellent film quality is not affected by the insulating film 6 underlying the silicon oxide film.
4, 17, 19 can be formed.

Further, the above-described silicon oxide films 14, 1
In forming the layers 7 and 19, the concentration at which the silicon oxide film contains an n-type impurity made of phosphorus or a p-type impurity made of boron is determined by the present inventors to be 10 ¹⁶
By setting the concentration to 10 ¹⁹ atoms / cm ³ , the silicon oxide films 14, 17, and 19 having excellent film quality can be formed without being affected by the base of the silicon oxide film. Further, since the n-type impurities made of phosphorus or the p-type impurities made of boron contained in the silicon oxide films 14, 17, and 19 are minute, the silicon oxide films 14, 17, and
Since the impurities can be prevented from penetrating into the semiconductor substrate 1, the wiring layer 16, and the like as the base 19, the electrical characteristics of the semiconductor element, the wiring layer 16, and the like formed on the semiconductor substrate 1 can be prevented from deteriorating. .

Further, according to the semiconductor integrated circuit device and the method of manufacturing the same according to the present embodiment, silicon oxide film 7a as an insulating film for element isolation, silicon oxide film 14 as an insulating film, and silicon oxide film as an interlayer insulating film Membrane 17,
In forming the TEOS 19, TEOS is performed using a CVD apparatus.
By using a mixed gas of a gas, an ozone gas, a TMP gas, or a TMB gas, as described above, the surface morphology (surface smoothness) of the silicon oxide film is not affected by the underlayer of the silicon oxide film. ), The silicon oxide films 7a, 1 having excellent film quality such as
By being able to form 4,17,19,
Manufacturing yield can be improved. In addition, since a silicon oxide film containing a small amount of n-type impurities or a small amount of p-type impurities is formed by a CVD method, a deposition rate (depo rate) can be increased.
Throughput can be improved.

Although the invention made by the inventor has been specifically described based on the embodiments of the present invention, the present invention is not limited to the above embodiments, and various modifications may be made without departing from the scope of the invention. Needless to say, it can be changed.

For example, according to the semiconductor integrated circuit device and the method of manufacturing the same of the present invention, a semiconductor substrate on which a semiconductor element is formed can be changed to a substrate such as an SOI substrate.
A semiconductor integrated circuit device in which various semiconductor elements such as an ET, a CMOSFET, and a bipolar transistor are combined, and a method for manufacturing the same can be provided.

Further, the present invention relates to a MOSFET, a CMO
Logic or SRAM (Static Random Access Mem) with SFET, BiCMOSFET, etc.
ory), various semiconductor integrated circuit devices having a memory system such as a DRAM (Dynamic Random Access Memory), and a method of manufacturing the same.

[0049]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows.

(1). According to the semiconductor integrated circuit device and the method of manufacturing the same of the present invention, when forming a silicon oxide film as an insulating film for element isolation, using a CVD device,
By using a mixed gas of TEOS gas, ozone gas, TMP gas or TMB gas, TE
By mixing the TMP gas or the TMB gas with the OS gas and the ozone gas, the formed silicon oxide film has an n-type impurity of phosphorus or a p-type of boron.
Since a small amount of the type impurity is contained, a silicon oxide film having excellent film quality can be formed without being affected by the silicon oxide film formed of the thermal silicon oxide film underlying the silicon oxide film.

When the silicon oxide film is formed, the concentration at which the silicon oxide film contains an n-type impurity made of phosphorus or a p-type impurity made of boron is as follows:
As a result of the study by the present inventors, a silicon oxide film having excellent film quality can be formed without being affected by the base of the silicon oxide film by setting the concentration to 10 ¹⁶ to 10 ¹⁹ atoms / cm ³ . Further, since the n-type impurity of phosphorus or the p-type impurity of boron contained in the silicon oxide film is very small, the impurity can be prevented from entering a semiconductor substrate or the like underlying the silicon oxide film, It is possible to prevent electrical characteristics of a semiconductor element and the like formed on the semiconductor substrate from being deteriorated.

(2). According to the semiconductor integrated circuit device and the method of manufacturing the same of the present invention, when forming a silicon oxide film as an insulating film and a silicon oxide film as an interlayer insulating film, a TEOS gas, an ozone gas, a TMP By using a mixed gas of a gas or a TMB gas and forming a silicon oxide film by mixing a TMP gas or a TMB gas with a TEOS gas and an ozone gas, an n-type phosphorus Since a small amount of impurities or p-type impurities including boron is contained, a silicon oxide film having excellent film quality can be formed without being affected by an insulating film or the like underlying the silicon oxide film.

When the silicon oxide film is formed, the value at which the silicon oxide film contains an n-type impurity made of phosphorus or a p-type impurity made of boron is determined by the present inventors. As a result, 10 ¹⁶ to 10 ¹⁹ atoms / cm
^By setting to ³ , a silicon oxide film having excellent film quality can be formed without being affected by the base of the silicon oxide film. Further, since the n-type impurity composed of phosphorus or the p-type impurity composed of boron contained in the silicon oxide film is very small, the impurity is prevented from entering the semiconductor substrate, the wiring layer, etc. under the silicon oxide film. This can prevent the electrical characteristics of the semiconductor element and the wiring layer formed on the semiconductor substrate from deteriorating.

(3). According to the semiconductor integrated circuit device and the method of manufacturing the same of the present invention, when forming a silicon oxide film as an insulating film for element isolation, a silicon oxide film as an insulating film, and a silicon oxide film as an interlayer insulating film,
TEOS gas, ozone gas and TMP
By using a gas or a mixed gas with a TMB gas, as described above, the film has good surface morphology (smoothness of the surface) without being affected by the underlayer of the silicon oxide film. The production yield can be improved by forming a silicon oxide film having excellent film quality such as a high quality. In addition, since a silicon oxide film containing a small amount of n-type impurities or a small amount of p-type impurities is formed by a CVD method, a deposition rate (depo rate) can be increased; Can be improved.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing a manufacturing process of a semiconductor integrated circuit device according to an embodiment of the present invention.

FIG. 2 is a schematic sectional view showing a manufacturing process of the semiconductor integrated circuit device according to one embodiment of the present invention;

FIG. 3 is a schematic sectional view showing a manufacturing process of the semiconductor integrated circuit device according to one embodiment of the present invention;

FIG. 4 is a schematic cross-sectional view showing a manufacturing step of the semiconductor integrated circuit device according to one embodiment of the present invention;

FIG. 5 is a schematic cross-sectional view showing a manufacturing step of the semiconductor integrated circuit device according to one embodiment of the present invention;

FIG. 6 is a schematic cross-sectional view showing a manufacturing step of the semiconductor integrated circuit device according to one embodiment of the present invention;

FIG. 7 is a schematic cross-sectional view showing a manufacturing step of the semiconductor integrated circuit device according to one embodiment of the present invention;

FIG. 8 is a schematic cross-sectional view showing a manufacturing step of the semiconductor integrated circuit device according to one embodiment of the present invention;

FIG. 9 is a schematic cross-sectional view showing a manufacturing step of the semiconductor integrated circuit device according to one embodiment of the present invention;

FIG. 10 is a schematic cross-sectional view showing a manufacturing step of the semiconductor integrated circuit device according to one embodiment of the present invention;

FIG. 11 is a schematic cross-sectional view showing a manufacturing step of the semiconductor integrated circuit device according to one embodiment of the present invention;

FIG. 12 is a schematic cross-sectional view showing a manufacturing step of the semiconductor integrated circuit device according to one embodiment of the present invention;

[Explanation of symbols]

 Reference Signs List 1 semiconductor substrate (substrate) 2 silicon oxide film 3 silicon nitride film 4 resist film 5 groove 6 silicon oxide film 7 silicon oxide film 7a silicon oxide film (insulating film for element isolation) 8 gate insulating film 9 gate electrode 10 insulating film 11 sidewall Insulating film 12 Gate region 13 Semiconductor region 14 Silicon oxide film (insulating film) 15 Plug 16 Wiring layer 17 Silicon oxide film (interlayer insulating film) 18 Wiring layer 19 Silicon oxide film (interlayer insulating film)

Claims (9)

[Claims] 1. A semiconductor integrated circuit device having an insulating film made of a silicon oxide film on a substrate, wherein the silicon oxide film is formed using a mixed gas containing a TEOS gas and an ozone gas. A semiconductor integrated circuit device, wherein the silicon film contains a small amount of n-type impurities or a small amount of p-type impurities. 2. The semiconductor integrated circuit device according to claim 1, wherein said silicon oxide film is an element isolation insulating film embedded in a groove formed in said substrate. Integrated circuit device. 3. The semiconductor integrated circuit device according to claim 1, wherein said silicon oxide film is an insulating film or an interlayer insulating film formed on said substrate. . 4. The semiconductor integrated circuit device according to claim 1, wherein said silicon oxide film is
The silicon oxide film is formed using a mixed gas of EOS gas, ozone gas, TMP gas, or TMB gas, and the silicon oxide film contains a small amount of n-type impurities or a small amount of p-type impurities. Semiconductor integrated circuit device. 5. The semiconductor integrated circuit device according to claim 1, wherein a concentration of a small amount of n-type impurities or a small amount of p-type impurities contained in said silicon oxide film. Is a semiconductor integrated circuit device having a density of 10 ¹⁶ to 10 ¹⁹ atoms / cm ³ . 6. A step of forming a groove on a surface of a substrate, and a slight amount of n-type impurities or a small amount of n-type impurities on the substrate using a mixed gas containing a TEOS gas and an ozone gas using a CVD apparatus. Forming a silicon oxide film containing an appropriate p-type impurity; and removing the surface layer of the silicon oxide film by using a CMP method or the like to form the silicon oxide film embedded in the trench. Forming a device isolation insulating film. 7. The method according to claim 1, further comprising the steps of:
Forming a silicon oxide film containing a small amount of n-type impurities or a small amount of p-type impurities by using a mixed gas containing an EOS gas and an ozone gas; Forming connection holes,
Forming an insulating film or an interlayer insulating film made of the silicon oxide film. 8. The method for manufacturing a semiconductor integrated circuit device according to claim 6, wherein said silicon oxide film is
The silicon oxide film is formed using a mixed gas of EOS gas, ozone gas, TMP gas, or TMB gas, and the silicon oxide film contains a small amount of n-type impurities or a small amount of p-type impurities. A method for manufacturing a semiconductor integrated circuit device. 9. The method for manufacturing a semiconductor integrated circuit device according to claim 6, wherein a small amount of n-type impurities or a small amount of p-type impurities contained in said silicon oxide film. A method for manufacturing a semiconductor integrated circuit device, wherein the impurity concentration is 10 ¹⁶ to 10 ¹⁹ atoms / cm ³ .