JPH10189491A5 - - Google Patents

Info

Publication number
JPH10189491A5
JPH10189491A5 JP1997301179A JP30117997A JPH10189491A5 JP H10189491 A5 JPH10189491 A5 JP H10189491A5 JP 1997301179 A JP1997301179 A JP 1997301179A JP 30117997 A JP30117997 A JP 30117997A JP H10189491 A5 JPH10189491 A5 JP H10189491A5
Authority
JP
Japan
Prior art keywords
boron
silicon
film
layer
conformal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997301179A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10189491A (ja
JP4065351B2 (ja
Filing date
Publication date
Priority claimed from US08/784,657 external-priority patent/US6017818A/en
Application filed filed Critical
Publication of JPH10189491A publication Critical patent/JPH10189491A/ja
Publication of JPH10189491A5 publication Critical patent/JPH10189491A5/ja
Application granted granted Critical
Publication of JP4065351B2 publication Critical patent/JP4065351B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP30117997A 1996-10-31 1997-10-31 欠陥密度の低いＴｉ−Ｓｉ−Ｎ及びＴｉ−Ｂ−Ｎベースの絶縁保護性障壁膜の製法 Expired - Fee Related JP4065351B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US2879896P 1996-10-31 1996-10-31
US028798 1997-01-21
US08/784,657 US6017818A (en) 1996-01-22 1997-01-21 Process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density
US784657 1997-01-21

Publications (3)

Publication Number Publication Date
JPH10189491A JPH10189491A (ja) 1998-07-21
JPH10189491A5 true JPH10189491A5 (https=) 2005-07-07
JP4065351B2 JP4065351B2 (ja) 2008-03-26

Family

ID=26704095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30117997A Expired - Fee Related JP4065351B2 (ja) 1996-10-31 1997-10-31 欠陥密度の低いＴｉ−Ｓｉ−Ｎ及びＴｉ−Ｂ−Ｎベースの絶縁保護性障壁膜の製法

Country Status (3)

Country Link
JP (1) JP4065351B2 (https=)
KR (1) KR19980032971A (https=)
TW (1) TW363213B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6475912B1 (en) 1998-06-01 2002-11-05 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method and apparatus for fabricating the same while minimizing operating failures and optimizing yield
JP2003045960A (ja) * 2001-08-01 2003-02-14 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
WO2007094044A1 (ja) * 2006-02-14 2007-08-23 Fujitsu Limited 半導体装置の製造方法、及び半導体製造装置
JP2008041977A (ja) * 2006-08-08 2008-02-21 Nec Electronics Corp 半導体回路装置の製造方法

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