TW363213B - A process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density - Google Patents
A process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect densityInfo
- Publication number
- TW363213B TW363213B TW086116121A TW86116121A TW363213B TW 363213 B TW363213 B TW 363213B TW 086116121 A TW086116121 A TW 086116121A TW 86116121 A TW86116121 A TW 86116121A TW 363213 B TW363213 B TW 363213B
- Authority
- TW
- Taiwan
- Prior art keywords
- boron
- gas
- silicon
- films
- source
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
- H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
- H10W20/048—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by using plasmas or gaseous environments, e.g. by nitriding
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2879896P | 1996-10-31 | 1996-10-31 | |
| US08/784,657 US6017818A (en) | 1996-01-22 | 1997-01-21 | Process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW363213B true TW363213B (en) | 1999-07-01 |
Family
ID=26704095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086116121A TW363213B (en) | 1996-10-31 | 1997-10-30 | A process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4065351B2 (https=) |
| KR (1) | KR19980032971A (https=) |
| TW (1) | TW363213B (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6475912B1 (en) | 1998-06-01 | 2002-11-05 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method and apparatus for fabricating the same while minimizing operating failures and optimizing yield |
| JP2003045960A (ja) * | 2001-08-01 | 2003-02-14 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| WO2007094044A1 (ja) * | 2006-02-14 | 2007-08-23 | Fujitsu Limited | 半導体装置の製造方法、及び半導体製造装置 |
| JP2008041977A (ja) * | 2006-08-08 | 2008-02-21 | Nec Electronics Corp | 半導体回路装置の製造方法 |
-
1997
- 1997-10-20 KR KR1019970053690A patent/KR19980032971A/ko not_active Withdrawn
- 1997-10-30 TW TW086116121A patent/TW363213B/zh not_active IP Right Cessation
- 1997-10-31 JP JP30117997A patent/JP4065351B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR19980032971A (ko) | 1998-07-25 |
| JPH10189491A (ja) | 1998-07-21 |
| JP4065351B2 (ja) | 2008-03-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |