TW363213B - A process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density - Google Patents

A process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density

Info

Publication number
TW363213B
TW363213B TW086116121A TW86116121A TW363213B TW 363213 B TW363213 B TW 363213B TW 086116121 A TW086116121 A TW 086116121A TW 86116121 A TW86116121 A TW 86116121A TW 363213 B TW363213 B TW 363213B
Authority
TW
Taiwan
Prior art keywords
boron
gas
silicon
films
source
Prior art date
Application number
TW086116121A
Other languages
English (en)
Chinese (zh)
Inventor
Jiong-Ping Lu
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/784,657 external-priority patent/US6017818A/en
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW363213B publication Critical patent/TW363213B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43Chemical deposition, e.g. chemical vapour deposition [CVD]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/031Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H10W20/048Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein by using plasmas or gaseous environments, e.g. by nitriding

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
TW086116121A 1996-10-31 1997-10-30 A process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density TW363213B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2879896P 1996-10-31 1996-10-31
US08/784,657 US6017818A (en) 1996-01-22 1997-01-21 Process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density

Publications (1)

Publication Number Publication Date
TW363213B true TW363213B (en) 1999-07-01

Family

ID=26704095

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086116121A TW363213B (en) 1996-10-31 1997-10-30 A process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density

Country Status (3)

Country Link
JP (1) JP4065351B2 (https=)
KR (1) KR19980032971A (https=)
TW (1) TW363213B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6475912B1 (en) 1998-06-01 2002-11-05 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method and apparatus for fabricating the same while minimizing operating failures and optimizing yield
JP2003045960A (ja) * 2001-08-01 2003-02-14 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
WO2007094044A1 (ja) * 2006-02-14 2007-08-23 Fujitsu Limited 半導体装置の製造方法、及び半導体製造装置
JP2008041977A (ja) * 2006-08-08 2008-02-21 Nec Electronics Corp 半導体回路装置の製造方法

Also Published As

Publication number Publication date
KR19980032971A (ko) 1998-07-25
JPH10189491A (ja) 1998-07-21
JP4065351B2 (ja) 2008-03-26

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees