US20040152307A1 - Integrated circuit structure with copper interconnect - Google Patents
Integrated circuit structure with copper interconnect Download PDFInfo
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- US20040152307A1 US20040152307A1 US10/761,784 US76178404A US2004152307A1 US 20040152307 A1 US20040152307 A1 US 20040152307A1 US 76178404 A US76178404 A US 76178404A US 2004152307 A1 US2004152307 A1 US 2004152307A1
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- tungsten
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- 239000010949 copper Substances 0.000 title claims abstract description 72
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 69
- 239000010409 thin film Substances 0.000 claims abstract description 62
- 238000000151 deposition Methods 0.000 claims abstract description 57
- 230000004888 barrier function Effects 0.000 claims abstract description 49
- 229910052751 metal Inorganic materials 0.000 claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 48
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000010937 tungsten Substances 0.000 claims abstract description 42
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910004166 TaN Inorganic materials 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 13
- 229910052718 tin Inorganic materials 0.000 claims abstract description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910008482 TiSiN Inorganic materials 0.000 claims abstract description 7
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 6
- 229910004200 TaSiN Inorganic materials 0.000 claims abstract description 4
- 238000000231 atomic layer deposition Methods 0.000 claims description 16
- 239000002243 precursor Substances 0.000 claims description 11
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 229910008940 W(CO)6 Inorganic materials 0.000 claims description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 6
- 239000010410 layer Substances 0.000 description 28
- 239000010408 film Substances 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000000280 densification Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000002318 adhesion promoter Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76846—Layer combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- This invention relates to MOCVD of barrier and copper thin films for interconnects in semiconductor IC high-speed devices, and specifically to a method of enhancing adhesion properties of CVD copper.
- MOCVD metal organic chemical vapor deposition
- Atomic Layer CVD is a relatively new technology that has been adopted in semiconductor research, and is now being adopted for commercial IC production.
- ALD uses rapidly operating valves to deliver individual reactants into a deposition chamber. Each reactant deposits a mono-layer of material on the IC surface through chemical absorption, and reacts with a previously deposited mono-layer species to form the desired compound.
- the as-formed compound has a much higher density than could ever be achieved by conventional CVD.
- the ALD process also provides excellent step coverage.
- multi-layered, or alternating layered, barrier metal films are formed, e.g., alternating TaN/SiN, TaN/TiN and TiN/SiN thin films, or other combinations thereof, may be easily formed.
- An entire film stack formed by ALD may be only 50 ⁇ thick, and also exhibits excellent barrier properties.
- ALD is particularly useful in the fabrication of a barrier layer, such as a multi-layered TaN/TiN thin film stack.
- TaN thin films exhibit better barrier properties than does a stack of TiN, but does not provide adequate adhesion for subsequent layers, particularly copper thin film layers.
- Single thin film layers also have a grain structure that allows some diffusion along the grain boundaries.
- a TaN/TiN multi-layer thin film stack is desirable, provided that copper can be made to adhere to such a thin film stack.
- a method of adhering copper thin film to a substrate in an integrated circuit structure includes preparing a substrate, including forming active regions and trenches for interconnect structures; depositing a metal barrier layer on the substrate; depositing an ultra thin film layer of tungsten over the barrier metal layer; depositing a copper thin film on the tungsten ultra thin film layer; removing excess copper and tungsten to the level of the metal barrier layer; and completing the integrated circuit structure.
- An integrated circuit having a copper interconnect therein formed over a layer of barrier metal includes a substrate, including active regions and trenches for interconnect structures; a metal barrier layer formed on the substrate, wherein said metal barrier layer is taken from the group of materials consisting of Ta, TiN, TaN, TaSiN and TiSiN, and formed to a thickness of between about 5 nm to 10 nm; an ultra thin film layer of tungsten formed on the barrier metal layer, said tungsten ultra thin film layer having a thickness of between about 1 nm to 5 nm; and a copper thin film layer formed on the tungsten ultra thin film layer to a thickness required to fill the vias and trenches, which is usually a thickness of between about 10 nm to 20 nm.
- It is an object of the invention is to increase the adhesive properties of copper thin films on metal and metal nitride substrates.
- Another object of the invention is to provide a method of depositing tungsten on a metal or metal nitride substrate to enhance the adhesion of a copper thin film to the substrate.
- FIGS. 1 to 5 depict steps in the method of the invention and fabrication of a copper thin film integrated circuit device according to the invention.
- an ultra thin layer of tungsten of between about 1 nm to 5 nm thick, is formed on any conventional barrier layers. Copper is then deposited by CVD. The adhesion between as-deposited tungsten and copper has been demonstrated to be excellent. In this way, barrier films, thin tungsten films, and copper films may be deposited in a smooth streamline CVD process with excellent adhesive integrity, and without the requirement of additional steps which result in a more complex fabrication process.
- the ultra thin tungsten film may be deposited by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD), and acts as an adhesion promoter between the copper thin film and the metal barrier layers.
- MOCVD metal organic chemical vapor deposition
- ALD atomic layer deposition
- the method of the invention provides a simple, easy, and straightforward way to fabricate copper interconnects in high-speed IC devices, and to provide adequate filling of vias and trenches with copper having adequate adhesive properties to the underlying IC structures.
- FIG. 1 Practice of the method of the invention begins with preparation of a substrate, and now referring to FIG. 1, shown generally at 10 .
- the substrate is prepared by formation of active regions therein, such as source 12 , drain 14 , gate 16 , and may include a gate stack 18 .
- the substrate and structures thereon are covered with oxide 20 , and the substrate and structures are patterned, and interconnect trenches, such as trench 21 , formed therein. Patterning and trenching any be performed by any of the methods which are well know to those of skill in the art.
- a layer of metal or metal nitride barrier film 22 is deposited on to the substrate and follows any patterning or trenching structures.
- the barrier metal may be taken from the group of materials comprising Ta, TiN, TaN, TiSiN, and the metal may be deposited by physical vapor deposition (PVD) or MOCVD to a thickness of between about 5 nm to 10 nm.
- a tungsten thin film 24 is deposited either in situ or ex situ on the barrier metal thin films by MOCVD, using either WF 6 or W(CO) 6 as a precursor, to a thickness of between about 1 nm to 5 nm.
- the precursor is either gaseous WF 6 , or a solid substance, such as W(CO) 6 .
- the precursor is fed into, or transported by a carrier gas into, a CVD chamber at a temperature of between about 350° C. to 450° C., and the deposition takes between about one minute to two minutes to establish the tungsten ultra thin film of the desired thickness.
- a copper thin film 26 is deposited onto the tungsten thin film by MOCVD to a thickness of between about 10 nm to 20 nm.
- Copper may be deposited by use of CupraSelectTM Blend precursor, as provided by Schumacher, introduced into the CVD chamber at a temperature of between about 180° C. to 250° C., and the deposition takes between about twelve seconds to ten minutes to establish the copper thin film of the desires thickness.
- the structure is then ready for further copper electrical plating or chemical mechanical polishing (CMP), in the case of a CVD fill-up, to the level of the barrier film, as shown in FIG. 5. Additional IC structures and metallization may then be added to complete the copper thin film IC device, such as the filling of trench 28 by copper 30 , by CVD or some other deposition technique.
- CMP chemical mechanical polishing
- the barrier metal, tungsten and copper may all be deposited by ALD, or any of the layers may be deposited by ALD and the remaining layers formed by CVD or MOCVD. As feature size decreases, particularly below 100 nm, it is advantageous to use ALD. A particularly good protocol is to form the barrier layer of TiN by ALD, ALD the tungsten layer, and deposit the copper by CVD.
Abstract
A method of adhering copper thin film to a substrate in an integrated circuit structure includes preparing a substrate, including forming active regions and trenches for interconnect structures; depositing a metal barrier layer on the substrate; depositing an ultra thin film layer of tungsten over the barrier metal layer; depositing a copper thin film on the tungsten ultra thin film layer; removing excess copper and tungsten to the level of the metal barrier layer; and completing the integrated circuit structure. An integrated circuit having a copper interconnect therein formed over a layer of barrier metal includes a substrate, including active regions, vias and trenches for interconnect structures; a metal barrier layer formed on the substrate, wherein said metal barrier layer is taken from the group of materials consisting of Ta, TiN, TaN, TaSiN and TiSiN, and formed to a thickness of between about 5 nm to 10 nm; an ultra thin film layer of tungsten formed on the barrier metal layer, said tungsten ultra thin film layer having a thickness of between about 1 nm to 5 nm; and a copper thin film layer formed on the tungsten ultra thin film layer to a thickness sufficient to fill the vias and trenches.
Description
- This application is a divisional of application Ser. No. 10/140,465, filed May 6, 2002, entitled Ultra Thin Tungsten Metal Films Used as Adhesion Promoter Between Barrier Metals and Copper, invented by Pan et al.
- This application is related to Ser. No. 09/940,739, filed Aug. 27, 2001, for Thermal densification in the early stage of Copper MOCVD for depositing high quality Cu films with good adhesion and trench filling characteristics.
- This invention relates to MOCVD of barrier and copper thin films for interconnects in semiconductor IC high-speed devices, and specifically to a method of enhancing adhesion properties of CVD copper.
- Copper films which are formed by metal organic chemical vapor deposition (MOCVD) on metal nitride barriers, such as TiN or TaN, for example, which are also formed by MOCVD, do not exhibit good adhesive integrity, especially when the copper layer is grown in situ on a nitride layer or structure. The exhibited adhesion properties have prevented the application of copper CVD technology in IC manufacturing.
- A great deal of research has been done in this area in order to improve the adhesion of copper to underlying barrier films. The related application and the cited prior art identify some improvements which have been made in this field, and include water vapor injection, barrier surface oxidation, barrier surface pre-treatment, and thermal densification. Of these improvements, only thermal densification has been shown to have practical application in providing reasonable throughput when copper is to be deposited in narrow trenches and vias. However, as thermal densification requires additional steps, thermal densification in copper CVD is relatively complex, and has lower throughput compared to conventional CVD.
- Atomic Layer CVD (ALD) is a relatively new technology that has been adopted in semiconductor research, and is now being adopted for commercial IC production. ALD uses rapidly operating valves to deliver individual reactants into a deposition chamber. Each reactant deposits a mono-layer of material on the IC surface through chemical absorption, and reacts with a previously deposited mono-layer species to form the desired compound. The as-formed compound has a much higher density than could ever be achieved by conventional CVD. The ALD process also provides excellent step coverage. By carefully selecting precursors, multi-layered, or alternating layered, barrier metal films are formed, e.g., alternating TaN/SiN, TaN/TiN and TiN/SiN thin films, or other combinations thereof, may be easily formed. An entire film stack formed by ALD may be only 50 Å thick, and also exhibits excellent barrier properties.
- The application of ALD is particularly useful in the fabrication of a barrier layer, such as a multi-layered TaN/TiN thin film stack. TaN thin films exhibit better barrier properties than does a stack of TiN, but does not provide adequate adhesion for subsequent layers, particularly copper thin film layers. Single thin film layers also have a grain structure that allows some diffusion along the grain boundaries. Thus, a TaN/TiN multi-layer thin film stack is desirable, provided that copper can be made to adhere to such a thin film stack.
- U.S. Pat. No. 5,744,192, for Method of using water vapor to increase the conductivity of copper deposited with Cu(Hfac)TMVS, to Nguyen et al., granted Apr. 28, 1998, describes the use of water vapor to enhance the adhesive properties of copper thin films.
- Nuesca et al., Surface effects in the MOCVD of copper, Mat. Res. Soc. Symp. Proc. Vol. 337, 1994, pp177-188, describes the use of hydrogen to enhance the adhesive properties of copper thin films.
- A method of adhering copper thin film to a substrate in an integrated circuit structure includes preparing a substrate, including forming active regions and trenches for interconnect structures; depositing a metal barrier layer on the substrate; depositing an ultra thin film layer of tungsten over the barrier metal layer; depositing a copper thin film on the tungsten ultra thin film layer; removing excess copper and tungsten to the level of the metal barrier layer; and completing the integrated circuit structure.
- An integrated circuit having a copper interconnect therein formed over a layer of barrier metal includes a substrate, including active regions and trenches for interconnect structures; a metal barrier layer formed on the substrate, wherein said metal barrier layer is taken from the group of materials consisting of Ta, TiN, TaN, TaSiN and TiSiN, and formed to a thickness of between about 5 nm to 10 nm; an ultra thin film layer of tungsten formed on the barrier metal layer, said tungsten ultra thin film layer having a thickness of between about 1 nm to 5 nm; and a copper thin film layer formed on the tungsten ultra thin film layer to a thickness required to fill the vias and trenches, which is usually a thickness of between about 10 nm to 20 nm.
- It is an object of the invention is to increase the adhesive properties of copper thin films on metal and metal nitride substrates.
- Another object of the invention is to provide a method of depositing tungsten on a metal or metal nitride substrate to enhance the adhesion of a copper thin film to the substrate.
- This summary and objectives of the invention are provided to enable quick comprehension of the nature of the invention. A more thorough understanding of the invention may be obtained by reference to the following detailed description of the preferred embodiment of the invention in connection with the drawings.
- FIGS. 1 to 5 depict steps in the method of the invention and fabrication of a copper thin film integrated circuit device according to the invention.
- In this invention, an ultra thin layer of tungsten, of between about 1 nm to 5 nm thick, is formed on any conventional barrier layers. Copper is then deposited by CVD. The adhesion between as-deposited tungsten and copper has been demonstrated to be excellent. In this way, barrier films, thin tungsten films, and copper films may be deposited in a smooth streamline CVD process with excellent adhesive integrity, and without the requirement of additional steps which result in a more complex fabrication process.
- The ultra thin tungsten film, may be deposited by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD), and acts as an adhesion promoter between the copper thin film and the metal barrier layers. Compared with other adhesion enhancing methods, the method of the invention provides a simple, easy, and straightforward way to fabricate copper interconnects in high-speed IC devices, and to provide adequate filling of vias and trenches with copper having adequate adhesive properties to the underlying IC structures.
- Practice of the method of the invention begins with preparation of a substrate, and now referring to FIG. 1, shown generally at 10. The substrate is prepared by formation of active regions therein, such as
source 12,drain 14,gate 16, and may include agate stack 18. The substrate and structures thereon are covered withoxide 20, and the substrate and structures are patterned, and interconnect trenches, such astrench 21, formed therein. Patterning and trenching any be performed by any of the methods which are well know to those of skill in the art. - Referring now to FIG. 2, a layer of metal or metal
nitride barrier film 22 is deposited on to the substrate and follows any patterning or trenching structures. By way of example, the barrier metal may be taken from the group of materials comprising Ta, TiN, TaN, TiSiN, and the metal may be deposited by physical vapor deposition (PVD) or MOCVD to a thickness of between about 5 nm to 10 nm. - As shown in FIG. 3, a tungsten
thin film 24, actually, an ultra thin film, is deposited either in situ or ex situ on the barrier metal thin films by MOCVD, using either WF6 or W(CO)6 as a precursor, to a thickness of between about 1 nm to 5 nm. The precursor is either gaseous WF6, or a solid substance, such as W(CO)6. The precursor is fed into, or transported by a carrier gas into, a CVD chamber at a temperature of between about 350° C. to 450° C., and the deposition takes between about one minute to two minutes to establish the tungsten ultra thin film of the desired thickness. - Turning now to FIG. 4, a copper
thin film 26 is deposited onto the tungsten thin film by MOCVD to a thickness of between about 10 nm to 20 nm. Copper may be deposited by use of CupraSelect™ Blend precursor, as provided by Schumacher, introduced into the CVD chamber at a temperature of between about 180° C. to 250° C., and the deposition takes between about twelve seconds to ten minutes to establish the copper thin film of the desires thickness. - The structure is then ready for further copper electrical plating or chemical mechanical polishing (CMP), in the case of a CVD fill-up, to the level of the barrier film, as shown in FIG. 5. Additional IC structures and metallization may then be added to complete the copper thin film IC device, such as the filling of
trench 28 bycopper 30, by CVD or some other deposition technique. - The barrier metal, tungsten and copper may all be deposited by ALD, or any of the layers may be deposited by ALD and the remaining layers formed by CVD or MOCVD. As feature size decreases, particularly below 100 nm, it is advantageous to use ALD. A particularly good protocol is to form the barrier layer of TiN by ALD, ALD the tungsten layer, and deposit the copper by CVD.
- Thus, a method for using ultra thin tungsten metal films as an adhesion promoter between CVD TiSiN, TaN, TaSiN and Cu has been disclosed. It will be appreciated that further variations and modifications thereof may be made within the scope of the invention as defined in the appended claims.
Claims (21)
1. A method of adhering copper thin film to a substrate in an integrated circuit structure comprising:
preparing a substrate, including forming active regions, vias and trenches for interconnect structures;
depositing a metal barrier layer on the substrate;
depositing an ultra thin film layer of tungsten over the barrier metal layer;
depositing a copper thin film on the tungsten ultra thin film layer;
removing excess copper and tungsten to the level of the metal barrier layer; and
completing the integrated circuit structure.
2. The method of claim 1 wherein said depositing an ultra thin film layer of tungsten includes depositing a tungsten layer having a thickness of between about 1 nm to 5 nm.
3. The method of claim 1 wherein said depositing an ultra thin film layer of tungsten includes depositing the tungsten by a deposition method taken from the group of methods consisting of MOCVD and ALD.
4. The method of claim 1 wherein said depositing an ultra thin film layer of tungsten includes depositing the tungsten from a precursor taken from the group of precursors consisting of WF6 and W(CO)6.
5. The method of claim 1 wherein said depositing a barrier metal layer includes depositing a layer of material taken from the group of materials consisting of Ta, TiN, TaN and TiSiN.
6. The method of claim 1 wherein said depositing a barrier metal layer includes depositing a layer of material to a thickness of between about 5 nm to 10 nm.
7. The method of claim 1 wherein said depositing a barrier metal layer includes depositing a layer of material by PVD, ALD or MOCVD.
8. The method of claim 1 wherein said depositing a copper thin film includes depositing a layer of copper to a thickness sufficient to fill vias and trenches in the structure.
9. The method of claim 8 wherein said depositing a copper thin film includes depositing a layer of copper to a thickness sufficient to fill vias and trenches in the structure includes depositing a layer of copper to a thickness of between about 10 nm to 20 nm.
10. The method of claim 1 wherein said depositing a copper thin film includes depositing a layer of copper by PVD, ALD or MOCVD.
11. A method of adhering copper thin film to a substrate in an integrated circuit structure comprising:
preparing a substrate, including forming active regions, vias and trenches for interconnect structures;
depositing a metal barrier layer on the substrate;
depositing an ultra thin film layer of tungsten over the barrier metal layer to a thickness of between about 1 nm to 5 nm from a precursor taken from the group of precursors consisting of WF6 and W(CO)6;
depositing a copper thin film on the tungsten ultra thin film layer;
removing excess copper and tungsten to the level of the metal barrier layer; and
completing the integrated circuit structure.
12. The method of claim 11 wherein said depositing an ultra thin film layer of tungsten includes depositing the tungsten by a deposition method taken from the group of methods consisting of MOCVD and ALD.
13. The method of claim 11 wherein said depositing a barrier metal layer includes depositing a layer of material taken from the group of materials consisting of Ta, TiN, TaN TaSiN and TiSiN.
14. The method of claim 11 wherein said depositing a barrier metal layer includes depositing a layer of material to a thickness of between about 5 nm to 10 nm.
15. The method of claim 11 wherein said depositing a barrier metal layer includes depositing a layer of material by PVD, ALD or MOCVD.
16. The method of claim 11 wherein said depositing a copper thin film includes depositing a layer of copper to a thickness sufficient to fill vias and trenches in the structure.
17. The method of claim 16 wherein said depositing a copper thin film includes depositing a layer of copper to a thickness sufficient to fill vias and trenches in the structure includes depositing a layer of copper to a thickness of between about 10 nm to 20 nm.
18. The method of claim 11 wherein said depositing a copper thin film includes depositing a layer of copper by PVD, ALD or MOCVD.
19. An integrated circuit having a copper interconnect therein formed over a layer of barrier metal comprising:
a substrate, including active regions, vias and trenches for interconnect structures;
a metal barrier layer formed on the substrate, wherein said metal barrier layer is taken from the group of materials consisting of Ta, TiN, TaN and TiSiN, and formed to a thickness of between about 5 nm to 10 nm;
an ultra thin film layer of tungsten formed on the barrier metal layer, said tungsten ultra thin film layer having a thickness of between about 1 nm to 5 nm; and
a copper thin film layer formed on the tungsten ultra thin film layer to a thickness to sufficient to fill the vias and trenches in the structure
20. The integrated circuit of claim 19 wherein said ultra thin film layer of tungsten is formed from a precursor taken from the group of precursors consisting of WF6 and W(CO)6.
21. The method of claim 19 wherein said depositing a copper thin film includes depositing a layer of copper to a thickness sufficient to fill the vias and trenches in the structure includes depositing a layer of copper to a thickness of between about 10 nm to 20 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/761,784 US20040152307A1 (en) | 2002-05-06 | 2004-01-21 | Integrated circuit structure with copper interconnect |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/140,460 US6716744B2 (en) | 2002-05-06 | 2002-05-06 | Ultra thin tungsten metal films used as adhesion promoter between barrier metals and copper |
| US10/761,784 US20040152307A1 (en) | 2002-05-06 | 2004-01-21 | Integrated circuit structure with copper interconnect |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/140,460 Division US6716744B2 (en) | 2002-05-06 | 2002-05-06 | Ultra thin tungsten metal films used as adhesion promoter between barrier metals and copper |
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| Publication Number | Publication Date |
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| US20040152307A1 true US20040152307A1 (en) | 2004-08-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| US10/140,460 Expired - Lifetime US6716744B2 (en) | 2002-05-06 | 2002-05-06 | Ultra thin tungsten metal films used as adhesion promoter between barrier metals and copper |
| US10/761,784 Abandoned US20040152307A1 (en) | 2002-05-06 | 2004-01-21 | Integrated circuit structure with copper interconnect |
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| Application Number | Title | Priority Date | Filing Date |
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| US10/140,460 Expired - Lifetime US6716744B2 (en) | 2002-05-06 | 2002-05-06 | Ultra thin tungsten metal films used as adhesion promoter between barrier metals and copper |
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| Country | Link |
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| US (2) | US6716744B2 (en) |
| JP (1) | JP2004006856A (en) |
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| US20060205235A1 (en) * | 2004-12-01 | 2006-09-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and fabrication method thereof |
| US20070096221A1 (en) * | 2005-10-31 | 2007-05-03 | Kai Frohberg | Semiconductor device comprising copper-based contact plug and a method of forming the same |
| US20090218692A1 (en) * | 2008-02-29 | 2009-09-03 | Roland Hampp | Barrier for Copper Integration in the FEOL |
| US10319826B2 (en) * | 2017-04-12 | 2019-06-11 | International Business Machines Corporation | Replacement metal gate stack with oxygen and nitrogen scavenging layers |
| DE102021110258A1 (en) | 2021-01-22 | 2022-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate structure of a semiconductor device and its manufacturing method |
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| JP4601975B2 (en) * | 2004-03-01 | 2010-12-22 | 東京エレクトロン株式会社 | Deposition method |
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| US20090218692A1 (en) * | 2008-02-29 | 2009-09-03 | Roland Hampp | Barrier for Copper Integration in the FEOL |
| US10319826B2 (en) * | 2017-04-12 | 2019-06-11 | International Business Machines Corporation | Replacement metal gate stack with oxygen and nitrogen scavenging layers |
| DE102021110258A1 (en) | 2021-01-22 | 2022-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate structure of a semiconductor device and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| US6716744B2 (en) | 2004-04-06 |
| JP2004006856A (en) | 2004-01-08 |
| US20030207550A1 (en) | 2003-11-06 |
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