JPH10189465A - Heat treating apparatus for substrate and thin film forming apparatus provided with the apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve throughput by eliminating supplement of a dummy wafer. SOLUTION: A number signal Nw indicating number of contained boards of a quartz boat fed from a coating treating unit is input (S300), and with a value of the signal Nw as a retrieval key, a recipe select table in a hard disk memory is retrieved (S310). The table includes board containing number data and treating recipe data, and stores different treating recipe data for the number data. The treating recipe data is data indicating a heater target temperature according to a lapse time. At the step S310, treating recipe data for specifying the target temperature responsive to the number is selected. Then, the selected recipe data is transferred to the memory, thereby completing setting of treating recipe.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a substrate heat treatment apparatus for simultaneously heat treating a plurality of substrates, and a thin film forming apparatus including the heat treatment apparatus.

[0002] In this specification, a "substrate" is a material such as a semiconductor wafer or a glass substrate to be subjected to a heat treatment.

[0003]

2. Description of the Related Art As an apparatus for simultaneously heat-treating a plurality of substrates, for example, as shown in Japanese Patent Application Laid-Open No. 7-273172, a plurality of substrates are housed in a substrate accommodation boat, and the substrate accommodation boat is placed in a heat treatment furnace. And heat-treating the substrate in a batch system. In this heat treatment apparatus, a dummy wafer is placed in a substrate accommodation boat in order to adjust the number of wafers during batch processing. With this configuration, even when the number of substrates accommodated in the substrate accommodation boat is different, it is possible to make the temperature rise heat history of each wafer constant by refilling the dummy wafers.

[0004]

However, in the above-mentioned conventional technique, it takes time to accommodate the dummy wafers in the substrate accommodation boat. In particular, when the number of substrates is small, the number of dummy wafers increases and the number of dummy wafers increases. The time to do it was huge. For this reason, there has been a problem that the throughput is deteriorated.

An object of the present invention is to improve the throughput by eliminating the need for refilling dummy wafers.

[0006]

Means for Solving the Problems and Their Functions / Effects As means for solving the above-mentioned problems, the following configuration is adopted.

[0007] A substrate heat treatment apparatus according to the present invention includes a substrate accommodation boat accommodating a plurality of substrates, a heat treatment unit for performing heat treatment on the plurality of substrates accommodated in the substrate accommodation boat, and a heat treatment condition in the heat treatment unit. Heat treatment condition setting means, and heat treatment execution means for causing the heat treatment unit to perform heat treatment of the substrate according to the heat treatment conditions determined by the heat treatment condition setting means, wherein the heat treatment condition setting means is provided in the substrate storage boat. The apparatus is characterized in that the apparatus further comprises changing means for changing the heat treatment conditions according to the number of the accommodated substrates.

According to the present invention, the heat treatment for a plurality of substrates is performed according to the heat treatment conditions, and the heat treatment conditions are further changed according to the number of substrates.
Therefore, even when the number of substrates accommodated in the substrate accommodation boat is different, the heat history of each substrate can be made constant without refilling the dummy wafer.

Therefore, according to the present invention, since it is not necessary to refill the dummy wafer, the throughput is excellent.

In the substrate heat treatment apparatus according to the present invention, the heat treatment condition setting means is configured to determine the heat treatment condition by a processing recipe including at least the heat treatment condition, and the change means is configured to change the heat treatment condition according to the number of substrates. A configuration including a recipe changing means for changing the processing recipe can be adopted.

According to this configuration, the processing recipe is changed according to the number of substrates accommodated in the substrate accommodation boat, and the heat treatment conditions are set differently depending on the processing recipe.

Further, in the substrate heat treatment apparatus having the above structure, the heat treatment unit includes a heater disposed around the substrate storage boat, and the processing recipe determines a target temperature of the heater in accordance with an elapsed time. And the recipe changing means may change the target temperature in accordance with the number of substrates.

According to the substrate heat treatment apparatus having this configuration, the target temperature of the heater is changed in accordance with the number of substrates, whereby
The thermal history of each substrate can be made constant.

According to another aspect of the present invention, in the heat treatment apparatus for a substrate having the above-described structure, the heat treatment executing means may include P
As a configuration in which the heat treatment of the substrate is automatically controlled by the ID control, the recipe changing means sets three constants (proportional band, integration time, and differentiation time) of the PID according to the number of substrates in addition to the target temperature of the heater. The configuration may be changed.

According to this configuration, control to the target temperature is performed by:
It becomes even more optimal according to the number of substrates stored.

The thin film forming apparatus of the present invention comprises a coating processing section for supplying a coating liquid to the surface of a substrate to form a coating of the coating liquid, and a heat treatment section for performing a heat treatment on the substrate on which the coating of the coating liquid is formed. A thin film forming apparatus comprising: the heat treatment unit is a substrate heat treatment apparatus of the present invention described above,
The present invention is characterized in that the number of substrates is the number of substrates processed by the coating processing unit.

According to the present invention, the heat treatment conditions are determined according to the number of substrates processed in the coating processing unit. For this reason, in the thin film forming apparatus of the present invention including the coating processing section and the heat treatment section, it is not necessary to provide a special sensor for detecting the number of the substrates accommodated in the substrate accommodation boat.

[0018]

Next, embodiments of the present invention will be described based on examples.

A. Configuration of Thin Film Forming Apparatus: FIG. 1 is a perspective view showing the overall configuration of a thin film forming apparatus provided with a substrate heat treatment apparatus according to one embodiment of the present invention, and FIG. 2 is a plan view thereof. FIG. 3 is a front view showing a part thereof in a broken state.

As shown in the figure, the thin film forming apparatus includes a carrier placing section 10, a coating section 20, and a heat treating section 30.
, And they are integrally connected. The carrier mounting unit 10 takes out the semiconductor wafer (hereinafter, referred to as a substrate) W1 before the coating process from the carrier 12, and
The substrate which has been subjected to a heat treatment after the coating treatment and on which a film such as a silica-based film has been formed is collected on the carrier 12. The coating processing section 20 supplies a coating liquid to the surface of the substrates W1 supplied one by one from the carrier mounting section 10 to form a coating film of the coating liquid. The heat treatment unit 30 includes a substrate accommodation boat 34 formed of a heat-resistant material, for example, a quartz boat 32, a substrate intermediate accommodation unit 34 for accommodating a plurality of substrates W2 coated by the coating processing unit 20, and a quartz boat 32. Heat treatment main body 3 for collectively heat treating a plurality of accommodated substrates W2 after the coating process
6

The carrier 12 of the carrier mounting portion 10 is capable of storing a plurality of substrates, for example, 25 substrates W1 in parallel with each other and at a slight distance from each other in a horizontal posture. , The substrates W1 can be sequentially taken out and collected one by one. This substrate W1
Is carried out by the substrate transfer robot 18.
That is, the substrate transfer robot 18 takes out the substrates W1 before the coating process from the carrier 12 one by one, and inserts the substrates after the coating process and the heat treatment into the carrier 12 one by one.

The coating section 20 has a passage 2 at its center.
1 (FIG. 2), the substrate W is held on one side of the passage 21 and the coating liquid is supplied onto the substrate W1 and rotated in a horizontal plane.
A rotary coating machine 2 for forming a coating of a coating solution on the entire surface of 1
2, a heat treatment plate 24 is provided on the other side for heating the substrate coated with the coating liquid by the rotary coating machine 22 to volatilize the solvent component from the coating of the coating liquid on the substrate surface. I have. The passage 21 is provided with a substrate transfer robot 26 that receives the substrate W1 from the substrate transfer robot 18 of the carrier mounting unit 10 and transfers the substrate W1 in the coating processing unit 20. As shown in FIG. 3, the rotary coating machine 22 includes a chuck 22a that holds and rotates the substrate,
It comprises a scatter prevention cup 22b disposed so as to surround the chuck 22a, and a coating liquid supply nozzle 22c for supplying a coating liquid, for example, a coating liquid for forming a silica-based film, onto the substrate held by the chuck 22a. Have been. In addition, the heat treatment plate 24 has a hot plate 24a in an upper stage,
The lower plate is provided with a cool plate 24b, and the substrate on which the coating film of the coating solution is formed is sequentially contacted or brought close to the hot plate 24a and the cool plate 24b by the rotary coating machine 22, so that the substrate is The solvent component in the film formed on the surface is designed to exert.

As shown in the perspective view of FIG. 4, the quartz boat 32 disposed in the substrate intermediate accommodation section 34 of the heat treatment section 30
A plurality of substrates, for example, 50 substrates W2 after the coating process can be accommodated in a horizontal posture at a slight interval in parallel with each other, and the substrates W2 can be sequentially inserted one by one from the front side thereof. It can be stored and removed. Then, as shown in FIGS. 2 and 3, the substrates W2 that have been subjected to the coating process on the quartz boat 32 are inserted into the substrate intermediate accommodation portion 34 one by one.
A substrate transfer robot 38 for taking out the heat-treated substrates one by one from 2 is provided.

The heat treatment main body 36 of the heat treatment section 30 comprises a boat transfer chamber 40 and a furnace chamber 42. The boat transfer chamber 40 is provided with a boat transfer robot 44 for transferring the quartz boat 32 containing a plurality of substrates W2 after the coating process, and a passage 46 for the boat transfer robot 44 is provided. The furnace chamber 42 is provided with a vertical heat treatment furnace that heat-treats a plurality of substrates W2 housed in the quartz boat 32 at one time. The vertical heat treatment furnace is operated according to a treatment recipe in which heat treatment conditions are described. The detailed configuration of the vertical heat treatment furnace will be described later.

Next, the general operation of the film forming apparatus having the above configuration will be described. When the carrier 12 accommodating a plurality of substrates W1 is placed on the carrier mounting unit 10, the substrates W1 are sequentially taken out of the carrier 12 one by one by the substrate transfer robot 18, and the substrates W1 are placed in the coating processing unit 20. The substrate is transferred to the substrate transfer robot 26. The substrates W1 supplied one by one from the carrier mounting unit 10 to the coating processing unit 20 are sequentially transferred to the rotary coating machine 22 and the heat treatment plate 24 by the substrate transfer robot 26 in the coating processing unit 20, and the rotary coating machine After the application liquid is applied to the surface by 22, the heat treatment plate 24 causes the solvent component of the coating of the coating liquid formed on the surface of the substrate W <b> 1 to be exerted. The substrate W2 that has been subjected to the coating processing in the coating processing unit 20 is transferred from the substrate transfer robot 26 to the substrate transfer robot 38 in the substrate intermediate storage unit 34 of the substrate heat treatment unit, and the substrate transfer robot 38 performs the substrate intermediate processing. The sheets are inserted one by one into the quartz boat 32 disposed in the storage section 34 and stored.

The number of substrates accommodated in the quartz boat 32 is 50 at the maximum as described above, and sometimes less than 50 substrates are accommodated. This capacity is
It is possible to know from how many substrates have been coated on the coating processing unit 20 side, and the coating processing unit 20 informs the heat treatment unit 30 in the post-process of the number of substrates accommodated.

When the substrates have been stored in the quartz boat 32 disposed in the substrate intermediate storage section 34, the quartz boat 32 is transferred into the furnace chamber 42 through the boat transfer chamber 40. Then, the quartz boat 32 is heated by the vertical heat treatment furnace in the furnace chamber 42.
And 50 or less substrates accommodated in the substrate are heat-treated collectively. The details of this heat treatment will be described later together with the vertical heat treatment furnace. When the heat treatment is completed, the substrate after the heat treatment is returned from the heat treatment main unit 36 to the substrate intermediate storage unit 34 by the boat transfer robot 44 while being stored in the quartz boat 32, and the substrate is transferred in the substrate intermediate storage unit 34. The substrates are taken out one by one from the quartz boat 32 by the robot 38, and the taken out substrates are transferred to the substrate transfer robot 26 of the coating processing section 20, and returned to the carrier mounting section 10 by the substrate transfer robot 26.
The substrates on which the required thin film such as a silica-based coating is formed are pushed one by one into the empty carriers 12 mounted on the carrier mounting portion 10 by the substrate transfer robot 18 and collected.

B. Configuration of Vertical Heat Treatment Furnace: The vertical heat treatment furnace installed in the furnace chamber 42 will be described below. FIG.
FIG. 1 is a schematic configuration diagram showing a vertical heat treatment furnace 110 and peripheral devices thereof. The vertical heat treatment furnace 110 includes a furnace core tube 120 made of a quartz tube, and an annular infrared heater 130 provided on the outer periphery of the furnace core tube 120. A nozzle 1 for introducing nitrogen gas is provided above the furnace core tube 120.
22 are provided. The lower part of the furnace core tube 120 is open, and a water-cooled flange 126 is attached via an O-ring 124. The water cooling flange 126 is provided with a nozzle 128 for discharging gas. The infrared heater 130 is divided into three stages along the longitudinal direction of the furnace core tube 120 (the vertical direction in FIG. 5). Thermocouples 132t, 132c, 132b are provided at the center of the three-stage infrared heaters 130t, 130c, 130b, respectively. The thermocouples 132t, 132c, 132b are installed between the light emitting portions of the infrared heaters 130t, 130c, 130b and the furnace core tube 120.

Below the furnace core tube 120, a mounting table 140 for mounting the above-mentioned quartz boat 32 for accommodating a plurality of substrates W is provided. The mounting table 140 includes a quartz heat insulating plate 144 located below the quartz boat 32, and a stainless steel base 1 supporting the quartz heat insulating plate 144 from below.
46. Quartz boat 1 on base 146
A quartz protection tube 150 is provided upright along 42, and three thermocouples 152t, 152c, and
152b is stored. These three thermocouples 15
2t, 152c, and 152b correspond to the uppermost, central, and lowermost portions of the 50 substrates accommodated in the quartz board 32, respectively. Hereinafter, the thermocouples 152t, 152c, 152b provided on the mounting table 140 will be referred to as "profiler thermocouples 152". The thermocouples 132t, 132c, and 132b provided on the infrared heater are referred to as "heater thermocouple 132".

The mounting table 140 is moved up and down by being driven by an elevator 160, whereby the loading and unloading of substrates into and from the furnace core tube 120 are performed. Elevator 160
Is composed of, for example, a ball screw mechanism and a motor. FIG. 6 is an explanatory diagram showing a state where the mounting table 140 is lifted by the elevator 160 and the substrate is loaded.

The profiler thermocouple 152 is mounted on the mounting table 140.
As shown in FIG. 5, the profiler thermocouple 152 is not inserted into the furnace core tube 120 when the substrate W is not loaded. Therefore, cleaning and replacement of the furnace core tube 120 can be easily performed.

The peripheral devices of the vertical heat treatment furnace 110 include:
A main controller 170 for controlling the entire apparatus other than the output control of the heater, a temperature controller 180 and a power regulator 190 for adjusting the output of the infrared heater 130 according to the temperature of the thermocouple, and a power controller 190. Power supply 19
2 is provided. The main controller 170 sets a processing recipe indicating heat treatment conditions in the vertical heat treatment furnace 110 based on the number signal Nw indicating the number of quartz boats 32 sent from the coating processing unit 20. The temperature controller 180 includes heater thermocouples 132t, 132c, 13
Based on the temperatures Ht, Hc, and Hb measured at 2b, the manipulated variables are obtained by using the temperatures Pt, Pc, and Pb measured at the profiler thermocouples 152t, 152c, and 152b for confirmation, and the manipulated variable signals mt, mc, Output mb. The power adjuster 190 controls the three-stage infrared heaters 130t, 130c, 130b according to the operation amount signals mt, mc, mb.
, The outputs PWt, PWc, PWb are adjusted. The main controller 170 and the temperature controller 180
Will be further described in detail.

FIG. 7 is a control block diagram of the temperature controller 180 and its periphery. In FIG. 7, for convenience of illustration, the amount (operating amount mt, heater output PWt) corresponding to the upper heater is shown.
, Heater thermocouple temperature Ht, and profiler thermocouple temperature Pt).

As shown in the figure, the control system performs feedback control of the temperature measured by the heater thermocouple 132 from the control object (heater) H. Temperature controller 180
Includes a self-tuning controller 181 and a target temperature setting unit 182. Target temperature setting section 182
Is a memory that fetches the processing recipe data Dr set by the main controller 170 and stores the time change of the target temperature rt. In addition, this temperature controller 1
80 is realized by a digital computer.

Self-tuning controller 181
Controls the output of the infrared heater 130 according to the temperature Hc measured by the heater thermocouple 132. The self-tuning controller 181 checks the characteristics of the process by itself and determines appropriate PID constants (proportional band, integration time,
(Differential time) is calculated and automatically stored in the controller for control. As a result, the output of the infrared heater 130 is controlled according to the temperature Ht measured by the heater thermocouple 132. The upper infrared heater 1
30t is controlled according to the temperature Ht of the corresponding heater thermocouple 132t. Similarly, the middle stage infrared heater 130c operates according to the temperature Hc of the heater thermocouple 132c.
The lower infrared heater 130b is connected to the heater thermocouple 13
2b is controlled in accordance with the temperature Hb.

Note that the temperature controller 180 actually takes in the temperature Pt measured by the profiler thermocouple 152 and, although not shown in FIG. 7, checks the temperature history of the substrate W from the profiler thermocouple temperature Pt. Is also performed. Specifically, it is checked whether or not the profiler thermocouple temperature Pt falls within a predetermined range centered on the substrate target temperature wt set in the form of the processing recipe. Is notified.

The temperature controller 180 and the power controller 1
90 realizes the function as the heat treatment executing means in the present invention.

FIG. 8 is a block diagram showing the electrical configuration of the main controller 170. As shown, the main controller 170 includes a CPU 171 and a memory 172.
, An input / output interface 173 and a hard disk interface 174. I / O interface 17
3 is connected to a temperature controller 180, and further receives a number signal Nw from the coating processing unit 20. The hard disk interface 174 is connected to a hard disk memory 200 that stores the recipe selection table 202. The recipe selection table 2
02 will be described later.

The CPU 171 executes the software program stored in the memory 172 to execute the heat treatment condition setting means 171a and the changing means 17 according to the present invention.
The function as 1b is realized. The software program is stored in a portable storage medium such as a floppy disk or a CD-ROM, transferred from the portable storage medium to the hard disk memory 200, and stored in the memory 172 when executed.

The main controller 170 thus configured
According to the above, the CPU 171 sets the processing recipe indicating the heat treatment conditions in the vertical heat treatment furnace 110 based on the number signal Nw indicating the number of accommodated quartz boats 32 sent from the coating processing unit 20 as described above. Is performed.

FIG. 9 is a flowchart showing the processing recipe setting processing executed by the CPU 171. This process recipe setting process is executed before the heat treatment every time a new substrate is transferred to the vertical heat treatment furnace 110. As shown, when the processing is started, the CPU 171 first
The number signal Nw sent from the coating processing unit 20 is input (step S300). Next, the CPU 171 searches the recipe selection table 202 in the hard disk memory 200 using the value of the number of stored substrates represented by the number signal Nw as a search key (step S310).

FIG. 10 is an explanatory diagram showing the structure of the recipe selection table 202. As shown in the drawing, the recipe selection table 202 includes substrate storage number data and processing recipe data.
Sheets, 6 to 10, 11 to 15, 16 to 20, 21 to
25, 26-30, 31-35, 36-40,
Different processing recipe data are stored for ten kinds of data such as 41 to 45 sheets and 46 to 50 sheets.

FIG. 10 shows that the number of stored substrates is
The processing recipe data Dr10 for 50 sheets and the processing recipe data Dr1 for 1 to 5 substrate storage number data are shown. As shown, the processing recipe data D
r10 and Dr1 are substrate target temperature wt, keep time,
It includes the target heater temperature rt of the three-stage infrared heaters 130t, 130c, and 130b, and defines the substrate target temperature wt and the heater target temperature rt each time the keep time elapses.

FIG. 11 is a graph showing the relationship between the elapsed time realized by the processing recipe data and the target temperature of the middle infrared heater 130c. As shown in the figure, in the standby state, both the heater target temperature rt and the substrate target temperature wt are preheated to 200 ° C. When the data on the number of stored substrates is 46 to 50, the heater target temperature rt is then changed as shown by the solid line in the figure. That is, 460 is required until 5 minutes elapse after standby.
[° C], followed by 10 minutes (after standby,
(Until 15 minutes), keep 460 [℃]
The temperature is lowered to 15 [° C.] and the state is continued for 60 minutes (until 95 minutes have passed after standby). The substrate target temperature wt when the substrate storage number data is 46 to 50 substrates
Is raised to 400 [° C.] by 5 minutes after standby, as indicated by the broken line in the figure,
400 [° C.] is maintained.

On the other hand, when the data of the number of stored substrates is 1 to 5, after the standby, the heater target temperature rt is changed as shown by a dashed line in the figure. That is, the temperature is raised to 430 [° C.] for 5 minutes after the standby, followed by 10 minutes (until 15 minutes after the standby),
The temperature is maintained at 30 ° C., and then lowered to 410 ° C., and the state is continued for 60 minutes (until 95 minutes have passed after standby). When the data of the number of stored substrates is 1 to 5, the target substrate temperature wt is 4 data of the number of stored substrates.
Like the substrate target temperature wt for 6 to 50 substrates, the temperature is changed as shown by the broken line in the figure.

As described above, the heater target temperature rt is set such that the larger the substrate storage number data, the higher the temperature.
Has been set. In FIGS. 10 and 11, when the data of the number of stored substrates is 46 to 50,
Although only the processing recipe data Dr10 and Dr1 for the number of substrates are illustrated, the processing recipe data for the other substrate storage number data is set such that the higher the substrate storage number data, the higher the temperature. It is assumed that the heater target temperature rt has been set.

Returning to the flowchart of FIG.
In 310, specifically, it is determined which row of the board storage number data of the recipe selection table 202 corresponds to the value of the board storage number represented by the number signal Nw, and the processing recipe data of the corresponding row is selected. Subsequently, the selected processing recipe data Dr is transferred (copied) to the memory 172. As a result, the selected processing recipe data D
r is set as that for a plurality of substrates accommodated in the quartz boat 32. For example, if the number of substrates accommodated in the quartz boat 32 is 46 to 50, the processing recipe data Dr10 is set. If the number of substrates accommodated in the quartz boat 32 is 1 to 5, the processing recipe is Dr. Data Dr1 is set.

As described in detail above, in this embodiment, the processing recipe that defines the heat treatment conditions is changed according to the number of substrates to be heat treated at once. That is, by increasing the heater target temperature rt as the number of substrates increases, even when the number of substrates accommodated in the accommodation boat differs, the thermal history of each substrate is kept constant without refilling dummy wafers. be able to. Therefore, in this embodiment, since it is not necessary to refill the dummy wafer, the throughput is excellent.

Further, in this embodiment, since the coating processing section 20 sends the number signal Nw indicating the number of the quartz boats 32 accommodated, the number of the substrates accommodated in the quartz boat 32 is detected. There is no need to provide a special sensor. Therefore, the configuration is simplified.

In the above embodiment, the processing recipe is changed every time the number of substrates accommodated in the quartz boat 32 increases by five. Instead, the processing recipe is changed every other number of substrates. Is also good. If the processing recipe is changed every time the number of accommodated substrates is smaller than five, for example, every time two substrates are added, the thermal history of each substrate can be more reliably kept constant than in the above-described embodiment.

In the above-described embodiment, the heater temperature is controlled by feedback. Alternatively, the heater may be heated by open control.

Further, the number of substrates accommodated in the quartz boat 32 may be directly detected by providing a sensor. There are various sensors such as an optical sensor and a sensor for detecting the number of sheets by weight.

Although the embodiment of the present invention has been described in detail above, the present invention is not limited to the embodiment, and may be carried out in various modes without departing from the gist of the present invention. It is possible.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an entire configuration of a thin film forming apparatus provided with a substrate heat treatment apparatus according to one embodiment of the present invention.

FIG. 2 is a plan view of the thin film forming apparatus.

FIG. 3 is a front view showing a part of the thin film forming apparatus in a broken state.

4 is a perspective view of the quartz boat 32. FIG.

FIG. 5 is a schematic configuration diagram showing a vertical heat treatment furnace 110 and peripheral devices thereof.

FIG. 6 is a schematic configuration diagram showing a vertical heat treatment furnace 110 after a substrate is carried in and peripheral devices thereof.

FIG. 7 is a control block diagram of the temperature controller 180 and its periphery.

FIG. 8 is a block diagram showing an electrical configuration of a main controller 170.

FIG. 9 is a flowchart showing a process recipe setting process executed by the CPU 171.

FIG. 10 is an explanatory diagram showing a configuration of a recipe selection table 202.

FIG. 11 is a graph showing a relationship between an elapsed time realized by processing recipe data and a target temperature of a middle-stage infrared heater 130c.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Carrier mounting part 12 ... Carrier 18 ... Substrate transfer robot 20 ... Coating processing part 21 ... Passage 22 ... Rotary coating machine 22a ... Chuck 22b ... Scatter prevention cup 22c ... Coating liquid supply nozzle 24 ... Heat treatment plate 24a ... Hot plate 24b Cool plate 26 Substrate transfer robot 30 Heat treatment unit 32 Quartz boat 34 Substrate intermediate storage unit 36 Heat treatment unit 36 Heat treatment main unit 38 Robot 40 Boat transfer room 42 Furnace room 44 Boat transfer Robot 46 ... Passage 110 ... Vertical heat treatment furnace 120 ... Furnace core tube 122 ... Nozzle 124 ... O-ring 126 ... Water cooling flange 128 ... Nozzle 130 ... Infrared heater 132 ... Heater thermocouple 140 ... Mounting table 142 ... Quartz boat 144 ... Quartz heat insulation Plate 146 ... Base 150 ... Quartz protection tube 152 ... Profiler Thermocouple 160 elevator 170 main controller 171 CPU 171a heat treatment condition setting means 171b changing means 172 memory 173 input / output interface 174 hard disk interface 180 temperature controller 181 self-tuning controller 182 target temperature setting section 190: power regulator 192: power supply 200: hard disk memory 202: recipe selection table Dr: processing recipe data W: board

Claims (4)

[Claims] 1. A substrate heat treatment apparatus for performing heat treatment on a plurality of substrates, comprising: a substrate accommodation boat accommodating a plurality of substrates; and a heat treatment for the plurality of substrates accommodated in the substrate accommodation boat. A heat treatment unit for performing heat treatment, heat treatment condition setting means for determining heat treatment conditions in the heat treatment unit, and heat treatment execution means for causing the heat treatment unit to perform a heat treatment on the substrate according to the heat treatment conditions determined by the heat treatment condition setting means. A heat treatment apparatus for a substrate, comprising: a heat treatment condition setting unit that changes the heat treatment condition according to the number of substrates accommodated in the substrate accommodation boat. 2. The heat treatment apparatus for a substrate according to claim 1, wherein the heat treatment condition setting means determines the heat treatment condition by a treatment recipe including at least the heat treatment condition. A heat treatment apparatus for a substrate, comprising: a recipe changing unit that changes the processing recipe according to the number of substrates. 3. The substrate heat treatment apparatus according to claim 2, wherein the heat treatment unit includes a heater disposed around the substrate storage boat, and the processing recipe includes a target temperature of the heater. The recipe changing means changes the target temperature according to the number of substrates, the substrate heat treatment apparatus. 4. A thin film forming apparatus comprising: a coating processing unit that supplies a coating liquid to a surface of a substrate to form a coating film of the coating liquid; and a heat treatment unit that performs a heat treatment on the substrate on which the coating film of the coating liquid is formed. The thin film, wherein the heat treatment unit is the substrate heat treatment apparatus according to claim 1, wherein the number of the substrates is the number of substrates processed by the coating processing unit. Forming equipment.