JP2000195809A - Semiconductor manufacturing method and semiconductor manufacturing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain optimum temperature control of a semiconductor manufacturing device according to the number of substrates to be treated and the kinds of films formed in the former process by a method, wherein the temperature control in heating is changed on the basis of information for the substrates to be treated. SOLUTION: An upper controller 26 has a function of making a temperature PID table, which is used for the temperature control by a temperature controller 25, and the table is downloaded to the controller 25. Moreover, the controller 26 specifies the PID table numbers in the table through event control. The controller 25 performs arithmatic on a control of a PID using a PID constant, which is set in the table of an appointed PID table number according to the number of substrates to be treated and the kinds of films, and controls the temperature in a furnace on the basis of the result of the arithmatic. As a result, since the optimum temperature control can be selected according to the number of the substrates to be treated and the kinds of films in a semiconductor manufacturing method, the temperature recovery of a semiconductor manufacturing device is made uniform.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a C
The present invention relates to a semiconductor manufacturing apparatus such as a VD apparatus and a semiconductor manufacturing method used for the same, and more particularly, to a semiconductor manufacturing method and apparatus which switch temperature control based on instruction information regarding the film type and quantity of a wafer to be processed. is there.

[0002]

2. Description of the Related Art For example, in a CVD apparatus, a substrate such as a silicon wafer is accommodated in a heating furnace, and a reaction gas is supplied while heating the inside of the heating furnace to a predetermined temperature to form a thin film on the substrate. I do. In semiconductor manufacturing, temperature conditions in a heating furnace are extremely important, and the accuracy of this temperature control greatly affects quality. Conventionally, temperature control has been performed without being aware of the number of product wafers or the type of film applied in the previous process.

[0003]

In such a conventional temperature control, the number of batches to be charged in one batch is substantially constant.
That is, the number of wafers was almost constant, and the type of film applied in the previous process was one. Therefore, the heat capacity and heat absorption rate of the wafers were substantially constant, and the number of wafers and the type of the wafer film had little effect on the temperature control.

[0004] However, today, the case where the number of product wafers greatly differs from batch to batch has been seen in actual operation. In addition, since there have been cases where a plurality of types of films are applied in the previous process, the change in the heat capacity and the heat absorption rate of the wafer also increases,
A corresponding temperature control has been required.

[0005] Here, one batch means that after transferring wafers to a boat, inserting the boat into a reaction tube, flowing gas to form a film on the surface of the wafer, and then removing the boat from the reaction tube. A unit that is processed in a series of operations of extracting and removing product wafers from a boat. Usually, 100 product wafers are processed in one batch.

A lot is a unit in which a plurality of wafers are put together, for example, 25 wafers are called one lot.
The wafer includes a product wafer, a monitor wafer, a dummy wafer, and a side dummy wafer. The monitor wafer is an inspection wafer, and the side dummy wafer is used to fill the sides of the U zone and the L zone.

In the U zone (the temperature detection zone of the thermocouple 1) and the L zone (the temperature detection zone of the thermocouple 4) shown in FIG. 1, the temperature inside the wafer greatly changes, which is not suitable for product wafer processing. Since a dummy wafer is not placed, a CU zone (temperature detection zone of thermocouple 2), C
This is useful for maintaining a uniform temperature in the L zone (the temperature detection zone of the thermocouple 3).

(A) As for the usage of dummy wafers, for example, when the total number of boat-inserted wafers is 120, 10 side dummy wafers on both sides and 75 product wafers (3 lots if 25 lots per lot) ), When four monitor wafers are inserted, the remaining 21
There is a method of filling a gap by using a wafer as a dummy wafer.

(B) On the other hand, for example, when the total number of boat-inserted wafers is 120, 10 side dummy wafers on each side, 50 product wafers (2 lots if 1 lot 25 wafers), and monitor wafers When four sheets are inserted, there is a method of filling the gap with the remaining 46 sheets as dummy wafers.

[0010] The number of side dummy wafers can be changed about every 20 batches, and the number of side dummy wafers is almost constant under a constant insertion state. Dummy wafers are used to fill gaps between product wafers, and depending on the number of product wafers, different cases may appear for each batch.

In these cases, for example, assuming that the annealing step for flowing hydrogen is the final step, the wafer passes through several devices until the annealing step (in the previous step), and the surface of the wafer is, for example, a metal film. With. In the annealing process apparatus, there is a great difference in film quality between the dummy wafer, the side dummy wafer, and the product wafer. Since only hydrogen flows on the surfaces of the dummy wafer and the side dummy wafers, the film-like film is about a natural oxide film. In other words, the heat capacity and the heat absorption rate of the product wafer with the metal film are significantly different from those of the product wafer without the metal film (dummy wafer and side dummy wafer).
Therefore, if the number of product wafers put into the apparatus is different, the temperature characteristics measured by the thermocouple in each zone greatly change.

Further, even if the number of product wafers supplied to the apparatus is the same, if the type of film provided in the preceding process before the apparatus is supplied to the apparatus is different, the measurement is also performed by a thermocouple in each zone. Temperature characteristics change greatly. It should be noted that different types of product wafers are not mixed in one batch of processing.

Further, in a single-wafer processing and a single-wafer processing in which the number of processed sheets at a time is small, the number of processed sheets is fixed. The type of film used is important, and it is necessary to perform optimal temperature control according to the type.

Therefore, the present invention has been made to solve the above-mentioned problems, and has an optimum temperature control performance in accordance with the number of substrates to be processed such as wafers and the type of film applied in a previous process. It is an object of the present invention to obtain a semiconductor manufacturing method and an apparatus that can obtain the above.

[0015]

According to the present invention, there is provided a semiconductor manufacturing method in which a substrate to be processed is placed in a heating furnace and subjected to a heat treatment. The temperature control (PID constant in the embodiment) in the heat treatment is switched.

In the first embodiment of the present invention, the instruction information is the number of lots or the number of wafers.
In the second embodiment, the film type of the wafer is further used.

Further, in the present invention, the instruction information includes a processing content applied to the substrate to be processed in a step before the heating processing.

In the second embodiment of the present invention, the processing content is the film type of the product wafer provided in the previous step.

Further, in the present invention, the instruction information includes a quantity (a number of sheets or a lot) of the substrates to be processed simultaneously in the heating processing.

Further, according to the semiconductor manufacturing apparatus of the present invention,
It is configured using any one of the semiconductor manufacturing methods described above.

Further, the present invention provides a semiconductor manufacturing apparatus for heating a substrate to be processed carried into a heating furnace by using control parameters, comprising: input means for inputting a film type and quantity of the substrate to be processed; A film type correspondence control table storing means for storing a control table corresponding to the kind, and a quantity (number of sheets or a number) for storing a control parameter table corresponding to the film kind correspondence table and corresponding to the number of substrates to be inputted. Lot) corresponding control parameter table storage means, searching the film type correspondence table and the quantity correspondence control parameter table based on the film type and quantity input from the input means, and controlling parameters for heat treatment of the substrate to be processed And a search means for determining

[0022]

Embodiments of the present invention will be described below with reference to the drawings. Embodiment 1 FIG. Embodiment 1 describes a semiconductor manufacturing apparatus having a function of switching a temperature control method according to the number of product wafers. FIG. 1 is an overall configuration diagram showing a semiconductor manufacturing apparatus according to an embodiment. In FIG.
A tubular reaction tube 8 is erected inside the heating unit (heater) 5, and a boat 6 as a heated object holding unit is loaded with a plurality of wafers 7 as heated objects into the reaction tube 8. ing.

On the outer peripheral side wall of the heater 5, heating units 11, 1 for heating the respective zones by dividing the inside of the heater 5 into four zones of a U zone, a CU zone, a CL zone, and an L zone from above.
2, 13 and 14 are provided, and on the outer peripheral side wall of the heating section 5 opposed to each heating section, a U for detecting the temperature of each zone is provided.
A zone temperature detection thermocouple 1, a CU zone temperature detection thermocouple 2, a CL zone temperature detection thermocouple 3, and an L zone temperature detection thermocouple 4 are provided. The boat 6 is provided with a cap 9 at its lower part, and the end of the cap is indicated to the elevator 10.

Power cables 15, 16, 17, 18 are connected to the heat generating parts 11, 12, 13, 14 from a power source (not shown) via a breaker 23. Each power cable 15, 16, 17, 18 is provided with a thyristor 19, 20, 21, 22 for power control, respectively. These thyristors 19 to 22 are connected to the output side of the temperature controller 25. The output side of the thermocouples 1 to 4 is connected to the input side of the temperature controller 25. The temperature controller 25 is connected to a host controller 26.

In the above configuration, the temperature controller 25 reads the temperature from the thermocouples 1 to 4, performs a control operation, determines the heater output value, controls the thyristors 19 to 22, and thereby controls the power cables 15 to The power supply 18 controls the power supply to the heaters 11 to 14 in each zone. The wafer 7 is held by a boat 6 and inserted into a reaction tube 8 by an elevator 10. The cap 9 is used for heat retention. The host controller 26 includes the temperature controller 2
5 and other gas controllers, mechanical controllers, pressure controllers, and the like (not shown) through communication connection to perform process event control.

As will be described in detail later, the host controller 26 includes a temperature PID used by the temperature controller 25 for temperature control.
It has a table creation function and downloads a temperature PID table to the temperature controller 25. Host controller 26
Is P in the temperature PID table by the event control.
Specify the ID table number. The temperature controller 25 stores the PID of the designated PID table number in the temperature PID table downloaded from the host controller 26.
PID control calculation is performed using the constants to control the furnace temperature.

FIG. 2 is a block diagram showing details of the temperature controller. The temperature controller 25 includes a CPU 250, a memory (for a program) 251, a memory (for a work) 252, an AD converter (for a thermocouple) 253, a MUX (for a multiplexer thermocouple) 254, and communication control used for communication with the host controller 26. It comprises a unit 256, and generates a thyristor firing pulse and an interlock signal as required.

The temperature controller 25 performs the following PID calculation using PB, I, and D as constants. Deviation = Set temperature value−Measured temperature value PID output value = P output value + I output value + D output value P output value = 100 × deviation ÷ PB I output value = 100 ÷ PB ÷ I × deviation time integration value D output value = 100 ÷ PB x D x deviation time derivative

FIG. 3 is a block diagram showing details of the host controller. The host controller 26 includes a CPU 26
0, a memory (for a program) 261, a memory (for a work) 262, an external storage unit 263, a display control unit 264, a display device 265, and a communication control unit 266, and generate an interlock signal as needed.

The host controller 26 includes a temperature controller 25
Has a function of creating a temperature PID table used for temperature control, and downloads the temperature PID table to the temperature controller 25. The upper controller 26 specifies a PID table number in the temperature PID table by event control. The temperature controller 25 performs a PID control operation using a PID constant set in the table of the designated PID table number to control the furnace temperature.

FIG. 4 is a sequence diagram of one batch process of the host controller 26. Upper controller 2
Reference numeral 6 denotes a communication between the temperature controller 25 and other gas controllers (not shown), a mechanical controller, a pressure controller, and the like, and performs process event control. The wafer 7 is processed according to the gas flowing into the reaction tube 8, the pressure in the reaction tube, and the temperature. The transfer of the wafer 7 is performed by a mechanical controller, a gas controller controls a gas flow rate, and a pressure controller controls a pressure. Then, the temperature controller 25 controls the temperature.

It is the host controller that centrally manages these distributed controllers and has a user interface, and instructs the distributed controllers on processing events under time management.

In FIG. 4, in a temperature standby state (during standby recipe RUN) (1), each field controller is in a ready state, and a boat has not yet been inserted into the reaction tube. In the meantime, a product wafer lot input instruction is issued. The lot input instruction is sent by sending input lot information from the host computer, or
This is performed by the operator inputting the input lot information. Then, the process recipe RUN is instructed. This process recipe RUN instruction is also performed by the host computer sending the instruction or by the operator inputting the instruction, similarly to the lot input instruction.

After the wafers are transferred to the boat based on the input lot information (product wafer charge), a boat up event is instructed to the mechanical controller, and the boat is inserted into the reaction tube (2). Thereafter, if necessary, a ramping event of gradually increasing the temperature is instructed to the temperature controller (3). After the completion of the ramping, a wafer process is performed by gas inflow and pressure adjustment (4). After the completion of the processing, a ramping event is instructed to the temperature controller (5).

After the ramping is completed (6), a boat down start event is instructed to the mechanical controller (7), so that the boat is taken out of the reaction tube. After the boat down is completed (8), the wafers loaded on the boat are carried out to a predetermined position on the transfer shelf (product wafer discharge). When the above process recipe is completed, the standby recipe RUN is started (9).

As is clear from the temperature graphs corresponding to the above-mentioned events shown in FIG. 4, for example, when the boat UP event starts (2), a cold wafer is inserted, the furnace temperature drops once, and then recovers. You can see how it is.

FIG. 5 shows a process temperature graph when the number of product wafers changes according to the conventional method for comparison with the present invention. FIG. 5 shows a temperature graph for two batches. According to FIG. 5A, when the number of product wafers in the first batch is 25, there is only a heat capacity of 25 wafers. It can be seen that even when a product wafer in a room temperature state (low temperature) is inserted into the furnace at the time of boat-up, the temperature drops little, there is no temperature overshoot, and the temperature is recovered.

According to FIG. 5B, when the second batch of 100 product wafers has a heat capacity of 100 wafers, the product wafer at room temperature is inserted into the furnace at the time of boat-up. Then, it can be seen that the temperature drop is large, the temperature overshoot is large, and then the temperature is recovered. It is considered that the cause of this overshoot is that the adjustment of the PID constant was performed for the number of wafers of about 25, and when the number of product wafers was 100, the PID constant for the number of wafers close to 25 was considered. Is not preferred (not appropriate).

FIG. 6 shows the PID constant adjusted for 25 sheets and 1
FIG. 5 shows a process temperature graph in a case where PID constants adjusted for 00 sheets are used and PID constants used for each batch are properly used. According to FIG. 6, two types (50
Since the PID constants adjusted in advance in consideration of the heat capacities of the sheets (A) and 100 (B) are used, it is shown that the temperature recovery is performed well.

FIG. 7 shows the configuration of a PID table that can be created and edited by the host controller 26. One temperature P
The ID table has eight (table numbers 1 to 8) individual Ps.
An ID table 28 is provided. One temperature PID table can be sent to the temperature controller 25 using a communication line when the temperature control download button B1 is pressed,
Usually, as described later, it is selected and sent at the start of the process recipe. In the example of FIG. 7, it is PID_25. CH1 to CH8 in the table correspond to the case where there are a plurality of heating zones of the heater, and in the example of FIG.
CH2 corresponds to CU, CH3 corresponds to CL, and CH4 corresponds to L, and an optimal PID constant is set for each zone. Table numbers 1 to 8 can correspond to, for example, events (1) to (8) in FIG.

At the start of the temperature event defined in the process recipe, when the table number, for example, “3” is sent from the host controller 26 to the temperature controller 25 via the communication line, the temperature controller 25 PI using the PID constant defined for number "3"
D operation is performed to control the temperature.

FIG. 8 shows the structure of a lot correspondence PID table that can be created and edited by the host controller 26. In one lot-corresponding PID table, the number of lots in 20 arrays and the name of the temperature PID table to be used can be defined. For example, if PID_20 is defined in ~ 2 in the drawing, it means that when the number of product wafers is two lots, the temperature PID table with the name PID_20 is used. Also, for example, in FIG.
If 0 is defined, when the number of product wafers is 3 lots or 4 lots, the temperature PID of the name PID_40
It means using a table. After creating the lot correspondence PID table, memory download B2
When is pressed, it can be actually used.

In combination with the process recipe, at the start of the process recipe RUN, for example, the LOT_PI
It is also possible to select a lot correspondence PID table named D_1 so that it can be actually used. Then, the use temperature P corresponding to the number of input lots (for example, 2)
The ID table is determined, and, for example, a temperature PID table named PID_20 is automatically sent to the temperature controller using a communication line (temperature controlled download).

Here, the difference between the temperature control download and the memory download is that the temperature control download transmits data via a communication line (download), whereas the memory download uses a table used in the memory of the host controller. (Download from the external storage device to the internal memory), and the lot-corresponding PID table is not sent to the temperature controller.

FIG. 9 shows the configuration of a PID table corresponding to the number of product wafers that can be created and edited by the host controller 26. In one PID table corresponding to the number of product wafers, the number of product wafers (PW) in 20 arrays and the name of the temperature PID table to be used can be defined. For example, if PID_33 is defined in ~ 33 in the figure, the temperature PID table with the name PID_33 is used when the number of product wafers is 16 to 33.

After the PID table corresponding to the number of product wafers is created, the memory download B3 can be actually used when it is pressed. Further, for example, a PID table corresponding to the number of product wafers named PW_PID_1 is selected from a plurality of PID tables corresponding to the number of product wafers created at the start of the process recipe RUN in combination with the process recipe so that the PID table can be actually used. You can also. Then, a use temperature PID table corresponding to the number of input product wafers is determined, and for example, a temperature PID named PID_33 is determined.
The table is automatically sent to the temperature controller using a communication line (temperature controlled download).

Here, the difference between the temperature control download and the memory download is the same as described above, and the PID table corresponding to the number of wafers is not sent to the temperature controller.

FIG. 10 shows a related diagram when using the lot correspondence PID table. The process recipe 101 includes “LOT_PID_1” 1 as a lot correspondence PID table.
02 is defined. This means that the PID table corresponding to the number of wafers is not used. It should be noted that both the lot correspondence and the wafer number correspondence cannot be simultaneously defined. This depends on the convenience of the customer, and it is possible to arbitrarily determine whether to use a lot or the number of wafers (product wafers).

At the time of the process recipe RUN, for example, “LOT_PID_1” 102 defined here is
The default use table 103 is downloaded from the external storage device to the memory, and the default use table 103 is updated to “0: lot correspondence”. In the process recipe, a temperature event "1", a temperature event "2", and a temperature event "3" are defined as shown by 104, and the respective time 105 and temperature P
An ID table number 106 is defined.

For example, when the temperature event “1” starts, the temperature PID table number “1” is designated. For example, when the lot number and the number of lots are sent as the lot information 107 from the host computer, if the default use table is “0: lot correspondence”, the lot number in the lot information is checked. Calculation information 1 of 2 lots
08 is obtained. For example, as lot information, if the input lot is lot A: 5 and lot B: 15, the total lot number is 2, and the total number is 20.

Then, as shown at 109, the lot-corresponding PID table "LOT_PID_1" in the memory
Find the temperature PID table corresponding to the number of lots defined in. In this case, it is "PID_20". Then, this PID_20 is downloaded to the temperature controller 25. The temperature controller uses the downloaded temperature PID table "PID Temperature control is performed using a temperature PID table number of “20”, for example, a PID constant defined in “1”.

FIG. 11 shows a flowchart of the event switching monitoring process of the host controller. 11 is a flowchart of the description of FIG. 10. First, step S1
In, when the event switch monitoring process is started,
Proceeding to step S2, it is determined whether there is a process recipe RUN instruction. If there is an instruction, the process proceeds to step S3, where it is determined whether or not there is a setting in the lot correspondence PID table.

If there is a setting, the process proceeds to step S4, and the default use table is set to "0: lot correspondence". In step S5, a lot-corresponding PID table in the recipe setting is searched from a plurality of lot-corresponding PID tables, and in step S6, the number of lots is calculated from the input lot information. Then, in step S7, the PID table corresponding to the lot number is downloaded to the temperature controller, and the process proceeds to step S8 to end the processing.

On the other hand, if it is determined in step S3 that no setting has been made in the lot correspondence PID table, the process proceeds to step S9, where it is determined whether there is any setting in the wafer number correspondence PID table. If there is a setting, the process proceeds to step S10, the default use table is set to "1: corresponding to the number of wafers", and the process proceeds to step S11. In step S11, a PID table corresponding to the number of wafers in the recipe setting is searched, and in step S12, the number of wafers is calculated from the input lot information. And step S
At 13, the temperature PID table corresponding to the number of wafers is downloaded to the temperature controller, and the process proceeds to step S8 to end the process.

If the determination in steps S2 and S9 is negative, the process proceeds to step S8 and ends.

FIG. 12 is a flowchart showing a message reception interrupt of the temperature controller 25. In step S21,
When a message interrupt from the host controller occurs and the communication message receiving process is started, in step S22,
It is determined whether the message is a temperature PID table. Temperature P
In the case of an ID table, the process proceeds to step S23, where the received temperature PID table (telegram) is stored in the internal memory, and the process ends in step S26.

On the other hand, in step S22, the temperature PI
If it is determined that the table is not the D table, step S24
It is determined whether or not the message is a temperature event message. If the message is a temperature event message, the process proceeds to step S25, where the temperature PID
The table number is set in the table of the internal memory, and the process ends in step S26. If the temperature event telegram is not determined in step S24, the process also proceeds to step S26 to end the process.

FIG. 13 shows a main flowchart of the temperature controller 25. This is a permanent loop routine that repeats the operation until the power is turned off.
In 1, a control operation is performed using a designated PID constant of a temperature PID table stored in an internal memory to calculate a heater output value. Then, in step S32, a thyristor gate pulse signal corresponding to the heater output value of the control calculation result is output, and in step S33, the temperature is detected, and the detected temperature is notified to the host controller.

FIG. 14 is a flowchart showing a message reception interrupt of the host controller 26. In step S41, when the host controller message reception process is started,
In step S42, it is determined whether or not the received message is for the actually measured temperature value. If the received message is a temperature value, the received temperature value of each zone is set in the temperature table in step S43. The process ends in S44.

FIG. 15 shows a flowchart of the main processing of the host controller 26. In this process, the power is turned off.
This is a permanent loop routine that is repeated until the processing is started.
The start processing of the event switching monitoring processing is performed in 2, and the same processing is repeated thereafter.

As described above, in the first embodiment,
The host controller has a mechanism for switching the control parameters of the temperature controller according to the number of input product wafers, and in advance, using the product wafers to be processed by the apparatus, the optimum control parameters are set to the specified number, Alternatively, the effect of the number of product wafers is suppressed by switching these control parameters in advance in units of designated lots. For example, in the case of PID control, a PID constant corresponding to a change in temperature characteristics is used. Is required in advance.

According to the embodiment described in detail above, by providing a mechanism for switching the temperature control method in accordance with the number of product wafers, even if different numbers of product wafers are processed for each batch, Since an optimum temperature control method according to the selected method is selected, there is an advantage that the temperature recovery performance is made uniform and a change (variation) in the film thickness of the wafer can be suppressed between batches. As a result, the yield of product wafers is improved, and
The unit price of semiconductor products such as memories and CPU chips can be reduced. Conventionally, large-scale processing of a substantially constant amount of wafers has been common, but this makes it possible to cope with individual production of small lots and large lots of ASICs and the like in detail.

Embodiment 2 In the second embodiment, in addition to the switching of the control parameters according to the number of wafers, there is provided a mechanism for switching the control parameters of the temperature controller in accordance with the type of film applied to the input product wafer in the previous process. Will be described.

In this embodiment, the optimum control parameters are obtained in advance for each number of sheets by using all the types of the film of the product wafer to be processed. And
By switching these control parameters, the influence of the input product wafer type can be suppressed.

For example, in the case of PID control, a PID constant corresponding to a change in the temperature characteristic must be obtained in advance. Also, for example, when the final step is an annealing step of flowing hydrogen, optimal control parameters are determined in advance using all types of product wafers immediately before receiving the processing.

FIG. 16 shows a conventional process temperature graph when the type of the product wafer film changes. This corresponds to FIG. 5, and FIG. 16 shows temperature graphs (A) and (B) for two batches. According to FIG. 16 (A), when the product wafer of the first batch is polysilicon, even when a product wafer at room temperature is inserted into the furnace at the time of boat-up, the temperature drop is small and there is no temperature overshoot. It can be seen that the temperature has been recovered.

On the other hand, according to FIG. 16B, when the product wafer of the second batch is metal, when the product wafer at room temperature is inserted into the furnace at the time of boat-up, the temperature drop becomes large, After the temperature overshoot increases, the temperature is recovered. This is a case where the adjustment of the PID constant is performed for the polysilicon, and when the product wafer is a metal, the adjustment made of the polysilicon is inappropriate.

FIG. 17 shows a process temperature graph when the PID constant used for each batch is selectively used by using the PID constant adjusted by polysilicon and the PID constant adjusted by metal with respect to FIG. I have. Since the PID constant is adjusted in advance in consideration of the metal film type,
It shows that the temperature recovery is performed well.

FIG. 18 shows an example in which the upper
3 shows the configuration of a wafer (input product) film type correspondence control table that can be edited. In one wafer film type correspondence control table (for example, name: Film — 1), ten arrangements of wafer film types and a lot correspondence PID table or a wafer number correspondence PID table name (the former in the figure) can be defined. When the film type defined in the input lot information is “1”, the lot-corresponding PID
This means that the table “LOT_PID_1” is used.

FIG. 19 shows a related diagram when the wafer film type correspondence control table is used. The process recipe 101A includes “Film — 1” 12 as a wafer film type correspondence control table.
1 is defined. Lot corresponding PID table 102
“Automatic” is defined as A. P corresponding to the number of wafers
The definition is that the ID table is not used. Both cannot be defined at the same time. This depends on the convenience of the customer, and it is possible to arbitrarily determine whether to use a lot or the number of product wafers. At the time of the process recipe RUN, for example, “Film_1” defined here is downloaded from the external storage device to the memory, and the default use table 103A is updated to “0: corresponding to lot”.

In the process recipe, temperature events "1" to "3" 104A are defined, and respective time 105A and temperature PID table number 106A are defined. For example, when the temperature event “1” starts, the temperature PID table number “1” is specified. For example, when the wafer film type, the number of lots, and the number of lots are sent as the lot information 107A from the host computer, if the default use table is “0: lot correspondence”, the number of lots in the lot information is As a result, calculation information of two lots is obtained.

For example, if the input lot is “lot A: 5” and “lot B: 15” as the lot information, the total number of lots is 2, and the total number is 20. And "Film
_1 ”is downloaded to the memory. The lot type PID table“ LOT_PID_1 ”corresponding to the film type defined in“ _1 ”is downloaded to the memory. Then, a temperature PID table corresponding to the number of lots defined in the lot correspondence PID table “LOT_PID_1” in the memory is found. In this case, "PI
D — 20 ”.

Then, this “PID_20” is downloaded to the temperature controller 25. The temperature controller 25 controls the temperature using the temperature PID table number of the downloaded temperature PID table, for example, the PID constant defined in “1”.

FIGS. 20 and 21 show flowcharts of the event switching monitoring process of the upper controller. this is,
20 is a flowchart of the description of FIG. First, when the event switching monitoring process is started in step S61, it is determined in step S62 whether or not there is a process recipe RUN instruction. It is determined whether there is a setting.

If it is determined in step S63 that there is a setting, the process proceeds to step S64, in which a film type correspondence control table of the recipe setting is searched. In step S65, it is determined whether or not a lot-corresponding PID table has been set. If it is determined that a lot-corresponding PID table has been set, the process proceeds to step S66, where the lot-corresponding PID table corresponding to the film type is read from the input lot information. A search is performed, and the process proceeds to step S72. In step S72, the number of lots is calculated from the input lot information, and in step S73, a PID table corresponding to the number of lots is downloaded to the temperature controller.

If it is determined in step S65 that the setting has not been made, the flow advances to step S67 to determine whether or not the PID table corresponding to the number of wafers has been set. If it is determined that the process has been performed, the process proceeds to step S68, and a PID table corresponding to the number of wafers corresponding to the film type is searched from the input lot information.
Proceed to step S77.

In step S77, the number of wafers is calculated from the input lot information. In step S78, a PID table corresponding to the number of wafers is downloaded to the temperature controller, and the process ends.

On the other hand, if it is determined in step S63 that there is no setting in the film type correspondence control table, the process proceeds to step S69, where it is determined whether or not there is a setting in the lot correspondence PID table. If it is determined that there is, the process proceeds to step S70, where the default use table is set to “0: lot correspondence”, and the process proceeds to step S70.
Proceeding to 71, a lot-corresponding PID table in the recipe settings is searched. Thereafter, the process proceeds to step S72 described above.

In step S69, the lot correspondence PI
If it is determined that there is no setting in the D table, the process proceeds to step S74. Here, it is determined whether or not there is a setting in the PID table corresponding to the number of wafers. If it is determined that there is a setting, the process proceeds to step S75. , The default use table is set to “1: corresponding to the number of wafers”, and step S7 is set.
At 6, the PID table corresponding to the number of wafers in the recipe setting is searched. Thereafter, the process proceeds to step S77 described above.

In step S74, when it is determined that there is no setting in the PID table, and in step S62
If it is determined that there is no RUN instruction in step, the process proceeds to step S79 and ends.

According to the second embodiment, not only the number of wafers, but also the type of product wafer film,
Since a mechanism for switching the temperature control method can be provided, even when different product wafer film types are processed for each batch of the same equipment, the optimum temperature control method can be selected according to that, and the temperature recovery performance is made uniform. You. As a result, the yield of product wafers is improved, and
The unit price of semiconductor products such as memories and CPU chips can be reduced. Conventionally, processing in which the type of the input wafer film is limited has been generally performed.
Even in the case of individual mass production such as a large lot, it can respond finely. In the second embodiment, the film type is considered together with the number of wafers. However, it goes without saying that the control may be switched only by the film type. Further, the temperature PID table and the temperature PID table number are separately set from the host controller 26,
Although they are provided to the temperature controller 25, both may be provided at the same time, for example, at the time of temperature control download.

[0082]

As is apparent from the above description, according to the present invention, there is provided a semiconductor manufacturing method and apparatus capable of obtaining optimum temperature control performance in accordance with the number of substrates to be processed such as wafers and the type of film. This has the effect that it can be obtained.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing an overall configuration of a semiconductor manufacturing apparatus according to an embodiment.

FIG. 2 is a block diagram showing a temperature controller.

FIG. 3 is a block diagram showing a host controller.

FIG. 4 is a sequence diagram showing one batch of process processing.

FIG. 5 is a graph showing a relationship between a conventional wafer quantity and a process temperature.

FIG. 6 is a graph showing a relationship between a wafer quantity and a process temperature according to the embodiment.

FIG. 7 is a diagram showing a PID table.

FIG. 8 is a diagram showing a lot correspondence PID table.

FIG. 9 is a diagram showing a PID table corresponding to the number of product wafers.

FIG. 10 is a diagram showing a flow of processing when a lot correspondence PID table is used.

FIG. 11 is a flowchart showing the processing of FIG. 10;

FIG. 12 is an interrupt flowchart in the temperature controller.

FIG. 13 is a main flowchart of a process in a temperature controller.

FIG. 14 is a flowchart of a host controller message reception process.

FIG. 15 is a main flowchart of a process of a host controller.

FIG. 16 is a graph showing a relationship between a conventional wafer film type and a process temperature.

FIG. 17 is a graph showing a relationship between a wafer film type and a process temperature according to the embodiment.

FIG. 18 is a diagram showing a wafer film type correspondence control table.

FIG. 19 is a diagram showing a flow of processing when a film type correspondence control table is used.

FIG. 20 is a flowchart showing the processing of FIG. 19;

FIG. 21 is a flowchart showing the processing of FIG. 20.

[Explanation of symbols]

25 Temperature controller 26 Host controller 103, 103A Default use table 102, 109, 102A, 109A Lot correspondence PI
D table 107, 107A Lot information 108, 108A Calculation lot information 121 Film type correspondence control table

Continued on the front page (72) Inventor Masaaki Ueno 3-14-20 Higashinakano, Nakano-ku, Tokyo Inside Kokusai Denki Co., Ltd. (72) Inventor Kazuhiro Yokogawa 3-14-20 Higashinakano, Nakano-ku, Tokyo Kokusai Electric Co. F term (reference) 4K030 CA04 DA09 FA10 JA20 KA23 KA41 LA12 LA15 5F045 AA06 DP19 EK27 GB04 GB05 GB16

Claims (5)

[Claims] 1. A semiconductor manufacturing method in which a substrate to be processed is placed in a heating furnace and subjected to heat treatment, wherein temperature control in the heat treatment is switched based on instruction information on the substrate to be treated. Semiconductor manufacturing method. 2. The semiconductor manufacturing method according to claim 1, wherein the instruction information includes a processing content applied to the substrate to be processed in a step before the heat treatment. 3. The semiconductor manufacturing method according to claim 1, wherein the instruction information includes the number of the substrates to be processed simultaneously in the heat treatment. 4. A semiconductor manufacturing apparatus using the semiconductor manufacturing method according to claim 1. 5. A semiconductor manufacturing apparatus for subjecting a substrate carried into a heating furnace to heat treatment using a control parameter, comprising: an input unit for inputting a film type and a quantity of the substrate to be processed; A film type correspondence control table storage unit storing a control table, and a quantity correspondence control parameter table storage unit corresponding to the film type correspondence table and storing a control parameter table corresponding to the number of substrates to be inputted. A search unit that searches the film type correspondence table and the quantity correspondence control parameter table based on the film type and the quantity input from the input unit, and determines a control parameter for heat treatment of the substrate to be processed. Semiconductor manufacturing equipment.