JPH10154652A - Substrate treating device - Google Patents

Substrate treating device

Info

Publication number
JPH10154652A
JPH10154652A JP8314586A JP31458696A JPH10154652A JP H10154652 A JPH10154652 A JP H10154652A JP 8314586 A JP8314586 A JP 8314586A JP 31458696 A JP31458696 A JP 31458696A JP H10154652 A JPH10154652 A JP H10154652A
Authority
JP
Japan
Prior art keywords
substrate
unit
processing
processing unit
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8314586A
Other languages
Japanese (ja)
Other versions
JP3450138B2 (en
Inventor
Kenichi Terauchi
健一 寺内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP31458696A priority Critical patent/JP3450138B2/en
Priority to KR1019970042707A priority patent/KR100292935B1/en
Publication of JPH10154652A publication Critical patent/JPH10154652A/en
Application granted granted Critical
Publication of JP3450138B2 publication Critical patent/JP3450138B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706Mechanical details, e.g. roller, belt

Abstract

PROBLEM TO BE SOLVED: To reduce the floor-space for a substrate treating device and to prevent contamination of the board then it is transported by an AGV. SOLUTION: At a substrate cleaning part 20, a substrate W1 which is supported almost horizontally and transported in the horizontal direction is supplied with cleaning agent. The cleaning agent supplied to the substrate W1 is the dried. At a resist coating and developing part 30, the substrate W1 is coated with resist and the resist after exposure is developed. The cleaning part 20 is provided with a substrate delivery part IF for receiving the substrate delivered between the cleaning part 20 and the resist coating and developing part 30. The cleaning part 20 is provided with a lifter 28 for storing the substrate W1 once, a transporting robot TR for delivering the substrate W1 between the cleaning part 20 and the resist locating and developing part 30 through the lifter 28.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、液晶表示器用ガラ
ス角型基板、半導体ウエハ等の基板に所定の処理を施す
基板処理装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for performing predetermined processing on substrates such as a glass square substrate for a liquid crystal display and a semiconductor wafer.

【0002】[0002]

【従来の技術】従来の基板処理装置の一つとして、基板
にレジスト塗布及び現像処理を施す塗布現像装置が、特
開平8−222616号公報に開示されている。
2. Description of the Related Art As one of conventional substrate processing apparatuses, a coating and developing apparatus for applying and developing a resist on a substrate is disclosed in JP-A-8-222616.

【0003】この塗布現像装置は、基板を所定の方向に
搬送する複数の搬送ロボットと、搬送ロボットの搬送路
に沿ってその一方側に設けられた処理部とを有してい
る。この処理部には、基板を洗浄処理するスピンスクラ
バと、基板上にレジストを塗布するスピンコータと、露
光機によって所定のパターンが焼き付けられた基板上の
レジスト膜を現像処理するスピンデベロッパとが設けら
れている。
This coating and developing apparatus has a plurality of transfer robots for transferring a substrate in a predetermined direction, and a processing section provided on one side along a transfer path of the transfer robot. The processing unit is provided with a spin scrubber for cleaning the substrate, a spin coater for applying a resist on the substrate, and a spin developer for developing the resist film on the substrate on which a predetermined pattern has been printed by an exposure machine. ing.

【0004】また、上述の塗布現像装置に設けられたス
ピンスクラバでは、基板サイズの大型化に十分対応でき
ないという問題があった。すなわち、例えば液晶表示器
の製造工場に基板を受け入れた際の基板表面の汚れや、
基板上に各種薄膜を形成した後に表面に付着する金属粉
や油脂汚れを十分に除去できず、さらに基板の裏面を十
分に洗浄できる構成となっていないため、上述の塗布現
像装置とは別に基板を洗浄する基板洗浄装置が必要とな
っていた。
Further, the spin scrubber provided in the above-mentioned coating and developing apparatus has a problem that it cannot sufficiently cope with an increase in the size of a substrate. That is, for example, contamination of the substrate surface when the substrate is received in a liquid crystal display manufacturing factory,
After the formation of various thin films on the substrate, it is not possible to sufficiently remove metal powder and oil stains adhering to the surface, and it is not configured to be able to sufficiently clean the back surface of the substrate. A substrate cleaning device for cleaning the substrate has been required.

【0005】この基板洗浄装置は、基板の搬送方向に沿
って並列された複数の搬送ローラと、複数の搬送ローラ
によって搬送される基板の表裏両面に向かって、アルカ
リ溶液等の薬液や、例えば特開平5−264942号公
報に開示されるような、高圧の純水又は超音波が付与さ
れた純水等を吹き付けて基板を洗浄するものである。ま
た、例えば、特開平7−6987号公報に開示されるよ
うに複数の搬送ローラによって搬送される基板の表裏両
面にロールブラシを当接させて基板を洗浄する基板洗浄
装置も知られている。
This substrate cleaning apparatus includes a plurality of transport rollers arranged in parallel along the transport direction of a substrate, and a chemical solution such as an alkaline solution or the like, for example, applied to both front and back surfaces of the substrate transported by the plurality of transport rollers. As disclosed in Japanese Unexamined Patent Publication No. 5-264942, the substrate is washed by spraying high-pressure pure water or pure water to which ultrasonic waves are applied. Further, for example, as disclosed in Japanese Patent Application Laid-Open No. 7-6987, there is also known a substrate cleaning apparatus for cleaning a substrate by bringing a roll brush into contact with both front and back surfaces of the substrate conveyed by a plurality of conveyance rollers.

【0006】上述の基板洗浄装置によって洗浄処理さ
れ、カセットに収納された基板は、AGVによって前述
の塗布現像装置に搬送され、レジスト塗布および現像処
理が施される。
The substrate that has been cleaned by the above-described substrate cleaning apparatus and stored in a cassette is transported by the AGV to the above-described coating and developing apparatus, where the resist is coated and developed.

【0007】また、基板の表面にITO(Indium Tin O
xide)膜等の電極膜を形成するプラズマCVD法やスパ
ッタリング法を用いた成膜処理の前処理としても、上述
の基板洗浄装置によって基板の洗浄処理が行われてお
り、上述と同様に洗浄処理された基板は、AGVによっ
てスパッタ装置やCVD装置等の成膜装置に搬送され成
膜処理が施される。
On the surface of the substrate, ITO (Indium Tin O
xide) As a pre-process of a film forming process using a plasma CVD method or a sputtering method for forming an electrode film such as a film, a substrate cleaning process is performed by the above-described substrate cleaning apparatus. The substrate is transported by an AGV to a film forming apparatus such as a sputtering apparatus or a CVD apparatus and subjected to a film forming process.

【0008】[0008]

【発明が解決しようとする課題】しかしながら、上述の
ように、例えば液晶表示器の製造工場の一つのフロアー
に、塗布現像装置、基板洗浄装置、成膜装置を別々に配
置し、各装置間においてAGVによってカセットに収納
された基板を搬送すると、フロアーにAGVの搬送路を
確保する必要があるとともに、各装置に、カセットと所
定の処理ユニットとの間で基板を受け渡しするインデク
サ部をそれぞれ設ける必要があるので、各処理装置が設
置される全フロアー面積が増大するという問題が発生す
る。
However, as described above, for example, a coating and developing device, a substrate cleaning device, and a film forming device are separately arranged on one floor of a liquid crystal display manufacturing factory, and When a substrate stored in a cassette is transported by the AGV, it is necessary to secure a transport path for the AGV on the floor, and it is necessary to provide each device with an indexer unit for transferring the substrate between the cassette and a predetermined processing unit. Therefore, there arises a problem that the total floor area on which each processing apparatus is installed increases.

【0009】さらに、AGVによってカセットに収納さ
れた基板を搬送する際に、カセット内の基板が汚染され
るという別の問題も発生する。
Further, when the substrates stored in the cassette are transported by the AGV, another problem occurs that the substrates in the cassette are contaminated.

【0010】本発明の目的は、上述のような点に鑑み、
各装置が設置されるフロアー面積を低減させるととも
に、AGVによる基板搬送時の基板の汚染を抑制した基
板処理装置を提供することにある。
[0010] The object of the present invention has been made in view of the above points,
An object of the present invention is to provide a substrate processing apparatus in which the floor area on which each apparatus is installed is reduced, and contamination of the substrate during transfer of the substrate by the AGV is suppressed.

【0011】[0011]

【課題を解決するための手段】上記課題を解決するた
め、請求項1の装置は、基板に所定の処理を施す基板処
理装置において、基板をほぼ水平に支持するとともにこ
の基板を所定の方向に搬送させつつ、この基板の主面に
洗浄液を供給する洗浄液供給手段と、この洗浄液供給手
段によって基板に供給された洗浄液を乾燥処理する乾燥
手段とを有する第1処理部と、基板の主面にレジストを
塗布する塗布ユニットを含む複数の処理ユニットを有す
る第2処理部と、第1処理部と第2処理部との間で、受
け渡しされる基板を一旦蓄積するバッファ手段と、この
バッファ手段を介して第1処理部と第2処理部との間で
基板を受け渡しする受渡手段とを有する基板受渡部と、
を備えたことを特徴とする。
According to a first aspect of the present invention, there is provided a substrate processing apparatus for performing a predetermined process on a substrate, wherein the substrate is supported substantially horizontally and the substrate is moved in a predetermined direction. A first processing unit having a cleaning liquid supply unit for supplying a cleaning liquid to the main surface of the substrate while being transported, and a drying unit for drying the cleaning liquid supplied to the substrate by the cleaning liquid supply unit; A second processing unit having a plurality of processing units including a coating unit for coating a resist, a buffer unit for temporarily storing a substrate to be transferred between the first processing unit and the second processing unit; A substrate delivery unit having delivery means for delivering a substrate between the first processing unit and the second processing unit via
It is characterized by having.

【0012】また、請求項2の装置は、第1処理部が、
複数の基板を基板の搬送行路に沿って並列に配置された
複数の搬送ローラによって連続的に搬送しつつその搬送
行路上の所定位置に洗浄液供給手段及び乾燥手段を配置
したローラ搬送方式の処理部であり、第2処理部が、複
数の処理ユニットのうちの任意の処理ユニットに基板を
搬送ロボットが所定の順序で逐次搬送して基板に一連の
処理を行うロボット逐次搬送方式の処理部であることを
特徴とする。
Further, in the apparatus according to the second aspect, the first processing unit includes:
A roller transport type processing unit in which a plurality of substrates are continuously transported by a plurality of transport rollers arranged in parallel along a substrate transport path and a cleaning liquid supply unit and a drying unit are arranged at predetermined positions on the transport path. Wherein the second processing unit is a processing unit of a robot sequential transfer system in which the transfer robot sequentially transfers the substrate to an arbitrary processing unit of the plurality of processing units in a predetermined order and performs a series of processing on the substrate. It is characterized by the following.

【0013】また、請求項3の装置は、複数の処理ユニ
ットの一つが、基板の主面に形成され、所定のパターン
が焼き付けられたレジスト膜を現像処理する現像ユニッ
トであることを特徴とする。
According to a third aspect of the present invention, one of the plurality of processing units is a developing unit for developing a resist film formed on the main surface of the substrate and having a predetermined pattern printed thereon. .

【0014】また、請求項4の装置は、基板に所定の処
理を施す基板処理装置において、基板をほぼ水平に支持
するとともにこの基板を所定の方向に搬送させつつ、こ
の基板の主面に洗浄液を供給する洗浄液供給手段と、こ
の洗浄液供給手段によって基板に供給された洗浄液を乾
燥処理する乾燥手段とを有する第1処理部と、基板の主
面に所定の電極膜を形成する成膜手段を有する第2処理
部と、第1処理部と第2処理部との間で、受け渡しされ
る基板を一旦蓄積するバッファ手段と、このバッファ手
段を介して第1処理部と第2処理部との間で基板を受け
渡しする受渡手段とを有する基板受渡部と、を備えたこ
とを特徴とする。
According to a fourth aspect of the present invention, there is provided a substrate processing apparatus for performing a predetermined processing on a substrate, wherein the cleaning liquid is applied to the main surface of the substrate while supporting the substrate substantially horizontally and transporting the substrate in a predetermined direction. A first processing unit having a cleaning liquid supply unit for supplying a liquid, a drying unit for drying the cleaning liquid supplied to the substrate by the cleaning liquid supply unit, and a film forming unit for forming a predetermined electrode film on the main surface of the substrate A second processing unit, a buffer means for temporarily storing a substrate to be transferred between the first processing unit and the second processing unit, and a first processing unit and a second processing unit via the buffer means. And a substrate delivery unit having delivery means for delivering the substrate between them.

【0015】また、請求項5の装置は、第1処理部が、
基板をほぼ水平に支持するとともにこの基板を所定の方
向に搬送させつつ、この基板の主面にブラシを当接させ
て基板を洗浄するブラシ洗浄手段を有することを特徴と
する。
[0015] In a fifth aspect of the present invention, the first processing unit comprises:
A brush cleaning means for supporting the substrate substantially horizontally and transporting the substrate in a predetermined direction while cleaning the substrate by bringing a brush into contact with the main surface of the substrate is provided.

【0016】また、請求項6の装置は、洗浄液供給手段
によって供給される洗浄液がアルカリ溶液であることを
特徴とする。
[0016] The apparatus according to claim 6 is characterized in that the cleaning liquid supplied by the cleaning liquid supply means is an alkaline solution.

【0017】[0017]

【発明の実施の形態】BEST MODE FOR CARRYING OUT THE INVENTION

〔第1実施形態〕図1は、本発明の実施形態に係る基板
処理装置の構造を示す。図1(a)は、基板処理装置の
平面図であり、図1(b)は、基板処理装置の正面図で
ある。
[First Embodiment] FIG. 1 shows a structure of a substrate processing apparatus according to an embodiment of the present invention. FIG. 1A is a plan view of the substrate processing apparatus, and FIG. 1B is a front view of the substrate processing apparatus.

【0018】図示のように、この基板処理装置は、AG
Vからカセット単位で搬送されてきた基板を受け入れて
後の連続処理のためにカセットから1枚ずつ基板を取り
出すインデクサ部10と、取り出された基板を所定の洗
浄液で洗浄するための第1処理部である洗浄部20と、
洗浄部20とレジスト塗布現象部30との間で受け渡さ
れる基板を一旦蓄積するとともに、洗浄部20とレジス
ト塗布現像部30との間で基板を受け渡す基板受渡部I
Fと、洗浄後の基板にレジスト塗布等の処理を行うため
の第2処理部であるレジスト塗布現像部30と、レジス
ト塗布後の基板に周辺露光を行うとともにこの基板をス
テッパ50に受け渡すインタフェース部40とを備え
る。
As shown in the figure, this substrate processing apparatus has an AG
An indexer unit 10 for receiving substrates transported in cassette units from the cassette V and removing substrates one by one from the cassette for subsequent continuous processing, and a first processing unit for cleaning the removed substrates with a predetermined cleaning liquid. A washing unit 20,
A substrate transfer section I for temporarily accumulating a substrate transferred between the cleaning section 20 and the resist coating section 30 and transferring a substrate between the cleaning section 20 and the resist coating and developing section 30.
F, a resist coating / developing unit 30 as a second processing unit for performing processing such as resist coating on the washed substrate, and an interface for performing peripheral exposure on the resist coated substrate and transferring the substrate to the stepper 50 And a unit 40.

【0019】インデクサ部10は、4つのカセットCA
のいずれかに収納された基板をインデクサロボットIN
Dにより一枚ずつ取り出して、後述する洗浄部20の基
板出入部21に基板を受け渡すとともに、洗浄処理、レ
ジスト塗布現像処理、露光処理がそれぞれ施され、洗浄
部20の基板出入部21にある基板を、インデクサロボ
ットINDにより受け取り、4つのカセットCAのいず
れかに収納するものである。
The indexer unit 10 includes four cassettes CA.
Indexer robot IN
D, the substrates are taken out one by one and transferred to a substrate entrance / exit portion 21 of a cleaning unit 20 described later, and a cleaning process, a resist coating / developing process, and an exposure process are performed. The substrate is received by the indexer robot IND and stored in one of the four cassettes CA.

【0020】洗浄部20は、レジスト塗布前の基板を水
平方向に順次搬送しながら一枚一枚連続的に洗浄するコ
ンベア方式の処理部分で、インデクサ部10との間で基
板をやり取りする基板出入部21と、受け入れた基板に
紫外線を照射するUV処理部22と、基板を水平姿勢か
ら基板の搬送方向に向かって左右方向に、水平面に対し
て傾斜角3゜から40゜の範囲内で傾斜して傾斜姿勢に
変位させる基板傾斜部23と、基板を傾斜姿勢で搬送し
つつ基板の上下表面に薬液処理を施す薬液洗浄部24
と、基板の上下表面を純水で洗浄する純水洗浄部25
と、水洗後の基板を乾燥させるエアーナイフ乾燥部26
とを備える。
The cleaning section 20 is a processing section of a conveyor system for successively cleaning the substrates before application of the resist in a horizontal direction one by one while continuously transferring the substrates to and from the indexer section 10. And a UV processing unit 22 for irradiating the received substrate with ultraviolet light, and tilting the substrate from a horizontal position in the horizontal direction toward the transport direction of the substrate within a tilt angle of 3 ° to 40 ° with respect to a horizontal plane. And a chemical cleaning section 24 for performing chemical processing on the upper and lower surfaces of the substrate while transporting the substrate in the inclined attitude.
And a pure water cleaning unit 25 for cleaning the upper and lower surfaces of the substrate with pure water.
And an air knife drying unit 26 for drying the washed substrate
And

【0021】受渡部IFは、エアーナイフ乾燥部26で
乾燥され、傾斜姿勢で搬送された基板を、傾斜姿勢から
水平姿勢に変位させた後、後述するバッファ部に一旦蓄
積する。そして、バッファ部に一旦蓄積した基板を、受
渡手段である搬送ロボットTRによって、レジスト塗布
現像部30の基板出入部TRP1に受け渡す。
The transfer section IF changes the substrate dried in the air knife drying section 26 and transported in the inclined position from the inclined position to the horizontal position, and then temporarily stores the substrate in a buffer section described later. Then, the substrate once accumulated in the buffer unit is transferred to the substrate entrance / exit portion TRP1 of the resist coating / developing unit 30 by the transfer robot TR serving as a transfer unit.

【0022】一方、インターフェース部40を介して、
ステッパ50で露光され、レジスト塗布現像部30で現
像処理が終了した基板は、基板出入部TRP1から、基
板受渡部IFの搬送ロボットTRを介してシャトル搬送
部29に渡される。このシャトル搬送部29は、基板を
搬送して基板出入部21まで移動させる。
On the other hand, via the interface unit 40,
The substrate exposed by the stepper 50 and developed by the resist coating and developing unit 30 is transferred from the substrate entrance / exit unit TRP1 to the shuttle transfer unit 29 via the transfer robot TR of the substrate transfer unit IF. The shuttle transport section 29 transports the substrate and moves it to the substrate entrance 21.

【0023】レジスト塗布現像部30は、搬送ロボット
が往復自在に移動して、複数の処理ユニットのうちの任
意の処理ユニットに基板を所定の順席で逐次搬送するロ
ボット逐次搬送方式の処理部であり、洗浄部20で洗浄
された基板にレジストを塗布して基板の主面にレジスト
膜を形成するとともに、ステッパ50で露光され所定の
パターンが焼き付けられたレジスト膜に現像処理を施す
ものである。レジスト塗布現像部30は、上記のような
一連の基板処理を施すため、水平方向に配列されるとと
もに互いに積層された複数の処理ユニットに分かれてお
り、処理対象である基板は、処理ユニットの配列されて
いる水平方向に沿って移動可能な複数の搬送手段である
搬送ロボットTR1〜TR3によって、各処理ユニット間
を所定の手順で循環的に搬送される。処理ユニットとし
て、下段側には、基板の主面(上側表面)にレジストを
塗布する塗布ユニットであるスピンコータSC、基板の
端面に塗布されたレジストを除去する端面洗浄ユニット
EBR、ステッパ50で所定のパターンが焼き付けられ
たレジスト膜を現像処理するための現像ユニットである
スピンデベロッパSD1〜SD3等が設けられている。ま
た、上段側には、基板に脱水乾燥処理を行うデハイドベ
ークユニットDB、基板へのレジスト塗布前に基板に対
するレジストの密着力を強化させる密着強化処理を行う
密着強化ユニットAP、レジスト乾燥のために熱処理を
行うソフトベークユニットSB、レジスト現像後の基板
を乾燥させるハードベークユニットHB、露光機50に
よって所定のパターンが焼き付けられたレジスト膜を有
する基板を乾燥処理する露光後ベークユニットPEB、
基板を冷却するクーリングプレートCP1〜CP4基板
を冷却するとともに、搬送ロボットTR1と搬送ロボッ
トTR2との間での基板の受け渡し部として機能するク
ーリングプレートIMC1、基板を冷却するとともに、
搬送ロボットTR2と搬送ロボットTR3との間での基
板の受け渡し部として機能するクーリングプレートIM
C2、が設けられている。
The resist coating / developing section 30 is a robot sequential transport type processing section in which a transport robot moves reciprocally, and sequentially transports the substrate to any one of a plurality of processing units in a predetermined order. In addition, a resist is applied to the substrate cleaned by the cleaning unit 20 to form a resist film on the main surface of the substrate, and a resist film exposed to a stepper 50 and printed with a predetermined pattern is subjected to a developing process. . The resist coating and developing unit 30 is divided into a plurality of processing units arranged in a horizontal direction and stacked on each other in order to perform a series of substrate processing as described above. The transport units TR1 to TR3, which are a plurality of transport units that can move along the horizontal direction, cyclically transport between the processing units in a predetermined procedure. As a processing unit, a spin coater SC which is a coating unit for coating a resist on the main surface (upper surface) of the substrate, an end surface cleaning unit EBR for removing the resist coated on the end surface of the substrate, and a stepper 50 are provided on the lower side. There are provided spin developers SD1 to SD3, which are development units for developing the resist film on which the pattern has been printed. Further, on the upper side, a dehydration bake unit DB for performing dehydration and drying processing on the substrate, an adhesion strengthening unit AP for performing an adhesion strengthening processing for enhancing the adhesion of the resist to the substrate before applying the resist to the substrate, A soft bake unit SB for performing a heat treatment on the substrate, a hard bake unit HB for drying the substrate after development of the resist, a post-exposure bake unit PEB for drying a substrate having a resist film on which a predetermined pattern is baked by the exposure device 50,
Cooling plates CP1 to CP4 for cooling the substrates While cooling the substrates, the cooling plates IMC1 functioning as a substrate transfer unit between the transfer robot TR1 and the transfer robot TR2, and cooling the substrates;
Cooling plate IM functioning as a substrate transfer section between transfer robot TR2 and transfer robot TR3
C2 is provided.

【0024】図2は、洗浄部20の構造をより詳細に示
す斜視図である。基板出入部21では、インデクサ部1
0のカセットCAからインデクサロボットINDによっ
て一枚ずつ取り出された基板W1を受け取る。ここで受
け取られた基板W1は、複数の搬送ローラ(図示せず)
で支持されて水平に順次搬送され、UV処理部22まで
移動する。UV処理部22では、基板W1表面に紫外線
照射を照射して基板W1表面の油脂成分等を灰化させ
る。紫外線処理された基板W1は、複数の搬送ローラ
(図示せず)を利用した水平搬送によって直進した後、
そのままの姿勢で直交方向に進行方向を変更し、基板傾
斜部23まで水平移動する。この基板傾斜部23では、
後の洗浄処理の便宜のために、姿勢変位機構(図示せ
ず)によって水平姿勢の基板W1を基板の搬送方向に向
って左右方向に、水平面に対する傾斜角3゜〜40゜の
範囲で傾斜させた傾斜姿勢に搬送ローラRとともに変位
させる。これは、基板W1上に供給された洗浄液に一方
向への流れを形成して、基板W1上の洗浄液の置換やパ
ーティクルの除去を効率化するためである。薬液洗浄部
24では、基板傾斜部23から傾いたままで後述する複
数の搬送ローラR上を搬送されてきた基板W1の表面に
アルカリ溶液を供給して薬液洗浄を行う。純水洗浄部2
5では、傾斜姿勢で搬送ローラR上を搬送されてきた基
板W1の表面に純水を供給して純水洗浄を行う。エアー
ナイフ乾燥部26では、基板W1の表面に付着した純水
を清浄化された加圧空気で液切りすることによって基板
W1を乾燥させる。
FIG. 2 is a perspective view showing the structure of the cleaning section 20 in more detail. In the substrate entrance 21, the indexer 1
The substrate W1 taken out one by one by the indexer robot IND from the cassette CA of No. 0 is received. The substrate W1 received here is transported by a plurality of transport rollers (not shown).
And is conveyed horizontally sequentially and moved to the UV processing unit 22. In the UV processing unit 22, the surface of the substrate W1 is irradiated with ultraviolet rays to ash the fat and oil components on the surface of the substrate W1. After the substrate W1 that has been subjected to the ultraviolet treatment is moved straight by horizontal conveyance using a plurality of conveyance rollers (not shown),
The traveling direction is changed in the orthogonal direction with the posture as it is, and the substrate is horizontally moved to the substrate inclined portion 23. In the substrate inclined portion 23,
For the sake of convenience of the subsequent cleaning process, the substrate W1 in the horizontal posture is tilted in the horizontal direction in the range of 3 ° to 40 ° with respect to the horizontal plane by the posture displacement mechanism (not shown) toward the transport direction of the substrate. With the conveyance roller R to the inclined position. This is to form a one-way flow in the cleaning liquid supplied on the substrate W1, and to efficiently replace the cleaning liquid on the substrate W1 and remove particles. In the chemical cleaning section 24, the alkaline liquid is supplied to the surface of the substrate W1 transported on a plurality of transport rollers R, which will be described later, while being inclined from the substrate inclined section 23, to perform the chemical cleaning. Pure water cleaning part 2
In step 5, pure water is supplied to the surface of the substrate W1 transported on the transport roller R in an inclined posture to perform pure water cleaning. In the air knife drying unit 26, the substrate W1 is dried by draining pure water adhering to the surface of the substrate W1 with purified pressurized air.

【0025】図3は、薬液洗浄部24、純水洗浄部25
及びエアーナイフ乾燥部26における処理の概要をより
詳細に説明する模式図である。複数の搬送ローラRは、
基板の進行方向に沿って並列に配置され、基板を一枚ず
つ傾斜姿勢で保持するとともに、前述の基板傾斜部2
3、薬液洗浄部24、純水洗浄部25、エアーナイフ乾
燥部26、後述する基板受渡部IFの基板取出部27に
順次、複数の基板を搬送するものである。ブラシ洗浄手
段である薬液洗浄部24では、基板傾斜部23側から搬
送されてきた基板W1の表面に第1の洗浄液供給手段で
あるノズル124からのアルカリ溶液が供給され、ロー
ルブラシ224によって基板W1の上下面の油脂成分等
が除去される。次に、純水洗浄部25では、第2の洗浄
液供給手段である純水ノズル125から吐出される純水
のカーテンによって基板W1の上下面のアルカリ溶液等
が流される。さらに、基板W1は、第3の洗浄液供給手
段である高圧ノズル225からの高圧の洗浄水によって
高圧スプレー洗浄され、第4の洗浄液供給手段である超
音波洗浄装置325から超音波振動を与えた洗浄水を供
給することによってさらに洗浄される。最後に、乾燥手
段であるエアーナイフ乾燥部26では、ノズル126か
らの加圧空気によって基板W1の上下表面の液切りが行
われる。
FIG. 3 shows a chemical cleaning section 24 and a pure water cleaning section 25.
FIG. 4 is a schematic diagram for explaining an outline of a process in an air knife drying unit 26 in more detail. The plurality of transport rollers R
The substrates are arranged in parallel along the traveling direction of the substrates, hold the substrates one by one in an inclined posture, and
3. A plurality of substrates are sequentially transported to a chemical solution cleaning unit 24, a pure water cleaning unit 25, an air knife drying unit 26, and a substrate removal unit 27 of a substrate delivery unit IF described later. In the chemical cleaning unit 24, which is a brush cleaning unit, an alkali solution is supplied from a nozzle 124, which is a first cleaning liquid supply unit, to the surface of the substrate W1 conveyed from the substrate inclined unit 23 side. Oil components on the upper and lower surfaces are removed. Next, in the pure water cleaning section 25, an alkaline solution or the like on the upper and lower surfaces of the substrate W1 is caused to flow by a curtain of pure water discharged from a pure water nozzle 125 as a second cleaning liquid supply unit. Further, the substrate W1 is subjected to high-pressure spray cleaning with high-pressure cleaning water from a high-pressure nozzle 225 as a third cleaning liquid supply unit, and cleaning with ultrasonic vibration applied from an ultrasonic cleaning device 325 as a fourth cleaning liquid supply unit. It is further washed by supplying water. Lastly, in the air knife drying section 26 serving as a drying unit, liquid is removed from the upper and lower surfaces of the substrate W1 by pressurized air from the nozzle 126.

【0026】再び、図2に戻って、エアーナイフ乾燥部
26を経て乾燥された基板W1は、傾斜姿勢のままで複
数の搬送ローラRによって基板受渡部IFの基板取出部
27に搬送される。基板取出部27に搬送された基板W
1は、複数の搬送ローラRとともに、姿勢変位機構(図
示せず)によって傾斜姿勢から水平姿勢に変位される。
そして、水平姿勢に変位した基板W1は、フォーク状の
リフタ28に保持されて上方の退避位置まで移動する。
Returning to FIG. 2 again, the substrate W1 dried through the air knife drying unit 26 is transported by the plurality of transport rollers R to the substrate unloading unit 27 of the substrate delivery unit IF while maintaining the inclined posture. Substrate W conveyed to substrate unloading section 27
1 is displaced from an inclined posture to a horizontal posture by a posture displacement mechanism (not shown) together with a plurality of transport rollers R.
Then, the substrate W1 displaced to the horizontal posture is held by the fork-shaped lifter 28 and moves to the upper evacuation position.

【0027】図4は、洗浄部20又はレジスト塗布現像
部30における基板W1の処理時間(処理タクト)と搬
送ロボットTRの搬送タイミングとの差を調整するため
のバッファ手段であるリフタ28の構造を示す図であ
る。このリフタ28の本体部分228からは、一対の支
持棒128、128が基板の搬送行路上に延びている。
各支持棒128には、基板W1を支持するための複数の
ツメ128aが設けられている。各支持棒128は、本
体部分228内部に設けた駆動機構(図示せず)によっ
て、それぞれ同時に上下動するとともに、同時かつ互い
に反対方向に回転可能となっている。各支持棒128に
設けたツメ128aを互いに離間する方向に回転させた
開状態とすると、各支持棒128は基板取出部27に設
けられた複数の搬送ローラRに水平姿勢で保持された基
板W1に干渉されることなく上下動可能となる。一方、
各支持棒128に設けたツメ128aを互いに近づく方
向に回転させた開状態とすると、ツメ128aの先端が
基板W1の両端を下面側から支持できるので、基板W1は
一対の支持棒128に保持されて上下動可能となる。
FIG. 4 shows the structure of the lifter 28 as a buffer means for adjusting the difference between the processing time (processing tact) of the substrate W1 in the cleaning unit 20 or the resist coating and developing unit 30 and the transfer timing of the transfer robot TR. FIG. From the main body 228 of the lifter 28, a pair of support rods 128, 128 extend on the substrate transport path.
Each support bar 128 is provided with a plurality of claws 128a for supporting the substrate W1. Each support rod 128 is simultaneously moved up and down by a drive mechanism (not shown) provided inside the main body portion 228, and is simultaneously rotatable in opposite directions. When the claws 128a provided on the support rods 128 are opened in a state of being rotated in a direction away from each other, the support rods 128 are held by a plurality of transport rollers R provided on the substrate take-out portion 27 in a horizontal posture. It can be moved up and down without being interfered with. on the other hand,
When the claws 128a provided on the respective support rods 128 are opened in a state of being rotated in a direction approaching each other, the ends of the claws 128a can support both ends of the substrate W1 from the lower surface side. Can be moved up and down.

【0028】動作について説明すると、基板W1は、複
数の搬送ローラRによって、傾斜姿勢で保持されつつエ
アーナイフ乾燥部26から基板取出部27まで搬送され
た後、静止させられる。次に基板W1は、姿勢変位機構
(図示せず)により搬送ローラとともに水平姿勢に変位
させられる。このとき、一対の支持棒128は、搬送ロ
ーラRの上方の退避位置に退避している。そして、一対
の支持棒128は、水平姿勢にある基板W1の両端の高
さ位置(搬送位置)まで、ツメ128aを開状態にして
下降する。搬送位置まで下降した一対の支持棒128
は、それぞれ回転してツメ128aを開状態とし、ツメ
128aの先端を基板W1の両端の下主面に当接させた
後、退避位置まで上昇して、基板W1の両端を下主面か
らツメ128aで支持しつつ、基板W1を退避位置まで
搬送する。
In operation, the substrate W1 is transported from the air knife drying section 26 to the substrate take-out section 27 while being held in an inclined position by a plurality of transport rollers R, and then stopped. Next, the substrate W1 is displaced to a horizontal posture together with the transport roller by a posture displacing mechanism (not shown). At this time, the pair of support bars 128 are retracted to the retracted position above the transport roller R. Then, the pair of support rods 128 are lowered with the claws 128a in the open state to the height position (transport position) at both ends of the substrate W1 in the horizontal posture. A pair of support rods 128 lowered to the transport position
Are rotated to open the claws 128a, and the tips of the claws 128a are brought into contact with the lower main surfaces of both ends of the substrate W1, then raised to the retracted position, and the ends of the substrate W1 are claws from the lower main surfaces. The substrate W1 is transported to the retreat position while being supported by 128a.

【0029】図2に戻って、基板受渡部IFに設けられ
た搬送ロボットTRは、案内レール(図示せず)に沿っ
て、基板取出部27に対して進退するように図2のY方
向に沿って往復運動するロボット本体72と、ロボット
本体72に対して伸縮、回転及び昇降する多関節型のア
ーム71と、基板W1を下主面から保持するハンド70
とを有している。この搬送ロボットTRによって、基板
取出部27の退避位置で一対の支持棒128により支持
された基板W1を、レジスト塗布現像部30に設けられ
た基板出入部TRP1に搬送する。具体的に説明する
と、まず、ロボット本体72は、基板取出部27の直前
まで前進した後、アーム71を伸ばしてハンド70を、
退避位置で支持棒128により支持された基板W1の下
方に挿入する。次にアーム71を上昇させてハンド70
により基板W1を支持棒128から受け取った後、アー
ム71を縮める。そして、ハンド70で基板W1を保持
した状態でロボット本体72は基板出入部TRP1の直
前まで後退した後、アーム71を図2のX方向に沿って
伸ばしつつ回転させて、基板W1とともにハンド70を
基板出入部TRP1に設けられた基板受台(図示せず)
の上方に挿入する。次にアーム71を下降させて基板W
1を基板受台に受け渡す。このように、基板出入部TR
P1の基板受台に搬送された基板W1は、レジスト塗布
現像部30に設けられた搬送ロボットTR1(図1)に
よって、レジスト塗布現像部30の所定の処理ユニッ
ト、例えばデハイドベークDBに搬送される。
Returning to FIG. 2, the transfer robot TR provided in the board transfer section IF moves along the guide rail (not shown) in the Y direction of FIG. A robot body 72 that reciprocates along the axis, an articulated arm 71 that expands, contracts, rotates, and moves up and down with respect to the robot body 72, and a hand 70 that holds the substrate W1 from the lower main surface.
And The transport robot TR transports the substrate W1 supported by the pair of support rods 128 at the retreat position of the substrate unloading unit 27 to the substrate entrance TRP1 provided in the resist coating and developing unit 30. Specifically, first, the robot main body 72 advances to a position immediately before the substrate take-out section 27, and then extends the arm 71 to move the hand 70,
It is inserted below the substrate W1 supported by the support rod 128 at the retracted position. Next, the arm 71 is raised and the hand 70
After receiving the substrate W1 from the support rod 128, the arm 71 is contracted. Then, after holding the substrate W1 with the hand 70, the robot main body 72 retreats to just before the substrate entrance TRP1, and then rotates the arm 71 while extending it in the X direction of FIG. Substrate support (not shown) provided at substrate entrance TRP1
Insert above. Next, the arm 71 is lowered and the substrate W
1 is transferred to the board receiving table. Thus, the substrate entrance TR
The substrate W1 transported to the substrate receiving table of P1 is transported to a predetermined processing unit of the resist coating and developing unit 30, for example, a dehydration bake DB, by a transport robot TR1 (FIG. 1) provided in the resist coating and developing unit 30.

【0030】上述のように洗浄部20により洗浄処理を
終えた基板W1を、搬送ロボットTRに受け渡す前に、
支持棒128により一時的に保持することにより、基板
W1を一旦蓄積することができる。すなわち、搬送ロボ
ットTRが基板W1を搬送している途中であっても、次
の基板(W2とする)は、支持棒128に保持されてい
るので、さらに次の基板(W3とする)を基板取出部2
7に受け入れることが可能となり、洗浄部20の連続的
な洗浄処理を中断することなく、基板(W1、W2、W
3、…)を洗浄部20からレジスト塗布現像部30へ連
続して搬送することができる。
Before transferring the substrate W1 having been subjected to the cleaning process by the cleaning unit 20 to the transfer robot TR,
By temporarily holding the substrate W1 by the support rod 128, the substrate W1 can be temporarily stored. That is, even while the transfer robot TR is transferring the substrate W1, the next substrate (referred to as W2) is held by the support rod 128, so that the next substrate (referred to as W3) is further transferred. Extraction unit 2
7, the substrate (W1, W2, W2) can be received without interrupting the continuous cleaning process of the cleaning unit 20.
3,...) Can be conveyed continuously from the cleaning unit 20 to the resist coating and developing unit 30.

【0031】また、支持棒128の退避位置の上方に
は、複数の基板、例えば20枚程度を収納可能なバッフ
ァカセットBCA(図2)が設けられている。このバッ
ファカセットBCAは、洗浄部20において一枚の基板
を洗浄処理する時間(処理タクト)が、洗浄部20より
後工程である例えば、レジスト塗布現像部30部におけ
る処理タクトとよりも小さくその差が大きい場合や、洗
浄部20より後工程である例えばレジスト塗布現像部3
0に故障が生じ、その処理が中断している場合に用いら
れるものである。具体的に説明すると、上述のように処
理タクトの差が大きい場合などは、基板受渡部IFの搬
送ロボットTRが保持している基板W1より前に洗浄処
理された基板(W0とする)がレジスト塗布現像部30
の基板出入部TRP1の基板受台からレジスト塗布現像
部30の搬送ロボットTRによって受け取られずに停滞
し、基板受渡部IFの搬送ロボットTRは、基板W1を
基板出入部TRP1に受け渡せない。このような場合、
搬送ロボットTRは、その保持する基板W1をバッファ
カセットBCAに収納した後、基板出入部TRP1の基
板W0が搬送ロボットTR1によって搬送されるまで、順
次、支持棒128に保持された基板(W2、W3…)を受
け取ってバッファカセットBCAに収納する。
Above the retracted position of the support rod 128, a buffer cassette BCA (FIG. 2) capable of storing a plurality of substrates, for example, about 20 substrates, is provided. In the buffer cassette BCA, the time (processing tact) for cleaning one substrate in the cleaning unit 20 is smaller than the processing tact in, for example, the resist coating and developing unit 30 which is a process subsequent to the cleaning unit 20. Is large, or the resist coating and developing unit 3 which is a process after the cleaning unit 20 is used.
0 is used when a failure occurs and its processing is interrupted. More specifically, in the case where the difference in the processing tact is large as described above, for example, the substrate (W0) cleaned before the substrate W1 held by the transfer robot TR of the substrate transfer unit IF is subjected to the resist. Coating and developing unit 30
The transfer robot TR of the substrate transfer section IF cannot stay and receive the substrate W1 from the substrate receiving table of the substrate transfer section TRP1 without being received by the transfer robot TR of the resist coating and developing section 30. In such a case,
The transfer robot TR stores the substrate W1 held therein in the buffer cassette BCA, and then sequentially transfers the substrates (W2, W3) held on the support rod 128 until the substrate W0 of the substrate entrance TRP1 is transferred by the transfer robot TR1. ..) Are received and stored in the buffer cassette BCA.

【0032】基板出入部TRP1の基板W0が搬送ロボ
ットTR1によって搬送されると、搬送ロボットTR
は、バッファカセットBCAから基板W0の次の基板W1
を取り出して、基板出入部TRP1に搬送する。そし
て、搬送ロボットTRは、順次、基板(W2、W3…)を
バッファカセットBCAから基板出入部TRP1へ、い
わゆるFIFO(ファーストイン・ファーストアウト)
方式で搬送する。
When the transfer robot TR1 transfers the substrate W0 of the substrate entrance TRP1, the transfer robot TR1
Is the substrate W1 next to the substrate W0 from the buffer cassette BCA.
Is taken out and transported to the substrate entrance TRP1. Then, the transfer robot TR sequentially transfers the substrates (W2, W3...) From the buffer cassette BCA to the substrate entrance TRP1, so-called FIFO (first-in first-out).
Convey by method.

【0033】上述のように、洗浄部20で洗浄処理を終
えた基板を順次、バッファカセットBCAに収納するこ
とにより、基板出入部TRP1に基板が停滞していて
も、洗浄部20における洗浄処理を途中で中断すること
を防止できて、以下のような問題を解決することができ
る。すなわち、洗浄部20において洗浄処理を途中で中
断すると、搬送ローラ20による基板の搬送を停止する
こととなり、例えば、薬液洗浄部24において、過剰な
アルカリ溶液が基板の一部分に供給されるとともに、所
定の時間よりも長く、ロールブラシ24によって基板の
一部分のみが洗浄されることとなるので、洗浄処理の中
断が解消された後に、洗浄処理を終えた基板に洗浄ムラ
や傷が発生するという問題が生じる。この問題を解決す
るために、インデクサ部10から洗浄部20への基板の
供給を一時的に停止する方法も考えられるが、この方法
では、例えばレジスト塗布現像装置30の予測できない
故障に対応できないし、洗浄部20における洗浄処理を
中断することになるので、基板の処理能力が低下すると
いった別の問題が発生する。
As described above, the substrates that have been subjected to the cleaning process in the cleaning unit 20 are sequentially stored in the buffer cassette BCA, so that the cleaning process in the cleaning unit 20 can be performed even if the substrate is stagnant in the substrate entrance TRP1. Interruption on the way can be prevented, and the following problems can be solved. That is, if the cleaning process is interrupted in the cleaning unit 20, the transport of the substrate by the transport roller 20 is stopped. For example, in the chemical solution cleaning unit 24, an excess alkali solution is supplied to a part of the substrate, and Since the roll brush 24 cleans only a part of the substrate for a longer period of time, after the interruption of the cleaning process is eliminated, there is a problem that unevenness and scratches occur on the substrate after the cleaning process. Occurs. In order to solve this problem, a method of temporarily stopping the supply of the substrate from the indexer unit 10 to the cleaning unit 20 may be considered. However, this method cannot cope with an unexpected failure of the resist coating and developing apparatus 30, for example. In addition, since the cleaning process in the cleaning unit 20 is interrupted, another problem such as a reduction in substrate processing capability occurs.

【0034】一方、レジスト塗布現像部30で現像処理
を終了した基板WZは、基板出入部TRP1から、洗浄
部20側の搬送ロボットTRを介してシャトル搬送部2
9に受け渡される。具体的には、搬送ロボットTRが基
板出入部TRP1からの処理済みの基板WZを受け取っ
て、この基板をシャトル搬送部29の一端に設けたター
ンテーブル129上に移載する。基板W2は、ターンテ
ーブル129に真空吸着により保持されてこれとともに
90゜回転し、インデクサ部10への受け渡しが可能な
向きになる。この状態でターンテーブル129が上昇
し、基板WZは、スライドハンド229に受け渡され
る。具体的には、スライドハンド229をターンテーブ
ル129の位置まで移動させると、スライドハンド22
9の本体直下に基板WZが相対的に移動する。この状態
で、ターンテーブル129を降下させ吸着状態を解除せ
せると、スライドハンド229両端に設けたフック22
9a、229aに基板WZが保持される。基板WZを保持
したスライドハンド229は、シャトル搬送部29の長
手方向(図2の−X方向)に沿って移動し、基板WZを
基板出入部21まで移動させる。基板出入部21まで移
動させられた基板WZは、インデクサ部10側に設けた
搬送ロボットINDに受け渡される。搬送ロボットIN
Dは、搬送ロボットTRと同一構造を有し基板WZを4
つのカセットCAのいずれかに収納する。
On the other hand, the substrate WZ which has been subjected to the development processing in the resist coating / developing section 30 is transferred from the substrate entrance / exit section TRP1 to the shuttle transport section 2 via the transport robot TR on the cleaning section 20 side.
9 Specifically, the transfer robot TR receives the processed substrate WZ from the substrate loading / unloading section TRP1, and transfers the substrate onto the turntable 129 provided at one end of the shuttle transfer section 29. The substrate W2 is held on the turntable 129 by vacuum suction and rotates by 90 ° with it, so that the substrate W2 can be transferred to the indexer unit 10. In this state, the turntable 129 is raised, and the substrate WZ is transferred to the slide hand 229. Specifically, when the slide hand 229 is moved to the position of the turntable 129, the slide hand 22
The substrate WZ relatively moves directly below the main body 9. In this state, when the turntable 129 is lowered to release the suction state, the hooks 22 provided at both ends of the slide hand 229 are provided.
The substrate WZ is held by 9a and 229a. The slide hand 229 holding the substrate WZ moves along the longitudinal direction of the shuttle transport unit 29 (the -X direction in FIG. 2), and moves the substrate WZ to the substrate entrance 21. The substrate WZ that has been moved to the substrate entrance 21 is transferred to the transfer robot IND provided on the indexer unit 10 side. Transfer robot IN
D has the same structure as the transfer robot TR and has four substrates WZ.
Stored in one of the two cassettes CA.

【0035】〔第2実施形態〕第1実施形態の基板処理
装置の変形として、図2に示すような洗浄部20を成膜
装置の前段に配置した基板処理装置とすることも可能で
ある。
[Second Embodiment] As a modification of the substrate processing apparatus of the first embodiment, a substrate processing apparatus in which a cleaning unit 20 as shown in FIG.

【0036】図5は、第2実施形態に係る成膜用の基板
処理装置の構成を示すブロック図である。この基板処理
装置は、図1と同一構造のインデクサ部10と、図1と
同一構造の洗浄部20と、例えば洗浄後の液晶用ガラス
基板に電極膜を形成するための第2処理部であるプラズ
マCVD法やスパッタリング法を用いた成膜部90とを
備える。成膜部90には、基板にITO等の金属膜を形
成する成膜用チャンバ91と、基板出入部TRP1で受
け入れた基板を成膜用チャンバ91まで搬送する搬送ロ
ボットTR4とを備える。動作について簡単に説明する
と、インデクサ部10でカセットから取り出された基板
は、洗浄部20側に受け渡され、UV処理部22で紫外
線照射処理がなされ、基板傾斜部23を経て、薬液洗浄
部24で薬液洗浄が行われ、純水洗浄部25で純水洗浄
が行われる。基板は、乾燥後に基板受渡部IFに設けた
搬送ロボットTRによって、成膜部90に設けた基板出
入部TRP1に搬送される。基板出入部TRP1で受け
入れた基板は、搬送ロボットTR4によって、成膜用チ
ャンバ91まで搬送されて成膜用チャンバ91内で成膜
処理が行われる。成膜用チャンバ91から取り出された
成膜後の基板は、搬送ロボットTR4によって、基板出
入部TRP1まで搬送される。基板出入部TRP1に移
された成膜後の基板は、搬送ロボットTRによって、シ
ャトル搬送部29の一端に移載され、このシャトル搬送
部29を搬送されて、インデクサ部10においてカセッ
ト中に収容される。
FIG. 5 is a block diagram showing a configuration of a substrate processing apparatus for film formation according to the second embodiment. This substrate processing apparatus is an indexer unit 10 having the same structure as in FIG. 1, a cleaning unit 20 having the same structure as in FIG. 1, and a second processing unit for forming an electrode film on, for example, a liquid crystal glass substrate after cleaning. A film forming unit 90 using a plasma CVD method or a sputtering method. The film forming section 90 includes a film forming chamber 91 for forming a metal film such as ITO on a substrate, and a transfer robot TR4 for transferring the substrate received at the substrate entrance TRP1 to the film forming chamber 91. The operation will be briefly described. The substrate taken out of the cassette by the indexer unit 10 is transferred to the cleaning unit 20 side, subjected to ultraviolet irradiation by the UV processing unit 22, passed through the substrate inclined unit 23, and then passed through the chemical cleaning unit 24. Is performed, and the pure water cleaning section 25 performs pure water cleaning. After the substrate is dried, the substrate is transferred to a substrate entrance TRP1 provided in the film forming unit 90 by a transfer robot TR provided in the substrate transfer unit IF. The substrate received at the substrate entrance TRP1 is transported by the transport robot TR4 to the deposition chamber 91, where the deposition process is performed. The film-deposited substrate taken out of the film-forming chamber 91 is transferred to the substrate entrance TRP1 by the transfer robot TR4. The substrate after film formation transferred to the substrate entrance TRP1 is transferred to one end of the shuttle transfer unit 29 by the transfer robot TR, transferred through the shuttle transfer unit 29, and stored in the cassette in the indexer unit 10. You.

【0037】以上、実施形態に即してこの発明を説明し
たが、この発明は上記実施形態に限定されるものではな
い。例えば、洗浄部20の構成は自由であり、UV処理
部22や薬液洗浄部24は必ずしも設ける必要がない。
また、純水洗浄部25の構成も自由である。
Although the present invention has been described with reference to the embodiment, the present invention is not limited to the above embodiment. For example, the configuration of the cleaning unit 20 is free, and the UV processing unit 22 and the chemical liquid cleaning unit 24 do not always need to be provided.
Further, the configuration of the pure water cleaning unit 25 is also free.

【0038】また、洗浄部20において基板W1を複数
の搬送ローラRによって搬送する際の基板の姿勢は、傾
斜姿勢ではなく水平姿勢とすることもできる。尚、本発
明におけるほぼ水平に支持された基板とは、上述の水平
姿勢(水平面に対する傾斜角0゜)から傾斜姿勢(水平
面に対する傾斜角3゜から40゜の範囲)の範囲内で支
持された基板のことである。
Further, when the substrate W1 is carried by the plurality of carrying rollers R in the cleaning section 20, the posture of the substrate may be a horizontal posture instead of an inclined posture. Note that the substantially horizontally supported substrate in the present invention is supported within the range of the above-described horizontal posture (inclination angle with respect to the horizontal plane of 0 °) to the inclination posture (with a inclination angle of 3 ° to 40 ° with respect to the horizontal plane). It is a substrate.

【0039】また、エアーナイフ乾燥部26の代わりに
スピンドライ装置を配置することも可能である。
It is also possible to dispose a spin dryer instead of the air knife dryer 26.

【0040】また、シャトル搬送部29も不可欠ではな
く、搬送ロボットTRによって基板出入部TRP1から
基板出入部21まで基板を移送することもできる。
Further, the shuttle transfer section 29 is not indispensable, and the transfer robot TR can transfer the substrate from the substrate input / output section TRP1 to the substrate input / output section 21.

【0041】また、第2実施形態で、レジスト塗布現像
部30の配置構成も自由であり、搬送ロボットの数も必
要に応じて適宜変更可能である。
In the second embodiment, the arrangement of the resist coating / developing unit 30 is also free, and the number of transfer robots can be changed as needed.

【0042】また、第1実施形態で、レジスト塗布現像
部30を利用する処理は不可欠でなく、洗浄部20のみ
を利用する処理を行わせることもできる。この場合、イ
ンデクサ部10でカセットから取り出された基板は、洗
浄部20側に受け渡され、紫外線照射処理、薬液洗浄、
純水洗浄等が行われる。洗浄後の基板は、乾燥後に基板
受渡部IFに設けた搬送ロボットTRによって、シャト
ル搬送部29の一端に移載され、このシャトル搬送部2
9を搬送されて、インデクサ部10においてカセット内
に収容される。
In the first embodiment, the process using the resist coating and developing unit 30 is not essential, and the process using only the cleaning unit 20 can be performed. In this case, the substrate taken out of the cassette by the indexer unit 10 is transferred to the cleaning unit 20 side, and is subjected to ultraviolet irradiation processing, chemical cleaning,
Pure water washing and the like are performed. The washed substrate is transferred to one end of the shuttle transport unit 29 by the transport robot TR provided in the substrate transfer unit IF after drying, and the shuttle transport unit 2
9 is conveyed and stored in a cassette at the indexer section 10.

【0043】[0043]

【発明の効果】以上の説明のように、請求項1の装置で
は、基板をほぼ水平に支持するとともにこの基板を所定
の方向に搬送させつつ、この基板の主面に洗浄液を供給
する洗浄液供給手段と、この洗浄液供給手段によって基
板に供給された洗浄液を乾燥処理する乾燥手段とを有す
る第1処理部と、基板の主面にレジストを塗布する塗布
ユニットを含む複数の処理ユニットを有する第2処理部
と、第1処理部と第2処理部との間で、受け渡しされる
基板を一旦蓄積するバッファ手段と、このバッファ手段
を介して第1処理部と第2処理部との間で基板を受け渡
しする受渡手段とを有する基板受渡部とを備えるので、
洗浄のための第1処理部とレジスト塗布のための第2処
理部とのそれぞれに基板をカセットから出し入れするた
めの専用のインデクサ部を設ける必要がなく、このよう
なインデクサ部間でAGVによってカセットを搬送する
必要もない。よって、装置が設置されるフロアー面積を
低減させることができるとともに、AGVによる基板搬
送の際の基板の汚染を抑制することができる。
As described above, in the apparatus according to the first aspect, the cleaning liquid supply for supplying the cleaning liquid to the main surface of the substrate while supporting the substrate substantially horizontally and transporting the substrate in a predetermined direction. A first processing unit having means for drying the cleaning liquid supplied to the substrate by the cleaning liquid supply means, and a second processing unit having a plurality of processing units including a coating unit for coating a resist on the main surface of the substrate. A processing unit, buffer means for temporarily storing a substrate to be transferred between the first processing unit and the second processing unit, and a substrate between the first processing unit and the second processing unit via the buffer means. And a board delivery unit having delivery means for delivering
There is no need to provide a dedicated indexer unit for taking substrates in and out of the cassette in each of the first processing unit for cleaning and the second processing unit for resist coating, and the AGV uses a cassette between such indexer units. There is no need to transport Therefore, the floor area on which the apparatus is installed can be reduced, and the contamination of the substrate when the substrate is transported by the AGV can be suppressed.

【0044】また、請求項2の装置では、第1処理部
が、ローラ搬送方式の処理部であり、第2処理部が、ロ
ボット逐次搬送方式の処理部であるので、第1処理部か
ら第2処理部への基板の受け渡しタイミングの調整が不
可欠であるが、基板の受け渡しにバッファ手段を介在さ
せることにより、基板の受け渡しが確実かつ効率良いも
のとなる。
In the apparatus according to the second aspect, the first processing unit is a processing unit of a roller transport system, and the second processing unit is a processing unit of a robot sequential transportation system. Adjustment of the timing of transferring the substrate to the two processing units is indispensable, but by interposing the buffer means in the transfer of the substrate, the transfer of the substrate becomes reliable and efficient.

【0045】また、請求項3の装置では、複数の処理ユ
ニットの一つが、基板の主面に形成され、所定のパター
ンが焼き付けられたレジスト膜を現像処理する現像ユニ
ットであるので、第1処理部と第2処理部とレジスト露
光機とを直列に配置し、一つのインデクサ部のみで基板
の洗浄、レジスト塗布及びその現像処理が可能となり、
フロアー面積を効果的に減少させることができる。
In the apparatus according to the third aspect, one of the plurality of processing units is a developing unit for developing a resist film formed on the main surface of the substrate and having a predetermined pattern printed thereon. Section, the second processing section and the resist exposure machine are arranged in series, and the substrate can be washed, resist coated and developed by only one indexer section,
The floor area can be effectively reduced.

【0046】また、請求項4の装置では、基板をほぼ水
平に支持するとともにこの基板を所定の方向に搬送させ
つつ、この基板の主面に洗浄液を供給する洗浄液供給手
段と、この洗浄液供給手段によって基板に供給された洗
浄液を乾燥処理する乾燥手段とを有する第1処理部と、
基板の主面に所定の電極膜を形成する成膜手段を有する
第2処理部と、第1処理部と第2処理部との間で、受け
渡しされる基板を一旦蓄積するバッファ手段と、このバ
ッファ手段を介して第1処理部と第2処理部との間で基
板を受け渡しする受渡手段とを有する基板受渡部とを備
えるので、洗浄のための第1処理部と成膜のための第2
処理部のそれぞれに基板をカセットから出し入れするた
めのインデクサ部を設ける必要がなく、装置設置のため
のフロアー面積を低減させることができるとともに、A
GVによる基板搬送の際の基板の汚染を抑制することが
できる。
Further, in the apparatus according to the fourth aspect, the cleaning liquid supply means for supplying the cleaning liquid to the main surface of the substrate while supporting the substrate substantially horizontally and transporting the substrate in a predetermined direction, and the cleaning liquid supply means A first processing unit having drying means for drying the cleaning liquid supplied to the substrate by
A second processing unit having a film forming unit for forming a predetermined electrode film on the main surface of the substrate; a buffer unit for temporarily storing a substrate to be transferred between the first processing unit and the second processing unit; Since there is provided a substrate transfer unit having a transfer unit that transfers a substrate between the first processing unit and the second processing unit via the buffer unit, the first processing unit for cleaning and the first processing unit for film formation are provided. 2
It is not necessary to provide an indexer unit for loading and unloading the substrate from the cassette in each of the processing units, so that the floor area for installing the apparatus can be reduced, and
It is possible to suppress contamination of the substrate when the substrate is transferred by the GV.

【0047】また、請求項5の装置では、第1処理部
が、基板をほぼ水平に支持するとともにこの基板を所定
の方向に搬送させつつ、この基板の主面にブラシを当接
させて基板を洗浄するブラシ洗浄手段を有するので、基
板の主面に強固に付着した汚染物質を効果的に除去でき
る。
In the apparatus according to the fifth aspect, the first processing section supports the substrate substantially horizontally and transports the substrate in a predetermined direction, while bringing the brush into contact with the main surface of the substrate, and Is provided, the contaminant firmly attached to the main surface of the substrate can be effectively removed.

【0048】また、請求項6の装置では、洗浄液供給手
段によって供給される洗浄液がアルカリ溶液であるの
で、基板の主面に付着した有機物質等の除去の効率を高
めることができる。
In the apparatus according to the sixth aspect, since the cleaning liquid supplied by the cleaning liquid supply means is an alkaline solution, the efficiency of removing organic substances and the like adhered to the main surface of the substrate can be improved.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 第1実施形態に係る基板処理装置の平面図及
び正面図である。
FIG. 1 is a plan view and a front view of a substrate processing apparatus according to a first embodiment.

【図2】 図1の基板処理装置の洗浄部をより詳細に説
明する斜視図である。
FIG. 2 is a perspective view illustrating a cleaning unit of the substrate processing apparatus of FIG. 1 in more detail.

【図3】 図2の洗浄部での洗浄処理工程の一部を模式
的に説明する図である。
FIG. 3 is a diagram schematically illustrating a part of a cleaning process in a cleaning unit of FIG. 2;

【図4】 図2の洗浄部に設けたリフタの動作等を説明
する図である。
FIG. 4 is a view for explaining the operation and the like of a lifter provided in the cleaning unit of FIG. 2;

【図5】 第2実施形態に係る基板処理装置の平面構造
を説明するための模式図である。
FIG. 5 is a schematic diagram for explaining a planar structure of a substrate processing apparatus according to a second embodiment.

【符号の説明】[Explanation of symbols]

10 インデクサ部 20 洗浄部 21 基板出入部 22 UV処理部 23 基板傾斜部 24 薬液洗浄部 25 純水洗浄部 26 エアーナイフ乾燥部 28 リフタ 29 シャトル搬送部 30 レジスト塗布現像部 40 インタフェース部 50 ステッパ IF 基板受渡部 TR,TR1〜TR4 搬送ロボット DESCRIPTION OF SYMBOLS 10 Indexer part 20 Cleaning part 21 Substrate in / out part 22 UV processing part 23 Substrate inclination part 24 Chemical liquid cleaning part 25 Pure water cleaning part 26 Air knife drying part 28 Lifter 29 Shuttle conveyance part 30 Resist coating and developing part 40 Interface part 50 Stepper IF substrate Delivery unit TR, TR1-TR4 Transfer robot

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI H01L 21/30 569D ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 21/30 569D

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 基板に所定の処理を施す基板処理装置に
おいて、 前記基板をほぼ水平に支持するとともに当該基板を所定
の方向に搬送させつつ、当該基板の主面に洗浄液を供給
する洗浄液供給手段と、当該洗浄液供給手段によって前
記基板に供給された前記洗浄液を乾燥処理する乾燥手段
とを有する第1処理部と、 前記基板の主面にレジストを塗布する塗布ユニットを含
む複数の処理ユニットを有する第2処理部と、 前記第1処理部と前記第2処理部との間で、受け渡しさ
れる前記基板を一旦蓄積するバッファ手段と、当該バッ
ファ手段を介して前記第1処理部と前記第2処理部との
間で前記基板を受け渡しする受渡手段とを有する基板受
渡部と、を備えたことを特徴とする基板処理装置。
1. A substrate processing apparatus for performing a predetermined process on a substrate, comprising: a cleaning liquid supply unit that supplies the cleaning liquid to a main surface of the substrate while supporting the substrate substantially horizontally and transporting the substrate in a predetermined direction. A first processing unit having a drying unit configured to dry the cleaning liquid supplied to the substrate by the cleaning liquid supply unit; and a plurality of processing units including a coating unit for coating a resist on a main surface of the substrate. A second processing unit; a buffer unit for temporarily storing the substrate transferred between the first processing unit and the second processing unit; and the first processing unit and the second processing unit via the buffer unit. A substrate delivery unit having delivery means for delivering the substrate to and from a processing unit.
【請求項2】前記第1処理部が、複数の前記基板を基板
の搬送行路に沿って並列に配置された複数の搬送ローラ
によって連続的に搬送しつつその搬送行路上の所定位置
に前記洗浄液供給手段及び前記乾燥手段を配置したロー
ラ搬送方式の処理部であり、前記第2処理部が、前記複
数の処理ユニットのうちの任意の処理ユニットに前記基
板を搬送ロボットが所定の順序で逐次搬送して前記基板
に一連の処理を行うロボット逐次搬送方式の処理部であ
ることを特徴とする請求項1に記載の基板処理装置。
A first processing section for continuously transporting the plurality of substrates by a plurality of transport rollers arranged in parallel along the transport path of the substrate, and at the predetermined position on the transport path; A roller transport type processing unit in which a supply unit and the drying unit are arranged, wherein the second processing unit sequentially transports the substrate to an arbitrary processing unit of the plurality of processing units by a robot in a predetermined order. 2. The substrate processing apparatus according to claim 1, wherein the processing unit is a robot sequential transfer type processing unit that performs a series of processing on the substrate.
【請求項3】 前記複数の処理ユニットの一つが、前記
基板の主面に形成され、所定のパターンが焼き付けられ
たレジスト膜を現像処理する現像ユニットであることを
特徴とする請求項1又は請求項2に記載の基板処理装
置。
3. The developing unit according to claim 1, wherein one of the plurality of processing units is a developing unit configured to develop a resist film formed on a main surface of the substrate and having a predetermined pattern printed thereon. Item 3. A substrate processing apparatus according to item 2.
【請求項4】 基板に所定の処理を施す基板処理装置に
おいて、 前記基板をほぼ水平に支持するとともに当該基板を所定
の方向に搬送させつつ、当該基板の主面に洗浄液を供給
する洗浄液供給手段と、当該洗浄液供給手段によって前
記基板に供給された前記洗浄液を乾燥処理する乾燥手段
とを有する第1処理部と、 基板の主面に所定の電極膜を形成する成膜手段を有する
第2処理部と、 前記第1処理部と前記第2処理部との間で、受け渡しさ
れる前記基板を一旦蓄積するバッファ手段と、当該バッ
ファ手段を介して前記第1処理部と前記第2処理部との
間で前記基板を受け渡しする受渡手段とを有する基板受
渡部と、を備えたことを特徴とする基板処理装置。
4. A substrate processing apparatus for performing predetermined processing on a substrate, comprising: a cleaning liquid supply unit that supplies the cleaning liquid to the main surface of the substrate while supporting the substrate substantially horizontally and transporting the substrate in a predetermined direction. A first processing unit having a drying unit for drying the cleaning liquid supplied to the substrate by the cleaning liquid supply unit; and a second processing unit having a film forming unit for forming a predetermined electrode film on the main surface of the substrate. A buffer unit for temporarily storing the substrate transferred between the first processing unit and the second processing unit; and the first processing unit and the second processing unit via the buffer unit. A substrate delivery unit having delivery means for delivering the substrate between the substrate processing apparatus.
【請求項5】 前記第1処理部が、前記基板をほぼ水平
に支持するとともに当該基板を所定の方向に搬送させつ
つ、当該基板の主面にブラシを当接させて基板を洗浄す
るブラシ洗浄手段を有することを特徴とする請求項1か
ら請求項4のいずれかに記載の基板処理装置。
5. A brush cleaning apparatus, wherein the first processing unit supports the substrate substantially horizontally and transports the substrate in a predetermined direction, and abuts a brush on a main surface of the substrate to clean the substrate. The substrate processing apparatus according to any one of claims 1 to 4, further comprising means.
【請求項6】 前記洗浄液供給手段によって供給される
前記洗浄液がアルカリ溶液であることを特徴とする請求
項1から請求項5のいずれかに記載の基板処理装置。
6. The substrate processing apparatus according to claim 1, wherein the cleaning liquid supplied by the cleaning liquid supply unit is an alkaline solution.
JP31458696A 1996-11-26 1996-11-26 Substrate processing equipment Expired - Lifetime JP3450138B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP31458696A JP3450138B2 (en) 1996-11-26 1996-11-26 Substrate processing equipment
KR1019970042707A KR100292935B1 (en) 1996-11-26 1997-08-29 Substrate processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31458696A JP3450138B2 (en) 1996-11-26 1996-11-26 Substrate processing equipment

Publications (2)

Publication Number Publication Date
JPH10154652A true JPH10154652A (en) 1998-06-09
JP3450138B2 JP3450138B2 (en) 2003-09-22

Family

ID=18055085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31458696A Expired - Lifetime JP3450138B2 (en) 1996-11-26 1996-11-26 Substrate processing equipment

Country Status (2)

Country Link
JP (1) JP3450138B2 (en)
KR (1) KR100292935B1 (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002167038A (en) * 2000-11-30 2002-06-11 Ishikawajima Harima Heavy Ind Co Ltd Board transfer device
JP2002289501A (en) * 2001-03-27 2002-10-04 Tokyo Electron Ltd Processor
JP2002318545A (en) * 2001-04-20 2002-10-31 Sony Corp Manufacturing method and manufacturing apparatus for display panel
JP2002324741A (en) * 2001-04-24 2002-11-08 Tokyo Electron Ltd Treatment equipment
JP2002329661A (en) * 2001-04-27 2002-11-15 Yoshitake Ito Substrate processing device and method therefor, and method for manufacturing substrate
JP2005142590A (en) * 2005-01-28 2005-06-02 Yoshitake Ito Substrate processing device and method, and method for manufacturing substrate
JP2007238266A (en) * 2006-03-08 2007-09-20 Shibaura Mechatronics Corp Substrate delivery device
JP2008053738A (en) * 2007-09-04 2008-03-06 Yoshitake Ito Substrate processing device, method for processing substrate, and method for manufacturing substrate
JP2008078681A (en) * 2001-03-09 2008-04-03 Tokyo Electron Ltd Treatment device
JP2008109158A (en) * 2007-12-28 2008-05-08 Yoshitake Ito Substrate treatment apparatus, substrate treatment method, substrate producing method and electronic device
JP2008124482A (en) * 2007-11-27 2008-05-29 Tokyo Electron Ltd Processor
JP2008124502A (en) * 2008-02-01 2008-05-29 Yoshitake Ito Substrate treatment equipment, method for treating substrate, method for manufacturing substrate, and electronic instrument
JP2008166820A (en) * 2007-12-28 2008-07-17 Yoshitake Ito Apparatus and method for processing substrate, method for manufacturing substrate, and electronic instrument
JP2010051901A (en) * 2008-08-28 2010-03-11 Shibaura Mechatronics Corp Apparatus and method of treating substrate
JP2011077152A (en) * 2009-09-29 2011-04-14 Dainippon Screen Mfg Co Ltd Substrate processing apparatus
JP2012186325A (en) * 2011-03-07 2012-09-27 Zebiosu:Kk Substrate processing apparatus with non-contact floating conveyance function
CN116631923A (en) * 2022-02-18 2023-08-22 株式会社斯库林集团 Substrate processing apparatus and substrate processing method

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3725051B2 (en) * 2001-07-27 2005-12-07 大日本スクリーン製造株式会社 Substrate processing equipment
JP2006024643A (en) * 2004-07-06 2006-01-26 Dainippon Screen Mfg Co Ltd Substrate treatment device
KR100819497B1 (en) * 2007-04-02 2008-04-07 뉴영엠테크 주식회사 Modular apparatus for cleaning a substrate

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3113411B2 (en) * 1992-03-18 2000-11-27 東京エレクトロン株式会社 Cleaning equipment
JPH07235468A (en) * 1994-02-22 1995-09-05 Toshiba Corp Resist coater

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002167038A (en) * 2000-11-30 2002-06-11 Ishikawajima Harima Heavy Ind Co Ltd Board transfer device
JP2008078681A (en) * 2001-03-09 2008-04-03 Tokyo Electron Ltd Treatment device
JP2002289501A (en) * 2001-03-27 2002-10-04 Tokyo Electron Ltd Processor
JP4619562B2 (en) * 2001-03-27 2011-01-26 東京エレクトロン株式会社 Processing equipment
JP2002318545A (en) * 2001-04-20 2002-10-31 Sony Corp Manufacturing method and manufacturing apparatus for display panel
JP2002324741A (en) * 2001-04-24 2002-11-08 Tokyo Electron Ltd Treatment equipment
JP2002329661A (en) * 2001-04-27 2002-11-15 Yoshitake Ito Substrate processing device and method therefor, and method for manufacturing substrate
JP2005142590A (en) * 2005-01-28 2005-06-02 Yoshitake Ito Substrate processing device and method, and method for manufacturing substrate
JP2007238266A (en) * 2006-03-08 2007-09-20 Shibaura Mechatronics Corp Substrate delivery device
JP2008053738A (en) * 2007-09-04 2008-03-06 Yoshitake Ito Substrate processing device, method for processing substrate, and method for manufacturing substrate
JP2008124482A (en) * 2007-11-27 2008-05-29 Tokyo Electron Ltd Processor
JP4643630B2 (en) * 2007-11-27 2011-03-02 東京エレクトロン株式会社 Processing equipment
JP2008109158A (en) * 2007-12-28 2008-05-08 Yoshitake Ito Substrate treatment apparatus, substrate treatment method, substrate producing method and electronic device
JP2008166820A (en) * 2007-12-28 2008-07-17 Yoshitake Ito Apparatus and method for processing substrate, method for manufacturing substrate, and electronic instrument
JP2008124502A (en) * 2008-02-01 2008-05-29 Yoshitake Ito Substrate treatment equipment, method for treating substrate, method for manufacturing substrate, and electronic instrument
JP2010051901A (en) * 2008-08-28 2010-03-11 Shibaura Mechatronics Corp Apparatus and method of treating substrate
JP2011077152A (en) * 2009-09-29 2011-04-14 Dainippon Screen Mfg Co Ltd Substrate processing apparatus
JP2012186325A (en) * 2011-03-07 2012-09-27 Zebiosu:Kk Substrate processing apparatus with non-contact floating conveyance function
CN116631923A (en) * 2022-02-18 2023-08-22 株式会社斯库林集团 Substrate processing apparatus and substrate processing method

Also Published As

Publication number Publication date
KR100292935B1 (en) 2001-10-24
KR19980041844A (en) 1998-08-17
JP3450138B2 (en) 2003-09-22

Similar Documents

Publication Publication Date Title
JP3450138B2 (en) Substrate processing equipment
JP4410121B2 (en) Coating and developing apparatus and coating and developing method
US8286293B2 (en) Substrate cleaning device and substrate processing apparatus including the same
JP4398786B2 (en) Coating method and coating apparatus
JP4476133B2 (en) Processing system
KR100493988B1 (en) Resist processing method and resist processing apparatus
JPH10316242A (en) Substrate conveying device and method
JP2007173368A (en) Application processor and application processing method
JP3442686B2 (en) Substrate processing equipment
JP3441321B2 (en) Substrate processing method and apparatus
JP2003209075A (en) System and control method for polishing wafer edge
JPH11330037A (en) Apparatus for processing substrate
JPH08139153A (en) Single wafer processing system, wafer transfer system and cassette
JP2000031106A (en) Substrate treating device
JP4924187B2 (en) Developing device, developing method and coating, developing device, and storage medium
JP3766177B2 (en) Substrate processing apparatus and substrate cleaning apparatus
JPH08293534A (en) Conveying device for material to be treated
JP2000049206A (en) Substrate treating apparatus
JP5758509B2 (en) Substrate processing method and substrate processing apparatus
JP3346823B2 (en) Substrate wet processing equipment
JP2003303762A (en) Apparatus and method for treating substrate
JP7262594B2 (en) Coating and developing equipment
JP2000124288A (en) Board carrying method and board carrier
JP2000334399A (en) Substrate treating apparatus
JP4050180B2 (en) Substrate processing method

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080711

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080711

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090711

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090711

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090711

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100711

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100711

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100711

Year of fee payment: 7