JP2000334399A - Substrate treating apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent the drying of particles such as polishing dust adherent to the surface of a substrate after processing treatment such as CMP treatment and to improve a cleaning effect in a cleaning part. SOLUTION: A substrate treating apparatus 100 for cleaning a wafer W is provided with treatment parts 30, 40, 50 for cleaning the wafer W which was CMP treated by a CMP apparatus 200, a mounting part 20 for mounting the wafer W temporarily before the wafer W is conveyed to the treatment part 30, and a shuttle-conveying robot 60 for conveying the wafer W from the mounting part 20 to the treatment pat 30, and the mounting part 20 has a pin for supporting the back of the wafer W, the first nozzle for supplying pure water to the surface of the wafer W supported by the pin, and the second nozzle for supplying pure water to the back of the wafer W.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for performing a predetermined process such as a cleaning process on a substrate such as a semiconductor wafer, a glass substrate for a liquid crystal display, and a glass substrate for a photomask.

[0002]

2. Description of the Related Art Conventionally, in the process of processing a wafer which is a kind of substrate, the surface of the wafer is removed by using a chemical polishing agent or a pad or the like in order to remove irregularities due to a multilayer structure formed on the surface of the wafer. CMP (Chemical Me) for planarizing the surface of the wafer by mechanically shaving it
(chemical polishing) processing.

[0003] Since polishing debris and the like adhere to the surface of the wafer subjected to the CMP process by polishing, a process of cleaning the wafer and removing the polishing debris and the like is performed as a process for the wafer after the CMP process.

FIG. 12 is a schematic block diagram of a conventional substrate processing apparatus for cleaning a wafer after such a CMP process. The conventional substrate processing apparatus 410 includes the loader 31
0, the unloader 390, and the plurality of processing units 330, 350,
370 and a plurality of transfer robots 320, 340, 360,
380.

[0005] First, the processing unit 330 brushes both sides of the wafer using a front brush for cleaning the front surface of the wafer and a back brush for cleaning the back surface of the wafer, thereby removing polishing debris and the like adhered to the wafer by the CMP process. (A double-sided cleaning process). Next, the processing unit 3
In step 50, a process of removing fine particles adhering to the surface of the wafer using a brush having a higher particle removal capability (surface cleaning process) is performed. In these processing units 330 and 350, a predetermined processing liquid is also discharged onto the front or back surface of the wafer in order to enhance the cleaning effect by the brush. Further, in the processing section 370, after performing the final rinsing of the wafer using a rinsing liquid such as pure water, the wafer is rotated at a high speed to perform spin dry drying (rinse processing / drying processing).

The transfer robot 320 takes out the wafer from the cassette 311 provided in the loader 310 and transfers the wafer to the processing section 330. Transfer robot 340
Takes out the wafer after the double-sided cleaning process in the processing unit 330, and transports the wafer to the processing unit 350. The transfer robot 360 takes out the wafer on which the surface cleaning processing has been completed in the processing unit 350 and transfers the wafer to the processing unit 370. Further, the transfer robot 380 performs a final rinsing process in the processing unit 370, takes out the dried wafer, and stores the wafer in the cassette 391 provided in the unloader 390.

[0007] Such a conventional substrate processing apparatus 410 includes:
As shown in FIG. 13, it is inline with the CMP apparatus 200. This substrate processing apparatus 410 is a CMP apparatus 2
Since the wafer cannot be directly transferred to and from the conveyor 00, a conveyor 420 for transferring the wafer is provided.
An indexer 430 for unloading a wafer to the CMP apparatus 200 is connected to the conveyor 420. Then, the wafer unloaded from the indexer 430 is transported to the CMP apparatus 200 via the conveyor 420, and the wafer after the CMP processing in the CMP apparatus 200 is transported again to the loader 310 of the substrate processing apparatus 410 via the conveyor 420. And the substrate processing apparatus 4
At 10, a wafer cleaning process is performed.

[0008]

However, in the conventional substrate processing apparatus 410, after the CMP processing is performed by the CMP apparatus 200, the cleaning is performed by the processing unit 330 via the conveyor 420 and the loader 310. Because
The polishing debris and the like attached to the wafer by the CMP process are dried and attached. Due to this, the processing units 330 and 35
There is a problem that the cleaning effect at 0,370 is reduced.

The present invention has been made in view of the above circumstances, and prevents drying of particles of polishing dust adhered to the front and back surfaces of a processed substrate, and enhances the cleaning effect in a cleaning unit. It is an object to provide a substrate processing apparatus.

[0010]

In order to achieve the above object, the present invention provides a substrate processing apparatus for performing a predetermined process on a substrate, comprising a cleaning unit for cleaning a substrate having a processed surface. Prior to transporting the substrate to the cleaning unit, a mounting unit for temporarily mounting the substrate, and a transport unit for transporting the substrate from the mounting unit to the cleaning unit, wherein the mounting unit, the substrate Supporting means for supporting, first processing liquid supplying means for supplying a processing liquid to the surface of the substrate supported by the supporting means, and second processing liquid for supplying the processing liquid to the back surface of the substrate supported by the supporting means Supply means. Note that the processing here may include a polishing process such as a CMP process for polishing the surface of the substrate on which the thin film is formed, and in this case, the drying of the polishing debris attached to the front and back surfaces of the substrate is prevented. . The supporting of the substrate by the supporting means may be supporting the back surface of the substrate or holding the outer peripheral edge of the substrate.
Further, the treatment liquid mentioned here includes pure water.

Further, the present invention is characterized in that a flow rate adjusting means for adjusting a flow rate of the processing liquid supplied from the second processing liquid supply means is provided. Further, the invention is characterized in that the flow rate adjusting means adjusts the flow rate of the processing liquid supplied from the first processing liquid supply means. Also, the present invention
The flow rate adjusting means is an electromagnetic valve.
In this case, the second processing liquid supply means and the first processing liquid supply means communicate with a processing liquid supply source via a supply pipe, and a configuration in which an electromagnetic valve is provided in this supply pipe can be considered. .

Further, the present invention is characterized in that the second processing liquid supply means includes a plurality of nozzles arranged concentrically. Further, in the present invention, the cleaning unit has a first cleaning tool for cleaning the surface of the substrate by contacting the surface of the substrate, and a second cleaning tool for cleaning the surface of the substrate by contacting the back surface of the substrate. And a double-sided cleaning unit for cleaning the front and back surfaces of the substrate, wherein the transport unit transports the substrate from the placement unit to the double-sided cleaning unit.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a substrate processing apparatus according to the present invention will be described below with reference to the drawings.

FIG. 1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view in the YZ plane of the substrate processing apparatus according to the embodiment of the present invention. FIG. 3 is a schematic cross-sectional view in the ZX plane of the substrate processing according to the embodiment of the present invention.

In the substrate processing apparatus 100, a pod (POD) 9 for accommodating a plurality of wafers W, which is a kind of substrate, is used as a container, and a plurality of wafers W to be subjected to the CMP process are sealed in the pod 9. It is arranged in the substrate storage part 7 in the state where it was set. A plurality of pods 9 are arranged in a row in the X-axis direction in the substrate storage unit 7. Note that a wafer cassette may be used instead of the pod 9.

Further, a plurality of processing units 30, 40, 50 corresponding to a cleaning unit of the present invention are provided with a transfer path 15 provided along the X-axis direction between the substrate storage unit 7 and the substrate storage unit 7. I have. These processing units 30, 40, and 50 are also arranged in a line along the X-axis direction, and are provided adjacent to each other according to the processing procedure for the wafer W.

As shown in FIG. 3, the processing unit 30 disposed at one end of the plurality of processing units is configured to support the surface of the wafer W with the support member 33 supporting the wafer W immediately after the completion of the CMP processing. The CMP process is performed by brushing both surfaces of the wafer W using a front brush 31 that cleans the front surface of the wafer W by contacting with the back surface and a back brush 32 that cleans the back surface of the wafer W by contacting the back surface of the wafer W. This is a processing unit for performing processing for removing particles such as polishing debris attached to the wafer W. In the processing unit 30, a predetermined processing liquid such as an alkaline liquid is supplied to the front surface and the rear surface of the wafer W by a nozzle (not shown) in order to enhance a cleaning effect by the front brush 31 and the back brush 32. The processing unit 30 corresponds to a double-sided cleaning processing unit of the present invention.

The processing section 40 is a processing section (surface processing section) for removing fine particles adhering to the surface of the wafer W by using a brush 41 having a higher particle removing ability. In the processing unit 40, in order to enhance the cleaning effect of the brush 41, a predetermined processing liquid can be discharged from the nozzle 43 to the surface of the wafer W, and the rotating unit 42 rotates while holding the wafer W. Is also possible.

Further, of the plurality of processing units, the processing unit 50 arranged on the other end side is mounted so that the wafer W can be rotated on the rotating unit 52, and the nozzle 5 is rotated while rotating the wafer W.
Then, a final rinse of the wafer W is performed by discharging a rinsing liquid such as pure water toward the surface of the wafer W from step 3, and then the discharge of the rinsing liquid is stopped, and the wafer W is rotated at a high speed. Processing unit that performs drying (rinse processing /
Drying processing section).

The transport path 15 and the processing units 30, 40, 5
Above 0 or the like, a filter fan unit FFU is provided to keep the atmosphere inside the substrate processing apparatus 100 clean. And the fan filter unit FF
From U, a downflow of clean air is formed toward the transport path 15 and the processing units 30, 40, 50 and the like.

In this substrate processing apparatus 100, as shown in FIG.
It is configured as an interface portion with the device 200, and the mounting portion 20 is provided in this portion. Mounting part 2
In FIG. 3, two transfer positions La and Lb are set in the vertical direction as shown in FIG. 3 as positions at which the wafer W can be transferred to and from the transfer unit 210 provided in the CMP apparatus 200. Have been.

The transfer position Lb is a position where the wafer W is temporarily placed when transferring the wafer W to the CMP apparatus 200. Then, the transfer arm (not shown) of the transfer unit 210 of the CMP apparatus 200 moves the transfer position L of the mounting unit 20.
b, the transfer arm transfers the wafer W to C
The wafer is transported to the MP apparatus 200 side, and a predetermined polishing process is performed in the CMP apparatus 200.

The transfer position La is set at the time when the transfer arm of the transfer section 210 of the CMP apparatus 200 transfers the wafer W after the CMP process to the substrate processing apparatus 100.
This is the position where is once placed. The transfer arm of the transfer unit 210 of the CMP apparatus 200 accesses the transfer position La of the mounting unit 20, and mounts the wafer W on which the CMP process has been completed.

A transfer robot 15 movable along the X-axis direction is provided on a transfer path 15 provided between the processing units 30, 40, 50 and the like and the mounting unit 20 and the substrate storage unit 7.
0 is provided. The transfer robot 10 is provided with two transfer arms 11 in a vertical direction, and transfers the wafer W while the transfer arm 11 holds the wafer W. As shown in FIG. 2, a ball screw 13 provided in the X-axis direction is screwed into the base portion 14. The rotation of the ball screw 13 causes the transfer robot 10 to rotate.
Are movable along the X-axis direction. In addition, the transfer robot 10 can transfer the wafer W also in the Z-axis direction (vertical direction) by expanding and contracting the elevating portion 12, and can also perform a rotation operation around the θ-axis. I have. Therefore, the transfer arm 11 of the transfer robot 10 can access the plurality of pods 9 arranged in the substrate storage unit 7, the wafer mounting unit 20, and the processing unit 50. W is conveyed.

Here, the transfer arm 1 of the transfer robot 10
When the user 1 accesses the pod 9, it is necessary to open the hermetically closed pod 9 so that the transport arm 11 can access the pod 9. Therefore, in the substrate processing apparatus 100, pod openers 8 are provided at respective positions where the pods 9 are placed. As in the state of reference numeral 1a shown in FIG.
When the pod 9 is placed in the substrate storage section 7, the pod opener 8 extends the arm to unlock the pod 9 lid. Then, as shown by a reference numeral 1b in FIG. 2, the arm is moved in the Y-axis direction while holding the lid of the pod 9, and the pod 9 is released from the closed state. In the state of reference numeral 1b, the transfer arm 11 of the transfer robot 10 cannot access the inside of the pod 9, so that the pod opener 9 moves the arm holding the lid, as in the state of 1c shown in FIG. Lower it.

By such an operation, the closed state of the pod 9 is released, and the transfer arm 11 of the transfer robot 10
The wafer W in the pod 9 can be accessed. The pod 9 is sealed so as not to contaminate the wafer W by keeping the wafer W in a clean atmosphere separated from the outside air. However, the inside of the substrate processing apparatus 100 is the same as the inside of the pod 9. It is configured to maintain a clean atmosphere, and the opening operation of the pod 9 is performed by the substrate processing apparatus 1.
Since the lid is opened in the inside of the wafer W, there is no problem of contaminating the wafer W.

Then, in the transfer robot 10, the transfer arm 11 extends toward the inside of the pod 9 and takes out one wafer W from the inside of the pod 9. The transfer robot 10
The transfer arm 11 moves in the axial direction and the Z-axis direction, and rotates about the θ-axis.
Of the wafer W taken out of the mounting portion 20 to the transfer position L
b. The transfer arm 1 of the transfer robot 10
1 accesses the processing unit 50 and takes out the wafer W on which all processing is completed. Then, the transfer robot 10
Performs movement in the X-axis direction and movement in the Z-axis direction,
By performing a rotation operation about the θ axis, the transfer arm 11 accesses a predetermined position of the pod 9 and stores the wafer W after the cleaning process after the CMP process in the pod 9.

In the substrate processing apparatus 100, the wafer W after the CMP processing, which is mounted on the mounting section 20, is processed by the processing section 3.
The shuttle transfer robot 60 is provided to transfer the wafer W, which has been processed by the processing unit 30 to the processing unit 40, and to transfer the wafer W, which has been processed by the processing unit 40, to the processing unit 50. Have been. Shuttle transfer robot 60
Can be moved along the X-axis direction, as will be described later. The wafer W placed on the substrate transfer position La can be transferred to the processing unit 30 and the wafer W processed by the processing unit 30 can be transferred to the processing unit 30. Since the wafer W that has been processed by the processing unit 40 is further transferred to the processing unit 50, the transfer operation between the processing units is performed simultaneously and collectively.

As described above, in the substrate processing apparatus 100, the transfer robot 10 performs the transfer operation of the wafer W from the pod 9 to the mounting section 20, and the shuttle transfer robot 6
No. 0 performs a transfer operation of the wafer W from the mounting unit 20 to the processing units 30, 40, and 50. Then, the processing unit 50 sends the pod 9
The transfer of the wafer W to the transfer robot 10 is performed again by the transfer robot 10.

The substrate processing apparatus 100 is provided with a cover 80 that can be moved up and down so that a processing solution or the like used in the processing in the processing units 30, 40, and 50 does not scatter outside the processing unit. I have. When the wafer W is transferred between the processing units by the shuttle transfer robot 60, the cover 80 is moved up by a lift mechanism such as a cylinder (not shown) to move the shuttle transfer robot 60 along the X-axis direction. When the transfer between the processing units by the shuttle transfer robot 60 is completed and the cleaning processing is performed in each processing unit, the cover 80 is lowered by the elevation drive mechanism, and each of the processing units 30 and 40,5
Cover the side surface of 0, etc. Therefore, when processing is performed on the wafer W in each processing unit, processing liquid, particles, and the like from other processing units do not adhere, and clean processing can be performed.

The overall configuration of the substrate processing apparatus 100 is as described above, and a plurality of processing units 30, 40, and 50 for processing a wafer W are arranged in a row so as to be adjacent to each other along the X-axis direction. The shuttle W is arranged so that the wafer W can be transferred between the processing units by one shuttle transfer robot 60 at a time. Therefore, the footprint of the substrate processing apparatus 100 can be reduced. it can. Further, since the mounting unit 20 can be directly inlined with the CMP apparatus 200 which is an external apparatus, the footprint when the substrate processing apparatus 100 and the CMP apparatus 200 are inlined can be reduced.

Next, a detailed configuration of the mounting section 20 will be described. FIG. 4 is a diagram showing the configuration of the mounting portion, and FIG.
FIG. 2 is a schematic configuration diagram showing a second processing liquid supply unit according to the present invention.

As shown in FIG. 4, the mounting portion 20 has a two-stage configuration in which a portion on which the wafer W is mounted is arranged vertically. The lower first mounting portion 20B is a mounting portion on which the wafer W is temporarily mounted before transferring the wafer W to be subjected to the CMP processing to the CMP apparatus 200, and the upper second mounting portion 20A is , CMP
This is a mounting section for temporarily mounting the wafer W after the polishing process in the apparatus 200. By thus configuring the mounting section 20 in two stages, the mounting positions of the wafer W before and after the processing by the external device such as the CMP apparatus 200 can be provided differently, and the wafers W before and after the processing can be provided respectively. Can be handled. In the process of processing the wafer W, the wafer W is configured to be disposed above the wafer W before processing in order to reduce the possibility that particles and the like adhere to the wafer W after the CMP processing. Generally, the mounting section 20 of the substrate processing apparatus 100 also has such a configuration.

The first mounting portion 20B includes the substrate processing apparatus 1
Two openings 21 are formed on the side of the conveyance path 15 and the side of the CMP apparatus 200. Then, the transfer arm 11 of the transfer robot 10 enters the first mounting portion 20 </ b> B from the transfer path 15 while holding the wafer W, and mounts the wafer W on the pins 22. In addition, a transfer arm (not shown) of the transfer unit 210 of the CMP apparatus 200 enters from the CMP apparatus 200 side, takes out the wafer W mounted on the pin 22, and moves the wafer W into the CMP apparatus 200. W is conveyed.

The second mounting portion 20A has a CMP device 200
Two openings 23 are formed so that the transfer arm of the transfer unit 210 on the side and the shuttle transfer robot 60 can access the transfer arm. After holding the wafer W that has been polished or the like from the CMP apparatus 200 side, the transfer unit 210 enters and places the wafer W on the four pins 24 (see FIG. 5). Evacuate from inside.

The second mounting portion 20A has a first nozzle 25 corresponding to first processing liquid supply means for supplying pure water as a processing liquid to the surface of the wafer W mounted on the pin 24. A plurality of second nozzles 26 corresponding to second processing liquid supply means for supplying pure water to the back surface of the wafer W are provided.
The first nozzle 25 is provided above the center of the surface of the wafer W placed on the pins 24, and supplies the processing liquid to the center of the surface of the wafer W. As shown in FIG. 5, a plurality of second nozzles 26 are provided concentrically on the support table 27 so as to face the back surface of the wafer W.
Has a plurality of discharge ports, and supplies pure water to the entire back surface of the wafer W from the discharge ports in a shower shape. Therefore, the substrate processing apparatus 100 does not require a conventional loader for immersing the wafer W in water.

The first nozzle 25 is connected to a pure water supply source (not shown) via a supply pipe 250 and a supply pipe 201, and the first nozzle 26 is connected to a pure water supply source via a supply pipe 260 and a supply pipe 201. And is connected to a pure water supply source (not shown). The supply pipe 201 is connected to the supply pipe 25 on the way.
0 and 260. Supply pipe 20
An opening / closing valve 202 and a solenoid valve 203 are provided in the middle of 1. The opening / closing valve 202 controls whether or not pure water is supplied from the first nozzle 25 and the second nozzle 26 to the wafer W by the opening / closing control. The electromagnetic valve 203 controls the flow rate of pure water supplied from the first nozzle 25 and the second nozzle 26 by the control. Also, the supply pipe 25
An electromagnetic valve 251 is provided in the middle of 0, and the flow of pure water supplied from the first nozzle 25 is controlled by controlling the electromagnetic valve 251. Therefore, the first nozzle 2
The flow rate of the pure water supplied from 5 is doubly controlled by the solenoid valve 203 and the solenoid valve 251.

The pure water discharged to the wafer W by the first nozzle 25 and the second nozzle 26 is supplied to the first mounting section 2.
The first mounting portion 20A is provided with a cup 28 around a support 27 so that the wafer W
It is configured to collect pure water flowing down from the container and discharge it to the outside of the first mounting portion 20A. With such a configuration, C
It is possible to keep the front and back surfaces of the wafer W after the MP processing always in a wet state, and thereafter, the processing units 30, 40, 5
The cleaning effect of the cleaning process performed at 0 can be enhanced.

Next, a detailed configuration of the shuttle transfer robot will be described. FIG. 6 is a perspective view of the shuttle transfer robot.

The shuttle transfer robot 60 has the wafer W
Are provided, a plurality of holding units 61 (three in the figure) for holding the wafer W are provided when the transfer between the processing units is performed. Each holding unit 61 includes a first arm 61a and a second arm 61b.
And The first arm 61a and the second arm 61b are provided with a holding member 62 for holding the wafer W at the periphery.

A rotation shaft 66 supported by a support member 68 is fitted into the first arm 61a, the second arm 61b, and the base end. The first arm 61a and the second arm 61b rotate in the XY plane with the rotation of the rotation shaft 66.

The first arm 61a of each substrate holding portion 61 is connected to the first rod 71a via a connecting member at the base end. Therefore, when the first rod 71a moves in the X-axis direction, each holding portion 6
A plurality of first arms 61a move in the X-axis direction in synchronization with each other. Also, the first rod 71a and the cylinder rod of the cylinder 64a fixed to the base 63,
They are connected by a connecting member 72a. Cylinder 64
Since a is arranged so as to extend and retract the cylinder rod along the X-axis direction, the first rod 71a is moved along the X-axis direction by driving the cylinder 64a. As a result, Each of the first arms 61a of the plurality of holding portions 61 is in the + X axis direction or -X
It is possible to operate synchronously in the axial direction.

On the other hand, the second arm 61b of each holding portion 61 is similarly connected to the second rod 71b via a connecting member at the base end. Therefore,
When the second rod 71b moves in the X-axis direction, each holding portion 6
The plurality of second arms 61b for one move in the X-axis direction synchronously. Further, the second rod 71b and the cylinder rod of the cylinder 64b fixed to the base 63,
They are connected by a connecting member 72b. Cylinder 64
b is arranged so as to extend and retract the cylinder rod along the X-axis direction. Therefore, by driving the cylinder 64b, the second rod 71b is moved along the X-axis direction. Each of the second arms 61b of the holding portion 61 is in the + X axis direction or -X
It is possible to operate synchronously in the axial direction.

Since the cylinders 64a and 64b synchronize the operation of holding the wafer W by the plurality of holding units 61, holding unit driving means commonly provided for each holding unit 61 is used. Will function as

When a controller (not shown) in the substrate processing apparatus 100 sends a drive command to each of the cylinders 64a and 64b so as to contract the cylinder rod by a predetermined amount, each of the first arms 61a becomes -X. While moving in the axial direction, each second arm 61b moves in the + X-axis direction. With this operation, the operation of holding the wafer W by the shuttle transfer robot 60 (that is, the operation of chucking the wafer W) is performed. This chucking operation is an operation of sandwiching the wafer W between the two arms of the first arm 61a and the second arm 61b. Position alignment of the wafer W to be transferred.

On the other hand, on the contrary, the controller
When a drive command is sent to the cylinders 4a and 64b to extend the cylinder rod by a predetermined amount, each first arm 61a receives + X
While moving in the axial direction, each second arm 61b moves in the −X axis direction. With this operation, an operation of releasing the holding state of the wafer W of the shuttle transfer robot 60 is performed.

A motor 65 is fixedly mounted on the base 63, and a belt 67 is mounted on a rotating shaft of the motor 65. The belt 67 is also mounted on a belt mounting member 69 provided on the rotating shaft 66. Therefore, by rotating the motor 65, the rotating shaft 66 can be rotated via the belt 67, and the driving of the motor 65 also rotates the plurality of holding units 61 in the α direction. By driving the motor 65 with the plurality of holding units 61 holding the wafer W, the wafer W also performs a rotation operation on the YZ plane.

Here, when a small amount of rotation in the α direction is given to the rotating shaft 66 by driving the motor 65, the holding unit 61 in the holding state of the wafer W performs a small amount of rotation in the α direction in that state. Therefore, the second mounting portion 20A of the mounting portion 20
The wafer W mounted on the pins 23 of the
1 and rotated in the α direction, the pin 2
2 will be separated. Similarly, each processing unit 30, 4
Also, the wafer W held at 0 is held by the holding unit 61 and rotated in the α direction so that each processing unit 3
It will be released from the holding state at 0,40.

A moving base 75 is connected to the lower part of the base 63, and the ball screw 74 screwed into the moving base 75 is rotated by the driving of the motor 73, whereby
The moving table 75 moves along the X-axis direction. Therefore,
By driving the motor 73, the base 63 also moves along the X axis, and at the same time, the plurality of holding portions 61
Move along the axial direction.

As described above, the shuttle transfer robot 6
0 indicates that the wafer W is held by driving the cylinders 64a and 64b when the wafer W is transferred between the processing units, and the wafer W is transferred from the mounting surface in each processing unit by the rotation drive by the motor 65. After being raised and raised by rotating in the α direction so that buffering with each processing unit does not occur, the motor 73 is driven to move the base 63 in the −X axis direction, and each wafer W is moved to the next It is transported to the processing section. Then, the motor 65 is driven to rotate the wafer W in the −α direction, and the cylinders 64 a and 64 b are driven to release the holding state of the wafer W and place the transported wafer W on each processing unit. .

The shuttle transfer robot 60 shown in FIG. 6 is provided with three holding portions 61. Of these, the holding portion 61 provided on the + X-axis direction side is the mounting portion 2.
0 from the processing unit 30 to the processing unit 40.
The holding unit 61 provided closest to the −X-axis direction is in charge of transferring the wafer W from the processing unit 40 to the processing unit 50. The state of the transfer of the wafer W will be described with reference to FIGS. FIGS. 7 and 8 are views showing the state of transfer of the wafer W between the processing units.

First, as shown in FIG. 7, the shuttle transfer robot 60 is located on the side corresponding to the mounting section 20 and the processing sections 30 and 40. During the processing of the wafer W in the processing units 30 and 40, the three holding units 61 are at the positions indicated by the chain lines in the figure. When the processing of the wafer W in the processing units 30 and 40 is completed, the holding units 61 are moved to the positions shown by solid lines in the drawing by driving the above-described cylinders 64a and 64b. Processing unit 30, Processing unit 4
The wafer W at 0 is held. Then, after each wafer W is raised by the rotation operation of the motor 65, the motor 73 is driven to thereby move the shuttle transfer robot 60.
Is moved in the −X-axis direction to the position shown in FIG.

Then, by the rotation operation of the motor 63,
After lowering the wafers W transferred to the processing units 30, 40, and 50, the holding units 61 indicated by solid lines in FIG. Is completed. When the holding unit 61 is retracted, the evacuation position 9 provided between the processing units is used.
Evacuate to 1.

As described above, the shuttle transfer robot 6
0 indicates that the transfer of the wafer W between the adjacent processing units is performed at the same time, so that the efficient transfer of the wafer W between the processing units is realized, Of the wafer W to the processing unit 30 and the processing unit 40
It is not necessary to separately provide a transfer robot for transferring the wafer W to the processing unit 40 and for transferring the wafer W from the processing unit 40 to the processing unit 50, so that the footprint of the substrate processing apparatus 100 can be reduced.

The removal of the wafer W from the processing section 50 is performed by the transfer arm 11 of the transfer robot 10 as described above.
Is configured to do so.

Next, the cover 80 will be described. FIG.
Is a perspective portion of the cover. As shown in FIG. 9, the cover 80 covers each processing unit so that the processing liquid or the like does not scatter when the processing unit 30, 40, 50 processes the wafer W. When the cover 80 is lowered, the retracted position 9
Holder 6 of shuttle transfer robot 60 retracted to 1
A concave portion 88 is provided at a position corresponding to each retreat position 91 so as not to be buffered. Therefore, if the cover 80 is lowered when the holding unit 61 of the shuttle transfer robot 60 is retracted to the position shown by the one-dot chain line in FIG. 8, the cover 80 does not come into contact with the holding unit 61 and the processing units 30 and 4
0,50 can be covered well.

If the cover 80 is lowered immediately after the holding unit 61 of the shuttle transfer robot 60 has retreated to the retreat position 91, the processing of the wafer W in each of the processing units 30, 40, and 50 can be started. it can.

Further, the cover 80 is provided with a cleaning liquid discharge nozzle 82, which can clean the holding portion 61 at the retracted position 91 shown by the dashed line in FIG. That is, by discharging a rinsing liquid such as pure water from the cleaning liquid discharge nozzle 82 to the holding unit 61 at the evacuation position 91, the holding unit 61 (in particular, the holding member 62) is transported between the processing units. It becomes possible to wash the adhered dirt and the like.

Next, the relationship between the cover 80 and the shuttle transfer robot 60 will be described with reference to FIG. FIG. 10A shows a case where the wafer W is transferred by the shuttle transfer robot.
FIG. 7 is a schematic side view showing an operation relationship between a cover and a holding unit when carrying out transfer between processing units. As shown in FIG.
The rotation shaft 66 of the shuttle transfer robot 60 is rotated by a small amount in the α direction, and the wafer W is transferred between the processing units while the holding unit 61 lifts the wafer W. At this time, the cover 80 is in a state of being lifted by a lifting means (not shown) so as not to be buffered during the transfer operation of the shuttle transfer robot 60.

By the way, when the transfer of the wafer W between the processing units is completed and the cover 80 is lowered to start the processing of the wafer W in each processing unit, the wafer W is located at a position corresponding to the processing unit 30, 40, 50. In preparation for the next transfer between the processing units, the shuttle transfer robot 60 is moved to a position corresponding to the mounting unit 20 and the processing units 30 and 40 in advance as necessary.

However, since each processing unit is processing the wafer W and the cover 80 is in a closed state, the substrate holding unit 6
When the shuttle transfer robot 60 is moved in the + X-axis direction in a state where 1 is at the retreat position 91, the shuttle transfer robot 60 collides with the cover 80.

Therefore, in the shuttle transfer robot 60, as shown in FIG. 10 (b), by rotating the rotary shaft 66 of the shuttle transfer robot 60 by about 90 degrees, the holding portion 61 is set in the upright state, and the cover is viewed from the side. 80 and the holding portion 61 are set so as not to overlap. In this way, even if the shuttle transfer robot 60 moves in the X-axis direction, the holding unit 61 does not buffer the cover 80, and during the processing of the wafer W in each processing unit, the shuttle transfer robot 60 is placed on the mounting unit. 20, and can be moved in advance to positions corresponding to the processing units 30 and 40. When the holder 61 is raised, the motor 65 described above is used.
Is a driving source, and when the shuttle transport robot 60 is moved in the X-axis direction, the above-described motor 73 is a driving source.

When the shuttle transfer robot 60 moves in the X-axis direction and reaches a position corresponding to the mounting section 20 and the processing sections 30 and 40, the motor 65 is driven in the reverse direction.
The upright holding unit 61 is returned to the substantially horizontal state again.

By such an operation, the holding portion 61 shown by the one-dot chain line in FIG. 8 can be moved to the position of the holding portion 61 shown by the one-dot chain line in FIG. 7 during processing of the wafer W in each processing section. By waiting at that position until the processing of the wafer W in each processing unit is completed, the next wafer W can be efficiently transferred between the processing units.

During the processing of the wafer W, the holding unit 6 waits at the position of the holding unit 61 indicated by the dashed line in FIG.
1 is performed, the mounting portion 20 is placed near the mounting portion 20.
A nozzle (not shown) for discharging a rinsing liquid may be provided to the holding unit 61 for chucking the wafer W in the inside.
Then, the holding unit 61 can be cleaned by discharging the rinse liquid from the nozzle provided near the mounting unit 20 and the cleaning liquid discharge nozzle 82 provided on the cover 80.

As described above, the substrate processing apparatus 1
00 denotes a plurality of processing units 3 that perform processing on the wafer W.
0, 40, and 50 are arranged in a row along the X-axis direction in accordance with the processing order of the wafers W, and one shuttle transfer robot 60 having a plurality of holding units 61 is provided between adjacent processing units. Since the transfer of the wafers W is performed collectively, there is no need to provide an independent transfer robot between each processing unit, and the footprint can be minimized.

When operating the plurality of holding units 61, the shuttle transfer robot 60 operates the cylinders 64a, 64a.
Since a common drive source such as b and the motor 65 is used, each of the holding units 61 can be operated in synchronization with the transfer of the wafer W between the processing units.
Despite being able to simultaneously carry from the mounting unit 20 to the processing unit 30, carry from the processing unit 30 to the processing unit 40, and carry from the processing unit 40 to the processing unit 50, a control mechanism at the time of carrying Can be easily configured.

Further, the CMP is performed at a position adjacent to the processing unit 30.
Since the mounting portion 20 serving as an interface with an external device such as the device 200 is provided, it is possible to directly inline with the external device such as the CMP device 200. FIG.
FIG. 3 is a diagram showing a configuration in which the substrate processing apparatus 100 is inlined with the CMP apparatus 200. As shown in FIG. 11, when the substrate processing apparatus 100 and the CMP apparatus 200 are in-lined, it is not necessary to provide a conveyor as in the related art, so that the footprint can be extremely reduced.

Before the cleaning process is performed in the processing units 30, 40, and 50, the wafer W after the CMP process in the CMP apparatus 200 is processed by the first nozzle 25 and the second nozzle 26 in the second mounting unit 20A. Since pure water is supplied to the front and back surfaces of the wafer W to keep the front and back surfaces of the wafer W in a wet state, it is possible to prevent particles such as polishing debris attached to the front and back surfaces of the wafer W from drying. As a result, the processing unit 3
The cleaning effect at 0, 40, 50 can be enhanced.

The solenoid valve 203 is provided in the middle of the supply pipe 201.
Is provided, so with a simple configuration of the solenoid valve 203,
The flow rate of pure water as a processing liquid supplied to the wafer W from the first nozzle 25 and the second nozzle 26 can be controlled. Therefore, if the flow rate of pure water can be controlled, pure water supply processing can be performed in accordance with the state of particles such as polishing debris attached to the front and back surfaces of the wafer W, and the cleaning effect in the processing units 30, 40, and 50 can be further improved. Can be enhanced.

Since the plurality of second nozzles 26 are arranged concentrically on the support table 27 so as to face the back surface of the wafer W, pure water is supplied from the second nozzles 26 to the back surface of the wafer W. When supplied, pure water is supplied to the entire back surface of the wafer W, and the entire back surface of the wafer W can be kept wet.

Further, after the drying of particles such as polishing debris adhered to the front and back surfaces of the wafer W in the second mounting portion 20A is prevented, the shuttle transfer robot 60 immediately removes the double-sided cleaning portion from the second mounting portion 20A. Processing unit 3
The wafer W is conveyed to the wafer W, and the front and back brushes 32 are brought into contact with the front and back surfaces of the wafer W in the processing unit 30 to clean the front and back surfaces of the wafer W. Particles such as polished swarf can be reliably removed.

In the embodiment of the present invention described above, the back surface of the wafer W is
4 supports the wafer W, but is not limited to this. For example, a plurality of holding members may be used to hold a plurality of locations on the outer peripheral edge of the wafer W.

[0074]

As described above, according to the present invention,
Before transporting the substrate to the cleaning unit for cleaning the substrate having the processed surface, the processing liquid is first applied to the surface of the substrate by the first processing liquid supply unit while the substrate is once supported by the support unit of the mounting unit. And processing liquid is supplied to the back surface of the substrate by the second processing liquid supply means, so that particles such as polishing debris generated by the processing adhered to the front and back surfaces of the processed substrate are prevented from drying. In addition, the cleaning effect in the cleaning section can be enhanced.

[Brief description of the drawings]

FIG. 1 is a plan view showing a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a YZ diagram of the substrate processing apparatus according to the embodiment of the present invention;
It is a schematic sectional drawing in a plane.

FIG. 3 shows a ZX of the substrate processing apparatus according to the embodiment of the present invention.
It is a schematic sectional drawing in a plane.

FIG. 4 is a diagram showing a configuration of a mounting section according to the embodiment of the present invention.

FIG. 5 is a schematic configuration diagram showing a second processing liquid supply unit according to the embodiment of the present invention.

FIG. 6 is a perspective view of the shuttle transfer robot.

FIG. 7 is an explanatory diagram illustrating a state of conveyance between processing units.

FIG. 8 is an explanatory diagram showing a state of conveyance between processing units.

FIG. 9 is a perspective view of a cover.

FIG. 10 is a schematic side view illustrating an operation relationship between a cover and a holding unit.

FIG. 11 illustrates a substrate processing apparatus according to an embodiment of the present invention,
FIG. 3 is a diagram illustrating a configuration inline with an MP device.

FIG. 12 is a schematic configuration diagram of a conventional substrate processing apparatus.

FIG. 13 is a diagram showing a configuration in which a conventional substrate processing apparatus is inlined with a CMP apparatus.

[Explanation of symbols]

 Reference Signs List 20 mounting section 20A second mounting section 25 first nozzle 26 second nozzle 27 support base 30, 40, 50 processing section 31 front brush 32 back brush 60 shuttle transport robot 61 holding section 100 substrate processing apparatus 200 CMP apparatus 203 solenoid valve

 ────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Nobuo Tani 4-chome Tenjin Kitamachi 1-chome, Horikawa-dori-Terauchi, Kamigyo-ku, Kyoto F-term (reference) within Dainippon Screen Mfg. Co., Ltd. 3B201 AA03 AB23 AB34 AB43 BA02 BA13 BB23 BB24 BB33 BB93 CB15 CB25 CC01 CC13 5F031 CA02 FA01 FA11 GA43 GA44 GA47 GA48 GA49 GA50 LA07 LA12 MA23 NA09 NA10

Claims (6)

[Claims] 1. A substrate processing apparatus for performing a predetermined process on a substrate, comprising: a cleaning unit for cleaning a substrate having a surface processed, and a step of temporarily mounting the substrate before transporting the substrate to the cleaning unit. A mounting section for mounting, and a transport unit for transporting the substrate from the mounting section to the cleaning section, wherein the mounting section supports the substrate, and a surface of the substrate supported by the supporting section. A substrate processing apparatus, comprising: first processing liquid supply means for supplying a processing liquid to a substrate; and second processing liquid supply means for supplying a processing liquid to the back surface of the substrate supported by the support means. 2. The substrate processing apparatus according to claim 1, further comprising a flow rate adjusting means for adjusting a flow rate of the processing liquid supplied from said second processing liquid supply means. . 3. The substrate processing apparatus according to claim 2, wherein said flow rate adjusting means adjusts a flow rate of the processing liquid supplied from said first processing liquid supply means. . 4. The substrate processing apparatus according to claim 2, wherein said flow rate adjusting means is an electromagnetic valve. 5. The substrate processing apparatus according to claim 1, wherein said second processing liquid supply means includes a plurality of nozzles arranged concentrically. Substrate processing equipment. 6. The substrate processing apparatus according to claim 1, wherein the cleaning unit is configured to contact the surface of the substrate and clean the surface of the substrate. A second cleaning tool for cleaning the front surface of the substrate by contacting the back surface of the substrate, and a double-side cleaning processing unit for cleaning the front and back surfaces of the substrate; A substrate processing apparatus for transporting a substrate to a unit.