JP2010051901A - Apparatus and method of treating substrate - Google Patents

Apparatus and method of treating substrate Download PDF

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JP2010051901A
JP2010051901A JP2008220019A JP2008220019A JP2010051901A JP 2010051901 A JP2010051901 A JP 2010051901A JP 2008220019 A JP2008220019 A JP 2008220019A JP 2008220019 A JP2008220019 A JP 2008220019A JP 2010051901 A JP2010051901 A JP 2010051901A
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substrate
fluid
processing apparatus
supply means
chamber
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JP2010051901A5 (en
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Harumichi Hirose
治道 廣瀬
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Shibaura Mechatronics Corp
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Shibaura Mechatronics Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a treatment apparatus of a substrate, which prevents a substrate conveying state from becoming unstable due to the pressure of fluid when treating a conveyed substrate with the fluid. <P>SOLUTION: The treatment apparatus of the substrate for treating the substrate with the fluid while conveying it includes: a chamber 3; a support roller 14 and a drive roller 17 provided inside the chamber for conveying the substrate in a prescribed direction; a nozzle body 62 for jetting and supplying the fluid to the plate surface of the substrate conveyed by the support roller 14 and the drive roller 17; and an attenuation control member 65 disposed on the tilt to the jetting direction of the fluid jetted from the nozzle body across the conveyed substrate, for reflecting a part of the fluid jetted from the nozzle body corresponding to the inclination angle before the distal end of the substrate reaches the flow path of the fluid, transmitting the rest and executing attenuation. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

この発明は基板を搬送しながら処理液や気体などの流体によって処理する基板の処理装置及び処理方法に関する。   The present invention relates to a substrate processing apparatus and a processing method for processing with a fluid such as a processing liquid or a gas while transporting the substrate.

液晶表示装置に用いられるガラス製の基板には回路パターンが形成される。基板に回路パターンを形成するにはリソグラフィープロセスが採用される。リソグラフィープロセスは周知のように上記基板にレジストを塗布し、このレジストに回路パターンが形成されたマスクを介して光を照射する。   A circuit pattern is formed on a glass substrate used in the liquid crystal display device. A lithographic process is employed to form a circuit pattern on the substrate. As is well known, in the lithography process, a resist is applied to the substrate, and light is irradiated through a mask having a circuit pattern formed on the resist.

つぎに、レジストの光が照射されない部分或いは光が照射された部分を除去し、基板のレジストが除去された部分をエッチングする。そして、エッチング後にレジストを除去するという一連の工程を複数回繰り返すことで、上記基板に回路パターンを形成する。   Next, the portion of the resist not irradiated with light or the portion irradiated with light is removed, and the portion of the substrate where the resist is removed is etched. A circuit pattern is formed on the substrate by repeating a series of steps of removing the resist after etching a plurality of times.

このようなリソグラフィープロセスにおいては、上記基板に現像液、エッチング液或いはエッチング後にレジストを除去する剥離液などによって基板を処理する工程、さらにリンス液によって洗浄する工程、洗浄後に基板に付着残留したリンス液を気体によって除去する乾燥工程が必要となる。   In such a lithography process, the substrate is treated with a developing solution, an etching solution or a stripping solution for removing the resist after etching, a step of washing with a rinsing solution, and a rinsing solution remaining on the substrate after washing. The drying process which removes by gas is required.

従来、基板に対して上述した一連の処理を行う場合、上記基板は軸線を水平にして配置された搬送ローラによってほぼ水平な状態でそれぞれの処理を行なう処理チャンバに順次搬送し、各処理チャンバで基板を処理液によって処理したり、処理後に圧縮気体を噴射して乾燥処理するようにしている。   Conventionally, when the above-described series of processing is performed on a substrate, the substrate is sequentially transported to processing chambers in which the processing is performed in a substantially horizontal state by transport rollers arranged with the axis line horizontal, and in each processing chamber. The substrate is processed with a processing liquid, or after the processing, a compressed gas is injected to dry the substrate.

ところで、最近では液晶表示装置に用いられるガラス製の基板が大型化及び薄型化する傾向にある。そのため、基板を水平搬送すると、搬送ローラ間における基板の撓みが大きくなるため、各処理チャンバでの処理が基板の板面全体にわたって均一に行えなくなるということが生じる。   Recently, glass substrates used in liquid crystal display devices tend to be larger and thinner. For this reason, when the substrate is horizontally transported, the bending of the substrate between the transport rollers becomes large, so that processing in each processing chamber cannot be performed uniformly over the entire plate surface of the substrate.

さらに、基板が大型化すると、その基板を搬送する搬送ローラが設けられた搬送軸が長尺化する。しかも、基板が大型化することで、基板上に供給される処理液が増大し、基板上の処理液の量に応じて上記搬送軸に加わる荷重が大きくなるから、それらのことによって搬送軸の撓みが増大する。そのため、基板は搬送軸が撓むことによっても撓みが生じ、均一な処理が行えなくなるということがある。   Furthermore, when the substrate is enlarged, the transport shaft provided with the transport roller for transporting the substrate becomes longer. In addition, since the substrate is increased in size, the processing liquid supplied onto the substrate is increased, and the load applied to the transport shaft is increased according to the amount of the processing liquid on the substrate. Deflection increases. Therefore, the substrate may be bent even when the transport shaft is bent, and uniform processing may not be performed.

そこで、処理液によって基板を処理する際、上記基板が処理液の重量によって撓むのを防止するため、基板を所定の傾斜角度、たとえば垂直状態から15度傾斜させた75度の角度で搬送し、傾斜方向の上側に位置する前面に処理液を噴射することで、その基板の前面を処理し、ついでその板面にエアーナイフによって気体を噴射して処理液を除去する乾燥処理が行なわれる。   Therefore, when the substrate is processed with the processing liquid, the substrate is transported at a predetermined inclination angle, for example, an angle of 75 degrees inclined by 15 degrees from the vertical state in order to prevent the substrate from being bent by the weight of the processing liquid. Then, the processing liquid is sprayed onto the front surface located on the upper side in the tilt direction to process the front surface of the substrate, and then a drying process is performed in which gas is sprayed onto the plate surface with an air knife to remove the processing liquid.

基板を傾斜させて搬送し、その基板の前面に処理液を噴射供給するようにすれば、処理液は基板の板面に留まらず、板面を上方から下方へ向かって円滑に流れるから、処理液の重量によって基板が撓むのを防止することができる。   If the substrate is transported at an incline and the processing liquid is sprayed and supplied to the front surface of the substrate, the processing liquid does not stay on the plate surface of the substrate, but smoothly flows from the upper side to the lower side. It is possible to prevent the substrate from being bent by the weight of the liquid.

基板を所定の角度で傾斜させてチャンバ内を搬送して処理液や気体によって処理する処理装置の場合、特許文献1に示されるように、チャンバ内に基板の傾斜方向下側となる背面を支持する支持ローラと、下端を支持する駆動ローラが設けられる。駆動ローラは駆動軸に取付けられ、その駆動軸は駆動源によって回転駆動される。   In the case of a processing apparatus in which a substrate is tilted at a predetermined angle and is transported through the chamber and processed with a processing liquid or gas, as shown in Patent Document 1, a back surface that is lower in the tilt direction of the substrate is supported in the chamber. And a driving roller for supporting the lower end. The drive roller is attached to a drive shaft, and the drive shaft is rotationally driven by a drive source.

上記処理装置には、チャンバ内に複数の上記支持ローラと上記駆動ローラが上記基板の搬送方向に対して所定間隔で配置される。それによって、上記基板は上記支持ローラによって背面が支持されながら、下端が上記駆動ローラによって駆動され、所定方向に搬送されることになる。
特開2004−210511号公報
In the processing apparatus, a plurality of the supporting rollers and the driving roller are arranged in the chamber at a predetermined interval with respect to the transport direction of the substrate. As a result, the lower surface of the substrate is driven by the driving roller while being supported on the back surface by the support roller, and is conveyed in a predetermined direction.
JP 2004-210511 A

ところで、処理液の種類によってはその効果を高めるために、搬送される基板の前面に処理液をノズル体から、たとえば0.7MPa程度の高い圧力で噴射させるということが行なわれており、乾燥処理の場合も気体の供給圧力を高くすることで、処理を確実に、しかも短時間で行えるようにしている。   By the way, in order to enhance the effect depending on the type of the processing liquid, it is performed that the processing liquid is sprayed from the nozzle body to the front surface of the substrate to be transported at a high pressure of about 0.7 MPa, for example. In this case, the gas supply pressure is increased so that the processing can be performed reliably and in a short time.

一方、チャンバ内には複数の基板が所定の間隔で順次搬送される。つまり、チャンバ内を搬送される搬送方向下流側に位置する基板の後端と、上流側に位置する基板の前端との間には隙間があり、そのような搬送状態の下で上記処理液や気体が連続的に噴射される。   On the other hand, a plurality of substrates are sequentially transferred into the chamber at predetermined intervals. In other words, there is a gap between the rear end of the substrate that is transported in the chamber on the downstream side in the transport direction and the front end of the substrate that is positioned on the upstream side. Gas is continuously injected.

そのため、噴射された処理液や気体は、基板の前面に噴射されるだけでなく、前後方向に位置する一対の基板の前端と後端との間の隙間を通ってチャンバの後壁の内面に衝突することになる。   Therefore, the injected processing liquid and gas are not only injected to the front surface of the substrate, but also to the inner surface of the rear wall of the chamber through the gap between the front and rear ends of the pair of substrates positioned in the front-rear direction. It will collide.

チャンバの後壁の内面に衝突した処理液や気体は、その内面で反射して搬送される基板の背面に当たる。そのため、支持ローラに背面が支持されて搬送される基板は、その背面に当たる処理液の作用によって支持ローラから浮き上がる。   The processing liquid or gas that collides with the inner surface of the rear wall of the chamber hits the back surface of the substrate that is reflected and conveyed by the inner surface. For this reason, the substrate that is transported with the back surface supported by the support roller is lifted from the support roller by the action of the processing liquid that strikes the back surface.

基板が支持ローラから浮き上がれば、基板の搬送状態が不安定になったり、浮き上がりが大きな場合にはチャンバの端部壁に形成された基板を通すためのスリットを円滑に通過しなくなって基板が損傷したり、搬送不能になる虞がある。   If the substrate is lifted from the support roller, the substrate transfer state becomes unstable, or if the substrate is lifted significantly, the substrate does not smoothly pass through the slit for passing the substrate formed on the end wall of the chamber. There is a risk of damage or inability to transport.

この発明は基板に向けて噴射された処理液や気体などの流体のうち、基板の前端側を通過した流体がチャンバの内面で反射して搬送される基板の背面に当たることを防止した基板の処理装置及び処理方法を提供することにある。   The present invention is directed to a substrate processing that prevents a fluid that has passed through the front end side of the substrate from being sprayed toward the substrate from being reflected by the inner surface of the chamber and hitting the back surface of the substrate being conveyed. To provide an apparatus and a processing method.

この発明は、基板を搬送しながら流体によって処理する基板の処理装置であって、
チャンバと、
このチャンバ内に設けられ上記基板を所定方向に搬送する搬送手段と、
この搬送手段によって搬送される上記基板の板面に上記流体を噴射供給する流体供給手段と、
上記搬送手段を挟んで上記流体供給手段から噴射される流体の噴射方向に対して傾斜して配置され上記基板の先端が上記流体の流路に到達する前に上記流体供給手段から噴射された流体の一部をその傾斜角度に応じて反射させ、残りを透過させて減衰させる減衰制御部材と
を具備したことを特徴とする基板の処理装置にある。
The present invention is a substrate processing apparatus for processing with a fluid while transporting the substrate,
A chamber;
A transfer means provided in the chamber for transferring the substrate in a predetermined direction;
Fluid supply means for injecting and supplying the fluid to the plate surface of the substrate conveyed by the conveyance means;
A fluid that is disposed with an inclination with respect to the ejection direction of the fluid ejected from the fluid supply means across the transport means, and is ejected from the fluid supply means before the tip of the substrate reaches the fluid flow path. A substrate processing apparatus comprising: an attenuation control member configured to reflect a part of the substrate according to the inclination angle and transmit the rest to attenuate.

上記減衰制御部材は上記流体供給手段から噴射された流体の一部を通過する多数の通孔が形成された多孔部材からなることが好ましい。   It is preferable that the attenuation control member is formed of a porous member in which a large number of through holes that pass through a part of the fluid ejected from the fluid supply means are formed.

上記流体供給手段は、上記基板に処理液を供給してこの基板を処理するためのノズル体であることが好ましい。   The fluid supply means is preferably a nozzle body for supplying a processing liquid to the substrate and processing the substrate.

上記流体供給手段は、上記基板に圧縮空気を供給してこの基板を乾燥処理するためのエアーナイフであることが好ましい。   The fluid supply means is preferably an air knife for supplying compressed air to the substrate and drying the substrate.

搬送される基板の上面と下面の両方の面に流体を供給する一対の流体供給手段を備え、各流体供給手段から噴射される流体の噴射方向にそれぞれ上記減衰制御部材が配置されることが好ましい。   It is preferable that a pair of fluid supply means for supplying fluid to both the upper surface and the lower surface of the substrate to be conveyed is provided, and the attenuation control member is disposed in the ejection direction of the fluid ejected from each fluid supply means. .

上記基板は所定の角度で傾斜して搬送されることが好ましい。   It is preferable that the substrate is transported while being inclined at a predetermined angle.

上記減衰制御部材は一対の側壁によってV字状に形成されていて、一方の側壁が基板の搬送方向に対して所定の角度で傾斜して配置され、他方の側壁が基板Wの搬送方向に対してほぼ垂直に配置されていることが好ましい。   The attenuation control member is formed in a V shape by a pair of side walls, one side wall is inclined at a predetermined angle with respect to the substrate transport direction, and the other side wall is relative to the substrate W transport direction. It is preferable that they are arranged almost vertically.

この発明は、基板を搬送しながら流体によって処理する基板の処理方法であって、
上記基板を所定方向に沿って搬送する工程と、
搬送される上記基板の板面に上記流体を噴射供給する工程と、
上記基板の先端が上記流体の流路に到達する前に噴射供給された流体の一部をその噴射方向に対して所定の角度で傾斜した方向に反射させ、残りを減衰させる工程と
を具備したことを特徴とする基板の処理方法にある。
The present invention is a substrate processing method for processing with a fluid while transporting the substrate,
Transporting the substrate along a predetermined direction;
Injecting and supplying the fluid to the plate surface of the substrate to be conveyed;
Reflecting a part of the fluid jetted and supplied before the tip of the substrate reaches the fluid flow path in a direction inclined at a predetermined angle with respect to the jetting direction, and attenuating the rest. The substrate processing method is characterized by the above.

この発明によれば、基板の先端が流体の流路に到達する前に噴射供給されることで、基板の前端側と通過した流体のうちの一部を噴射方向に対して所定の角度で傾斜した方向に反射させ、残りを減衰させるようにした。   According to the present invention, since the tip of the substrate is jetted and supplied before reaching the fluid flow path, the front end side of the substrate and a portion of the fluid that has passed through are inclined at a predetermined angle with respect to the jetting direction. The reflection was made in the direction and the rest was attenuated.

そのため、基板に当たらなかった流体がチャンバの内面で反射して搬送される基板の背面に当たるのが防止されるから、基板の搬送が噴射供給された流体によって不安定になるのを防止することができる。   Therefore, it is possible to prevent the fluid that has not hit the substrate from being reflected by the inner surface of the chamber and hitting the back surface of the substrate to be transported. it can.

以下、この発明の実施の形態を図面を参照しながら説明する。
図1乃至図3はこの発明の第1の実施の形態を示す。図1はこの発明の処理装置の概略的構成を示す斜視図であって、この処理装置は装置本体1を有する。この装置本体1は分割された複数の処理ユニット、この実施の形態では第1乃至第5の処理ユニット1A〜1Eを分解可能に一列に連結してなる。
Embodiments of the present invention will be described below with reference to the drawings.
1 to 3 show a first embodiment of the present invention. FIG. 1 is a perspective view showing a schematic configuration of a processing apparatus according to the present invention. The processing apparatus has an apparatus main body 1. This apparatus main body 1 is formed by connecting a plurality of divided processing units, in this embodiment, first to fifth processing units 1A to 1E in a row so as to be disassembled.

各処理ユニット1A〜1Eは架台2を有する。この架台2の前面には箱型状のチャンバ3が所定の角度で傾斜して保持されている。上記架台2とチャンバ3の上面には上部搬送部4が設けられている。上記架台2の下端の幅方向両端には板状の一対の脚体5(一方のみ図示)が分解可能に設けられる。   Each processing unit 1 </ b> A to 1 </ b> E has a gantry 2. A box-shaped chamber 3 is held on the front surface of the gantry 2 at a predetermined angle. An upper transfer unit 4 is provided on the upper surface of the gantry 2 and the chamber 3. A pair of plate-like legs 5 (only one is shown) are provided at both ends in the width direction of the lower end of the gantry 2 so as to be disassembled.

上記チャンバ3は上記架台2に所定の角度である、たとえば垂直な状態から15度傾斜した、水平面に対して75度の角度で傾斜して保持されていて、幅方向の両側面には75度の角度で傾斜して搬送される基板Wが通過するスリット13(図1に一箇所だけ図示)が形成されている。   The chamber 3 is held at a predetermined angle with respect to the gantry 2, for example, 15 degrees from a vertical state and inclined at an angle of 75 degrees with respect to a horizontal plane, and 75 degrees on both side surfaces in the width direction. The slit 13 (only one place is shown in FIG. 1) through which the substrate W transported with an inclination of 1 passes is formed.

上記チャンバ3の内部には、図2と図3に示すように搬送手段を構成する複数の搬送軸15がチャンバ3の幅方向に所定間隔で設けられている。この搬送軸15には複数の支持ローラ14が軸方向に所定間隔で回転可能に設けられている。上記搬送軸15は、軸線が上記スリット13と同じ角度で傾斜するよう、上端及び下端がそれぞれブラケット15aによって支持されている。   Inside the chamber 3, as shown in FIGS. 2 and 3, a plurality of conveying shafts 15 constituting a conveying means are provided at predetermined intervals in the width direction of the chamber 3. A plurality of support rollers 14 are provided on the transport shaft 15 so as to be rotatable at predetermined intervals in the axial direction. The transport shaft 15 is supported at its upper and lower ends by brackets 15 a so that the axis is inclined at the same angle as the slit 13.

上記チャンバ3内には、上記スリット13から基板Wが図1に鎖線で示す第1の姿勢変換部16によって水平状態から75度の角度に変換されて搬入される。すなわち、未処理の基板Wは上記上部搬送部4によって第5の処理ユニット1E側から第1の処理ユニット1A側に搬送されて上記第1の姿勢変換部16で水平状態から75度の角度に傾斜されて上記第1の処理ユニット1Aに搬入される。   A substrate W is transferred from the slit 13 into the chamber 3 by being converted from a horizontal state to an angle of 75 degrees by a first posture changing unit 16 indicated by a chain line in FIG. That is, the unprocessed substrate W is transported from the fifth processing unit 1E side to the first processing unit 1A side by the upper transport unit 4, and is moved from the horizontal state to the 75 degree angle by the first attitude conversion unit 16. It is inclined and carried into the first processing unit 1A.

第1の処理ユニット1Aのチャンバ3内に搬入された基板Wは上記搬送軸15に設けられた支持ローラ14によって非デバイス面である背面が支持される。この基板Wの下端は駆動ローラ17(図2に示す)の外周面によって支持される。   The back surface, which is a non-device surface, is supported on the substrate W carried into the chamber 3 of the first processing unit 1 </ b> A by the support roller 14 provided on the transport shaft 15. The lower end of the substrate W is supported by the outer peripheral surface of the drive roller 17 (shown in FIG. 2).

上記駆動ローラ17は駆動ユニット18の回転軸19に設けられている。そして、この回転軸19が回転駆動さることで、駆動ローラ17に下端が支持され背面が上記支持ローラ14に支持された上記基板Wが上記駆動ローラ17の回転方向に搬送されるようになっている。   The drive roller 17 is provided on the rotary shaft 19 of the drive unit 18. When the rotary shaft 19 is rotationally driven, the substrate W, the lower end of which is supported by the drive roller 17 and the back surface of which is supported by the support roller 14, is conveyed in the rotational direction of the drive roller 17. Yes.

基板Wは搬送方向上流側の第1乃至第3の処理ユニット1A〜1Cで処理液としての剥離液でレジストの除去が行なわれた後、第4の処理ユニット1Dで処理液としての洗浄液で洗浄処理が行なわれる。そして、第5の処理ユニット1Eで熱風などの流体である、気体によって乾燥処理が行なわれる。   The substrate W is cleaned with the removing liquid as the processing liquid in the first to third processing units 1A to 1C upstream in the transport direction, and then cleaned with the cleaning liquid as the processing liquid in the fourth processing unit 1D. Processing is performed. In the fifth processing unit 1E, the drying process is performed with a gas that is a fluid such as hot air.

各処理ユニット1A〜1Eを順次通過して処理された基板Wは75度の角度で傾斜した状態で上記第5の処理ユニット1Eから搬出される。第5の処理ユニット1Eから搬出された基板Wは、図1に鎖線で示す第2の姿勢変換部23で傾斜状態から水平状態に姿勢が変換されて次工程に受け渡される。   The substrate W processed by sequentially passing through each of the processing units 1A to 1E is unloaded from the fifth processing unit 1E while being inclined at an angle of 75 degrees. The substrate W carried out of the fifth processing unit 1E is changed in posture from the inclined state to the horizontal state by the second posture converting unit 23 shown by a chain line in FIG.

図2に示すように、上記駆動ユニット18はチャンバ3の幅方向(基板Wの搬送方向)に沿って長い板状の下部ベース部材24を有する。この下部ベース部材24の上面には下部ベース部材24と同じ長さのチャンネル状の上部ベース部材25が両側下端を固着して設けられている。   As shown in FIG. 2, the drive unit 18 has a plate-like lower base member 24 that is long along the width direction of the chamber 3 (the transport direction of the substrate W). On the upper surface of the lower base member 24, a channel-shaped upper base member 25 having the same length as the lower base member 24 is provided with both lower ends fixed.

上記上部ベース部材25には、上記下部ベース部材24とほぼ同じ大きさの平板状の取付け部材26の幅方向の一端部と他端部とが上部ベース部材25に対して傾きの調整可能に連結して設けられている。つまり、上記取り付け部材26はチャンバ3の前後方向に傾き角度の調整ができるようになっている。   One end and the other end in the width direction of a flat mounting member 26 having substantially the same size as the lower base member 24 are connected to the upper base member 25 so that the inclination of the upper base member 25 can be adjusted. Is provided. That is, the attachment member 26 can adjust the tilt angle in the front-rear direction of the chamber 3.

上記取付け部材26の幅方向の一端と他端とには、それぞれ複数のブラケット31が上記取付け部材26の長手方向に対して所定間隔で、しかも幅方向に対応する位置に設けられている。幅方向において対応する一対のブラケット31には図示しない軸受を介して上記回転軸19の軸方向の中途部が回転可能に支持されている。この回転軸19の先端には上記駆動ローラ17が取り付けられ、後端には第1の歯車33が嵌着される。   A plurality of brackets 31 are provided at one end and the other end in the width direction of the mounting member 26 at predetermined intervals with respect to the longitudinal direction of the mounting member 26 and at positions corresponding to the width direction. A pair of brackets 31 corresponding to each other in the width direction are rotatably supported in the axial direction of the rotary shaft 19 via a bearing (not shown). The driving roller 17 is attached to the tip of the rotating shaft 19, and the first gear 33 is fitted to the rear end.

そして、上記架台2に上記チャンバ3を設置したならば、この架台2に設けられた支持部41の上面にロッド状の4本の基準部材35の下端面がねじ42によって取付け固定される。   When the chamber 3 is installed on the gantry 2, the lower end surfaces of the four rod-shaped reference members 35 are attached and fixed to the upper surface of the support portion 41 provided on the gantry 2 with screws 42.

上記駆動ユニット18に支持された複数の回転軸19の後端部はチャンバ3の前壁12bに開口された導出孔44から駆動室45に突出する。そして、駆動ユニット18をチャンバ3内に組み込んだ後で、上記回転軸19の後端に上記第1の歯車33が嵌着される。   The rear end portions of the plurality of rotating shafts 19 supported by the drive unit 18 protrude into the drive chamber 45 from a lead-out hole 44 opened in the front wall 12 b of the chamber 3. Then, after the drive unit 18 is assembled in the chamber 3, the first gear 33 is fitted to the rear end of the rotary shaft 19.

上記駆動室45には駆動源51が設けられている。この駆動源51の出力軸には駆動プーリ53が嵌着されている。この駆動プーリ53と従動プーリ54とにはベルト55が張設されている。上記従動プーリ54は図示しない第2の歯車が同軸に設けられている。この第2の歯車は上記第1の歯車33に噛合している。   A drive source 51 is provided in the drive chamber 45. A drive pulley 53 is fitted on the output shaft of the drive source 51. A belt 55 is stretched between the driving pulley 53 and the driven pulley 54. The driven pulley 54 is provided with a second gear (not shown) coaxially. The second gear meshes with the first gear 33.

それによって、駆動源51が作動すれば、上記回転軸19が回転駆動されることになるから、この回転軸19の先端に設けられた上記駆動ローラ17も回転駆動される。駆動ローラ17が回転駆動されれば、これらの駆動ローラ17によって下端が支持された基板Wは上記駆動ローラ17の回転方向に搬送されることになる。基板Wの搬送方向を図3に矢印Xで示す。   As a result, when the drive source 51 is activated, the rotary shaft 19 is rotationally driven, so that the drive roller 17 provided at the tip of the rotary shaft 19 is also rotationally driven. If the driving roller 17 is rotationally driven, the substrate W having the lower end supported by the driving roller 17 is transported in the rotational direction of the driving roller 17. The transport direction of the substrate W is indicated by an arrow X in FIG.

上記基板Wの前面に剥離液を噴射してレジストの除去を行なう第1乃至第4の処理ユニット1A〜1Dには、傾斜して搬送される基板Wの傾斜方向の上側の面、つまり回路パターンが形成された前面と平行に離間対向する複数の給液管61が基板Wの搬送方向に対して所定間隔で配設されている。   In the first to fourth processing units 1A to 1D, which remove the resist by spraying a stripping solution on the front surface of the substrate W, the upper surface in the tilt direction of the substrate W conveyed in an inclined manner, that is, a circuit pattern. A plurality of liquid supply pipes 61 that are spaced apart and face each other in parallel with the front surface on which are formed are arranged at a predetermined interval in the transport direction of the substrate W.

各給液管61には基板Wの搬送方向と交差する軸線方向に対して所定間隔で複数のノズル体62が設けられている。上記給液管61とノズル体62は処理液供給手段を形成している。   Each liquid supply pipe 61 is provided with a plurality of nozzle bodies 62 at a predetermined interval with respect to an axial direction intersecting the transport direction of the substrate W. The liquid supply pipe 61 and the nozzle body 62 form a processing liquid supply means.

第1乃至第3の処理ユニット1A〜1Cの給液管61には剥離液が0.7MPa程度の高い圧力で供給され、第3の処理ユニット1Dには洗浄液が所定の圧力で供給される。それによって、給液管61に設けられたノズル体62から上記基板Wの前面に上記剥離液や洗浄液などの処理液が噴射されるようになっている。   The stripping liquid is supplied to the liquid supply pipes 61 of the first to third processing units 1A to 1C at a high pressure of about 0.7 MPa, and the cleaning liquid is supplied to the third processing unit 1D at a predetermined pressure. As a result, a treatment liquid such as the stripping liquid or the cleaning liquid is ejected from the nozzle body 62 provided in the liquid supply pipe 61 to the front surface of the substrate W.

基板Wは上記各処理ユニット1A〜1Dのチャンバ3内を所定間隔で搬送される。つまり、搬送方向下流側に位置する基板Wの後端と上流側に位置する基板Wの前端との間には図3に示す隙間Gがある。そのため、上記ノズル体62から基板Wの前面に向けて噴射された処理液の一部は上記隙間Gを通過することになる。   The substrate W is transported at predetermined intervals in the chambers 3 of the processing units 1A to 1D. That is, there is a gap G shown in FIG. 3 between the rear end of the substrate W located on the downstream side in the transport direction and the front end of the substrate W located on the upstream side. Therefore, a part of the processing liquid sprayed from the nozzle body 62 toward the front surface of the substrate W passes through the gap G.

基板Wの後端と前端との隙間Gを通過した処理液は一対の壁部65a,65bによってV字状に形成された減衰制御部材65に衝突する。すなわち、減衰制御部材65は上記支持ローラ14によって支持されて搬送される基板Wを挟んで上記ノズル体62が設けられた給液管61と対向する位置に傾斜して配置されている。   The processing liquid that has passed through the gap G between the rear end and the front end of the substrate W collides with the attenuation control member 65 formed in a V shape by the pair of wall portions 65a and 65b. In other words, the attenuation control member 65 is disposed at a position facing the liquid supply pipe 61 provided with the nozzle body 62 with the substrate W supported and transported by the support roller 14 interposed therebetween.

上記減衰制御部材65は多数の通孔66が形成された多孔部材、たとえばパンチングメタルなどによって形成されていて、その一方の側壁65aを基板Wの搬送方向に対して所定の角度、たとえば60度の角度で傾斜して配置され、他方の側壁65bをほぼ垂直にして配置されている。   The attenuation control member 65 is formed of a porous member in which a large number of through-holes 66 are formed, for example, punching metal, and one side wall 65a of the attenuation control member 65 with respect to the transport direction of the substrate W at a predetermined angle, for example, 60 degrees. It is arranged so as to be inclined at an angle, and the other side wall 65b is arranged almost vertically.

上記減衰部材65よりも基板Wの搬送方向上流側には、先端部が鉤状に屈曲された液戻り防止部材67がその先端部を上記減衰部材65の傾斜した一方の側壁65aの先端部に対向させて配置されている。   A liquid return preventing member 67 whose tip is bent like a bowl is located upstream of the damping member 65 in the transport direction of the substrate W, and the tip of the liquid return preventing member 67 is inclined to the tip of one inclined side wall 65a of the damping member 65. It is arranged to face each other.

なお、減衰制御部材65の通孔66が占める面積、つまり減衰制御部材65の開口率は40〜60%程度に設定され、減衰制御部材65で反射する処理液と透過する処理液の割合がほぼ同じになるよう設定されている。   The area occupied by the through-hole 66 of the attenuation control member 65, that is, the aperture ratio of the attenuation control member 65 is set to about 40 to 60%, and the ratio of the treatment liquid reflected by the attenuation control member 65 to the treatment liquid transmitted therethrough is almost equal. It is set to be the same.

上記ノズル体62から噴射された処理液が搬送方向後方に位置する基板Wの前端側の上記隙間Gを通過すると、その一部は上記隙間Gに対向して配置された上記減衰制御部材65の傾斜した一方の側壁65aに衝突し、残りの一部は側壁65aの通孔66を透過する。   When the processing liquid ejected from the nozzle body 62 passes through the gap G on the front end side of the substrate W located rearward in the transport direction, a part of the attenuation control member 65 disposed facing the gap G is used. It collides with one inclined side wall 65a, and the remaining part permeates through the through hole 66 of the side wall 65a.

減衰制御部材65の一方の側壁65aに衝突した処理液の一部は、減衰制御部材65の垂直に配置された他方の側壁65bに斜め下方に向かって反射し、その側壁65bに衝突してから一方の側壁65aに衝突するということを繰り返して減衰される。   A part of the processing liquid colliding with one side wall 65a of the attenuation control member 65 is reflected obliquely downward to the other side wall 65b arranged vertically of the attenuation control member 65 and collides with the side wall 65b. It is attenuated by repeating the collision with one side wall 65a.

一方の側壁65aで反射した処理液の残りの一部は図3に矢印L1で示すように他方の側壁65bを透過し、チャンバ3の後壁12cに向かって次第に減速(減衰)しながら進行し、ついには後壁12cに衝突して勢いが消失する。   The remaining part of the processing liquid reflected from one side wall 65a passes through the other side wall 65b as indicated by an arrow L1 in FIG. 3, and proceeds while gradually decelerating (attenuating) toward the rear wall 12c of the chamber 3. Eventually, it collides with the rear wall 12c and the momentum disappears.

上記一方の側壁65aの通孔66を透過した処理液はチャンバ3の後壁12cにほぼ垂直に衝突し、そこで反射して一方の側壁65aの背面に衝突するということを繰り返して減衰する。   The treatment liquid that has passed through the through-hole 66 of the one side wall 65a collides with the rear wall 12c of the chamber 3 almost perpendicularly, is reflected there, and is repeatedly attenuated by colliding with the back surface of the one side wall 65a.

したがって、ノズル体62から噴射されて隙間Gを通過した処理液は、上述したように減衰制御部材65によって確実に減衰されるから、搬送される基板Wの背面に当たって基板Wの搬送状態を不安定にするということが防止される。   Therefore, since the processing liquid that has been ejected from the nozzle body 62 and passed through the gap G is reliably attenuated by the attenuation control member 65 as described above, the processing state of the substrate W is unstable due to the back surface of the substrate W being transferred. Is prevented.

上記隙間Gを通過した処理液の一部或いはチャンバ3の後壁12cで反射した処理液の一部は上記隙間Gよりも基板Wの搬送方向上流側に流れて基板Wの背面に衝突し、基板Wの搬送状態を不安定する虞がある。   Part of the processing liquid that has passed through the gap G or part of the processing liquid reflected by the rear wall 12c of the chamber 3 flows upstream of the gap G in the transport direction of the substrate W and collides with the back surface of the substrate W. There is a possibility that the transport state of the substrate W may become unstable.

しかしながら、減衰制御部材65よりも基板Wの搬送方向上流側には液戻り防止部材7が設けられている。そのため、処理液が減衰制御部材65よりも基板Wの搬送方向上流側に流れて搬送される基板Wの下面に衝突するのが確実に防止されるから、そのことによっても搬送される基板Wが浮き上がって搬送状態が不安定になるのを防止することができる。   However, the liquid return preventing member 7 is provided on the upstream side of the attenuation control member 65 in the transport direction of the substrate W. Therefore, the processing liquid is reliably prevented from flowing to the upstream side in the transport direction of the substrate W with respect to the attenuation control member 65 and colliding with the lower surface of the transported substrate W. It is possible to prevent the conveyance state from becoming unstable due to floating.

上記第5の処理ユニット1Eには、図4に示すように搬送される基板Wの前面の上下方向全長に対向して流体供給手段としてのエアーナイフ68が配置されている。このエアーナイフ68は、同図に矢印Xで示す基板Wの搬送方向の後方に向けて圧縮気体を噴射するよう、たとえば45度の角度で傾斜して配置されている。   In the fifth processing unit 1E, as shown in FIG. 4, an air knife 68 is disposed as a fluid supply means so as to face the entire length of the front surface of the substrate W to be conveyed in the vertical direction. The air knife 68 is disposed at an angle of, for example, 45 degrees so as to inject compressed gas toward the rear in the transport direction of the substrate W indicated by an arrow X in the drawing.

上記エアーナイフ68の気体の噴射方向には、第1乃至第4の処理ユニット1A〜1Dと同様、減衰制御部材65が気体の噴射方向に対して45度の角度で傾斜し、しかもエアーナイフ68の全長にわたって対向する長さで配設されている。   In the gas injection direction of the air knife 68, the attenuation control member 65 is inclined at an angle of 45 degrees with respect to the gas injection direction, as in the first to fourth processing units 1A to 1D. It is arrange | positioned by the length which opposes over the full length.

それによって、エアーナイフ68から噴射された気体が所定間隔で搬送される前後一対の基板W間の隙間Gを通過すると、その気体の一部は矢印G1で示すように減衰制御部材65の板面で基板Wの搬送方向と平行方向に反射して徐々に減衰するから、搬送される基板Wの背面に当たって基板Wの搬送状態を不安定にすることがない。   As a result, when the gas jetted from the air knife 68 passes through the gap G between the pair of front and rear substrates W transported at a predetermined interval, a part of the gas is shown on the plate surface of the attenuation control member 65 as indicated by an arrow G1. Therefore, the light is reflected and attenuated gradually in a direction parallel to the transport direction of the substrate W, so that the transport state of the substrate W does not become unstable by hitting the back surface of the transported substrate W.

図4に矢印G2で示す上記減衰制御部材65を通過した気体は、通過時の抵抗によって減衰され、さらにチャンバ3の後壁12cの内面に衝突して減衰される。そのため、気体の一部が後壁12cで反射しても、大きく減速されているから、搬送される基板Wの背面に強く当たって基板Wの搬送状態を不安定にすることがない。   The gas that has passed through the attenuation control member 65 indicated by the arrow G2 in FIG. 4 is attenuated by the resistance when passing, and further collides with the inner surface of the rear wall 12c of the chamber 3 and is attenuated. For this reason, even if a part of the gas is reflected by the rear wall 12c, it is greatly decelerated, so that it does not hit the back surface of the substrate W being transported and make the transport state of the substrate W unstable.

すなわち、圧力の高い気体を基板Wの板面に噴射してその基板Wを乾燥処理する第5の処理ユニット1Eにおいても、エアーナイフ68から噴射される気体によって基板Wの搬送状態が不安定になるのを防止することができる。   That is, even in the fifth processing unit 1E that injects a high-pressure gas onto the plate surface of the substrate W to dry the substrate W, the transport state of the substrate W becomes unstable due to the gas injected from the air knife 68. Can be prevented.

図5はこの発明の他の実施の形態であって、この実施の形態は搬送される基板Wの前面と背面にそれぞれエアーナイフ68によって気体が噴射供給される場合であって、その場合には一対のエアーナイフ68の気体の噴射方向にそれぞれ減衰制御部材65を気体の噴射方向に対して所定の角度で傾斜させて設ける。   FIG. 5 shows another embodiment of the present invention. In this embodiment, gas is jetted and supplied to the front surface and the back surface of the substrate W to be transported by the air knife 68. In this case, Attenuation control members 65 are respectively provided at a predetermined angle with respect to the gas injection direction in the gas injection direction of the pair of air knives 68.

それによって、一対のエアーナイフ68から噴射される気体を、各エアーナイフ68に対向して配置された減衰制御部材65によって減衰させることができるから、基板Wの搬送状態が不安定になるのを防止することができる。   As a result, the gas ejected from the pair of air knives 68 can be attenuated by the attenuation control member 65 disposed opposite to each air knife 68, so that the transport state of the substrate W becomes unstable. Can be prevented.

上記各実施の形態では減衰制御部材を多孔部材であるパンチングメタルによって形成する例を挙げて説明したが、多孔部材としてはパンチングメタルに限られず、たとえばメッシュなどの他の部材であってもよい。   In each of the above-described embodiments, the example in which the attenuation control member is formed by punching metal that is a porous member has been described. However, the porous member is not limited to punching metal, and may be another member such as a mesh.

また、第1乃至第4の処理ユニットに、基板の搬送方向に対してノズル体を有する複数の給液管が所定間隔で設けられる場合、各給液管のノズル体に対向してそれぞれ減衰制御部材を設けるようにすればよい。
さらに、基板が所定の角度で傾斜して搬送される場合を例に挙げて説明したが、基板が水平に搬送される場合であって、この発明を適用することができる。
In addition, when the first to fourth processing units are provided with a plurality of liquid supply pipes having nozzle bodies with respect to the substrate transport direction at predetermined intervals, attenuation control is performed facing the nozzle bodies of the respective liquid supply pipes. A member may be provided.
Furthermore, although the case where the substrate is transported at a predetermined angle is described as an example, the present invention can be applied to a case where the substrate is transported horizontally.

この発明の一実施の形態の処理装置の概略的構成を示す斜視図。The perspective view which shows schematic structure of the processing apparatus of one embodiment of this invention. 上記処理装置の第1乃至第4のチャンバの縦断面図。The longitudinal cross-sectional view of the 1st thru | or 4th chamber of the said processing apparatus. 給液管と減衰制御部材との配置関係を示すチャンバの縦断面図。The longitudinal cross-sectional view of the chamber which shows the arrangement | positioning relationship between a liquid supply pipe and an attenuation | damping control member. エアーナイフが配置された第5の処理チャンバの縦断面図。The longitudinal cross-sectional view of the 5th processing chamber in which the air knife was arrange | positioned. この発明の他の実施の形態を示す一対のエアーナイフと減衰制御部材の配置関係を示す第5の処理チャンバの縦断面図。The longitudinal cross-sectional view of the 5th process chamber which shows the arrangement | positioning relationship of a pair of air knife and attenuation | damping control member which shows other embodiment of this invention.

符号の説明Explanation of symbols

3…チャンバ、14…支持ローラ、17…駆動ローラ、19…回転軸、61…給液管、62…ノズル体、65…減衰制御部材、66…通孔、68…エアーナイフ。   DESCRIPTION OF SYMBOLS 3 ... Chamber, 14 ... Support roller, 17 ... Drive roller, 19 ... Rotating shaft, 61 ... Liquid supply pipe, 62 ... Nozzle body, 65 ... Damping control member, 66 ... Through-hole, 68 ... Air knife.

Claims (8)

基板を搬送しながら流体によって処理する基板の処理装置であって、
チャンバと、
このチャンバ内に設けられ上記基板を所定方向に搬送する搬送手段と、
この搬送手段によって搬送される上記基板の板面に上記流体を噴射供給する流体供給手段と、
上記搬送手段を挟んで上記流体供給手段から噴射される流体の噴射方向に対して傾斜して配置され上記基板の先端が上記流体の流路に到達する前に上記流体供給手段から噴射された流体の一部をその傾斜角度に応じて反射させ、残りを透過させて減衰させる減衰制御部材と
を具備したことを特徴とする基板の処理装置。
A substrate processing apparatus for processing with a fluid while transporting a substrate,
A chamber;
A transfer means provided in the chamber for transferring the substrate in a predetermined direction;
Fluid supply means for injecting and supplying the fluid to the plate surface of the substrate conveyed by the conveyance means;
A fluid that is disposed with an inclination with respect to the ejection direction of the fluid ejected from the fluid supply means across the transport means, and is ejected from the fluid supply means before the tip of the substrate reaches the fluid flow path. A substrate processing apparatus, comprising: an attenuation control member that reflects a part of the substrate according to the inclination angle and transmits the rest to attenuate.
上記減衰制御部材は上記流体供給手段から噴射された流体の一部を通過する多数の通孔が形成された多孔部材からなることを特徴とする請求項1記載の基板の処理装置。   2. The substrate processing apparatus according to claim 1, wherein the attenuation control member comprises a porous member having a plurality of through holes that pass through a part of the fluid ejected from the fluid supply means. 上記流体供給手段は、上記基板に圧縮空気を供給してこの基板を乾燥処理するためのエアーナイフであることを特徴とする請求項1記載の基板の処理装置。   2. The substrate processing apparatus according to claim 1, wherein the fluid supply means is an air knife for supplying compressed air to the substrate and drying the substrate. 上記流体供給手段は、上記基板に処理液を供給してこの基板を処理するためのノズル体であることを特徴とする請求項1記載の基板の処理装置。   2. The substrate processing apparatus according to claim 1, wherein the fluid supply means is a nozzle body for supplying a processing liquid to the substrate and processing the substrate. 搬送される基板の上面と下面の両方の面に流体を供給する一対の流体供給手段を備え、各流体供給手段から噴射される流体の噴射方向にそれぞれ上記減衰制御部材が配置されることを特徴とする請求項1記載の基板の処理装置。   A pair of fluid supply means for supplying fluid to both the upper surface and the lower surface of the substrate to be conveyed is provided, and the attenuation control member is disposed in the ejection direction of the fluid ejected from each fluid supply means. The substrate processing apparatus according to claim 1. 上記基板は所定の角度で傾斜して搬送されることを特徴とする請求項1乃至5のいずれかに記載された基板の処理装置。   6. The substrate processing apparatus according to claim 1, wherein the substrate is conveyed while being inclined at a predetermined angle. 上記減衰制御部材は一対の側壁によってV字状に形成されていて、一方の側壁が基板の搬送方向に対して所定の角度で傾斜して配置され、他方の側壁が基板Wの搬送方向に対してほぼ垂直に配置されていることを特徴とする請求項1記載の基板の処理装置。   The attenuation control member is formed in a V-shape by a pair of side walls, one side wall is inclined at a predetermined angle with respect to the substrate transport direction, and the other side wall is relative to the substrate W transport direction. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus is arranged substantially vertically. 基板を搬送しながら流体によって処理する基板の処理方法であって、
上記基板を所定方向に沿って搬送する工程と、
搬送される上記基板の板面に上記流体を噴射供給する工程と、
上記基板の先端が上記流体の流路に到達する前に噴射供給された流体の一部をその噴射方向に対して所定の角度で傾斜した方向に反射させ、残りを減衰させる工程と
を具備したことを特徴とする基板の処理方法。
A substrate processing method for processing with a fluid while transporting a substrate,
Transporting the substrate along a predetermined direction;
Injecting and supplying the fluid to the plate surface of the substrate to be conveyed;
Reflecting a part of the fluid jetted and supplied before the tip of the substrate reaches the fluid flow path in a direction inclined at a predetermined angle with respect to the jetting direction, and attenuating the rest. And a substrate processing method.
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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139918U (en) * 1989-04-27 1990-11-22
JPH0737858A (en) * 1993-07-19 1995-02-07 Dainippon Screen Mfg Co Ltd Substrate treater
JPH08222540A (en) * 1995-02-17 1996-08-30 Hitachi Zosen Corp Apparatus for cleaning lead frame
JPH10154652A (en) * 1996-11-26 1998-06-09 Dainippon Screen Mfg Co Ltd Substrate treating device
JPH11334870A (en) * 1998-05-26 1999-12-07 Dainippon Screen Mfg Co Ltd Board processing device
JP2001188211A (en) * 1999-12-28 2001-07-10 Optrex Corp Developing device for electrode substrate for liquid crystal display element
JP2006131372A (en) * 2004-11-08 2006-05-25 Tokyo Electron Ltd Substrate treatment device, loading device, and unloading device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02139918U (en) * 1989-04-27 1990-11-22
JPH0737858A (en) * 1993-07-19 1995-02-07 Dainippon Screen Mfg Co Ltd Substrate treater
JPH08222540A (en) * 1995-02-17 1996-08-30 Hitachi Zosen Corp Apparatus for cleaning lead frame
JPH10154652A (en) * 1996-11-26 1998-06-09 Dainippon Screen Mfg Co Ltd Substrate treating device
JPH11334870A (en) * 1998-05-26 1999-12-07 Dainippon Screen Mfg Co Ltd Board processing device
JP2001188211A (en) * 1999-12-28 2001-07-10 Optrex Corp Developing device for electrode substrate for liquid crystal display element
JP2006131372A (en) * 2004-11-08 2006-05-25 Tokyo Electron Ltd Substrate treatment device, loading device, and unloading device

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