JPH10125925A - 半導体集積回路 - Google Patents

半導体集積回路

Info

Publication number
JPH10125925A
JPH10125925A JP28250796A JP28250796A JPH10125925A JP H10125925 A JPH10125925 A JP H10125925A JP 28250796 A JP28250796 A JP 28250796A JP 28250796 A JP28250796 A JP 28250796A JP H10125925 A JPH10125925 A JP H10125925A
Authority
JP
Japan
Prior art keywords
substrate
transistor
layer
soi
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP28250796A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10125925A5 (OSRAM
Inventor
Masako Yoshida
雅子 吉田
Yukito Owaki
幸人 大脇
Tsuneaki Fuse
常明 布施
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP28250796A priority Critical patent/JPH10125925A/ja
Publication of JPH10125925A publication Critical patent/JPH10125925A/ja
Publication of JPH10125925A5 publication Critical patent/JPH10125925A5/ja
Abandoned legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
JP28250796A 1996-10-24 1996-10-24 半導体集積回路 Abandoned JPH10125925A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28250796A JPH10125925A (ja) 1996-10-24 1996-10-24 半導体集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28250796A JPH10125925A (ja) 1996-10-24 1996-10-24 半導体集積回路

Publications (2)

Publication Number Publication Date
JPH10125925A true JPH10125925A (ja) 1998-05-15
JPH10125925A5 JPH10125925A5 (OSRAM) 2004-10-21

Family

ID=17653350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28250796A Abandoned JPH10125925A (ja) 1996-10-24 1996-10-24 半導体集積回路

Country Status (1)

Country Link
JP (1) JPH10125925A (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7115950B2 (en) 1999-09-14 2006-10-03 Sharp Kabushiki Kaisha Semiconductor device and method of manufacturing the same
JP2010153786A (ja) * 2008-12-23 2010-07-08 Internatl Business Mach Corp <Ibm> 半導体構造、半導体構造を形成する方法、および半導体デバイスを操作する方法（信号忠実度および電気的分離が強化されたｓｏｉ無線周波スイッチ）
US7829971B2 (en) 2007-12-14 2010-11-09 Denso Corporation Semiconductor apparatus
US8148809B2 (en) 2009-01-15 2012-04-03 Denso Corporation Semiconductor device, method for manufacturing the same, and multilayer substrate having the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7115950B2 (en) 1999-09-14 2006-10-03 Sharp Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US7829971B2 (en) 2007-12-14 2010-11-09 Denso Corporation Semiconductor apparatus
JP2010153786A (ja) * 2008-12-23 2010-07-08 Internatl Business Mach Corp <Ibm> 半導体構造、半導体構造を形成する方法、および半導体デバイスを操作する方法（信号忠実度および電気的分離が強化されたｓｏｉ無線周波スイッチ）
US8916467B2 (en) 2008-12-23 2014-12-23 International Business Machines Corporation SOI radio frequency switch with enhanced signal fidelity and electrical isolation
US8148809B2 (en) 2009-01-15 2012-04-03 Denso Corporation Semiconductor device, method for manufacturing the same, and multilayer substrate having the same

Similar Documents

Publication Publication Date Title
JP3437132B2 (ja) 半導体装置
US5982003A (en) Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility
JP3447927B2 (ja) 半導体装置およびその製造方法
JP3408762B2 (ja) Ｓｏｉ構造の半導体装置及びその製造方法
JP3101585B2 (ja) Ｍｏｓトランジスタ及びその製造方法
CN101160667B (zh) 改进单元稳定性和性能的混合块soi 6t-sram单元
US20030122214A1 (en) High performance PD SOI tunneling-biased mosfet
US6849883B2 (en) Strained SOI MOSFET device and method of fabricating same
JPH10242470A (ja) 半導体装置及びその製造方法
US20080248615A1 (en) Cmos structure for body ties in ultra-thin soi (utsoi) substrates
KR100333168B1 (ko) Ｓｏｉ 반도체장치 및 그 제조방법
US6545318B1 (en) Semiconductor device and manufacturing method thereof
JP2002516649A (ja) 側壁チャネルストップとボディ連係を提供するボディ延長を有するｓｏｉ形ｃｍｏｓ装置
JPH07183469A (ja) 半導体装置及び半導体装置のオペレーティング方法
JP3664704B2 (ja) 半導体装置
US7659172B2 (en) Structure and method for reducing miller capacitance in field effect transistors
EP0989613B1 (en) SOI transistor with body contact and method of forming same
US7087967B2 (en) LSI device having core and interface regions with SOI layers of different thickness
JPH05343686A (ja) 半導体装置およびその製造方法
JP4608710B2 (ja) 半導体装置
JP3244581B2 (ja) デュアルゲート型ｃｍｏｓ半導体装置
JP2000223701A (ja) 半導体装置およびその製造方法
JP3413039B2 (ja) 半導体装置
JP4886384B2 (ja) Ｎａｎｄゲート回路及びダイナミック回路
JP2001203357A (ja) 半導体装置

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040412

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040420

A762 Written abandonment of application

Free format text: JAPANESE INTERMEDIATE CODE: A762

Effective date: 20040528