JPH09289167A5 - - Google Patents

Info

Publication number
JPH09289167A5
JPH09289167A5 JP1996336340A JP33634096A JPH09289167A5 JP H09289167 A5 JPH09289167 A5 JP H09289167A5 JP 1996336340 A JP1996336340 A JP 1996336340A JP 33634096 A JP33634096 A JP 33634096A JP H09289167 A5 JPH09289167 A5 JP H09289167A5
Authority
JP
Japan
Prior art keywords
film
semiconductor device
substrate
silicon film
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1996336340A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09289167A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP33634096A priority Critical patent/JPH09289167A/ja
Priority claimed from JP33634096A external-priority patent/JPH09289167A/ja
Publication of JPH09289167A publication Critical patent/JPH09289167A/ja
Publication of JPH09289167A5 publication Critical patent/JPH09289167A5/ja
Withdrawn legal-status Critical Current

Links

JP33634096A 1996-02-23 1996-12-02 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法 Withdrawn JPH09289167A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33634096A JPH09289167A (ja) 1996-02-23 1996-12-02 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP8-61895 1996-02-23
JP6189696 1996-02-23
JP8-61896 1996-02-23
JP6189596 1996-02-23
JP33634096A JPH09289167A (ja) 1996-02-23 1996-12-02 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
JPH09289167A JPH09289167A (ja) 1997-11-04
JPH09289167A5 true JPH09289167A5 (cg-RX-API-DMAC10.html) 2004-11-18

Family

ID=27297671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33634096A Withdrawn JPH09289167A (ja) 1996-02-23 1996-12-02 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JPH09289167A (cg-RX-API-DMAC10.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6346730B1 (en) * 1999-04-06 2002-02-12 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device having a pixel TFT formed in a display region and a drive circuit formed in the periphery of the display region on the same substrate

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