JPH09289167A - 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法 - Google Patents

半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法

Info

Publication number
JPH09289167A
JPH09289167A JP33634096A JP33634096A JPH09289167A JP H09289167 A JPH09289167 A JP H09289167A JP 33634096 A JP33634096 A JP 33634096A JP 33634096 A JP33634096 A JP 33634096A JP H09289167 A JPH09289167 A JP H09289167A
Authority
JP
Japan
Prior art keywords
film
thin film
active layer
substrate
silicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP33634096A
Other languages
English (en)
Japanese (ja)
Other versions
JPH09289167A5 (cg-RX-API-DMAC10.html
Inventor
Shunpei Yamazaki
舜平 山崎
Jun Koyama
潤 小山
Shoji Miyanaga
昭治 宮永
Kenji Fukunaga
健司 福永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP33634096A priority Critical patent/JPH09289167A/ja
Publication of JPH09289167A publication Critical patent/JPH09289167A/ja
Publication of JPH09289167A5 publication Critical patent/JPH09289167A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP33634096A 1996-02-23 1996-12-02 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法 Withdrawn JPH09289167A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33634096A JPH09289167A (ja) 1996-02-23 1996-12-02 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP8-61895 1996-02-23
JP6189696 1996-02-23
JP8-61896 1996-02-23
JP6189596 1996-02-23
JP33634096A JPH09289167A (ja) 1996-02-23 1996-12-02 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法

Publications (2)

Publication Number Publication Date
JPH09289167A true JPH09289167A (ja) 1997-11-04
JPH09289167A5 JPH09289167A5 (cg-RX-API-DMAC10.html) 2004-11-18

Family

ID=27297671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33634096A Withdrawn JPH09289167A (ja) 1996-02-23 1996-12-02 半導体薄膜およびその作製方法ならびに半導体装置およびその作製方法

Country Status (1)

Country Link
JP (1) JPH09289167A (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7638805B2 (en) 1998-09-04 2009-12-29 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
JP2011014930A (ja) * 1999-04-06 2011-01-20 Semiconductor Energy Lab Co Ltd 半導体装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7638805B2 (en) 1998-09-04 2009-12-29 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
US7642598B2 (en) 1998-09-04 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
USRE42097E1 (en) 1998-09-04 2011-02-01 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
USRE42139E1 (en) 1998-09-04 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
USRE42241E1 (en) 1998-09-04 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
US9070604B2 (en) 1998-09-04 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device
JP2011014930A (ja) * 1999-04-06 2011-01-20 Semiconductor Energy Lab Co Ltd 半導体装置
US8541844B2 (en) 1999-04-06 2013-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

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