JPH0922958A - Manufacture of package for housing semiconductor element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a package by which a semiconductor element housed inside a container can be operated normally and stably for a long period by a method wherein a part of a metallized layer, for connection, which connects a metallized wiring layer on an insulating board to a metallized metal layer is covered with an insulating layer. SOLUTION: An insulating base body 1 comprises a step-shaped recessed part 1a used to house a semiconductor element. A plurality of metallized wiring layers 5 are applied to the surface from the stepped part of the recessed part 1a. A frameshaped metallized metal layer 8 is applied to the surface around the recessed part 1a. Then, a part of a metallized layer 10, for connection, which connects the metallized wiring layers 5 to the metallized metal layer 8 is covered with an insulating layer 11. Thereby, a container 4 which is composed of the insulating substrate 1 and a lid body 2 is airtightly sealed completely, and the semiconductor element which is housed at the inside of the container 4 can be operated normally and stably for a long period.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor element housing package for housing semiconductor elements,
More specifically, the present invention relates to a method of depositing a plated metal layer on a metallized metal layer deposited on a semiconductor device housing package by electrolytic plating.

[0002]

2. Description of the Related Art Conventionally, a semiconductor element accommodating package for accommodating a semiconductor element is generally made of an electrically insulating material such as an aluminum oxide sintered body and has a stepped concave portion for accommodating the semiconductor element on its upper surface. And an insulating substrate on which a plurality of metallized wiring layers made of a refractory metal powder such as tungsten, molybdenum, or manganese is deposited from around the step portion of the recess to the outer peripheral portion of the upper surface, and the metallized wiring layers. An external lead terminal made of a metal such as an iron-nickel alloy, which is attached to a portion adhered to the outer peripheral portion of the upper surface of the insulating substrate via a brazing material such as silver solder, and a lid made of an iron-nickel-cobalt alloy. The semiconductor element is bonded and fixed to the bottom surface of the concave portion of the insulating substrate with an adhesive such as a gold-silicon brazing material, and each electrode of the semiconductor element is bonded. It is electrically connected to the metallized wiring layer via a bonding wire, and then a lid is joined to the upper surface of the insulating substrate via a brazing material to hermetically seal the semiconductor element inside the container composed of the insulating substrate and the lid. It becomes a semiconductor device as a product by being housed in.

In the package for accommodating semiconductor elements, a frame-shaped metallized metal layer made of refractory metal powder such as tungsten, molybdenum or manganese is deposited on the upper surface around the recess of the insulating substrate. The container including the insulating base and the lid is hermetically sealed by joining the lid to the metallized metal layer in the form of a strip through a sealing material such as a gold-tin brazing material.

The metallized wiring layer and the frame-shaped metallized metal layer deposited on the insulating substrate have excellent corrosion resistance against nickel, gold, etc. on the exposed surface thereof, and gold-tin solder as a bonding wire or a sealing material. A metal having a good bonding property with a metal or the like is deposited by a plating method, and the plated metal layer made of nickel, gold or the like effectively prevents oxidative corrosion of the metallized wiring layer and the metallized metal layer and bonds with the metallized wiring layer. The connection with the wire and the joining of the metallized metal layer and the lid through the sealing material such as a gold-tin brazing material are easy and strong.

Further, the plating metal layer is usually deposited on the exposed surfaces of the metallized wiring layer and the metallized metal layer by an electrolytic plating method. Specifically, a part of the metallized wiring layer and the metallized metal layer are connected. External lead terminals that are electrically connected to each metallized wiring layer and electrically connected to each metallized wiring layer in common by a connecting member are attached through a brazing material, and then these are placed in a predetermined electrolytic plating solution. Immersion and applying plating power to each metallized wiring layer and metallized metal layer through external lead terminals, depositing and depositing a plated metal layer on the surface of each metallized wiring layer and metallized metal layer, and finally the metallization for connection Part of the layer is ground and removed by a grinder such as a router to electrically separate the metallized wiring layer and the metallized metal layer. .

[0006]

However, according to this conventional package for accommodating semiconductor elements, the metallized wiring layer and the metallized metal layer are deposited when the plated metal layer is deposited on the exposed surfaces of the metallized wiring layer and the metallized metal layer. The plated metal layer is also deposited on the exposed surface of the metallization layer for connection that electrically connects the connection metallization layer, and when a part of the metallization layer for connection is ground and removed by a grinding device such as a router, the surface of the metallization layer for connection is removed. Part of the deposited plating metal layer is peeled from the connection metallization layer due to mechanical stress during grinding, and as a result, moisture in the atmosphere enters between the peeled plating metal layer and the connection metallization layer. As a result, corrosion is generated in the metallization layer for connection, and the corrosion progresses to the metallization metal layer to hermetically seal the container including the insulating base and the lid. Breaking the stop, the semiconductor element housed in the container properly, had the disadvantage and can not be stably operated.

[0007]

[Object] The present invention has been devised in view of the above conventional drawbacks, and an object of the present invention is to package a semiconductor element in which a semiconductor element accommodated therein can be normally and stably operated for a long period of time. It is to provide a manufacturing method of.

[0008]

The present invention has a stepped recess for accommodating a semiconductor element on the upper surface, and a plurality of metallized wiring layers are deposited from the stepped portion of the recess to the outer periphery of the upper surface. In addition, an insulating substrate having a frame-shaped metallized metal layer deposited on the upper surface around the recess, a plurality of external lead terminals attached to the metallized wiring layer, and the framed metallized metal layer. A package for accommodating a semiconductor element, comprising a lid to be attached, characterized in that the insulating base body to which the external lead terminals are attached is manufactured by the following steps (1) to (6). Is.

(1) A step-like recess for accommodating a semiconductor element is provided on the upper surface, and a plurality of metallized wiring layers are provided on the upper surface around the recess from the stepped portion of the recess to the outer peripheral portion of the upper surface. Forming a metallized metal layer on the upper surface of which a metallization layer for connection connecting at least one of the metallized wiring layers and the metallized metal layer is formed, and (2) a part of the metallized layer for connection. And (3) attaching the other ends of a plurality of external lead terminals, one end of which is commonly connected to the connecting member, to each metallized wiring layer, and (4) the metallized wiring. A metal layer, a metallized metal layer, a metallized layer for connection, and an external lead terminal, and a plating metal layer is deposited on the exposed surfaces of the outer lead terminals by electrolytic plating. The step of grinding and removing the layer where the layer is adhered to electrically separate the metallized wiring layer and the metallized metal layer, and (6) the step of cutting and separating each external lead terminal from the connecting member. Has a stepped concave portion for accommodating a semiconductor element on the upper surface, and a plurality of metallized wiring layers are deposited from the step portion of the concave portion to the outer peripheral portion of the upper surface, and a frame-shaped metallized layer is formed on the upper surface around the concave portion. Semiconductor device housing including an insulating substrate having a metal layer deposited thereon, a plurality of external lead terminals attached to the metallized wiring layer, and a lid attached to the frame-shaped metallized metal layer A package for use, wherein the insulating base body to which the external lead terminals are attached is manufactured by the following steps (1) to (6).

(1) A step-like recess for accommodating a semiconductor element is provided on the upper surface, and a plurality of metallized wiring layers are provided on the upper surface around the recess from the stepped portion of the recess to the outer peripheral portion of the upper surface. Forming a metallized metal layer on the upper surface of which a metallization layer for connection connecting at least one of the metallized wiring layers and the metallized metal layer is formed, and (2) a part of the metallized layer for connection. And (3) attaching the other ends of the plurality of external lead terminals, one end of which is commonly connected to the connecting member, to each metallized wiring layer. ,
(4) A step of depositing a plating metal layer on the exposed surfaces of the metallized wiring layer, the metallized metal layer, the metallized layer for connection, and the external lead terminals by electrolytic plating, (5)
A step of grinding and removing a part of the connection metallization layer in a gap between the two insulating layers to electrically separate the metallization wiring layer and the metallization metal layer; and (6) connecting the external lead terminals. Process of cutting and separating from parts

[0011]

According to the method of manufacturing a package for housing a semiconductor device of the present invention, two metallization layers for connection, which connect the metallized wiring layer and the metallized metal layer, are covered with an insulating layer or have two gaps between them. When the plated metal layer is deposited on the exposed surfaces of the metallized wiring layer and the metallized metal layer because it is covered with an insulating layer, the plated metal layer is deposited on the exposed surface of the metallized layer for connection, and a part of the metallized layer for connection Even if part of the plated metal layer adhered to the surface of the metallizing layer for connection is peeled off by the mechanical stress during grinding when it is ground and removed by a grinding device such as a router, the peeling is effectively prevented by the insulating layer. As a result, moisture in the atmosphere enters between the metallizing layer for connection and the plated metal layer, and the metallizing layer for connection is formed by the infiltrated water. There is not to be corroded, whereby the complete hermetic sealing of the container made of the insulating base and the lid, the semiconductor element housed in the container properly, it is possible to stably operate.

[0012]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. FIG. 1 shows an embodiment of a semiconductor element housing package manufactured by the manufacturing method of the present invention, in which 1 is an insulating base and 2 is a lid. The insulating base 1 and the lid 2 constitute a container 4 for housing the semiconductor element 3.

The insulating substrate 1 is made of an aluminum oxide sintered body, a mullite sintered body, an aluminum nitride sintered body,
It is made of an electrically insulating material such as a silicon carbide sintered body or glass ceramics, and a step-like recess 1a for accommodating a semiconductor element is formed in the center of the upper surface thereof. , And is fixed by adhesion through an adhesive such as resin or brazing material.

The insulating substrate 1 has a plurality of metallized wiring layers 5 extending from the stepped portion of the recess 1a through the inside to the outer peripheral portion of the upper surface. The metallized wiring layer 5 has a stepped portion of the recessed portion 1a. The semiconductor element 3 is located in the area
Are electrically connected to each other via bonding wires 6, and external lead terminals 7 connected to an external electric circuit are connected to an external electric circuit through a brazing material such as silver brazing material. Be attached.

The metallized wiring layer 5 is made of tungsten,
It is made of a metal such as molybdenum, manganese, palladium, silver, and copper, and has a function of connecting each electrode of the semiconductor element 3 to the external lead terminal 7.

The external lead terminals 7 attached to the metallized wiring layer 5 have the function of connecting the respective electrodes of the semiconductor element 3 to a predetermined external electric circuit, such as iron-nickel-cobalt alloy or iron-nickel alloy. It is made of metal material.

Further, the insulating substrate 1 has a recess 1a on its upper surface.
A frame-shaped metallized metal layer 8 is attached to the periphery, and the metal lid 2 is bonded to the metallized metal layer 8 via a sealing material made of gold-tin brazing material or the like. ing.

The frame-shaped metallized metal layer 8 is made of a metal such as tungsten, molybdenum, manganese, palladium, silver and copper, and acts as a base metal layer when the lid 2 is bonded to the insulating base 1.

The metallized wiring layer 5 and the metallized metal layer 8 deposited on the insulating substrate 1 have excellent corrosion resistance against nickel, gold, etc. on their exposed surfaces, and have good bonding properties with bonding wires and sealing materials. An excellent plating metal layer 9 is deposited by a conventionally known electrolytic plating method, and the plating metal layer 9 effectively prevents the metallized wiring layer 5 and the metallized metal layer 8 from being oxidized and corroded, and the metallized wiring layer The bonding between the bonding wire 5 and the bonding wire 6 and the bonding between the metallized metal layer 8 and the lid 2 are easy and strong.

Thus, according to this semiconductor element housing package, the semiconductor element 3 is formed on the bottom surface of the recess 1a of the insulating base 1.
Is bonded and fixed through an adhesive such as glass, resin, or a brazing material, and each electrode of the semiconductor element 3 is electrically connected to the metallized wiring layer 5 through a bonding wire 6.
Thereafter, the lid 2 is joined to the frame-shaped metallized metal layer 8 adhered to the upper surface of the insulating base 1 via a sealing material such as a gold-tin brazing material, and the insulating base 1 and the lid 2 are separated from each other. A semiconductor device as a final product is obtained by hermetically housing the semiconductor element 3 in the container 4 made of the above.

Next, a method of manufacturing the insulating base body to which the external lead terminals of the above-mentioned semiconductor element housing package are attached will be described with reference to FIGS. First, FIG.
As shown in (b), a stepped recess 1a for accommodating a semiconductor element is provided on the upper surface, and a plurality of metallized wiring layers 5 are provided around the recess 1a from the step portion of the recess 1a to the outer peripheral portion of the upper surface. A frame-shaped metallized metal layer 8 is provided on the upper surface, and an insulating substrate 1 on which at least one of the metallized wiring layers 5 and a connection metallization layer 10 for connecting the metallized metal layer 8 are adhered to the upper surface is prepared and the connection is made. A part of the metallized layer 10 is covered with the insulating layer 11.

The insulating substrate 1 on which the metallized wiring layer 5, the metallized metal layer 8, the metallized layer for connection 10 and the insulating layer 11 are adhered is made of, for example, an aluminum oxide sintered body, aluminum oxide, silicon oxide, Appropriate organic binders, solvents, plasticizers, dispersants, etc. are added to and mixed with raw material powders of calcium oxide, magnesium oxide, etc. to form a slurry, and this is formed into a sheet using the conventionally known doctor blade method. To obtain a plurality of ceramic green sheets, and thereafter, the ceramic green sheets are appropriately punched, and the ceramic green sheets are laminated on top of each other to form a ceramic green body, and finally the ceramic green sheet is subjected to a reducing atmosphere. About 1
The metallized wiring layer 5, the metallized metal layer 8 and the connecting metallized layer 10 are manufactured by firing at a temperature of 600 ° C. For example, a metal powder such as tungsten or molybdenum is mixed with an appropriate organic binder, a plasticizer and a solvent. The metal paste is mixed to obtain a ceramic paste, which is printed and applied in advance to a predetermined pattern by a screen printing method on the ceramic green sheet to be the insulating substrate 1, so that the insulating paste is formed in a predetermined pattern on the insulating substrate 1.

Further, the insulating layer 11 is made of a ceramic raw material powder having the same quality as that of the insulating substrate 1, and an appropriate organic binder, plasticizer,
A solvent is added and mixed to obtain an insulating paste, and the insulating paste is applied to a part of the metallizing layer for connection by screen printing by a screen printing method.

Next, as shown in FIGS. 3 (a) and 3 (b),
In addition to the external lead terminal 7, one end of which is electrically commonly connected by a frame-shaped connecting member 12 to a portion of the metallized wiring layer 5 attached to the insulating substrate 1 which is led to the outer peripheral portion of the upper surface of the insulating substrate 1. Attach the ends with a brazing material such as silver wax.

The external lead terminal 7 is made of a metal material such as an iron-nickel alloy or an iron-nickel-cobalt alloy, and the ingot (lump) of the iron-nickel alloy or the like is rolled, punched or etched. It is formed in a state in which one end is attached to the connecting member 12 by performing a conventionally known metal processing method such as a method.

The external lead terminals 7 are attached to the metallized wiring layer 5 by placing the external lead terminals 7 on the metallized wiring layer 5 with a silver brazing foil sandwiched between them. It is performed by melting at a temperature of about 850 ° C.

Next, as shown in FIGS. 4A and 4B, a plating metal layer 9 is deposited on the surfaces of the metallized wiring layer 5 and the metallized metal layer 8 by electrolytic plating.

The metallized wiring layer 5 and the metallized metal layer 8 are coated with the plated metal layer 9 by immersing the insulating substrate 1 with the external lead terminals 7 in an electrolytic plating solution of nickel or gold and external leads. This is performed by applying plating power for electrolytic plating to the metallized wiring layer 5 and the metallized metal layer 8 via the terminal 7. In this case, the metallized wiring layer 5 and the metallized metal layer 8 are electrically connected by the connecting metallized layer 10, and each metallized wiring layer 5 is electrically connected by the connecting member 12 of the external lead terminal 7. Therefore, the plating metal layer 9 can be deposited on all the metallized wiring layers 5 and the metallized metal layers 8 simply by applying the plating power to the external lead terminals 7.

Finally, as shown in FIGS. 5 (a) and 5 (b),
The portion of the connection metallization layer 10 covered with the insulating layer 11 is ground and removed by using a grinding device such as a router to electrically separate the metallized wiring layer 5 and the metallized metal layer 8 from each other, as shown in FIG. The insulating substrate 1 to which the external lead terminals 7 are attached is completed.

In this case, since the surface of the connecting metallized layer 10 ground and removed by using a grinder such as a router is covered with the insulating layer 11, the plated metal layer 9 is not deposited, Therefore, even if the connection metallization layer is ground and removed by a grinding device, the plated metal layer 9 is never separated from the connection metallization layer 10 due to the mechanical stress of grinding, and as a result, the connection metallization layer 10 and the plated metal layer are not separated. Moisture in the atmosphere penetrates into the layer 9 to corrode the connection metallization layer 10 and the corrosion progresses to the metallization metal layer 8 to hermetically seal the container 4 composed of the insulating substrate 1 and the lid 2. It won't break.

The present invention is not limited to the above-mentioned embodiments, and various modifications can be made without departing from the scope of the present invention. For example, in the above-mentioned embodiments, the metallization layer for connection is used. An insulating layer is partially deposited, and the connecting metallization layer in the deposited region of the insulating layer is ground and removed using a grinder such as a router to electrically separate the metallized wiring layer and the metallized metal layer. I tried to
As shown in (a) and (b), two insulating layers 11a and 11b having a gap between them are deposited on the surface of the connecting metallization layer 10 and are located in the gap between the two insulating layers 11a and 11b. The metallized wiring layer 5 and the metallized metal layer 8 may be electrically isolated by grinding and removing the connecting metallization layer 10 by using a grinding device such as a router. in this case,
The two insulating layers 11a and 11b effectively prevent the plated metal layer deposited on the surface of the connection metallization layer 10 from being separated from the connection metallization layer 10 due to mechanical stress of grinding. Moisture in the atmosphere penetrates between the metallized layer 10 and the plated metal layer to corrode the connecting metallized layer 10 and the corrosion progresses to the metallized metal layer 8 so that the container including the insulating base and the lid is It does not break the hermetic seal.

[0032]

According to the method of manufacturing a package for accommodating semiconductor elements of the present invention, a part of the metallizing layer for connection connecting the metallized wiring layer and the metallized metal layer is covered with an insulating layer or has a gap therebetween. Since the metallized wiring layer and the metallized metal layer are covered with two insulating layers, when the plated metal layer is deposited on the exposed surfaces of the metallized wiring layer and the metallized metal layer, the plated metal layer is deposited on the exposed surface of the metallized layer for connection. Even if part of the plated metal layer deposited on the surface of the metallizing layer for connection is peeled off by mechanical stress during grinding when part of it is ground and removed by a grinding device such as a router, the peeling is effective by the insulating layer. Is prevented by
As a result, moisture in the atmosphere does not enter between the metallizing layer for connection and the plated metal layer, and the metallizing layer for connection does not corrode due to the intruded water. It becomes possible to completely hermetically seal the container formed, and to normally and stably operate the semiconductor element housed inside the container.

[Brief description of drawings]

1A and 1B are a cross-sectional view showing an embodiment of a package for housing a semiconductor device manufactured by a manufacturing method of the present invention and a plan view of an insulating base used.

2 (a) and 2 (b) are a cross-sectional view and a plan view for explaining a method for manufacturing a semiconductor element housing package of the present invention.

3 (a) and 3 (b) are a cross-sectional view and a plan view for explaining a method for manufacturing a semiconductor element housing package of the present invention.

4 (a) and 4 (b) are a cross-sectional view and a plan view for explaining a method for manufacturing a semiconductor element housing package of the present invention.

5 (a) and 5 (b) are a cross-sectional view and a plan view for explaining a method for manufacturing a semiconductor element housing package of the present invention.

6 (a) and 6 (b) are a cross-sectional view and a plan view for explaining another embodiment of the method for manufacturing a semiconductor element housing package of the present invention.

[Explanation of symbols]

 1 ... Insulating substrate 2 ... Lid 3 ... Semiconductor element 4 ... Container 5 ... Metallized wiring layer 7 ... External lead terminal 8 ... Metallized metal Layer 9 ... Plating metal layer 10 ... Connection metallization layer 11 ... Insulating layer 12 ... Connecting member

Claims (2)

[Claims] 1. A stepped recess for accommodating a semiconductor element is provided on an upper surface, and a plurality of metallized wiring layers are deposited from a step portion of the recess to an outer peripheral portion of the upper surface, and an upper surface around the recess is provided. From an insulating substrate to which a frame-shaped metallized metal layer is applied, a plurality of external lead terminals attached to the metallized wiring layer, and a lid attached to the framed metallized metal layer. A method of manufacturing a package for accommodating a semiconductor device, characterized in that the insulating substrate to which the external lead terminals are attached is manufactured by the following steps (1) to (6). . (1) A step-like recess for accommodating a semiconductor element is provided on the upper surface, and a plurality of metallized wiring layers are provided from the step portion of the recess to the outer peripheral portion of the upper surface, and a frame-shaped metallized metal layer is provided on the upper surface around the recess. Forming an insulating substrate on the upper surface of which a metallizing layer for connection connecting at least one of the metallized wiring layers and the metallized metal layer is deposited,
(2) a step of covering a part of the metallization layer for connection with an insulating layer, and (3) taking the other ends of a plurality of external lead terminals, one end of which is commonly connected to a connecting member, to each metallized wiring layer. And (4) depositing a plating metal layer on the exposed surfaces of the metallized wiring layer, the metallized metal layer, the metallization layer for connection, and the external lead terminals by electrolytic plating, and (5) the metallization for connection. A step of grinding and removing a part of the layer at a portion where the insulating layer is adhered to electrically separate the metallized wiring layer and the metallized metal layer, and (6) a connecting member for connecting the external lead terminals. Process of cutting and separating 2. A stepped concave portion for accommodating a semiconductor element is provided on the upper surface, and a plurality of metallized wiring layers are deposited from the step portion of the concave portion to the outer peripheral portion of the upper surface and the upper surface around the concave portion is covered. From an insulating substrate to which a frame-shaped metallized metal layer is applied, a plurality of external lead terminals attached to the metallized wiring layer, and a lid attached to the framed metallized metal layer. A method of manufacturing a package for accommodating a semiconductor device, characterized in that the insulating substrate to which the external lead terminals are attached is manufactured by the following steps (1) to (6). . (1) A step-like recess for accommodating a semiconductor element is provided on the upper surface, and a plurality of metallized wiring layers are provided from the step portion of the recess to the outer peripheral portion of the upper surface, and a frame-shaped metallized metal layer is provided on the upper surface around the recess. Forming an insulating substrate on the upper surface of which a metallizing layer for connection connecting at least one of the metallized wiring layers and the metallized metal layer is deposited,
(2) A step of covering a part of the connection metallization layer with two insulating layers having a gap therebetween, and (3) the other ends of the plurality of external lead terminals whose one end is commonly connected to the connecting member. And (4) depositing a plating metal layer on the exposed surfaces of the metallized wiring layer, the metallized metal layer, the connecting metallized layer and the external lead terminals by electrolytic plating. (5) A step of grinding and removing a part of the connection metallization layer in the gap between the two insulating layers to electrically separate the metallization wiring layer and the metallization metal layer, and (6) each of the external leads. Process of cutting and separating terminals from connecting members