JPH09175810A5 - - Google Patents

Info

Publication number
JPH09175810A5
JPH09175810A5 JP1996324310A JP32431096A JPH09175810A5 JP H09175810 A5 JPH09175810 A5 JP H09175810A5 JP 1996324310 A JP1996324310 A JP 1996324310A JP 32431096 A JP32431096 A JP 32431096A JP H09175810 A5 JPH09175810 A5 JP H09175810A5
Authority
JP
Japan
Prior art keywords
coating
hydrogen silsesquioxane
silsesquioxane resin
electron beam
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1996324310A
Other languages
English (en)
Japanese (ja)
Other versions
JP4015214B2 (ja
JPH09175810A (ja
Filing date
Publication date
Priority claimed from US08/566,820 external-priority patent/US5609925A/en
Application filed filed Critical
Publication of JPH09175810A publication Critical patent/JPH09175810A/ja
Publication of JPH09175810A5 publication Critical patent/JPH09175810A5/ja
Application granted granted Critical
Publication of JP4015214B2 publication Critical patent/JP4015214B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP32431096A 1995-12-04 1996-12-04 電子ビームによる水素シルセスキオキサン樹脂の硬化 Expired - Fee Related JP4015214B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/566,820 US5609925A (en) 1995-12-04 1995-12-04 Curing hydrogen silsesquioxane resin with an electron beam
US08/566820 1995-12-04

Publications (3)

Publication Number Publication Date
JPH09175810A JPH09175810A (ja) 1997-07-08
JPH09175810A5 true JPH09175810A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2004-10-07
JP4015214B2 JP4015214B2 (ja) 2007-11-28

Family

ID=24264508

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32431096A Expired - Fee Related JP4015214B2 (ja) 1995-12-04 1996-12-04 電子ビームによる水素シルセスキオキサン樹脂の硬化

Country Status (5)

Country Link
US (1) US5609925A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0778612B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP4015214B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100454618B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE69637166T2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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EP0860462A3 (en) * 1997-02-24 1999-04-21 Dow Corning Toray Silicone Company Limited Composition and method for the formation of silica thin films
US6080526A (en) * 1997-03-24 2000-06-27 Alliedsignal Inc. Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6743856B1 (en) 1997-04-21 2004-06-01 Honeywell International Inc. Synthesis of siloxane resins
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6015457A (en) * 1997-04-21 2000-01-18 Alliedsignal Inc. Stable inorganic polymers
EP0881668A3 (en) 1997-05-28 2000-11-15 Dow Corning Toray Silicone Company, Ltd. Deposition of an electrically insulating thin film with a low dielectric constant
SG71147A1 (en) * 1997-08-29 2000-03-21 Dow Corning Toray Silicone Method for forming insulating thin films
US6042994A (en) * 1998-01-20 2000-03-28 Alliedsignal Inc. Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US6177143B1 (en) * 1999-01-06 2001-01-23 Allied Signal Inc Electron beam treatment of siloxane resins
US6361837B2 (en) 1999-01-15 2002-03-26 Advanced Micro Devices, Inc. Method and system for modifying and densifying a porous film
US6440550B1 (en) * 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US6472076B1 (en) 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6582777B1 (en) * 2000-02-17 2003-06-24 Applied Materials Inc. Electron beam modification of CVD deposited low dielectric constant materials
JP2001291427A (ja) * 2000-04-06 2001-10-19 Dow Corning Toray Silicone Co Ltd 電気絶縁性薄膜形成性樹脂組成物、および電気絶縁性薄膜の形成方法
US6444136B1 (en) * 2000-04-25 2002-09-03 Newport Fab, Llc Fabrication of improved low-k dielectric structures
US7063919B2 (en) * 2002-07-31 2006-06-20 Mancini David P Lithographic template having a repaired gap defect method of repair and use
TWI240959B (en) 2003-03-04 2005-10-01 Air Prod & Chem Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US7098149B2 (en) * 2003-03-04 2006-08-29 Air Products And Chemicals, Inc. Mechanical enhancement of dense and porous organosilicate materials by UV exposure
JP2006519473A (ja) * 2003-03-04 2006-08-24 ダウ・コーニング・コーポレイション 有機発光ダイオード
US7282241B2 (en) * 2003-04-22 2007-10-16 International Business Machines Corporation Patterned, high surface area substrate with hydrophilic/hydrophobic contrast, and method of use
US7112617B2 (en) * 2003-04-22 2006-09-26 International Business Machines Corporation Patterned substrate with hydrophilic/hydrophobic contrast, and method of use
EP1475668A1 (en) * 2003-05-09 2004-11-10 ASML Netherlands B.V. Method of preparing components for a lithographic apparatus
FR2872503B1 (fr) * 2004-07-05 2006-09-22 Commissariat Energie Atomique Procede de fabrication d'une ebauche de biopuce, ebauche et biopuce
FR2897981B1 (fr) * 2006-02-24 2008-05-30 St Microelectronics Crolles 2 Procede de fabrication de transistor et transistor
US7803668B2 (en) 2006-02-24 2010-09-28 Stmicroelectronics (Crolles 2) Sas Transistor and fabrication process
JP5149512B2 (ja) * 2007-02-02 2013-02-20 東レ・ダウコーニング株式会社 液状硬化性組成物、コーテイング方法、無機質基板および半導体装置
US20080206602A1 (en) * 2007-02-28 2008-08-28 Katine Jordan A Nanoimprinting of topography for patterned magnetic media
WO2008144923A1 (en) * 2007-05-31 2008-12-04 The Governors Of The University Of Alberta Nc-si/sio2 coatings and direct lithographic patterning thereof
US9453109B2 (en) 2012-12-21 2016-09-27 3M Innovative Properties Company Curable silsesquioxane polymers, compositions, articles, and methods
US20140178698A1 (en) 2012-12-21 2014-06-26 3M Innovative Properties Company Curable silsesquioxane polymers, compositions, articles, and methods
US9741918B2 (en) 2013-10-07 2017-08-22 Hypres, Inc. Method for increasing the integration level of superconducting electronics circuits, and a resulting circuit
US10066123B2 (en) 2013-12-09 2018-09-04 3M Innovative Properties Company Curable silsesquioxane polymers, compositions, articles, and methods
WO2015195355A1 (en) 2014-06-20 2015-12-23 3M Innovative Properties Company Adhesive compositions comprising a silsesquioxane polymer crosslinker, articles and methods
US10370564B2 (en) 2014-06-20 2019-08-06 3M Innovative Properties Company Adhesive compositions comprising a silsesquioxane polymer crosslinker, articles and methods
US9957358B2 (en) 2014-09-22 2018-05-01 3M Innovative Properties Company Curable polymers comprising silsesquioxane polymer core silsesquioxane polymer outer layer, and reactive groups
US9957416B2 (en) 2014-09-22 2018-05-01 3M Innovative Properties Company Curable end-capped silsesquioxane polymer comprising reactive groups
EP3671812B1 (en) * 2018-12-19 2022-02-09 IMEC vzw A method for bonding and interconnecting semiconductor chips

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CH492948A (fr) 1968-09-13 1970-06-30 Rador S A Bande pour l'obtention d'un élément barbelé
US3615272A (en) 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
US4041190A (en) * 1971-06-29 1977-08-09 Thomson-Csf Method for producing a silica mask on a semiconductor substrate
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JPS59178749A (ja) 1983-03-30 1984-10-11 Fujitsu Ltd 配線構造体
JPS6086017A (ja) 1983-10-17 1985-05-15 Fujitsu Ltd ポリハイドロジエンシルセスキオキサンの製法
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US5336532A (en) * 1989-02-21 1994-08-09 Dow Corning Corporation Low temperature process for the formation of ceramic coatings
US4999397A (en) 1989-07-28 1991-03-12 Dow Corning Corporation Metastable silane hydrolyzates and process for their preparation
US5010159A (en) 1989-09-01 1991-04-23 Dow Corning Corporation Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol
US5116637A (en) * 1990-06-04 1992-05-26 Dow Corning Corporation Amine catalysts for the low temperature conversion of silica precursors to silica
US5262201A (en) * 1990-06-04 1993-11-16 Dow Corning Corporation Low temperature process for converting silica precursor coatings to ceramic silica coatings by exposure to ammonium hydroxide or an environment to which water vapor and ammonia vapor have been added
US5059448A (en) * 1990-06-18 1991-10-22 Dow Corning Corporation Rapid thermal process for obtaining silica coatings
US5063267A (en) 1990-11-28 1991-11-05 Dow Corning Corporation Hydrogen silsesquioxane resin fractions and their use as coating materials
US5238787A (en) * 1991-04-22 1993-08-24 Dow Corning Corporation Photodelineable coatings from hydrogen silsesquioxane resin
US5145723A (en) * 1991-06-05 1992-09-08 Dow Corning Corporation Process for coating a substrate with silica
US5436029A (en) * 1992-07-13 1995-07-25 Dow Corning Corporation Curing silicon hydride containing materials by exposure to nitrous oxide
CA2104340A1 (en) * 1992-08-31 1994-03-01 Grish Chandra Hermetic protection for integrated circuits
US5441765A (en) * 1993-09-22 1995-08-15 Dow Corning Corporation Method of forming Si-O containing coatings
US5530293A (en) * 1994-11-28 1996-06-25 International Business Machines Corporation Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits
JP3584186B2 (ja) * 1999-09-24 2004-11-04 エア・ウォーター株式会社 深冷ガス分離装置
KR100510872B1 (ko) * 2003-01-23 2005-08-26 한국타이어 주식회사 공기입 래디얼 타이어

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