JPH0880453A - Electrostatic chuck for dust collecting - Google Patents
Electrostatic chuck for dust collectingInfo
- Publication number
- JPH0880453A JPH0880453A JP21985294A JP21985294A JPH0880453A JP H0880453 A JPH0880453 A JP H0880453A JP 21985294 A JP21985294 A JP 21985294A JP 21985294 A JP21985294 A JP 21985294A JP H0880453 A JPH0880453 A JP H0880453A
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic chuck
- substrate
- particles
- collection
- dust
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、特に半導体製造工程に
おいて発生するゴミ等のパーティクルを捕集するための
集塵用静電チャックに関し、さらには空気清浄器等の大
気中のゴミを捕集するための集塵用静電チャックに関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck for collecting dust particularly for collecting particles such as dust generated in a semiconductor manufacturing process, and further collecting dust in the atmosphere such as an air purifier. The present invention relates to an electrostatic chuck for collecting dust.
【０００２】[0002]
【従来の技術】半導体装置の製造工程中、エッチングや
ＣＶＤ等の工程では半導体ウェハを真空チャンバー内で
処理することが行われているが、この工程でパーティク
ルと呼ばれる微小なゴミが発生する。2. Description of the Related Art Semiconductor wafers are processed in a vacuum chamber during processes such as etching and CVD during the manufacturing process of semiconductor devices. In this process, minute dust called particles is generated.
【０００３】例えば、半導体ウェハを乗せたテーブルを
レール上で移動させたり、半導体ウェハを載置したハン
ドリングアームを回転させるような場合に、摺動部分の
摩耗により、金属粉等のパーティクルが生じる。また、
プラズマを用いた処理を行う場合は、治具等がプラズマ
で侵されてパーティクルが生じる。For example, when a table on which a semiconductor wafer is placed is moved on a rail or a handling arm on which the semiconductor wafer is placed is rotated, particles such as metal powder are generated due to wear of the sliding portion. Also,
When processing using plasma, a jig or the like is invaded by the plasma to generate particles.
【０００４】このパーティクルが半導体ウェハ上の配線
に付着するとショートして不良の原因となってしまうた
め、パーティクルを除去するクリーニングが行われてい
る。具体的には、作業工程が終了した後にエッチングを
行ったり、装置を分解して薬品処理することによって真
空チャンバー内のパーティクルを除去していた。When the particles adhere to the wiring on the semiconductor wafer, they cause a short circuit and cause a defect. Therefore, cleaning for removing the particles is performed. Specifically, the particles in the vacuum chamber have been removed by performing etching after the work process is completed or by disassembling the apparatus and treating with chemicals.
【０００５】[0005]
【発明が解決しようとする課題】ところが、上記のよう
なクリーニング方法では、工程終了時にしかウェハの除
去を行っていなかったため、作業工程中に生じるパーテ
ィクルを除去することができなかった。そして、作業工
程中に生じるパーティクルを除去する適当な手段がない
ため、微量のパーティクルが半導体ウェハに悪影響を及
ぼすことは避けられないという問題点があった。However, in the above-mentioned cleaning method, since the wafer is removed only at the end of the process, the particles generated during the working process cannot be removed. Further, since there is no suitable means for removing particles generated during the working process, there is a problem that it is inevitable that a small amount of particles adversely affect the semiconductor wafer.
【０００６】[0006]
【課題を解決するための手段】上記に鑑みて本発明は、
誘電体中に電極を埋設してなる静電チャックの表面に捕
集基板を載置し、上記捕集基板にてパーティクルを捕集
するようにして集塵用静電チャックを構成したものであ
る。In view of the above, the present invention provides:
An electrostatic chuck for collecting dust is constructed by placing a collection substrate on the surface of an electrostatic chuck having electrodes embedded in a dielectric, and collecting particles by the collection substrate. .
【０００７】また、本発明は、上記捕集基板としてシリ
コン基板を用い、半導体製造工程で用いるようにしたこ
とを特徴とする。Further, the present invention is characterized in that a silicon substrate is used as the collection substrate and is used in a semiconductor manufacturing process.
【０００８】さらに、本発明は、上記捕集基板に多数の
孔、溝等の凹部を備えたことを特徴とする。Further, the present invention is characterized in that the collection substrate is provided with a large number of recesses such as holes and grooves.
【０００９】[0009]
【作用】本発明によれば、静電チャック内部の電極に電
圧を印加して捕集基板を吸着すれば、この捕集基板には
電荷が生じるため、この静電気力でパーティクルを吸着
することができる。特に、上記捕集基板としてシリコン
基板を用いれば、半導体ウェハに悪影響を及ぼさないこ
とから、半導体製造工程中における真空チャンバー内の
パーティクル除去に用いることができる。According to the present invention, when a voltage is applied to the electrodes inside the electrostatic chuck to attract the collecting substrate, electric charges are generated on the collecting substrate, and thus particles can be attracted by the electrostatic force. it can. In particular, if a silicon substrate is used as the collection substrate, it does not adversely affect the semiconductor wafer, and therefore can be used for removing particles in the vacuum chamber during the semiconductor manufacturing process.
【００１０】また、捕集基板に多数の孔、溝等の凹部を
備えることによって、基板の表面積を大きくして吸着量
を増やすことができる。Further, by providing the collection substrate with a large number of holes, recesses such as grooves, the surface area of the substrate can be increased and the amount of adsorption can be increased.
【００１１】[0011]
【実施例】以下本発明の実施例を説明する。EXAMPLES Examples of the present invention will be described below.
【００１２】図１、２に示すように、本発明の集塵用静
電チャックは、板状の誘電体１に内部電極２を埋設し、
その上面１ａに捕集基板３を載置したものである。そし
て、該捕集基板３と内部電極２間に電源４より電圧を印
加すれば、誘電体１が単極型の静電チャックとして作用
し、上面１ａに捕集基板３を吸着することができる。こ
のとき、捕集基板３には誘電分極が生じ、その表面３ａ
にはプラスまたはマイナスの電荷が発生することになる
ため、この静電気力により空中のパーティクル５を表面
３ａに吸着し捕集することができるのである。As shown in FIGS. 1 and 2, in the electrostatic chuck for dust collection of the present invention, an internal electrode 2 is embedded in a plate-shaped dielectric 1.
The collection substrate 3 is placed on the upper surface 1a. When a voltage is applied from the power source 4 between the collection substrate 3 and the internal electrode 2, the dielectric 1 acts as a monopolar electrostatic chuck, and the collection substrate 3 can be attracted to the upper surface 1a. . At this time, dielectric polarization occurs in the collection substrate 3, and its surface 3a
Since a positive or negative electric charge is generated in the air, particles 5 in the air can be adsorbed and collected on the surface 3a by this electrostatic force.
【００１３】なお、上記誘電体１と内部電極２だけでも
吸着力は生じるが、パーティクル５を捕集するほどの強
い力は生じない。そこで、捕集基板３を載置することに
より、この捕集基板３上に多くの電荷を発生させ、パー
ティクル５を捕集できるような大きな吸着力を得られる
のである。また、上記捕集基板３には多数の孔３ｂを備
えることにより表面積を増大させ、パーティクル５の吸
着量を多くしてある。さらに、捕集基板３で捕集したパ
ーティクル５は、作業終了後に捕集基板３を薬品でクリ
ーニングしたり、あるいは新しい捕集基板３に代えてし
まえば簡単に除去することができる。It should be noted that the dielectric force and the internal electrode 2 alone produce an attractive force, but do not produce a strong force enough to collect the particles 5. Therefore, by placing the collection substrate 3, a large amount of electric charge is generated on the collection substrate 3 and a large adsorption force capable of collecting the particles 5 can be obtained. Further, the collection substrate 3 is provided with a large number of holes 3b to increase the surface area and increase the adsorption amount of the particles 5. Further, the particles 5 collected by the collection substrate 3 can be easily removed by cleaning the collection substrate 3 with a chemical after the work is completed or replacing the collection substrate 3 with a new collection substrate 3.
【００１４】この集塵用静電チャックを半導体製造装置
の真空チャンバー内に設置すれば、作業工程中に生じる
パーティクル５を捕集することができ、半導体ウェハに
悪影響を及ぼすことを防止できる。なお、本発明の集塵
用静電チャックは、パーティクル５の生じやすい場所の
みに設置すればよいが、例えば真空チャンバーの壁面全
体に設置することも可能である。If this dust collecting electrostatic chuck is installed in the vacuum chamber of the semiconductor manufacturing apparatus, it is possible to collect the particles 5 generated during the working process and prevent the semiconductor wafer from being adversely affected. It should be noted that the dust collecting electrostatic chuck of the present invention may be installed only in a place where the particles 5 are likely to be generated, but it can also be installed on the entire wall surface of the vacuum chamber, for example.
【００１５】また、図２には単極型の静電チャックとな
る構造を示したが、図３に示すような双極型静電チャッ
クの構造とすることもできる。即ち、誘電体１に複数の
内部電極２、２を埋設し、これらの内部電極２、２間に
電源４より電圧を印加して上面１ａに捕集基板３を吸着
させ、この捕集基板３上に電荷を発生させて、その静電
気力によりパーティクル５を吸着し捕集することができ
る。2 shows a structure of a single-pole type electrostatic chuck, it may have a structure of a bipolar type electrostatic chuck as shown in FIG. That is, a plurality of internal electrodes 2 and 2 are embedded in the dielectric 1, and a voltage is applied between the internal electrodes 2 and 2 by a power source 4 to adsorb the collecting substrate 3 on the upper surface 1a. It is possible to generate an electric charge on the upper side and to adsorb and collect the particles 5 by the electrostatic force.
【００１６】さらに、他の実施例として、図４に示すよ
うに誘電体１及び捕集基板３を角型とすることもでき、
このような形状とすれば真空チャンバーの壁面全体に集
塵用静電チャックを設置することが容易となる。また、
この実施例では、捕集基板３に複数の角形状の有底の孔
３ｂを形成して表面積を増大してある。Further, as another embodiment, as shown in FIG. 4, the dielectric 1 and the collection substrate 3 may be square,
With such a shape, it becomes easy to install the electrostatic chuck for dust collection on the entire wall surface of the vacuum chamber. Also,
In this embodiment, a plurality of square bottomed holes 3b are formed in the collection substrate 3 to increase the surface area.
【００１７】このように基板３には孔３ｂや溝などの凹
部を形成したり、あるいはこの凹部をメッシュ形状やハ
ニカム形状として表面積を大きくしておくことが好まし
い。例えば孔３ｂを形成する場合、その直径は０．０５
〜５ｍｍとし、孔３ｂの表面３ａ中に占める面積の割合
を３０〜７０％としておけば良い。As described above, it is preferable that the substrate 3 is formed with a recess such as a hole 3b or a groove, or the recess is formed in a mesh shape or a honeycomb shape to have a large surface area. For example, when forming the hole 3b, its diameter is 0.05
˜5 mm, and the ratio of the area occupied by the surface of the hole 3b to the surface 3a is 30 to 70%.
【００１８】以上の実施例において、誘電体１の材質と
してはポリイミド等の樹脂でも良いが耐食性等の点でセ
ラミックスを用いることが好ましい。具体的には、アル
ミナ、炭化珪素、窒化珪素、窒化アルミニウム、チタン
酸カルシウム、チタン酸バリウム等を主成分とし、それ
ぞれ所定の焼結助剤等を含むセラミックスを用いる。あ
るいは、アルミナの単結晶体であるサファイアを用いて
も良い。In the above embodiments, the material of the dielectric 1 may be resin such as polyimide, but it is preferable to use ceramics from the viewpoint of corrosion resistance and the like. Specifically, ceramics containing alumina, silicon carbide, silicon nitride, aluminum nitride, calcium titanate, barium titanate or the like as a main component and a predetermined sintering aid or the like are used. Alternatively, sapphire, which is a single crystal of alumina, may be used.
【００１９】また、内部電極２の材質としては、パラジ
ウム（Ｐｄ）、タングステン（Ｗ）等の導電体を用い
る。そして、上述したように単極型、双極型のいずれで
も良いが単極型の方が吸着力を大きくすることができ
る。As the material of the internal electrode 2, a conductor such as palladium (Pd) or tungsten (W) is used. As described above, either the monopolar type or the bipolar type may be used, but the monopolar type can increase the attraction force.
【００２０】さらに、捕集基板３の材質としては、体積
固有抵抗１０6 Ω・ｃｍ以下の導体または半導体であれ
ば良く、具体的にはアルミニウムやシリコン等を用い
る。特に半導体製造工程で用いる場合には、半導体ウェ
ハに悪影響を与えないようにシリコン基板を用いること
が好ましい。Further, the material of the collection substrate 3 may be a conductor or semiconductor having a volume resistivity of 10 6 Ω · cm or less, and specifically, aluminum, silicon or the like is used. Particularly when used in a semiconductor manufacturing process, it is preferable to use a silicon substrate so as not to adversely affect the semiconductor wafer.
【００２１】また、上記実施例では半導体製造工程での
用途についてのみ説明したが、本発明の集塵用静電チャ
ックは、その他に空気清浄器等の用途にも用いることが
できる。Further, although the above-mentioned embodiments have been described only for use in the semiconductor manufacturing process, the electrostatic chuck for dust collection of the present invention can be used for other uses such as an air cleaner.
【００２２】例えば図５に示すように、本発明の集塵用
静電チャック１０を容器１１内に設置し、ファン１２で
空気を吸入すれば、空気中のゴミを捕集することがで
き、空気清浄器として用いることができる。また、図示
していないが、病院の酸素吸入器等に設置すれば、患者
へ送る酸素中のゴミ等を除去することができる。For example, as shown in FIG. 5, if the dust collecting electrostatic chuck 10 of the present invention is installed in a container 11 and air is sucked in by a fan 12, dust in the air can be collected. It can be used as an air purifier. Although not shown, if installed in an oxygen inhaler or the like of a hospital, it is possible to remove dust and the like in oxygen sent to the patient.
【００２３】これらの用途においては、フィルターを用
いてゴミ等を除去することも可能であるが、フィルター
の場合はすぐに目詰まりして空気が送りにくくなるとい
う問題点がある。これに対し、本発明の集塵用静電チャ
ックを用いれば目詰まりの恐れはない。In these applications, it is possible to remove dusts and the like by using a filter, but in the case of a filter, there is a problem that it becomes clogged immediately and it becomes difficult to send air. On the other hand, if the dust collecting electrostatic chuck of the present invention is used, there is no risk of clogging.
【００２４】実験例 ここで、本発明の集塵用静電チャックを試作し、パーテ
ィクルを捕集する効果を確認する実験を行った。本発明
実施例として、誘電体１の材質はチタン酸カルシウム
（ＣａＴｉＯ3 ）とし、捕集基板３はシリコン基板で直
径１ｍｍの孔３ａを多数形成して、図１、２に示す集塵
用静電チャックを試作した。 Experimental Example An electrostatic chuck for dust collection according to the present invention was prototyped and an experiment was conducted to confirm the effect of collecting particles. In the embodiment of the present invention, the material of the dielectric material 1 is calcium titanate (CaTiO 3 ), and the collection substrate 3 is a silicon substrate and a large number of holes 3a having a diameter of 1 mm are formed, and the collection substrate 3 shown in FIGS. An electric chuck was prototyped.
【００２５】この集塵用静電チャックを、半導体製造工
程におけるエッチング工程の真空チャンバー内に２個設
置した。また比較例として、同じ工程で集塵用静電チャ
ックを設置しなかった場合とともに、半導体ウェハの不
良発生率を比較した。Two electrostatic chucks for collecting dust were installed in the vacuum chamber of the etching process in the semiconductor manufacturing process. In addition, as a comparative example, the defect occurrence rates of the semiconductor wafers were compared with the case where the dust collecting electrostatic chuck was not installed in the same process.
【００２６】その結果、本発明の集塵用静電チャックを
設置しない場合の不良発生率が１０％であったのに対
し、本発明の集塵用静電チャックを設置すれば不良発生
率を０．１％に低減することができた。As a result, the failure occurrence rate was 10% when the dust collecting electrostatic chuck of the present invention was not installed, whereas the failure occurrence rate was found when the dust collecting electrostatic chuck of the present invention was installed. It could be reduced to 0.1%.
【００２７】[0027]
【発明の効果】以上のように本発明によれば、誘電体中
に電極を埋設してなる静電チャックの表面に捕集基板を
載置して集塵用静電チャックを構成したことによって、
内部電極に電圧を印加して捕集基板上に電荷を発生さ
せ、この静電気力でパーティクルを吸着することができ
る。As described above, according to the present invention, the dust collecting electrostatic chuck is constructed by placing the collecting substrate on the surface of the electrostatic chuck in which the electrodes are embedded in the dielectric. ,
A voltage can be applied to the internal electrodes to generate charges on the collection substrate, and particles can be adsorbed by this electrostatic force.
【００２８】特に上記捕集基板としてシリコン基板を用
い、半導体製造工程で用いることにより、例えば真空チ
ャンバー内で発生するパーティクルを吸着して捕集する
ことができ、半導体ウェハへの悪影響を防止することが
できる。また、捕集したパーティクルは捕集基板を薬品
処理したり、新しい基板と交換することにより容易に除
去することができる。In particular, by using a silicon substrate as the collecting substrate and using it in a semiconductor manufacturing process, for example, particles generated in a vacuum chamber can be adsorbed and collected, and an adverse effect on a semiconductor wafer can be prevented. You can Further, the collected particles can be easily removed by chemically treating the collecting substrate or exchanging a new substrate.
【図１】本発明の集塵用静電チャックを示す斜視図であ
る。FIG. 1 is a perspective view showing a dust collecting electrostatic chuck of the present invention.
【図２】図１中のＸ−Ｘ線断面図である。FIG. 2 is a sectional view taken along line XX in FIG.
【図３】本発明の他の実施例を示す縦断面図である。FIG. 3 is a vertical sectional view showing another embodiment of the present invention.
【図４】本発明の他の実施例を示す斜視図である。FIG. 4 is a perspective view showing another embodiment of the present invention.
【図５】本発明の集塵用静電チャックを用いた空気清浄
器を示す断面図である。FIG. 5 is a cross-sectional view showing an air purifier using the electrostatic chuck for dust collection of the present invention.
１：誘電体 ２：内部電極 ３：捕集基板 ４：電源 ５：パーティクル 1: Dielectric 2: Internal electrode 3: Collection substrate 4: Power supply 5: Particle
Claims (3)
クの上面に捕集基板を載置して成り、上記内部電極に電
圧を印加することにより捕集基板に電荷を発生させてパ
ーティクルを捕集するようにした集塵用静電チャック。1. A collection substrate is placed on the upper surface of an electrostatic chuck in which an internal electrode is embedded in a dielectric material, and a voltage is applied to the internal electrode to generate charges on the collection substrate to generate particles. An electrostatic chuck for collecting dust.
体製造工程で用いることを特徴とする請求項１記載の集
塵用静電チャック。2. The electrostatic chuck for collecting dust according to claim 1, wherein the collection substrate is a silicon substrate and is used in a semiconductor manufacturing process.
えてなる請求項１記載の集塵用静電チャック。3. The electrostatic chuck for dust collection according to claim 1, wherein the collection substrate is provided with a large number of recesses such as holes and grooves.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21985294A JP3406701B2 (en) | 1994-09-14 | 1994-09-14 | Electrostatic chuck for dust collection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21985294A JP3406701B2 (en) | 1994-09-14 | 1994-09-14 | Electrostatic chuck for dust collection |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0880453A true JPH0880453A (en) | 1996-03-26 |
| JP3406701B2 JP3406701B2 (en) | 2003-05-12 |
Family
ID=16742078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21985294A Expired - Fee Related JP3406701B2 (en) | 1994-09-14 | 1994-09-14 | Electrostatic chuck for dust collection |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3406701B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6440486B2 (en) * | 1996-04-09 | 2002-08-27 | Delsys Pharmaceutical Corp. | Method of depositing particles with an electrostatic chuck |
| KR100575847B1 (en) * | 2005-04-29 | 2006-05-03 | 이앙구 | Method collection residual products for fpd and semiconducor |
| WO2007007731A1 (en) * | 2005-07-12 | 2007-01-18 | Creative Technology Corporation | Apparatus for removing foreign material from substrate and method for removing foreign material from substrate |
| JP2009208041A (en) * | 2008-03-06 | 2009-09-17 | Panasonic Corp | Electric precipitator |
| CN106150033A (en) * | 2016-06-28 | 2016-11-23 | 浙江百恺纺织有限公司 | A kind of electrostatic precipitation cloth |
-
1994
- 1994-09-14 JP JP21985294A patent/JP3406701B2/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6440486B2 (en) * | 1996-04-09 | 2002-08-27 | Delsys Pharmaceutical Corp. | Method of depositing particles with an electrostatic chuck |
| US6670038B2 (en) | 1996-04-09 | 2003-12-30 | Delsys Pharmaceutical | Method of depositing particles with an electrostatic chuck |
| KR100575847B1 (en) * | 2005-04-29 | 2006-05-03 | 이앙구 | Method collection residual products for fpd and semiconducor |
| WO2007007731A1 (en) * | 2005-07-12 | 2007-01-18 | Creative Technology Corporation | Apparatus for removing foreign material from substrate and method for removing foreign material from substrate |
| JPWO2007007731A1 (en) * | 2005-07-12 | 2009-01-29 | 株式会社クリエイティブ テクノロジー | Substrate foreign matter removing apparatus and substrate foreign matter removing method |
| JP4616346B2 (en) * | 2005-07-12 | 2011-01-19 | 株式会社クリエイティブ テクノロジー | Substrate foreign matter removing apparatus and substrate foreign matter removing method |
| US8196594B2 (en) | 2005-07-12 | 2012-06-12 | Creative Technology Corporation | Apparatus for removing foreign material from substrate and method for removing foreign material from substrate |
| TWI420579B (en) * | 2005-07-12 | 2013-12-21 | Creative Tech Corp | And a foreign matter removing method for a substrate |
| JP2009208041A (en) * | 2008-03-06 | 2009-09-17 | Panasonic Corp | Electric precipitator |
| CN106150033A (en) * | 2016-06-28 | 2016-11-23 | 浙江百恺纺织有限公司 | A kind of electrostatic precipitation cloth |
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| JP3406701B2 (en) | 2003-05-12 |
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