JPH0870094A - Hybrid ic and its manufacture - Google Patents

Hybrid ic and its manufacture

Info

Publication number
JPH0870094A
JPH0870094A JP22737494A JP22737494A JPH0870094A JP H0870094 A JPH0870094 A JP H0870094A JP 22737494 A JP22737494 A JP 22737494A JP 22737494 A JP22737494 A JP 22737494A JP H0870094 A JPH0870094 A JP H0870094A
Authority
JP
Japan
Prior art keywords
resin
electronic components
hybrid
chip
wiring conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22737494A
Other languages
Japanese (ja)
Other versions
JP3447385B2 (en
Inventor
Motoyasu Tanabe
素尉 田辺
Takahiro Nagano
孝浩 永野
Hideo Ota
秀夫 太田
Toru Sasayama
徹 笹山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP22737494A priority Critical patent/JP3447385B2/en
Publication of JPH0870094A publication Critical patent/JPH0870094A/en
Application granted granted Critical
Publication of JP3447385B2 publication Critical patent/JP3447385B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor

Landscapes

  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To eliminate inner wiring board, realize a thin light device of high density mounting, and improve reliability of circuit connection. CONSTITUTION: A plurality of various kinds of chip circuit components 2 are arranged so as to expose the electrode surfaces on the bottom surface. In this state, the components are molded and fixed with resin 14. Specified wiring conductors 15, 16 are formed on the bottom surface and in the recessed part formed on the upper surface of the mold resin. A semiconductor chip 18 is fixed to the recessed part and sealed with resin 19. Through hole part 17 is cut out and turned into' an outer connection terminal part. Insulating layers 30 are formed on the upper surface and the bottom surface.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はハイブリッドICおよび
その製造方法に関し、特に、複数の能動素子,回路素子
および集積回路素子が一体化形成され、増幅,発振など
の回路機能を有するハイブリッドICとその製造方法に
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid IC and a method of manufacturing the same, and more particularly to a hybrid IC having a plurality of active elements, circuit elements and integrated circuit elements integrally formed and having a circuit function such as amplification and oscillation, and the same. The present invention relates to a manufacturing method.

【0002】[0002]

【従来の技術】従来のハイブリッドICは、例えば図1
4の一部分解斜視図(a)と組立状態の断面図(b)に
示すように、半導体チップや抵抗,コンデンサなどの回
路素子等の複数の各種電子部品2を半田付けにより配線
基板1に実装し、この実装された配線基板1を金属製の
底箱3および蓋箱4から成るシールドケースに収納して
構成されている。なお、図中の5はマザーボード(親基
板)等の他の配線基板に接続するための接続ピンであ
る。また、図15は他の従来例の一部分解斜視図を示す
もので、予め配線パターン6が形成されたセラミック等
の絶縁材料から成る箱状のパッケージ7に各種電子部品
2を実装し、配線パターン6と電子部品2との接続は半
田付け、或いは導電樹脂により行い、半導体素子につい
てはワイヤボンディングによりワイヤ接続等を行ってい
る。なお、図中の8は箱状パッケージ7の蓋である。
2. Description of the Related Art A conventional hybrid IC is shown in FIG.
As shown in a partially exploded perspective view (a) of FIG. 4 and a sectional view (b) of an assembled state, a plurality of various electronic components 2 such as semiconductor chips, circuit elements such as resistors and capacitors are mounted on the wiring board 1 by soldering. The mounted wiring board 1 is housed in a shield case composed of a metal bottom box 3 and a lid box 4. In addition, reference numeral 5 in the drawing denotes a connection pin for connecting to another wiring board such as a mother board (parent board). Further, FIG. 15 is a partially exploded perspective view of another conventional example, in which various electronic components 2 are mounted on a box-shaped package 7 made of an insulating material such as ceramic in which the wiring pattern 6 is formed in advance, and the wiring pattern is formed. 6 and the electronic component 2 are connected by soldering or conductive resin, and the semiconductor element is connected by wire bonding or the like. In addition, 8 in the figure is a lid of the box-shaped package 7.

【0003】また、図16はその他の従来例の組立状態
の側面断面図を示すもので、予め配線パターン6が形成
されたアルミナ等の配線基板1に、複数の電子部品2が
半田付け等により実装されており、この複数の電子部品
2は樹脂9によりモールドされている。そしてこのハイ
ブリッドICをマザーボード等の他の配線基板に面実装
するための端子電極10が配線基板9の外縁部から導出
されている構造になっている。
FIG. 16 is a side cross-sectional view of another conventional assembly state, in which a plurality of electronic components 2 are soldered or the like to a wiring board 1 made of alumina or the like on which a wiring pattern 6 is formed in advance. The plurality of electronic components 2 are mounted and molded with resin 9. The terminal electrode 10 for surface mounting the hybrid IC on another wiring board such as a mother board is led out from the outer edge portion of the wiring board 9.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、前述し
た従来のハイブリッドICは、いずれのものも配線基板
に電子部品が実装された構成を有しており、これらのハ
イブリッドICをマザーボード等の他の配線基板に装着
する場合は、その接合部は図14〜16に示したように
接続ピンやリード線5を用いたり、配線基板のスルーホ
ール(図示していない)を半分にした形状の端子を用い
なければならず、ハイブリッドIC自体の薄型化が困難
であると共に、このハイブリッドICを使用する電子機
器の薄型化、軽量化にも限度があり、かつ接合部の十分
な信頼性を得ることができないという問題があった。本
発明は、このような従来の欠点を解決し、従来に比べて
薄型,軽量化を図り、かつ、ハイブリッドIC内の配線
基板を廃して接続箇所を少なくすることにより信頼性を
向上し、製作工程の短縮によって原価低減を図ったハイ
ブリッドICとその製造方法を提供するものである。
However, each of the above-mentioned conventional hybrid ICs has a structure in which electronic components are mounted on a wiring board, and these hybrid ICs are connected to other wirings such as a mother board. When it is mounted on a board, the connecting portion uses a connecting pin or lead wire 5 as shown in FIGS. 14 to 16, or a terminal in which a through hole (not shown) of the wiring board is halved. It is difficult to reduce the thickness of the hybrid IC itself, and there is a limit to the reduction in thickness and weight of electronic equipment using the hybrid IC, and sufficient reliability of the joint cannot be obtained. There was a problem. The present invention solves such conventional drawbacks, achieves thinner and lighter weight than conventional ones, and improves reliability by eliminating the wiring board in the hybrid IC and reducing the number of connection points. A hybrid IC and a method for manufacturing the hybrid IC, which are manufactured at reduced costs by shortening the steps.

【0005】[0005]

【課題を解決するための手段】本発明のハイブリッドI
Cは、複数のチップ電子部品と、該複数のチップ電子部
品がその電極面を底面に露出するように配置された状態
でモールドされ、上面の中央部分に凹部が設けられたモ
ールド樹脂と、該モールド樹脂の前記底面に、前記チッ
プ電子部品を接続するとともに周辺部に至るように形成
された第1の配線導体と、前記モールド樹脂の前記上面
に、前記凹部から周辺部に至るように形成された第2の
配線導体と、前記第1の配線導体の周辺部と前記第2の
配線導体の周辺部とを所定の部分で接続するとともに外
部回路に対する接続端子として形成された分割スルーホ
ールと、前記モールド樹脂の上面の前記凹部に取り付け
られ前記第2の配線導体にワイヤーボンディング接続さ
れた半導体チップと、該半導体チップとそのボンディン
グワイヤを埋設封止した封止樹脂と、上面および底面に
設けられた絶縁層とを備えたことを特徴とし、さらに、
前記絶縁層の上に金属シールド層が設けられたことを特
徴とするものである。
SUMMARY OF THE INVENTION The hybrid I of the present invention
C is a plurality of chip electronic components, a mold resin in which the plurality of chip electronic components are arranged so that their electrode surfaces are exposed at the bottom surface, and a molding resin in which a concave portion is provided in the central portion of the upper surface, A first wiring conductor is formed on the bottom surface of the molding resin so as to connect the chip electronic component and reaches the peripheral portion, and is formed on the top surface of the molding resin so as to extend from the concave portion to the peripheral portion. A second wiring conductor, a divided through hole formed as a connection terminal for connecting a peripheral portion of the first wiring conductor and a peripheral portion of the second wiring conductor at a predetermined portion and connecting to an external circuit, A semiconductor chip attached to the recess on the upper surface of the mold resin and wire-bonded to the second wiring conductor, and the semiconductor chip and its bonding wire are embedded and sealed. A sealing resin which is characterized in that a provided on the upper surface and the bottom insulating layer, further,
A metal shield layer is provided on the insulating layer.

【0006】また、本発明のハイブリッドICの製造方
法は、片面に接着剤が塗布された部品仮固定用フィルム
を、該接着面を上にしてフィルム固定用治具に載置装着
する工程と、前記部品仮固定用フィルムの接着面の所定
の位置に複数のチップ電子部品を配置して接着仮固定す
る工程と、前記複数のチップ電子部品が接着仮固定され
た部品仮固定用フィルムから前記フィルム固定用治具を
取り外す工程と、前記部品仮固定用フィルムに複数のチ
ップ電子部品が接着仮固定された側を下にして、該複数
のチップ電子部品が収容される容積の凹部と該凹部の中
央部分に凸状部を有する下型と、平板状の上型とからな
る成形型に嵌め込み樹脂により射出成形する工程と、前
記成形型から取り出され複数のチップ電子部品が樹脂成
形された状態から前記部品仮固定用フィルムを取り外す
工程と、前記部品仮固定用フィルムを取り外すことによ
り前記複数のチップ電子部品の電極が露出された底面
と、前記下型の凸部によって形成された凹部を有する上
面に所定の配線導体を形成するとともに、周辺部に該両
面の配線導体の所定の部分を接続するスルーホール導体
を形成する工程と、前記凹部に半導体チップを取り付け
る工程と、該半導体チップを樹脂封止する工程と、上面
と下面に絶縁層を形成する工程と、前記スルーホールの
中心軸を通る線で切断する工程とから構成されたことを
特徴とし、さらに、前記絶縁層の上から金属シールド層
を形成する工程を設けたことを特徴とするものである。
The method for manufacturing a hybrid IC of the present invention further comprises a step of mounting and mounting a component temporary fixing film having an adhesive applied on one side thereof on a film fixing jig with the adhesive surface facing upward. A step of disposing a plurality of chip electronic components at a predetermined position on the adhesive surface of the component temporary fixing film and temporarily fixing the same, and the film from the component temporary fixing film having the plurality of chip electronic components temporarily fixed to the adhesive. A step of removing the fixing jig, and a concave portion having a volume in which the plurality of chip electronic components are accommodated From a state in which a lower die having a convex portion in the central portion and a flat upper die are injection-molded with a resin, and a plurality of chip electronic components taken out from the die and molded with resin The step of removing the component temporary fixing film, the bottom surface where the electrodes of the plurality of chip electronic components are exposed by removing the component temporary fixing film, and the upper surface having the concave portion formed by the lower die convex portion Forming a predetermined wiring conductor on the substrate and forming a through-hole conductor for connecting predetermined portions of the wiring conductors on the both sides to the peripheral portion, attaching a semiconductor chip to the recess, and sealing the semiconductor chip with a resin. And a step of forming an insulating layer on the upper and lower surfaces, and a step of cutting along a line passing through the central axis of the through hole, further comprising a metal shield from above the insulating layer. It is characterized in that a step of forming a layer is provided.

【0007】[0007]

【実施例】図1〜図13は本発明によるハイブリッドI
Cの製造方法の製造工程を示す側面図または部分縦断面
図であり、図9に示されたものが本発明の基本構成を示
すハイブリッドICの部分縦断面図である。まず、製造
工程を図面に基づき説明する。
1 to 13 show a hybrid I according to the present invention.
FIG. 10 is a side view or a partial vertical cross-sectional view showing the manufacturing process of the manufacturing method for C, and FIG. 9 is a partial vertical cross-sectional view of the hybrid IC showing the basic configuration of the present invention. First, the manufacturing process will be described with reference to the drawings.

【0008】図1の側面図において、11は複数の半導
体素子,回路素子などのチップ電子部品を仮に固定する
ための接着剤が塗布された部品仮固定用フィルムで、そ
の材質はポリイミド樹脂,PPS樹脂などである。また
その上面に塗布される接着剤はシリコン接着剤などが用
いられる。12はフィルム固定用ピン13が設けられ、
部品仮固定用フィルム11を固定するフィルム固定用治
具であり、電子部品のマウントが準備される。
In the side view of FIG. 1, reference numeral 11 denotes a component temporary fixing film coated with an adhesive for temporarily fixing chip electronic components such as a plurality of semiconductor elements and circuit elements, the material of which is polyimide resin, PPS. Resin, etc. Further, a silicon adhesive or the like is used as the adhesive applied to the upper surface thereof. 12 is provided with a film fixing pin 13,
This is a film fixing jig for fixing the component temporary fixing film 11, and a mount for electronic components is prepared.

【0009】次に、図2の側面図に示すように、部品仮
固定用フィルム11上の所定の位置に、トランジスタ,
ダイオードなどの半導体チップやチップ抵抗,チップコ
ンデンサなどの複数の種々の電子部品2を配置して接着
仮固定する。このとき、電子部品2の電極面が部品仮固
定用フィルム11側に接合するように配置される。
Next, as shown in the side view of FIG. 2, the transistor,
A plurality of various electronic components 2 such as a semiconductor chip such as a diode, a chip resistor, and a chip capacitor are arranged and adhesively fixed. At this time, the electrode surface of the electronic component 2 is arranged so as to be bonded to the component temporary fixing film 11 side.

【0010】次に図3の側面図に示すように、電子部品
2がマウントされた状態の部品仮固定用フィルム11か
らフィルム固定用治具12を取り外す。
Next, as shown in the side view of FIG. 3, the film fixing jig 12 is removed from the component temporary fixing film 11 on which the electronic component 2 is mounted.

【0011】そして、図4に示すように成形型20を構
成する下型21と上型22との間に、電子部品2が仮固
定された部品仮固定用フィルム11を配置する。このと
き電子部品2が仮固定された面を下にして下型21の空
間部分23に電子部品2が位置するように配置し、部品
仮固定用フィルム11側の上から平板状の上型22を載
置して部品仮固定用フィルム11の裏面に面接するよう
に挟持する。なお、24は下型21に設けられた位置決
めピンであり、部品仮固定用フィルムの位置決め穴を貫
通して、上型22のピン嵌合孔25に嵌合する。また、
下型21の側壁面には樹脂射出口26が設けられ、凹部
底面中央部分に段付き凸状部分が設けられている。
Then, as shown in FIG. 4, a component temporary fixing film 11 to which the electronic component 2 is temporarily fixed is arranged between the lower mold 21 and the upper mold 22 which form the molding die 20. At this time, the electronic component 2 is arranged so that the surface on which the electronic component 2 is temporarily fixed is faced down in the space portion 23 of the lower mold 21, and the plate-shaped upper mold 22 is placed on the component temporary fixing film 11 side. Is placed and sandwiched so as to come into contact with the back surface of the film 11 for temporarily fixing the component. Reference numeral 24 is a positioning pin provided in the lower mold 21, which penetrates the positioning hole of the film for temporarily fixing the component and fits into the pin fitting hole 25 of the upper mold 22. Also,
A resin injection port 26 is provided on the side wall surface of the lower mold 21, and a stepped convex portion is provided in the central portion of the bottom surface of the concave portion.

【0012】次に、図5の断面図に示すように、成形型
20は上型22と下型21が密接した状態で保持され、
樹脂射出口26からエポキシ樹脂などの樹脂14を注入
し、電子部品2を所定の配置状態で加圧成形によりモー
ルド固定する。
Next, as shown in the sectional view of FIG. 5, the molding die 20 is held with the upper die 22 and the lower die 21 in close contact with each other.
A resin 14 such as an epoxy resin is injected from the resin injection port 26, and the electronic component 2 is molded and fixed by pressure molding in a predetermined arrangement state.

【0013】次に、樹脂14によりモールド成形された
電子部品2と部品仮固定用フィルム11を成形型20か
ら取出し、図6の断面図に示すように電子部品2の電極
面である下面から部品仮固定用フィルム11を剥離す
る。従って、電子部品2の電極面は底面に露出されるこ
とになる。
Next, the electronic component 2 and the component temporary fixing film 11 molded by the resin 14 are taken out from the molding die 20, and the component is attached from the lower surface which is the electrode surface of the electronic component 2 as shown in the sectional view of FIG. The temporary fixing film 11 is peeled off. Therefore, the electrode surface of the electronic component 2 is exposed at the bottom surface.

【0014】図7は、配線導体形成工程で上面と下面に
配線導体が形成された状態の断面図である。下面の配線
導体15は、電子部品2の露出した電極面を接続する配
線導体であり、上面の配線導体16は頂上面から中央部
分の段差のついた凹部の底面に亘って設けられ、凹部の
底面に後工程で取付けられるICベアチップの接続用配
線導体である。頂上面から凹部の段差に至る傾斜角、及
び段差から底部に至る傾斜角は約45°に設定され、配
線導体が連続して形成できるようになっている。この配
線導体は、蒸着,メッキ,金属箔貼付け,印刷などの手
段により形成される。17はスルーホールであり、上面
の配線導体16と下面の配線導体15を接続するととも
に、最終工程でその中心軸方向に切断されて外部接続端
子となる。
FIG. 7 is a sectional view showing a state in which the wiring conductors are formed on the upper surface and the lower surface in the wiring conductor forming step. The wiring conductor 15 on the lower surface is a wiring conductor that connects the exposed electrode surface of the electronic component 2, and the wiring conductor 16 on the upper surface is provided from the top surface to the bottom surface of the stepped recessed portion in the central portion. It is a wiring conductor for connection of an IC bare chip that is attached to the bottom surface in a later step. The inclination angle from the top surface to the step of the recess and the inclination angle from the step to the bottom are set to about 45 ° so that the wiring conductor can be continuously formed. This wiring conductor is formed by means such as vapor deposition, plating, metal foil sticking, and printing. Reference numeral 17 denotes a through hole, which connects the wiring conductor 16 on the upper surface and the wiring conductor 15 on the lower surface, and is cut in the direction of the central axis thereof in the final step to become an external connection terminal.

【0015】図8は半導体ベアチップ組み込み工程で上
面の凹部に例えば、ICベアチップ18を取付けてワイ
ヤボンディングを行った状態を示す平面図(A)と断面
図(B)および底面図(C)である。上面凹部の段差の
底面からの高さは、ICベアチップ18の上面とほぼ等
しい高さに設定され、ワイヤボンディングし易いように
なっている。平面図(A)及び底面図(C)で斜線を施
した部分が配線導体16及び15である。
FIG. 8 is a plan view (A), a sectional view (B) and a bottom view (C) showing a state in which, for example, an IC bare chip 18 is attached to a concave portion on the upper surface and wire bonding is performed in the semiconductor bare chip assembling process. . The height of the step of the upper surface recess from the bottom surface is set to be substantially equal to the upper surface of the IC bare chip 18, which facilitates wire bonding. The hatched portions in the plan view (A) and the bottom view (C) are the wiring conductors 16 and 15.

【0016】図9はポッティング(封止)工程で、IC
ベアチップ18をエポキシ樹脂などの熱硬化性樹脂19
で充填した状態を示す断面図である。上面凹部の深さ
は、この状態でボンディングワイヤも十分充填され上面
に盛り上がらないように設定されている。
FIG. 9 shows a potting (sealing) process in which the IC
The bare chip 18 is replaced with a thermosetting resin 19 such as an epoxy resin.
It is sectional drawing which shows the state filled with. The depth of the upper surface concave portion is set so that the bonding wire is sufficiently filled in this state and does not rise to the upper surface.

【0017】図10は絶縁層形成工程で上面,下面に絶
縁層30が設けられた状態を示す断面図である。この絶
縁層としてエポキシ樹脂が用いられる。
FIG. 10 is a sectional view showing a state in which the insulating layer 30 is provided on the upper surface and the lower surface in the insulating layer forming step. An epoxy resin is used as this insulating layer.

【0018】図11はシールド形成工程で、絶縁層30
の上から金属シールド層31がアークスプレーによって
設けられた状態を示す断面図である。
FIG. 11 shows a shield forming step in which the insulating layer 30 is formed.
It is sectional drawing which shows the state in which the metal shield layer 31 was provided by the arc spraying from above.

【0019】以上の図1から図11までの実施例では、
一個のハイブリッドICの製造工程を模式的に示した
が、実際に生産する場合は、同種のハイブリッドICを
複数個同時に組立成形した後、ワイヤソーダイシング法
またはブレードダイシング法等によって切断分離する方
法が採用される。図12は3個のハイブリッドICを同
時に組立成形する場合の工程途中の状態を示す平面図
(A)と底面図(B)である。32は位置決め穴であ
る。
In the embodiments shown in FIGS. 1 to 11 above,
Although the manufacturing process of one hybrid IC is schematically shown, when actually manufacturing, a method of assembling and molding a plurality of hybrid ICs of the same type at the same time and then cutting and separating by a wire saw dicing method or a blade dicing method is adopted. To be done. FIG. 12 is a plan view (A) and a bottom view (B) showing a state in the middle of a process in the case of simultaneously assembling and molding three hybrid ICs. 32 is a positioning hole.

【0020】図10または図11に示した工程の後、個
々のハイブリッドICの周辺部のスルーホール17の中
心を通る線で切断される。図13は切断後の完成品の平
面図を示す。発振回路のように回路信号が他に影響を及
ぼす恐れのある場合、または低雑音増幅回路のように他
からの影響を受けるおそれのある場合、図11のシール
ド形成工程を経て完成させるとよい。例えば、PLLを
利用した周波数シンセサイザ等に本発明を適用すれば、
PLL−ICチップを上面凹部に搭載し、電圧制御発振
器(VCO)等の回路素子をモールド形成することによ
って、独立した小形の周波数シンセサイザを実現するこ
とができる。
After the step shown in FIG. 10 or FIG. 11, each hybrid IC is cut along a line passing through the center of the through hole 17 in the peripheral portion. FIG. 13 shows a plan view of the finished product after cutting. In the case where the circuit signal may affect the other such as in the oscillation circuit or in the case where the circuit signal may be affected by the other such as the low noise amplifier circuit, it is preferable to complete the shield forming process of FIG. For example, if the present invention is applied to a frequency synthesizer using a PLL,
An independent small-sized frequency synthesizer can be realized by mounting the PLL-IC chip in the concave portion on the upper surface and molding the circuit element such as the voltage controlled oscillator (VCO).

【0021】[0021]

【発明の効果】以上詳細に説明したように本発明による
ハイブリッドICは、内部に配線基板がなく、従来のよ
うに配線基板に各種電子部品が搭載されているものでな
いため、従来のハイブリッドICのようにそのパッケー
ジの一部を構成する配線基板への半田等による接続を必
要としないため、高密度実装が図れると共に、接続の信
頼性を向上させることができるものである。また、前述
したようにハイブリッドICのパッケージを構成する配
線基板を削除し得ることと相俟って薄型化や軽量化が図
られ、電子機器の小型軽量化に寄与するという極めて顕
著な効果を奏するものである。
As described in detail above, the hybrid IC according to the present invention does not have a wiring board inside and various electronic components are not mounted on the wiring board as in the conventional case. As described above, since it is not necessary to connect the wiring board forming a part of the package by soldering or the like, high-density mounting can be achieved and the connection reliability can be improved. Further, as described above, the wiring board forming the package of the hybrid IC can be eliminated, which contributes to reduction in thickness and weight, which contributes to reduction in size and weight of the electronic device. It is a thing.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明のハイブリッドICの製造工程の一部の
一実施例側面図である。
FIG. 1 is a side view of an embodiment of a part of a manufacturing process of a hybrid IC of the present invention.

【図2】本発明のハイブリッドICの製造工程の一部の
一実施例側面図である。
FIG. 2 is a side view of an embodiment of a part of the manufacturing process of the hybrid IC of the present invention.

【図3】本発明のハイブリッドICの製造工程の一部の
一実施例側面図である。
FIG. 3 is a side view of an embodiment of a part of the manufacturing process of the hybrid IC of the present invention.

【図4】本発明のハイブリッドICの製造工程の一部の
一実施例部分縦断面図である。
FIG. 4 is a partial vertical cross-sectional view of an embodiment of a part of the manufacturing process of the hybrid IC of the present invention.

【図5】本発明のハイブリッドICの製造工程の一部の
一実施例部分縦断面図である。
FIG. 5 is a partial vertical sectional view of an embodiment of a part of the manufacturing process of the hybrid IC of the present invention.

【図6】本発明のハイブリッドICの製造工程の一部の
一実施例部分縦断面図である。
FIG. 6 is a partial vertical cross-sectional view of an embodiment of a part of the manufacturing process of the hybrid IC of the present invention.

【図7】本発明のハイブリッドICの製造工程の一部の
一実施例部分縦断面図である。
FIG. 7 is a partial vertical cross-sectional view of an embodiment of a part of the manufacturing process of the hybrid IC of the present invention.

【図8】本発明のハイブリッドICの製造工程の一部の
平面図,断面図,底面図である。
FIG. 8 is a plan view, a sectional view, and a bottom view of a part of the manufacturing process of the hybrid IC of the present invention.

【図9】本発明のハイブリッドICの製造工程の一部を
示す断面図である。
FIG. 9 is a cross-sectional view showing a part of the manufacturing process of the hybrid IC of the present invention.

【図10】本発明のハイブリッドICの製造工程の一部
を示す断面図である。
FIG. 10 is a sectional view showing a part of the manufacturing process of the hybrid IC of the present invention.

【図11】本発明のハイブリッドICの製造工程の一部
を示す断面図である。
FIG. 11 is a cross-sectional view showing a part of the manufacturing process of the hybrid IC of the present invention.

【図12】本発明のハイブリッドICの製造工程の一部
を示す平面図,底面図である。
FIG. 12 is a plan view and a bottom view showing a part of the manufacturing process of the hybrid IC of the present invention.

【図13】本発明のハイブリッドICの製造工程の完成
品の平面図である。
FIG. 13 is a plan view of a completed product of the manufacturing process of the hybrid IC of the present invention.

【図14】従来のハイブリッドICの構造図である。FIG. 14 is a structural diagram of a conventional hybrid IC.

【図15】従来の他のハイブリッドICの一部分解斜視
図である。
FIG. 15 is a partially exploded perspective view of another conventional hybrid IC.

【図16】従来のその他のハイブリッドICの縦断面図
である。
FIG. 16 is a vertical cross-sectional view of another conventional hybrid IC.

【符号の説明】[Explanation of symbols]

1 配線基板 2 電子部品 3 底箱 4 蓋箱 5 リード線 6 配線パターン 7 箱状パッケージ 8 箱状パッケージ7の蓋 9 樹脂 10 端子電極 11 部品仮固定用フィルム 12 フィルム固定用治具 13 フィルム固定用ピン 14 樹脂 15,16 配線導体 17 スルーホール 18 半導体ベアチップ 19 ポッティング樹脂 20 成形型 21 下型 22 上型 23 成形型による空間部 24 位置決めピン 25 嵌合孔 26 樹脂射出口 30 絶縁層 31 シールド層 32 位置決め穴 DESCRIPTION OF SYMBOLS 1 Wiring board 2 Electronic component 3 Bottom box 4 Lid box 5 Lead wire 6 Wiring pattern 7 Box-shaped package 8 Lid of box-shaped package 9 Resin 10 Terminal electrode 11 Film for temporarily fixing parts 12 Film fixing jig 13 For film fixing Pin 14 Resin 15, 16 Wiring conductor 17 Through hole 18 Semiconductor bare chip 19 Potting resin 20 Mold 21 Lower mold 22 Upper mold 23 Space by molding mold 24 Positioning pin 25 Fitting hole 26 Resin injection port 30 Insulating layer 31 Shield layer 32 Positioning hole

フロントページの続き (72)発明者 笹山 徹 東京都中野区東中野三丁目14番20号 国際 電気株式会社内Front page continuation (72) Inventor Toru Sasayama 3-14-20 Higashi-Nakano, Nakano-ku, Tokyo Kokusai Electric Inc.

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 複数のチップ電子部品と、 該複数のチップ電子部品がその電極面を底面に露出する
ように配置された状態でモールドされ、上面の中央部分
に凹部が設けられたモールド樹脂と、 該モールド樹脂の前記底面に、前記チップ電子部品を接
続するとともに周辺部に至るように形成された第1の配
線導体と、 前記モールド樹脂の前記上面に、前記凹部から周辺部に
至るように形成された第2の配線導体と、 前記第1の配線導体の周辺部と前記第2の配線導体の周
辺部とを所定の部分で接続するとともに外部回路に対す
る接続端子として形成された分割スルーホールと、 前記モールド樹脂の上面の前記凹部に取り付けられ前記
第2の配線導体にワイヤーボンディング接続された半導
体チップと、 該半導体チップとそのボンディングワイヤを埋設封止し
た封止樹脂と、 上面および底面に設けられた絶縁層とを備えたハイブリ
ッドIC。
1. A plurality of chip electronic components, and a molding resin in which the plurality of chip electronic components are molded such that the electrode surfaces thereof are exposed at the bottom surface and a recess is provided in the central portion of the upper surface. A first wiring conductor formed on the bottom surface of the mold resin so as to connect the chip electronic component and reach the peripheral portion, and on the top surface of the mold resin so as to extend from the concave portion to the peripheral portion. A divided through hole formed as a connection terminal for connecting the formed second wiring conductor and the peripheral portion of the first wiring conductor to the peripheral portion of the second wiring conductor at a predetermined portion. A semiconductor chip attached to the recess on the upper surface of the mold resin and connected by wire bonding to the second wiring conductor; the semiconductor chip and its bonding wire; A hybrid IC including a sealing resin in which a core is buried and sealed, and an insulating layer provided on a top surface and a bottom surface.
【請求項2】 前記絶縁層の上に金属シールド層が設け
られた請求項1記載のハイブリッドIC。
2. The hybrid IC according to claim 1, wherein a metal shield layer is provided on the insulating layer.
【請求項3】 片面に接着剤が塗布された部品仮固定用
フィルムを、該接着面を上にしてフィルム固定用治具に
載置装着する工程と、 前記部品仮固定用フィルムの接着面の所定の位置に複数
のチップ電子部品を配置して接着仮固定する工程と、 前記複数のチップ電子部品が接着仮固定された部品仮固
定用フィルムから前記フィルム固定用治具を取り外す工
程と、 前記部品仮固定用フィルムに複数のチップ子部品が接着
仮固定された側を下にして、該複数のチップ電子部品が
収容される容積の凹部と該凹部の中央部分に凸状部を有
する下型と、平板状の上型とからなる成形型に嵌め込み
樹脂により射出成形する工程と、 前記成形型から取り出され複数のチップ電子部品が樹脂
成形された状態から前記部品仮固定用フィルムを取り外
す工程と、 前記部品仮固定用フィルムを取り外すことにより前記複
数のチップ電子部品の電極が露出された底面と、前記下
型の凸部によって形成された凹部を有する上面に所定の
配線導体を形成するとともに、周辺部に該両面の配線導
体の所定の部分を接続するスルーホール導体を形成する
工程と、 前記凹部に半導体チップを取り付ける工程と、 該半導体チップを樹脂封止する工程と、 上面と下面に絶縁層を形成する工程と、 前記スルーホールの中心軸を通る線で切断する工程とか
ら構成されたハイブリッドICの製造方法。
3. A step of placing and mounting a component temporary fixing film, one side of which is coated with an adhesive, on a film fixing jig with the adhesive surface facing upward, A step of disposing a plurality of chip electronic components at a predetermined position and temporarily adhering them, and a step of removing the film fixing jig from a component provisional fixing film in which the plurality of chip electronic components are adhering and temporarily fixed, A lower mold having a concave portion having a volume for accommodating the plurality of chip electronic components and a convex portion in the central portion of the concave portion, with the side on which the plurality of chip child components are temporarily fixed to the component temporary fixing film being bonded downward. And a step of injection-molding with a resin, which is fitted into a molding die composed of a flat upper die, and a step of removing the component temporary fixing film from a state in which a plurality of chip electronic components taken out from the molding die are resin-molded. , While forming a predetermined wiring conductor on the bottom surface where the electrodes of the plurality of chip electronic components are exposed by removing the component temporary fixing film and on the top surface having the concave portion formed by the lower die convex portion, A through hole conductor for connecting predetermined portions of the wiring conductors on both sides to a portion, a step of attaching a semiconductor chip to the recess, a step of resin-sealing the semiconductor chip, and an insulating layer on the upper and lower surfaces. And a step of cutting with a line passing through the central axis of the through hole.
【請求項4】 前記絶縁層の上から金属シールド層を形
成する工程を設けたことを特徴とする請求項3記載のハ
イブリッドICの製造方法。
4. The method of manufacturing a hybrid IC according to claim 3, further comprising a step of forming a metal shield layer on the insulating layer.
JP22737494A 1994-08-30 1994-08-30 Hybrid IC and manufacturing method thereof Expired - Fee Related JP3447385B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22737494A JP3447385B2 (en) 1994-08-30 1994-08-30 Hybrid IC and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22737494A JP3447385B2 (en) 1994-08-30 1994-08-30 Hybrid IC and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH0870094A true JPH0870094A (en) 1996-03-12
JP3447385B2 JP3447385B2 (en) 2003-09-16

Family

ID=16859811

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22737494A Expired - Fee Related JP3447385B2 (en) 1994-08-30 1994-08-30 Hybrid IC and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP3447385B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110278741A1 (en) * 2010-05-14 2011-11-17 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Interconnect Structure and Mounting Semiconductor Die in Recessed Encapsulant
US8890294B2 (en) 2012-06-07 2014-11-18 Samsung Electronics Co., Ltd. Stack semiconductor package and manufacturing the same
CN107527876A (en) * 2016-06-16 2017-12-29 思鹭科技股份有限公司 Packaging structure

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110278741A1 (en) * 2010-05-14 2011-11-17 Stats Chippac, Ltd. Semiconductor Device and Method of Forming Interconnect Structure and Mounting Semiconductor Die in Recessed Encapsulant
US8558392B2 (en) * 2010-05-14 2013-10-15 Stats Chippac, Ltd. Semiconductor device and method of forming interconnect structure and mounting semiconductor die in recessed encapsulant
US8823182B2 (en) 2010-05-14 2014-09-02 Stats Chippac, Ltd. Semiconductor device and method of forming interconnect structure and mounting semiconductor die in recessed encapsulant
US9530738B2 (en) 2010-05-14 2016-12-27 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming interconnect structure and mounting semiconductor die in recessed encapsulant
US8890294B2 (en) 2012-06-07 2014-11-18 Samsung Electronics Co., Ltd. Stack semiconductor package and manufacturing the same
US9099460B2 (en) 2012-06-07 2015-08-04 Samsung Electronics Co., Ltd. Stack semiconductor package and manufacturing the same
CN107527876A (en) * 2016-06-16 2017-12-29 思鹭科技股份有限公司 Packaging structure

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